CN102950350A - Process for welding electronic microcomponents based on multi-temperature gradient - Google Patents

Process for welding electronic microcomponents based on multi-temperature gradient Download PDF

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Publication number
CN102950350A
CN102950350A CN2012103762756A CN201210376275A CN102950350A CN 102950350 A CN102950350 A CN 102950350A CN 2012103762756 A CN2012103762756 A CN 2012103762756A CN 201210376275 A CN201210376275 A CN 201210376275A CN 102950350 A CN102950350 A CN 102950350A
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welding
solder
micromodule
temperature step
electronics
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詹为宇
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CETC 10 Research Institute
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CETC 10 Research Institute
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Abstract

The invention discloses a process for welding electronic microcomponents based on a multi-temperature gradient. The process is simple, convenient, efficient, stable and reliable in processing quality, good in welding flowability and little in welding hollows. The process is realized by the following technical scheme: designing the temperature gradient of welding fluxes according to melting points of different welding fluxes and respectively manufacturing welding flux slices at different temperature gradients from a secondary high temperature to a minimum temperature; dividing a function substrate and a transition parent plate on each electronic microcomponent into welding surfaces of the welding fluxes at different temperature gradients and coating a welding flux film coating layer on the welding surfaces directly and respectively by sputter coating; arranging welding flux thickness control pins at more points on the welding surfaces of the electronic component; laminating the electronic microcomponents (1), the welding flux slices (3) and the substrate component (5) sequentially, putting into a clamp with a counter-recoil pressure holding mechanism and putting the clamp into a furnace for vacuum welding; firstly completing the welding at a high temperature gradient, and then protecting other surfaces, which are not used for the welding at the next temperature gradient, of the substrate component, and coating one welding flux film coating layer on the welding surfaces respectively by the sputter coating at the next temperature gradient.

Description

The process of many temperature step welding electronics micromodule
Technical field
The present invention relates to a kind of process of many temperature step welding electronics micromodule, especially need high-precision temperature control welding electronics micromodule to be integrated into little assembling technique of electronic building brick.
Background technology
In little assembling process of multifunction electric sub-component, welding relates to reliability and the quality of product, directly has influence on electrical performance indexes and the examination of Product environment adaptability examination of product.In addition, because electronic building brick is fast-developing towards light, thin, little direction, a series of welding procedure difficult problems have been proposed, for this reason, complete machine electronics manufacturing firm around electronic building brick particularly TR components welding technique launched keen competition, be intended to further improve welding quality, overcome the defectives such as the welding voidage variation that exists in the welding, rosin joint.At present, the little process for assembling and welding of the most widely used electronics TR assembly mainly is as solderable coating at the electronics micromodule first electrogilding in surface of needs welding or electrosilvering, then at coating surface clamping soft solder, the stove of putting into appointment together with anchor clamps carries out soldering, and welding the most frequently used scolder is the eutectic tin metal: tin 63%; Plumbous 37%, conventional Welding Process Design is to be higher than alloy liquid temperature more than 183 ℃ 30 ℃~40 ℃, keep a period of time after cooling take out.Common process components welding face is commonly used gold, silver coating, and the impregnation process of a liquid-solid interface atom diffusion is arranged during welding and between fusion welding, and solder component and temperature minor variations can affect diffusion, and defective easily occurs; Do not adopt many fusing points scolder if do not use the eutectic tin metal welding of single melting temperature, other fusing point scolder at the wetting capacity of gold-plated or silver-plated surface along with the variation of temperature is widely different, the voidage of various different melting points scolder welding is only by Comprehensive Control such as gold and silver coating surface, solder surface, scaling powder, anchor clamps, governing factor is many, complicated operation, welding final result randomness is large, can not satisfy the high reliability request that product constantly promotes.
