CN103842529B - Gold (Au) alloy bonding line - Google Patents
Gold (Au) alloy bonding line Download PDFInfo
- Publication number
- CN103842529B CN103842529B CN201180056967.6A CN201180056967A CN103842529B CN 103842529 B CN103842529 B CN 103842529B CN 201180056967 A CN201180056967 A CN 201180056967A CN 103842529 B CN103842529 B CN 103842529B
- Authority
- CN
- China
- Prior art keywords
- mass
- bonding
- line
- gold
- purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0227—Rods, wires
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01063—Europium [Eu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
The invention provides the ball bonding line that the carried out hundreds of thousands time of the superfine wire below diameter 20 μm is bonded continuously.High-purity Pd of more than the 3N adding up to 5～2 mass % is contained in the high-purity gold of more than 5N, Pt, Cu more than one and the billon parent that formed contains the Ca of 5～50 mass ppm respectively, Mg, La, or contain Be:1～20ppm further and/or add up to the Ce of 1～30 mass ppm, more than one of Y and Eu are as trace additives, further, containing adding up to these trace additives of below 100ppm, thereby inhibiting the surface segregation of the addition element on molten ball surface, and inhibit these precipitates or oxide to be deposited in the increase of resistance to sliding of line when capillary tube leading section results in loop when bonding.By maintaining the smooth state of the surface configuration of the leading section of these capillary tubies, it is suppressed that cervical region infringement in line bonding and do not contact etc. engages bad, makes to be bonded the most continuously to be possibly realized.
Description
Technical field
The present invention relates in order to the electrode (pad) on semiconductor integrated circuit element and circuit layout substrate connected
Line bonding gold (Au) the alloy bonding line of the semiconductor element that electrode (outer lead) connects and uses；More specifically, relate to
Inhibit trace element surface segregation, below a diameter of 20 μm, through stretch line processing gold (Au) alloy bonding line.
Background technology
In the past, connected as the pad on the semiconductor chip used in semiconductor device and outer lead, linear diameter
For the line about 25-35 μm, gold (Au) the alloy bonding line that the high-purity gold using purity to be more than 99.99 mass % constitute more.
Generally, in the method connecting gold (Au) alloy bonding line, main use ultrasound wave combination heat in the first bonding
The bonding method of pressure.
In the method, add heat fusing by the front end of the line exposed from capillary tube front end is carried out fine discharge, and
After forming round by surface tension, bulb portion crimping is engaged (spheroid bonding) in the range of 150-300 DEG C
On the electrode of the semiconductor element of heating, the second bonding subsequently is for directly engaging (wedge shape by ultrasound wave crimping by bonding line
In conjunction with) in outer lead side.
In order to use as the quasiconductor such as transistor or IC, after being bonded through above-mentioned bonding line, for the purpose of protection, use
Epoxy sealing semiconductor chip, bonding line and be mounted with the lead frame etc. of part of semiconductor chip.
Recently, in the requirement improving the miniaturization of quasiconductor, slimming, multifunction and high reliability, as gold
The characteristic that bonding line is necessary is the most diversified, in order to tackle many stitchization of semiconductor chip and along with corresponding narrow
Away from change, though the more graph thinning of gold bonding wire, intensity needed for still requiring that lifting or the first bonding crimp ball out of roundness or
Joint reliability etc. in second bonding, even requires to promote the long-term reliability engaged.
Particularly, along with miniaturization all the more, slimming and the multifunction of semiconductor device, the size of quasiconductor becomes
Little.The most adjoint, the quantity of the input and output terminal of per unit area increases, solder pad space length (pad center spacing)
Size also diminishes to 80 μm, 60 μm from 100 μm.Therefore, it is below 20 μm that the linear diameter of bonding line also starts to attenuate from 25 μm, one
Part also can attempt being the linear diameter of below 15 μm.
But, if the linear diameter of bonding line attenuates, the absolute rigidity of line itself reduces, and the diameter of molten ball also becomes simultaneously
Little, therefore produce will not become under the linear diameter of 25 μm problem, such as tilt or crimp that the bond strength of ball is not enough, engage
Not enough etc. the unfavorable situation of long-term reliability.Herein, " inclination " is for hanging up between the first bonding and the second bonding
Line towards the phenomenon of swaying style, cause occurring that adjacent line interval each other is narrow, unfavorable situation of contact.
Therefore, as Patent Document 1, in order to tackle the thin space of 50 μm of densification, the bonding of 20 μm is employed
Line promotes the joint reliability of the bonding line utilizing the environment mediation sealing resin containing P-compound, hydroxide to seal, and
Disclose by Cu, Pd, Pt, Zn, Ag(first groups of elements) in select at least one above element and total concentration (C1) to be
The scope of 0.005-1.5 mass %, in Ca, Ce, Eu, Dy, Y(second groups of elements) in select at least one above element and always
Meter concentration (C2) is the scope of 0.001-0.06 mass %, in La, Mg, Gd, Tb, Ni(the 3rd groups of elements) in select at least one with
On element and amount to concentration (C3) be 0.001-0.05 mass %, surplus be gold and gold conjunction that inevitably impurity is constituted
Gold bonding wire (paragraph 026 of patent documentation 1).
Therefore, when adding trace element in gold (Au) alloy wire, being compared to alloy gold wire, trace element gets over high concentration
The absolute rigidity of alloy gold wire is the highest, but contrary with promoting various performances, also has less desirable performance and occurs simultaneously.
