CN1236691A - Bonding gold alloy wire and applications thereof - Google Patents
Bonding gold alloy wire and applications thereof Download PDFInfo
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- CN1236691A CN1236691A CN99106623A CN99106623A CN1236691A CN 1236691 A CN1236691 A CN 1236691A CN 99106623 A CN99106623 A CN 99106623A CN 99106623 A CN99106623 A CN 99106623A CN 1236691 A CN1236691 A CN 1236691A
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- 229910001020 Au alloy Inorganic materials 0.000 title abstract description 6
- 239000003353 gold alloy Substances 0.000 title abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 238000003466 welding Methods 0.000 claims abstract description 51
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052737 gold Inorganic materials 0.000 claims abstract description 38
- 239000010931 gold Substances 0.000 claims abstract description 38
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 31
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 29
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 21
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 18
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 9
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 27
- 239000000203 mixture Substances 0.000 claims description 19
- 238000005476 soldering Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000007731 hot pressing Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 abstract description 4
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 description 18
- 239000000956 alloy Substances 0.000 description 18
- 230000007547 defect Effects 0.000 description 13
- 208000037656 Respiratory Sounds Diseases 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 7
- 238000005266 casting Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 238000005482 strain hardening Methods 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000994 depressogenic effect Effects 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- SKIIKRJAQOSWFT-UHFFFAOYSA-N 2-[3-[1-(2,2-difluoroethyl)piperidin-4-yl]oxy-4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound FC(CN1CCC(CC1)OC1=NN(C=C1C=1C=NC(=NC=1)NC1CC2=CC=CC=C2C1)CC(=O)N1CC2=C(CC1)NN=N2)F SKIIKRJAQOSWFT-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
A gold alloy wire of semiconductor component for welding including one to less than 1,000 wt.ppm of at least one of Co and Zn, one to less than 1,000 wt.ppm and one to less than 400 wt.ppm of at least one of La, Y, Ga, Be, Ca and Eu are contained in high purity gold. Or, one to less than 1,000 wt.ppm of Co is contained in high purity gold. The gold alloy wire can used for wire bonding or forming welding head.
Description
The present invention relates to a kind of bonding gold alloy wire of semiconductor device by using, with the method for this wire welding semiconductor element and used the semiconductor element/device of this welding wire, described welding can be wire bond or flip-chip weldering.
Usually, by reach in purity 99.99% or the high-purity gold of higher (weight content) in add the billon silk that a small amount of other metallic element is made because its excellent reliability, thereby be widely used in the welding of IC chip electrode and semiconductor devices outer lead.
The welding of semiconductor element typically utilizes the billon silk to be undertaken by the ultrasonic mode that involves thermocompression bonding, and described semiconductor element just forms semiconductor device after sealing with resin subsequently.
Fig. 1 illustrates one and has formed the semiconductor devices that wire loop is finished wiring by the ultrasonic mode that involves thermocompression bonding, and wherein, label 1 is represented an IC chip, 2 represent an aluminium electrode that is positioned on the IC chip, and 3 represent the billon silk, and 4 represent lead frame, 5 represent first solder joint, and 6 represent second solder joint.
Recently, under the hot environment that the heat of the external environment condition when often being exposed to by power supply or use owing to semiconductor devices produces, this just requires welding wire when bearing long high temperature action, and reply is welded with low infringement.For achieving the above object, good several is to prevent from semiconductor devices is suggested in the alloying component that the hot strength that places the welding of its welding wire of back under the hot conditions takes place to lose efficacy.For example, Japanese patent application NO.10-4115 (not entering substantive examination) discloses a kind of Co of containing, and the billon silk of compositions such as Ge (is made) lead-in wire weldering sample according to reports and still have very high hot strength after being placed 100 hours under 200 ℃ with this billon silk; Japanese patent application NO.2-215140 (not entering substantive examination) discloses the billon silk of compositions such as a kind of Mn of containing, and (makes) the wire bond sample according to reports with this billon silk and still have good shear strength after placing 900 minutes under 250 ℃.
On the other hand, if Xiang Jinzhong adds additive in order to obtain still having the billon silk of strong binding ability after placing hot environment, just can produce the problem that the anti-vibration fracture property of resulting billon silk will reduce.And cause short circuit owing to vibration in the transportation of semiconductor devices before resin-sealed in order to prevent, require the billon silk to possess certain anti-vibration fracture property.
So far, know, when the billon silk soldering reliability when being improved, one or more in its (circle) sphericity, vibration fracture rate and the chip crackle rate will be affected.Recently, place the soldering reliability under the hot conditions to have higher requirement again to the billon silk in the longer time.Even these requirements can not attain full and complete satisfaction after adopting billon silk above-mentioned.
The object of the present invention is to provide a kind of billon silk, this alloy silk still has higher soldering reliability after placing hot environment for a long time, and has the performance of high (circle) sphericity, low vibration fracture rate and good anti-IC chip crackle.
Another object of the present invention is to provide a kind of wire bonding method, a kind of method and a kind of semiconductor element/device that adopts alloy gold wire to weld that forms the wire bond head, by them, can make the alloy silk after placing hot environment for a long time, still have higher bonding reliability, and have the performance of high (circle) sphericity, low vibration fracture rate and good anti-IC chip crackle.
