WO2024011442A1

WO2024011442A1 - Bonding assembly, micro electronic component and bonding backplate

Info

Publication number: WO2024011442A1
Application number: PCT/CN2022/105370
Authority: WO
Inventors: 马刚
Original assignee: 厦门市芯颖显示科技有限公司
Priority date: 2022-07-13
Filing date: 2022-07-13
Publication date: 2024-01-18
Also published as: CN117836925A

Abstract

A bonding assembly (10), comprising a micro electronic device (11); a bonding substrate (12); a first embedding electrode (13), which is arranged on one side of the micro electronic device (11) and is electrically connected to the micro electronic device (11); and a second embedding electrode (14), which is arranged on one side of the bonding substrate (12) and is electrically connected to the bonding substrate (12). The first embedding electrode (13) and the second embedding electrode (14) can be fitted with each other in an embedded manner so that the micro electronic device (11) can be bonded to the bonding substrate (12); at least one of the first embedding electrode (13) and the second embedding electrode (14) serves as a receiving electrode (15), and the other one serves as an insert electrode (16); and the receiving electrode (15) comprises an electrically conductive base (151) and an accommodating and fixing structure (152) arranged on the electrically conductive base (151), and the accommodating and fixing structure (152) can allow the insert electrode (16) to be inserted therein, and fix the insert electrode (16). The present application has the characteristics of simple repair technology and low repair costs.

Description

Bonding components, micro electronic components and bonding backplanes

Technical field

The present application relates to the technical field of electronic devices, and in particular to a binding assembly, a micro electronic component and a binding backplane.

Background technique

Micro LED (Micro Light Emitting Diode) display technology is currently widely used in various display devices. LED display backplanes require the transfer and bonding of a large number of Micro LED chips. Repairable technology after bonding is the key to mass production. The repair method in related technologies is generally to first energize the bonded backplane to find the location of the bad pixels. , then use a laser to knock out the chip at the dead pixel position, and then replace it with a chip in the original position or the position of the spare electrode. Finally, the repair core is bonded to the back plate using local heating or overall heating. In this process, it is easy to affect the quality of the solder joints of the surrounding chips that have been soldered, and it also has problems such as difficulty and high repair costs.

technical problem

Therefore, there is an urgent need to provide a new solution to solve at least some of the above-mentioned problems of the traditional bonding process of Micro LED display backplanes.

Technical solutions

Therefore, in order to overcome at least some of the defects in the prior art, embodiments of the present application provide a microelectronic component, a binding backplane and a binding assembly, which have the characteristics of simple repair process and low repair cost.

On the one hand, an embodiment of the present application provides a binding assembly, including: a microelectronic device; a binding substrate; a first embedded electrode, which is disposed on one side of the microelectronic device and electrically connected to the microelectronic device; A second fitting electrode is provided on one side of the binding substrate and is electrically connected to the binding substrate; wherein the first fitting electrode and the second fitting electrode can be fitted into each other so that the The microelectronic device can be bound to the binding substrate; at least one of the first chimeric electrode and the second chimeric electrode serves as a receiving electrode, and the other serves as an insertion electrode; the receiving electrode includes a conductive A base and an accommodating and fixing structure provided on the conductive base. The accommodating and fixing structure can be inserted by the insertion electrode and fix the insertion electrode.

In one embodiment, the receiving and fixing structure includes a receiving cavity or a flexible structure.

In one embodiment, the accommodating and fixed structure includes: a plurality of nano-columns, the plurality of nano-columns are spaced apart from each other, and the gaps between the plurality of nano-columns form the container for accommodating the insertion electrode. Place a cavity.

In one embodiment, the first chimeric electrode and the second chimeric electrode have the same structure, and the gap distance between any two adjacent nanocolumns in the second chimeric electrode is equal to the gap distance between the second chimeric electrode and the second chimeric electrode. Each of the nanopillars on a chimeric electrode has the same width.

In one embodiment, the second chimeric electrode and the plurality of nanopillars of the first chimeric electrode are made of the same metal material.

In one embodiment, the accommodation and fixing structure includes conductive sidewalls, the flexible structure and a conductive sheet; the first conductive sidewall encloses a filling cavity on the first conductive base and is connected with the first conductive substrate. The conductive base is electrically connected; the flexible structure is filled in the filling cavity; the conductive sheet covers the side of the accommodation fixed structure away from the conductive base, and the conductive sheet is electrically connected to the conductive side wall .

In one embodiment, the insertion electrode includes: a solder layer; a conductive spike disposed on one side of the solder layer, the conductive spike can penetrate the conductive sheet and penetrate into the flexible structure to The conductive sheet is electrically connected to the receiving electrode.

In one embodiment, the conductive base, the conductive sidewalls and the conductive sheet are made of the same metal material.

In one embodiment, the thickness of the conductive flake is less than 1 micron.

On the other hand, one embodiment of the present application provides a microelectronic component, including: a microelectronic device;

The receiving electrode is electrically connected to the microelectronic device. The receiving electrode has a conductive base and a receiving and fixing structure provided on the conductive base. The receiving and fixing structure can be inserted by an insertion electrode on a binding substrate and The insertion electrode is fixed so that the microelectronic device can be bound to the binding substrate.

In one embodiment, the accommodating and fixed structure includes conductive side walls, a flexible structure and a conductive sheet; the conductive side walls enclose a filling cavity on the conductive base and are electrically connected to the conductive base; The flexible structure is filled in the filling cavity; the conductive sheet covers the side of the accommodating and fixed structure away from the conductive base, and the conductive sheet is electrically connected to the conductive side wall.

In one embodiment, the accommodating and fixed structure further includes a plurality of nano-columns, which are disposed on a side of the conductive substrate away from the microelectronic device; the plurality of nano-columns are spaced apart from each other, and the plurality of nano-columns are The gap between the posts forms a receiving cavity for receiving the inserted electrode.

Another embodiment of the present application provides a binding backplane, including: a binding substrate; a receiving electrode electrically connected to the microelectronic device, the receiving electrode having a conductive base and a housing disposed on the conductive base A fixing structure, the accommodating and fixing structure can be inserted into an insertion electrode on a microelectronic device and fix the insertion electrode; so that the microelectronic device can be bound to the binding substrate.