When billon parent with the addition of the trace element with the tendency improving loop formative, then the shape of gold (Au) ball
Become second nature variation, wedge bond variation.Further, in gold (Au) alloy parent the addition element that contains at molten ball and line
Separate out on surface and aoxidize, or the depression of " shrinkage cavity " occurs in the front end of ball to be referred to as in Japan.The ball of pad on the semiconductor
During bonding (gold (Au) and the joint of aluminum (Al)) or on outer lead during wedge bonding (gold (Au) and the combination etc. of silver-colored (Ag)),
If the online surface of addition element separates out, oxidation, then can become cause can not metallicity engage engage bad reason.Separately
Outward, once produce shrinkage cavity in molten ball, if the carrying out of pad on semiconductor devices is bonded, then produces and be referred to as in Japan
" middle omit ", pressure contact portion be centrally formed can not the field that engages of metallicity, cause the bond strength of entirety to decline
Phenomenon.
Further, since the shape of crimping ball can deform, so that the ball bonding that there will be narrow space length interval becomes difficulty etc.
Problem, and (pad is peeled off from bottom, and due to A1 chip rupture or pad damage occurs owing to the hardness of ball rises
Be ejected to pad cause thickness reduce and be referred to as unfavorable situation of A1 sputtering etc.) probability of happening rise
Problem, is unable to the interpolation trace element of volume.
Such as, when adding calcium (Ca) individually to guarantee intensity, it may appear that calcium (Ca) is on the upper part ground, surface of superfine wire
Separating out, the calcium that result separates out on this surface is oxidized to form surface film oxide, due to the first ball shape being bonded or zygosity not
Stable, therefore the situation that the out of roundness of crimping ball is deteriorated, the wedge bond of the second bonding is deteriorated occurs.
If it addition, the element added is the multiple complexity that becomes, then in gold (Au) alloy, owing to these elements are with multiple
Miscellaneous mode function also separates out on the surface of molten ball, thus can not obtain good initial stage joint, and therefore enhances
High reliability first can not be obtained be bonded and the tendency of the second zygosity being bonded.Therefore, as patent documentation 2 is recorded, develop
Also will not be at molten ball or superfine wire even if adjusting the kind of alloying element and addition thus carrying out ball bonding in an atmosphere
Even if surface formed oxide-film and zygosity good over time passage intermetallic compound generate tendency the lowest
Bonding line.
Prior art literature
Patent documentation
Patent documentation 1: JP 2003-133362 publication
Patent documentation 2:WO2006-35803 publication
Summary of the invention
The problem to be solved in the present invention
But, if becoming the fine rule that linear diameter is 20 μm, then need stronger than the line machinery of the fine rule that linear diameter is 23 μm
Degree improves more than 30%, but if generally mechanical strength improves, the bendability of line reduces.Therefore, even if will not be
Molten ball or the surface of superfine wire in air form oxide-film, and have the line using high mechanical properties from the first bonding description
During the situation that system second is bonded, the root of the crimping ball of the first bonding is also susceptible to be full of cracks, thus becomes so-called cervical region
The problem of the reason of infringement or cervical region fracture.
This is as described in the paragraph 0033-0034 of patent documentation 1, in the gold conjunction of the first groups of elements containing palladium (Pd) etc.
In the bonding line of the third element that with the addition of second element of the Ca etc. of scheduled volume, La etc. in gold, though improve zygosity or
Improve the sphericity of ball shape, but still this problem cannot be solved.
If trace adds calcium (Ca) or beryllium (Be) or rare earth element, compared with zinc (Zn) etc., on molten ball surface not
The element separated out very much.
But, if continuous print carries out the ball bonding of several 100,000 times in an atmosphere, due in capillary surface or leading section
On put aside precipitate or its oxide, make the first bonding or second bonding crimping shape be deteriorated and cause bond strength not
Unfavorable situations such as foot or not contact；Further, since the slickness of capillary surface or leading section is deteriorated, after being bonded first
Loop formed time, crimping ball root be stressed, be therefore susceptible to be full of cracks.Further, if capillary tube smooth
Property be deteriorated, than tilting, it also occur that loop height is abnormal or the deterioration of loop formative with sigmoid curve bending etc.,
Result its become when with epoxy sealing line flowing reason.Miniaturization, high density along with nearest semiconductor device
Change, these develop into narrower than line more adjacent before interval stenosis each other or contact with each other be not suitable for situation
Reason.It addition, the lifting of the performance along with bonding machines, bonding speed (the bonding quantity of time per unit) too increases,
If bonding speed increases, the deterioration (increase resistance to sliding) of the slickness of capillary surface also increases, if bonding speed increases
Adding, the most significantly more appearance produces due to the surface of capillary tube or the deterioration (increase resistance to sliding) of the slickness of leading section
Impact.
The problem of the present invention is for providing a kind of bonding line, even if being the fine rule of below linear diameter 20 μm, at gold (Au)-palladium
Etc. (Pd), in gold (Au) alloy parent, trace element also will not occur segregation but be evenly distributed, even if it addition, having trace
Precipitate, due to keep the slickness on the surface of capillary tube or leading section without increasing resistance to sliding, thus without generation
Unfavorable situation etc. when cervical region infringement or formation loop.
These problems are also applied for the situation that addition is below 100ppm at whole trace element.
