CN111193487B - Package structure, method of manufacturing the same, semiconductor device, and electronic apparatus - Google Patents

Package structure, method of manufacturing the same, semiconductor device, and electronic apparatus Download PDF

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Publication number
CN111193487B
CN111193487B CN201811355048.9A CN201811355048A CN111193487B CN 111193487 B CN111193487 B CN 111193487B CN 201811355048 A CN201811355048 A CN 201811355048A CN 111193487 B CN111193487 B CN 111193487B
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China
Prior art keywords
substrate
package structure
auxiliary
adhesive
layer
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CN201811355048.9A
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Chinese (zh)
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CN111193487A (en
Inventor
杨清瑞
庞慰
孙晨
张孟伦
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Priority to CN201811355048.9A priority Critical patent/CN111193487B/en
Priority to PCT/CN2019/113881 priority patent/WO2020098475A1/en
Publication of CN111193487A publication Critical patent/CN111193487A/en
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material

Abstract

The present invention relates to a package structure for a semiconductor device and a method of manufacturing the same. The semiconductor device comprises a first wafer and a second wafer which are opposite, and the packaging structure comprises: a first bonding layer adapted to be disposed on the first wafer, the first bonding layer having a first bonding region; a second bonding layer adapted to be disposed on a second wafer, the second bonding layer having a second bonding region, the first bonding region and the second bonding region adapted to bond to each other to form a seal; and the anti-drop auxiliary structure is arranged on the first wafer and/or the second wafer, the anti-drop auxiliary structure is connected with the edge of the wafer surface where the bonding area is located, the range of the surface roughness of at least one part of the anti-drop auxiliary structure is 10-80nm, and the corresponding bonding layer extends to cover the anti-drop auxiliary structure. The invention also relates to an electronic device with the semiconductor device.

Description

Package structure, method of manufacturing the same, semiconductor device, and electronic apparatus
Technical Field
Embodiments of the present invention relate to packaging of semiconductor devices, and more particularly, to a packaging structure for a semiconductor device and a method of manufacturing the same, a semiconductor device having the packaging structure, and an apparatus having the semiconductor device.
Background
In recent years, semiconductor devices, particularly integrated circuit chips, based on silicon materials have been rapidly developed, and have been in the mainstream position of the industry. Film bulk wave resonators made by longitudinal resonance of piezoelectric films in the thickness direction have become a viable alternative to surface acoustic wave devices and quartz crystal resonators in wireless communication systems.
The operating frequency of a film bulk acoustic resonator that typically constitutes a filter is typically in the GHz range, where the thickness of the core film layer is only in the micrometer or even nanometer range, so that the bare chip of the filter is extremely sensitive to the influence of the external environment, and dust particles, water vapor, photo-thermal radiation and mechanical impact in the environment may cause the electromechanical performance of the resonator to be greatly degraded. Therefore, the filter is isolated from the outside by constructing a certain protection structure, which is a necessary means for ensuring the stable operation of the filter. A substrate-level package structure is a commonly used package structure for protecting a resonator, and generally includes a functional substrate including a bare chip of a filter and a substrate package substrate for protecting the filter. In the packaging process, the functional substrate and the packaging substrate form a whole through a bonding process, so that the sealing protection of the bare chip of the filter is realized.
Fig. 1A to 1E illustrate a conventional package structure.
Fig. 1A is a schematic diagram of basic components of a conventional package structure. As shown in fig. 1A, the package structure includes a functional substrate F100 and a package substrate C100, wherein a top view of the F100 is shown in fig. 1B. The main structure of the functional portion shown in fig. 1B includes an acoustic wave filter core portion F201, a bonding layer portion F203 (hatched portion), and a base portion F202. The above structure is sectioned along a straight line AA' to obtain a bonding cross-sectional structure (the structure includes the package substrate C100) as shown in fig. 1C.
In the package cross-sectional structure shown in fig. 1C, F212 is a base of a functional portion, F211 is a filter core, F213 is a bonding layer metal, C111 is a package base, and both sides of C111 have a protrusion structure (gasket structure), so that a cavity C115 can be formed between the filter core and the package base at the time of packaging. Fig. 1D is an enlarged schematic view of the region DT111 in fig. 1C. Wherein C121 is a package substrate, and C121 has a protrusion structure C122; f312 is a functional substrate, the upper surface of which extends horizontally to two sides; the surface of the packaging substrate near the protrusion C122 is covered with a bonding layer metal BL121 with a certain thickness; the upper surface of the functional substrate F312 is also covered with a bond metal layer BL122 having a certain thickness. When bonding is performed, the metal layers BL121 and BL122 are in contact with each other, and metal bonds are formed between metal atoms on contact interfaces under the action of high temperature and high pressure, so that the two layers of metals form a whole.
However, the conventional package structure shown in fig. 1D has problems in that: the contact between the metal layer BL122 and the substrate F312 generally has a problem of insufficient strength due to defects formed by the process or adhesion of impurity particles in the environment, and the BL122 is easily peeled off from the substrate F312 (as shown in a P100 region in fig. 1E) under the influence of stress caused by some factors to form a gap (a position shown by an arrow) into which moisture or the like can invade. In the adhesion region P101, the above impurity particles and the substrate surface defects caused by the process may also exist, so that a plurality of tiny channels may be formed at the interface between the metal layer BL122 and the substrate in the region, and the water vapor in the external environment may further enter the sealed cavity through these channels, thereby finally affecting the performance of the resonator.
