CN111864037B - Micro-element array substrate, display panel and preparation method thereof - Google Patents

Micro-element array substrate, display panel and preparation method thereof Download PDF

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Publication number
CN111864037B
CN111864037B CN201910342736.XA CN201910342736A CN111864037B CN 111864037 B CN111864037 B CN 111864037B CN 201910342736 A CN201910342736 A CN 201910342736A CN 111864037 B CN111864037 B CN 111864037B
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solder
substrate
pad
micro light
defining unit
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CN111864037A (en
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陈波
邢汝博
杨小龙
陈博
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Chengdu Vistar Optoelectronics Co Ltd
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Chengdu Vistar Optoelectronics Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

The invention discloses a micro-element array substrate, a display panel and a preparation method thereof. The micro-component array substrate includes: a first substrate; the micro light-emitting diode array is arranged on the first substrate and comprises a plurality of micro light-emitting diodes distributed in an array mode, a first bonding pad and a solder defining unit are arranged on the surface, deviating from the first substrate, of at least part of the micro light-emitting diodes, and the solder defining unit is arranged on the outer peripheral side of the first bonding pad. The micro-element array substrate provided by the invention has a stable structure, is easy to strip the first substrate, and can effectively protect the first bonding pad.

Description

Micro-element array substrate, display panel and preparation method thereof
Technical Field
The invention relates to the technical field of display, in particular to a micro-element array substrate, a display panel and a preparation method of the display panel.
Background
Micro light emitting diode display (Micro-LED) technology refers to a technology of implementing light emitting display with a high-density integrated Micro light emitting diode array as pixels on a substrate. Currently, Micro-LED technology is becoming a popular research, and industry expects high-quality Micro-LED products to enter the market. High quality Micro-LED products have a profound impact on existing display products on the market, such as LCD (liquid crystal display)/OLED (organic light emitting diode display). However, due to the small size of micro-leds and the small pitch between adjacent micro-leds, there are many difficulties in manufacturing micro-leds, such as the lift-off process of the substrate.
Disclosure of Invention
The embodiment of the invention provides a micro-element array substrate, a display panel and a preparation method, wherein the micro-element array substrate is stable in structure, a first substrate is easy to strip, and a first bonding pad can be effectively protected.
In a first aspect, there is provided a micro device array substrate according to an embodiment of the present invention, including: the micro light-emitting diode array is arranged on the first substrate and comprises a plurality of micro light-emitting diodes distributed in an array mode, a first bonding pad and a solder defining unit are arranged on the surface, deviating from the first substrate, of at least part of the micro light-emitting diodes, and the solder defining unit is arranged on the periphery side of the first bonding pad.
According to an aspect of the present invention, the micro-component array substrate further includes a plurality of solders, the solder defining unit forms an accommodating space around an outer circumferential side of the first pad, and the solders are disposed in the accommodating space; alternatively, the solder defining cells are made of a photosensitive paste.
According to one aspect of the invention, the solder defines a thickness h of the cell 1 Thickness h of the first bonding pad 3 And the thickness h of the solder 5 Satisfies the following conditions: h is 1 -h 3 ≤h 5
According to one aspect of the invention, the solder defines a thickness h of the cell 1 Thickness h of the first bonding pad 3 And the thickness h of the solder 5 Satisfies the following conditions: h is 5 /3≤h 1 -h 3 ≤2h 5 /3。
In a second aspect, an embodiment of the present invention provides a display panel, including: the micro light-emitting diode array comprises a plurality of micro light-emitting diodes distributed in an array, a first bonding pad and a solder defining unit, wherein at least part of the surfaces of the micro light-emitting diodes are provided with the first bonding pad, and the solder defining unit is arranged on the outer peripheral side of the first bonding pad; the driving circuit substrate is arranged opposite to the micro light-emitting diode array and is electrically connected with the micro light-emitting diode array through welding flux, the driving circuit substrate is provided with a connecting surface which faces the micro light-emitting diode array and is provided with a plurality of second bonding pads, the second bonding pads are distributed in an array manner, and at least part of the second bonding pads are overlapped with the first bonding pads in the projection of the thickness direction of the display panel; the solder limiting unit is connected with the connecting surface, the solder is arranged between the first pad and the second pad which are overlapped in projection in the thickness direction of the display panel, and the first pad and the second pad are electrically connected through the solder.
According to one aspect of the invention, the driving circuit substrate further comprises a dielectric layer, the solder defining unit is connected with the connection surface through the dielectric layer, and the solder penetrates through the dielectric layer and is electrically connected with the second pad on the connection surface. Optionally, the dielectric layer is a non-conductive insulating film.
In a third aspect, an embodiment of the present invention provides a method for manufacturing a micro light emitting diode array substrate, including: forming a micro light-emitting diode array on a first substrate, wherein the micro light-emitting diode array comprises a plurality of micro light-emitting diodes distributed in an array manner, and a first bonding pad is arranged on the surface of at least part of the micro light-emitting diodes, which is far away from the first substrate; forming a solder defining unit on the micro light emitting diode, wherein the solder defining unit is arranged on the outer periphery side of the first bonding pad; solder is formed on the side of the first pad facing away from the first substrate.