By further investigation, the inventor finds among above-mentioned purpose can be by adding some in the high-purity gold Co and the Zn (being called first group element hereinafter) at least a, the Mn of some, and the La of some, Y, Gd, Be, Ca, at least a among the Eu (being called second group element hereinafter), perhaps the mode of the Mn of the Co of interpolation some and some reaches in the high-purity gold, thereby can realize purpose of the present invention.Perhaps, also can be added with the Pd of some in the above-mentioned billon, Pt, Cu, Ag, at least a among the Ni (being called three group elements hereinafter).
Below be embodiments of the invention:
1) the billon silk use in the welding of a kind of semiconductor element, be included in add in the high-purity gold weight content be from 1ppm to less than at least a the Co of 1000ppm and the Zn, weight content is the Mn of 1-1000ppm, reaching weight content is the La of 1-400ppm, Y, Gd, Be, Ca, at least a among the Eu.
2) according to 1) welding of described semiconductor element use the billon silk, wherein said La, Y, Gd, Be, Ca, at least a among the Eu is from La, Y, Gd, Be, selection is at least a among the Eu.
3) according to 1) welding of described semiconductor element uses the billon silk, wherein said La, Y, Gd, Be, Ca, at least a among the Eu is Ca.
4) according to 1) described semiconductor element welding billon silk, wherein said La, Y, Gd, Be, Ca, at least a weight content that includes is that 5ppm or more Ca and weight content are 5ppm or more La among the Eu, Y, Gd, Be, at least a among the Eu, wherein Ca and described La, Y, Gd, Be, at least a weight content total amount is 10-400ppm among the Eu.
5) according to 1) welding of described semiconductor element uses the billon silk, further includes the Pd that weight content is 0.01-2.0%, Pt, Cu, Ag, at least a among the Ni.
6) the billon silk use in the welding of a kind of semiconductor element, is included in that the interpolation weight content is the Mn of 1-1000ppm from 1ppm to Co and weight content less than 1000ppm in the high-purity gold.
7) according to 6) welding of described semiconductor element uses the billon silk, further includes the Pd that weight content is 0.01-2.0%, Pt, Cu, Ag, at least a among the Ni.
8) a kind of method that connects up between semiconductor element and outside lead may further comprise the steps:
Preparation one has the semiconductor element of electrode;
Prepare an outside lead;
Prepare semiconductor element welding billon silk, wherein said billon silk comprises following composition, it be included in the high-purity gold add weight content for from 1ppm to less than at least a the Co of 1000ppm and the Zn, weight content is the Mn of 1-1000ppm, and weight content is the La of 1-400ppm, Y, Gd, Be, Ca, at least a among the Eu, be included in perhaps in the high-purity gold that to add weight content be the Mn of 1-1000ppm from 1ppm to Co and weight content less than 1000ppm;
The end of described semiconductor element welding with the billon silk is soldered on the electrode of described semiconductor element;
The welding of described semiconductor element is soldered on the described outer lead with billon silk a section away from welding ends, and in the welding section position or its vicinity described billon silk is cut off.
9) according to 8) described method, wherein said welding wire is 1)～7) in any.
10) a kind of method that forms soldering tip on electrode may further comprise the steps:
Prepare electrode;
Prepare semiconductor element welding billon silk, wherein said billon silk comprises following composition, it be included in the high-purity gold add weight content for from 1ppm to less than at least a the Co of 1000ppm and the Zn, weight content is the Mn of 1-1000ppm, and weight content is the La of 1-400ppm, Y, Gd, Be, Ca, at least a among the Eu, be included in perhaps in the high-purity gold that to add weight content be the Mn of 1-1000ppm from 1ppm to Co and weight content less than 1000ppm;
On described electrode, form soldering tip with the billon silk with described semiconductor element welding.
11) according to 10) method of described formation protuberance, the end that the step of wherein said formation soldering tip includes the described welding wire of heating makes it to form a spheroid, oppress described spheroid to electrode, the described welding wire of drawing when described spheroid is by hot pressing makes it to disconnect near hot pressing spheroid vicinity.
12) according to 10) or 11) described method, wherein said welding wire is 1)～7) in any.
13) semiconductor devices that any billon silk welds a kind of the employing corresponding to 1)～7), this semiconductor devices can comprise that one has the semiconductor element with the electrode of billon wire bond on it.As an alternative, it also can comprise a semiconductor element, that has electrode have the substrate (substrate) of electrode and be welded in the semiconductor element electrode and substrate (substrate) electrode between soldering tip.
The present invention in detail with reference to the accompanying drawings, in the accompanying drawing:
Figure 1 shows that the welding of the billon silk that employing wire bond method forms between an IC chip and a lead frame;
Fig. 2 A～2C shows the process that forms a wire bond head on an IC chip electrode;
Fig. 3, Fig. 4 are the instantiation of semiconductor devices.
Below the present invention is described in further details.
A) raw material gold
The raw material gold is selected for use as far as possible through highly purified high-purity gold, and its purity is the content meter by weight, should reach 99.99% at least, is not less than 99.995% better if can reach, and preferably can reach to be not less than 99.999%.So unavoidable impurities content content meter by weight in the billon silk of the present invention as far as possible can be less than 0.01%, less than 0.005% better, preferably can be less than 0.001%.Along with the reduction of unavoidable impurities content, harmful element just can be removed, thereby reliability is improved, and we are desired just for this.