In one embodiment, the receiving electrode further includes: a plurality of nano-columns disposed on a side of the conductive substrate away from the microelectronic device; the plurality of nano-columns are spaced apart from each other. Gaps between the plurality of nanopillars form the accommodation cavity for accommodating the inserted electrode.

The above-mentioned embodiments of the present application at least have one or more of the following beneficial effects: by arranging receiving electrodes with accommodating and fixing structures on microelectronic devices or binding substrates, the receiving electrodes and the insertion electrical contacts can be fitted into each other, and the The microelectronic devices and the binding substrate are bound without heating and welding. After repair, the entire surface can be heated and welded or wirelessly heated and welded, which can reduce the adverse impact on peripheral devices during the repair process.

Other aspects and features of the present application will become apparent from the following detailed description with reference to the accompanying drawings. It is to be understood, however, that the drawings are designed for the purpose of illustration only and not as a definition of the scope of the application. It should also be understood that, unless otherwise indicated, the drawings are not necessarily drawn to scale and are merely intended to conceptually illustrate the structures and processes described herein.

beneficial effects

Description of drawings

Specific embodiments of the present application will be described in detail below with reference to the accompanying drawings.

Figure 1 is a schematic structural diagram of a binding component provided by the first embodiment of the present application.

FIG. 2 is a schematic structural diagram of a specific embodiment of the binding component shown in FIG. 1 .

FIG. 3 is a schematic structural diagram of another specific embodiment of the binding component shown in FIG. 2 .

FIG. 4 is a schematic flowchart of the repair method of the binding component shown in FIG. 2 .

Figure 5 is a schematic structural diagram of a binding component provided by the second embodiment of the present application.

FIG. 6 is a schematic structural diagram of a specific embodiment of the binding component shown in FIG. 5 .

FIG. 7 is a schematic flowchart of the repair method of the binding component shown in FIG. 6 .

FIG. 8 is a schematic structural diagram of a microelectronic component provided by the third embodiment of the present application.

Figure 9 is a schematic structural diagram of a micro electronic component provided by the fourth embodiment of the present application.

Figure 10 is a schematic structural diagram of a binding backplane provided by the fifth embodiment of the present application.

Figure 11 is a schematic structural diagram of a binding backplane provided by the sixth embodiment of the present application.

[Explanation of reference numbers] 10: binding component; 11: microelectronic device; 12: binding substrate; 13: first chimeric electrode; 14: second chimeric electrode; 15: receiving electrode; 151: conductive substrate; 152: Accommodating fixed structure; 1521: Conductive side wall; 1522: Flexible structure; 1523: Conductive sheet; 1524: Nano-column; 1525: Accommodating cavity; 1526: Filling cavity; 16: Inserted electrode; 161: Solder layer; 162: Conductive spikes; 20: Micro electronic components; 30: Binding backplane.

Best Mode of Carrying Out the Invention

Type here the paragraph describing the best mode for carrying out the invention.

Embodiments of the invention

In order to make the above objects, features and advantages of the present application more obvious and easy to understand, the specific implementation modes of the present application will be described in detail below with reference to the accompanying drawings.

In order to enable those of ordinary skill in the art to better understand the technical solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described implementation The examples are only part of the embodiments of this application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts should fall within the scope of protection of this application.

It should be noted that the terms "first", "second", etc. in the description and claims of this application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It is to be understood that the terms so used are interchangeable under appropriate circumstances so that the embodiments of the application described herein can be practiced in sequences other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, e.g., a process, method, system, product, or apparatus that encompasses a series of steps or units and need not be limited to those explicitly listed. Those steps or units may instead include other steps or units not expressly listed or inherent to the processes, methods, products or devices.

It should also be noted that the division of multiple embodiments in this application is only for the convenience of description and should not constitute a special limitation. Features in various embodiments can be combined and referenced to each other if there is no contradiction.

In related technologies, there are mainly two types of binding of Micro LED. One is to set an adhesive layer on the driver circuit board and attach the Micro LED to the driver circuit board. The LED is transferred to the adhesive layer and the adhesive layer is heated to make the adhesive material adhere to the Micro LED and realize the bonding connection between the Micro LED and the driver circuit board. The other is to set welding electrodes on the drive circuit board and heat the welding to make the Micro The electrodes of the LED are soldered to the electrodes on the circuit board. Both binding methods have some flaws in the binding repair process of Micro LED. For example, in the adhesive method, since the adhesive layer loses its viscosity after the first transfer, it is necessary to remove the failed adhesive layer on the spare electrode and replenish it with new adhesive before transferring a new chip to the spare electrode position. Materials, due to Micro The size of LEDs is in the micron range, so it is difficult to remove and replenish single-point adhesive materials. For the heating and welding solution, the entire panel needs to be heated and welded during the first transfer. If a new chip needs to be bound during repair, the repair point needs to be heated for a second time. The thermal effect during heating and welding may cause It will affect the nearby points, causing the solder joints to melt here, affecting the welding quality. To this end, embodiments of the present application provide a new binding solution to solve at least part of the above defects.