The means of solution problem
The present inventor, the most in depth studies to solve above-mentioned problem, and result completes the present invention finally.
That is, according to the present invention, it is provided that gold (Au) alloy bonding line as described below.
(1) a kind of gold (Au) alloy bonding line, it is characterised in that trace element will be contained and shape at gold (Au) alloy parent
The alloy become is processed into the bonding superfine wire of below 20 μm through stretching line, and described gold (Au) alloy parent is by 99.999 matter
Containing with the high-purity palladium that purity is more than 99.9 mass % adding up to 0.05-2 mass % in high-purity gold (Au) of amount more than %
(Pd), at least one in platinum (Pt) and copper (Cu) and constitute；This trace element be the calcium (Ca) by 5～50 mass ppm and 5～
The magnesium (Mg) of 50 mass ppm and the lanthanum (La) of 5～50 mass ppm are constituted.
(2) a kind of gold (Au) alloy bonding line, it is characterised in that trace element will be contained and shape at gold (Au) alloy parent
The alloy become is processed into the bonding superfine wire of below 20 μm through stretching line, and described gold (Au) alloy parent is by 99.999 matter
Amount more than % high-purity gold (Au) in containing with add up to 0.05-2 mass % the palladium that purity is more than 99.9 mass % (Pd),
In platinum (Pt) and copper (Cu) at least one and constitute；；This trace element is the calcium (Ca) by 5～50 mass ppm and 5～50 matter
The magnesium (Mg) of amount ppm and the beryllium (Be) of the lanthanum (La) of 5～50 mass ppm and 1～20 mass ppm are constituted.
(3) a kind of gold (Au) alloy bonding line, it is characterised in that trace element will be contained and shape at gold (Au) alloy parent
The alloy become is processed into the bonding superfine wire of below 20 μm through stretching line, and described gold (Au) alloy parent is by 99.999 matter
Amount more than % high-purity gold (Au) in containing with add up to 0.05-2 mass % the palladium that purity is more than 99.9 mass % (Pd),
In platinum (Pt) and copper (Cu) at least one and constitute；This trace element is the calcium (Ca) by 5～50 mass ppm and 5～50 matter
Amount ppm magnesium (Mg) and the lanthanum (La) of 5～50 mass ppm and add up to the cerium (Ce) of 1～30 mass ppm, yttrium (Y) with
And in europium (Eu) at least one and constitute.
(4) a kind of gold (Au) alloy bonding line, it is characterised in that trace element will be contained and shape at gold (Au) alloy parent
The alloy become is processed into the bonding superfine wire of below 20 μm through stretching line, and described gold (Au) alloy parent is by 99.999 matter
Amount more than % high-purity gold (Au) in containing with add up to 0.05-2 mass % the palladium that purity is more than 99.9 mass % (Pd),
In platinum (Pt) and copper (Cu) at least one and constitute；This trace element is the calcium (Ca) by 5～50 mass ppm and 5～50 matter
Measure magnesium (Mg) and the lanthanum (La) of 5～50 mass ppm of ppm and add up to the beryllium (Be) of 1～20 mass ppm and add up to
In the cerium (Ce) of 1～30 mass ppm, yttrium (Y) and europium (Eu) at least one and constitute.
(5) according to gold (Au) the alloy bonding line according to any one of claims 1～4, wherein, the conjunction of whole trace element
It is calculated as below 100 mass ppm.
The effect of invention
The one-tenth of gold (Au) alloy according to the present invention is grouped into, though the thin line that the linear diameter of bonding line is below 20 μm
Diameter, it may have be prevented from the effect of the cervical region infringement crimping ball of the reason deteriorated as the superficiality of capillary tube.
Further, since improve mechanical strength more before the composition ratio of components of the gold of the present invention (Au) alloy, with
Identical more than the linear diameter of 23 μm all have the effect that suppression tilts, and has the effect of suppression line flowing.
And, it is grouped into according to the one-tenth of gold (Au) alloy of the present invention, there is the effect that molten ball is proper circle ball simultaneously, and
And have simultaneously as before crimping ball be the effect of proper circle.
It addition, in the present invention, due to the minimizing that trace element and impurity are done one's utmost, and by further suppressing hair
The superficiality of tubule deteriorates, and therefore the first bonding will not occur crimp the deterioration of shape or do not contact, greatly with in the second bonding
Gas can more reliably be carried out continuously the bonding of several 100,000 times.
Detailed description of the invention
Gold (Au) the alloy bonding line of the present invention is: with more than (i) 99.999 mass % high-purity gold (Au) and (ii) with
In more than 99.9 mass % high-purity palladium (Pd), platinum (Pt) and the copper (Cu) that add up to 0.05-2% mass % and contain at least
One, as precursor alloy, by adjusting, being selected in this precursor alloy the trace element contained, can obtain having desired
The material of performance.
The element of palladium (Pd), platinum (Pt) and copper (Cu) and gold (Au) fully solid solution, when forming thin bianry alloy, this
A little elements become the element of easy segregation relative to gold (Au).Accordingly, because the content of these elements is 2 mass % to the maximum, so
Purity is more than 99.9 mass %.The material that purity is high is the most preferable, in order to avoid the impact of impurity, and preferably 99.99 mass %
Above.Particularly, the purity of preferred copper is more than 99.999 mass %.In these elements, owing to palladium (Pd) and platinum (Pt) are greatly
In gas not oxidized, even if when molten ball is formed evaporation also will not pollute capillary tube, therefore more applicable than copper (Cu).