B)Co,Zn
A) purpose of the present invention can be at least a by adopting among the Co that adds some in described high-purity gold and the Zn, and add in second group element of the Mn of some and some at least a simultaneously, or adopt the Co that adds some in described high-purity gold, and the mode of adding the Mn of some simultaneously reaches.
B) in said components, if contain at the same time under the situation at least a in second group element that Mn that weight content is 1-1000ppm and weight content be 1-400ppm, among Co and the Zn at least a content by weight the content meter reach 1ppm or more, perhaps contain weight content at the same time and be under the situation of Mn of 1-1000ppm, the content of Co content meter by weight reaches 1ppm or more, compare with other components that do not contain with sample ingredient, the high-temperature soldering intensity of such alloy silk will increase.Such beneficial effect at least a content in Co and Zn can obtain before the content meter reaches 1% by weight.When content surpassed 1%, the IC chip just might crack.But, since the present invention will at least a content in described first group element be positioned at weight content be from 1ppm in scope less than 1000ppm.So in aforementioned multielement coexistence composition, at least a content is limited in from 1ppm in the scope less than 1000ppm among described Co and the Zn.Yet for the sake of simplicity, this scope is used " weight content is 1-1000ppm " expression hereinafter.
C)Mn
A) purpose of the present invention can be by adding the Mn of some in described high-purity gold, and add in first group element of some at least a at least a and second group element simultaneously, perhaps in described high-purity gold, add the Mn of some, and the mode of adding the Co of some simultaneously reaches.
B) in said components, if contain weight content at the same time and be under the situation at least a in second group element of at least a and 1-400ppm in first group element of 1-100ppm, perhaps contain weight content at the same time and be under the situation of Co of 1-1000ppm, the weight content of Mn reaches 1ppm or more, compare with other components that do not contain with sample ingredient, the high temperature bonding intensity of such alloy silk will increase.Above beneficial effect at least a content in Co and Zn can obtain before the content meter reaches 1% by weight, when its content above 1% the time, the IC chip just might crack.But, the present invention is owing to concentrate on the content of Mn in the scope that weight content is 1-1000ppm.So in aforementioned multielement coexistence component, the content of Mn is limited in the scope that weight content is 1-1000ppm.
D)La,Y,Gd,Be,Ca,Eu
A) purpose of the present invention can be at least a in second group element that in described high-purity gold, adds some by adopting, at least a in first group element of some, and the mode of the Mn of some reaches.
B) in said components, if contain weight content at the same time and be at least a and weight content in first group element of 1-1000ppm and be under the situation of Mn of 1-1000ppm, at least a weight content reaches 1ppm or more in described second group element, compare with other components that do not contain with sample ingredient, the high-temperature soldering intensity and the anti-vibration fracture property of this component (billon silk) will increase.If weight content at least a in described second group element surpasses 400ppm, then its (circle) sphericity will variation.Therefore, in the component of aforementioned multielement coexistence, at least a weight content is limited in the 1-400ppm scope in described second group element.
C) in addition, in said components, if any in the following three kinds of compositions of at least a employing in second group element of described some, so, compare with the component that adopts that only to contain weight content be 1ppm to less than the Ca of 10ppmm, its (circle) sphericity will significantly improve.Therefore, in described second group element at least a preferably include in following three kinds of compositions any:
ⅰ) weight content is the La of 1-400ppm, Gd, and Be, at least a among the Eu;
ⅱ) weight content is the Ca of 10-400ppm; And
ⅲ) weight content is at least the La of 5ppm, Y, and Gd, Be, at least a and weight content is at least the Ca of 5ppm among the Eu, and the weight content total amount of above composition should be controlled within the 10-400ppm.
E)Pd,Pt,Cu,Ag,Ni
A) work as Pd, Pt, Cu, Ag, at least a A that also is added among the Ni (the 3rd group element))～D) in the described multielement coexistence component when any, purpose of the present invention also can realize.
B) in mentioned component, at least a and weight content is the Mn of 1-1000ppm in first group element of 1-1000ppm if contain weight content at the same time and be, and contain in addition or do not contain under the situation at least a in second group element of 1-400ppm, when at least a weight content is in the scope of 0.01-2% in described the 3rd group element, can reach too as the same effect that does not contain any component in the 3rd group element.Therefore, in aforementioned multielement coexistence component, at least a weight content is limited in the scope of 0.01-2.0% in described the 3rd group element.
F) preparation of billon silk
A kind of best preparation method of billon silk of the present invention is described below:
The element that adds predetermined content above-mentioned is in the high-purity gold, and in vacuum melting furnace, melt, form ingot casting through casting then, the gained ingot casting is after grooved roll and wire drawing machine cold working and intermediate annealing processing, again through last cold working (fine finishining), finally obtain the filament that diameter is 10-100 μ m, described filament also will be through last annealing in process.
G) use
A) semiconductor element of the present invention welding is suitable for semiconductor element (as the IC chip) is soldered to the lead material of outer lead or lead frame and is used for the encapsulation of semiconductor devices as the method that involves thermocompression bonding with Supersonic with the billon silk most, and it also can be used to form the electrode soldering tip etc. of IC chip.Semiconductor element/device after above-mentioned soldering can be sealed with resin subsequently again.
B) wire bond method
Referring to Fig. 1, semiconductor element or IC chip 1 have the electrode 2 (figure only illustrates an electrode) that is arranged on the IC chip 1 among the figure, and a lead frame contains outer lead 4 (lead-in wire only is shown among the figure).