[First Embodiment] As shown in Figure 1, the first embodiment of the present application provides a binding assembly 10, which includes a microelectronic device 11, a binding substrate 12, and an electrical circuit disposed on one side of the microelectronic device 11. The first fitting electrode 13 connected to the microelectronic device 11 is provided on one side of the binding substrate 12 and is electrically connected to the second fitting electrode 14 of the binding substrate 12 . Wherein, the first fitting electrode 13 and the second fitting electrode 14 can be fitted with each other so that the microelectronic device 11 can be bound to the binding substrate 12 . At least one of the first fitting electrode 13 and the second fitting electrode 14 serves as the receiving electrode 15 , and the other serves as the insertion electrode 16 . The receiving electrode 15 includes a conductive base 151 and an accommodating and fixing structure 152 provided on the conductive base 151. The accommodating and fixing structure 152 can be inserted by the insertion electrode 16 and fix the insertion electrode 16. Among them, the microelectronic device 11 is, for example, a microlight-emitting device, specifically a Micro LED chip. As shown in FIG. 1, it is a flip-chip Micro LED chip, which has a P-type semiconductor layer and an N-type semiconductor layer. The P-type semiconductor A first fitting electrode 13 is provided on each of the N-type semiconductor layer and the N-type semiconductor layer. The corresponding binding substrate 12 is, for example, a Micro LED drive circuit board, and two second fitting electrodes 14 are provided on the binding substrate 12 corresponding to one Micro LED chip. A plurality of second fitting electrodes 14 that can bind a plurality of Micro LED chips are provided on the binding substrate 12 . Of course, FIG. 1 only shows that the microelectronic device 11 is a flip-chip Micro LED chip. The microelectronic device 11 can also be a vertical Micro LED chip, for example, in the P-type semiconductor layer of the vertical Micro LED chip. A first fitting electrode 13 is arranged on the binding substrate 12, and a second fitting electrode 14 is arranged on the binding substrate 12 corresponding to a Micro LED binding position. Referring to FIG. 2 , for example, the second fitting electrode 14 on the binding substrate 12 serves as the receiving electrode 15 , and the first fitting electrode 13 on the microelectronic device 11 serves as the insertion electrode 16 . On the contrary, in some embodiments, the first fitting electrode 13 on the microelectronic device 11 shown in FIG. 3 may be used as the receiving electrode 15 and the second fitting electrode 14 on the bonded substrate 12 may be used as the insertion electrode 16. Or the first fitting electrode 13 and the second fitting electrode 14 are inserted into each other, which can be understood as both serving as the receiving electrode 15 , or it can also be understood that the first fitting electrode 13 and the second fitting electrode 14 each have a conductive base 151 and a receiving and fixing structure 152 provided on the conductive base 151. The receiving and fixing structure 152 on the first fitting electrode 13 can be inserted into and fixed by the second fitting electrode 14. The second fitting electrode 14 The accommodating and fixing structure 152 on the first fitting electrode 13 can be inserted into and fix the first fitting electrode 13 . The accommodating fixed structure 152 includes an accommodating cavity 1525 or a flexible structure 1522 . For example, referring to FIGS. 2 and 3 , the accommodating and fixing structure 152 includes a conductive side wall 1521 , a flexible structure 1522 and a conductive sheet 1523 . The first conductive sidewall 1521 encloses a filling cavity 1526 on the first conductive base 151 and is electrically connected to the conductive base 151 . Flexible structure 1522 fills filling cavity 1526. The conductive sheet 1523 covers the side of the accommodating fixed structure 152 away from the conductive base 151 , and the conductive sheet 1523 is electrically connected to the conductive side wall 1521 . The conductive base 151, the conductive sidewalls 1521 and the conductive sheet 1523 are all made of metal materials. The material of the conductive base 151 can be, for example, the pad material used in traditional drive bonding backplanes, such as copper, nickel, gold, silver and other metals. One type or combination, with a thickness ranging from about 1 to 2 microns. The conductive base 151 , the conductive sidewall 1521 and the conductive sheet 1523 can be made of the same metal material or different metal materials. When they are made of the same metal material, their thermal expansion coefficients are consistent and the binding effect is better. The flexible structure 1522 may be, for example, a soft material such as silicone, resin, or photoresist. The hardness of the flexible structure 1522 may be, for example, 40 to 80 HA (Shore A hardness). The thickness of the conductive sidewall 1521 and the flexible structure 1522 is about 1 to 2 microns, and the thickness of the conductive sheet 1523 is less than 1 micron, for example, between 300 and 500 nanometers. The thinner thickness makes it easy to be inserted and electrically connected by the insertion electrode 16 . In one embodiment, the insertion electrode 16 may include, for example, a solder layer 161 and a conductive spike 162 disposed on one side of the solder layer 161 . The conductive spike 162 may penetrate the conductive sheet 1523 and penetrate into the flexible structure 1522 to pass through the conductive sheet 1523 The insertion electrode 16 and the receiving electrode 15 are electrically connected. The diameter of the conductive spikes 162 is less than 1 micron, for example, between 500 nanometers and 1 micron, and the height is, for example, between 1 and 2 microns, so that the conductive spikes 162 can better penetrate the conductive sheet 1523 . The solder layer 161 may use conventional solder metals such as tin, nickel, copper, indium, bismuth or alloys thereof. For example, when the first fitting electrode 13 shown in FIG. 2 is used as the insertion electrode 16 (that is, the one provided on the microelectronic device 11 is the insertion electrode 16), the solder layer 161 is provided on the P electrode and N electrode of the Micro LED, for example. On the contrary, when the second fitting electrode 14 is used as the insertion electrode 16 as shown in FIG. 3 (that is, the insertion electrode 16 is provided on the binding substrate 12), the solder layer 161 is provided on the pad layer of the binding substrate 12, for example. superior.

Among them, the preparation process of the receiving electrode 15 provided in this embodiment may include, for example, the following steps: providing a binding substrate 12 (or a microelectronic device 11), and reserving at least one spare electrode position on the binding substrate 12 in addition to the conventional electrode positions. Electrode positions; forming a conductive substrate corresponding to each electrode position; forming a conductive side wall on the side of the conductive substrate away from the binding substrate 12 (or the microelectronic device 11), and enclosing a filling cavity on each conductive substrate; for example, using Coat a flexible material layer (such as a silicone layer) on the side of the binding substrate 12 (or the microelectronic device 11) adjacent to the conductive substrate by spin coating or other methods; etching unnecessary parts of the flexible material layer (ie, except for each filled cavity) other parts); a conductive sheet is formed on the side of the flexible material layer away from the binding substrate 12 . The formation process of the conductive base, conductive sidewalls and conductive sheets can be, for example, an evaporation process, and can be grown only at the locations where growth is required through a mask process. The step of removing excess flexible material may also be performed after forming the conductive sheet.