Further, since palladium (Pd) is easier to oxidation than platinum (Pt), the precipitate on the pottery constituting capillary tube or oxidation
The preventing effectiveness of the accumulation of thing is that palladium (Pd) is higher than platinum (Pt), and therefore palladium (Pd) is the most applicable.When common in precursor alloy
Add in palladium (Pd) and platinum (Pt) and copper (Cu) optional two or more time, there is no particular limitation for their adding proportion.Palladium
(Pd) or platinum (Pt) relative to gold (Au) all can play equal parent effect.
In the present invention, add adding up to less than at least one in palladium (Pd), platinum (Pt) and the copper (Cu) of 0.05 mass %
When making the superfine wire of below diameter 20 μm in proof gold line more than purity 99.99 mass %, the mechanical strength of closing line is filled not
Point, it may occur that tilt.For the effect played stably, its lower limit added up to is more than 0.05 mass %, more preferably 0.08 mass %
Above.It is it addition, if the total of these thin alloy elements is more than 2 mass %, when carrying out ball bonding, as in the past,
Molten ball becomes really up to the mark and easily causes rupturing of chip, owing to the bond strength of crimping ball is abundant not, and therefore this total
The upper limit is below 2 mass %.For the effect played stably, below preferably 1.5 mass %.
Gold (Au) the alloy bonding line of the present invention is, as trace element with (i) calcium (Ca) and magnesium (Mg) and lanthanum (La)
Be jointly added to necessary, (ii) with beryllium (Be) the first addition element optionally, (iii) with cerium (Ce), yttrium (Y) and europium
(Eu) at least one is as gold (Au) the alloy bonding line of the optional addition element of second group.
By being jointly added to essential component with calcium (Ca) and magnesium (Mg) and lanthanum (La), not only inhibit bonding line
The surface segregation of molten ball, the superficiality of capillary tube also will not deteriorate.Even if add first group and second group optionally add unit
Element also can maintain the preventing effectiveness that capillary surface deteriorates.
Deteriorated by the superficiality preventing this capillary tube, it is suppressed that the resistance to sliding of the bonding line passed through in capillary tube
Rising.As a result, even if after carrying out the bonding of several 100,000 times, it is possible to prevent the cervical region of bonding line from damaging.
In the present invention, using jointly adding as essential component of (i) calcium (Ca) and magnesium (Mg) and lanthanum (La), its reason
As follows.
Calcium (Ca) and magnesium (Mg) and lanthanum (La) all have the effect of the wedge bonding promoting the second bonding.20 μm with
Under graph thinning time, owing to the zygosity of the second bonding has the trend of easy step-down, it is therefore desirable to jointly add.Particularly magnesium
(Mg), notable by adding the lifting effect of the zygosity of magnesium (Mg) the second bonding.The lower limit of magnesium (Mg) is 5 mass ppm, not enough
In this, then there is no the lifting effect of the zygosity of the second bonding.And, the purity of magnesium is preferably more than 99.9 mass %, more preferably
99.99 more than quality %.Even if jointly adding these elements, gold (Au) and palladium (Pd), platinum (Pt) and thin two of copper (Cu)
Unit's alloy there will not be surface segregation.Particularly, calcium (Ca) is the element having surface segregation in gold (Au) elemental metals, but
Surface segregation is not found in the thin bianry alloy of the present invention.It addition, in the thin bianry alloy of the present invention, also
Do not find to affect the calcium (Ca) of surface segregation and magnesium (Mg) and the interaction of lanthanum (La) 3 element.Therefore, even if entering continuously
The bonding that line number is 100,000 times, the superficiality that also will not carry out capillary tube deteriorates or at the precipitate within the line near exit of front end
Or the accumulation of its oxide, therefore capillary tube puts on the resistance to sliding of line or puts on the crimp force of crimping ball, or from crimping
The heat energy won in ball is typically certain.If the most moderately setting the bonding conditions at initial stage, though several 100,000 keys
Remain to the bonding conditions at maintenance initial stage after conjunction, also cervical region will be stayed to damage on crimping ball when bonding.
It addition, in these elements, calcium (Ca) and lanthanum (La) can improve mechanical strength.That is, man-hour is added, owing to passing through stretching line
The synergy of these elements improves the mechanical strength of the epidermal area of superfine wire, and therefore line becomes more detailed rules and regulations and more do not interferes with line
The mechanical strength of core, the mechanical loudness of epidermal area is then directly changed the overall mechanical strength of line.Calcium (Ca) and lanthanum
(La) lower limit is respectively 5 mass ppm, is not enough to this, then can not improve the mechanical strength of superfine wire.And, lanthanum (La)
Purity is more than 99.9 mass %, more than preferably 99.99 mass %.The purity of calcium (Ca) is more than 99 mass %, preferably 99.5 matter
Amount more than %.