In a fourth aspect, an embodiment of the present invention provides a method for manufacturing a display panel, including: forming a micro light-emitting diode array on a first substrate, wherein the micro light-emitting diode array comprises a plurality of micro light-emitting diodes distributed in an array manner, and a first bonding pad is arranged on the surface of at least part of the micro light-emitting diodes, which is far away from the first substrate; forming a solder defining unit on the micro light emitting diode, wherein the solder defining unit is arranged on the outer periphery side of the first bonding pad; forming solder on the side of the first pad, which is far away from the first substrate; providing a driving circuit substrate, wherein the driving circuit substrate is provided with a connecting surface which faces to the first substrate and is provided with a plurality of second bonding pads, and the second bonding pads are distributed in an array; turning over and aligning the first substrate, the micro light-emitting diode array, the solder defining unit and the solder so that at least part of the second bonding pad overlaps with the projection of the first bonding pad in the thickness direction; electrically connecting the first pad and the second pad through solder, wherein the solder defining unit is connected with the connecting surface; and stripping the first substrate to form the display panel comprising the micro light-emitting diode array, the solder defining unit and the connecting surface.
According to an aspect of the present invention, a driving circuit substrate is provided, the driving circuit substrate has a connection surface facing a first substrate and provided with a plurality of second pads, and the step of distributing the plurality of second pads in an array further includes: and forming a dielectric layer on the connecting surface, wherein the dielectric layer covers the second bonding pad.
According to an aspect of the present invention, the step of forming a solder defining unit on the first substrate, the solder defining unit being disposed on an outer peripheral side of the first pad, includes: coating a first solution on a first substrate, and curing to form a first layer structure; and patterning the first layer structure to form a solder defining unit.
In a fifth aspect, an embodiment of the present invention provides a method for manufacturing a display panel, including: forming a micro light-emitting diode array on a first substrate, wherein the micro light-emitting diode array comprises a plurality of micro light-emitting diodes distributed in an array manner, and a first bonding pad is arranged on the surface of at least part of the micro light-emitting diodes, which is far away from the first substrate; providing a driving circuit substrate, wherein the driving circuit substrate is provided with a connecting surface which faces to the first substrate and is provided with a plurality of second bonding pads, and the second bonding pads are distributed in an array; forming a solder defining unit on the connection surface, the solder defining unit being disposed on an outer peripheral side of the second pad; forming solder on one side of the second bonding pad, which is far away from the connecting surface; overturning and aligning the first substrate and the micro light-emitting diode array so that at least part of the second bonding pad is overlapped with the projection of the first bonding pad in the thickness direction; electrically connecting the first bonding pad and the second bonding pad through solder, wherein the solder limiting unit is connected with the surface of the micro light-emitting diode, which is far away from the first substrate; and stripping the first substrate to form the display panel comprising the micro light-emitting diode array, the solder defining unit and the connecting surface.
In the micro-component array substrate provided by the embodiment of the invention, the solder defining unit is arranged on the surface of the micro light-emitting diode, which is far away from the first substrate, and the solder defining unit is arranged on the outer peripheral side of the first bonding pad, so that the solder defining unit can protect the first bonding pad, the first bonding pad is prevented from being polluted or damaged, the connection stability of the first bonding pad and the micro light-emitting diode can be enhanced, and in the process of peeling the first substrate from the micro light-emitting diode array, the first bonding pad is prevented from being damaged in the peeling process of the first substrate due to the protection of the solder defining unit, and the performance and the product yield of the micro-component array substrate can be further ensured.
Drawings
In the following, brief descriptions will be given to the drawings required to be used in the embodiments of the present invention, and those skilled in the art can obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a display panel motherboard according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a micro-component array substrate according to an embodiment of the invention;
fig. 3 is a top view of a micro-component array substrate according to an embodiment of the invention;
FIG. 4 is a top view of a driving circuit substrate according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of another display panel mother board according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a display panel after peeling off a first substrate according to an embodiment of the invention;
FIG. 7 is a schematic structural diagram of a display panel after peeling of another first substrate according to an embodiment of the invention;
FIG. 8 is a flowchart illustrating a method of fabricating a display panel according to an embodiment of the present invention;
fig. 9 to fig. 19 are schematic structural diagrams corresponding to steps of a method for manufacturing a display panel according to an embodiment of the invention;
fig. 20 is a flowchart of another method for manufacturing a display panel according to an embodiment of the invention.
Detailed Description
Features and exemplary embodiments of various aspects of the present invention will be described in detail below, and in order to make objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention. It will be apparent to one skilled in the art that the present invention may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the present invention by illustrating examples of the present invention.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
It will be understood that when a layer, region or layer is referred to as being "on" or "over" another layer, region or layer in describing the structure of the component, it can be directly on the other layer, region or layer or intervening layers or regions may also be present. Also, if the component is turned over, one layer or region may be "under" or "beneath" another layer or region.