One billon silk is inserted into (not shown) in the capillary, and an end of this billon silk is heated to form a spheroid.Subsequently, in heating IC chip 1, reduce capillary, so that described spheroid is depressed on the electrode 2.By said process, described spheroid through deformation become flat and make alloy silk 3 maybe this end be hot-pressed on the electrode 2.Like this, just, formed first solder joint 5.
Then, capillary is moved to an outer lead 4 tops, here, according to being depressed on the outer lead frame 4 away from a section of first solder joint in the alloy silk and drawing alloy silk makes it to make described alloy wire bond to outer lead in pressurized fragment position or near disconnect it mode.Like this, just, formed second solder joint 6 shown in Figure 1.
The method of above-mentioned formation first solder joint and second solder joint is not limited among the present invention.
C) formation of wire bond head
In conjunction with Fig. 2 A～2C a kind of simple Hubbing method is described.
Referring to Fig. 2 A.Among the figure, a billon silk 12 is inserted in the capillary 11, and forms a spheroid 14 by the mode that adds a top of thermalloy silk 12 with a calandria 13.
Referring to Fig. 2 B.Among the figure, capillary 11 is depressed and is forced on the electrode 15 of an IC chip 16 or a substrate (substrate) or printed panel (not shown), and meanwhile described IC chip 16 or substrate (substrate) or printed panel are heated.By said process, described spheroid 14 distortion (one-tenth deformation spheroid or wire bond head 14 ').
Referring to Fig. 2 C.Among the figure, when alloy silk 12 is clamped by clamp 17, promote capillary 11, make deformation spheroid 14 ' with the alloy silk owing to rupture separate.Like this, just, obtain deformation spheroid or wire bond head 14 '.Label 18 be wire bond head 14 ' a segment trailer.
Be forced on the electrode 15 back (shown in Fig. 2 A-2B) at spheroid 14,, also can form described wire bond head (not shown) by from deformation spheroid or wire bond head 14 ' top or cut off the method for alloy silk near it.
The method that more than forms the wire bond head is not limited among the present invention.Described wire bond head can form on the electrode of any semiconductor element or substrate (substrate) or analog.
H) semiconductor devices
The invention allows for a kind of semiconductor element/device that has used any billon silk of the present invention.Described wire bond head also can form on substrate (substrate) or printed panel or analog.
Fig. 3 shows an instantiation that contains the semiconductor devices that wire bond connects, 21 expression semiconductor element or IC chips wherein, the electrode of 22 expression semiconductor elements 21,23 expression outside leads, 24 expression bonding gold alloy wires, 25 expression sealing resins.
Fig. 4 shows the instantiation that another kind contains the semiconductor devices that wire bond connects, wherein, 31 expression semiconductor element or IC chips, the electrode of 32 expression semiconductor elements 31,33 expression one substrate (substrate) or printed panels, the electrode of 34 expression substrates (substrate) or printed panel, 35 expression billon soldering tips connect.
I) effect of the present invention
The present invention, new type alloy silk particularly of the present invention has very high soldering reliability when being in hot environment for a long time, and has good (circle) sphericity, and little vibration fracture rate and chip crackle rate.
Example
Example 1:
In purity is to add the Co of predetermined quantity in the high-purity gold of 99.999% (weight), Mn and La, and in a vacuum melting furnace, melt, form the ingot casting that contains composition shown in the table 1 through casting then.The gained ingot casting is after the cold working of grooved roll and drawing machine and intermediate annealing are handled, and through last cold working (fine finishining), forming diameter is the filament of 30 μ m again, and described filament is also further handled through final annealing, to obtain 4% percentage elongation.The surface of gained alloy silk also is coated with surface conditioning agent.
Adopt automatic welder(welding machine) (Shinkawa K.K UTC-100 type) 96 aluminium electrodes on the one IC chip and 96 outer leads on the copper alloy lead frame to be carried out wire bond with above-mentioned alloy silk.Sample before this sealing is known as " welding sample ".
Then, with above-mentioned welding sample with resin-sealed, thereby obtain a hermetically sealed semiconductor devices sample (being called " semiconductor devices sample " hereinafter).
Below measure and adopt above-mentioned sample to carry out.
The hot test of welding
Measure the resistance between each lead riser of semiconductor devices sample in advance.Then, keep sample 200 ℃ following 2000 hours and it is quickened hot test, remeasure the resistance between each lead riser subsequently.If changes in resistance is 1 Ω or more, this welding section is considered to a defective section so.More than test selects 100 sections to carry out from four samples at random.The number of defective section with the high temperature defect rate represented with percentage shown in the table 1.
(circle) sphericity
In air, form a ball with automatic welder(welding machine) in the end of billon silk, and examine under a microscope to measure its vertical and lateral dimension with 1000 times multiplication factor.Described (circle) sphericity is determined and is got the mean value of 10 balls by following formula, its result is table 1 illustrate.
(circle) sphericity=weak point diameter/long diameter
The vibration fracture rate
The welding sample is placed in the conveyor hopper that is located on the vibration rig and vibrates.Described vibration frequency is 100Hz, and amplitude is 0.1mm.After 20,000 vibrations, the quantity of the alloy silk that has ruptured by microscope statistics.More than test selects 100 alloy silks to carry out from four weldering samples at random.The number of the alloy silk that has ruptured with the vibration fracture rate shown in the table 1.
