CN102187735B - 发光元件 - Google Patents

发光元件 Download PDF

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Publication number
CN102187735B
CN102187735B CN200980141128.7A CN200980141128A CN102187735B CN 102187735 B CN102187735 B CN 102187735B CN 200980141128 A CN200980141128 A CN 200980141128A CN 102187735 B CN102187735 B CN 102187735B
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CN
China
Prior art keywords
light
layer
scattering
emitting element
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200980141128.7A
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English (en)
Chinese (zh)
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CN102187735A (zh
Inventor
纳谷昌之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UDC Ireland Ltd
Original Assignee
BASF SE
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE, Fujifilm Corp filed Critical BASF SE
Publication of CN102187735A publication Critical patent/CN102187735A/zh
Application granted granted Critical
Publication of CN102187735B publication Critical patent/CN102187735B/zh
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/917—Electroluminescent

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Optical Elements Other Than Lenses (AREA)
CN200980141128.7A 2008-10-17 2009-10-15 发光元件 Active CN102187735B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-269011 2008-10-17
JP2008269011A JP5530087B2 (ja) 2008-10-17 2008-10-17 発光素子
PCT/JP2009/068151 WO2010044489A1 (en) 2008-10-17 2009-10-15 Light emitting element

Publications (2)

Publication Number Publication Date
CN102187735A CN102187735A (zh) 2011-09-14
CN102187735B true CN102187735B (zh) 2014-09-03

Family

ID=42106648

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980141128.7A Active CN102187735B (zh) 2008-10-17 2009-10-15 发光元件

Country Status (6)

Country Link
US (1) US9887388B2 (enExample)
EP (1) EP2371182B1 (enExample)
JP (1) JP5530087B2 (enExample)
KR (1) KR101641747B1 (enExample)
CN (1) CN102187735B (enExample)
WO (1) WO2010044489A1 (enExample)

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EP4557917A3 (en) * 2011-09-16 2025-08-06 Seoul Viosys Co., Ltd. Light emitting diode and method for manufacturing same
US9419249B2 (en) 2012-04-13 2016-08-16 Asahi Kasei E-Materials Corporation Light extraction product for semiconductor light emitting device and light emitting device
JPWO2014034308A1 (ja) * 2012-08-27 2016-08-08 株式会社日立製作所 有機発光素子及び有機発光素子を用いた有機発光光源装置
WO2014065084A1 (ja) * 2012-10-26 2014-05-01 コニカミノルタ株式会社 電界発光素子およびその電界発光素子を用いた照明装置
KR101878755B1 (ko) * 2012-11-20 2018-07-16 삼성전자주식회사 광 이용 효율이 향상된 디스플레이 패널, 상기 디스플레이 패널을 포함하는 디스플레이 장치, 및 상기 디스플레이 패널의 제조 방법
WO2014097383A1 (ja) * 2012-12-18 2014-06-26 パイオニア株式会社 発光装置および発光装置の製造方法
US9209230B2 (en) * 2012-12-21 2015-12-08 Samsung Electronics Co., Ltd Optical films for reducing color shift and organic light-emitting display apparatuses employing the same
CN103325900B (zh) * 2013-05-22 2015-11-11 中国科学院半导体研究所 表面等离激元增强GaN基纳米柱LED及制备方法
KR102067159B1 (ko) * 2013-05-24 2020-01-16 삼성전자주식회사 색 변화 저감용 광학 필름 및 이를 채용한 유기발광 표시장치
KR101616918B1 (ko) 2013-05-31 2016-04-29 제일모직주식회사 색 변화 저감용 광학 필름 및 이를 채용한 유기 발광 표시 장치
JP6198120B2 (ja) * 2013-07-19 2017-09-20 パナソニックＩｐマネジメント株式会社 発光モジュール及びそれを用いた照明装置
KR102099781B1 (ko) * 2013-10-15 2020-04-10 삼성전자주식회사 색 변화 저감용 광학 필름 및 이를 채용한 유기 발광 표시 장치
KR102120808B1 (ko) * 2013-10-15 2020-06-09 삼성전자주식회사 색 변화 저감용 광학 필름 및 이를 채용한 유기 발광 표시 장치
US9761842B2 (en) * 2014-12-19 2017-09-12 The Regents Of The University Of Michigan Enhancing light extraction of organic light emitting diodes via nanoscale texturing of electrode surfaces
KR101642120B1 (ko) 2014-12-24 2016-07-22 코닝정밀소재 주식회사 유기발광소자용 광추출 기판 제조방법, 유기발광소자용 광추출 기판 및 이를 포함하는 유기발광소자
CN104701350B (zh) * 2015-03-03 2017-03-01 京东方科技集团股份有限公司 电极及其制作方法、阵列基板及其制作方法
CN106711347A (zh) * 2016-12-28 2017-05-24 武汉华星光电技术有限公司 一种oled器件及其基板
JP7004613B2 (ja) * 2018-06-27 2022-01-21 住友化学株式会社 有機エレクトロルミネッセンス素子
KR102640404B1 (ko) * 2018-10-18 2024-02-26 삼성디스플레이 주식회사 표시장치 및 그 표시장치의 제조방법
KR102800123B1 (ko) * 2019-02-01 2025-04-24 삼성디스플레이 주식회사 표시장치
JP7428144B2 (ja) 2019-02-08 2024-02-06 ソニーグループ株式会社 発光素子及び表示装置
CN111312795B (zh) * 2020-04-02 2022-10-04 武汉华星光电半导体显示技术有限公司 显示装置、显示面板及其制作方法
CN114038957A (zh) * 2021-05-18 2022-02-11 重庆康佳光电技术研究院有限公司 一种发光芯片外延结构及其制作方法和发光芯片

Citations (1)

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CN1665361A (zh) * 2004-03-03 2005-09-07 株式会社日立显示器 发光元件、发光型显示装置和照明装置

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DE19947030A1 (de) * 1999-09-30 2001-04-19 Osram Opto Semiconductors Gmbh Oberflächenstrukturierte Lichtemissionsdiode mit verbesserter Stromeinkopplung
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KR100999974B1 (ko) 2003-03-12 2010-12-13 미쓰비시 가가꾸 가부시키가이샤 일렉트로루미네센스 소자
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JP2006085985A (ja) * 2004-09-15 2006-03-30 Toshiba Matsushita Display Technology Co Ltd 有機ｅｌ表示装置
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JP2006236748A (ja) 2005-02-24 2006-09-07 Konica Minolta Holdings Inc 有機電界発光装置
KR100669142B1 (ko) * 2005-04-20 2007-01-15 (주)더리즈 발광 소자와 이의 제조 방법
US7521727B2 (en) * 2006-04-26 2009-04-21 Rohm And Haas Company Light emitting device having improved light extraction efficiency and method of making same
TWI462324B (zh) * 2007-05-18 2014-11-21 Delta Electronics Inc 發光二極體裝置及其製造方法

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Also Published As

Publication number Publication date
WO2010044489A1 (en) 2010-04-22
CN102187735A (zh) 2011-09-14
EP2371182A1 (en) 2011-10-05
JP2010097873A (ja) 2010-04-30
US20110198654A1 (en) 2011-08-18
JP5530087B2 (ja) 2014-06-25
EP2371182A4 (en) 2013-03-06
KR20110084198A (ko) 2011-07-21
KR101641747B1 (ko) 2016-07-21
EP2371182B1 (en) 2016-07-06
US9887388B2 (en) 2018-02-06

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Effective date: 20121228

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Applicant after: UDC?IRELAND?LIMITED

Address before: Tokyo, Japan

Applicant before: Fuji Film Corp.

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GR01 Patent grant