Features and exemplary embodiments of various aspects of the present invention will be described in detail below. Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
The Micro-LED is characterized in that an LED epitaxial thin film layer is formed on a substrate, inductive coupling plasma etching is used for etching the LED epitaxial thin film layer, then a micron-grade Micro-LED epitaxial thin film structure is directly formed, the Micro-LED epitaxial thin film structure comprising the substrate and the epitaxial layer formed on the substrate is bonded on a driving circuit substrate, finally the substrate is peeled off by a physical or chemical mechanism, and pixels are formed on the driving circuit substrate by only the 4-5 mu m Micro-LED epitaxial thin film structure. The distance between the Micro LED epitaxial thin film structures is the distance required by the display pixels, when high resolution is required, the distance between the pixels can be reduced, in order to meet the requirement of high resolution, the distance between the Micro LED epitaxial thin film structures is small, and a large number of Micro LED epitaxial thin film structures are formed on the substrate, so that some problems can occur in the process of stripping the substrate, for example, the substrate is not easy to strip or is not completely stripped because the large number of Micro LED epitaxial thin film structures are all connected with the substrate; however, the pad is easily broken by a large external force to cause an open circuit. Moreover, because the Micro-LED pixel points are very dense, the distance between the electrodes is very small, and the phenomenon of short circuit caused by bridging between the electrodes is very easy to occur in the flip-chip bonding process of the Micro-LED array substrate and the driving circuit substrate.
To solve the above problems, an embodiment of the invention provides a display panel mother board, and please refer to fig. 1, where fig. 1 shows a schematic structural diagram of a display panel mother board according to an embodiment of the invention.
The display panel mother board provided by the embodiment of the invention comprises a micro-component array substrate 10 and a driving circuit substrate 20. The driving circuit substrate 20 is disposed opposite to the micro-component array substrate 10 and electrically connected to the micro-component array substrate through the solder 13.
The display panel motherboard provided by the invention is characterized in that the micro light-emitting diodes 121 are arrayed through an etching process, and the micro light-emitting diodes 121 are flip-chip bonded on the driving circuit substrate 20. In the embodiment of the present invention, the micro light emitting diodes 121 are patterned through an etching process when the micro light emitting diodes 121 are manufactured, and flip-chip bonded on the driving circuit substrate 20 so that each micro light emitting diode can be driven individually.
Specifically, referring to fig. 2 and fig. 3, fig. 2 shows a schematic structural diagram of a micro-component array substrate according to an embodiment of the present invention, and fig. 3 shows a top view of the micro-component array substrate according to the embodiment of the present invention. The Micro-element array substrate 10 provided by the embodiment of the invention is a Micro-LED Micro-light emitting array substrate, and includes a plurality of Micro light emitting diodes 121 arranged in an array, and the internal structures of the plurality of Micro light emitting diodes 121 are substantially the same, and the Micro-LED Micro-element array substrate will be described in detail below. In order to clearly show the connection relationship of the conductive structures, a part of the insulating layer is hidden and shown in the three-dimensional schematic diagram.
The micro-component array substrate 10 of the present embodiment includes a first substrate 11 and a micro-light emitting diode array 12, the micro-light emitting diode array 12 is disposed on the first substrate 11 and includes a plurality of micro-light emitting diodes 121 distributed in an array, at least a portion of the surfaces of the micro-light emitting diodes 121 facing away from the first substrate 11 are disposed with a first bonding pad 122 and a solder defining unit 123, and the solder defining unit 123 is disposed on the outer periphery of the first bonding pad 122 and is used for accommodating and protecting the solder 13.
According to the micro-component array substrate 10 of the embodiment of the invention, the solder defining unit 123 is disposed on the surface of the micro light emitting diode 121 away from the first substrate 11, and the solder defining unit 123 is disposed on the outer peripheral side of the first pad 122, so that the solder defining unit 123 protects the first pad 122, prevents the first pad 122 from being contaminated or damaged, and can enhance the stability of the connection between the first pad 122 and the micro light emitting diode 121, and in the process of peeling the first substrate 11 and the micro light emitting diode array 12, the protection of the solder defining unit 123 prevents the first pad 122 from being damaged in the peeling process of the first substrate 11, thereby ensuring the performance and the product yield of the micro-component array substrate 10. In some alternative embodiments, the outer circumferential side of each first pad 122 is provided with a solder-defining unit 123 to protect each first pad 122.
The first substrate 11 may be a sapphire substrate, or may be a silicon substrate or a gallium arsenide substrate.
A plurality of layer structures of LED epitaxy are formed on the first substrate 11, wherein a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer are sequentially formed on the first substrate 11. The first conductive type semiconductor layer may be an N-type semiconductor layer, and the second conductive type semiconductor layer may be a P-type semiconductor layer. The light emitting layer is a region where electrons and holes from the first conductive type semiconductor layer and the second conductive type semiconductor layer recombine when power is applied, and causes the micro light emitting diode 121 to emit light when the electrons and holes combine. Alternatively, the micro light emitting diode 121 in the embodiment of the present invention may have any shape, such as a square or a circle, and the side length of the square micro light emitting diode 121 is, for example, 5 μm to 100 μm, and the diameter of the circle micro light emitting diode 121 is, for example, 5 μm to 100 μm.
Further, in the micro light emitting diode array substrate, the first bonding pad 122 is formed on the micro light emitting diode, and the first bonding pad 122 has a predetermined width so as to be electrically connected to the driving circuit substrate.