The chip crackle
Is to soak 30 minutes in 1% the KOH aqueous solution the weldering sample in weight content concentration, removes the aluminium electrode film on the IC chip, observes the surface of IC chip then and sees whether have the chip crackle.Above-mentioned test selects 100 electrodes to carry out from four weldering samples at random.The number of chip crackle with chip crackle rate shown in the table 1.
(example 2-64) (comparison example 1-19)
Repeat the processing step of example 1, but the composition of billon silk is changed into result shown in the table 1-4.By same test process it is tested, it the results are shown in Table 1-4.
(test result)
A) among example 1-39 and the 47-51, in the high-purity gold, added weight content and be at least a among the Co of 1-1000ppm and the Zn (first group element), the Mn of 1-1000ppm and the La of 1～400ppm, Y, Gd, Be, Ca, at least a among the Eu (second group element).Having obtained the high temperature defect rate is 0～5%, and (circle) sphericity is 0.92-0.99, and the vibration fracture rate is 0-10%, and chip crackle rate is 0% good test result.
B) to have added weight content in the high-purity gold be the Co of 1-1000ppm and the Mn of 1-1000ppm to example 40-46, having obtained the high temperature defect rate is 0～5%, (circle) sphericity is 0.95-0.98, and the vibration fracture rate is 0～10%, and chip crackle rate is 0% good test result.
C) example 47-59 has added first group element at least a that weight content is 1-1000ppm in the high-purity gold, and weight content is at least a in second group element of 1-400ppm, and weight content is the Pb of 0.01-2.0%, Pt, Cu, Ag, at least a among the Ni (the 3rd group element); Example 60-66 has added weight content in the high-purity gold be the Co of 1-1000ppm, weight content is at least a in the Mn of 1-1000ppm and second group element that weight content is 1-400ppm, two groups of samples have all obtained good test result, its high temperature defect rate is 0%, sphericity is 0.95-0.98, the vibration fracture rate is 0～10%, and chip crackle rate is 0%.
D) in mentioned component, if at least a in described second group element is one of three kinds of compositions of following 1-3, compare with the example 23 (the vibration fracture rate is 10%) of Ca in second group element that only adds 1-10ppm so, will obtain better test result, its vibration fracture rate is 0%.Thereby, at least a one of the following three kinds of compositions of preferably selecting in described second group element:
ⅰ) weight content is the La of 1-400ppm, Eu, Y, at least a among the Be;
ⅱ) weight content is the Ca of 10-400ppm; And
ⅲ) weight content is 5ppm or more Ca, and weight content is 5ppm or more La, Eu, and Y, at least a among the Be, wherein Ca and the described second group element La, Eu, Y, at least a total content is 10-400ppm among the Be.
E) comparison example 1-5 is at least a and Mn that only adds in the high-purity gold in first group element, and its high temperature defect rate is 63-82%, and the vibration fracture rate is 19-36%.By comparison, the effect of example 1-66 is desirable many.
F) comparison example 6 is that to add weight content in the high-purity gold be that Zn and the weight content of 1-1000ppm is the Mn of 1-1000ppm, and does not add any second group element, and its high temperature defect rate is 42%, and the vibration fracture rate is 21%.By comparison, the effect of example 1-66 is desirable many.
G) comparison example 7～9th, do not add any first group element in the high-purity gold, and its high temperature defect rate is 57-66%.By comparison, the effect of example 1-66 is desirable many.
H) comparison example 10-11 does not add Mn in the high-purity gold, and its high temperature defect rate is 69-72%.By comparison, the effect of example 1-66 is desirable many.
I) comparison example 12～13rd, add at least a second group element in the high-purity gold, and its high temperature defect rate is 100%.By comparison, the effect of example 1-66 is desirable many.
J) comparison example 14-17 adds weight content above at least a or Mn in first group element more than 1% in the high-purity gold, and its chip crackle rate is 51-63%.By comparison, the effect of example 1-66 is desirable many.
K) comparison example 18-19 adds weight content to surpass at least a in second group element of 1000ppm in the high-purity gold, and its sphericity is 51-63%.By comparison, the effect of example 1-66 is desirable many.
