CN112968109A - Driving back plate and manufacturing method thereof - Google Patents
Driving back plate and manufacturing method thereof Download PDFInfo
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- CN112968109A CN112968109A CN202011366832.7A CN202011366832A CN112968109A CN 112968109 A CN112968109 A CN 112968109A CN 202011366832 A CN202011366832 A CN 202011366832A CN 112968109 A CN112968109 A CN 112968109A
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- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000010410 layer Substances 0.000 claims description 257
- 229920002120 photoresistant polymer Polymers 0.000 claims description 31
- 238000005272 metallurgy Methods 0.000 claims description 21
- 239000003292 glue Substances 0.000 claims description 20
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- 238000004026 adhesive bonding Methods 0.000 claims description 4
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- 229920003055 poly(ester-imide) Polymers 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920001225 polyester resin Polymers 0.000 claims description 3
- 239000004645 polyester resin Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- 229920005749 polyurethane resin Polymers 0.000 claims description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention discloses a driving back plate and a manufacturing method thereof, wherein the driving back plate comprises a substrate, a lower metal layer with salient points and a micro-structural layer, wherein the lower metal layer with the salient points is arranged on the substrate and is used for butting an LED chip; the microstructure layer is arranged on the substrate and is attached to the side wall of the lower metal layer of the salient point; the upper surface of the micro-structure layer is higher than the upper surface of the lower metal layer of the salient point. When the driving back plate is installed, the LED chip is in butt joint with the lower metal layer of the salient point, the electrode of the LED chip and the lower metal layer of the salient point are wrapped by the micro-structural layer in the bonding process, the flowing of bonding metal in a molten state is limited, and the short circuit problem on the driving back plate is reduced.
Description
Technical Field
The invention relates to the technical field of display equipment, in particular to a driving back plate and a manufacturing method thereof.
Background
With the progress of display technology, a display panel with higher brightness, better Light Emitting efficiency and lower power consumption is increasingly required on a display device to meet the requirements of people, so that a new generation chip technology such as a Micro LED (Light Emitting Diode) chip technology has a good development prospect. In the Micro LED chip technology, a large number of micron-sized light emitting diode chips are grown on a growth substrate, then the light emitting diode chips are transferred and bonded to a driving backboard through mass transfer, the manufacturing process is completed, and a plurality of salient point lower metal layers are arranged on the corresponding driving backboard and are bonded with electrodes of the light emitting diode chips.
However, in the process of bonding the led chip and the driving backplane during mass transfer, the under bump metallurgy layer for bonding is easily melted by high temperature and high pressure and then flows, and the space between adjacent solder bumps in the under bump metallurgy layer is small, and the space between adjacent under bump metallurgy layers is also small, so that the adhesion inside the under bump metallurgy layer is easily caused, and the problem of short circuit is easily caused
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, the present invention provides a driving back plate and a manufacturing method thereof, which aims to solve the problem of short circuit generated during the bonding process between the driving back plate and the LED chip.
The technical scheme of the invention is as follows:
a driving backplate, wherein the driving backplate comprises:
a substrate;
the lower metal layer of the salient point is arranged on the substrate and is used for butting the LED chip; and
the microstructure layer is arranged on the substrate and is attached to the side wall of the lower metal layer of the salient point; the upper surface of the micro-structure layer is higher than the upper surface of the lower metal layer of the salient point.
The driving back plate, wherein the under bump metal layer comprises a plurality of first contact metal blocks and a plurality of second contact metal blocks alternately arranged on the substrate, and the first contact metal blocks are butted with the positive electrodes of the LED chips; the second contact metal block is butted with the negative electrode of the LED chip; the microstructure layer comprises a first current limiting structure, and the first current limiting structure is arranged between the adjacent first contact metal block and the second contact metal block.
The driving back plate, wherein the micro-structure layer further comprises a second current limiting structure and a third current limiting structure, and the second current limiting structure is attached to one side of the first contact metal block, which is far away from the second contact metal block; the third current limiting structure is attached to one side, deviating from the first contact metal block, of the second contact metal block.
The driving back plate is characterized in that the microstructure layer is a heat-shrinkable material layer.
The driving back plate is characterized in that the microstructure layer is an insulating glue layer.
