JPH05156303A - Metallizing metal powder composition and production of metallized substrate using the composition - Google Patents
Metallizing metal powder composition and production of metallized substrate using the compositionInfo
- Publication number
- JPH05156303A JPH05156303A JP3318070A JP31807091A JPH05156303A JP H05156303 A JPH05156303 A JP H05156303A JP 3318070 A JP3318070 A JP 3318070A JP 31807091 A JP31807091 A JP 31807091A JP H05156303 A JPH05156303 A JP H05156303A
- Authority
- JP
- Japan
- Prior art keywords
- metal powder
- composition
- powder composition
- substrate
- metallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000002184 metal Substances 0.000 title claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 239000000203 mixture Substances 0.000 title claims abstract description 37
- 239000000843 powder Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000919 ceramic Substances 0.000 claims abstract description 30
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 239000011888 foil Substances 0.000 claims abstract description 12
- 239000012298 atmosphere Substances 0.000 claims abstract description 9
- 239000011261 inert gas Substances 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 6
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 150000004678 hydrides Chemical class 0.000 claims abstract description 3
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 9
- 238000001465 metallisation Methods 0.000 claims description 8
- 238000010304 firing Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000011104 metalized film Substances 0.000 abstract description 7
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Laminated Bodies (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は，厚膜電子回路の導体層
形成およびセラミックス基板上に実装された電子機器用
素子，部品等が動作することによって発生する熱を拡散
するための銅回路を形成するためのメタライズ用金属粉
末組成物及びメタライズセラミックス基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a copper circuit for forming a conductor layer of a thick film electronic circuit and for diffusing heat generated by the operation of electronic device elements and parts mounted on a ceramic substrate. The present invention relates to a metallized metal powder composition for forming and a metallized ceramics substrate.
【０００２】[0002]
【従来の技術】電子回路基板には，高絶縁性，機械的強
度，他の電子素子を劣化させないこと，金属導体と容易
に接合体となること，熱伝導率が大きいなどの性質が要
求されている。この基板としてはアルミナ，窒化物セラ
ミックスがある。しかし，セラミックス単体では，電子
機器に用いられるトランジスタ，ダイオード，ＩＣ，Ｌ
ＳＩ，その他各種の電子部品を直接実装することができ
ない。そのため，セラミックス表面に金属化膜を形成
し，導体あるいは金属とを接合することにより電子回路
を製造している。このセラミックス表面への金属化膜を
形成する方法として，高融点金属法，活性金属法，厚膜
法，同時焼成法などが知られている。2. Description of the Related Art Electronic circuit boards are required to have properties such as high insulation, mechanical strength, non-degradation of other electronic elements, easy joining with metal conductors, and high thermal conductivity. ing. Alumina and nitride ceramics are used as this substrate. However, with ceramics alone, transistors, diodes, ICs, L
SI and other various electronic components cannot be directly mounted. Therefore, an electronic circuit is manufactured by forming a metallized film on the surface of ceramics and joining a conductor or a metal. As a method of forming a metallized film on the surface of the ceramics, a high melting point metal method, an active metal method, a thick film method, a co-firing method and the like are known.
【０００３】[0003]
【発明が解決しようとする課題】従来はセラミックス基
板上へ導体ペースト（ガラスフリット入り）を１０〜３
０μｍ程度の厚みにスクリーン印刷し，乾燥した後に，
窒素雰囲気において焼成を行い回路形成を行う方法を用
いている。しかしながら上記の方法によるセラミックス
への金属化膜はセラミックスと金属化膜との接着強度は
２mm□パッドの垂直引っ張り試験で２kg程度で有り，１
５０℃の高温エージング試験を行うと，１００時間後で
接合強度は初期の値に比べて半分以下程度に低下する。
特に窒化物セラミックス用の導体ペーストは現在，接合
強度信頼性の高いものが得られていない。Conventionally, a conductor paste (containing glass frit) of 10 to 3 is formed on a ceramic substrate.
