SG173972A1 - Polishing composition and polishing method using the same - Google Patents

Polishing composition and polishing method using the same Download PDF

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Publication number
SG173972A1
SG173972A1 SG2011011855A SG2011011855A SG173972A1 SG 173972 A1 SG173972 A1 SG 173972A1 SG 2011011855 A SG2011011855 A SG 2011011855A SG 2011011855 A SG2011011855 A SG 2011011855A SG 173972 A1 SG173972 A1 SG 173972A1
Authority
SG
Singapore
Prior art keywords
polishing composition
composition according
less
polishing
active agent
Prior art date
Application number
SG2011011855A
Other languages
English (en)
Inventor
Shuhei Takahashi
Hitoshi Morinaga
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG173972A1 publication Critical patent/SG173972A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG2011011855A 2010-03-02 2011-02-18 Polishing composition and polishing method using the same SG173972A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010045676A JP5492603B2 (ja) 2010-03-02 2010-03-02 研磨用組成物及びそれを用いた研磨方法

Publications (1)

Publication Number Publication Date
SG173972A1 true SG173972A1 (en) 2011-09-29

Family

ID=43859479

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2011011855A SG173972A1 (en) 2010-03-02 2011-02-18 Polishing composition and polishing method using the same

Country Status (8)

Country Link
US (1) US20110217845A1 (https=)
JP (1) JP5492603B2 (https=)
KR (1) KR20110099627A (https=)
CN (1) CN102190961A (https=)
DE (1) DE102011011911A1 (https=)
GB (1) GB2478396A (https=)
SG (1) SG173972A1 (https=)
TW (1) TW201137095A (https=)

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* Cited by examiner, † Cited by third party
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US9425037B2 (en) * 2011-01-21 2016-08-23 Cabot Microelectronics Corporation Silicon polishing compositions with improved PSD performance
JP6013828B2 (ja) * 2012-08-10 2016-10-25 株式会社フジミインコーポレーテッド 研磨用組成物、当該研磨用組成物の製造方法、及び当該研磨用組成物を用いた半導体基板の製造方法
JP2014038906A (ja) * 2012-08-13 2014-02-27 Fujimi Inc 研磨用組成物、当該研磨用組成物の製造方法、及び当該研磨用組成物を用いた半導体基板の製造方法
CN103773244B (zh) * 2012-10-17 2017-08-11 安集微电子（上海）有限公司 一种碱性化学机械抛光液
DE102013218880A1 (de) 2012-11-20 2014-05-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe, umfassend das gleichzeitige Polieren einer Vorderseite und einer Rückseite einer Substratscheibe
EP2957613B1 (en) * 2013-02-13 2020-11-18 Fujimi Incorporated Polishing composition, method for producing polishing composition and method for producing polished article
JP6306383B2 (ja) * 2014-03-17 2018-04-04 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
CN108713242A (zh) * 2016-03-01 2018-10-26 福吉米株式会社 硅基板的研磨方法及研磨用组合物套组
JP6891107B2 (ja) * 2017-12-27 2021-06-18 ニッタ・デュポン株式会社 研磨用組成物
JP7166819B2 (ja) 2018-07-13 2022-11-08 Ｃｍｃマテリアルズ株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法
CN113122143B (zh) * 2019-12-31 2024-03-08 安集微电子（上海）有限公司 一种化学机械抛光液及其在铜抛光中的应用

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US4462188A (en) * 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
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US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
JPH04212861A (ja) 1990-12-06 1992-08-04 Mitsubishi Heavy Ind Ltd インキ膜厚・含水率計測装置
JP3810172B2 (ja) 1997-03-05 2006-08-16 株式会社Ａｄｅｋａ シリコンウエーハ用研磨助剤
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US6340602B1 (en) * 1999-12-10 2002-01-22 Sensys Instruments Method of measuring meso-scale structures on wafers
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JP3440419B2 (ja) * 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
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JP2005209800A (ja) * 2004-01-21 2005-08-04 Fujitsu Ltd 半導体装置の製造方法
KR100795364B1 (ko) * 2004-02-10 2008-01-17 삼성전자주식회사 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법
JP4012180B2 (ja) * 2004-08-06 2007-11-21 株式会社東芝 Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
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US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
US20080135520A1 (en) * 2006-12-12 2008-06-12 Tao Sun Chemical composition for chemical mechanical planarization
JP5444625B2 (ja) * 2008-03-05 2014-03-19 日立化成株式会社 Ｃｍｐ研磨液、基板の研磨方法及び電子部品
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates

Also Published As

Publication number Publication date
US20110217845A1 (en) 2011-09-08
DE102011011911A1 (de) 2011-12-01
CN102190961A (zh) 2011-09-21
GB201102674D0 (en) 2011-03-30
JP5492603B2 (ja) 2014-05-14
JP2011181765A (ja) 2011-09-15
TW201137095A (en) 2011-11-01
GB2478396A (en) 2011-09-07
KR20110099627A (ko) 2011-09-08

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