CN102169845B - Multi-layer mixed synchronization bonding structure and method for three-dimensional packaging - Google Patents

Multi-layer mixed synchronization bonding structure and method for three-dimensional packaging Download PDF

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Publication number
CN102169845B
CN102169845B CN2011100426439A CN201110042643A CN102169845B CN 102169845 B CN102169845 B CN 102169845B CN 2011100426439 A CN2011100426439 A CN 2011100426439A CN 201110042643 A CN201110042643 A CN 201110042643A CN 102169845 B CN102169845 B CN 102169845B
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bonding
mixed
substrate
multilayer
synchronous
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CN102169845A (en
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于大全
王惠娟
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National Center for Advanced Packaging Co Ltd
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Institute of Microelectronics of CAS
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Priority to CN2011100426439A priority Critical patent/CN102169845B/en
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Priority to PCT/CN2012/071116 priority patent/WO2012113297A1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
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    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Abstract

The invention relates to a multi-layer mixed synchronization bonding structure and a method for three-dimensional packaging. The method comprises the following steps of: forming a hard metal conical array on a surface of a metallic pad of a substrate to be mixed and bonded; forming a soft metal layer on the surface of the metallic pad of the other substrate to be mixed and bonded; forming dielectric adhesion layers on surfaces of non-metallic pads of the two substrates to be mixed and bonded; aligning the hard metal conical array with the soft metal layer, heating and pressurizing to make the hard metal conical array inserted into the soft metal layer, and combining the dielectric adhesion layers with each other to form a mixed pre-bonding structure; and then heating, forming an intermetallic compound in the hard metal conical array which is inserted into the soft metal layer, and solidifying and combining the dielectric adhesion layers. Compared with the conventional bonding method, the method provided by the invention has the advantages that: yield is high; bonding time is saved; cost is reduced; and the reliability of a product is improved at the same time.

Description

A kind of multilayer for three-dimension packaging is mixed synchronous bonding structure and method
Technical field
The present invention relates to a kind of multilayer for three-dimension packaging and mix synchronous bonding structure and method, belong to the microelectronic packaging technology field.
Background technology
Along with people to the requirement of the electronic product development to directions such as miniaturization, multi-functional, environment-friendly types, people make great efforts to seek to do electronic system more little, integrated level is more and more higher, function is done more and more, and is more and more stronger.Many new technologies, new material and new design have been produced thus, for example technology such as three-dimensional stacked encapsulation is exactly typical case's representative of these technology, this structure can be directly be stacked up a plurality of bare chips or the substrate mode by bonding, be implemented in the metal interconnection structure on the three-dimensional, reduce interconnected distance greatly, improve transmission speed, thereby realize integrated on three-dimensional structure of a system or certain function.And wherein bonding techniques is to realize that three-dimensional stacked encapsulating structure than essential, also is technology emphasis and the difficult point of most critical, and bonding method commonly used has direct oxidation thing bonding, and metal bonding such as copper copper bonding also have bonding such as the BCB of special organic polymer.Hybrid bonded between the different materials also arranged simultaneously, and as the hybrid bonded method of polymer and metal etc., these methods all are by under high temperature and the high pressure condition usually, in layer bonding.So all there are some following problems in these traditional bonding methods:
1) condition of bonding as temperature and pressure, can influence reliability and the productive rate of structure itself to the influence of structure itself to a certain extent; 2) because piling up of multilayer need in layer be removed bonding, bonding next time will inevitably impact the last time, as bonding precision and bond strength etc. certain reducing arranged, just repeatedly bonding all can have reducing to a certain degree than the intensity of the precision of word bonding and combination; 3) in addition owing to there is a time of waiting for intensification and cooling in the bonding process, this will certainly influence its whole bonding speed and output for the repeatedly bonding structure that needs volume production, thereby increases its cost greatly.