Refer to FIG. 4 , which is a schematic flowchart of the repair method of the binding component 10 shown in FIG. 2 . The figure only shows two sets of second fitting electrodes 14 on the binding substrate 12, one of which is a backup electrode, but this embodiment is not limited thereto. In step (a) of FIG. 4 , the microelectronic device 11 and the binding substrate 12 in the binding assembly 10 are respectively provided. The first fitting electrode 13 provided on the microelectronic device 11 serves as the insertion electrode 16 , and the binding substrate 12 The second fitting electrode 14 serves as the receiving electrode 15 . Bind the microelectronic device 11 to a set of electrodes on the left side of the binding substrate 12. By pressing down on the microelectronic device 11, the conductive spikes 162 on the inserted electrodes 16 penetrate the conductive thin sheets 1523 on the receiving electrode 15 and penetrate into the flexible structure. In 1522, the structure after the first binding shown in step (b) in Figure 4 is obtained. At this time, the conductive spike 162 inserted into the electrode 16 is stuck and fixed by the conductive sheet 1523 and the flexible structure 1522. The conductive spike 162 The pad layer 161 is in contact with the conductive sheet 1523 to achieve electrical connection. After the first transfer is completed, the binding substrate 12 is powered on to drive the microelectronic device 11. If the microelectronic device 11 emits light, the binding is normal. If the microelectronic device 11 does not emit light, the binding is abnormal and needs to be repaired. The first abnormally bound microelectronic device 11 is removed in step (c). Before step (c) in FIG. 4 , the right group of receiving electrodes 15 (that is, the backup electrodes) has not undergone a bonding process. In step (d), a new microelectronic device 11 can be transferred to the position of the group of backup electrodes. The conductive spikes 162 on the insertion electrode 16 of the new microelectronic device 11 are caused to pierce the conductive sheet 1523 on the receiving electrode 15 and penetrate into the flexible structure 1522 to obtain the repaired structure shown in step (d) in Figure 4 At this time, the conductive spike 162 inserted into the electrode 16 is caught and fixed by the conductive sheet 1523 and the flexible structure 1522. The conductive spike 162 and the pad layer 161 contact the conductive sheet 1523 to achieve electrical connection. You can check again whether the binding of the backup electrode is normal. If the binding is abnormal, you can continue to perform the above repair steps. If the binding is normal, you can heat the binding substrate 12 as a whole to melt the pad layer 161 to achieve the entire panel. Welding of the microelectronic device 11 and the bonding substrate 12 . In this way, during the entire transfer repair process, heating and welding can be performed only after the last transfer, without the need for single-point heating and welding of the aforementioned related technologies, which will not affect the quality of the surrounding solder joints. And during the repair process, you only need to clear the Micro With LED, there is no need to carry out the process of removing the adhesive layer and replenishing the adhesive material in the aforementioned related technologies, making the repair process simpler and more feasible.

[Second Embodiment] Referring to Figure 5, a second embodiment of the present application provides another binding component 10, which includes a microelectronic device 11, a binding substrate 12, and is disposed on one side of the microelectronic device 11 and electrically connected The first fitting electrode 13 of the microelectronic device 11 is disposed on one side of the binding substrate 12 and is electrically connected to the second fitting electrode 14 of the binding substrate 12 . Wherein, the first fitting electrode 13 and the second fitting electrode 14 can be fitted with each other so that the microelectronic device 11 can be bound to the binding substrate 12 . At least one of the first fitting electrode 13 and the second fitting electrode 14 serves as the receiving electrode 15 , and the other serves as the insertion electrode 16 . The receiving electrode 15 includes a conductive base 151 and an accommodating and fixing structure 152 provided on the conductive base 151. The accommodating and fixing structure 152 can be inserted by the insertion electrode 16 and fix the insertion electrode 16. The microelectronic device 11 is, for example, a microlight-emitting device, specifically a Micro LED chip. As shown in FIG. 5 , it is a flip-chip Micro LED chip, which has a P-type semiconductor layer and an N-type semiconductor layer. The P-type semiconductor layer A first fitting electrode 13 is provided on each of the N-type semiconductor layer and the N-type semiconductor layer. The corresponding binding substrate 12 is, for example, a Micro LED drive circuit board, and two second fitting electrodes 14 are provided on the binding substrate 12 corresponding to one Micro LED chip. A plurality of second fitting electrodes 14 that can bind a plurality of Micro LED chips are provided on the binding substrate 12 . Of course, FIG. 5 only shows that the microelectronic device 11 is a flip-chip Micro LED chip. The microelectronic device 11 can also be a vertical Micro LED chip, for example, on the P-type semiconductor of the vertical Micro LED chip. A first fitting electrode 13 is provided, and a second fitting electrode 14 is provided on the binding substrate 12 corresponding to a Micro LED binding position. Among them, for example, the second fitting electrode 14 on the binding substrate 12 serves as the receiving electrode 15, and the first fitting electrode 13 on the microelectronic device 11 serves as the insertion electrode 16. On the contrary, in some embodiments, the first embedded electrode 13 on the microelectronic device 11 may serve as the receiving electrode 15 and the second embedded electrode 14 on the binding substrate 12 may serve as the insertion electrode 16 . Or in the structure of the binding component 10 as shown in Figure 6, the first fitting electrode 13 and the second fitting electrode 14 can be inserted into each other, which can be understood as both receiving electrodes 15, or as the first fitting electrode. The electrode 13 and the second embedded electrode 14 each have a conductive base 151 and a receiving and fixing structure 152 provided on the conductive base 151. The receiving and fixing structure 152 on the first embedded electrode 13 can be inserted into the second embedded electrode 14 and The second fitting electrode 14 is fixed, and the accommodation and fixing structure 152 on the second fitting electrode 14 can be inserted into and fixed by the first fitting electrode 13 . The accommodating fixed structure 152 includes an accommodating cavity 1525 or a flexible structure 1522 .