Along with electronic product of new generation towards microminiaturization, lightness, multi-functional, high integrated, highly reliable future development, thereby need to realize multichannel at the micromodule of integrated a plurality of difference in functionalitys on five even six installed surfaces and input/output interface in TR assembly, multi-functional function is used needs.Because product will satisfy function and environmental suitability requirement, to consider from the design synthesis such as heat radiation of installation strength, micromodule heat transfer and TR assembly, welding procedure is preferred version.Product also will bear high vibration level in using, and the test of long-term temperature alternating circulation is had higher requirement to solder technology.The product lightweight means to exist in a large number thermal coefficient of expansion to differ larger alloy in lightweight material welding combination in the TR assembly that there is the risk of fatigue damage in solder side.Our result of study shows: the employing eutectic solder can be realized the reliability welding between the differential thermal expansion coefficient material, can effectively alleviate the postwelding residual stress, and can satisfy the instructions for use of electronics TR assembly.
Along with miniaturization, multifunction, light-weightedly require increasingly, a large amount of electronics micromodule welding assembly technology that adopt of beginning replace screw fastenings to assemble technology in assembling electronics TR component process, solve assembly radiating and are connected with miniaturization.The matter of utmost importance that runs in the traditional welding is the weld failure problem.The weld failure reason mainly contains: solder side solderable coating aliquation; Solderable coating is electroplated and is polluted difficult quantitatively detection, flux cleaning weak effect; Lightweight ripple metal material alive galvanization coating is unstable, has limited application; Scolder and micromodule coating are difficult to component and atom diffusion coupling, solderable coating difficult processing, poor stability; The 30 ℃ of atom diffusions on fusing point of a lot of scolders and gold and silver coating surface are slow, and voidage is high; At six face welding electronics micromodules of assembly, solder thickness is regulated difficult control near chucking power, and stress cracking etc. easily occurs the coefficient of thermal expansion mismatch components welding.Modern military is equipped in the requirement of environmental suitability vibration level and is increasing progressively of the order of magnitude, can not go beyond the check difficult problem of a lot of electronic devices and components forbiddings for the quantitative flaw detection of solder side.The welding temperature step is greater than 30 ℃, and available scolder kind sharply reduces, and has limited the assembling Integrated design flexibility ratio of micromodule.The welding procedure of high-precision temperature control, high uniformity and stability has become the restriction military equipment to the bottleneck of miniaturization, multifunction, lightweight future development.
Summary of the invention
The objective of the invention is the problem for above-mentioned prior art existence, provide a kind of simple and convenient, efficiently, crudy is reliable and stable, the welding good fluidity, the process of many temperature step welding electronics micromodule that the welding cavity is few, few to solve present electronics TR components welding temperature step, multi-functional integrated degree is low, and light material is limited because of thermal expansion mismatch, the welding index is stable, uniformity is poor, quantitatively the problem of carrying out flaw detection difficulty.
Above-mentioned purpose of the present invention can reach by following measures: a kind of process of many temperature step welding electronics micromodule comprises the steps:
1) can reach 25 ℃ ± 5 ℃ temperature step according to different scolder fusing points poor, design solder temperature step is made respectively from inferior high-temperature section to minimum temperature section different temperatures step scolder thin slice and the solder plating film layer of the corresponding melting temperature of solder side;
2) make the solder side of base assembly, assembly cavity 11 or electromagnetic shielding dividing plate 10 with lightweight amphoteric metal alloy material; The solder side that function substrate on the electronics micromodule and transition motherboard is divided into different temperatures step scolder, solder side directly adopt sputter coating to apply one deck solder plating film layer; At the solder thickness control pin of 3 of electronic building brick solder side layings or above more multiple spot polygon layout, and solder thickness=solder thickness is controlled the pin design thickness after the welding;
3) press electronics micromodule (1), scolder thin slice (3), base assembly (5) order lamination, scolder thin slice and solder side film plating layer material are close to, the anchor clamps of putting into multiple entrance pressure force retaining mechanism advance the stove vacuum welding, pass in case of necessity formic acid gas as reducing atmosphere;
4) at first finish the welding of high temperature step, form a primary electron micromodule, protect again next obsolete other surface of temperature step welding of its base assembly, apply the solder plating film layer (2) of the next temperature step of one deck at the solder side sputter coating, by above-mentioned steps 3) formation electronics micromodule; Then the step by step welding from inferior high-temperature step to the minimum temperature step repeats above-mentioned steps, until finish the foundation structure that whole welding of assembling form the TR assembly, more little assembling completing circuit interconnection.