Because this traditional method complexity, there are a lot of difficulties, rate of finished products and the reliability of product caused great influence.Various new technologies, material and bonding method also progressively are suggested and discuss, for example adopt the hybrid bonded adhesion that adds strong bonding, hybrid bonded generally referring to adopts metal material and dielectric adhesion layer to mix to come bonding simultaneously in the substrate upper and lower surface for the treatment of bonding, hybrid bonded employing commonly used different as BCB, SU-8, these several polymeric materials such as AL-polymer and PI are used as the dielectric adhesion layer when hybrid bonded, after bonding, metal adopts thermocompression bonding or eutectic, adhesion layer is then by together settable cementitious after the hot pressing, thus the adhesion of raising bonding.Adopt special bonding structure to reduce the various low-temperature bonding methods of bonding temperature, as Hitachi Ltd the controllable bonding method of a kind of low temperature that the shape by design soldered ball and pad proposes is proposed, pad on the bonding upper strata powers on and is plated to the spike structure of projection, and leave blind hole at lower floor's pad of bonding, in the time of last up and down two-layer bonding, form a kind of structure of mechanical bond between nail and the hole, thereby can reach the purpose of low-temperature bonding.And Belgian microelectronics center also proposes a kind of optionally hybrid bonded method, be mainly used in a plurality of different nude films simultaneously with the hybrid bonded method of substrate bonding, also be to have utilized two kinds of different materials, namely the hybrid bonded technology of dielectric material and metal material reaches a kind of synchronous effect.
Also have a kind of result of material and method that attribute carries out bonding utilized, adopt two kinds of different metals at pad up and down, wherein go up bond pad surface formation Microstar cone structure, directly insert in the soft metal of lower floor and finish machinery.US6204089B1 mentions as patent, forms a kind of taper soldered ball on the surface of pad, penetrating be used to doing non-conductive layer bonding or insulation, and then further comes bonding, links to each other with electrode, constitutes the electricity connection; And EP480194A also mentions, and forms the taper of highly about 60um～80um by electrochemical method at metallic surface, and there is the metal interconnection of this structure on surperficial or two surfaces, to form firm syndeton; US6761803B2 directly after silica-based surface applies protection by photoetching, places the ion beam reaction chamber with silicon chip in addition, and forms the microprotrusion structure by appropriate condition control on the surface of silicon, and the formation of this structure and application are achieved.But these above methods all exist certain defective and problem, as are difficult to scale of mass production, and each method has only solved a side problem, still exist the bonding time long, problems such as bonding temperature height, this has had a strong impact on production efficiency and product reliability, causes silicon wafer warpage etc.
Summary of the invention
The bonding time that the present invention is directed to existing bonding structure and method existence is long, and the bonding temperature height has had a strong impact on production efficiency and product reliability, causes the deficiency of silicon wafer warpage, provides a kind of multilayer for three-dimension packaging to mix synchronous bonding structure and method.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of multilayer for three-dimension packaging is mixed synchronous bonding method and is comprised:
Step 1, in the structure of n wafer or chip vertical stacking any interconnect interface include bonding to be mixed on the following substrate of substrate and bonding to be mixed, on the following substrate of substrate on the described bonding to be mixed and bonding to be mixed, form through hole respectively, form the metal interconnection structure after filling metal in the described through hole, surface in described metal interconnection structure forms metal pad, wherein, n 〉=2;
Step 2, the surface of substrate metal pad forms hard metal level on described bonding to be mixed;
Step 3, form hard metal taper salient point array on the surface of described hard metal level;
Step 4, form the soft metal layer that is constituted by solderable material on the surface of the following substrate metal pad of described bonding to be mixed;
Step 5, the surface of the nonmetal pad of following substrate of substrate and bonding to be mixed forms the dielectric adhesion layer on described bonding to be mixed;
Step 6, with the following substrate alignment of last substrate and the bonding to be mixed of described bonding to be mixed;
Step 7, after the following substrate alignment of substrate on the described bonding to be mixed and bonding to be mixed, be higher than in the temperature range of dielectric adhesion layer softening temperature being lower than the solderable material fusing point, apply 5,000 newton～90,000 newton's pressure, the pressure size depends on the size of material and the bonding substrate of dielectric adhesion layer, adopt BCB to do adhesion layer as the wafer to eight inch, need apply the pressure of about 10KN, hard metal taper salient point array on the last substrate of described bonding to be mixed is inserted in the soft metal layer of following substrate of bonding to be mixed, dielectric adhesion layer on the following substrate of the dielectric adhesion layer on the last substrate of described bonding to be mixed and bonding to be mixed also combines simultaneously, thereby forms a firm pre-bonding structure;
Step 8, described firm pre-bonding structure is refluxed under the temperature that is higher than the solderable material fusing point, concrete counterflow condition depends on the composition of solder, as the lead-free brazing reflux temperature that contains SnCu and SnAgCu is 210 ℃～230 ℃, time is 1 minute～2 minutes, as the lead-free brazing reflux temperature that contains In is 130 ℃～180 ℃, time is 1 minute～2 minutes, make the hard metal taper salient point array that inserts in the soft metal layer form the metallurgical binding alloy, the dielectric adhesion layer on the following substrate of the dielectric adhesion layer on the last substrate of described bonding to be mixed and bonding to be mixed also is cured simultaneously.