In this embodiment, the accommodating and fixed structure 152 includes, for example, a plurality of nano-columns 1524. The plurality of nano-columns 1524 are spaced apart from each other. The gaps between the plurality of nano-columns 1524 form accommodating cavities 1525 for accommodating the inserted electrodes 16. Among the plurality of nano-columns 1524, the height of each nano-column 1524 is, for example, 2 to 3 microns (the overall thickness of the receiving electrode 15 is 3 to 4 microns), and the width (or diameter) of each nano column 1524 is, for example, 200 to 200 microns. Between 500 nanometers, the gap between two adjacent nano-columns 1524 is basically equal to the width of each nano-column 1524, that is, the gap between two adjacent nano-columns 1524 is approximately 200 to 500 nanometers. In some embodiments, the structures of the first chimeric electrode 13 and the second chimeric electrode 14 are the same, so the gap distance between two adjacent nanopillars in the first chimeric electrode 13 is the same as the gap distance between each nanocolumn on the second chimeric electrode 14 . Each nanopillar 1524 has the same width. The gap distance between two adjacent nano-columns in the second embedded electrode 14 is equal to the width of each nano-column 1524 on the first embedded electrode 13 . This allows the plurality of nanopillars 1524 of the first embedded electrode 13 and the second embedded electrode 14 to be in contact with each other and fixed. Specifically, the plurality of nano-columns 1524 are made of metal material, such as copper, nickel metal, etc. The metal material has better ductility, so that the first fitting electrode 13 and the second fitting electrode 14 interpenetrate each other. Slight deformation can occur for better bonding and not easy to damage. More specifically, the plurality of nanopillars 1524 on the first embedded electrode 13 and the second embedded electrode 14 are made of the same metal, for example. Alternatively, the nano-rods 1524 of one of the first embedded electrode 13 and the second embedded electrode 14 may be made of weldable materials such as tin, nickel, copper, indium, bismuth or alloys thereof, and the nano-pillars 1524 of the other may be made of copper. , nickel and other metals that can be mutually melted with the welding material, the first fitting electrode 13 and the second fitting electrode 14 can be heated and welded.

Among them, the preparation process of the receiving electrode 15 provided in this embodiment may include, for example, the following steps: providing a binding substrate 12 (or a microelectronic device 11), and reserving at least one spare electrode position on the binding substrate 12 in addition to the conventional electrode positions. Electrode positions; a conductive substrate is formed corresponding to each electrode position; multiple nano-columns are formed on the side of the conductive substrate away from the binding substrate 12 (or the microelectronic device 11); the formation process of the conductive substrate and multiple nano-columns can be evaporation. Plating or chemical plating. Alternatively, in some embodiments, for example, metal can be used to form an integral metal block at each electrode position, and then a plurality of nanopillars can be etched on the metal block through processes such as etching. The above formation process is only for illustration. This embodiment is not limited to this.

As shown in FIG. 7 , it is a schematic flow chart of the repair method of the binding component 10 shown in FIG. 6 . The figure only shows two sets of second fitting electrodes 14 on the binding substrate 12, one of which is a backup electrode, but this embodiment is not limited thereto. In step (a) of FIG. 7 , the microelectronic device 11 and the binding substrate 12 in the binding assembly 10 are provided respectively. The first fitting electrode 13 provided on the microelectronic device 11 and the second fitting electrode 13 on the binding substrate 12 are provided respectively. Each of the embedded electrodes 14 has a receiving and fixing structure 152 , that is, the first embedded electrode 13 and the second embedded electrode 14 serve as the receiving electrode 15 and the inserting electrode 16 for each other. In step (a), the microelectronic device 11 is bound to a set of electrodes on the left side of the binding substrate 12 . By pressing down the microelectronic device 11 , the plurality of nanopillars of the first embedded electrode 13 and the second embedded electrode 14 are formed. 1524 are interspersed with each other to obtain the structure after the first transfer as shown in step (b) of Figure 7 . At this time, due to the "burr" shape of the plurality of nano-columns 1524, the first chimeric electrode 13 and the second chimeric electrode 14 can be closely combined with each other and achieve electrical connection. After the first transfer is completed, the binding substrate 12 is powered on to drive the microelectronic device 11. If the microelectronic device 11 emits light, the binding is normal. If the microelectronic device 11 does not emit light, the binding is abnormal and needs to be repaired. The first abnormally bound microelectronic device 11 is removed in step (c) of FIG. 7 . Before step (c), the right set of backup electrodes has not undergone a bonding process. In step (d), a new microelectronic device 11 can be transferred to the position of this set of backup electrodes. The first fitting electrode 13 of the new microelectronic device 11 and the second fitting electrode 14 at the spare electrode position are interleaved with each other to obtain the repaired structure shown in step (d) in FIG. 7 . You can recheck whether the binding of the spare electrode position is normal. If the binding is abnormal, you can continue with the above repair steps. If the binding is normal, the "burr" shape of the nanocolumn 1524 can already make the microelectronic device 11 and the binding substrate 12 stably combined, and the binding is completed without heating and welding, which can reduce the influence of heating and welding. Of course, when necessary, the nano-columns 1524 of one of the first fitting electrode 13 and the second fitting electrode 14 can be selected as the welding material, and the nano-columns 1524 of the other one can be made of a metal material that can be interfused with the welding material. , then all the microelectronic devices 11 on the entire binding substrate 12 can be integrally heated and welded after the last transfer. In this way, during the entire transfer repair process, heating and welding can only be performed after the last transfer, without the need for single-point heating and welding of the aforementioned related technologies, which will not affect the quality of the surrounding solder joints. And during the repair process, you only need to clear the Micro With LED, there is no need to carry out the process of removing the adhesive layer and replenishing the adhesive material in the aforementioned related technologies, making the repair process simpler and more feasible.

[Third Embodiment] As shown in FIG. 8 , the third embodiment of the present application provides a microelectronic component 20 , which includes a microelectronic device 11 and a receiving electrode 15 . The receiving electrode 15 is electrically connected to the microelectronic device 11 . The receiving electrode 15 has a conductive base 151 and a receiving and fixing structure 152 arranged on the conductive base 151. The receiving and fixing structure 152 can be inserted into and fixed by an insertion electrode on a binding substrate, so that the microelectronic device 11 can be bound. fixed on the binding substrate.