It addition, these elements can form the molten ball of proper sphere shape, form the crimping ball of proper circle shape.That is, at gold (Au) alloy
These elements in the molten ball of parent, will not deteriorate capillary surface when crimping, also will not pile up in leading section.Separately
Outward, even if jointly adding calcium (Ca) and magnesium (Mg) and lanthanum (La), when the crimping of gold (Au) alloy wire, find other metal
Element has some accumulations at capillary surface equally.But, these the most prima facie deteriorations of common addition element, even if
The bonding carrying out several 100,000 times also will not make the superficiality of capillary tube deteriorate, and will not pile up precipitate or its oxidation in leading section
Thing.The upper limit of calcium (Ca) and magnesium (Mg) and lanthanum (La) is respectively 50 mass ppm, exceedes this value, then carries out below diameter 20 μm
The bonding of superfine wire time, can not get the molten ball of proper sphere shape, also can not get the crimping ball of proper circle shape.More positively to obtain
To molten ball and the crimping ball of proper circle shape of proper sphere shape, the preferably upper limit of calcium (Ca) and magnesium (Mg) and lanthanum (La) is respectively 40 matter
Amount ppm, and preferably these elements add up to below 100 mass ppm, further, preferably all the adding up to of trace element
Below 100 mass ppm.If the whole trace element in described gold (Au) alloy parent total over 100 mass ppm, oxygen
The compound generation on molten ball surface becomes easy, and therefore in the first bonding, occasional generation zygosity is deteriorated, and also has and makes
The probability that the superficiality of capillary tube deteriorates.
Further, in the situation of magnesium (Mg) or lanthanum (La), if respectively more than 50 mass ppm, below diameter 20 μm
Superfine wire second bonding zygosity reduce.
In the present invention, the reason by beryllium (Be) the first addition element optionally is as follows.
By gold (Au) and palladium (Pd), platinum under the coexisting of calcium (Ca) and the essential component element of magnesium (Mg) and lanthanum (La)
(Pt) and during the crimping of thin bianry alloy of copper (Cu), beryllium is the unit with the effect not making capillary surface deteriorate
Element.Therefore, even if the thin bianry alloy under the coexisting of beryllium (Be) and essential component element to be carried out the key of several 100,000 times
Close, also will not make the first bonding or second bonding shape deteriorate or occur do not contact, also will not bonding time crimping ball on
Cervical region is caused to damage.
It addition, the essential component element of beryllium (Be) and the present invention coexists down, coexist down with lanthanum (La) especially, more improve
The out of roundness of crimping ball.And, the purity of beryllium (Be) is more than 99 mass %, more than preferably 99.9 mass %.It addition, beryllium (Be) with
The essential component element of the present invention coexists down, especially and under the coexisting of calcium (Ca), more improves the warp of thin bianry alloy
Stretch the mechanical strength of epidermal area of line processing, though the superfine wire below diameter 20 μm, line when also can more prevent bonding
Tilt.The lower limit of beryllium (Be) is 1 mass ppm, is not enough to this, then it cannot be seen that pass through the effect of beryllium (Be) elevating mechanism intensity.
On the other hand, beryllium is by hardening for the hardness of molten ball.If superfine wire attenuates, molten ball also diminishes, when ball is bonded
The chip infringement giving pad becomes big.The upper limit of beryllium (Be) is 20 mass ppm, if it exceeds this value, then by below diameter 20 μm
Superfine wire carry out ball bonding time, molten ball becomes really up to the mark and easily causes chip rupture.It addition, on the surface of capillary tube or front
Precipitate or its oxide also can be piled up in end.For the effect played stably, below preferably 15 mass ppm.
In the present invention, using any one of cerium (Ce), yttrium (Y) and europium (Eu) as the optional addition element of second group, reason
By as follows.
With under the coexisting of essential component element, when the crimping of the thin bianry alloy of the present invention, these terres rares
Metal is the element with the prima facie effect that will not deteriorate capillary tube.That is, these rare earth elements are as lanthanum (La),
The superficiality that will not make capillary tube deteriorates, and also will not carry out the accumulation of precipitate or its oxide.Even if accordingly, because continuous print
Several 100,000 bondings, the shape that also will not produce the first bonding or the second bonding deteriorates or the superficiality deterioration etc. of capillary tube,
Because of without staying cervical region to damage on crimping ball after bonding.Cerium (Ce) and yttrium (Y) are compared to europium (Eu), the deterioration of capillary tube
Deng less.And, the purity of cerium (Ce) and yttrium (Y) and europium (Eu) is respectively more than 99.9 mass %, preferably 99.99 mass % with
On.
It addition, these rare earth elements and essential component element coexist down, coexist down with lanthanum (La) especially, more improve
The mechanical strength of epidermal area of the superfine wire through stretching line processing of the bianry alloy of the present invention, though superfine below diameter 20 μm
Line, the inclination of line when the most more preventing bonding.That is, as known to before, these rare earth elements are superfine by increasing
The rigidity of line itself maintains loop formative, the element of the out of roundness of the crimping ball being simultaneously able to maintain that in the first bonding.This
A little effects are identical with beryllium (Be).The lower limit of these rare earth elements is 1 mass ppm, is not enough to this, then as beryllium (Be),
Will not find to improve the effect of mechanical strength.It addition, the higher limit of these rare earth elements is 20 mass ppm, as beryllium (Be),
If it exceeds this value, then, when being bonded by the superfine wire below diameter 20 μm, molten ball becomes really up to the mark and easily causes chip
Rupture.
In the present invention, can be by the addition element of beryllium (Be) optionally first, with by cerium (Ce), yttrium (Y) and europium
(Eu) any one is added in the lump as the optional addition element of second group.Even if by beryllium (Be) and the optional interpolation of second group
, in the thin bianry alloy of the present invention, the most there is not surface segregation in element use.And, the optional terres rares of second group
Element is considered as the element of the effect as playing with the lanthanum (La) in the thin bianry alloy of the present invention.