The driving backboard is characterized in that the insulating glue layer comprises one or more of a polyester resin layer, an epoxy resin layer, a polyurethane resin layer, a polybutadiene resin layer, a silicone resin layer, a photoresist layer, a polyester-imide resin layer and a polyimide resin layer.
The driving backboard is characterized in that the height difference between the upper surface of the micro-structure layer and the upper surface of the under bump metal layer is less than or equal to 2 microns.
The driving back plate is characterized in that the substrate comprises a conductive layer and an insulating layer, the under bump metal layer is arranged on the insulating layer, and the conductive layer is arranged on one side of the insulating layer, which is far away from the under bump metal layer; the insulating layer is provided with a through hole for communicating the under bump metal layer with the conductive layer; the under bump metal layer comprises a connecting part and a protruding part, the connecting part is arranged in the through hole, one end of the connecting part is connected with the conducting layer, and the other end of the connecting part is connected with the protruding part; the cross section area of the bulge part is larger than that of the through hole; the bulge protrudes out of the surface of the insulating layer, and the microstructure layer is attached to the side wall of the bulge.
The application also discloses a manufacturing method of the driving back plate, which is used for manufacturing the driving back plate, and the manufacturing method comprises the following steps:
providing a substrate, and growing a lower metal layer of a salient point on the substrate;
and growing a microstructure layer around the under bump metal layer to obtain the driving backboard.
The manufacturing method of the driving back plate, wherein the growing of the microstructure layer around the under bump metal layer specifically comprises:
gluing one side of the substrate, on which the under-bump metal layer is arranged, to form a first glue layer wrapping the under-bump metal layer;
and removing the first adhesive layer covering the upper part of the under-bump metal layer to form a micro-structural layer.
The manufacturing method of the driving back plate, wherein the first adhesive layer covering the bump lower metal layer is removed to form a micro-structural layer, and the method specifically comprises the following steps:
spraying photoresist on one side of the first adhesive layer, which is far away from the substrate, to form a photoresist layer;
illuminating and etching the photoresist layer positioned above the lower metal layer of the salient point, removing the photoresist above the lower metal layer of the salient point and exposing the first photoresist layer above the lower metal layer of the salient point;
and etching the first adhesive layer above the under-bump metal layer to obtain the microstructure layer.
The manufacturing method of the driving back plate, wherein after the first glue layer above the under bump metal layer is etched away, the method further comprises the following steps:
and removing the photoresist layer by using a buffered oxide etching solution.
Compared with the prior art, the embodiment of the invention has the following advantages:
the utility model provides a drive backplate is when carrying out the huge transfer, dock the LED chip on the metal level under the bump, the side of metal level all wraps up under the bump in the bonding process micro-structure layer, because the upper surface of micro-structure layer is higher than the upper surface of metal level under the bump, so be used for the welded block of bonding under the bump in the metal level after the melting under high temperature high pressure state, can be restricted by micro-structure layer in the original position, can not flow to the side, prevent the bonding in-process bump in the metal level in the bump adhesion of welded block, reduce the emergence of short circuit problem on the drive backplate.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a driving backplate according to the present invention;
FIG. 2 is an assembly view of the driving back plate and the LED chip of the present invention;
FIG. 3 is a schematic view of a driving backplate structure in the manufacturing process of the driving backplate according to the present invention;
FIG. 4 is a flow chart of a method for manufacturing a driving backplate according to the present invention。
10, a substrate; 11. a conductive layer; 12. an insulating layer; 121. a through hole; 20. a bump lower metal layer; 21. a connecting portion; 22. a boss portion; 23. a first contact metal block; 24. a second contact metal block; 30. a microstructure layer; 31. a first current limiting structure; 32. a second current limiting structure; 33. a third current limiting structure; 40. a first glue layer; 50. a photoresist layer; 60. and an LED chip.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
At present, Micro LED technology, as a new generation display technology, has higher brightness, better Light Emitting efficiency, but lower power consumption than the existing Organic Light-Emitting Diode (OLED) technology, and is more worthy of popularization and application. The Micro LED technology is realized by growing a flip LED chip on a growth substrate, bonding the LED chip with a driving backboard, and welding the electrodes of the LED chip with the lower metal layer of the salient points on the driving backboard by melting to manufacture the display panel. The biggest process bottleneck in Micro LEDs is the bulk transfer technology, and one of the most critical steps in the bulk transfer technology is Bonding of the Micro LED Chip to an Under Bump Metal (UBM) of the driving backplane. Because the distance between the N-type electrode and the P-type electrode of the Micro LED chip is generally smaller than or equal to 10 micrometers at present, the problems of short circuit and displacement open circuit are easily caused in the UBM bonding process of the electrode of the Micro LED chip and a backboard by the conventional bonding method and technology, and great yield loss is caused.