Be that bonding method of the present invention can be applicable to wafer to the bonding of wafer (Wafer-to-Wafer), chip is to the bonding of wafer (Chip-to-Wafer), and chip is to the bonding (Chip-to-Chip) of chip, perhaps earlier the multilayer nude film is bonded together in advance, again with nude film and wafer bonding together, at last will come the complex form of various ways such as hybrid bonded to realize three-dimensional stacked between the multilayer wafer again.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the following substrate of the last substrate/bonding to be mixed of bonding to be mixed is silicon substrate, compound, pottery or glass substrate in the described step 1.
Further, in the described step 3 roughness of taper salient point array-profile arithmetic average error Ra greater than 0.1um, less than 10um.
Further, taper salient point array is made of any hard metal in nickel, copper, tungsten and the iron in the described step 3, and its hardness is greater than 500HV.
Further, soft metal layer is made of any solderable material among Sn, In, SnIn, SnAg, SnCu and the SnAgCu in the described step 4, and its hardness is less than 100HV.
Further, the dielectric adhesion layer is made of benzocyclobutene resin B CB or polyimides PI in the described step 5.
Further, apply 5,000 newton～90,000 newton's pressure in the described step 7.
Further, mix in the synchronous bonding in described multilayer, after a described n wafer or chip are aimed at successively, carry out repeatedly pre-bonding junction and lump together by adding gentle pressurization for n-1 time.
Further, mix in the synchronous bonding in described multilayer, after a described n wafer or chip are aimed at successively, carry out once pre-bonding junction and lump together by once adding gentle pressurization.
The present invention also provides a kind of technical scheme that solves the problems of the technologies described above as follows: a kind ofly mix the multilayer that synchronous bonding method makes by the above-mentioned multilayer that is used for three-dimension packaging and mix synchronous bonding structure.
The invention has the beneficial effects as follows: the present invention realizes the hybrid stack-ups bonding techniques by improving technology and material design, and core concept is to utilize hybrid bonded method, namely uses polymer latex and interim mechanical means in conjunction with solder joint.This method is compared with traditional bonding method, plurality of advantages is arranged, at first, be different from traditional bonding that adopts when three-dimensional stacked in layer, every multiple pileup one deck substrate, or nude film, all need to carry out bonding process one time, namely all need once to pass through high temperature and graceful process, and the present invention adopts all substrates bonding simultaneously, the cost of can saving time, improved the efficient of bonding greatly, improve the rate of finished products of structure, improve reliability of products, the temperature requirement that needs in the time of can reducing bonding by mechanical bond in addition; The second, the present invention adopts hybrid bonded method, after forming the key of metallic compound at welding disking area, also forms bonding between the adhesion layer at non-welding disking area, has increased bond strength and the reliability of bonding; The 3rd, in pre-bonding process, adopt the method in the hard metal surface taper salient point array insertion soft metal, can form firm pre-bonding structure, thereby guarantee the three-dimensional required precision of bonding synchronously of total.