After screen printing to a thickness of about 0 μm and drying,
A method is used in which a circuit is formed by firing in a nitrogen atmosphere. However, in the metallized film on ceramics by the above method, the adhesive strength between ceramics and metallized film is 2mm □ The vertical tensile test of the pad is about 2kg.
When a high temperature aging test at 50 ° C. is performed, the bonding strength after 100 hours is reduced to less than half the initial value.
In particular, as for the conductor paste for nitride ceramics, one with high reliability of bonding strength has not been obtained at present.
【０００４】そこで，本発明の技術的課題は，上記の不
安定な導体ペースト改善するために，良導体で有るＣ
ｕ，Ａｇ，Ａｕを少なくとも１種類を主成分とする接合
強度の高い，かつ導体抵抗の低い，環境試験において信
頼性の高い金属化膜が得られるメタライズ用金属粉末組
成物及びメタライズ基板を提供することにある。Therefore, the technical problem of the present invention is to improve the unstable conductor paste by using C which is a good conductor.
Provided are a metallized metal powder composition and a metallized substrate containing at least one of u, Ag, and Au as a main component, which has a high bonding strength, a low conductor resistance, and a highly reliable metallized film in an environmental test. Especially.
【０００５】[0005]
【課題を解決するための手段】本発明によれば，セラミ
ックス基板をメタライズするための金属粉末組成物にお
いて，Ｃｕ，Ａｇ，Ａｕの良導体のうち少なくとも一種
からなる主成分と，Ｔｉ，Ｚｒのうちの少なくとも一種
の水素化物，酸化物及び炭化物のうちの少なくとも一種
からなる副成分とを含むことを特徴とするメタライズ用
金属粉末組成物が得られる。According to the present invention, in a metal powder composition for metallizing a ceramic substrate, a main component of at least one of good conductors of Cu, Ag and Au and Ti and Zr A metal powder composition for metallization, characterized in that it contains at least one hydride, an oxide and a sub-component consisting of at least one of carbides.
【０００６】本発明によれば，前記金属粉末組成物にお
いて，前記主成分が７０〜９９．５重量％，前記副成分
が０．５〜３０重量％含まれていることを特徴とするメ
タライズ用金属粉末組成物が得られる。According to the present invention, the metal powder composition contains 70 to 99.5% by weight of the main component and 0.5 to 30% by weight of the subcomponent, for metallization. A metal powder composition is obtained.
【０００７】本発明によれば，セラミックス基板の表面
の一部に請求項１又は２記載の金属粉末組成物を有する
ことを特徴とするメタライズ基板が得られる。According to the present invention, there is obtained a metallized substrate characterized in that the metal powder composition according to claim 1 or 2 is provided on a part of the surface of the ceramic substrate.
【０００８】本発明によれば，セラミックス基板表面の
一部に前記したいずれかの金属粉末組成物を塗布し，真
空又は不活性ガス雰囲気中で焼成することを特徴とする
メタライズ基板の製造方法が得られる。According to the present invention, there is provided a method for producing a metallized substrate, which comprises coating one of the above-mentioned metal powder compositions on a part of the surface of a ceramic substrate and firing it in a vacuum or an inert gas atmosphere. can get.
【０００９】本発明によれば，セラミックス基板と，金
属箔と，前記セラミックス基板の表面と前記金属箔との
間に前記したいずれかの金属粉末組成物を有することを
特徴とする金属箔接合メタライズ基板が得られる。According to the present invention, there is provided a metal foil bonding metallization comprising a ceramic substrate, a metal foil, and any one of the metal powder compositions described above between the surface of the ceramic substrate and the metal foil. A substrate is obtained.
【００１０】本発明によれば，セラミックス基板表面
に，前記したいずれかの金属粉末組成物を塗布して金属
箔を貼り付け，真空又は不活性ガス雰囲気中で焼成する
ことを特徴とする金属箔接合メタライズ基板の製造方法
が得られる。According to the present invention, a metal foil is formed by applying any one of the above-mentioned metal powder compositions onto the surface of a ceramic substrate, pasting a metal foil, and baking in a vacuum or an inert gas atmosphere. A method of manufacturing a bonded metallized substrate is obtained.