There are some drawbacks in the bonding type package structure commonly used at present, and these problems generally cause the reliability of the package of the filter device to be reduced.
Disclosure of Invention
The invention provides a sealing structure for alleviating or solving the defects existing in the bonding type packaging structure commonly used at present and improving the sealing effect of the packaging structure.
In the embodiment of the invention, the bonding anti-drop auxiliary structure connected with the filter is constructed in the adhesion area of the substrate, such as a ladder structure, so that the possibility of peeling off the adhesion layer from the substrate can be effectively reduced, the packaging reliability is improved, and the sealing effect is improved.
According to an aspect of an embodiment of the present invention, there is provided a package structure for a semiconductor device including first and second substrates opposing each other, the package structure including: a first adhesive layer adapted to be disposed on the first substrate, the first adhesive layer having a first adhesive zone adapted to be pressed to form a seal; and the anti-drop auxiliary structure is arranged on the first substrate, the anti-drop auxiliary structure is connected with the edge of the surface of the substrate where the first adhesion area is located, the surface roughness of at least one part of the anti-drop auxiliary structure is in a range of 10-80nm, and the first adhesion layer is arranged to extend to cover at least one part of the anti-drop auxiliary structure.
In an alternative embodiment, the anti-drop assistance structure is formed with a stepped surface connected to an edge of the base surface corresponding to the adhesive area. Optionally, the height of the step surface is in the range of 0.5-3.5 μm.
Optionally, the step surface includes a vertical surface, and one side of the vertical surface is connected with the first substrate surface. Further optionally, the step surface further comprises a horizontal plane, and the other side of the vertical surface is connected with the horizontal plane.
Optionally, the step surface includes a bevel, one side of the bevel is connected to the first substrate surface, and the bevel extends obliquely outwards away from the corresponding substrate surface. Further optionally, the step surface further comprises a horizontal plane, and the other side of the inclined plane is connected with the horizontal plane. Optionally, the angle formed by the inclined plane and the horizontal plane is in the range of 30 ° -80 °.
In the present invention, the width of the horizontal plane covered by the first adhesive layer may be selected to have a value ranging from 10 to 50 μm.
In another alternative embodiment, the anti-drop auxiliary structure is formed with a recessed surface connected to the edge of the substrate surface where the adhesive zone is located.
Optionally, the concave surface includes a second inclined surface, a horizontal surface, and a first inclined surface connected to the surface of the first substrate, where the first inclined surface, the horizontal surface, and the second inclined surface are sequentially connected to form a concave shape with a trapezoid cross section; or the concave surface comprises a second inclined surface and a first inclined surface connected with the corresponding substrate surface, and the first inclined surface is connected with the second inclined surface to form a concave shape with a triangular section; and the range of the surface roughness of the first inclined plane is 10-80nm.
Further optionally, the surface roughness of the second inclined plane and/or the horizontal plane ranges from 10nm to 80nm.
Optionally, in the above packaging structure, a surface of the substrate connected with the anti-drop auxiliary structure in the adhesion area has a surface roughness, and the value range of the surface roughness is 10-80nm.
Further, the anti-falling auxiliary structure is provided with a first auxiliary inclined surface and a second auxiliary inclined surface which are respectively arranged at two side edges of the surface of the substrate where the first adhesion area is arranged; and the first auxiliary inclined plane, the substrate surface with surface roughness and the second auxiliary inclined plane are sequentially connected to form a trapezoid cross section.
Optionally, in the above package structure, the thickness of the first adhesion layer covering the anti-falling auxiliary structure has a value ranging from 0.5 μm to 1.5 μm.
Optionally, in the above package structure, the package structure further includes a second adhesive area adapted to be disposed on the second substrate, and the first adhesive area and the second adhesive area are adapted to be extrusion bonded to each other to form a seal. Further, the second substrate is provided with a gasket structure protruding from the second substrate, the second adhesion area is provided on the gasket structure, and the first substrate is provided with the anti-release auxiliary structure and the first adhesion layer. Optionally, a surface of the gasket structure opposite to the first adhesive layer is provided with a strip-like structure or a grid-like structure. The cross section of the strip-shaped structure can have a trapezoid shape with two sides being oblique sides.
Optionally, in the above package structure, the substrate is made of monocrystalline silicon, gallium arsenide, sapphire, or quartz; the adhesion layer is made of gold, tungsten, molybdenum, platinum, ruthenium, iridium, germanium, copper, titanium tungsten, aluminum, chromium, tin, arsenic-doped gold, polydimethylsiloxane or polyurethane, or an alloy or combination thereof; and the adhesion layer is a bonding layer, and the adhesion area is a bonding area. Further, the package structure further includes an auxiliary bonding layer disposed between the substrate surface of the first substrate and the corresponding bonding layer. Optionally, the auxiliary bonding layer comprises an aluminum nitride layer and a molybdenum layer which are sequentially covered on the surface of the substrate.
Embodiments of the present invention also relate to a method of manufacturing a package structure for a semiconductor device including a first substrate and a second substrate opposing each other, the method including the steps of: forming an anti-falling auxiliary structure on the first substrate, wherein the anti-falling auxiliary structure is connected with the edge of the surface of the substrate where the first adhesion area on the first substrate is located, and the range of the surface roughness of the anti-falling auxiliary structure is 10-80nm; providing a first adhesive layer on a first substrate, the first adhesive layer extending over the first adhesive area and at least a portion of the anti-release auxiliary structure; and pressing the first adhesive region between the first substrate and the second substrate to form a seal.