In an alternative embodiment of the present invention, the micro-component array substrate 10 further includes a plurality of solders 13, the solder-defining unit 123 forms an accommodating space 1231 around an outer circumferential side of the first pad 122, and the solders 13 are disposed in the accommodating space 1231. In these embodiments, since the solder-defining unit 123 forms the continuously closed accommodating space 1231 around the outer circumferential side of the first pad 122 and the solder 13 is formed in the accommodating space 1231, the solder-defining unit 123 can protect the first pad 122 and the solder 13 disposed on the first pad 122 all over.
The solder defining unit 123 may be made of a photosensitive resist, and further, the solder defining unit 123 may be made of an organic material, an oxide material, and the like, including but not limited to polyimide, silicone, phenolic resin, epoxy resin, and the like.
The first pad 122 may be made of a conductive material, such as metal or Indium Tin Oxide (ITO). For example, in some embodiments, the first pad 122 is made of molybdenum, titanium, aluminum, copper, gold, silver, nickel, platinum, or the like.
The solder 13 may be made of a metal alloy material, such as copper-zinc alloy, silver-copper alloy, or tin-lead alloy. For example, in some embodiments, the solder 13 is made of a eutectic solder, wherein the eutectic solder is a solder containing about 60% tin and about 40% lead.
Further, in some alternative embodiments, the solder defines a thickness h of the unit 123 1 Thickness h of the first pad 122 3 And the thickness h of the solder 13 5 Satisfies the following conditions: h is 1 -h 3 ≤h 5 (ii) a Optionally, the solder defines a thickness h of the unit 123 1 Thickness h of the first pad 122 3 And the thickness h of the solder 13 5 Satisfies the following conditions: h is 5 /3≤h 1 -h 3 ≤2h 5 /3. By properly setting the thickness of the solder defining unit 123, the first pad 122 and the solder 13 can be effectively protected, and the back of the solder defining unit 123 is protectedThe distance from the surface of the micro light emitting diode 121 to the surface of the solder 13 away from the micro light emitting diode 121 is lower than the distance from the surface of the solder 13 to the surface of the micro light emitting diode 121, so that the solder 13 and the driving circuit substrate 20 are always kept connected in advance when the micro element array substrate 10 and the driving circuit substrate 20 are connected, and the first bonding pad 122 and the driving circuit substrate 20 are prevented from being electrically connected unstably or polluting the second bonding pad 22.
Referring to fig. 4, fig. 4 is a top view of a driving circuit substrate according to an embodiment of the invention. The driving circuit substrate 20 has a connection surface 21 facing the micro-component array substrate 10 and provided with a plurality of second pads 22, the plurality of second pads 22 are distributed in an array, and at least part of the second pads 22 overlaps with the first pads 122 in the projection of the display panel mother board in the thickness direction; wherein the solder defining unit 123 is connected to the connection face 21, the solder 13 is interposed between the first pad 122 and the second pad 22 whose projections in the thickness direction overlap, and the first pad 122 and the second pad 22 are electrically connected by the solder 13.
The second pad 22 may be made of a conductive material, such as metal or Indium Tin Oxide (ITO). The first pad 122 and the second pad 22 may be made of different conductive materials, for example, in some embodiments, the first pad 122 is made of a molybdenum material, and the second pad 22 is made of titanium, aluminum, or the like.
According to the display panel motherboard provided by the embodiment of the invention, the solder defining unit 123 is arranged on the surface of the micro light emitting diodes 121, which is away from the first substrate 11, the solder defining unit 123 is arranged on the circumferential outer side of the first bonding pad 122, so that the solder defining unit 123 protects the micro light emitting diodes 121 and the first bonding pad 122, further, the solder 13 is arranged between the first bonding pad 122 and the second bonding pad 22, which are overlapped in projection in the thickness direction, and the first bonding pad 122 is electrically connected with the second bonding pad 22 through the solder 13, wherein the solder defining unit 123 is connected with the connecting surface 21, so that support is provided for the packaging of the micro light emitting diodes 121, and the solder defining unit 123 can effectively protect the second bonding pad 22 and the solder 13, so that the stability of the electrical connection between the first bonding pad 122 and the second bonding pad 22 is enhanced.
Further, referring to fig. 5, fig. 5 is a schematic structural diagram of another display panel mother board according to an embodiment of the present invention. According to the embodiment of the invention, the driving circuit substrate 20 further includes a dielectric layer 23, the solder defining unit 123 is connected to the connection surface 21 through the dielectric layer 23, and the solder 13 penetrates through the dielectric layer 23 and is electrically connected to the second pad 22 on the connection surface 21. The solder 13 and the second pad 22 are connected together through the dielectric layer 23, so that the first pad 122 is electrically connected with the second pad 22 through the solder 13, meanwhile, the whole micro-component array substrate 10 is fixed by the dielectric layer 23, and the support and heat dissipation of the micro-light emitting diode 121 package are realized, moreover, as the arrangement among the micro-light emitting diodes 121 is very dense, the second pad 22 on the corresponding driving circuit substrate 20 is very dense, and the dielectric layer 23 is arranged on the driving circuit substrate 20, the short circuit phenomenon caused by the contact among the second pad 22, the solder 13 connected with the second pad 22 and the first pad 122 can be effectively prevented, and the light emitting stability and the product yield of the display panel are improved.
