CN102190961A - 抛光用组合物以及使用该抛光用组合物的抛光方法 - Google Patents

抛光用组合物以及使用该抛光用组合物的抛光方法 Download PDF

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Publication number
CN102190961A
CN102190961A CN2011100475168A CN201110047516A CN102190961A CN 102190961 A CN102190961 A CN 102190961A CN 2011100475168 A CN2011100475168 A CN 2011100475168A CN 201110047516 A CN201110047516 A CN 201110047516A CN 102190961 A CN102190961 A CN 102190961A
Authority
CN
China
Prior art keywords
polishing
polishing composition
semiconductor substrate
active agent
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011100475168A
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English (en)
Chinese (zh)
Inventor
高桥修平
森永均
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of CN102190961A publication Critical patent/CN102190961A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2011100475168A 2010-03-02 2011-02-28 抛光用组合物以及使用该抛光用组合物的抛光方法 Pending CN102190961A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-045676 2010-03-02
JP2010045676A JP5492603B2 (ja) 2010-03-02 2010-03-02 研磨用組成物及びそれを用いた研磨方法

Publications (1)

Publication Number Publication Date
CN102190961A true CN102190961A (zh) 2011-09-21

Family

ID=43859479

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011100475168A Pending CN102190961A (zh) 2010-03-02 2011-02-28 抛光用组合物以及使用该抛光用组合物的抛光方法

Country Status (8)

Country Link
US (1) US20110217845A1 (https=)
JP (1) JP5492603B2 (https=)
KR (1) KR20110099627A (https=)
CN (1) CN102190961A (https=)
DE (1) DE102011011911A1 (https=)
GB (1) GB2478396A (https=)
SG (1) SG173972A1 (https=)
TW (1) TW201137095A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014059744A1 (zh) * 2012-10-17 2014-04-24 安集微电子（上海）有限公司 一种碱性化学机械抛光液
CN108713242A (zh) * 2016-03-01 2018-10-26 福吉米株式会社 硅基板的研磨方法及研磨用组合物套组
CN113122143A (zh) * 2019-12-31 2021-07-16 安集微电子（上海）有限公司 一种化学机械抛光液及其在铜抛光中的应用

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103328599B (zh) * 2011-01-21 2016-01-13 嘉柏微电子材料股份公司 具有改善的功率谱密度性能的硅抛光组合物
JP6013828B2 (ja) * 2012-08-10 2016-10-25 株式会社フジミインコーポレーテッド 研磨用組成物、当該研磨用組成物の製造方法、及び当該研磨用組成物を用いた半導体基板の製造方法
JP2014038906A (ja) * 2012-08-13 2014-02-27 Fujimi Inc 研磨用組成物、当該研磨用組成物の製造方法、及び当該研磨用組成物を用いた半導体基板の製造方法
DE102013218880A1 (de) 2012-11-20 2014-05-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe, umfassend das gleichzeitige Polieren einer Vorderseite und einer Rückseite einer Substratscheibe
EP2957613B1 (en) * 2013-02-13 2020-11-18 Fujimi Incorporated Polishing composition, method for producing polishing composition and method for producing polished article
JP6306383B2 (ja) * 2014-03-17 2018-04-04 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
JP6891107B2 (ja) * 2017-12-27 2021-06-18 ニッタ・デュポン株式会社 研磨用組成物
JP7166819B2 (ja) 2018-07-13 2022-11-08 Ｃｍｃマテリアルズ株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法

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CN1635940A (zh) * 2002-02-21 2005-07-06 Cmp罗姆和哈斯电子材料控股公司 抛光组合物
US20060030503A1 (en) * 2004-08-06 2006-02-09 Gaku Minamihaba Slurry for CMP, polishing method and method of manufacturing semiconductor device

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US4588421A (en) * 1984-10-15 1986-05-13 Nalco Chemical Company Aqueous silica compositions for polishing silicon wafers
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JP3810172B2 (ja) 1997-03-05 2006-08-16 株式会社Ａｄｅｋａ シリコンウエーハ用研磨助剤
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JP2001110760A (ja) 1999-10-04 2001-04-20 Asahi Denka Kogyo Kk シリコンウェハー用研磨助剤
US6340602B1 (en) * 1999-12-10 2002-01-22 Sensys Instruments Method of measuring meso-scale structures on wafers
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JP3440419B2 (ja) * 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
JP4593064B2 (ja) * 2002-09-30 2010-12-08 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP2004128069A (ja) * 2002-09-30 2004-04-22 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
WO2004042812A1 (ja) * 2002-11-08 2004-05-21 Fujimi Incorporated 研磨用組成物及びリンス用組成物
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JP2008004621A (ja) * 2006-06-20 2008-01-10 Toshiba Corp Ｃｕ膜ＣＭＰ用スラリー、研磨方法および半導体装置の製造方法
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
US20080135520A1 (en) * 2006-12-12 2008-06-12 Tao Sun Chemical composition for chemical mechanical planarization
JP5444625B2 (ja) * 2008-03-05 2014-03-19 日立化成株式会社 Ｃｍｐ研磨液、基板の研磨方法及び電子部品
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CN1635940A (zh) * 2002-02-21 2005-07-06 Cmp罗姆和哈斯电子材料控股公司 抛光组合物
US20060030503A1 (en) * 2004-08-06 2006-02-09 Gaku Minamihaba Slurry for CMP, polishing method and method of manufacturing semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014059744A1 (zh) * 2012-10-17 2014-04-24 安集微电子（上海）有限公司 一种碱性化学机械抛光液
CN103773244A (zh) * 2012-10-17 2014-05-07 安集微电子（上海）有限公司 一种碱性化学机械抛光液
CN103773244B (zh) * 2012-10-17 2017-08-11 安集微电子（上海）有限公司 一种碱性化学机械抛光液
CN108713242A (zh) * 2016-03-01 2018-10-26 福吉米株式会社 硅基板的研磨方法及研磨用组合物套组
US11897081B2 (en) 2016-03-01 2024-02-13 Fujimi Incorporated Method for polishing silicon substrate and polishing composition set
CN113122143A (zh) * 2019-12-31 2021-07-16 安集微电子（上海）有限公司 一种化学机械抛光液及其在铜抛光中的应用
CN113122143B (zh) * 2019-12-31 2024-03-08 安集微电子（上海）有限公司 一种化学机械抛光液及其在铜抛光中的应用

Also Published As

Publication number Publication date
JP2011181765A (ja) 2011-09-15
SG173972A1 (en) 2011-09-29
TW201137095A (en) 2011-11-01
JP5492603B2 (ja) 2014-05-14
GB2478396A (en) 2011-09-07
GB201102674D0 (en) 2011-03-30
KR20110099627A (ko) 2011-09-08
US20110217845A1 (en) 2011-09-08
DE102011011911A1 (de) 2011-12-01

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SE01 Entry into force of request for substantive examination
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WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20110921