Description of drawings
Fig. 1 is the up and down structural representation of bond pad surface behind the bonding of the embodiment of the invention;
Fig. 2 a to Fig. 2 h is the structural representation of finishing hybrid bonded technical process correspondence between the embodiment of the invention two-layer substrate;
Fig. 3 a to Fig. 3 c is the 3-dimensional multi-layered structural representation that piles up the technical process correspondence of bonding of the embodiment of the invention;
Fig. 4 finishes the structural representation after the three-dimensional structure for other multilayers of the embodiment of the invention are hybrid bonded.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used for explaining the present invention, is not for limiting scope of the present invention.
Fig. 1 is the up and down structural representation of bond pad surface behind the bonding of the embodiment of the invention, be example with silica-based version, and it is interconnected to form at the silica-based version formation metal throuth hole of each layer, and form special bonding structure as shown in Figure 1 in the surface pads of metal interconnection structure up and down, as can be seen from the figure at substrate up and down layer of metal pad 101 is arranged, be preferably metallic copper, can form hard metal level 102 at last pad on demand, can be crome metal, titanium, nickel etc. contact the favorable conductive metal with pad, then the taper salient point array 103 that forms in last bond pad surface, form one deck soft metal at following pad simultaneously, as metallic tin 104.
Fig. 2 a to Fig. 2 h is the structural representation of finishing hybrid bonded technical process correspondence between the embodiment of the invention two-layer substrate:
Step 1 shown in Fig. 2 a, is example with silica-based version, and the following substrate 202 of substrate 201 and bonding to be mixed forms the TSV holes to form metal interconnection structure 203 on bonding to be mixed, and as the substrate of bonding to be mixed, the TSV hole is generally metallic copper;
Step 2 shown in Fig. 2 b, forms metal pad 204 at the metal interconnection body structure surface, and this metal is generally copper or nickel gold, and the formation method can be plating etc., forms hard metal level on the surface of metal pad 204;
Step 3, as Fig. 2 c, treat bonding on the surface of the hard metal level of substrate form the hard metal taper of one deck salient point array 205;
Step 4 as Fig. 2 d, forms certain thickness soft metal 206 in the following substrate metal bond pad surface for the treatment of bonding;
Step 5 is as Fig. 2 e, at the certain thickness dielectric adhesion layer 207 of nonmetal bond pad surface coating formation of the substrate up and down for the treatment of bonding;
Step 6 as Fig. 2 f, will be treated the substrate alignment up and down of bonding;
Step 7, as Fig. 2 g, after treating the substrate alignment up and down of bonding, be bonded together in advance at low temperatures, at this moment the taper salient point array on the pad 205 inserts in the soft metal 206 of following pad, upper and lower medium adhesion layer 207 also combines simultaneously, so then can form a firm pre-bonding structure;
Step 8 as Fig. 2 h, will be treated the backflow at high temperature of the substrate up and down of bonding, metal part is divided form metallurgical binding alloy 208, and the adhesion layer part also is cured.
The composition of metallurgical binding alloy 208 is intermetallic compound, and its type is relevant with the selection of hard metal material with concrete solderable material.According to soft metal layer and hard metal taper salient point array thickness and reflux temperature, there are two kinds of possibilities in the solderable material in the soft metal layer after backflow, namely change intermetallic compound fully into or also have remaining solder.
After simultaneously also can adopting above-mentioned method that MULTILAYER SUBSTRATE is bonded together in advance, reflux by certain temperature and pressure, make the pad place form the metallic compound bonding, the combination that also forms in the medium adhesive area, thereby realizing the synchronous bonding of total, is the 3-dimensional multi-layered structural representation that piles up hybrid bonded technical process correspondence of the embodiment of the invention as Fig. 3 a to Fig. 3 c.Wherein Fig. 3 a is for to pile up the MULTILAYER SUBSTRATE crystal circle structure schematic diagram of pre-bonding, wherein each treats the bonded substrate wafer, as first bonded substrate 310 to be mixed, second bonded substrate 320 to be mixed, n bonded substrate 3n0 to be mixed its structure is arranged, shown in Fig. 3 b, the structural representation of Xing Chenging is shown in Fig. 3 c at last.
