JPH05226515A - Aluminum nitride substrate having metallized layer and the metallizing method thereof - Google Patents
Aluminum nitride substrate having metallized layer and the metallizing method thereofInfo
- Publication number
- JPH05226515A JPH05226515A JP4028194A JP2819492A JPH05226515A JP H05226515 A JPH05226515 A JP H05226515A JP 4028194 A JP4028194 A JP 4028194A JP 2819492 A JP2819492 A JP 2819492A JP H05226515 A JPH05226515 A JP H05226515A
- Authority
- JP
- Japan
- Prior art keywords
- metallized layer
- aluminum nitride
- titanium hydride
- alloy
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Ceramic Products (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、メタライズ層を有する
窒化アルミニウム基板及びそのメタライズ方法に関し、
特に、信頼性が高く、実用的な接着強度を備え、かつ、
導電性に優れたメタライズ層を有する高熱伝導性窒化ア
ルミニウム基板とそのメタライズ方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an aluminum nitride substrate having a metallized layer and a method for metallizing the same.
In particular, it has high reliability, practical adhesive strength, and
The present invention relates to a highly heat conductive aluminum nitride substrate having a metallized layer having excellent conductivity and a metallizing method thereof.
【０００２】[0002]
【従来の技術】窒化アルミニウム（以下、ＡｌＮと記
す）焼結体は熱伝導率が高く電気絶縁性に優れ熱膨張係
数がＳｉに近いという特徴を有することから、パワー半
導体搭載用の放熱板を兼ねた絶縁板への適用が期待され
ている。従来のパワー半導体では、Ａｇ−Ｃｕ合金，Ｆ
ｅ，Ａｌ系の放熱板と半導体チップとの間にＡｌ2 Ｏ3
の絶縁板がおかれ、それらの接着には放熱特性をよくす
るためにはんだ付けまたはろう付けが一般的に用いられ
てきた。この絶縁板をＡｌ2 Ｏ3 からＡｌＮに置換する
ことにより低熱抵抗化による放熱特性の向上がなされ
る。そのためにはＡｌＮがはんだ付けまたはろう付け可
能でなければならず、ＡｌＮ表面をメタライズする技術
が必須となる。2. Description of the Related Art Aluminum nitride (hereinafter referred to as "AlN") sintered bodies are characterized by high thermal conductivity, excellent electrical insulation properties, and a coefficient of thermal expansion close to that of Si. It is expected to be applied to an insulating plate that also serves as a doublet. In conventional power semiconductors, Ag-Cu alloy, F
e, Al 2 O 3 between the Al-based heat sink and the semiconductor chip
Insulation plates have been placed and soldering or brazing has been commonly used for their adhesion to improve heat dissipation properties. By replacing this insulating plate with Al 2 O 3 by AlN, the heat dissipation characteristics are improved by lowering the thermal resistance. For that purpose, AlN must be solderable or brazable, and a technique for metallizing the AlN surface is essential.