Optionally, the method further comprises the steps of: providing a second adhesive layer on the second substrate, the second adhesive layer having a second adhesive area adapted to adhere to the first adhesive area; and the step of "pressing the first adhesive region between the first substrate and the second substrate to form a seal" comprises pressing the first adhesive region and the second adhesive region between the first substrate and the second substrate to form a seal.
Optionally, the second substrate has a gasket structure thereon protruding from the second substrate; the method further comprises the steps of: a strip-like structure or a grid-like structure is provided on the surface of the gasket structure facing the first substrate. The cross section of the strip-shaped structure can have a trapezoid shape with two sides being oblique sides.
Optionally, the anti-falling auxiliary structure is formed with a stepped surface or a recessed surface connected with the edge of the substrate surface where the first adhesion area is located.
Optionally, the adhesion layer is a metal bonding layer, and the adhesion region is a metal bonding region.
The embodiment of the invention also relates to a semiconductor device, which comprises the packaging structure; a first substrate; a second substrate disposed opposite the first substrate, wherein: the packaging structure is arranged between the first substrate and the second substrate, and the first substrate, the second substrate and the packaging structure enclose an accommodating space. Optionally, the semiconductor device is a bulk acoustic wave filter.
Embodiments of the invention also relate to an electronic device comprising a semiconductor device according to the above.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout the several views, and wherein:
FIGS. 1A-1E are schematic diagrams of prior art package structures;
FIG. 2 is a schematic diagram of a package structure according to an exemplary embodiment of the present invention;
FIG. 3 is a schematic diagram of a package structure according to another exemplary embodiment of the present invention;
fig. 4 is a schematic view of a package structure according to still another exemplary embodiment of the present invention;
fig. 5 is a schematic view of a package structure according to still another exemplary embodiment of the present invention;
fig. 6 is a schematic view of a package structure according to yet another exemplary embodiment of the present invention;
fig. 7 is a schematic diagram of a package structure according to an exemplary embodiment of the present invention.
Detailed Description
The technical scheme of the invention is further specifically described below through examples and with reference to the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of embodiments of the present invention with reference to the accompanying drawings is intended to illustrate the general inventive concept and should not be taken as limiting the invention.
A package structure for a semiconductor device according to an embodiment of the present invention will be described below with reference to fig. 2 to 7 by taking a metal bond formation package as an example.
The inventors have found that in order to enhance the adhesion between the bonding layer and the substrate, avoiding or reducing the problem in fig. 1E, preventing or reducing the bonding layer from falling off the substrate, the surface roughness at the place on the substrate where it meets the adhesion region can be increased by etching.
Based on this, an embodiment of the present invention proposes a package structure for a semiconductor device. As shown in fig. 2, the semiconductor device includes a first substrate a200 and a second substrate AC201 opposite to each other, and the package structure includes: a second bonding layer AL201 adapted to be disposed on a second substrate, the second bonding layer having a second adhesion zone S1; a first bonding layer AL202 adapted to be disposed on a first substrate, the first bonding layer having a first adhesive region S2, the second adhesive region and the first adhesive region being adapted to bond to each other to form a seal; and the anti-falling auxiliary structure F is arranged on the first substrate A200, the anti-falling auxiliary structure F is connected with the substrate surface S3 corresponding to the adhesion area, at least one part of the anti-falling auxiliary structure has surface roughness Ra, the value range of Ra is 10-80nm, and the corresponding bonding layer AL202 extends to cover the anti-falling auxiliary structure F.
In more specific embodiments, the surface roughness of the anti-slip auxiliary structure may be 10nm,50nm or 80nm. At least a part of the anti-slip auxiliary structures here means that not all the anti-slip auxiliary structures need to have a roughness in the range of 10-80nm.
The roughness may be selected to be greater than 10nm in order to microscopically provide sufficient area contact with the adhesive material, while the roughness may be selected to be less than 80nm in order to reduce or prevent the formation of voids between the microscopically and the adhesive layer to reduce the contact area. In fig. 2, AC200 is a package substrate or a package substrate, and AC201 is a bump structure (gasket structure) on the package substrate. In an alternative embodiment, the protruding structure has a height H201 and a width D202. As shown in fig. 2, a bonding metal layer AL201 having a thickness D201 is covered on the protrusion structure and the substrate in the vicinity thereof. In alternative embodiments, H201 may be 8 μm, 15 μm or 12 μm, and H201 may range from 8-15 μm; d202 may be 25 μm, 32 μm or 40 μm, and may range from 25 to 40 μm; d201 may be 0.5 μm, 0.9 μm or 1.5 μm, and may range from 0.5 to 1.5 μm.
AF200 is a functional substrate or functional substrate, on which an anti-release auxiliary structure F is provided; the AF200 is covered with a bonding metal layer AL202 having a thickness D200. In alternative embodiments, D200 may be 0.5 μm, 1.5 μm, 0.9 μm, and D200 may range from 0.5 μm to 1.5 μm.
As shown in fig. 3 to 5, the anti-drop auxiliary structure F is formed with a stepped surface or a stepped structure connected to an edge of the substrate surface corresponding to the adhesive area.