【００１１】本発明によって，セラミックスに対して高
い接合強度が得られ，かつ，形成されたメタライズ導体
の導体抵抗が低いメタライズ用金属粉末組成物とこれを
用いたメタライズセラミックス基板が得られるものであ
る。According to the present invention, a metallizing metal powder composition having a high bonding strength with respect to ceramics and having a low conductor resistance of the formed metallized conductor and a metallized ceramics substrate using the same can be obtained. ..
【００１２】ここで，本発明に適用するセラミックス基
板は，窒化物，例えばＡｌＮやＳｉ3 Ｎ4 及び酸化物，
例えばＡｌ2 Ｏ3 など，あるいは数％の焼結助剤を含む
セラミックス焼結体であることが好ましいか，これらに
限定されるものではない。Here, the ceramic substrate applied to the present invention is a nitride such as AlN or Si 3 N 4 and oxide,
For example, a ceramic sintered body containing Al 2 O 3 or the like, or a sintering aid of several% is preferable, but not limited thereto.
【００１３】[0013]
【実施例】本発明の実施例に係るメタライズ組成物は，
次のような材料および方法によって製造される。主成分
であるＣｕ及びＴｉは１０μｍ以下の粒径からなる微粉
末を目標組成になるように秤量混合を行いメタライズ組
成物を得る。メタライズ組成物にビヒクルを添加混合し
て，三本ロールミル等を用いて十分混練し，粒度を５μ
ｍ以下とし，均一に分散させスクリーン印刷に適した粘
度に調整しペースト状とする。バインダーとしてはアク
リル系樹脂など通常用いられているものを適用した。ま
た，熱処理時の不活性ガスとしては純窒素ガス及び純ア
ルゴンガスだけではなく窒素ガスに水素ガスを少量混合
したもの或はアルゴンガスに酸素ガスを少量混合したも
のを用いてもよい。EXAMPLE A metallized composition according to an example of the present invention is
It is manufactured by the following materials and methods. Cu and Ti, which are the main components, are weighed and mixed so that a fine powder having a particle diameter of 10 μm or less has a target composition to obtain a metallized composition. The vehicle is added to the metallized composition and mixed, and thoroughly kneaded using a three-roll mill or the like, and the particle size is 5 μm.
It should be m or less, dispersed uniformly and adjusted to a viscosity suitable for screen printing, and made into a paste. As the binder, a commonly used one such as acrylic resin was applied. Further, as the inert gas at the time of heat treatment, not only pure nitrogen gas and pure argon gas but also nitrogen gas mixed with a small amount of hydrogen gas or argon gas mixed with a small amount of oxygen gas may be used.
【００１４】次に，本発明の実施例に係るメタライズ用
金属粉末組成物を用いたメタライズ基板の作成例を示
す。ＡｌＮ基板上に下記の表１に示した組成のペースト
を作成し，塗布した。これを表１に示す雰囲気でメタラ
イズ焼成を行った。Next, an example of producing a metallized substrate using the metal powder composition for metallization according to the embodiment of the present invention will be described. A paste having the composition shown in Table 1 below was prepared and applied on an AlN substrate. This was subjected to metallization firing in the atmosphere shown in Table 1.
【００１５】このようにして得られたメタライズ層の接
合強度とシート抵抗について測定した。この結果，従来
の導体ペーストに対して接合強度の高い，シート抵抗も
適度な値を示すことがわかった。尚，Ａｌ2 Ｏ3 基板に
ついても同様な効果が得られた。The bonding strength and sheet resistance of the metallized layer thus obtained were measured. As a result, it was found that the sheet resistance, which has a high bonding strength with respect to the conventional conductor paste, exhibits an appropriate value. Similar effects were obtained with the Al 2 O 3 substrate.