Referring to fig. 1, an embodiment of the present application discloses a driving backplate, wherein the driving backplate includes: the LED chip comprises a substrate 10, an under bump metal layer 20 and a microstructure layer 30, wherein the under bump metal layer 20 is arranged on the substrate 10 and is used for butting an LED chip 60; the microstructure layer 30 is arranged on the substrate 10 and is attached to the side wall of the under bump metal layer 20; the upper surface of the microstructure layer 30 is higher than the upper surface of the under bump metallurgy layer 20.
The utility model provides a drive backplate is when carrying out the bulk transfer, as shown in fig. 2, dock LED chip 60 on metal level 20 under the bump, micro-structure layer 30 wraps up the side of metal level 20 under the bump in the bonding process, because the upper surface of micro-structure layer 30 is higher than the upper surface of metal level 20 under the bump, so be used for the bonding in the metal level 20 under the bump behind the welding block melting under the high temperature high pressure state, can be restricted in the original position by micro-structure layer 30, can not flow to the side, prevent the bonding of welding block in the metal level 20 under the bump in the bonding process, reduce the emergence of short circuit problem on the drive backplate. In addition, the structure of the micro-structure layer 30 higher than the under bump metal layer 20 forms the mounting position of the LED chip 60 above the under bump metal layer 20, and the LED chip 60 can be mounted on the driving back plate under the auxiliary positioning effect, so that the mounting of the LED chip 60 is completed quickly, the dislocation phenomenon is reduced, and the manufacturing speed is increased.
As shown in fig. 2, as an implementation manner of the present embodiment, it is disclosed that the under bump metallurgy 20 includes a plurality of first contact metal blocks 23 and a plurality of second contact metal blocks 24 alternately disposed on the substrate 10, and the first contact metal blocks 23 are butted with positive electrodes of LED chips; the second contact metal block 24 is butted with the negative electrode of the LED chip; the microstructure layer 30 includes a first current limiting structure 31, and the first current limiting structure 31 is disposed between the adjacent first contact metal block 23 and the second contact metal block 24. Through setting up first current-limiting structure 31, separate first contact metal piece 23 and second contact metal piece 24, after first contact metal piece 23 and second contact metal piece 24 are in welding process melting, be stopped by first current-limiting structure 31, mutual separation for first contact metal piece 23 and second contact metal piece 24 can not take place the adhesion, have avoided circuit fault's such as short circuit or open circuit emergence.
As shown in fig. 2, as an implementation manner of this embodiment, it is disclosed that the microstructure layer 30 further includes a second current limiting structure 32 and a third current limiting structure 33, where the second current limiting structure 32 is attached to a side of the first contact metal block 23 facing away from the second contact metal block 24; the third current limiting structure 33 is attached to the second contact metal block 24 on the side facing away from the first contact metal block 23. In the welding process, the first contact metal block 23 and the second contact metal block 24 are heated to be in a molten state, and flow is easy to generate, so that the welding height of the joint is insufficient, and poor contact can be generated; the second current limiting structure 32 is matched with the first current limiting structure 31, so that the first contact metal block 23 is limited to the original position after being melted; through the cooperation of the third current limiting structure 33 and the first current limiting structure 31, the second contact metal block 24 is limited at the original position after being melted, so that the situation that the first contact metal block 23 and the second contact metal block 24 in a molten state are displaced is effectively avoided, the heights of the first contact metal block 23 and the second contact metal block 24 at the joint are unchanged, and the normal connection in the welding process is maintained. Further, in an implementation manner of the present embodiment, in order to further ensure the welding effect, the microstructure layer 30 may be set as a heat-shrinkable material layer, that is, during the welding process, the first current limiting structure 31, the second current limiting structure 32, and the third current limiting structure 33 shrink to press the first contact metal block 23 and the second contact metal block 24, so that the welding position is slightly increased to achieve more sufficient contact with the electrode of the LED chip.