Will be in addition, this substrate is silicon-based substrate, also can be the three-dimensional structure that other treat bonding, as direct chip-to-chip, can be with the bonding structure more than two layers and two layers, use perhaps combines these structures, the concrete structure schematic diagram as shown in Figure 4, wherein 410 for treating the substrate of bonding, and 420 is that one three layers bonding piles up good structure, and 430 is that a two-layer bonding piles up good structure.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (8)

1. a multilayer that is used for three-dimension packaging is mixed synchronous bonding method, it is characterized in that described synchronous bonding method comprises:
Step 1, in the structure of n wafer or chip vertical stacking any interconnect interface include bonding to be mixed on the following substrate of substrate and bonding to be mixed, on the following substrate of substrate on the described bonding to be mixed and bonding to be mixed, form through hole respectively, form the metal interconnection structure after filling metal in the described through hole, surface in described metal interconnection structure forms metal pad, wherein, n 〉=2;
Step 2, the surface of substrate metal pad forms hard metal level on described bonding to be mixed;
Step 3, form hard metal taper bump array structure on the surface of described hard metal level, the profile arithmetic average error of wherein said taper bump array structure is greater than 0.1um, less than 10um, and described taper bump array structure is made of any hard metal in nickel, copper, tungsten and the iron, and its hardness is greater than 500HV;
Step 4, form the soft metal layer that is constituted by solderable material on the surface of the following substrate metal pad of described bonding to be mixed;
Step 5, the surface of the nonmetal pad of following substrate of substrate and bonding to be mixed forms the dielectric adhesion layer on described bonding to be mixed;
Step 6, with the following substrate alignment of last substrate and the bonding to be mixed of described bonding to be mixed;
Step 7, after the following substrate alignment of substrate on the described bonding to be mixed and bonding to be mixed, be higher than in the temperature range of dielectric adhesion layer softening temperature being lower than the solderable material fusing point, exert pressure, hard metal taper bump array structure on the last substrate of described bonding to be mixed is inserted in the soft metal layer of following substrate of bonding to be mixed, dielectric adhesion layer on the following substrate of the dielectric adhesion layer on the last substrate of described bonding to be mixed and bonding to be mixed also combines simultaneously, thereby forms a firm pre-bonding structure;
Step 8, described firm pre-bonding structure is refluxed under the temperature that is higher than the solderable material fusing point, make the hard metal taper bump array structure that inserts in the soft metal layer form the metallurgical binding alloy, the dielectric adhesion layer on the following substrate of the dielectric adhesion layer on the last substrate of described bonding to be mixed and bonding to be mixed also is cured simultaneously.
2. the multilayer for three-dimension packaging according to claim 1 is mixed synchronous bonding method, it is characterized in that, the following substrate of the last substrate/bonding to be mixed of bonding to be mixed is silicon substrate, compound, pottery or glass substrate in the described step 1.
3. the multilayer for three-dimension packaging according to claim 1 is mixed synchronous bonding method, it is characterized in that, soft metal layer is made of any solderable material among Sn, In, SnIn, SnAg, SnCu and the SnAgCu in the described step 4, and its hardness is less than 100HV.
4. the multilayer for three-dimension packaging according to claim 1 is mixed synchronous bonding method, it is characterized in that, the dielectric adhesion layer is made of benzocyclobutane olefine resin or polyimides in the described step 5.
5. the multilayer for three-dimension packaging according to claim 1 is mixed synchronous bonding method, it is characterized in that, applies 5,000 newton～90,000 newton's pressure in the described step 7.
6. the multilayer for three-dimension packaging according to claim 1 is mixed synchronous bonding method, it is characterized in that, mix in the synchronous bonding in described multilayer, after a described n wafer or chip are aimed at successively, carry out repeatedly pre-bonding junction and lump together by adding gentle pressurization for n-1 time.
7. the multilayer for three-dimension packaging according to claim 1 is mixed synchronous bonding method, it is characterized in that, mix in the synchronous bonding in described multilayer, after a described n wafer or chip are aimed at successively, carry out once pre-bonding junction and lump together by once adding gentle pressurization.
8. one kind is mixed synchronous bonding structure by mix the multilayer that synchronous bonding method makes as the arbitrary described multilayer for three-dimension packaging of claim 1 to 7.
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