Table 1
| Example | Composition (ppm weight) | Test result | ||||||||||||
| Co | Zn | Mn | La | Y | Gd | Be | Ca | Eu | Au | High temperature defect rate % | (circle) sphericity | Vibration fracture rate % | Chip | |
| 1 | 1 | 100 | 100 | Surplus | 5 | 0.95 | 0 | 0 | ||||||
| 2 | 100 | 100 | 100 | Surplus | 0 | 0.96 | 0 | 0 | ||||||
| 3 | 1000 | 100 | 100 | Surplus | 0 | 0.96 | 0 | 0 | ||||||
| 4 | 100 | 1 | 100 | Surplus | 5 | 0.97 | 0 | 0 | ||||||
| 5 | 100 | 1000 | 100 | Surplus | 0 | 0.98 | 0 | 0 | ||||||
| 6 | 1 | 100 | 100 | Surplus | 5 | 0.96 | 0 | 0 | ||||||
| 7 | 100 | 100 | 100 | Surplus | 0 | 0.97 | 0 | 0 | ||||||
| 8 | 1000 | 100 | 100 | Surplus | 0 | 0.98 | 0 | 0 | ||||||
| 9 | 100 | 1 | 100 | Surplus | 5 | 0.97 | 0 | 0 | ||||||
| 10 | 100 | 1000 | 100 | Surplus | 0 | 0.98 | 0 | 0 | ||||||
| 11 | 100 | 100 | 100 | 100 | Surplus | 0 | 0.96 | 0 | 0 | |||||
| 12 | 100 | 100 | 1 | Surplus | 0 | 0.99 | 5 | 0 | ||||||
| 13 | 100 | 100 | 400 | Surplus | 0 | 0.97 | 0 | 0 | ||||||
| 14 | 100 | 100 | 1 | Surplus | 0 | 0.99 | 5 | 0 | ||||||
| 15 | 100 | 100 | 100 | Surplus | 0 | 0.96 | 0 | 0 | ||||||
| 16 | 100 | 100 | 400 | Surplus | 0 | 0.98 | 0 | 0 | ||||||
| 17 | 100 | 100 | 1 | Surplus | 0 | 0.99 | 5 | 0 | ||||||
| 18 | 100 | 100 | 100 | Surplus | 0 | 0.97 | 0 | 0 | ||||||
| 19 | 100 | 100 | 400 | Surplus | 0 | 0.96 | 0 | 0 | ||||||
Table 2
| Example | Composition (ppm weight) | Test result | ||||||||||||
| Co | Zn | Mn | La | Y | Gd | Be | Ca | Eu | Au | High temperature defect rate % | (circle) sphericity | Vibration fracture rate % | Chip fracture rate % | |
| 20 | 100 | 100 | 1 | Surplus | 0 | 0.99 | 5 | 0 | ||||||
| 21 | 100 | 100 | 100 | Surplus | 0 | 0.96 | 0 | 0 | ||||||
| 22 | 100 | 100 | 400 | Surplus | 0 | 0.95 | 0 | 0 | ||||||
| 23 | 100 | 100 | 1 | Surplus | 0 | 0.92 | 10 | 0 | ||||||
| 24 | 100 | 100 | 10 | Surplus | 0 | 0.95 | 0 | 0 | ||||||
| 25 | 100 | 100 | 100 | Surplus | 0 | 0.97 | 0 | 0 | ||||||
| 26 | 100 | 100 | 400 | Surplus | 0 | 0.98 | 0 | 0 | ||||||
| 27 | 100 | 100 | 1 | Surplus | 0 | 0.99 | 5 | 0 | ||||||
| 28 | 100 | 100 | 100 | Surplus | 0 | 0.98 | 0 | 0 | ||||||
| 29 | 100 | 100 | 400 | Surplus | 0 | 0.97 | 0 | 0 | ||||||
| 30 | 100 | 100 | 5 | 5 | Surplus | 0 | 0.99 | 0 | 0 | |||||
| 31 | 100 | 100 | 100 | 100 | Surplus | 0 | 0.95 | 0 | 0 | |||||
| 32 | 100 | 100 | 100 | 100 | 100 | Surplus | 0 | 0.95 | 0 | 0 | ||||
| 33 | 100 | 100 | 50 | 50 | 50 | 50 | 50 | 50 | Surplus | 0 | 0.96 | 0 | 0 | |
| 34 | 100 | 100 | 100 | Surplus | 0 | 0.98 | 0 | 0 | ||||||
| 35 | 100 | 100 | 100 | Surplus | 0 | 0.96 | 0 | 0 | ||||||
| 36 | 100 | 100 | 100 | Surplus | 0 | 0.96 | 0 | 0 | ||||||
| 37 | 100 | 100 | 100 | Surplus | 0 | 0.97 | 0 | 0 | ||||||
| 38 | 100 | 100 | 100 | Surplus | 0 | 0.98 | 0 | 0 | ||||||
| 39 | 100 | 100 | 100 | Surplus | 0 | 0.97 | 0 | 0 | ||||||
Table 3
| Example | Composition (ppm weight) | Composition (ppm weight) | Test result | ||||||||||||||||
| Co | Zn | Mn | La | Y | Gd | Be | Ca | Eu | Pd | Pt | Cu | Ag | Ni | Au | High temperature defect rate % | (circle) sphericity | Vibration fracture rate % | Chip fracture rate % | |
| 40 | 1 | 100 | Surplus | 5 | 0.99 | 10 | 0 | ||||||||||||
| 41 | 10 | 100 | Surplus | 0 | 0.98 | 10 | 0 | ||||||||||||
| 42 | 100 | 100 | Surplus | 0 | 0.98 | 10 | 0 | ||||||||||||
| 43 | 100 0 | 100 | Surplus | 0 | 0.96 | 10 | 0 | ||||||||||||
| 44 | 100 | 1 | Surplus | 5 | 0.98 | 10 | 0 | ||||||||||||
| 45 | 100 | 10 | Surplus | 0 | 0.98 | 10 | 0 | ||||||||||||
| 46 | 100 | 1000 | Surplus | 0 | 0.96 | 10 | 0 | ||||||||||||
| 47 | 10 | 100 | 100 | Surplus | 0 | 0.95 | 0 | 0 | |||||||||||
