CN102194796B - 一种晶圆检测结构及其制作方法、晶圆检测方法 - Google Patents
一种晶圆检测结构及其制作方法、晶圆检测方法 Download PDFInfo
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- CN102194796B CN102194796B CN 201010129223 CN201010129223A CN102194796B CN 102194796 B CN102194796 B CN 102194796B CN 201010129223 CN201010129223 CN 201010129223 CN 201010129223 A CN201010129223 A CN 201010129223A CN 102194796 B CN102194796 B CN 102194796B
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- 238000001514 detection method Methods 0.000 title claims abstract description 110
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 71
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 69
- 239000001301 oxygen Substances 0.000 claims abstract description 69
- 229910052751 metal Inorganic materials 0.000 claims abstract description 62
- 239000002184 metal Substances 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 22
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- 238000005520 cutting process Methods 0.000 claims abstract description 9
- 229920005591 polysilicon Polymers 0.000 claims description 69
- 229910052755 nonmetal Inorganic materials 0.000 claims description 8
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- 230000005611 electricity Effects 0.000 abstract 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 210000003027 ear inner Anatomy 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
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- 230000002950 deficient Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical compound [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 239000012467 final product Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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CN 201010129223 CN102194796B (zh) | 2010-03-18 | 2010-03-18 | 一种晶圆检测结构及其制作方法、晶圆检测方法 |
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CN 201010129223 CN102194796B (zh) | 2010-03-18 | 2010-03-18 | 一种晶圆检测结构及其制作方法、晶圆检测方法 |
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CN102194796A CN102194796A (zh) | 2011-09-21 |
CN102194796B true CN102194796B (zh) | 2012-12-05 |
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Families Citing this family (2)
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CN108172526B (zh) * | 2017-12-20 | 2020-04-28 | 上海华力微电子有限公司 | 一种检测多晶硅是否出现短路的检测方法 |
CN114818604B (zh) * | 2022-06-29 | 2022-10-11 | 飞腾信息技术有限公司 | 一种用于修正数字版图上短路缺陷的方法以及装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US8519512B2 (en) * | 2006-09-22 | 2013-08-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Test line placement to improve die sawing quality |
US7098049B2 (en) * | 2003-11-18 | 2006-08-29 | Nanya Technology Corp. | Shallow trench isolation void detecting method and structure for the same |
CN100353515C (zh) * | 2003-12-31 | 2007-12-05 | 中芯国际集成电路制造(上海)有限公司 | 晶片金属互连线可靠性在线测试方法 |
CN100477175C (zh) * | 2005-10-11 | 2009-04-08 | 联华电子股份有限公司 | 半导体结构及其制作方法 |
CN100514628C (zh) * | 2006-10-19 | 2009-07-15 | 联华电子股份有限公司 | 射频测试键结构 |
CN101226930B (zh) * | 2007-01-15 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | 具有层或结构识别标记的半导体结构及其制作方法和应用 |
CN101295624A (zh) * | 2007-04-24 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | 缺陷的检测结构及其制作方法、检测方法 |
US7679384B2 (en) * | 2007-06-08 | 2010-03-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Parametric testline with increased test pattern areas |
CN101350342A (zh) * | 2007-07-19 | 2009-01-21 | 联华电子股份有限公司 | 测试用集成电路结构 |
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Effective date of registration: 20220720 Address after: 518116 founder Microelectronics Industrial Park, No. 5, Baolong seventh Road, Baolong Industrial City, Longgang District, Shenzhen, Guangdong Province Patentee after: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. Address before: 100871, Beijing, Haidian District Cheng Fu Road 298, founder building, 9 floor Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. |
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Effective date of registration: 20231024 Address after: Building 2, Building A, Shenzhen Bay Innovation Technology Center, No. 3156 Keyuan South Road, Gaoxin District, Yuehai Street, Nanshan District, Shenzhen City, Guangdong Province, 518000, 3901 Patentee after: Shenzhen Major Industry Investment Group Co.,Ltd. Address before: 518116 founder Microelectronics Industrial Park, No. 5, Baolong seventh Road, Baolong Industrial City, Longgang District, Shenzhen, Guangdong Province Patentee before: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. |