The dielectric layer 23 is a non-conductive film (NCF), and specifically, the dielectric layer 23 may be made of a high molecular polymer or the like, including but not limited to a resin material. By providing the NCF film on the connection surface 21 of the driving circuit board 20, the first pad 122, the solder 13, and the second pad 22 that are connected to each other can be protected, and the NCF film is opaque to light, so that light leakage of the micro light emitting diode 121 in a downward direction during light emission can be prevented, and thus, the light emission efficiency of the micro light emitting diode 121 can be effectively improved, and light loss can be reduced.
Fig. 6 is a schematic structural diagram of a display panel after a first substrate 11 is peeled off according to an embodiment of the present invention. The display panel of the embodiment includes a micro light emitting diode array 12 and a driving circuit substrate 20, the micro light emitting diode array 12 includes a plurality of micro light emitting diodes 121 distributed in an array, a first bonding pad 122 and a solder defining unit 123 disposed on at least a portion of the surface of the micro light emitting diodes 121, the solder defining unit 123 is disposed on the outer periphery side of the first bonding pad 122; the driving circuit substrate 20 is arranged opposite to the micro light-emitting diode array 12 and is electrically connected with the micro light-emitting diode array 12 through the solder 13, the driving circuit substrate 20 is provided with a connecting surface 21 which faces the micro light-emitting diode array 12 and is provided with a plurality of second bonding pads 22, the plurality of second bonding pads 22 are distributed in an array, and at least partial projections of the second bonding pads 22 and the first bonding pads 122 in the thickness direction of the display panel are overlapped; wherein the solder defining unit 123 is connected to the connection face 21, the solder 13 is interposed between the first pad 122 and the second pad 22 whose projections in the thickness direction of the display panel overlap, and the first pad 122 and the second pad 22 are electrically connected by the solder 13. The display panel provided by the embodiment of the invention can be suitable for micro-displays such as a head-mounted display or a head-up display.
In the display panel according to the embodiment of the invention, the first pad 122 and the solder defining unit 123 are disposed on at least a part of the surface of the micro light emitting diode 121, the solder defining unit 123 is disposed on the circumferential outer side of the first pad 122, so that the solder defining unit 123 protects the micro light emitting diode 121 and the first pad 122, further, the solder 13 is disposed between the first pad 122 and the second pad 22 overlapped by the projection in the thickness direction, and the first pad 122 is electrically connected with the second pad 22 through the solder 13, wherein the solder defining unit 123 is connected with the connection surface 21, so that the solder defining unit 123 can effectively protect the second pad 22 and the solder 13, thereby enhancing the stability of the electrical connection between the first pad 122 and the second pad 22, and improving the product performance and the product yield of the display panel.
Further, referring to fig. 7, fig. 7 is a schematic structural diagram of a display panel after the first substrate 11 is peeled off according to another embodiment of the invention. According to the embodiment of the invention, the driving circuit substrate 20 further includes a dielectric layer 23, the solder defining unit 123 is connected to the connection surface 21 through the dielectric layer 23, and the solder 13 penetrates through the dielectric layer 23 and is electrically connected to the second pad 22 on the connection surface 21. The solder 13 and the second pad 22 are connected together through the dielectric layer 23, so that the first pad 122 is electrically connected with the second pad 22 through the solder 13, meanwhile, the whole micro-component array substrate 10 is fixed by the dielectric layer 23, and the support and heat dissipation of the micro-light emitting diode 121 package are realized, moreover, as the arrangement among the micro-light emitting diodes 121 is very dense, the second pad 22 on the corresponding driving circuit substrate 20 is very dense, and the dielectric layer 23 is arranged on the driving circuit substrate 20, the short circuit phenomenon caused by the contact among the second pad 22, the solder 13 connected with the second pad 22 and the first pad 122 can be effectively prevented, and the light emitting stability and the product yield of the display panel are improved.
It is understood that the display panel is formed by mechanically peeling off the first substrate 11 from the display panel mother substrate, and thus, the detailed structure will not be described.
Fig. 8 shows a method for manufacturing a display panel, and fig. 8 is a flowchart of a method 800 for manufacturing a display panel according to an embodiment of the invention. The method for manufacturing a display panel according to the embodiment of the present invention includes steps S810 to S870.
And S810, forming a micro light-emitting diode array on the first substrate, wherein the micro light-emitting diode array comprises a plurality of micro light-emitting diodes distributed in an array, and a first bonding pad is arranged on the surface of at least part of the micro light-emitting diodes, which is far away from the first substrate.
And S820, forming a solder limiting unit on the micro light-emitting diode, wherein the solder limiting unit is arranged on the outer periphery side of the first bonding pad.
And S830, forming solder on the side, away from the first substrate, of the first bonding pad.
And S840, providing a driving circuit substrate, wherein the driving circuit substrate is provided with a connecting surface facing the first substrate and provided with a plurality of second bonding pads, and the plurality of second bonding pads are distributed in an array.
And S850, overturning and aligning the first substrate, the micro light-emitting diode array, the solder defining unit and the solder so that at least part of the second bonding pad is overlapped with the projection of the first bonding pad in the thickness direction.
And S860, electrically connecting the first bonding pad and the second bonding pad through the solder, wherein the solder limiting unit is connected with the connecting surface.