Referring to fig. 3(a) to (f), as an implementation manner of the present embodiment, it is disclosed that the substrate 10 includes a conductive layer 11 and an insulating layer 12, and the insulating layer 12 may be selected to be a silicon dioxide layer; the under bump metal layer 20 is arranged on the insulating layer 12, and the conductive layer 11 is arranged on one side of the insulating layer 12 departing from the under bump metal layer 20; a through hole 121 is formed in the insulating layer 12 and used for communicating the under bump metal layer 20 with the conductive layer 11; the under bump metal layer 20 comprises a connecting portion 21 and a protruding portion 22, the connecting portion 21 is disposed in the through hole 121, one end of the connecting portion 21 is connected to the conductive layer 11, and the other end of the connecting portion 21 is connected to the protruding portion 22; the cross-sectional area of the boss 22 is larger than that of the through-hole 121; the protruding portion 22 protrudes from the surface of the insulating layer 12, and the microstructure layer 30 is attached to the sidewall of the protruding portion 22. The under bump metal layer 20 is arranged in the through hole 121, so that the under bump metal layer 20 is not easy to move in the bonding process of the driving back plate and the LED chip 60, and the occurrence of open circuit in the bonding process is avoided; the insulating layer 12 is arranged between the conductive layer 11 and the under bump metal layer 20 to support the conductive circuit, and the LED chip 60 is only arranged on one side of the under bump metal layer 20 during bonding, so that the LED chip 60 is prevented from contacting the conductive layer 11. Silicon dioxide is chemically stable and structurally strong and can be used as a good carrier for conductive circuits and under bump metallurgy 20. The cross section area of the protruding portion 22 is larger, so that the contact area when the under bump metal layer 20 is bonded with the LED chip 60 is increased, the through hole 121 is shielded by the under bump metal layer 20, and glue does not enter the through hole 121 in the subsequent gluing process when the microstructure layer 30 is arranged.
Specifically, as an implementation manner of the present embodiment, it is disclosed that the microstructure layer 30 is an insulating glue layer. The insulating layer in the embodiment of the present application includes one or more of a polyester resin layer, an epoxy resin layer, a polyurethane resin layer, a polybutadienic acid resin layer, a silicone resin layer, a photoresist layer 50, a polyester imide resin layer, and a polyimide resin layer. The microstructure layer 30 is arranged on the substrate 10 and is simultaneously contacted with the side wall of the under bump metal layer 20 and the side wall of the electrode of the LED chip 60, an insulating material is used as an insulating adhesive layer, when the back plate is driven to conduct an electric signal, the insulating adhesive layer is not conductive, the structure can be equivalent to a protective sleeve structure, each adjacent under bump metal layer 20 is isolated, and the occurrence of short circuit is reduced; the insulating glue layer is not conductive, and the electric signal cannot be transmitted to the adjacent positive electrode and negative electrode of the LED chip 60 from the insulating glue layer, so that the normal luminescence of the chip cannot be influenced. The material of the insulating adhesive layer is a heat-shrinkable material, so that the insulating adhesive layer can be heated and shrunk in the bonding process, the flowable space of the solder bump is further reduced, the electrode of the LED chip 60 and the under bump metal layer 20 are aligned better, and a better bonding effect is realized.
Specifically, as an implementation manner of the present embodiment, it is disclosed that a height difference between the upper surface of the microstructure layer 30 and the upper surface of the under bump metal layer 20 is less than or equal to 2 micrometers. The structure that the microstructure layer 30 is higher than the under bump metal layer 20 forms a groove for accommodating an electrode of the LED chip 60 above the under bump metal layer 20, the depth of the groove is the height difference between the upper surface of the microstructure layer 30 and the upper surface of the under bump metal layer 20, the thickness of the electrode of the LED chip 60 is not large, so that the depth of the groove is not suitable to be set too large, when the height difference between the upper surface of the microstructure layer 30 and the upper surface of the under bump metal layer 20 is less than or equal to 2 micrometers, the electrode of the LED chip 60 is in good contact with the under bump metal layer 20, and the bonding yield is high; if the thickness is larger than 2 micrometers, the microstructure layer 30 may abut against the LED chip 60, so that the electrode of the LED chip 60 may not contact the under bump metal layer 20, and further, an open circuit may be caused, which affects the light emission of the LED chip 60, and meanwhile, the LED chip 60 is not firmly connected to the driving backplane, and is easy to fall off.