The present invention compares with existing multi-functional TR component process, has following technique effect:
The present invention has the welding technique of THICKNESS CONTROL pin at solder side, employing arranges THICKNESS CONTROL pin 4 at solder side, the solder plating film layer of the certain thickness corresponding melting temperature of solder side sputter coating that requires in different temperatures respectively, also between solder side, fill one deck or two-layer scolder thin slice 3 during two solder side welding, scolder thin slice 3 should be avoided solder thickness control pin 4 and be close to solder side, between the brushing scaling powder, the anchor clamps of putting into multiple entrance pressure force retaining mechanism weld, at first weld the solder side that all use maximum temperature step scolder, weld and then the solder side that all use the second level time high-temperature ladder scolder, so repeatedly, until millimeter wave component electronics micromodule assembling finish.Solder side directly adopts sputter coating to apply one deck solder plating film layer, replaces electroplating plating and is coated with technique formation solderable coating, can use lightweight amphoteric metal alloy material, and corrosion occurs; The peculiar coated surface sputter clean of sputtering coating equipment function can effectively be removed the oxide-film that lightweight ripple alive metal surface forms in the workpiece transfer process; The sputter environment is the anaerobic vacuum environment, and lightweight ripple alive metal surface is in the anoxybiotic inert gas environment after sputter clean, can not reoxidize; Adopt in short-term atom bombardment sputter coating of high energy, the scolder atom has certain depth in the metal-plated face, and adhesive force is greater than the galvanization coating adhesive force in the conversion of metal coating surface atom.Dry process, almost zero-emission does not have the discharge of wastewater restriction.
Solder side does not need to carry out complicated solder side electroplating surface coating to be processed.Electrodeposited coating is for the electroplating processes technique of the many coating of many platings that adhere to reliable needs and implement, and sputtering technology has reduced the probability that sputter coating aliquation comes off; The substrate surface of sputter coating layer takes full advantage of the distinctive substrate surface cleaning before copper plating of equipment function, has reduced to greatest extent coating because polluting the problem of aliquation; The sputter coating layer adopts in short-term high-energy when initial plated film, improved the impact speed of sputtered atom at solder side, formed certain brazing metal atom at the insert depth of components welding face, the welding atom that is conducive to the later stage welding diffuses to form covalent bond or compound.Sputter coating is physics atom kinetic energy transition process, can not change the constituent of solder plating film layer 2; If the little assembling metal of electronics and solder metal composition do not have solderability, available transition metal is as the binding layer, the binding layer material has: titanium, tungsten, titanium-tungsten, tweezer, nichrome etc., titanium commonly used, tungsten, titanium-tungsten, thickness is 1000nm~1500nm, forms the solder metal rete with sputter on the binding layer; The scolder atom is the liquid phase fusion at component material metal of the same race in the welding process, uniformity and uniformity that solder side forms metallic bond are far good, solder thickness was controlled a difficult problem after 4 designs of THICKNESS CONTROL pin had solved welding, had improved the elimination ability of component metals because of coefficient of thermal expansion mismatch generation shear stress; Technical process is dry process, and used processing medium is the inert gas of nontoxic odorless, utmost point low emission, and environmental pollution is little.
