CN102507669A - Structure improvement and making method of humidity sensor on basis of polyimide and filler corrosion - Google Patents
Structure improvement and making method of humidity sensor on basis of polyimide and filler corrosion Download PDFInfo
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- CN102507669A CN102507669A CN2011103690626A CN201110369062A CN102507669A CN 102507669 A CN102507669 A CN 102507669A CN 2011103690626 A CN2011103690626 A CN 2011103690626A CN 201110369062 A CN201110369062 A CN 201110369062A CN 102507669 A CN102507669 A CN 102507669A
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- polyimide
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- lead plate
- electrode plates
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Abstract
The invention relates to a structure improvement and a making method of a humidity sensor on the basis of polyimide and filler corrosion. The structure improvement is characterized in that after filling materials in a polyimide layer between electrode plates, carrying out corrosion and making a porous thin film, and after photoetching, a, a single cavity is made along the direction of the electrode plates; b, a plurality of cavities are made along the direction of the electrode plates; c, a plurality of cavities are made in the direction vertical to the electrode plates; d, a plurality of independent cavities are made in the porous polyimide thin film between the electrode plates; or e, a plurality of independent polyimide blocks are reserved in the porous polyimide thin film between the electrode plates. The making method comprises the following steps of: firstly, sputtering a metal layer serving as a seed layer on a silicon wafer; then electroplating capacitor electrode plates; coating a polyimide adhesive serving as a dielectric material of a capacitor; filling optical fibers, glass powder or metal granular materials in the polyimide; corroding the filling materials in the polyimide to obtain the porous polyimide thin film; and finally, forming the cavities by adopting an photoetching method, so that the contact area of the porous thin film and the air is increased and the sensitivity of the sensor is improved.
Description
Technical field
The present invention relates to a kind of humidity sensor architecture advances and method, belong to sensor field based on polyimide and filling material corrosion.
Background technology
Humidity sensor mainly contains two big types of resistance-type, condenser types.The performance index of humidity sensor mainly contain the measuring accuracy response time etc.
The characteristics of resistance-type humidity sensor are on substrate, to cover the film that one deck is processed with wet sensory material, and when airborne water vapor adsorption was on humidity-sensitive film, the resistivity and the resistance value of element all changed, and utilized this characteristic to get final product humidity measuring.
Capacitance type humidity sensor is generally processed with macromolecule membrane electric capacity, and macromolecular material commonly used has polystyrene, polyimide, butyric acid acetate fiber etc.When ambient humidity changed, the specific inductive capacity of humicap changed, and its electric capacity is also changed, and its capacitance change is directly proportional with relative humidity.
The advantage of capacitance type humidity sensor is that capacitance variations and humidity present the highly linear relation, has occupied about 75% the market share.
In capacitance type sensor; Often use polyimide as thin-film capacitor, this material and ic process compatibility, stable chemical performance; Water permeability is good; Traditional capacitance type humidity sensor generally is made up of two-layer electrode and one deck macromolecular material, and this sensor and surrounding environment contact area are limited, has shortcomings such as response time length.
Yet from capacitance equation, the method that improves the performance of humidity sensor mainly contains two kinds, and a kind of is to improve macromolecular material temperature-sensitive performance, the 2nd, thus, can only improve material the performance of the structure raising humidity sensor of sensor after confirming
The present invention intends from changing traditional humidity sensor construction, has improved the contact area of film and surrounding environment, thereby has reduced the response time.
Summary of the invention
In order to reduce the response time; Improve the performance of humidity sensor structure; The present invention proposes a kind of improvement and method of the humidity sensor structure based on the corrosion of polyimide and filling material; That is the packing material post-etching is made porous membrane in the polyimide layer between battery lead plate, thereby has improved the contact area of film and surrounding environment.
Packing material comprises particulate materials such as optical fiber, glass powder, metal.The view sensor requirement can be demarcated the relation of the sensor index such as loading and response time of particulate material.Usually, fill manyly more, particle is thin more, and the performance of sensor is good more, and correspondingly corroding difficulty can strengthen.