Referring to fig. 4, as another embodiment of the present application, a method for manufacturing a driving backplate is disclosed, which is used for manufacturing the driving backplate, and includes:
s10, providing a substrate 10, and growing an under bump metallurgy layer 20 on the substrate 10;
and S20, growing the microstructure layer 30 around the under bump metal layer 20 to obtain the driving backboard.
Specifically, as an implementation manner of this embodiment, the growing the microstructure layer 30 around the under bump metallurgy layer 20 specifically includes:
gluing one side of the substrate 10, on which the under bump metal layer 20 is arranged, to form a first glue layer 40 wrapping the under bump metal layer 20;
and removing the first adhesive layer 40 covering the under bump metal layer 20 to form the microstructure layer 30.
Specifically, as an implementation manner of this embodiment, it is disclosed that removing the first glue layer 40 covering the under bump metallurgy layer 20 to form the microstructure layer 30 specifically includes:
spraying photoresist on one side of the first adhesive layer 40, which is far away from the substrate 10, so as to form a photoresist layer 50;
illuminating and etching the photoresist layer 50 above the under bump metal layer 20, removing the photoresist above the under bump metal layer 20, and exposing the first photoresist layer 40 above the under bump metal layer 20;
and etching away the first adhesive layer 40 above the under bump metal layer 20 to obtain the microstructure layer 30.
By utilizing the characteristic that the photoresist can be used for patterning, the part of the photoresist layer 50 overlapped with the under bump metal layer 20 is firstly etched, the photoresist layer 50 above the under bump metal layer 20 is reserved, the first adhesive layer 40 above the under bump metal layer 20 is exposed, the first adhesive layer 40 above the under bump metal layer 20 is continuously etched, the first adhesive layer 40 on the side surface of the under bump metal layer 20 can be reserved, the microstructure layer 30 is formed, the operation method is simple, and the well-formed microstructure layer 30 can be obtained.
Specifically, as an implementation manner of this embodiment, after the etching away the first glue layer 40 above the under bump metal layer 20, the method further includes:
the photoresist layer 50 is removed using a buffered oxide etch solution.
In the embodiment, the method of growing the microstructure layer 30 on the substrate 10 having the under bump metal layer 20 reduces the phenomenon of short circuit caused by flowing around after the under bump metal layer 20 is melted and pressed in the bulk transfer process, and improves the processing yield of the bulk transfer.
As shown in fig. 3, as another embodiment of the present application, a method for manufacturing a driving backplate is disclosed, which is used for manufacturing the driving backplate, and includes:
as shown in fig. 3(a), a substrate 10 is provided, and an under bump metallurgy layer 20 is grown on the substrate 10;
as shown in fig. 3(b), a side of the substrate 10 on which the under bump metallurgy layer 20 is disposed is coated with glue to form a first glue layer 40 wrapping the under bump metallurgy layer 20;
as shown in fig. 3(c), a photoresist is sprayed on the side of the first glue layer 40 away from the substrate 10 to form a photoresist layer 50;
as shown in fig. 3(d), the photoresist layer 50 above the under bump metal layer 20 is irradiated and etched to remove the photoresist above the under bump metal layer 20 and expose the first photoresist layer 40 above the under bump metal layer 20;
as shown in fig. 3(e), the first glue layer 40 above the under bump metallurgy 20 is etched away;
as shown in fig. 3(f), the photoresist layer 50 is removed using a buffered oxide etchant, and the microstructure layer 30 is obtained.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (12)
1. A driving backplate, comprising:
a substrate;
the lower metal layer of the salient point is arranged on the substrate and is used for butting the electrode of the LED chip; and
the microstructure layer is arranged on the substrate and is attached to the side wall of the lower metal layer of the salient point; the upper surface of the micro-structure layer is higher than the upper surface of the lower metal layer of the salient point.