The present invention adopts vacuum welding, the welding good fluidity, and the welding cavity is few; Use in the air furnace and weld, fully dehumidifying and use scaling powder before the welding; With component scolder material of the same race the solder side of same temperature section is implemented plated film, fill thin scolder at solder side during welding, can be implemented in simultaneously simultaneously welding on six faces of cube, and keep the thickness of scolder to meet design requirement; 4 designs of solder thickness control pin can be recorded solder thickness by accurate measurement, and very high uniformity and stability are arranged before welding, avoided the detection difficult problem of solder thickness after the welding; The target temperature will raise during plated film, for fear of low temperature target fusing, should adopt high energy in short-term technique finish the bottom plated film, reduce again energy and be interrupted cooling and finish coating film thickness; Solder plating film can be preserved in the environment of starvation and moisture 40 days; Anchor clamps can be the frocks such as cramp frame, keep the multiple entrance pressure power of solder side but will increase the elastomers such as rubber, spring under the point of application; No matter how the temperature step of assembly welding designs, can implement the control of precision welding temperature to the solder side that the temperature upper limit requirement is arranged, be particularly suitable for adopting lead-free solder, a little less than lead-free solder on the traditional welding technique is because of xenogenesis component metals moistened surface ability, use restricted.And have:
(1) simple and convenient, efficient, crudy is reliable and stable, adopts sputter dry method coating process, and the film plating layer thickness evenness is higher than electroplating, and film plating layer metal surface technique is polluted little.Substrate surface can be accomplished the simple metal surface that non-oxidation layer, free from admixture pollute, and the coating atom has certain depth by at a high speed bombardment in substrate.The plated film good uniformity, batch film thickness uniformity≤4%.The film plating layer adhesion is strong, standing+95 ℃, and-55 ℃, be incubated 30 minutes, conversion time≤1 minute, after temperature cycles was impacted 15 times, the plated film aspect can stand the adhesive tape vertical tension of 20N/cm, and is non-foaming, do not come off.
(2) solder thickness uniformity good stability after the welding can be measured quantification.Designed solder thickness control pin 4 at solder side, made solder side can only drop to control pin height when welding, scolder is by self tension force maintenance therebetween, and excess solder is extruded.Before welding assembly, measure control pin thickness, namely know solder thickness, avoided the difficulty that solder thickness is measured after the welding.
(3) high accuracy of welding temperature is controlled.Because solder side overlay coating material and scolder are same material, and composition is almost constant, therefore atom diffusion depth and the speed theory more than fusing point is 100%, much larger than the dissimilar metal atom diffusion rate of tradition plating.Ingredient change easily occurs in plating alloy, and the normal wetting problem that occurs is difficult to take precautions against in advance in welding procedure.
(4) easily realize the selective plating layer.The sputter coating high directivity is the physical bombardment plated film, can realize selective protection, and removable protective layer after plated film is finished is realized selective plating, and the scolder that can not produce rear other appearance surfaces of welding pollutes.
The invention solves the little assembling technique difficult problem that present many temperature step welding is difficult to high-precision temperature control.
The present invention is applicable to little packaging technology that the welding of many temperature step needs high-precision temperature control.
Description of drawings
Fig. 1 is the process method flow chart of many temperature of the present invention step welding high-precision temperature control.
Fig. 2 is the formation schematic diagram of electronics micromodule solder side sputter coating layer.
Fig. 3 is solder thickness control pin 4 distribution schematic diagrams.
Fig. 4 is the assembling decomposing schematic representation of electronics micromodule welding lamination.
Fig. 5 is the top view of Fig. 4.
Fig. 6 is the decomposing schematic representation of the visible section before the welding.
Fig. 7 is the decomposing schematic representation of the visible section after the welding.
Fig. 8 is the composition schematic diagram of electronic building brick.
Among the figure: 1 electronics micromodule, 2 solder plating film layers, 3 scolder thin slices, 4 THICKNESS CONTROL pins, 5 base assemblies, 6 solders side, the little band of 7 transition, 8 targets, 9 scolders, 10 electromagnetic shielding dividing plates, 11 assembly cavitys, 12 electronic building bricks.