Technical scheme of the present invention is; At first on silicon wafer the splash-proofing sputtering metal layer as Seed Layer; Electroplate out capacitive electrode plates then; Coating polyimide glue is as the dielectric material of electric capacity again, and then in polyimide glue, fills particulate materials such as optical fiber, glass powder or metal, and the packing material in the final etching polyimide obtains porous polyimide film; At last, adopt the method for photoetching, on the different directions of battery lead plate, form single, a plurality of independent cavitys, thereby improve the contact area of thin-film dielectric material and surrounding environment.
This shows; A kind of humidity sensor architecture advances provided by the invention based on polyimide and filling material corrosion; It is characterized in that the packing material post-etching is produced porous membrane in the polyimide layer between battery lead plate, after photoetching, a) make single cavity along the battery lead plate direction; B) make a plurality of cavitys along the battery lead plate direction; C) vertical electrical pole plate direction is made a plurality of cavitys; D) a plurality of independently cavitys in the porous polyimide film between battery lead plate; Or e) keeps a plurality of independently polyimide block in the porous polyimide film between battery lead plate.
Description of drawings
Fig. 1 is the process chart that porous polyimide film provided by the present invention is made, and a) is ready to silicon chip; B) on silicon chip, make SiO
2Layer; C) sputtering seed layer and electroplate out capacitive electrode plates; D) make capacitor dielectric material and packing material; E) solidify and corrode filling material.
Fig. 2 makes a cavity (plan view) along the battery lead plate direction in the porous polyimide film between battery lead plate.
Fig. 3 makes a plurality of cavitys (plan view) along the battery lead plate direction in the porous polyimide film between battery lead plate.
Fig. 4 is that vertical electrical pole plate direction is made a plurality of cavitys (sensor upper surface vertical view) in the porous imide membrane between battery lead plate.
Fig. 5 makes a plurality of independently cavitys (sensor upper surface vertical view) in the porous polyimide film between battery lead plate.
Fig. 6 keeps a plurality of independently polyimide block (sensor upper surface vertical view) in the porous polyimide film between battery lead plate.
Embodiment
For advantage of the present invention and good effect are found full expression, substantive distinguishing features of the present invention and obvious improvement are described further below in conjunction with accompanying drawing and embodiment.
Embodiment 1
In Fig. 1 (a), prepare the positive SiO of making of silicon chip (1)
2Layer (2)
In Fig. 1 (b), at the positive SiO that makes of silicon chip (1)
2Layer (2),
In Fig. 1 (c), go up the sputtering seed layer and electroplate out capacitive electrode plates (3) at silicon chip (1), typical Seed Layer comprises TiW/Cu etc., typical battery lead plate material comprises Au etc.
In Fig. 1 (d), coating polyimide glue (4) is made the capacitor dielectric material, and wherein polyimide glue is filled with glass powder, optical fiber or metal material (5) etc.
In Fig. 1 (e), cure polyimide glue, and corrosion is filled in the filling material in the polyimide, thus obtain porous polyimide film.
Embodiment 2
The method for making of sensor can be as shown in Figure 2, along the battery lead plate direction, adopts the method for photoetching to make a cavity in the porous polyimide film between battery lead plate.
With respect to embodiment 1, this method has further increased the contact area of porous polyimide film and air, has improved the sensitivity of sensor.
The method for making of sensor can be as shown in Figure 3, and the porous polyimide film between battery lead plate along the battery lead plate direction, adopts the method for photoetching to make a plurality of cavitys.3 cavitys shown in the figure, but actual can also can depending on the needs greater than 3 less than 3.
With respect to embodiment 1, this method has further increased the contact area of porous polyimide film and air, has improved the sensitivity of sensor.