S870, the first substrate is peeled off to form a display panel including the micro light emitting diode array, the solder defining unit, and the connection surface.
The method 800 for manufacturing the display panel is described in detail with reference to fig. 9 to 15.
Referring to fig. 9, fig. 9 shows a schematic structural diagram of step S810. In step S810, a micro light emitting diode array 12 is formed on a first substrate 11, where the micro light emitting diode array 12 includes a plurality of micro light emitting diodes 121 distributed in an array, and a first bonding pad 122 is disposed on a surface of at least a part of the micro light emitting diodes 121 facing away from the first substrate 11.
Referring to fig. 10 to 13, fig. 10 to 13 show schematic structural diagrams of the step S820. In step S820, a solder defining unit 123 is formed on the micro light emitting diode 121, the solder defining unit 123 being disposed on an outer peripheral side of the first pad 122.
Specifically, step S820 may include coating a first solution on the first substrate 11, and curing to form a first layer structure; then, patterning is performed on the first layer structure to form the solder defining unit 123, at this time, the solder defining unit 123 is disposed on the surface of the micro light emitting diode 121 facing away from the first substrate 11, and optionally, in the embodiment of the present invention, the solder defining unit 123 forms the accommodating space 1231 around the outer peripheral side of the first pad 122. The solder defining unit 123 is disposed outside the first pad 122 to protect the first pad 122, so that the connection between the first pad 122 and the micro light emitting diode 121 is firmer, and meanwhile, the solder defining unit 123 is disposed on a surface of the micro light emitting diode 121 facing away from the first substrate 11, which is more favorable for peeling off the first substrate 11 than a case where the solder defining unit 123 is also disposed on the first substrate 11.
Referring to fig. 14, fig. 11 shows a schematic structural diagram of step S830. In step S830, solder is formed on the side of the first pad 122 facing away from the first substrate 11.
Specifically, in step S830, the solder 13 is formed in the accommodating space 1231 of the solder defining unit 123, the solder 13 may be formed by using an electroplating method, the electroplated solder 13 is filled in the accommodating space 1231 of the solder defining unit 123, and then the solder 13 is formed by high-temperature reflow electroplating, wherein the solder 13 may be a tin-silver (Sn-Ag) solder 13, and optionally, the thickness of the solder 13 may be 110 μm to 120 μm.
It is understood that the micro-component array substrate may be prepared through the steps S810, S820 and S830.
Referring to fig. 15 to 16, fig. 15 to 16 show schematic structural diagrams of the step S840. In step S840, a driving circuit board 20 is provided, the driving circuit board 20 has a connection surface 21 facing the first substrate 11 and having a plurality of second pads 22, and the plurality of second pads 22 are distributed in an array.
Specifically, step S840 may include: first, a plurality of second pads 22 are provided on the connection surface 21, and then a dielectric layer 23 is formed on the connection surface 21, wherein the dielectric layer 23 covers the second pads 22. It is understood that a plurality of second pads 22 may be distributed on the connection surface 21 in an array, and a spacing between at least some of the second pads 22 is the same as a spacing between the first pads 122. The dielectric layer 23 may be a non-conductive film, and may be protected by the second pad 22.
Referring to fig. 17, fig. 17 shows a schematic structural diagram of step S850. In step S850, the first substrate 11, the micro light emitting diode array 12, the solder defining unit 123, and the solder 13 are turned over and aligned so that at least a part of the second pad 22 overlaps the projection of the first pad 122 in the thickness direction.
Specifically, in step S850, the first substrate 11, the micro light emitting diode array 12, the solder defining unit 123 and the solder 13 are grabbed and turned over by 180 ° as the whole of the micro component array substrate 10 by vacuum or electrostatic attraction, so that the micro light emitting diode array 12, the solder defining unit 123 and the solder 13 are disposed toward the second pad 22, and are aligned with the second pad 22 on the driving circuit substrate 20 by a Charge Coupled Device (CCD) so that at least a part of the second pad 22 overlaps with the projection of the first pad 122 in the thickness direction, thereby facilitating accurate alignment of the second pad 22 with the first pad 122 and achieving electrical connection through the solder 13.
Referring to fig. 18, fig. 18 shows a schematic structural diagram of step S860. In step S860, the first pad 122 and the second pad 22 are electrically connected by the solder 13, and the solder-defining unit 123 is connected to the connection surface 21.
Specifically, in step S860, the mechanical arm of the micro-component array substrate 10 is moved toward the driving circuit substrate 20, and after the alignment is completed, the micro-component array substrate 10 and the driving circuit substrate 20 are pressed together, in this process, the solder 13 presses the NCF film to move the NCF film away from the outer peripheral side of the second pad 22, and finally the solder 13 and the second pad 22 are connected in a high temperature environment, and the solder defining unit 123 is connected to the connection surface 21, where the high temperature means a temperature of 100 ℃ to 400 ℃. The solder defining unit 123 and the dielectric layer 23 form a closed space surrounding and covering the first pad 122, the solder 13 and the second pad 22, so that the pads can be protected, the stability of electrical connection is improved, and air, moisture and the like are effectively prevented from polluting the pads to cause pollution of the pads.
Referring to fig. 19, fig. 19 is a schematic structural diagram of step S870. In step S870, the first substrate 11 is peeled off to form a display panel including the micro light emitting diode array 12, the solder defining unit 123, and the connection surface 21.