An exemplary embodiment according to the present invention is described below with reference to fig. 3. As shown in fig. 3, the stepped surface includes a vertical surface, one side of which meets the corresponding base surface S3. Further, the step surface may further include a horizontal surface, and the other side of the vertical surface is connected to the horizontal surface. The width of the bonding layer covered on the horizontal plane is denoted by D203, and D203 may be 10 μm, 30 μm or 50 μm, and the value thereof is in the range of 10 to 50. Mu.m.
In fig. 3, AC200 is a package substrate or a package substrate, and AC201 is a bump structure (gasket structure) on the package substrate. In an alternative embodiment, the protruding structure has a height H201 and a width D202. As shown in fig. 3, a bonding metal layer AL201 having a thickness D201 is covered on the protrusion structure and the substrate in the vicinity thereof. In alternative embodiments, H201 is 8 μm, 15 μm or 12 μm, and H201 may range from 8-15 μm; d202 may be 25 μm, 32 μm or 40 μm, and may range from 25 to 40 μm; d201 may be 0.5 μm, 0.9 μm or 1.5 μm, and may range from 0.5 to 1.5 μm.
AF200 is a functional substrate or a functional substrate having a step structure thereon, the step height, i.e., the height of the vertical plane, is H200; the AF200 is covered with a bonding metal layer AL202 having a thickness D200. In alternative embodiments, H200 may be 0.5 μm, 2.0 μm, or 3.5 μm, and H200 may range from 0.5 μm to 3.5 μm; d200 may be 0.5 μm, 1.5 μm or 0.9 μm, and D200 may range from 0.5 to 1.5 μm.
In the present invention, the step structure or step surface or the later-mentioned recess surface or recess structure may be formed by a Reactive Ion Etching (RIE) process or deep silicon etching (DRIE) process or wet etching process using an aqueous potassium hydroxide (KOH). For example, for a monocrystalline silicon substrate, the ionic reactant gas is C 4 F 8 (flow rate in the range of 100-600sccm, preferably in the range of 200-400 sccm) and SF 6 (flow rate range 150-800sccm, preferably 400-500 sccm), and reaction power 50-200W.
The vertical plane of the step is at right angles to the horizontal plane and has a roughness Ra in the range of the hatched area shown in fig. 3 (i.e., the anti-drop auxiliary structure F), the range of the value of Ra being 10-80nm. The surface roughness of the anti-drop auxiliary structure can be 10nm,50nm or 80nm.
In the present invention, the presence of the step surface or the step structure makes: the process of machining the stepped structure can increase the roughness of the machined surface so that the bonding layer material (gold and the like) or the adhesive material layer can be better adhered to the surface of the functional substrate. Furthermore, the stepped structure can provide a larger contact area with the bonding layer material or the adhesion layer material than a conventional straight structure.
An exemplary embodiment according to the present invention is described below with reference to fig. 4.
The detailed structure included in this embodiment is shown in fig. 4. Where AC300 is a package substrate or package substrate and AC301 is a washer structure or bump structure on the package substrate. In an alternative embodiment, the gasket structure has a height H301 and a width D302, and is covered with a bonding metal layer AL301 having a thickness D301 on the protruding structure and the substrate in the vicinity thereof. In alternative embodiments, H301 is 8 μm, 15 μm or 12 μm, and H301 may range from 8-15 μm; d302 may be 25 μm, 32 μm or 40 μm, and may range from 25 to 40 μm; d301 may be 0.5 μm, 1.5 μm or 0.9 μm, and D301 may range from 0.5 to 1.5 μm.
Further, as shown in fig. 4, a strip-like or net-like protrusion structure is further provided on the end face of the gasket structure AC301, each strip-like protrusion having a trapezoid shape with both sides being oblique sides. Optionally, the median width of the trapezoid is D305, and the adjacent trapezoid structures are spaced apart by a distance D306. In further embodiments, D305 may be 1 μm, 2 μm, or 3 μm, which may range from 1 μm to 3 μm; d306 may be 1 μm, 2 μm or 3 μm, and its value may be 1-3 μm; the height of the trapezoid is H302, H302 can be 1 mu m, 2 mu m or 3 mu m, and the value range can be 1-3 mu m.
AF300 is a functional substrate with a step structure thereon, the step structure forms an anti-drop auxiliary structure F, and the step height is H300; the AF300 is covered with an aluminum nitride layer AL304 with a thickness D304, a molybdenum layer AL303 with a thickness D303, and a gold layer AL302 with a thickness D300 in this order. In particular embodiments, H300 may be 0.5 μm, 2.0 μm, or 3.5 μm, which may range from 0.5 to 3.5 μm; d304 may be Or->The range can be +.>D303 may be 0.1 μm, 0.6 μm or 0.8 μm, which may range from 0.1 μm to 0.8 μm; d300 may be 0.5 μm, 1.5 μm or 0.9 μm, which may range from 0.5 to 1.5 μm.
The vertical plane of the stepped structure or stepped surface is at right angles to the horizontal plane, and has roughness Ra in the range of diagonally hatched areas (corresponding to the drop-preventing auxiliary structure F) shown in fig. 4, with a value range of 10-80nm. The surface roughness of the anti-drop auxiliary structure can be 10nm,50nm or 80nm. The width of the bonding layer covered on the horizontal plane is denoted by D303, and D303 may be 10 μm, 30 μm or 50 μm, and the value thereof is in the range of 10 to 50. Mu.m.