Embodiment
Hereinafter, described the present invention by embodiment and comparative example.
[embodiment 1-44]
The one-tenth of each sample illustrating embodiment (No. 1-44) in table 1 is grouped into.
High-purity gold (Au), the high-purity palladium (Pd) of 99.99 mass %, platinum (Pt) and purity in purity 99.999 mass %
In thin binary gold (Au) alloy of the high-purity copper (Cu) of 99.999 mass %, the numerical value (quality ppm) recorded according to table 1
Allotment trace element, and cast with vacuum fusion stove is melted.
Being carried out continuously by above-mentioned casting alloy and stretch line processing, making linear diameter is 15 μm and 18 μm, and will through finished heat treatment
Percentage elongation adjusts in 4%.
The one-tenth of the alloy gold wire of table 1 embodiment is grouped into
[comparative example 1-5]
Table 2 illustrates the ratio being only grouped into different thin binary gold (Au) alloys from the one-tenth of the trace element of embodiment
The composition of each sample of relatively example.The superfine wire of thin binary gold (Au) alloy is identical with embodiment, and linear diameter is 18 μm and 15 μm,
And through final hot-working, percentage elongation is adjusted the evaluation to 4%, as carrying out with embodiment.
The one-tenth of the alloy gold wire of table 2 comparative example is grouped into
By these superfine wires in an atmosphere with ultrasound wave and use thermo-compressed mode, by ball bonding method key for the first time continuously
On the A1 pad (film thickness is of about 1 μm) at the 50 μm angles being combined on Si chip, subsequently by ultrasound wave and by thermo-compressed in the way of
By wedge shaped pattern bonding method, these lines are carried out with the wire being made up of 42 alloys of Ag plating second time to be bonded and line.The
The all of ball of one bonding is formed in the A1 pad of 50 μm.
The cervical region intensity evaluation of embodiment and each bonding line of comparative example is performed as follows.Making loop span is 3mm, returns
Road height is 200 μm.Parameter when cervical region intensity is to utilize change bonding, the numerical value of counteragent is carried out.Counteragent is
Refer to form loop shape, after being bonded first, from the surface of the first bonding, capillary tube is moved to IC chip center side
Action.The value of counteragent is become from the displacement of the surface of the first bonding.Now, cervical region becomes fulcrum and makes line curved
Bent.If other parameter is identical, if counteragent value is little, angle of bend diminishes, if counteragent value is big, angle of bend becomes big,
That is, the stress giving cervical region becomes big.This evaluation result represents in table 3 and table 4.It is 1000 mu m bonded 200 with counteragent value
Bar bonding line, and when not having cervical region to rupture, it is labeled as ◎；It is 500 mu m bonded 200 with counteragent value, and does not has cervical region to break
When splitting, it is labeled as zero；It is 500 mu m bonded 200 with counteragent value, during even if a cervical region fracture occurs, is also labeled as △.
Discontiguous frequency when evaluating 500,000 line bondings of each bonding line of embodiment and comparative example.In this evaluation
Loop span is 2mm.Its result represents in table 3 and 4.Frequency of exposure does not refers to not contacting time of the first bonding and the second bonding
The total of number, not engaging number of times is to be labeled as ◎ when 0, is labeled as zero, is labeled as △ during more than 5 when less than 5.And the first key
Close and not the contacting and recur of the second bonding, become to continue bonding and stop to be expressed as during evaluation ×.
The connection performance of each bonding line of embodiment and comparative example, is evaluated respectively by following pull test characteristic.
Pull test is the ProductName " omnipotent bonding tester (BT) (model 4000) " using Dage company to manufacture, will even
Lift upward with hook near the central authorities of the loop span that continued key closes the bonding sample after just starting, fracture load is carried out
Measure.Evaluation result represents in table 3 and 4.
The evaluation of " quality of bonding " is the most relevant with the fracture load of 20 lines.When linear diameter is 18 μm, by 3.5 ×
More than 10mN is labeled as ◎, will be labeled as zero, by less than 1.5 × 10mN labelling in the range of 1.5 × 10～3.5 × 10mN
For △.Further, when linear diameter is 15 μm, 2.5 × more than 10mN is labeled as ◎, will be 1.0 × 10～2.5 × 10mN
In the range of be labeled as zero, be labeled as △ less than 1.0 × 10mN.
Then, the connectivity after 500,000 line bondings of each bonding line of embodiment and comparative example is by commenting respectively as follows
Valency.
Bonding sample after being bonded continuously for 500,000 lines, bears in the same manner as the sample after just starting with bonding
Lotus measures.Evaluation result represents in table 3 and 4.
Even if in any one of the most a diameter of 18 μm, 15 μm, also by the meansigma methods of the traction load pH-value determination pH of 20 with
Load value after bonding just starts compares, and whether traction load value reduces, if within 20%, is labeled as ◎,
It is labeled as zero in the range of 50～20%, is labeled as △ more than 50%.Line bonding number of times is not up to 500,000 times and cannot evaluate
Be then labeled as ×.