Wherein, the micro electronic device 11 is, for example, a micro light-emitting device, specifically, it is a Micro The LED chip shown in Figure 8 is a flip-chip Micro The LED chip has a P-type semiconductor layer and an N-type semiconductor layer, and a receiving electrode 15 is provided on each of the P-type semiconductor layer and the N-type semiconductor layer. The conductive substrate 151 is, for example, the P electrode or N electrode of a traditional Micro LED chip, with a thickness ranging from about 1 to 2 microns. Of course, FIG. 8 only shows the structure in which the microelectronic device 11 is a flip-chip Micro LED chip. The microelectronic device 11 may also be a vertical Micro LED chip, for example, in the P-type semiconductor layer of the vertical Micro LED chip. A receiving electrode 15 is provided on it. The accommodating fixed structure 152 includes an accommodating cavity 1525 or a flexible structure 1522 . For example, referring to FIG. 8 , the accommodating and fixing structure 152 includes a conductive side wall 1521 , a flexible structure 1522 and a conductive sheet 1523 . The first conductive sidewall 1521 encloses a filling cavity 1526 on the first conductive base 151 and is electrically connected to the conductive base 151 . Flexible structure 1522 fills filling cavity 1526. The conductive sheet 1523 covers the side of the accommodating fixed structure 152 away from the conductive base 151 , and the conductive sheet 1523 is electrically connected to the conductive side wall 1521 . The conductive base 151, the conductive sidewalls 1521 and the conductive sheet 1523 are all made of metal materials, such as one or a combination of copper, nickel, gold, silver and other metals. The conductive base 151 , the conductive sidewall 1521 and the conductive sheet 1523 can be made of the same metal material or different metal materials. When they are made of the same metal material, their thermal expansion coefficients are consistent and the binding effect is better. The flexible structure 1522 may be, for example, a soft material such as silicone, resin, or photoresist. The hardness of the flexible structure 1522 may be, for example, 40 to 80 HA (Shore A hardness). The thickness of the conductive sidewall 1521 and the flexible structure 1522 is about 1 to 2 microns, and the thickness of the conductive sheet 1523 is less than 1 micron, for example, between 300 and 500 nanometers. The thinner thickness makes it easy to be bound to the inserted electrode on the substrate. Plug in and connect electrically. The insertion electrode on the binding substrate is arranged in a spike shape to make the bonding easier. The microelectronic component 20 provided in this embodiment can implement a repair method similar to that described in the first embodiment. During the entire transfer repair process, heating and welding can only be performed after the last transfer, without the need for single-point heating and welding in the aforementioned related technologies. , will not affect the quality of the surrounding solder joints. And during the repair process, you only need to clear the Micro With LED, there is no need to carry out the process of removing the adhesive layer and replenishing the adhesive material in the aforementioned related technologies, making the repair process simpler and more feasible.

[Fourth Embodiment] As shown in FIG. 9 , the fourth embodiment of the present application provides a microelectronic component 20 , which includes a microelectronic device 11 and a receiving electrode 15 . The receiving electrode 15 is electrically connected to the microelectronic device 11 . The receiving electrode 15 has a conductive base 151 and a receiving and fixing structure 152 arranged on the conductive base 151. The receiving and fixing structure 152 can be inserted into and fixed by an insertion electrode on a binding substrate, so that the microelectronic device 11 can be bound. fixed on the binding substrate.

Wherein, the micro electronic device 11 is, for example, a micro light-emitting device, specifically, it is a Micro The LED chip shown in Figure 9 is a flip-chip Micro The LED chip has a P-type semiconductor layer and an N-type semiconductor layer, and a receiving electrode 15 is provided on each of the P-type semiconductor layer and the N-type semiconductor layer. The conductive substrate 151 is, for example, the P electrode or N electrode of a traditional Micro LED chip, with a thickness ranging from about 1 to 2 microns. Of course, FIG. 9 only shows the structure in which the microelectronic device 11 is a flip-chip Micro LED chip. The microelectronic device 11 may also be a vertical Micro LED chip, for example, in the P-type semiconductor layer of the vertical Micro LED chip. A receiving electrode 15 is provided on it.

Referring to FIG. 9 , in this embodiment, the accommodating and fixed structure 152 includes, for example, a plurality of nanopillars 1524 , and the plurality of nanopillars 1524 are disposed on a side of the conductive substrate 151 away from the microelectronic device 11 . The plurality of nano-columns 1524 are spaced apart from each other, and the gaps between the plurality of nano-columns 1524 form accommodating cavities 1525 for accommodating electrodes inserted on the binding substrate. Among the plurality of nano-columns 1524, the height of each nano-column 1524 is, for example, 2 to 3 microns (the overall thickness of the receiving electrode 15 is 3 to 4 microns), and the width (or diameter) of each nano column 1524 is, for example, 200 to 200 microns. Between 500 nanometers, the gap between two adjacent nanocolumns 1524 is basically equal to the width of each nanocolumn 1524, that is, the gap between two adjacent nanocolumns 1524 is about 200~500 nanometers. Specifically, the plurality of nanopillars 1524 are made of metal, such as copper, nickel, etc. Metal materials have better ductility and can be slightly deformed during the binding process to achieve better bonding and are less likely to be damaged. The microelectronic component 20 provided in this embodiment is provided with a structure of multiple nanopillars 1524, which can be used to set the insertion electrode on the binding substrate to have the same structure as the receiving electrode 15 in this embodiment. Through the mutual interaction between the nanopillars, Interspersed to achieve stable binding, a repair solution similar to the aforementioned second embodiment is implemented. In this embodiment, the plurality of nano-columns 1524 accommodating the fixed structure 152 can be metal materials such as copper and nickel, or weldable materials such as tin, nickel, copper, indium, bismuth or alloys thereof. In conjunction with the arrangement of the inserted electrodes on the binding substrate, non-heated welding bonding or heated welding bonding can be implemented. The settings can be made according to actual needs, and this embodiment is not limited thereto. Using the structure of the microelectronic component 20 provided in this embodiment, heating and welding can be performed only after the last transfer during the entire transfer and repair process, or no welding is required, and there is no need to perform the single-point heating and welding of the aforementioned related technologies, which will not affect the The quality of the surrounding solder joints. And during the repair process, you only need to clear the Micro With LED, there is no need to carry out the process of removing the adhesive layer and replenishing the adhesive material in the aforementioned related technologies, making the repair process simpler and more feasible.

[Fifth Embodiment] As shown in Figure 10, the fifth embodiment of the present application provides a binding backplane 30, which includes a binding substrate 12 and a receiving electrode 15. The receiving electrode 15 is electrically connected to the microelectronic device 11 . The receiving electrode 15 has a conductive base 151 and a receiving and fixing structure 152 provided on the conductive base 151 . The accommodating and fixing structure 152 can be inserted into an insertion electrode on a microelectronic device and fix the insertion electrode 16 so that the microelectronic device can be bound to the binding substrate 12 .