In the invention, the bonding layer material (such as gold) at the uppermost layer can more thoroughly cover the side walls of the molybdenum layer and the aluminum nitride layer below the bonding layer material (such as gold) due to the step structure or the step surface.
An exemplary embodiment according to the present invention is described below with reference to fig. 5.
The detailed structure included in this embodiment is shown in fig. 5. In fig. 5, AC400 is a package substrate or package substrate, AC401 is a gasket structure on the package substrate, the structure having a height H401 and a width D402, and the gasket structure and the substrate in the vicinity thereof are covered with a bonding metal layer AL401 having a thickness D401.
In a specific embodiment, H401 ranges from 8-15 μm; d402 is in the range of 25-40 μm; d401 ranges from 0.5 to 1.5. Mu.m. The value range of the parameters is the same as or similar to the value range of the corresponding parameters in fig. 4.
In an alternative embodiment, there is further provided a strip-like or net-like protrusion structure on the end face of the gasket structure AC401, each protrusion having a trapezoid cross-sectional structure with two sides being oblique sides. In an alternative embodiment, the median width of the trapezoid is D405 and the adjacent trapezoids are spaced apart by D406. In a further embodiment, D405 is in the range of 1-3 μm; d406 is in the range of 1-3 μm; the height of the trapezoid is H402, and the value range of H402 is 1-3 mu m. The dimensions of the strip-like or web-like protrusion structures on the end faces of the gasket structure AC401 are the same as or similar to the embodiment in fig. 4.
AF400 is a functional substrate or a functional substrate having a step structure thereon, the step height being H400; the AF400 is covered with an aluminum nitride layer AL404 with a thickness D404, a molybdenum layer AL403 with a thickness D403, and a gold layer AL402 with a thickness D400 in this order.
In a specific embodiment, H400 ranges from 0.5 to 3.5 μm; d404 rangeD403 ranges from 0.1um to 0.8um; d400 ranges from 0.5 to 1.5. Mu.m. The value range of the parameters is the same as or similar to the value range of the corresponding parameters in fig. 4.
The inclined plane of the step structure or the step surface forms an angle AG400 with the horizontal plane, the value range of AG400 is 45 degrees to 80 degrees, and further, the range of AG400 is 50 degrees to 70 degrees; meanwhile, the roughness Ra is arranged in the range of the hatched area (corresponding to the anti-falling auxiliary structure F) shown in fig. 5, and the range of the roughness Ra is 10-80nm. The surface roughness of the anti-drop auxiliary structure can be 10nm,50nm or 80nm.
As shown in fig. 5, the anti-falling auxiliary structure F includes a slope, one side of which is connected with the corresponding substrate surface S3, and the slope extends obliquely outward away from the corresponding substrate surface. The anti-falling auxiliary structure further comprises a horizontal plane, and the other side of the inclined plane is connected with the horizontal plane. The width of the bonding layer covered on the horizontal plane is represented by D403, and D403 can be 10 μm, 30 μm or 50 μm, and the value range is 10-50 μm.
An exemplary embodiment according to the present invention is described below with reference to fig. 6.
The detailed structure included in this embodiment is shown in fig. 6. AC500 is a package substrate or a package substrate, AC501 is a gasket structure on the package substrate, the gasket structure having a height H501 and a width D502, and the bump structure and the substrate in the vicinity thereof are covered with a bonding metal layer AL501 having a thickness D501. In a specific embodiment, H501 ranges from 8-15 μm; d502 range 25-40 μm; d501 is in the range of 0.5-1.5. Mu.m. The value range of the parameters is the same as or similar to the value range of the corresponding parameters in fig. 4.
Further, the end face of the gasket structure AC501 has a stripe-like or net-like protrusion structure, each protrusion having a trapezoid cross-sectional structure with two sides being oblique sides. In an alternative embodiment, the median width of the trapezoid is D505, and the adjacent trapezoids are spaced apart by D506. D505 ranges from 1 to 3 μm; d506 is in the range of 1-3 μm; the height of the trapezoid is H502, and the value range of H502 is 1-3 mu m. The dimensions of the strip-like or web-like protrusion structures on the end faces of the washer structure AC501 are the same or similar to the embodiment in fig. 4.
AF500 is a functional substrate or functional substrate having a groove structure or concave surface thereon, as shown in FIG. 6, the structure having an inverted isosceles trapezoid cross section, the trapezoid having a height H500, a trapezoid bottom width D507, and a top bottom width D508; the AF500 is covered with an aluminum nitride layer AL504 having a thickness D504, a molybdenum layer AL503 having a thickness D503, and a gold layer AL502 having a thickness D500 in this order. In particular embodiments, D504 rangesD503 ranges from 0.1um to 0.8um; d500 ranges from 0.5 to 1.5. Mu.m, and the specific values are the same as or similar to those of the embodiment in FIG. 4. In alternative embodiments, H500 may be 0.5 μm, 2.0 μm, or 3.5 μm, and may range from 0.5 μm to 3.5 μm. In alternative embodiments, D507 may be 2 μm,5 μm, or 8 μm, and may range from 2 μm to 8 μm; d508 is greater than D507.
The range of the diagonally hatched area shown in fig. 6 (corresponding to the anti-drop auxiliary structure F) has a roughness Ra, the range of the value of Ra being 10-80nm. The surface roughness of the anti-drop auxiliary structure can be 10nm,50nm or 80nm.