【０００３】ＡｌＮ焼結体のメタライズ方法としては、
Ｗ，Ｍｏ等の高融点金属をペースト状にしたものをＡｌ
Ｎの表面に塗布し、１０００〜１６００℃程度の湿潤窒
素と水素との混合雰囲気中で焼結させる方法が試みられ
ている。この方法は一般にテレフンケン法として知ら
れ、従来、Ａｌ2 Ｏ3 中の粒界相成分であるＳｉＯ2 に
よって促進される酸化物の液相反応を利用することによ
り、メタライズ層を形成する技術として利用されてき
た。しかし、ＡｌＮはガラスとの濡れが悪く、ＳｉＯ2
等の不純物が含まれていないため液相反応も起こりにく
く、十分な接着強度が得られない。また、Ｗ，Ｍｏ等の
高融点金属ペースト中への添加物とＡｌＮ焼結体中に粒
界相成分としてわずかに存在するＹＡＧの拡散反応を利
用した方法も試みられている。しかし、この方法で十分
な接着強度を得るためには１７００℃以上の高い焼結温
度を必要とし、かつ、ＡｌＮ焼結基板の変形が発生する
という問題があった。さらに、Ｗ，Ｍｏ等の高融点金属
は、電気抵抗が比較的大きいため、放熱特性が悪化する
という問題があった。As a method of metallizing an AlN sintered body,
A high-melting-point metal such as W or Mo in the form of paste is Al
A method of applying it to the surface of N and sintering it in a mixed atmosphere of wet nitrogen and hydrogen at about 1000 to 1600 ° C. has been attempted. This method is generally known as the Telefunken method, and is conventionally used as a technique for forming a metallized layer by utilizing a liquid phase reaction of an oxide promoted by SiO 2 which is a grain boundary phase component in Al 2 O 3. It has been. However, AlN has poor wettability with glass, and SiO 2
Since such impurities are not contained, liquid phase reaction is unlikely to occur and sufficient adhesive strength cannot be obtained. In addition, a method utilizing a diffusion reaction of additives such as W and Mo in a high-melting-point metal paste and YAG which slightly exists as a grain boundary phase component in an AlN sintered body has been attempted. However, this method has a problem that a high sintering temperature of 1700 ° C. or higher is required to obtain sufficient adhesive strength, and the AlN sintered substrate is deformed. Further, refractory metals such as W and Mo have a relatively large electric resistance, so that there is a problem that the heat dissipation characteristics are deteriorated.
【０００４】[0004]
【発明が解決しようとする課題】本発明は前記課題を解
決し、信頼性が高く、実用的な接着強度を備え、かつ、
導電性に優れたメタライズ層を有する高熱伝導性窒化ア
ルミニウム基板と、その製造方法を提供することを目的
とする。SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems, has high reliability and practical adhesive strength, and
An object of the present invention is to provide a high thermal conductive aluminum nitride substrate having a metallized layer having excellent conductivity, and a method for manufacturing the same.
【０００５】[0005]
【課題を解決するための手段】本発明は前記課題を解決
するために、Ａｇ−Ｃｕ合金を主成分とし副成分として
水素化チタンを含有するペーストを、窒化アルミニウム
焼結体基板に塗布した後に焼成することにより窒化アル
ミニウム焼結体にメタライズ層を形成したものである。
ペーストの塗布にはスクリーン印刷を使用することがで
き、焼成して１０〜５０μｍの厚さに導電性の膜を形成
するのが適当である。また、上記のペーストに用いられ
るＡｇ−Ｃｕ合金及び水素化チタンの粒径は１μｍ以上
５０μｍ以下とし、水素化チタンを１重量％以上５０重
量％以下含有させると好適である。焼成はＡｇ−Ｃｕ合
金及び水素化チタンの分解・酸化を防ぐために、非酸化
性雰囲気中又は不活性雰囲気中又は真空雰囲気中で８０
０〜１１００℃に加熱することにより行う。焼成に先立
って、ペースト中に含まれる有機物を除去するために非
酸化性雰囲気中又は不活性雰囲気中での脱脂処理を行っ
てもよい。In order to solve the above-mentioned problems, the present invention applies a paste containing Ag-Cu alloy as a main component and titanium hydride as a sub-component to an aluminum nitride sintered body substrate. A metallized layer is formed on the aluminum nitride sintered body by firing.
Screen printing can be used to apply the paste, and it is suitable to form a conductive film by baking to a thickness of 10 to 50 μm. Further, it is preferable that the Ag—Cu alloy and titanium hydride used in the above-mentioned paste have a particle size of 1 μm or more and 50 μm or less, and contain titanium hydride in an amount of 1% by weight or more and 50% by weight or less. Firing is performed in a non-oxidizing atmosphere, an inert atmosphere, or a vacuum atmosphere to prevent decomposition and oxidation of the Ag-Cu alloy and titanium hydride.
It is performed by heating at 0 to 1100 ° C. Prior to firing, a degreasing treatment may be carried out in a non-oxidizing atmosphere or an inert atmosphere in order to remove organic substances contained in the paste.