According to the manufacturing method 800 of the display panel of the above embodiment of the invention, the solder defining unit 123 is disposed on the surface of the plurality of micro light emitting diodes 121 facing the driving circuit substrate 20, the solder defining unit 123 is disposed on the circumferential outer side of the first bonding pad 122, so that the solder defining unit 123 protects the micro device and the first bonding pad 122, further, the solder 13 is disposed between the first bonding pad 122 and the second bonding pad 22 with overlapped projections in the thickness direction, and the first bonding pad 122 is electrically connected with the second bonding pad 22 through the solder 13, wherein the solder defining unit 123 is connected with the connection surface 21, so that the solder defining unit 123 can effectively protect the second bonding pad 22 and the solder 13, and the stability of the electrical connection between the first bonding pad 122 and the second bonding pad 22 is enhanced. Meanwhile, since the solder defining unit 123 is disposed on the surface of the micro light emitting diode 121 without overlapping the first substrate 11, the stress of peeling the first substrate 11 can be reduced, and damage to the connecting first pad 122 and the second pad 22 connected to each other can be reduced.
An embodiment of the invention further provides another manufacturing method 2000 of a display panel, please refer to fig. 20, where fig. 20 is a flowchart of the manufacturing method 2000 of the display panel according to the embodiment of the invention. The method of the display panel according to the embodiment of the invention includes steps S2010 to S2070.
In step S2010, a micro light emitting diode array is formed on the first substrate, the micro light emitting diode array includes a plurality of micro light emitting diodes distributed in an array, and a first pad is disposed on a surface of at least a part of the micro light emitting diodes away from the first substrate.
In step S2020, a driving circuit substrate is provided, where the driving circuit substrate has a connection surface facing the first substrate and provided with a plurality of second pads, and the plurality of second pads are distributed in an array.
In step S2030, a solder defining unit is formed on the connection face, the solder defining unit being provided on an outer peripheral side of the second pad.
In step S2040, solder is formed on the side of the second pad away from the connection surface.
In step S2050, the first substrate and the micro light emitting diode array are flipped and aligned such that at least a portion of the second pad overlaps the projection of the first pad in the thickness direction.
In step S2060, the first pad and the second pad are electrically connected by solder, and the solder defining unit is connected to the surface of the micro light emitting diode away from the first substrate.
In step S2070, the first substrate is peeled off to form a display panel including a micro light emitting diode array, a solder defining unit, and a connection surface.
The difference between the method for manufacturing a display panel in the embodiment of the present invention and the method for manufacturing a display panel in the first embodiment is that the solder defining unit 123 and the solder 13 are formed on the driving circuit substrate 20, and other specific steps have the same implementation and beneficial effects, and are not described again.
It is to be understood that relational terms such as "first," "second," and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation or arrangement in sequences other than those illustrated or otherwise described herein.
The present invention may be embodied in other specific forms without departing from its spirit or essential characteristics. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Also, different features that are present in different embodiments may be combined to advantage. Other variations to the disclosed embodiments can be understood and effected by those skilled in the art upon studying the drawings, the specification, and the claims.

Claims (12)

1. A micro-component array substrate, comprising:
a first substrate;
the micro light-emitting diode array is arranged on the first substrate and comprises a plurality of micro light-emitting diodes distributed in an array mode, at least part of the surfaces, deviating from the first substrate, of the micro light-emitting diodes are provided with a first bonding pad and a solder defining unit, and the solder defining unit is arranged on the outer periphery side of the first bonding pad.
2. The micro-component array substrate according to claim 1, further comprising a plurality of solders, the solder-defining unit forming an accommodation space around an outer peripheral side of the first pad, the solders being disposed in the accommodation space.
3. The micro-component array substrate of claim 2, wherein the solder-defining unit is made of photoresist.
4. The micro-component array substrate of claim 2, wherein the solder-defining unit has a thickness h 1 The first mentionedA thickness h of a bonding pad 3 And the thickness h of the solder 5 Satisfies the following conditions: h is 1 -h 3 ≤h 5
5. The micro-component array substrate of claim 4, wherein the solder-defining unit has a thickness h 1 A thickness h of the first pad 3 And the thickness h of the solder 5 Satisfies the following conditions: h is 5 /3≤h 1 -h 3 ≤2h 5 /3。
6. A display panel, comprising:
the micro light-emitting diode array comprises a plurality of micro light-emitting diodes distributed in an array, a first bonding pad and a solder defining unit, wherein at least part of the surface of each micro light-emitting diode is provided with the first bonding pad, and the solder defining unit is arranged on the outer peripheral side of the first bonding pad;
the driving circuit substrate is arranged opposite to the micro light-emitting diode array and is electrically connected with the micro light-emitting diode array through a welding flux, the driving circuit substrate is provided with a connecting surface which faces the micro light-emitting diode array and is provided with a plurality of second bonding pads, the second bonding pads are distributed in an array mode, and at least part of projections of the second bonding pads and the first bonding pads in the thickness direction of the display panel are overlapped;
wherein the solder defining unit is connected to the connection face, the solder is interposed between the first pad and the second pad whose projections in a thickness direction of the display panel overlap, and the first pad and the second pad are electrically connected by the solder.