Each bonding line of embodiment and comparative example is carried out the leading section on the surface of the capillary tube after 500,000 lines bondings,
Use Shimadzu manufacture manufactured by ProductName " Electronic Micro-Analysis instrument (EPMA(model EPMA-1600)) ", strong with 2000 times
Change carries out elementary analysis and drawing is evaluated.That by mapping result, trace element is concentrated, cover in the bottom of capillary tube
Element represents in table 3 and table 4.
The evaluation result of the alloy gold wire of table 3 embodiment
The evaluation result of the alloy gold wire of table 4 comparative example
Obvious learning from the above embodiments, if the addition of trace element is in setting, then the present invention
The bonding line of gold (Au) alloy, even if the linear diameter of superfine wire is below 18 μm, it is possible to obtain being carried out continuously the effect of bonding
Really.
In contrast, in a comparative example, due to the reason of the following stated, in any case also can not get desired performance.
Comparative example 1 is the ormal weight being not up to due to the palladium (Pd) of element necessary in the present invention.
Comparative example 2 is owing to the palladium (Pd) of element, the aggregate value of platinum (Pt) and copper (Cu) must exceed rule in the present invention
Quantitatively.
Comparative example 3 is that in the present invention owing to containing, necessary microelements of calcium (Ca) is not up to ormal weight, and necessary
Trace element lanthanum (La) has exceeded ormal weight.
The trace element beryllium (Be) that comparative example 4 is optional in the present invention owing to containing has exceeded ormal weight.
Comparative example 5 is trace element cerium (Ce) optional in the present invention owing to containing and europium (Eu) has exceeded regulation respectively
Amount.
Thus, in comparative example 3～5 is all the surface segregation of the trace element due to these surpluses, and there occurs at hair
The precipitate of these elements on tubule surface or the accumulation of its oxide.
Probability is utilized in industry
The alloy of the present invention is particularly well-suited to automobile lift-launch semiconductor device, use in the environment of easily uprising temperature
Bonding line used in quasiconductor.
Claims (5)
1. a billon bonding line, it is characterised in that the alloy formed containing trace element at billon parent is through stretching
Line is processed into the bonding superfine wire of below 20 μm, and described billon parent is by the high-purity gold more than 99.999 mass %
In be the copper of more than 99.9 mass % containing purity, and in palladium that purity is more than 99.9 mass % and platinum at least one and
Constituting, wherein at least one in copper and palladium and platinum adds up to 0.05-2 mass %；This trace element is by 5～50 mass
The lanthanum of the calcium of ppm and the magnesium of 5～50 mass ppm and 5～50 mass ppm is constituted.
2. a billon bonding line, it is characterised in that the alloy formed containing trace element at billon parent is through stretching
Line is processed into the bonding superfine wire of below 20 μm, and described billon parent is by the high-purity gold more than 99.999 mass %
In be the copper of more than 99.9 mass % containing purity, and in palladium that purity is more than 99.9 mass % and platinum at least one and
Constituting, wherein at least one in copper and palladium and platinum adds up to 0.05-2 mass %；This trace element is by 5～50 mass
The beryllium of the calcium of ppm and the magnesium of 5～50 mass ppm and the lanthanum of 5～50 mass ppm and 1～20 mass ppm is constituted.
3. a billon bonding line, it is characterised in that the alloy formed containing trace element at billon parent is through stretching
Line is processed into the bonding superfine wire of below 20 μm, and described billon parent is by the high-purity gold more than 99.999 mass %
In be the copper of more than 99.9 mass % containing purity, and in palladium that purity is more than 99.9 mass % and platinum at least one and
Structure, wherein at least one in copper and palladium and platinum adds up to 0.05-2 mass %；This trace element is by 5～50 mass ppm
Calcium and the magnesium of 5～50 mass ppm and the lanthanum of 5～50 mass ppm and add up to the cerium of 1～30 mass ppm, yttrium and
In europium at least one and constitute.
4. a billon bonding line, it is characterised in that the alloy formed containing trace element at billon parent is through stretching
Line is processed into the bonding superfine wire of below 20 μm, and described billon parent is by the high-purity gold more than 99.999 mass %
In be the copper of more than 99.9 mass % containing purity, and in palladium that purity is more than 99.9 mass % and platinum at least one and
Constituting, wherein at least one in copper and palladium and platinum adds up to 0.05-2 mass %；This trace element is by 5～50 mass
The calcium of ppm and the magnesium of 5～50 mass ppm and the lanthanum of 5～50 mass ppm and add up to 1～20 mass ppm beryllium and
At least one in cerium, yttrium and the europium of 1～30 mass ppm is added up to constitute.