【００１６】[0016]
【表１】 [Table 1]
【００１７】次に，本発明の実施例に係るメタライズ用
金属粉末組成物を窒素化合物又は酸化物からなるセラミ
ックス基板に塗布し，Ｃｕ箔を貼り付け高真空雰囲気中
乃至不活性ガス雰囲気中において熱処理を施した。ま
た，金属箔は，セラミックス基板に塗布したペーストと
の接着性が高く，メタライズ用金属粉末組成物の熱処理
温度より融点の高いものとするため，Ｃｕ，Ａｕ，とＡ
ｇ単体の金属を用いた。このようにメタライズ用金属粉
末組成物を使用し，金属箔を接合したために，セラミッ
クス基板に対して高い接合強度が得られた。Next, the metallizing metal powder composition according to the embodiment of the present invention is applied to a ceramic substrate made of a nitrogen compound or an oxide, and a Cu foil is attached thereto, followed by heat treatment in a high vacuum atmosphere or an inert gas atmosphere. Was applied. Further, since the metal foil has high adhesiveness to the paste applied to the ceramic substrate and has a melting point higher than the heat treatment temperature of the metallizing metal powder composition, Cu, Au, and A
A single metal was used. As described above, since the metal powder composition for metallization was used to bond the metal foil, a high bonding strength was obtained with respect to the ceramic substrate.
【００１８】[0018]
【発明の効果】以上説明したように，本発明によれば，
接合強度が高く且つ導体抵抗の低い，環境試験におい
て，信頼性の高い金属化膜が得られるメタライズ用金属
粉末組成物及びメタライズ基板を提供することができ
る。As described above, according to the present invention,
It is possible to provide a metal powder composition for metallization and a metallized substrate which can obtain a highly reliable metallized film in an environmental test having high bonding strength and low conductor resistance.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｂ 1/08 7244−5Ｇ 5/14 Ｚ 7244−5Ｇ 13/00 ５０３ Ｚ 7244−5Ｇ Ｈ０１Ｌ 23/12 Ｈ０５Ｋ 1/09 Ｃ 8727−4Ｅ Ａ 8727−4Ｅ 3/00 Ｒ 6921−4Ｅ 3/38 Ｃ 7011−4Ｅ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical display location H01B 1/08 7244-5G 5/14 Z 7244-5G 13/00 503 Z 7244-5G H01L 23 / 12 H05K 1/09 C 8727-4E A 8727-4E 3/00 R 6921-4E 3/38 C 7011-4E
Claims (6)
の金属粉末組成物において，Ｃｕ，Ａｇ，Ａｕの良導体
のうち少なくとも一種からなる主成分と，Ｔｉ，Ｚｒの
うちの少なくとも一種の水素化物，酸化物及び炭化物の
うちの少なくとも一種からなる副成分とを含むことを特
徴とするメタライズ用金属粉末組成物。1. A metal powder composition for metallizing a ceramic substrate, the main component comprising at least one good conductor of Cu, Ag and Au, and a hydride, oxide and at least one of Ti and Zr. A metal powder composition for metallization, comprising a sub-component comprising at least one kind of carbide.
て，前記主成分が７０〜９９．５重量％，前記副成分が
０．５〜３０重量％含まれていることを特徴とするメタ
ライズ用金属粉末組成物。2. The metal powder composition according to claim 1, wherein the main component is contained in an amount of 70 to 99.5% by weight and the subcomponent is contained in an amount of 0.5 to 30% by weight. Metal powder composition.
１又は２記載の金属粉末組成物を有することを特徴とす
るメタライズ基板。3. A metallized substrate, comprising the metal powder composition according to claim 1 or 2 on a part of the surface of a ceramic substrate.
又は２記載の金属粉末組成物を塗布し，真空又は不活性
ガス雰囲気中で焼成することを特徴とするメタライズ基
板の製造方法。4. The method according to claim 1, wherein a part of the surface of the ceramic substrate is used.
Alternatively, a method for producing a metallized substrate, which comprises coating the metal powder composition according to 2 and firing in a vacuum or an inert gas atmosphere.
ラミックス基板の表面と前記金属箔との間に請求項１又
は２記載の金属粉末組成物を有することを特徴とする金
属箔接合メタライズ基板。5. A metal foil-bonded metallized substrate comprising a ceramic substrate, a metal foil, and the metal powder composition according to claim 1 between the surface of the ceramic substrate and the metal foil.