7. The display panel according to claim 6, wherein the driving circuit substrate further comprises a dielectric layer, the solder defining unit is connected to the connection surface through the dielectric layer, and the solder passes through the dielectric layer and is electrically connected to the second pad on the connection surface.
8. The display panel according to claim 7, wherein the dielectric layer is a non-conductive insulating film.
9. A method for manufacturing a display panel, comprising:
forming a micro light-emitting diode array on a first substrate, wherein the micro light-emitting diode array comprises a plurality of micro light-emitting diodes distributed in an array manner, and at least part of the surface of the micro light-emitting diodes, which is far away from the first substrate, is provided with a first bonding pad;
forming a solder defining unit on the micro light emitting diode, the solder defining unit being disposed at an outer circumferential side of the first pad;
forming solder on the side of the first pad, which faces away from the first substrate;
providing a driving circuit substrate, wherein the driving circuit substrate is provided with a connecting surface which faces the first substrate and is provided with a plurality of second bonding pads, and the second bonding pads are distributed in an array;
turning over and aligning the first substrate, the micro light emitting diode array, the solder defining unit and the solder so that the projection of the at least part of the second pad and the first pad in the thickness direction overlap;
electrically connecting the first pad and the second pad by the solder, the solder defining unit being connected to the connection face;
and stripping the first substrate to form a display panel comprising the micro light-emitting diode array, the solder defining unit and the connecting surface.
10. The method according to claim 9, wherein the step of providing a driving circuit substrate having a connection surface facing the first substrate and provided with a plurality of second pads, the plurality of second pads being distributed in an array further comprises: and forming a dielectric layer on the connecting surface, wherein the dielectric layer covers the second bonding pad.
11. The method according to claim 9, wherein the step of forming a solder defining unit on the first substrate, the solder defining unit being provided on an outer peripheral side of the first pad, comprises:
coating a first solution on the first substrate, and curing to form a first layer structure;
and patterning the first layer structure to form a solder defining unit.
12. A method for manufacturing a display panel, comprising:
forming a micro light-emitting diode array on a first substrate, wherein the micro light-emitting diode array comprises a plurality of micro light-emitting diodes distributed in an array manner, and at least part of the surface of the micro light-emitting diodes, which is far away from the first substrate, is provided with a first bonding pad;
providing a driving circuit substrate, wherein the driving circuit substrate is provided with a connecting surface which faces the first substrate and is provided with a plurality of second bonding pads, and the second bonding pads are distributed in an array;
forming a solder defining unit on the connection surface, the solder defining unit being disposed on an outer peripheral side of the second pad;
forming solder on one side of the second pad, which is far away from the connecting surface;
turning over and aligning the first substrate and the micro light-emitting diode array so that the projection of at least part of the second bonding pad and the first bonding pad in the thickness direction are overlapped;
electrically connecting the first bonding pad and the second bonding pad through the solder, wherein the solder defining unit is connected with the surface of the micro light-emitting diode, which faces away from the first substrate;
and stripping the first substrate to form a display panel comprising the micro light-emitting diode array, the solder defining unit and the connecting surface.
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102237470A (en) * 2010-04-29 2011-11-09 展晶科技(深圳)有限公司 Light emitting diode packaging structure and manufacturing method thereof as well as manufacturing method of base
CN105140380A (en) * 2011-05-27 2015-12-09 Lg伊诺特有限公司 Light emitting device, light emitting module and fabricating method for light emitting device
CN105304807A (en) * 2014-07-18 2016-02-03 首尔伟傲世有限公司 Emitting diode, illuminator and manufacturing method thereof
CN205488228U (en) * 2014-12-12 2016-08-17 首尔伟傲世有限公司 Light -emitting device
CN108496250A (en) * 2016-01-28 2018-09-04 奥斯兰姆奥普托半导体有限责任公司 The manufacture of multi-chip module
CN108682312A (en) * 2018-05-12 2018-10-19 汕头超声显示器技术有限公司 A kind of manufacturing method of LED array device
CN109473532A (en) * 2018-11-20 2019-03-15 合肥京东方光电科技有限公司 A kind of production method of Micro LED display base plate

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102237470A (en) * 2010-04-29 2011-11-09 展晶科技(深圳)有限公司 Light emitting diode packaging structure and manufacturing method thereof as well as manufacturing method of base
CN105140380A (en) * 2011-05-27 2015-12-09 Lg伊诺特有限公司 Light emitting device, light emitting module and fabricating method for light emitting device
CN105304807A (en) * 2014-07-18 2016-02-03 首尔伟傲世有限公司 Emitting diode, illuminator and manufacturing method thereof
CN205488228U (en) * 2014-12-12 2016-08-17 首尔伟傲世有限公司 Light -emitting device
CN108496250A (en) * 2016-01-28 2018-09-04 奥斯兰姆奥普托半导体有限责任公司 The manufacture of multi-chip module
CN108682312A (en) * 2018-05-12 2018-10-19 汕头超声显示器技术有限公司 A kind of manufacturing method of LED array device
CN109473532A (en) * 2018-11-20 2019-03-15 合肥京东方光电科技有限公司 A kind of production method of Micro LED display base plate

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