The specific embodiment
Consult Fig. 1.Target 8 is sources of physical coating material, and different target material have different melting points temperature, composition, and the fusing point of the solder side film plating layer 2 of formation is just the same with scolder thin slice 3 material melting point, the composition of corresponding melting temperature.Adopting electronics micromodule 1 solder side film plating layer and scolder thin slice 3 all is same component materials.The maximum temperature welding can improve temperature and solve the solderability problem because of without the intensification ceiling restriction.Base assembly 5 is relative concepts, and to micromodule 12, it is the tie that is connected with TR assembly cavity 11, to the TR assembly, refers to the last encapsulating housing of whole assembly; The shape of scolder thin slice 3 and solder side shape are in full accord, because the salient point of solder thickness control pin 4 exists, scolder thin slice 3 is cut out the position that should avoid salient point.Welding process flow can carry out in the steps below.
(1) design solder temperature step.Can reach 25 ℃ ± 5 ℃ melting temperatures according to different scolder fusing points poor, design the solder temperature step, make respectively solder plating film layer 2 and the corresponding scolder target 8 of different step scolder thin slices 3, the corresponding melting temperature of solder side from inferior high-temperature section to minimum temperature section relevant temperature.Determine welding temperature step and solder side shape according to design, the existing of solder side easy machined surface design is laid solder thickness control pin 4 and with welding machine-shaping.Solder thickness control pin 4 in 3 of electronic building brick 12 solders side layings or above more multiple spot polygon layout; Neat cover weld assembly is finished necessary cleaning, makes the solder side cleaning.Make the solder side of base assembly, assembly cavity 11 or electromagnetic shielding dividing plate 10 with lightweight amphoteric metal alloy material;
(2) moulding scolder thin slice.Press solder side shape moulding scolder thin slice 3, scolder thin slice 3 Thickness Ratio design thickness control pin 4 thick 0.04mm~0.06mm, shape is consistent with solder side and avoid THICKNESS CONTROL pin 4.
(3) moulding scolder control pin.To the wherein molding thickness control pin in the solder side, THICKNESS CONTROL pin 4 general design thickness are measured control pin height, record between 0.010mm~0.095mm at each.
(4) plating of solder plating film layer is coated with.The solder side that function substrate on the electronics micromodule 1 and transition motherboard is divided into different temperatures step scolder, solder side directly adopts sputter coating to apply one deck solder plating film layer 2, and solder thickness control this moment pin 4 should equally with other position of solder side plate solder plating film layer 2; The formation technique of solder plating film layer 2 adopts first in short-term atom bombardment plated film of high energy, finishes the bottom plated film, reduces energy again and finishes coating film thickness with being interrupted to cool off; When the two sides of an electronics micromodule 1 or multiaspect have the welding requirements of different temperatures scolder, should first sputter time high-temperature step solder plating film layer 2.After inferior high-temperature step welding was implemented, plating was coated with next temperature step solder plating film layer 2 again.Plating is coated with solder plating film layer 2 thickness 〉=0.8 μ m.
(5) scolder thin slice clamping.Between two solders side of same welding temperature gradient, fill scolder thin slice 3.
(6) clamping of weldment.Press micromodule 1, scolder thin slice 3, base assembly 5 order laminations, put into and advanced again function fixture, fixing.The anchor clamps of putting into multiple entrance pressure force retaining mechanism advance the stove vacuum welding, and scolder thin slice 3 is close to solder side film plating layer material, brushes scaling powder between the two.
(7) welding.With the clamping device of weldment, put into the vacuum drying oven above 25 ℃ ± 5 ℃ of welding temperature gradient fusing points, finish the welding of Current Temperatures step solder side.
(8) cleaning welding edge.The excess solder of extruding after the welding is cleaned out.
(9) protection.Only exposed next step face of weld.
(10) plating of solder plating film layer is coated with.Solder side sputter plating is coated with next the temperature step solder plating film layer 2 that is about to welding.