Based on the above, the anti-drop auxiliary structure F is formed with a concave surface connected to the edge of the substrate surface S3 corresponding to the adhesive area. In a further embodiment, the concave surface includes a second inclined surface, a horizontal surface, and a first inclined surface connected to the corresponding substrate surface, and the first inclined surface, the horizontal surface, and the second inclined surface are sequentially connected to form a concave shape with a trapezoid cross section.
Although not shown, the concave surface includes a second inclined surface and a first inclined surface that meets the corresponding substrate surface, the first inclined surface and the second inclined surface meeting to form a concave shape having a substantially triangular cross section.
Obviously, the surface roughness of the first inclined surface is larger than that of the corresponding substrate surface.
In a further embodiment, the surface roughness of the second bevel and/or the horizontal plane is greater than the surface roughness of the corresponding bonding surface.
An exemplary embodiment according to the present invention is described below with reference to fig. 7.
The detailed structure included in this embodiment is shown in fig. 7. Wherein AC600 is a package substrate or a package substrate, AC601 is a gasket structure on the package substrate, the gasket structure has a height H601 and a width D602, and the gasket structure and the substrate in the vicinity thereof are covered with a bonding metal layer AL601 having a thickness D601. In a specific embodiment, H601 ranges from 8-15 μm; d602 is in the range of 25-40 μm; d601 ranges from 0.5 to 1.5 μm. The value range of the parameters is the same as or similar to the value range of the corresponding parameters in fig. 4.
In an alternative embodiment, there is further a strip-like or net-like protrusion structure on the end face of the gasket structure AC601, each protrusion having a trapezoid cross-sectional structure with two sides being oblique sides. In an alternative embodiment, the median width of the trapezoid is D605 and the adjacent trapezoids are spaced apart by D606. D605 ranges from 1 to 3 μm; d606 is in the range of 1-3 μm; the height of the trapezoid is H602, and the value range of H602 is 1-3 mu m. The dimensions of the strip-like or web-like protrusion structures on the end faces of the washer structure AC601 are the same or similar to the embodiment in fig. 4.
AF600 is a functional substrate or functional substrate having a groove structure thereon with an inverted isosceles trapezoid cross section, the trapezoid having a height H600, a width D607 of the bottom of the trapezoid, and a width D608 of the top of the trapezoid.
In an alternative embodiment, AF600 is covered with an aluminum nitride layer AL604 of thickness D604, a molybdenum layer AL603 of thickness D603, and a gold layer AL602 of thickness D600 in sequence. In a further embodiment, D604 rangeD603 ranges from 0.1 μm to 0.8 μm; d600 is in the range of 0.5-1.5. Mu.m. The value range of the parameters is the same as or similar to the value range of the corresponding parameters in fig. 4.
In alternative embodiments, H600 may be 0.5 μm, 2.0 μm, or 3.5 μm, which may range from 0.5 to 3.5 μm.
In the embodiment shown in FIG. 7, D607 is greater than D602, e.g., about 8-15 μm; d608 is greater than D607.
The range of the diagonally hatched area shown in fig. 7 (corresponding to the anti-drop auxiliary structure F) has a roughness Ra, and the range of the value of Ra is 10 to 80nm. The surface roughness of the anti-drop auxiliary structure can be 10nm,50nm or 80nm.
Accordingly, in the present embodiment, the anti-falling auxiliary structure F has a first auxiliary inclined surface and a second auxiliary inclined surface respectively provided at both side edges of the substrate surface where the adhesion area is located; and the first auxiliary inclined plane, the substrate surface with surface roughness and the second auxiliary inclined plane are sequentially connected to form a trapezoid cross section.
Although in fig. 7 the substrate surface between the first and second auxiliary bevel has a corresponding surface roughness, in other embodiments the substrate surface between the two auxiliary bevel may not be provided with a corresponding surface roughness.
In the example shown in fig. 7, the sealing effect of the substrate surface or the substrate surface under the bonding layer subjected to pressure is made better by making the substrate surface between the first auxiliary inclined surface and the second auxiliary inclined surface also have a corresponding surface roughness.
In the present invention, the substrate or the material of the substrate may be selected from, but not limited to: monocrystalline silicon (Si), gallium arsenide (GaAs), sapphire, quartz, etc. In the present invention, the material of the metal bonding layer may be selected from but not limited to: gold (Au), titanium tungsten, chromium, tin, lead, and the like. In the examples given in fig. 2-7 of the present invention, the process parameters of the package are described mainly in terms of gold (Au), but these process parameters may also be applied to other metals, such as tin, lead, etc.
The present invention has been described above in the embodiment in which the encapsulation seal is formed by metal bonding, but the present invention is not limited to the manner in which the metal bonding layer in the above case may be an adhesive layer, and in this case, an adhesive-type nonmetallic material such as polydimethylsiloxane, benzocyclobutene (BCB), polyurethane, or the like may be used as the material of the adhesive layer. In the present invention, the adhesion layer may be made of gold, tungsten, molybdenum, platinum, ruthenium, iridium, germanium, copper, titanium tungsten, aluminum, chromium, tin, arsenic-doped gold, polydimethylsiloxane, or polyurethane, or an alloy or combination thereof
It should also be noted that in the above embodiment, the first substrate and the second substrate are both provided with a bonding layer. However, in alternative embodiments, an adhesive layer or a bonding layer may also be provided on one substrate on which the anti-release aid is provided.