２記載の金属粉末組成物を塗布して金属箔を貼り付け，
真空又は不活性ガス雰囲気中で焼成することを特徴とす
る金属箔接合メタライズ基板の製造方法。6. The surface of a ceramic substrate is coated with the metal powder composition according to claim 1 or 2 and a metal foil is attached thereto.
A method for producing a metal foil bonded metallized substrate, which comprises firing in a vacuum or an inert gas atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3318070A JPH05156303A (en) | 1991-12-02 | 1991-12-02 | Metallizing metal powder composition and production of metallized substrate using the composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3318070A JPH05156303A (en) | 1991-12-02 | 1991-12-02 | Metallizing metal powder composition and production of metallized substrate using the composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05156303A true JPH05156303A (en) | 1993-06-22 |
Family
ID=18095146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3318070A Withdrawn JPH05156303A (en) | 1991-12-02 | 1991-12-02 | Metallizing metal powder composition and production of metallized substrate using the composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05156303A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006109410A1 (en) * | 2005-04-12 | 2006-10-19 | Asahi Glass Company, Limited | Ink composition and metallic material |
| WO2013115359A1 (en) * | 2012-02-01 | 2013-08-08 | 三菱マテリアル株式会社 | Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, and paste for bonding copper member |
| JP2013177290A (en) * | 2012-02-01 | 2013-09-09 | Mitsubishi Materials Corp | Paste for joining copper member and manufacturing method of joined body |
| JP2014181164A (en) * | 2013-03-21 | 2014-09-29 | Kyoto Elex Kk | Metal paste composition for ceramic material |
| JP2015062230A (en) * | 2010-03-02 | 2015-04-02 | 株式会社トクヤマ | Composition for formation of wiring pattern |
| WO2018122971A1 (en) * | 2016-12-27 | 2018-07-05 | 三ツ星ベルト株式会社 | Electroconductive paste, electronic substrate, and method for manufacturing said substrate |
-
1991
- 1991-12-02 JP JP3318070A patent/JPH05156303A/en not_active Withdrawn
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006109410A1 (en) * | 2005-04-12 | 2006-10-19 | Asahi Glass Company, Limited | Ink composition and metallic material |
| US7956103B2 (en) | 2005-04-12 | 2011-06-07 | Asahi Glass Company, Limited | Ink composition and metallic material |
| JP2015062230A (en) * | 2010-03-02 | 2015-04-02 | 株式会社トクヤマ | Composition for formation of wiring pattern |
| WO2013115359A1 (en) * | 2012-02-01 | 2013-08-08 | 三菱マテリアル株式会社 | Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, and paste for bonding copper member |
| JP2013177290A (en) * | 2012-02-01 | 2013-09-09 | Mitsubishi Materials Corp | Paste for joining copper member and manufacturing method of joined body |
| US9504144B2 (en) | 2012-02-01 | 2016-11-22 | Mitsubishi Materials Corporation | Power module substrate, power module substrate with heat sink, power module, method of manufacturing power module substrate, and copper member-bonding paste |
| US10375825B2 (en) | 2012-02-01 | 2019-08-06 | Mitsubishi Materials Corporation | Power module substrate, power module substrate with heat sink, power module, method of manufacturing power module substrate, and copper member-bonding paste |
| JP2014181164A (en) * | 2013-03-21 | 2014-09-29 | Kyoto Elex Kk | Metal paste composition for ceramic material |
| WO2018122971A1 (en) * | 2016-12-27 | 2018-07-05 | 三ツ星ベルト株式会社 | Electroconductive paste, electronic substrate, and method for manufacturing said substrate |
| EP3422367A4 (en) * | 2016-12-27 | 2019-10-16 | Mitsuboshi Belting Ltd. | Electroconductive paste, electronic substrate, and method for manufacturing said substrate |
| US10575412B2 (en) | 2016-12-27 | 2020-02-25 | Mitsuboshi Belting Ltd. | Electroconductive paste, electronic substrate, and method for manufacturing said substrate |
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