(11) at first finish the welding of high temperature step; form a primary electron micromodule 1; protect again its weldering base assembly 5 next obsolete other surfaces of temperature step welding; apply the solder plating film layer 2 of the next temperature step of one deck at the solder side sputter coating; weld from inferior high-temperature step to the minimum temperature step step by step after forming electronics micromodule 1; until finish the foundation structure that whole welding of assembling form the TR assembly, more little assembling completing circuit interconnection.Repeat above-mentioned steps, until finish the foundation structure that whole welding of assembling form the TR assembly, more little assembling completing circuit interconnection.Repeat from 5 to 9 step, from inferior high-temperature step to the minimum temperature step, finish welding step by step.
(12) x-ray inspection detects.Check the unexpected defective that welding is inner, in time remove a hidden danger.
(13) turn little assembling circuit interconnection.Carry out the interconnection work such as important chip assembling and circuit bonding.
Consult Fig. 2.The solder side 6 of electronics micromodule 1 is consistent with the outer shape of solder plating film layer 2.If solder side 6 metal ingredients and solder metal composition do not have solderability, available transition metal is as the binding layer, and the binding layer material has: titanium, tungsten, titanium-tungsten, tweezer, nichrome etc., titanium commonly used, tungsten, titanium-tungsten.Sputter solder metal film plating layer again on the binding metal level, then the metal-plated rete is the Composite Coatings rete of two kinds of metals.All sputter coating layer metals are provided by target 8.THICKNESS CONTROL pin 4 is in the mode of distributed rectangular among the figure, layout is in micromodule solder side 6 edges, THICKNESS CONTROL pin 4 shapes mostly are the frustum of a cone or cylindrical shape, can be 3 points, 4 and multiple spot distribution, and the solder side consistency of thickness was as the criterion after the design of counting clamped when welding with assurance.
Consult Fig. 3.THICKNESS CONTROL pin 4 is in symmetrical mode among the figure, layout is in micromodule solder side 6 edges, THICKNESS CONTROL pin 4 shapes mostly are truncated cone shape, can be 3 points, 4 and multiple spot distribution, and the solder side consistency of thickness was as the criterion after the design of counting clamped when welding with assurance.
Consult Fig. 4, Fig. 5.Micromodule is the channel circuit of standalone feature, can be the forms such as multilayer circuit board that are welded on the base assembly 5.Base assembly 5 can be rebound or circuit motherboard.Base assembly 5 provides the space that connects to next stage, and it is base assembly 5 that base assembly 5 is shown in this one-level, only is the solder side of this micromodule at next stage.All be coated with solder plating film layer 2 at the lower surface 6 of micromodule 1 and the upper and lower surface of base assembly 5, THICKNESS CONTROL pin 4 is arranged on the edge of base assembly 5 upper surface solder plating film layers 2 solder side, and 4 signals of THICKNESS CONTROL pin only get final product a solder side setting.Side right-angle side at base assembly 5 also is provided with except solder plating film layer 2, also has the film plating layer 2 of other direction.Scolder thin slice 3 forms the welding lamination between micromodule and base assembly 5.Top view shows the combination schematic diagram after electronics micromodule 1 welding of multichannel differing heights, the transition of stretching out is little be with 7 also will with other components welding.
Above-described only is the preferred embodiments of the present invention.Should be understood that; for the person of ordinary skill of the art; under the prerequisite that does not break away from the principle of the invention; can also make some distortion and improvement; such as; sputter coating can be changed into vacuum vapor plating, manual ward off that the scolder plating is coated with etc., these changes and change and to be considered as belonging to protection scope of the present invention.