2. The driving backplane according to claim 1, wherein the under bump metallurgy layer comprises a plurality of first contact metal bumps and a plurality of second contact metal bumps alternately disposed on the substrate, the first contact metal bumps interfacing with positive electrodes of the LED chips; the second contact metal block is butted with the negative electrode of the LED chip;
the microstructure layer comprises a first current limiting structure, and the first current limiting structure is arranged between the adjacent first contact metal block and the second contact metal block.
3. The driving backplate of claim 2, wherein the microstructure layer further comprises a second current limiting structure and a third current limiting structure, the second current limiting structure being attached to a side of the first contact metal block facing away from the second contact metal block; the third current limiting structure is attached to one side, deviating from the first contact metal block, of the second contact metal block.
4. The driving backplate of claim 1, wherein the microstructure layer is a layer of heat shrink material.
5. The driving backplate of claim 1, wherein the microstructure layer is an insulating glue layer.
6. The driving backplate of claim 5, wherein the layer of insulating glue comprises one or more of a layer of polyester resin, a layer of epoxy resin, a layer of polyurethane resin, a layer of polybutadienic acid resin, a layer of silicone resin, a layer of photoresist, a layer of polyester imide resin, a layer of polyimide resin.
7. The driving backplate of claim 1, wherein the difference in height between the upper surface of the microstructure layer and the upper surface of the under bump metallurgy layer is less than or equal to 2 μm.
8. The driving backplate of claim 1, wherein the substrate comprises a conductive layer and an insulating layer, the under bump metallurgy layer is disposed on the insulating layer, and the conductive layer is disposed on a side of the insulating layer facing away from the under bump metallurgy layer; the insulating layer is provided with a through hole for communicating the under bump metal layer with the conductive layer;
the under bump metal layer comprises a connecting part and a protruding part, the connecting part is arranged in the through hole, one end of the connecting part is connected with the conducting layer, and the other end of the connecting part is connected with the protruding part; the cross section area of the bulge part is larger than that of the through hole; the bulge protrudes out of the surface of the insulating layer, and the microstructure layer is attached to the side wall of the bulge.
9. A method for manufacturing a driving backplate according to any one of claims 1 to 8, comprising:
providing a substrate, and growing a lower metal layer of a salient point on the substrate;
and growing a microstructure layer around the under bump metal layer to obtain the driving backboard.
10. The method of claim 9, wherein growing a microstructure layer around the under bump metallurgy layer comprises:
gluing one side of the substrate, on which the under-bump metal layer is arranged, to form a first glue layer wrapping the under-bump metal layer;
and removing the first adhesive layer covering the upper part of the under-bump metal layer to form a micro-structural layer.
11. The method for manufacturing a driving backplate according to claim 10, wherein the removing the first adhesive layer covering the under bump metallurgy layer to form a microstructure layer comprises:
spraying photoresist on one side of the first adhesive layer, which is far away from the substrate, to form a photoresist layer;
illuminating and etching the photoresist layer positioned above the lower metal layer of the salient point, removing the photoresist above the lower metal layer of the salient point and exposing the first photoresist layer above the lower metal layer of the salient point;
and etching the first adhesive layer above the under-bump metal layer to obtain the microstructure layer.
12. The method for manufacturing a driving back plate according to claim 11, wherein after etching the first glue layer over the under bump metallurgy layer, the method further comprises:
and removing the photoresist layer by using a buffered oxide etching solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011366832.7A CN112968109A (en) | 2020-11-27 | 2020-11-27 | Driving back plate and manufacturing method thereof |
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| CN114203725A (en) * | 2021-11-11 | 2022-03-18 | 深圳市思坦科技有限公司 | Micro light-emitting diode display panel and preparation method thereof |
| WO2023077504A1 (en) * | 2021-11-08 | 2023-05-11 | 重庆康佳光电技术研究院有限公司 | Chip structure, chip structure manufacturing method, and chip transfer method |
| WO2023077545A1 (en) * | 2021-11-02 | 2023-05-11 | 武汉华星光电半导体显示技术有限公司 | Tiled display panel and display device |
| WO2023097779A1 (en) * | 2021-11-30 | 2023-06-08 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN114203725B (en) * | 2021-11-11 | 2024-06-11 | 深圳市思坦科技有限公司 | Micro light-emitting diode display panel and preparation method thereof |
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