It is to be noted that in the above embodiment, the anti-slip auxiliary structure is provided on only one substrate, but in the case where the adhesive layer or the bonding layer is provided on both substrates, the anti-slip auxiliary structure according to the present invention may be provided.
Based on the above, the present invention provides a package structure for a semiconductor device, the semiconductor device including a first substrate and a second substrate opposing each other, the package structure including: a first adhesive layer adapted to be disposed on the first substrate, the first adhesive layer having a first adhesive zone adapted to be pressed to form a seal; and the anti-drop auxiliary structure is arranged on the first substrate, the anti-drop auxiliary structure is connected with the edge of the surface of the substrate where the first adhesion area is located, the surface roughness of at least one part of the anti-drop auxiliary structure is in a range of 10-80nm, and the first adhesion layer is arranged to extend to cover at least one part of the anti-drop auxiliary structure. The first substrate and the second substrate are only the substrates numbered, and the anti-drop auxiliary structure is not limited to any one of the opposite substrates.
In the present invention, "the edge of the substrate surface where the first adhesive area is located" means the edge or boundary corresponding to the encapsulation sealing area formed on the substrate.
In the present invention, the connection of the anti-release auxiliary structure with the "edge of the substrate surface where the first adhesive area is located" means that the anti-release auxiliary structure is directly connected or adjacent to the edge, which is within the scope of the present invention.
In the present invention, the anti-detachment auxiliary structure may prevent or reduce the risk of detachment of the bonding layer or the adhesive layer from the substrate.
Although not shown, based on the above, the present invention also proposes a method of manufacturing a package structure for a semiconductor device, the method comprising the steps of: forming an anti-drop auxiliary structure on the first substrate, wherein the anti-drop auxiliary structure is connected with the edge of the surface of the substrate where the first adhesion area on the first substrate is located, and the range of the surface roughness of the bonding anti-drop auxiliary structure is 10-80nm; providing a first adhesive layer on a first substrate, the first adhesive layer extending over the first adhesive area and at least a portion of the anti-release auxiliary structure; and pressing the first adhesive region between the first substrate and the second substrate to form a seal.
Optionally, the method further comprises the steps of: providing a second adhesive layer on the second substrate, the second adhesive layer having a second adhesive area adapted to adhere to the first adhesive area; and the step of "pressing the first adhesive region between the first substrate and the second substrate to form a seal" comprises pressing the first adhesive region and the second adhesive region between the first substrate and the second substrate to form a seal.
Optionally, the second substrate has a gasket structure thereon protruding from the second substrate; the method further comprises the steps of: a strip-like structure or a grid-like structure is provided on the surface of the gasket structure facing the first substrate. Optionally, the anti-falling auxiliary structure is formed with a stepped surface or a recessed surface connected with the edge of the substrate surface where the first adhesion area is located. Optionally, the adhesion layer is a metal bonding layer, and the adhesion region is a metal bonding region.
The packaging structure of the invention can be suitable for packaging semiconductor devices, such as radio frequency filter packaging, and can also be used in packaging structures of other MEMS components. Although not shown, embodiments of the present invention also relate to a semiconductor device including the above-described package structure; a first substrate; a second substrate disposed opposite the first substrate, wherein: the packaging structure is arranged between the first substrate and the second substrate, and the first substrate, the second substrate and the packaging structure enclose an accommodating space. Optionally, the semiconductor device is a bulk acoustic wave filter.
Although not shown, embodiments of the present invention also relate to an electronic apparatus including the above-described semiconductor device.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.

Claims (32)

1. A package structure for a semiconductor device, the semiconductor device including first and second opposed substrates, the package structure comprising:
a first adhesive layer adapted to be disposed on the first substrate, the first adhesive layer having a first adhesive zone adapted to be pressed to form a seal; and
the anti-drop auxiliary structure is arranged on the first substrate, the anti-drop auxiliary structure is connected with the edge of the surface of the substrate where the first adhesion area is located, the range of the surface roughness of at least one part of the anti-drop auxiliary structure is 10-80nm, and the first adhesion layer is arranged to extend to cover at least one part of the anti-drop auxiliary structure.
2. The package structure of claim 1, wherein:
the anti-drop auxiliary structure is formed with a stepped surface connected with the edge of the substrate surface where the first adhesive area is located.
3. The package structure of claim 2, wherein:
the height of the step surface is 0.5-3.5 mu m.
4. The package structure of claim 2, wherein:
the step surface comprises a vertical surface, and one side of the vertical surface is connected with the first substrate surface.
5. The package structure of claim 4, wherein:
the step surface also comprises a horizontal plane, and the other side of the vertical surface is connected with the horizontal plane.
6. The package structure of claim 2, wherein:
the step surface comprises an inclined surface, one side of the inclined surface is connected with the first substrate surface, and the inclined surface extends away from the first substrate surface in an outward inclined mode.
7. The package structure of claim 6, wherein:
the step surface also comprises a horizontal plane, and the other side of the inclined surface is connected with the horizontal plane.
8. The package structure of claim 5, wherein:
the width of the horizontal plane covered by the first adhesive layer is in the range of 10-50 μm.
9. The package structure of claim 7, wherein:
the width of the horizontal plane covered by the first adhesive layer is in the range of 10-50 μm.