Claims (9)

1. the process of the welding of temperature step more than kind electronics micromodule comprises the steps:
1) can reach 25 ℃ ± 5 ℃ temperature step according to different scolder fusing points poor, design solder temperature step is made respectively from inferior high-temperature section to minimum temperature section different temperatures step scolder thin slice and the solder plating film layer of the corresponding melting temperature of solder side;
2) make the solder side of base assembly, assembly cavity (11) or electromagnetic shielding dividing plate (10) with lightweight amphoteric metal alloy material; The solder side that function substrate on the electronics micromodule and transition motherboard is divided into different temperatures step scolder, solder side directly adopt sputter coating to apply one deck solder plating film layer; At the solder thickness control pin of 3 of electronic building brick solder side layings or above more multiple spot polygon layout, and solder thickness=solder thickness is controlled the pin design thickness after the welding;
3) press electronics micromodule (1), scolder thin slice (3), base assembly (5) order lamination, scolder thin slice and solder side film plating layer material are close to, the anchor clamps of putting into multiple entrance pressure force retaining mechanism advance the stove vacuum welding, pass in case of necessity formic acid gas as reducing atmosphere;
4) at first finish the welding of high temperature step, form a primary electron micromodule, protect again next obsolete other surface of temperature step welding of its base assembly, apply the solder plating film layer (2) of the next temperature step of one deck at the solder side sputter coating, by above-mentioned steps 3) formation electronics micromodule; Then the step by step welding from inferior high-temperature step to the minimum temperature step repeats above-mentioned steps, until finish the foundation structure that whole welding of assembling form the TR assembly, more little assembling completing circuit interconnection.
2. the process of many temperature step welding electronics micromodule as claimed in claim 1, it is characterized in that, the formation technique of solder plating film layer adopts first in short-term atom bombardment sputter coating of high energy, finishes the bottom plated film, reduces energy again and finishes coating film thickness with being interrupted to cool off.
3. the process of many temperature step as claimed in claim 1 welding electronics micromodule is characterized in that, scolder thin slice (3) Thickness Ratio design thickness control pin (4) thick 0.04mm~0.06mm, and shape is consistent with solder side and avoid THICKNESS CONTROL pin (4).
4. the process of many temperature step welding electronics micromodule as claimed in claim 1, it is characterized in that, when the two sides of an electronics micromodule or multiaspect have the welding requirements of different temperatures scolder, the inferior high-temperature solder plating film layer (2) of first plating, after inferior high-temperature fusing point step welding was implemented, plating was coated with the solder plating film layer (2) of next melting temperature step again.
5. the process of many temperature step welding electronics micromodule as claimed in claim 1 is characterized in that the plating of solder side sputter coating is coated with solder plating film layer thickness 〉=0.8 μ m.
6. the process of many temperature step as claimed in claim 1 welding electronics micromodule is characterized in that scolder thin slice (3) clamping is close between two solders side of fusing point film plating layer of the same race, and the anchor clamps of putting into multiple entrance pressure force retaining mechanism weld.
7. the process of many temperature step welding electronics micromodule as claimed in claim 1; it is characterized in that; at first finish the welding of high temperature step; form a primary electron micromodule; protect again next obsolete other surface of temperature step welding of other base assembly; apply the solder plating film layer (2) of the next temperature step of one deck at the solder side sputter coating, form electronic building brick after the assembling stack welding.
8. the process of many temperature step welding electronics micromodule as claimed in claim 1 is characterized in that the THICKNESS CONTROL pin is designed to the frustum shape, makes its surface and solder side while plated film, is conducive to wetting.
9. the process of many temperature step welding electronics micromodule as claimed in claim 1 is characterized in that solder side film plating layer metal material and scolder are welding material of the same race, and identical fusing point and composition are arranged.