| 48 | 100 | 10 | 100 | Surplus | 0 | 0.95 | 0 | 0 | |||||||||||
| 49 | 10 | 100 | 100 | Surplus | 0 | 0.97 | 0 | 0 | |||||||||||
| 50 | 100 | 10 | 100 | Surplus | 0 | 0.97 | 0 | 0 | |||||||||||
| 51 | 50 | 50 | 10 | 20 | Surplus | 0 | 0.96 | 0 | 0 | ||||||||||
| 52 | 100 | 10 | 20 | .01 | Surplus | 0 | 0.98 | 0 | 0 | ||||||||||
| 53 | 100 | 10 | 20 | 0.1 | Surplus | 0 | 0.98 | 0 | 0 | ||||||||||
| 54 | 100 | 10 | 20 | 2.0 | Surplus | 0 | 0.97 | 0 | 0 | ||||||||||
| 55 | 100 | 10 | 20 | 0.1 | Surplus | 0 | 0.98 | 0 | 0 | ||||||||||
| 56 | 100 | 10 | 20 | 0.1 | Surplus | 0 | 0.97 | 0 | 0 | ||||||||||
| 57 | 100 | 10 | 20 | 0.1 | Surplus | 0 | 0.98 | 0 | 0 | ||||||||||
| 58 | 100 | 10 | 20 | 0.1 | Surplus | 0 | 0.97 | 0 | 0 | ||||||||||
| 59 | 100 | 10 | 20 | 0.1 | Surplus | 0 | 0.97 | 0 | 0 | ||||||||||
| 60 | 100 | 10 | .01 | Surplus | 0 | 0?98 | 10 | 0 | |||||||||||
| 61 | 100 | 10 | 0.1 | Surplus | 0 | 0.98 | 10 | 0 | |||||||||||
| 62 | 100 | 10 | 2.0 | Surplus | 0 | 0.97 | 10 | 0 | |||||||||||
| 63 | 100 | 10 | 0.1 | Surplus | 0 | 0.98 | 10 | 0 | |||||||||||
| 64 | 100 | 10 | 0.1 | Surplus | 0 | 0.97 | 10 | 0 | |||||||||||
| 65 | 100 | 10 | 0.1 | Surplus | 0 | 0.98 | 10 | 0 | |||||||||||
| 66 | 100 | 10 | 0.1 | Surplus | 0 | 0.98 | 10 | 0 | |||||||||||
Table 4
| Example | Composition (ppm weight) | Test result | ||||||||||
| Co | Zn | Mn | La | Ca | Be | Y | Au | High temperature defect rate % | (circle) sphericity | Vibration fracture rate % | Chip | |
| 1 | 100 | Surplus | 73 | 0.99 | 22 | 0 | ||||||
| 2 | 50 | Surplus | 82 | 0.99 | 19 | 0 | ||||||
| 3 | 500 | Surplus | 63 | 0.97 | 36 | 0 | ||||||
| 4 | 70 | Surplus | 77 | 0.98 | 33 | 0 | ||||||
| 5 | 500 | Surplus | 75 | 0.97 | 30 | 0 | ||||||
| 6 | 20 | 20 | Surplus | 42 | 0.98 | 21 | 0 | |||||
| 7 | 500 | 30 | Surplus | 57 | 0.96 | 0 | 0 | |||||
| 8 | 100 | 20 | Surplus | 64 | 0.98 | 0 | 0 | |||||
| 9 | 70 | 10 | 20 | Surplus | 66 | 0.97 | 0 | 0 | ||||
| 10 | 100 | 30 | Surplus | 69 | 0.97 | 0 | 0 | |||||
| 11 | 100 | 30 | Surplus | 72 | 0.98 | 0 | 0 | |||||
| 12 | 30 | Surplus | 100 | 0.96 | 0 | 0 | ||||||
| 13 | 30 | Surplus | 100 | 0.96 | 0 | 0 | ||||||
| 14 | 20000 | 100 | 30 | Surplus | 0 | 0.94 | 0 | 51 | ||||
| 15 | 20000 | 100 | 30 | Surplus | 0 | 0.93 | 0 | 58 | ||||
| 16 | 100 | 20000 | 30 | Surplus | 0 | 0.94 | 0 | 63 | ||||
| 17 | 100 | 20000 | 30 | Surplus | 0 | 0.93 | 0 | 57 | ||||
| 18 | 100 | 100 | 20000 | Surplus | 0 | 0.67 | 0 | 0 | ||||
| 19 | 100 | 100 | 20000 | Surplus | 0 | 0.62 | 0 | 0 | ||||
Claims (16)
1. the billon silk use in semiconductor element welding, be included in be added with in the high-purity gold weight content be from 1ppm to less than at least a the Co of 1000ppm and the Zn, weight content is the Mn of 1-1000ppm, reaching weight content is the La of 1-400ppm, Y, Gd, Be, Ca, at least a among the Eu.
2. the billon silk is used in semiconductor element welding according to claim 1, it is characterized in that described La, Y, and Gd, Be, Ca, at least a among the Eu is from La, Y, Gd, Be selects at least a among the Eu.
3. the billon silk is used in semiconductor element welding according to claim 1, it is characterized in that described La, Y, and Gd, Be, Ca, at least a among the Eu is Ca.
4. the billon silk is used in the described semiconductor element welding of claim 1, it is characterized in that described La, Y, Gd, Be, Ca, at least a including among the Eu: weight content is 5ppm or more Ca, and weight content is 5ppm or more La, Y, Gd, Be, at least a among the Eu, it is characterized in that Ca and described La, Y, Gd, Be, at least a weight content total amount is 10-400ppm among the Eu.