The binding substrate 12 is, for example, a Micro LED driver circuit board. For example, when used to bind flip-chip Micro LEDs, two receiving electrodes 15 are provided on the binding substrate 12 corresponding to one Micro LED chip. A plurality of receiving electrodes 15 capable of binding a plurality of Micro LED chips are provided on the binding substrate 12 . When used to bind vertical Micro LED chips, a receiving electrode 15 is provided on the binding substrate 12 corresponding to a Micro LED binding position. As shown in FIG. 10 , only two sets of receiving point electrodes 15 on the binding substrate 12 for binding two Micro LEDs are shown, one of which is, for example, a backup electrode of the other group. The conductive substrate 151 may be, for example, a bonding pad material on a Micro LED driving circuit board, such as one or a combination of copper, nickel, gold, silver and other metals, with a thickness ranging from about 1 to 2 microns. The accommodating fixed structure 152 includes an accommodating cavity 1525 or a flexible structure 1522 . For example, referring to FIG. 10 , the accommodating and fixing structure 152 includes a conductive side wall 1521 , a flexible structure 1522 and a conductive sheet 1523 . The first conductive sidewall 1521 encloses a filling cavity 1526 on the first conductive base 151 and is electrically connected to the conductive base 151 . Flexible structure 1522 fills filling cavity 1526. The conductive sheet 1523 covers the side of the accommodating fixed structure 152 away from the conductive base 151 , and the conductive sheet 1523 is electrically connected to the conductive side wall 1521 . The conductive base 151, the conductive sidewalls 1521 and the conductive sheet 1523 are all made of metal materials, such as one or a combination of copper, nickel, gold, silver and other metals. The conductive base 151 , the conductive sidewall 1521 and the conductive sheet 1523 can be made of the same metal material or different metal materials. When they are made of the same metal material, their thermal expansion coefficients are consistent and the binding effect is better. The flexible structure 1522 may be, for example, a soft material such as silicone, resin, or photoresist. The hardness of the flexible structure 1522 may be, for example, 40 to 80 HA (Shore A hardness). The thickness of the conductive sidewall 1521 and the flexible structure 1522 is about 1 to 2 microns, and the thickness of the conductive sheet 1523 is less than 1 micron, for example, between 300 and 500 nanometers. The thinner thickness makes it easy to be bound to the inserted electrode on the substrate. Plug in and connect electrically. The insertion electrode on the microelectronic device is arranged in a spike shape to make the combination easier. The binding backplate 30 provided in this embodiment can implement a repair method similar to that described in the first embodiment. During the entire transfer repair process, heating and welding can only be performed after the last transfer, without the need for single-point heating of the aforementioned related technologies. Welding will not affect the quality of the surrounding solder joints. And during the repair process, you only need to clear the Micro With LED, there is no need to carry out the process of removing the adhesive layer and replenishing the adhesive material in the aforementioned related technologies, making the repair process simpler and more feasible.

[Sixth Embodiment] As shown in Figure 11, the sixth embodiment of the present application provides a binding backplane 30, which includes a binding substrate 12 and a receiving electrode 15. The receiving electrode 15 is electrically connected to the microelectronic device 11 . The receiving electrode 15 has a conductive base 151 and a receiving and fixing structure 152 provided on the conductive base 151 . The accommodating and fixing structure 152 can be inserted into an insertion electrode on a microelectronic device and fix the insertion electrode 16 so that the microelectronic device can be bound to the binding substrate 12 .

The binding substrate 12 is, for example, a Micro LED driver circuit board. For example, when used to bind flip-chip Micro LEDs, two receiving electrodes 15 are provided on the binding substrate 12 corresponding to one Micro LED chip. A plurality of receiving electrodes 15 capable of binding a plurality of Micro LED chips are provided on the binding substrate 12 . When used to bind vertical Micro LED chips, a receiving electrode 15 is provided on the binding substrate 12 corresponding to a Micro LED binding position. As shown in FIG. 11 , only two sets of receiving point electrodes 15 on the binding substrate 12 for binding two Micro LEDs are shown, one of which is, for example, a backup electrode of the other group. The conductive substrate 151 may be, for example, a bonding pad material on a Micro LED driving circuit board, such as one or a combination of copper, nickel, gold, silver and other metals, with a thickness ranging from about 1 to 2 microns.

Referring to FIG. 11 , in this embodiment, the accommodating and fixed structure 152 includes, for example, a plurality of nanopillars 1524 , and the plurality of nanopillars 1524 are disposed on a side of the conductive substrate 151 away from the microelectronic device 11 . The plurality of nano-columns 1524 are spaced apart from each other, and the gaps between the plurality of nano-columns 1524 form accommodating cavities 1525 for accommodating electrodes inserted on the microelectronic device. Among the plurality of nano-columns 1524, the height of each nano-column 1524 is, for example, 2 to 3 microns (the overall thickness of the receiving electrode 15 is 3 to 4 microns), and the width (or diameter) of each nano column 1524 is, for example, 200 to 200 microns. Between 500 nanometers, the gap between two adjacent nanocolumns 1524 is basically equal to the width of each nanocolumn 1524, that is, the gap between two adjacent nanocolumns 1524 is about 200~500 nanometers. Specifically, the plurality of nanopillars 1524 are made of metal, such as copper, nickel, etc. Metal materials have better ductility and can be slightly deformed during the binding process to achieve better bonding and are less likely to be damaged. The binding backplate 30 provided in this embodiment is provided with a structure of multiple nano-columns 1524, which can be used to set the insertion electrode on the microelectronic device to have the same structure as the receiving electrode 15 in this embodiment, and can pass between the nano-columns 1524. The mutual interpenetration achieves stable binding and implements a repair solution similar to the aforementioned second embodiment. In this embodiment, the plurality of nano-columns 1524 accommodating the fixed structure 152 can be made of metal materials such as copper and nickel, or weldable metal materials such as tin, nickel, copper, indium, bismuth or alloys thereof. In conjunction with the arrangement of the inserted electrodes on the microelectronic device, non-heated welding bonding or heated welding bonding can be implemented. The settings can be made according to actual needs, and this embodiment is not limited thereto. Using the structure of the binding backplate 30 provided in this embodiment, heating and welding can be performed only after the last transfer during the entire transfer repair process, or no welding is required, and there is no need to perform the single-point heating and welding of the aforementioned related technologies, which will not affect the to the surrounding solder joint quality. And during the repair process, you only need to clear the Micro With LED, there is no need to carry out the process of removing the adhesive layer and replenishing the adhesive material in the aforementioned related technologies, making the repair process simpler and more feasible.