10. The package structure of claim 7, wherein:
the angle formed by the inclined plane and the horizontal plane is in the range of 45-80 degrees.
11. The package structure of claim 1, wherein:
the anti-falling auxiliary structure is formed with a concave surface connected with the edge of the substrate surface where the first adhesion area is located.
12. The package structure of claim 11, wherein:
the concave surface comprises a second inclined surface, a horizontal surface and a first inclined surface connected with the surface of the first substrate, and the first inclined surface, the horizontal surface and the second inclined surface are sequentially connected to form a concave shape with a trapezoid cross section; or the concave surface comprises a second inclined surface and a first inclined surface connected with the surface of the first substrate, and the first inclined surface is connected with the second inclined surface to form a concave shape with a triangular section; and is also provided with
The range of the surface roughness of the first inclined plane is 10-80nm.
13. The package structure of claim 12, wherein:
the surface roughness of the second inclined plane and/or the horizontal plane is 10-80nm.
14. The package structure of any of claims 1-13, wherein:
the surface of the substrate which is positioned in the first adhesion area and connected with the anti-drop auxiliary structure has surface roughness, and the value range of the surface roughness is 10-80nm.
15. The package structure of claim 14, wherein:
the anti-falling auxiliary structure is provided with a first auxiliary inclined plane and a second auxiliary inclined plane which are respectively arranged at the two side edges of the surface of the substrate where the first adhesion area is positioned; and is also provided with
The first auxiliary inclined plane, the substrate surface with surface roughness and the second auxiliary inclined plane are sequentially connected to form a trapezoid cross section.
16. The package structure of any of claims 1-13, wherein:
the thickness of the first adhesive layer covering the anti-falling auxiliary structure is in the range of 0.5-1.5 mu m.
17. The package structure of any of claims 1-13, wherein:
the package structure further includes a second adhesive area adapted to be disposed on a second substrate, the first and second adhesive areas adapted to be extrusion bonded to each other to form a seal.
18. The package structure of claim 17, wherein:
the second substrate is provided with a gasket structure protruding from the second substrate, the second adhesion zone is provided on the gasket structure, and the first substrate is provided with the anti-slip auxiliary structure and the first adhesion layer.
19. The package structure of claim 18, wherein:
the surface of the gasket structure opposite to the first adhesive layer is provided with a strip-shaped structure or a grid-shaped structure.
20. The package structure of claim 19, wherein:
the section of the strip-shaped structure is provided with a trapezoid shape with two sides being oblique sides.
21. The package structure of any of claims 1-12, wherein:
the substrate is made of monocrystalline silicon, gallium arsenide, sapphire or quartz;
the adhesion layer is made of gold, tungsten, molybdenum, platinum, ruthenium, iridium, germanium, copper, titanium tungsten, aluminum, chromium, tin, arsenic-doped gold, polydimethylsiloxane or polyurethane, or an alloy or combination thereof; and is also provided with
The adhesive layer is a bonding layer, and the adhesive area is a bonding area.
22. The package structure of claim 21, further comprising:
and the auxiliary bonding layer is arranged between the substrate surface of the first substrate and the corresponding bonding layer.
23. The package structure of claim 22, wherein:
the auxiliary bonding layer comprises an aluminum nitride layer and a molybdenum layer which are sequentially covered on the surface of the substrate.
24. A method of manufacturing a package structure for a semiconductor device including first and second opposed substrates, the method comprising the steps of:
forming an anti-falling auxiliary structure on the first substrate, wherein the anti-falling auxiliary structure is connected with the edge of the surface of the substrate where the first adhesion area on the first substrate is located, and the range of the surface roughness of the anti-falling auxiliary structure is 10-80nm;
providing a first adhesive layer on a first substrate, the first adhesive layer extending over the first adhesive area and at least a portion of the anti-release auxiliary structure; and
the first adhesive region is pressed between the first substrate and the second substrate to form a seal.
25. The method according to claim 24, wherein:
the method further comprises the steps of: providing a second adhesive layer on the second substrate, the second adhesive layer having a second adhesive area adapted to adhere to the first adhesive area; and is also provided with
The step of "pressing the first adhesive region between the first substrate and the second substrate to form a seal" includes pressing the first adhesive region and the second adhesive region between the first substrate and the second substrate to form a seal.
26. The method according to claim 25, wherein:
the second substrate is provided with a gasket structure protruding from the second substrate;
the method further comprises the steps of: a strip-like structure or a grid-like structure is provided on the surface of the gasket structure facing the first substrate.
27. The method according to claim 26, wherein:
the section of the strip-shaped structure is provided with a trapezoid shape with two sides being oblique sides.
28. The method of any one of claims 24-27, wherein:
the anti-falling auxiliary structure is formed with a stepped surface or a concave surface connected with the edge of the substrate surface where the first adhesion area is located.
29. The method of any one of claims 25-27, wherein:
the adhesion layer is a metal bonding layer and the adhesion region is a metal bonding region.
30. A semiconductor device, comprising:
the package structure of any one of claims 1-23;
a first substrate;
a second substrate disposed opposite to the first substrate,
wherein:
the packaging structure is arranged between the first substrate and the second substrate, and the first substrate, the second substrate and the packaging structure enclose an accommodating space.
31. The semiconductor device of claim 30, wherein:
the semiconductor device is a bulk acoustic wave filter.
32. An electronic device comprising the semiconductor device according to claim 30 or 31.
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