【０００６】さらに必要であれば、無電解メッキなどに
よりＮｉ，Ａｇ−Ｃｕ合金，Ａｕ，Ｐｔなどの金属皮膜
を上記の方法で形成されたメタライズ層上に形成する。If necessary, a metal film of Ni, Ag—Cu alloy, Au, Pt, etc. is formed on the metallized layer formed by the above method by electroless plating or the like.
【０００７】[0007]
【作用】本発明ではペースト中に水素化チタンを添加し
ているが、これはチタンを添加する場合、金属チタンよ
り水素化チタンの方が安定なためである。特に微粉化し
た場合、ＴｉＨ2 は約７００℃まで分解・酸化せずに存
在することを実験的に確認している。In the present invention, titanium hydride is added to the paste because titanium hydride is more stable than metallic titanium when titanium is added. It has been experimentally confirmed that TiH 2 exists up to about 700 ° C. without being decomposed and oxidized particularly when it is pulverized.
【０００８】本発明によれば、Ａｇ−Ｃｕ合金を活性金
属の拡散及び反応によってＡｌＮ焼結体に焼き付けるこ
とによってメタライズ層を形成するため、従来のような
酸化物による液相反応や粒界相成分の拡散反応を利用せ
ずにメタライズ層を形成することが可能となり、実用上
十分な接着強度を有するメタライズ層をＡｌＮ焼結基板
上に形成することができる。According to the present invention, since the metallized layer is formed by baking the Ag—Cu alloy on the AlN sintered body by the diffusion and reaction of the active metal, the liquid phase reaction by the oxide and the grain boundary phase as in the prior art. The metallized layer can be formed without utilizing the component diffusion reaction, and the metallized layer having practically sufficient adhesive strength can be formed on the AlN sintered substrate.
【０００９】また、Ａｇ−Ｃｕ合金を主成分とすること
により、従来のＷ，Ｍｏ等の高融点金属を用いたメタラ
イズ方法よりも低い８００〜１０００℃程度の温度範囲
で焼結させることができるので、より低温で信頼性が高
く実用的な接着強度を備えたメタライズ層を有する窒化
アルミニウム基板を製造することができる。また、低温
でメタライズ層を形成するため、従来のメタライズ方法
のようなＡｌＮ基板の変形が発生しなくなる。さらに、
主成分のＡｇ−Ｃｕ合金は従来用いられていたＷ，Ｍｏ
等と比較して電気抵抗が非常に小さいため、導電性に優
れたメタライズ層を形成することができ放熱特性の向上
が期待できる。Further, by using an Ag-Cu alloy as a main component, it is possible to sinter in a temperature range of about 800 to 1000 ° C., which is lower than the conventional metallizing method using a refractory metal such as W or Mo. Therefore, it is possible to manufacture an aluminum nitride substrate having a metallized layer having high reliability and practical adhesive strength at a lower temperature. Further, since the metallized layer is formed at a low temperature, the deformation of the AlN substrate unlike the conventional metallized method does not occur. further,
The main component of Ag-Cu alloy is W, Mo which has been used conventionally.
Since the electric resistance is very small as compared with the above, it is possible to form a metallized layer having excellent conductivity, and it can be expected that the heat dissipation characteristics are improved.
【００１０】ペースト中に含有される水素化チタンの含
有量は、少量では接着強度が小さく、また、多量ではメ
タライズ層の強度が低下し、なおかつ電気抵抗が大きく
なるので１重量％以上５０重量％以下が好適である。本
発明でペーストに用いられるＡｇ−Ｃｕ合金及び水素化
チタンの粒径は１μｍ以上５０μｍ以下が好適である。
薄いメタライズ層を形成できるよう粒径は細かい方が望
ましいが、１μｍ未満では凝集しやすくペースト化が困
難となるうえ、表面酸化による影響が無視できなくな
り、一方、粒径が５０μｍを越えるとペーストのスクリ
ーン印刷による塗布が困難となる。When the content of titanium hydride contained in the paste is small, the adhesive strength is small, and when the content is large, the strength of the metallized layer is lowered and the electric resistance is increased. The following are preferred: The particle size of the Ag—Cu alloy and titanium hydride used in the paste in the present invention is preferably 1 μm or more and 50 μm or less.