CN2012103762756A 2012-10-05 2012-10-05 Process for welding electronic microcomponents based on multi-temperature gradient Pending CN102950350A (en)

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CN111384601A (en) * 2020-03-20 2020-07-07 上海无线电设备研究所 Welding assembly interconnection method of high-integration TR (transmitter-receiver) component
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1548266A (en) * 2003-05-16 2004-11-24 三菱综合材料株式会社 Sintering compact of brass solder
CN1855462A (en) * 2005-04-25 2006-11-01 日立协和技术工程公司 Substrate for mounting electronic part and electronic part
CN101235812A (en) * 2007-01-29 2008-08-06 西安庆安制冷设备股份有限公司 Totally-enclosed -type compressor suction duct connecting mechanism
CN102396297A (en) * 2009-02-13 2012-03-28 千住金属工业株式会社 Solder bump formation on a circuit board using a transfer sheet

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1548266A (en) * 2003-05-16 2004-11-24 三菱综合材料株式会社 Sintering compact of brass solder
CN1855462A (en) * 2005-04-25 2006-11-01 日立协和技术工程公司 Substrate for mounting electronic part and electronic part
CN101235812A (en) * 2007-01-29 2008-08-06 西安庆安制冷设备股份有限公司 Totally-enclosed -type compressor suction duct connecting mechanism
CN102396297A (en) * 2009-02-13 2012-03-28 千住金属工业株式会社 Solder bump formation on a circuit board using a transfer sheet

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
杨红云: "梯次温度焊料在VCO模块焊接中的应用", 《2007中国高端SMT学术会议论文集》, 30 September 2007 (2007-09-30), pages 230 - 234 *

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103447646A (en) * 2013-09-05 2013-12-18 中国电子科技集团公司第十研究所 Method for realizing welding between soft base chip circuit board and metal base body without special tool
WO2015180263A1 (en) * 2014-05-25 2015-12-03 广州微点焊设备有限公司 Wrapping welding micro-jointing structure and wrapping welding micro-jointing method for cobalt-based amorphous wire
CN105458433A (en) * 2016-01-20 2016-04-06 福建中科晶创光电科技有限公司 Multi-segment temperature soldering packaging device and method for miniature solid laser
CN106206340A (en) * 2016-07-27 2016-12-07 中国电子科技集团公司第四十研究所 A kind of method of eutectic welding large substrates on shell
CN107225249A (en) * 2017-06-23 2017-10-03 中南大学 A kind of tungsten based on the surface graded alloying of tungsten/steel diffusion connection method
CN107470804B (en) * 2017-08-14 2019-09-17 湖南时变通讯科技有限公司 A kind of Electronic Assemblies technique
CN107470804A (en) * 2017-08-14 2017-12-15 湖南时变通讯科技有限公司 A kind of Electronic Assemblies technique
CN107745166A (en) * 2017-09-15 2018-03-02 西南电子技术研究所(中国电子科技集团公司第十研究所) Phased array active antenna front multilayer bonded copper base welding method
CN107623193A (en) * 2017-09-30 2018-01-23 北京无线电测量研究所 A kind of assemble method of TR components
CN109352112A (en) * 2018-11-06 2019-02-19 中国电子科技集团公司第三十八研究所 A kind of substrate precision welding two-component solder and its welding method
CN110181187A (en) * 2019-05-28 2019-08-30 西南电子技术研究所(中国电子科技集团公司第十研究所) High reliability millimeter wave component Stepped welding assemble method
CN111384601A (en) * 2020-03-20 2020-07-07 上海无线电设备研究所 Welding assembly interconnection method of high-integration TR (transmitter-receiver) component
CN113263236A (en) * 2021-04-29 2021-08-17 四川航天燎原科技有限公司 Pin grid array packaging component PGA desoldering process method
CN113263236B (en) * 2021-04-29 2023-03-21 四川航天燎原科技有限公司 Pin grid array packaging component PGA desoldering process method
CN114833414A (en) * 2022-05-30 2022-08-02 深圳大学 Method for carrying out stainless steel vacuum welding based on copper vapor deposition
CN114833414B (en) * 2022-05-30 2023-11-28 深圳大学 Method for vacuum welding stainless steel based on copper vapor deposition
WO2024017011A1 (en) * 2022-07-22 2024-01-25 厦门市芯颖显示科技有限公司 Light-emitting device, backplane assembly, and display panel

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