The above are only preferred embodiments of the present application and are not intended to limit the present application in any form. Although the preferred embodiments of the present application have been disclosed above, they are not intended to limit the present application. Anyone familiar with this field will Skilled personnel, without departing from the scope of the technical solution of this application, can use the technical content disclosed above to make some changes or modifications into equivalent embodiments with equivalent changes. However, without departing from the content of the technical solution of this application, according to the Technical Substance Any simple modifications, equivalent changes and modifications made to the above embodiments still fall within the scope of the technical solution of the present application.

Industrial applicability

Type the industrial usefulness description paragraph here.

Sequence Listing Free Content

Type the sequence listing free content description paragraph here.

Claims

A binding component (10) consisting of:

Microelectronics (11);

binding substrate(12);

A first fitting electrode (13) is provided on one side of the microelectronic device (11) and is electrically connected to the microelectronic device (11);

A second embedded electrode (14) is provided on one side of the binding substrate (12) and is electrically connected to the binding substrate (12);

Wherein, the first embedded electrode (13) and the second embedded electrode (14) can be embedded with each other so that the microelectronic device (11) can be bound to the binding substrate (12); At least one of the first chimeric electrode (13) and the second chimeric electrode (14) serves as a receiving electrode (15), and the other serves as an insertion electrode (16); the receiving electrode (15) It includes a conductive base (151) and an accommodating and fixing structure (152) provided on the conductive base (151). The accommodating and fixing structure (152) can be inserted by the insertion electrode (16) and fix the insertion. electrode (16).
The binding assembly (10) of claim 1, wherein the receiving and fixing structure (152) includes a receiving cavity (1525) or a flexible structure (1522).
The binding assembly (10) of claim 2, wherein the accommodation and fixing structure (152) includes: a plurality of nano-columns (1524), the plurality of nano-columns (1524) are spaced apart from each other, and the The gaps between the plurality of nanopillars (1524) form the accommodation cavity (1525) for accommodating the insertion electrode (16).
The binding assembly (10) according to claim 3, wherein the first chimeric electrode (13) and the second chimeric electrode (14) have the same structure, and the second chimeric electrode (14) The gap distance between any two adjacent nano-columns (1524) is equal to the width of each nano-column (1524) on the first chimeric electrode (13).
The binding assembly (10) of claim 4, wherein the second chimeric electrode (14) and the plurality of nanopillars (1524) of the first chimeric electrode (13) are of the same type. metallic material.
The binding assembly (10) of claim 2, wherein the accommodation and fixation structure (152) includes a conductive side wall (1521), the flexible structure (1522) and a conductive sheet (1523); A conductive sidewall (1521) encloses a filling cavity (1526) on the first conductive base (151) and is electrically connected to the conductive base (151); the flexible structure (1522) is filled in the In the filling cavity (1526); the conductive sheet (1523) covers the side of the accommodation fixed structure (152) away from the conductive base (151), the conductive sheet (1523) and the conductive side wall (1521) Electrical connection.
The binding assembly (10) of claim 6, wherein said insertion electrode (16) includes:

solder layer(161);

Conductive spikes (162) are provided on one side of the solder layer (161). The conductive spikes (162) can penetrate the conductive sheet (1523) and penetrate into the flexible structure (1522) to It is electrically connected to the receiving electrode (15) through the conductive sheet (1523).
The binding assembly (10) of claim 6, wherein the conductive base (151), the conductive sidewall (1521) and the conductive sheet (1523) are made of the same metal material.
The binding assembly (10) of claim 6, wherein the thickness of the conductive sheet (1523) is less than 1 micron.
A miniature electronic component (20) comprising:

Microelectronics (11);

The receiving electrode (15) is electrically connected to the microelectronic device (11). The receiving electrode (15) has a conductive base (151) and a receiving and fixing structure (152) provided on the conductive base (151), The accommodation and fixation structure (152) can be inserted into and fixed by an insertion electrode on a binding substrate; so that the microelectronic device (11) can be bound to the binding substrate.
The microelectronic component (20) of claim 10, wherein the receiving and fixing structure (152) includes a conductive side wall (1521), a flexible structure (1522) and a conductive sheet (1523); the conductive side wall (1521) A filling cavity (1526) is formed on the conductive substrate (151) and is electrically connected to the conductive substrate (151); the flexible structure (1522) is filled in the filling cavity (1526) ; The conductive sheet (1523) covers the side of the accommodating and fixed structure (152) away from the conductive base (151), and the conductive sheet (1523) is electrically connected to the conductive side wall (1521).
. The microelectronic component (20) according to claim 10, wherein the accommodation and fixing structure (152) further includes a plurality of nanopillars (1524), which are arranged on the conductive base (151) away from the microelectronics. On one side of the device (11); the plurality of nano-columns (1524) are spaced apart from each other, and the gaps between the plurality of nano-columns (1524) form an accommodation cavity (1525) for accommodating the inserted electrode.
A binding backplane (30), including:

binding substrate(12);

The receiving electrode (15) is electrically connected to the microelectronic device (11). The receiving electrode (15) has a conductive base (151) and a receiving and fixing structure (152) provided on the conductive base (151), The accommodation and fixation structure (152) can be inserted into and fixed by an insertion electrode on a microelectronic device; so that the microelectronic device can be bound to the binding substrate (12).
The binding backplate (30) of claim 13, wherein the accommodation and fixing structure (152) includes a conductive side wall (1521), a flexible structure (1522) and a conductive sheet (1523); the conductive side The wall (1521) encloses a filling cavity (1526) on the conductive base (151) and is electrically connected to the conductive base (151); the flexible structure (1522) is filled in the filling cavity (1526) in; the conductive sheet (1523) covers the side of the accommodation fixed structure (152) away from the conductive base (151), and the conductive sheet (1523) is electrically connected to the conductive side wall (1521) .
The binding backplane (30) of claim 13, wherein the receiving electrode (15) further includes: a plurality of nanopillars (1524) disposed on the conductive substrate (151) away from the microelectronic device One side of (11); the plurality of nano-columns (1524) are spaced apart from each other, and the gaps between the plurality of nano-columns (1524) form the space for accommodating the inserted electrode. Accommodation cavity (1525).