It is desirable that the particle size is small so that a thin metallized layer can be formed, but if it is less than 1 μm, it easily aggregates and it becomes difficult to form a paste, and the effect of surface oxidation cannot be ignored, while if the particle size exceeds 50 μm, the paste Application by screen printing becomes difficult.
【００１１】さらに必要であれば、無電解メッキなどに
よりＮｉ，Ａｇ−Ｃｕ合金，Ａｕ，Ｐｔなどの金属皮膜
を上記の方法で形成されたメタライズ層上に形成するこ
とも可能である。Further, if necessary, a metal film of Ni, Ag—Cu alloy, Au, Pt or the like can be formed on the metallized layer formed by the above method by electroless plating or the like.
【００１２】[0012]
【実施例】以下に実施例を示す。ここでは水素化チタン
としてＴｉＨ2 を用いたが、ＴｉＨ2 は水素化チタンの
不定比化合物をも代表するものである。平均粒径６〜７
μｍ、最大粒径２２μｍ以下のＡｇ−Ｃｕ合金に、平均
粒径１６〜１７μｍ、最大粒径４０μｍ以下の水素化チ
タン（ＴｉＨ2 ）を表１の割合で混合した粉末中に、ア
クリル樹脂、テレピネオールを添加し、３本ロールミル
を用いて十分混練することによりペーストを作成した。EXAMPLES Examples will be shown below. Although TiH 2 is used here as titanium hydride, TiH 2 also represents a non-stoichiometric compound of titanium hydride. Average particle size 6-7
Acrylic resin and terpineol were added to a powder obtained by mixing Ag-Cu alloy having a maximum particle size of 22 μm or less and titanium hydride (TiH 2 ) having an average particle size of 16 to 17 μm and a maximum particle size of 40 μm or less at a ratio of Table 1. Was added and sufficiently kneaded using a three-roll mill to prepare a paste.
【００１３】このペーストをＡｌＮの含有量が９８重量
％であるＡｌＮ焼結体基板に、スクリーン印刷により２
ｍｍ×２ｍｍの大きさのパッドを約２０μｍの厚さで形
成するように印刷した。この試料を乾燥・脱脂した後、
真空雰囲気中で８５０℃で焼成しメタライズ層を形成し
た。このようにして形成されたメタライズ層表面に約２
μｍの膜厚を有するＮｉめっき層を形成した。このめっ
き層上にリードフレームをはんだ付けし、リードフレー
ムを垂直方向に５ｍｍ／ｍｉｎで引っ張ることによりピ
ール強度（引き剥し強度）を測定した。以上のようにし
て測定したピール強度を表１に併せて示す。This paste was screen-printed onto an AlN sintered body substrate containing 98% by weight of AlN.
A pad having a size of mm × 2 mm was printed so as to have a thickness of about 20 μm. After drying and degreasing this sample,
It was fired at 850 ° C. in a vacuum atmosphere to form a metallized layer. About 2 on the surface of the metallized layer thus formed
A Ni plating layer having a film thickness of μm was formed. A lead frame was soldered on the plated layer, and the lead frame was pulled vertically at 5 mm / min to measure the peel strength (peeling strength). The peel strength measured as described above is also shown in Table 1.
【００１４】[0014]
【表１】 [Table 1]
【００１５】本発明によって形成されたメタライズ層
（試料Ｎｏ．２〜７）ではＡｌＮ焼結基板内で破壊が起
こり、接着強度はピール強度として５ｋｇ／２ｍｍ□以
上のものが得られ、実用上十分な強度を有している。一
方、ＴｉＨ2 を含有しないペーストを用いたメタライズ
層（試料Ｎｏ．１）ではＡｌＮ焼結体とメタライズ層と
の接着強度が不足し界面で剥離した。In the metallized layer (Sample Nos. 2 to 7) formed by the present invention, fracture occurred in the AlN sintered substrate, and the adhesive strength was 5 kg / 2 mm □ or more, which is practically sufficient. Has strong strength. On the other hand, in the metallized layer (Sample No. 1) using the paste containing no TiH 2 , the adhesive strength between the AlN sintered body and the metallized layer was insufficient and the metallized layer was peeled off at the interface.