Embodiment 4
The method for making of cavity can be as shown in Figure 4, in vertical electrical pole plate direction, adopts the method for photoetching to make a plurality of cavitys in the porous polyimide film between battery lead plate.
With respect to embodiment 1, this method has further increased the contact area of porous polyimide film and air, has improved the sensitivity of sensor.
The method for making of cavity can be as shown in Figure 5, in the porous polyimide film between battery lead plate, adopts the method for photoetching to make a plurality of independently cavitys.
With respect to embodiment 1, this method has further increased the contact area of porous polyimide film and air, has improved the sensitivity of sensor.
Embodiment 6
The method for making of cavity can be as shown in Figure 6, in the porous polyimide film between battery lead plate, adopts the method for photoetching to keep a plurality of independently polyimide block.
With respect to embodiment 1, this method has further increased the contact area of porous polyimide film and air, has improved the sensitivity of sensor.
Form variety classes cavity 5 from above Fig. 2-6 photoetching method; Having the cavity number is not to be confined to diagram; Can decide according to needing; Just the present invention obtains porous polyimide film through filling optical fiber, glass powder or metallic particles material in the polyimide electricity dielectric material through the corrosion packing material.And the purpose that forms cavity is the contact area that has increased porous polyimide film and air, thereby has improved the sensitivity of sensor.
Claims (4)
1. the humidity sensor architecture advances based on polyimide and filling material corrosion is characterized in that the packing material post-etching is produced porous membrane in the polyimide layer between battery lead plate, after photoetching
A) make single cavity along the battery lead plate direction;
B) make a plurality of cavitys along the battery lead plate direction;
C) vertical electrical pole plate direction is made a plurality of cavitys;
D) a plurality of independently cavitys in the porous polyimide film between battery lead plate; Or
E) keep a plurality of independently polyimide block in the porous polyimide film between battery lead plate.
2. by the described improvement of claim 1, it is characterized in that described packing material comprises optical fiber, glass powder or metallic particles material.
3. make the improved method of structure sensor as claimed in claim 1; It is characterized in that at first the splash-proofing sputtering metal layer is as Seed Layer on silicon wafer; Electroplate out capacitive electrode plates then; Coating polyimide glue is as the dielectric material of electric capacity again, and in polyimide, fills optical fiber, glass powder or metallic particles material, and the packing material in the final etching polyimide obtains porous polyimide film; At last, adopt the method for photoetching, between the battery lead plate, make single cavity, a plurality of cavity or reservation porous polyimide piece between the vertical electroplax or along the battery lead plate direction.
4. by the described method of claim 3, it is characterized in that described Seed Layer is TiW/Cu, capacitive electrode plates is Au.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011103690626A CN102507669A (en) | 2011-11-18 | 2011-11-18 | Structure improvement and making method of humidity sensor on basis of polyimide and filler corrosion |
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| CN2011103690626A CN102507669A (en) | 2011-11-18 | 2011-11-18 | Structure improvement and making method of humidity sensor on basis of polyimide and filler corrosion |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102590291A (en) * | 2012-01-16 | 2012-07-18 | 中国科学院上海微系统与信息技术研究所 | Method for manufacturing improved humidity sensor |
| CN109576655A (en) * | 2018-12-29 | 2019-04-05 | 广东爱晟电子科技有限公司 | A kind of highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision |
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| JP3047137B2 (en) * | 1991-09-06 | 2000-05-29 | グローリー工業株式会社 | Manufacturing method of humidity sensor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102590291A (en) * | 2012-01-16 | 2012-07-18 | 中国科学院上海微系统与信息技术研究所 | Method for manufacturing improved humidity sensor |
| CN102590291B (en) * | 2012-01-16 | 2014-03-12 | 中国科学院上海微系统与信息技术研究所 | Method for manufacturing improved humidity sensor |
| CN109576655A (en) * | 2018-12-29 | 2019-04-05 | 广东爱晟电子科技有限公司 | A kind of highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision |
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Application publication date: 20120620 |