CN102194796A - 一种晶圆检测结构及其制作方法、晶圆检测方法 - Google Patents
一种晶圆检测结构及其制作方法、晶圆检测方法 Download PDFInfo
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- CN102194796A CN102194796A CN 201010129223 CN201010129223A CN102194796A CN 102194796 A CN102194796 A CN 102194796A CN 201010129223 CN201010129223 CN 201010129223 CN 201010129223 A CN201010129223 A CN 201010129223A CN 102194796 A CN102194796 A CN 102194796A
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- 238000001514 detection method Methods 0.000 title claims abstract description 110
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 61
- 239000001301 oxygen Substances 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 22
- 230000007547 defect Effects 0.000 claims abstract description 10
- 238000005520 cutting process Methods 0.000 claims abstract description 9
- 229920005591 polysilicon Polymers 0.000 claims description 64
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 229910052755 nonmetal Inorganic materials 0.000 claims description 8
- 150000002843 nonmetals Chemical class 0.000 claims description 8
- 230000005611 electricity Effects 0.000 abstract 2
- 238000012545 processing Methods 0.000 description 21
- 238000012360 testing method Methods 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 210000003027 ear inner Anatomy 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical compound [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
Description
区间 | 场氧层(FieldOxidation) | 多晶硅层 |
区间1 | AA | Ploy |
区间2 | AA | Poly-pitch |
区间3 | AA | Non-ploy |
区间4 | AA pitch | Ploy |
区间5 | AA pitch | Poly-pitch |
区间6 | AA pitch | Non-ploy |
区间7 | Non-AA | Ploy |
区间8 | Non-AA | Poly-pitch |
区间9 | Non-AA | Non-ploy |
Claims (13)
Priority Applications (1)
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CN 201010129223 CN102194796B (zh) | 2010-03-18 | 2010-03-18 | 一种晶圆检测结构及其制作方法、晶圆检测方法 |
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CN 201010129223 CN102194796B (zh) | 2010-03-18 | 2010-03-18 | 一种晶圆检测结构及其制作方法、晶圆检测方法 |
Publications (2)
Publication Number | Publication Date |
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CN102194796A true CN102194796A (zh) | 2011-09-21 |
CN102194796B CN102194796B (zh) | 2012-12-05 |
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CN 201010129223 Active CN102194796B (zh) | 2010-03-18 | 2010-03-18 | 一种晶圆检测结构及其制作方法、晶圆检测方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108172526A (zh) * | 2017-12-20 | 2018-06-15 | 上海华力微电子有限公司 | 一种检测多晶硅是否出现短路的检测方法 |
CN114818604A (zh) * | 2022-06-29 | 2022-07-29 | 飞腾信息技术有限公司 | 一种用于修正数字版图上短路缺陷的方法以及装置 |
Citations (9)
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CN1635619A (zh) * | 2003-12-31 | 2005-07-06 | 中芯国际集成电路制造(上海)有限公司 | 晶片金属互连线可靠性在线测试方法 |
US20050247930A1 (en) * | 2003-11-18 | 2005-11-10 | Nanya Technology Corp. | Shallow trench isolation void detecting method and structure for the same |
CN1949485A (zh) * | 2005-10-11 | 2007-04-18 | 联华电子股份有限公司 | 半导体结构及其制作方法 |
CN101150094A (zh) * | 2006-09-22 | 2008-03-26 | 台湾积体电路制造股份有限公司 | 半导体晶圆结构 |
CN101165889A (zh) * | 2006-10-19 | 2008-04-23 | 联华电子股份有限公司 | 射频测试键结构 |
CN101226930A (zh) * | 2007-01-15 | 2008-07-23 | 中芯国际集成电路制造(上海)有限公司 | 具有层或结构识别标记的半导体结构及其制作方法和应用 |
CN101295624A (zh) * | 2007-04-24 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | 缺陷的检测结构及其制作方法、检测方法 |
CN101320725A (zh) * | 2007-06-08 | 2008-12-10 | 台湾积体电路制造股份有限公司 | 具有增加测试图案区域的参数测试线 |
CN101350342A (zh) * | 2007-07-19 | 2009-01-21 | 联华电子股份有限公司 | 测试用集成电路结构 |
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2010
- 2010-03-18 CN CN 201010129223 patent/CN102194796B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050247930A1 (en) * | 2003-11-18 | 2005-11-10 | Nanya Technology Corp. | Shallow trench isolation void detecting method and structure for the same |
CN1635619A (zh) * | 2003-12-31 | 2005-07-06 | 中芯国际集成电路制造(上海)有限公司 | 晶片金属互连线可靠性在线测试方法 |
CN1949485A (zh) * | 2005-10-11 | 2007-04-18 | 联华电子股份有限公司 | 半导体结构及其制作方法 |
CN101150094A (zh) * | 2006-09-22 | 2008-03-26 | 台湾积体电路制造股份有限公司 | 半导体晶圆结构 |
CN101165889A (zh) * | 2006-10-19 | 2008-04-23 | 联华电子股份有限公司 | 射频测试键结构 |
CN101226930A (zh) * | 2007-01-15 | 2008-07-23 | 中芯国际集成电路制造(上海)有限公司 | 具有层或结构识别标记的半导体结构及其制作方法和应用 |
CN101295624A (zh) * | 2007-04-24 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | 缺陷的检测结构及其制作方法、检测方法 |
CN101320725A (zh) * | 2007-06-08 | 2008-12-10 | 台湾积体电路制造股份有限公司 | 具有增加测试图案区域的参数测试线 |
CN101350342A (zh) * | 2007-07-19 | 2009-01-21 | 联华电子股份有限公司 | 测试用集成电路结构 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108172526A (zh) * | 2017-12-20 | 2018-06-15 | 上海华力微电子有限公司 | 一种检测多晶硅是否出现短路的检测方法 |
CN108172526B (zh) * | 2017-12-20 | 2020-04-28 | 上海华力微电子有限公司 | 一种检测多晶硅是否出现短路的检测方法 |
CN114818604A (zh) * | 2022-06-29 | 2022-07-29 | 飞腾信息技术有限公司 | 一种用于修正数字版图上短路缺陷的方法以及装置 |
CN114818604B (zh) * | 2022-06-29 | 2022-10-11 | 飞腾信息技术有限公司 | 一种用于修正数字版图上短路缺陷的方法以及装置 |
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CN102194796B (zh) | 2012-12-05 |
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Effective date of registration: 20220720 Address after: 518116 founder Microelectronics Industrial Park, No. 5, Baolong seventh Road, Baolong Industrial City, Longgang District, Shenzhen, Guangdong Province Patentee after: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. Address before: 100871, Beijing, Haidian District Cheng Fu Road 298, founder building, 9 floor Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. |
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Effective date of registration: 20231024 Address after: Building 2, Building A, Shenzhen Bay Innovation Technology Center, No. 3156 Keyuan South Road, Gaoxin District, Yuehai Street, Nanshan District, Shenzhen City, Guangdong Province, 518000, 3901 Patentee after: Shenzhen Major Industry Investment Group Co.,Ltd. Address before: 518116 founder Microelectronics Industrial Park, No. 5, Baolong seventh Road, Baolong Industrial City, Longgang District, Shenzhen, Guangdong Province Patentee before: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. |