【００１６】[0016]
【発明の効果】本発明によれば、従来のメタライズ層よ
り、電気抵抗が小さいので放熱効果が高く、しかも低温
で形成し得るのでＡｌＮ基板の変形を防止することがで
き、実用上十分な密度強度が得られる。According to the present invention, since the electric resistance is smaller than that of the conventional metallized layer, the heat dissipation effect is high, and since it can be formed at a low temperature, the deformation of the AlN substrate can be prevented, and the density is practically sufficient. Strength is obtained.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｃ０４Ｂ 41/88 Ｑ 7038−4Ｇ 41/90 Ａ 7038−4Ｇ Ｈ０５Ｋ 1/09 Ａ 6921−4Ｅ 3/24 Ａ 7511−4Ｅ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI Technical display location C04B 41/88 Q 7038-4G 41/90 A 7038-4G H05K 1/09 A 6921-4E 3 / 24 A 7511-4E
Claims (3)
て水素化チタンを含有するペーストを、窒化アルミニウ
ム焼結体基板に塗布して焼成してなることを特徴とする
メタライズ層を有する窒化アルミニウム基板。1. An aluminum nitride having a metallized layer, which is obtained by applying a paste containing an Ag—Cu alloy as a main component and titanium hydride as a subcomponent to an aluminum nitride sintered body substrate and firing the paste. substrate.
て水素化チタンを含有するペーストを、窒化アルミニウ
ム焼結体基板に塗布して焼成することを特徴とするメタ
ライズ層を有する窒化アルミニウム基板のメタライズ方
法。2. An aluminum nitride substrate having a metallized layer, characterized in that a paste containing an Ag—Cu alloy as a main component and titanium hydride as a subcomponent is applied to an aluminum nitride sintered body substrate and baked. Metallization method.
を形成することを特徴とする請求項２記載のメタライズ
層を有する窒化アルミニウム基板のメタライズ方法。3. The method for metallizing an aluminum nitride substrate having a metallized layer according to claim 2, further comprising forming a metal film on the metallized layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4028194A JPH05226515A (en) | 1992-02-14 | 1992-02-14 | Aluminum nitride substrate having metallized layer and the metallizing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4028194A JPH05226515A (en) | 1992-02-14 | 1992-02-14 | Aluminum nitride substrate having metallized layer and the metallizing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05226515A true JPH05226515A (en) | 1993-09-03 |
Family
ID=12241873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4028194A Withdrawn JPH05226515A (en) | 1992-02-14 | 1992-02-14 | Aluminum nitride substrate having metallized layer and the metallizing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05226515A (en) |
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-
1992
- 1992-02-14 JP JP4028194A patent/JPH05226515A/en not_active Withdrawn
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| JP2017069189A (en) * | 2015-09-29 | 2017-04-06 | 三ツ星ベルト株式会社 | Conductive paste and electronic substrate, manufacturing method therefor |
| WO2018122971A1 (en) | 2016-12-27 | 2018-07-05 | 三ツ星ベルト株式会社 | Electroconductive paste, electronic substrate, and method for manufacturing said substrate |
| KR20180115321A (en) | 2016-12-27 | 2018-10-22 | 미쓰보 시베루토 가부시키 가이샤 | Conductive paste and electronic substrate and manufacturing method thereof |
| EP3422367A4 (en) * | 2016-12-27 | 2019-10-16 | Mitsuboshi Belting Ltd. | Electroconductive paste, electronic substrate, and method for manufacturing said substrate |
| US10575412B2 (en) | 2016-12-27 | 2020-02-25 | Mitsuboshi Belting Ltd. | Electroconductive paste, electronic substrate, and method for manufacturing said substrate |
| CN110642644A (en) * | 2019-09-17 | 2020-01-03 | 昆山市柳鑫电子有限公司 | Aluminum nitride ceramic copper-clad plate and preparation method thereof |
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