5. the billon silk is used in semiconductor element welding according to claim 1, it is characterized in that also further including the Pd that weight content is 0.01-2.0%, Pt, and Cu, Ag, at least a among the Ni.
6. the billon silk is used in a semiconductor element welding, and being included in and being added with weight content in the high-purity gold is the Mn of 1-1000ppm from 1ppm to Co and weight content less than 1000ppm.
7. the billon silk is used in semiconductor element welding according to claim 6, it is characterized in that also further including the Pd that weight content is 0.01-2.0%, Pt, and Cu, Ag, at least a among the Ni.
8. method that connects up between semiconductor element and outer lead may further comprise the steps:
Preparation one has the semiconductor element of electrode;
Prepare an outside lead;
Prepare semiconductor element welding billon silk, wherein said billon silk comprises following composition: it be included in be added with in the high-purity gold weight content for from 1ppm to less than at least a the Co of 1000ppm and the Zn, weight content is the Mn of 1-1000ppm, reaching weight content is the La of 1-400ppm, Y, Gd, Be, Ca, at least a among the Eu, be included in perhaps in the high-purity gold that to add weight content be the Mn of 1-1000ppm from 1ppm to Co and weight content less than 1000ppm;
The end of described semiconductor element weldering with the billon silk is soldered on the electrode of described semiconductor element;
The weldering of described semiconductor element is soldered on the described outer lead with billon silk a section away from welding ends, and in the welding section position or its vicinity described billon silk is cut off.
9. method according to claim 8 is characterized in that described La, Y, and Gd, Be, Ca, at least a among the Eu is from La, Y, Gd, Be selects at least a among the Eu.
10. method according to claim 8 is characterized in that described La, Y, and Gd, Be, Ca, at least a among the Eu is Ca.
11. method according to claim 8 is characterized in that described La, Y, Gd, Be, Ca, at least a including among the Eu: weight content is 5ppm or more Ca, and weight content is 5ppm or more La, Y, Gd, Be, at least a among the Eu, wherein Ca and described La, Y, Gd, Be, at least a weight content total amount is 10-400ppm among the Eu.
12. method according to claim 8 is characterized in that described billon silk also further includes the Pd that weight content is 0.01-2.0%, Pt, and Cu, Ag, at least a among the Ni.
13. a method that forms soldering tip on electrode may further comprise the steps:
Prepare electrode;
Prepare semiconductor element welding billon silk, wherein said billon silk comprises following composition, it be included in the high-purity gold add weight content for from 1ppm to less than at least a the Co of 1000ppm and the Zn, weight content is the Mn of 1-1000ppm, and weight content is the La of 1-400ppm, Y, Gd, Be, Ca, at least a among the Eu, be included in perhaps in the high-purity gold that to add weight content be the Mn of 1-1000ppm from 1ppm to Co and weight content less than 1000ppm;
On described electrode, form soldering tip with the billon silk with described semiconductor element welding.
14. the method for formation soldering tip according to claim 13, the step of wherein said formation soldering tip comprises: an end that heats described welding wire makes it to form a spheroid; Described spheroid is pressed onto on the electrode; When described spheroid is by hot pressing the described welding wire of drawing, make it to disconnect near hot pressing spheroid vicinity.
15. a semiconductor devices includes one and has the semiconductor element of claim 1 or 6 described any billon wire bonds being received the electrode on it.
16. semiconductor devices, include a semiconductor element, that has electrode and have the substrate of electrode and be welded in soldering tip between semiconductor element electrode and the underlayer electrode, wherein said soldering tip adopts claim 1 or 6 described billon silks to make.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP133549/98 | 1998-05-15 | ||
| JP13354998 | 1998-05-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1236691A true CN1236691A (en) | 1999-12-01 |
Family
ID=15107421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN99106623A Pending CN1236691A (en) | 1998-05-15 | 1999-05-14 | Bonding gold alloy wire and applications thereof |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR19990088305A (en) |
| CN (1) | CN1236691A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100487883C (en) * | 2004-09-30 | 2009-05-13 | 田中电子工业株式会社 | Au alloy bonding wire |
| CN103842529A (en) * | 2011-03-01 | 2014-06-04 | 田中电子工业株式会社 | Bonding wire of gold (Au) alloy |
| CN112621011A (en) * | 2020-12-10 | 2021-04-09 | 北京有色金属与稀土应用研究所 | High-strength lead-based alloy solder and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100945507B1 (en) * | 2007-10-30 | 2010-03-09 | 주식회사 하이닉스반도체 | Bonding wier and semiconductor package having the same |
-
1999
- 1999-05-14 CN CN99106623A patent/CN1236691A/en active Pending
- 1999-05-14 KR KR1019990017341A patent/KR19990088305A/en not_active Application Discontinuation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100487883C (en) * | 2004-09-30 | 2009-05-13 | 田中电子工业株式会社 | Au alloy bonding wire |
| CN103842529A (en) * | 2011-03-01 | 2014-06-04 | 田中电子工业株式会社 | Bonding wire of gold (Au) alloy |
| CN112621011A (en) * | 2020-12-10 | 2021-04-09 | 北京有色金属与稀土应用研究所 | High-strength lead-based alloy solder and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990088305A (en) | 1999-12-27 |
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