5. according to the billon bonding line according to any one of claim 1～4, wherein, adding up to of whole trace element
Below 100 mass ppm.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2011/054570 WO2012117512A1 (en) | 2011-03-01 | 2011-03-01 | BONDING WIRE OF GOLD (Au) ALLOY |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103842529A CN103842529A (en) | 2014-06-04 |
| CN103842529B true CN103842529B (en) | 2016-08-24 |
Family
ID=46757474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180056967.6A Active CN103842529B (en) | 2011-03-01 | 2011-03-01 | Gold (Au) alloy bonding line |
Country Status (4)
| Country | Link |
|---|---|
| CN (1) | CN103842529B (en) |
| SG (1) | SG190370A1 (en) |
| TW (1) | TWI448568B (en) |
| WO (1) | WO2012117512A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3497756B1 (en) | 2016-08-11 | 2021-09-29 | D.M. Benatav Ltd. | Multiple diameter wire connection |
| CN107800398A (en) * | 2017-11-17 | 2018-03-13 | 中电科技集团重庆声光电有限公司 | A kind of bonding method for controlling SAW device wire bond root micro-damage |
| JP6926245B2 (en) * | 2018-01-30 | 2021-08-25 | タツタ電線株式会社 | Bonding wire |
| CN108922876B (en) * | 2018-06-27 | 2020-05-29 | 汕头市骏码凯撒有限公司 | Gold alloy bonding wire and manufacturing method thereof |
| CN109273055B (en) * | 2018-08-15 | 2021-12-03 | 北京康普锡威科技有限公司 | Method for judging alloy surface segregation state and method for manufacturing alloy |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2779683B2 (en) * | 1990-03-13 | 1998-07-23 | 新日本製鐵株式会社 | Bonding wire for semiconductor device |
| JP3690902B2 (en) * | 1996-07-31 | 2005-08-31 | 田中電子工業株式会社 | Gold alloy wire for wedge bonding |
| US5945065A (en) * | 1996-07-31 | 1999-08-31 | Tanaka Denshi Kogyo | Method for wedge bonding using a gold alloy wire |
| CN1236691A (en) * | 1998-05-15 | 1999-12-01 | 田中电子工业株式会社 | Bonding gold alloy wire and applications thereof |
| JP4337326B2 (en) * | 2002-10-31 | 2009-09-30 | 千住金属工業株式会社 | Lead-free solder and soldered articles |
| CN1594620A (en) * | 2004-07-06 | 2005-03-16 | 贺利氏招远贵金属材料有限公司 | Alloy gold wire and manufacturing method thereof |
| US20080050267A1 (en) * | 2004-09-30 | 2008-02-28 | Hiroshi Murai | Au Alloy Bonding Wire |
| JP4793989B2 (en) * | 2006-03-29 | 2011-10-12 | 田中電子工業株式会社 | Gold alloy wire for bonding wire with high initial bondability, high bond reliability and high roundness of crimped ball |
| JP5010495B2 (en) * | 2007-02-06 | 2012-08-29 | 新日鉄マテリアルズ株式会社 | Gold wire for semiconductor element connection |
| JP4150752B1 (en) * | 2007-11-06 | 2008-09-17 | 田中電子工業株式会社 | Bonding wire |
| JP2010192497A (en) * | 2009-02-16 | 2010-09-02 | Sumitomo Metal Mining Co Ltd | Gold alloy thin wire for bonding and method of manufacturing the same |
-
2011
- 2011-03-01 SG SG2013039466A patent/SG190370A1/en unknown
- 2011-03-01 WO PCT/JP2011/054570 patent/WO2012117512A1/en active Application Filing
- 2011-03-01 CN CN201180056967.6A patent/CN103842529B/en active Active
- 2011-03-17 TW TW100109136A patent/TWI448568B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW201237191A (en) | 2012-09-16 |
| TWI448568B (en) | 2014-08-11 |
| CN103842529A (en) | 2014-06-04 |
| SG190370A1 (en) | 2013-06-28 |
| WO2012117512A1 (en) | 2012-09-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3969671B2 (en) | Au alloy bonding wire | |
| US9103001B2 (en) | Ag—Au—Pd ternary alloy bonding wire | |
| CN103842529B (en) | Gold (Au) alloy bonding line | |
| US7820913B2 (en) | Bonding wire for semiconductor device | |
| US8101030B2 (en) | Manufacturing method for composite alloy bonding wire | |
| US20080240975A1 (en) | Ag-based alloy wire for semiconductor package | |
| US7645522B2 (en) | Copper bonding or superfine wire with improved bonding and corrosion properties | |
| US20120312428A1 (en) | High strength and high elongation ratio of au alloy bonding wire | |
| JP5840328B1 (en) | Bonding wire for semiconductor device and manufacturing method thereof | |
| KR101536554B1 (en) | Bonding wire | |
| TWI401323B (en) | Wire with gold alloy wire | |
| Chuang et al. | Formation and growth of intermetallics in an annealing-twinned Ag-8Au-3Pd wire bonding package during reliability tests | |
| JP5671512B2 (en) | Bonding wire | |
| KR100801444B1 (en) | Au-Ag based alloy wire for a semiconductor package | |
| JP2010245390A (en) | Bonding wire | |
| CN101630670A (en) | Ag-based alloy lead wire for semiconductor encapsulation | |
| CN108922876A (en) | A kind of billon bonding wire and its manufacturing method | |
| CN108823453A (en) | The low golden billon bonding wire of one kind and its manufacturing method | |
| CN112342426A (en) | Novel silver alloy bonding wire and manufacturing method thereof | |
| JP5024907B2 (en) | Gold (Au) alloy bonding wire | |
| JP5840327B1 (en) | Bonding wire for semiconductor device and manufacturing method thereof | |
| KR101441551B1 (en) | Ag alloy wire for semiconductor package | |
| KR101394619B1 (en) | Anti-oxidation bonding wire for semiconductor packaging to be coated with either anti-oxidation organic or anti-oxidation organic and metal | |
| CN115398607A (en) | Jin Beifu bonding wire, method for manufacturing the same, semiconductor wire bonding structure, and semiconductor device | |
| US6991854B2 (en) | Gold alloy bonding wire for semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |