KR20180115173A - Display device using semiconductor light emitting device - Google Patents

Abstract

The present invention relates to a display device, which comprises: a substrate having a first electrode unit; and a plurality of semiconductor light emitting devices electrically connected to the first electrode unit through an adhesive layer including a metal. At least one of the semiconductor light emitting devices includes: first and second conductive electrodes; a first conductive semiconductor layer; a second conductive semiconductor layer overlapping the first conductive semiconductor layer; an active layer disposed between the first and second conductive semiconductor layers; a passivation layer formed to surround the first and second conductive semiconductor layers; and an insulation member for surrounding the passivation layer in a ring shape. The insulation member is parallel to the substrate to absorb impact caused by irradiation of laser beams, and horizontally protrudes from a side surface of the passivation layer.

Description

Technical Field [0001] The present invention relates to a display device using a semiconductor light-

The present invention relates to a display device and a method of manufacturing the same, and more particularly to a flexible display device using a semiconductor light emitting element.

In recent years, display devices having excellent characteristics such as a thin shape and a flexible shape in the field of display technology have been developed. On the other hand, major displays that are commercialized today are represented by LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes).

However, in the case of LCD, there is a problem that the reaction time is not fast and the implementation of flexible is difficult. In the case of AMOLED, there is a weak point that the lifetime is short, the mass production yield is not good, and the degree of flexible is weak.

Light emitting diodes (LEDs) are well-known semiconductor light emitting devices that convert current into light. In 1962, red LEDs using GaAsP compound semiconductors were commercialized, Has been used as a light source for a display image of an electronic device including a communication device. Accordingly, a method of solving the above problems by implementing a flexible display using the semiconductor light emitting device can be presented.

In the display using the semiconductor light emitting device, the semiconductor light emitting device grown on the growth substrate on the wiring substrate can be transferred. However, when the transfer is performed, defects of the semiconductor light emitting device may occur due to impact and heat generated during the separation process of the semiconductor light emitting device on the growth substrate. Accordingly, the present invention provides a semiconductor light emitting device structure capable of protecting a semiconductor light emitting device during a transfer process.

A display device according to the present invention provides a structure of a semiconductor light emitting device that can reduce defects caused by scattering of a metal material in an adhesive layer when transferring a semiconductor light emitting device on a growth board to a wiring substrate, .

Further, the display device according to the present invention provides a structure of a semiconductor light emitting element in which stability and reliability are improved when a semiconductor light emitting element on a growing board is transferred to a wiring board.

The display device according to the present invention includes an insulating member which annularly surrounds the passivation layer to reduce defects and improve stability and reliability.

The display device according to the present invention includes a substrate having a first electrode portion and a plurality of semiconductor light emitting devices electrically connected through the adhesive layer including the first electrode portion and the metal, A first conductive type semiconductor layer, a first conductive type semiconductor layer, a first conductive type semiconductor layer, a first conductive type semiconductor layer, a first conductive type semiconductor layer, a first conductive type semiconductor layer, An active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, a passivation layer formed to surround the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and an insulating member which surrounds the passivation layer in an annular shape, Parallel to the substrate to absorb impact by irradiation of the laser beam and project horizontally at the side of the passivation layer.

In an exemplary embodiment, the insulating member may extend from an upper surface of the second conductive semiconductor layer to a lower surface of the passivation layer. The insulating member protrudes 3 to 100 μm in the horizontal direction from the side of the passivation layer to annularly surround the passivation layer. Further, the insulating member may include at least one of polyimide, epoxy, acrylic, phenol, and silicone resin.

In an embodiment, the insulating member may further include light reflecting particles such that the reflectance of the insulating member is increased. The light reflecting particles may include at least one of titanium dioxide, barium sulfate, silicon dioxide, and silicon. The light reflection particles may prevent light from being lost to the side of the semiconductor light emitting device through the insulating member.

In one embodiment, the insulating member absorbs the laser beam to prevent the metal material in the adhesive layer from scattering and adhere to the side surface of the semiconductor light emitting device, absorbs the impact caused by the laser beam, have.

The passivation layer may include a first portion that covers one side of the first conductive type semiconductor layer, a side of the first conductive type semiconductor layer, a side surface of the active layer, and a side surface of the second conductive type semiconductor layer And a second portion for wrapping.

In addition, the first portion may include a through hole that is formed so as to surround and surround the edge of the first conductivity type semiconductor layer and expose the first conductivity type semiconductor layer to the outside, And the first conductive type electrode is disposed on the one conductivity type semiconductor layer. Further, the first portion and the second portion are formed as a continuous layer.

In an embodiment, the second conductive type electrode is disposed on the second conductive type semiconductor layer and the insulating member, and is disposed over the second conductive type semiconductor layer and a part of the insulating member.

According to another aspect of the present invention, there is provided a semiconductor light emitting device including a first conductive type electrode, a second conductive type electrode, a first conductive type semiconductor layer, a second conductive type semiconductor layer overlapping the first conductive type semiconductor layer, An active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a passivation layer formed to surround the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; Wherein the insulating member is parallel to the substrate so as to absorb an impact caused by the irradiation of the laser beam, and protrudes horizontally from the side of the passivation layer.

In an exemplary embodiment, the insulating member may extend from an upper surface of the second conductive semiconductor layer to a lower surface of the passivation layer. In addition, the insulating member surrounds the side surface of the passivation layer, and the insulating member protrudes 3 to 100 [micro] m in the horizontal direction on the side of the passivation layer to annularly surround the passivation layer. Further, the insulating member includes at least one of polyimide, epoxy, acrylic, phenol, and silicone resin.

In the display device according to the present invention, an insulating member surrounding the semiconductor light emitting element is provided, so that the laser beam for separating the semiconductor light emitting element can be prevented from being absorbed into the adhesive layer. Accordingly, it is reduced that the metal material in the adhesive layer is scattered and adheres to the side surface of the semiconductor light emitting element, thereby causing a short circuit of the semiconductor light emitting element.

In the present invention, an insulating member surrounding the semiconductor light emitting device is provided to protect the semiconductor light emitting device from impact and heat generated in the transfer process, and to prevent cracking of the semiconductor light emitting device. This makes it possible to improve process stability and reliability during the transfer process.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.
Fig. 2 is a partially enlarged view of part A of Fig. 1, and Figs. 3a and 3b are cross-sectional views taken along line BB and CC of Fig.
4 is a conceptual diagram showing a flip chip type semiconductor light emitting device of FIG.
FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.
6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.
7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention.
8 is a cross-sectional view taken along line DD of FIG.
9 is a conceptual diagram showing a vertical semiconductor light emitting device of FIG.
Fig. 10 is an enlarged view of a portion A in Fig. 1 for explaining another embodiment of the present invention to which a semiconductor light emitting element having a new structure is applied.
11A is a cross-sectional view of an embodiment of the present invention taken along line EE of FIG.
11B is a cross-sectional view of an embodiment of the present invention taken along line E'-E 'of FIG.
12 is a cross-sectional view of an embodiment of the present invention taken along line FF of FIG.
13 is a conceptual diagram showing a semiconductor light emitting element in an embodiment of the present invention.
14A and 14B are cross-sectional views illustrating a transfer process of transferring a semiconductor light emitting device formed on a growth substrate to a substrate.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals are used to designate identical or similar elements, and redundant description thereof will be omitted. The suffix "module" and " part "for the components used in the following description are given or mixed in consideration of ease of specification, and do not have their own meaning or role. In the following description of the embodiments of the present invention, a detailed description of related arts will be omitted when it is determined that the gist of the embodiments disclosed herein may be blurred. In addition, it should be noted that the attached drawings are only for easy understanding of the embodiments disclosed in the present specification, and should not be construed as limiting the technical idea disclosed in the present specification by the attached drawings.

It is also to be understood that when an element such as a layer, region or substrate is referred to as being present on another element "on," it is understood that it may be directly on the other element or there may be an intermediate element in between There will be.

The display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation device, a slate PC, , A Tablet PC, an Ultra Book, a digital TV, a desktop computer, and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiments described herein may be applied to a device capable of being displayed, even in the form of a new product to be developed in the future.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.

According to the illustrated example, the information processed in the control unit of the display device 100 may be displayed using a flexible display.

The flexible display includes a display that can be bent, twistable, collapsible, and curlable, which can be bent by an external force. For example, a flexible display can be a display made on a thin, flexible substrate that can be bent, bent, folded or rolled like paper while maintaining the display characteristics of conventional flat panel displays.

In a state where the flexible display is not bent (for example, a state having an infinite radius of curvature, hereinafter referred to as a first state), the display area of the flexible display is flat. In the first state, the display area may be a curved surface in a state of being bent by an external force (for example, a state having a finite radius of curvature, hereinafter referred to as a second state). As shown in the figure, the information displayed in the second state may be time information output on the curved surface. Such visual information is realized by independently controlling the emission of a sub-pixel arranged in a matrix form. The unit pixel means a minimum unit for implementing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as one type of semiconductor light emitting device for converting a current into light. The light emitting diode is formed in a small size, so that it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in detail with reference to the drawings.

FIG. 2 is a partial enlarged view of a portion A of FIG. 1, FIGS. 3 A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2, FIG. 4 is a conceptual view of a flip chip type semiconductor light emitting device of FIG. FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.

Referring to FIGS. 2, 3A and 3B, a display device 100 using a passive matrix (PM) semiconductor light emitting device as a display device 100 using a semiconductor light emitting device is illustrated. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 100 includes a first substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and a plurality of semiconductor light emitting devices 150.

The first substrate 110 may be a flexible substrate. For example, to implement a flexible display device, the first substrate 110 may include glass or polyimide (PI). In addition, any insulating material such as PEN (polyethylene naphthalate) and PET (polyethylene terephthalate) may be used as long as it is insulating and flexible. In addition, the first substrate 110 may be formed of a transparent material or an opaque material.

The first substrate 110 may be a wiring substrate on which the first electrode 120 is disposed and the first electrode 120 may be disposed on the first substrate 110.

The insulating layer 160 may be disposed on the first substrate 110 on which the first electrode 120 is located and the auxiliary electrode 170 may be disposed on the insulating layer 160. In this case, a state in which the insulating layer 160 is laminated on the first substrate 110 may be a single wiring substrate. More specifically, the insulating layer 160 may be formed of an insulating material such as polyimide (PI), polyimide, PET, or PEN, and may be formed integrally with the first substrate 110, have.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150 and is disposed on the insulating layer 160 and corresponds to the position of the first electrode 120. For example, the auxiliary electrode 170 may be in the form of a dot and may be electrically connected to the first electrode 120 by an electrode hole 171 passing through the insulating layer 160. The electrode hole 171 may be formed by filling a via hole with a conductive material.

Referring to these drawings, the conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not limited thereto. For example, a layer for performing a specific function may be formed between the insulating layer 160 and the conductive adhesive layer 130, or a conductive adhesive layer 130 may be disposed on the first substrate 110 without the insulating layer 160 . In the structure in which the conductive adhesive layer 130 is disposed on the first substrate 110, the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity. To this end, the conductive adhesive layer 130 may be mixed with a substance having conductivity and a substance having adhesiveness. Also, the conductive adhesive layer 130 has ductility, thereby enabling the flexible function in the display device.

As an example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 may be formed as a layer having electrical insulation in the horizontal X-Y direction while permitting electrical interconnection in the Z direction passing through the thickness. Accordingly, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (hereinafter, referred to as a conductive adhesive layer).

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member. When heat and pressure are applied, only a specific part of the anisotropic conductive film has conductivity due to the anisotropic conductive medium. Hereinafter, the anisotropic conductive film is described as being subjected to heat and pressure, but other methods may be used to partially conduct the anisotropic conductive film. In this method, for example, either the heat or the pressure may be applied, or UV curing may be performed.

In addition, the anisotropic conduction medium can be, for example, a conductive ball or a conductive particle. According to the example, in the present example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member. When heat and pressure are applied, only specific portions are conductive by the conductive balls. The anisotropic conductive film may be a state in which a plurality of particles coated with an insulating film made of a polymer material are contained in the core of the conductive material. In this case, the insulating film is broken by heat and pressure, . At this time, the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and the electrical connection in the Z-axis direction is partially formed by the height difference of the mating member adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state in which a plurality of particles coated with a conductive material are contained in the insulating core. In this case, the conductive material is deformed (pressed) to the portion where the heat and the pressure are applied, so that the conductive material becomes conductive in the thickness direction of the film. As another example, it is possible that the conductive material penetrates the insulating base member in the Z-axis direction and has conductivity in the thickness direction of the film. In this case, the conductive material may have a pointed end.

According to the present invention, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of an insulating base member. More specifically, the insulating base member is formed of a material having adhesiveness, and the conductive ball is concentrated on the bottom portion of the insulating base member, and is deformed together with the conductive ball when heat and pressure are applied to the base member So that they have conductivity in the vertical direction.

However, the present invention is not limited thereto. The anisotropic conductive film may be formed by randomly mixing conductive balls into an insulating base member or by forming a plurality of layers in which a conductive ball is placed in a double- ACF) are all available.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which a conductive ball is mixed with an insulating and adhesive base material. In addition, solutions containing conductive particles can be solutions in the form of conductive particles or nanoparticles.

Referring again to FIG. 5, the second electrode 140 is located in the insulating layer 160, away from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed.

After the conductive adhesive layer 130 is formed in a state where the auxiliary electrode 170 and the second electrode 140 are positioned in the insulating layer 160, the semiconductor light emitting device 150 is connected to the semiconductor light emitting device 150 in a flip chip form The semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.

Referring to FIG. 4, the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type semiconductor layer 155 in which a p-type electrode 156, a p-type electrode 156 are formed, an active layer 154 formed on the p-type semiconductor layer 155, And an n-type electrode 152 disposed on the n-type semiconductor layer 153 and the p-type electrode 156 on the n-type semiconductor layer 153 and 154 in the horizontal direction. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 by the conductive adhesive layer 130, and the n-type electrode 152 may be electrically connected to the second electrode 140.

Referring again to FIGS. 2, 3A and 3B, the auxiliary electrode 170 is elongated in one direction, and one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150. For example, the p-type electrodes of the right and left semiconductor light emitting elements may be electrically connected to one auxiliary electrode around the auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 by heat and pressure, and the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 through the p- And only the portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 has conductivity and the semiconductor light emitting device does not have a conductive property because the semiconductor light emitting device is not press- The conductive adhesive layer 130 not only couples the semiconductor light emitting device 150 and the auxiliary electrode 170 and the semiconductor light emitting device 150 and the second electrode 140 but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitute a light emitting element array, and the phosphor layer 180 is formed in the light emitting element array.

The light emitting element array may include a plurality of semiconductor light emitting elements having different brightness values. Each of the semiconductor light emitting devices 150 constitutes a unit pixel and is electrically connected to the first electrode 120. For example, the first electrodes 120 may be a plurality of semiconductor light emitting devices, and the semiconductor light emitting devices may be electrically connected to any one of the plurality of first electrodes.

Also, since the semiconductor light emitting devices are connected in a flip chip form, the semiconductor light emitting devices grown on the transparent dielectric substrate can be used. The semiconductor light emitting devices may be, for example, a nitride semiconductor light emitting device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size.

According to the structure, the barrier ribs 190 may be formed between the semiconductor light emitting devices 150. In this case, the barrier ribs 190 may separate the individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130. For example, by inserting the semiconductor light emitting device 150 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier 190 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, the barrier ribs 190 may be provided separately from the reflective barrier ribs. In this case, the barrier rib 190 may include a black or white insulation depending on the purpose of the display device. When a barrier of a white insulator is used, an effect of enhancing reflectivity may be obtained. When a barrier of a black insulator is used, a contrast characteristic may be increased while having a reflection characteristic.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 180 converts the blue (B) light into the color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting an individual pixel.

That is, a red phosphor 181 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 151 at a position forming a red unit pixel, A green phosphor 182 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 151. [ In addition, only the blue semiconductor light emitting element 151 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel. More specifically, phosphors of one color may be stacked along each line of the first electrode 120. Accordingly, one line in the first electrode 120 may be an electrode for controlling one color. In other words, red (R), green (G), and blue (B) may be arranged in order along the second electrode 140, thereby realizing a unit pixel.

(R), green (G), and blue (B) unit pixels may be implemented by combining the semiconductor light emitting device 150 and the quantum dot QD instead of the fluorescent material. have.

In addition, a black matrix 191 may be disposed between each of the phosphor layers to improve contrast. That is, the black matrix 191 can improve the contrast of light and dark.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied.

5A, each of the semiconductor light emitting devices 150 includes gallium nitride (GaN), indium (In) and / or aluminum (Al) are added together to form a high output light Device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a unit pixel (sub-pixel), respectively. For example, red, green, and blue semiconductor light emitting elements R, G, and B are alternately arranged, and red, green, and blue unit pixels Form a single pixel, through which a full color display can be implemented.

Referring to FIG. 5B, the semiconductor light emitting device may include a white light emitting device W having a yellow phosphor layer for each individual device. In this case, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light emitting element W to form a unit pixel. Further, a unit pixel can be formed by using a color filter in which red, green, and blue are repeated on the white light emitting element W.

Referring to FIG. 5C, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the ultraviolet light emitting element UV. As described above, the semiconductor light emitting device can be used not only for visible light but also for ultraviolet (UV), and can be extended to a form of a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of the upper phosphor .

The semiconductor light emitting device 150 is disposed on the conductive adhesive layer 130 and constitutes a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 150 may be 80 mu m or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

Also, even if a square semiconductor light emitting device 150 having a length of 10 m on one side is used as a unit pixel, sufficient brightness for forming a display device appears. Accordingly, when the unit pixel is a rectangular pixel having a side of 600 mu m and the other side of 300 mu m as an example, the distance of the semiconductor light emitting element becomes relatively large. Accordingly, in such a case, it becomes possible to implement a flexible display device having HD picture quality.

The display device using the semiconductor light emitting device described above can be manufactured by a novel manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG.

6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

The conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed. A first electrode 120, an auxiliary electrode 170, and a second electrode 140 are formed on the wiring substrate, and the insulating layer 160 is formed on the first substrate 110 to form a single substrate (or a wiring substrate) . In this case, the first electrode 120 and the second electrode 140 may be arranged in mutually orthogonal directions. In addition, the first substrate 110 and the insulating layer 160 may include glass or polyimide (PI), respectively, in order to implement a flexible display device.

The conductive adhesive layer 130 may be formed, for example, by an anisotropic conductive film, and an anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is disposed.

A second substrate 112 corresponding to the positions of the auxiliary electrode 170 and the second electrodes 140 and having a plurality of semiconductor light emitting elements 150 constituting individual pixels is disposed on the semiconductor light emitting element 150 Are arranged so as to face the auxiliary electrode 170 and the second electrode 140.

In this case, the second substrate 112 is a growth substrate for growing the semiconductor light emitting device 150, and may be a spire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in units of wafers, the semiconductor light emitting device can be effectively used in a display device by having an interval and a size at which a display device can be formed.

Then, the wiring substrate and the second substrate 112 are thermally bonded. For example, the wiring board and the second substrate 112 may be thermocompression-bonded using an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermocompression bonding. Only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity due to the characteristics of the anisotropic conductive film having conductivity by thermocompression, The device 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and partition walls may be formed between the semiconductor light emitting devices 150.

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO).

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating a wiring substrate on which the semiconductor light emitting device 150 is coupled with silicon oxide (SiOx) or the like.

Further, the method may further include forming a phosphor layer on one surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red phosphor or a green phosphor for converting the blue (B) A layer can be formed on one surface of the device.

The manufacturing method and structure of the display device using the semiconductor light emitting device described above can be modified into various forms. For example, a vertical semiconductor light emitting device may be applied to the display device described above. Hereinafter, the vertical structure will be described with reference to Figs. 5 and 6. Fig.

In the modifications or embodiments described below, the same or similar reference numerals are given to the same or similar components as those of the previous example, and the description is replaced with the first explanation.

8 is a cross-sectional view taken along the line DD of FIG. 7, and FIG. 9 is a conceptual view illustrating a vertical semiconductor light emitting device of FIG. 8. FIG. 7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, to be.

Referring to these drawings, the display device may be a display device using a passive matrix (PM) vertical semiconductor light emitting device.

The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and a plurality of semiconductor light emitting devices 250.

The substrate 210 is a wiring substrate on which the first electrode 220 is disposed. The substrate 210 may include polyimide (PI) to implement a flexible display device. In addition, any insulating and flexible material may be used.

The first electrode 220 is disposed on the substrate 210 and may be formed as a long bar electrode in one direction. The first electrode 220 may serve as a data electrode.

A conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is located. The conductive adhesive layer 230 may be formed of an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing a conductive particle, or the like, as in a display device using a flip chip type light emitting device. ) And the like. However, the present embodiment also exemplifies the case where the conductive adhesive layer 230 is realized by the anisotropic conductive film.

If the semiconductor light emitting device 250 is connected to the semiconductor light emitting device 250 by applying heat and pressure after the anisotropic conductive film is positioned in a state where the first electrode 220 is positioned on the substrate 210, And is electrically connected to the electrode 220. In this case, the semiconductor light emitting device 250 may be disposed on the first electrode 220.

As described above, the electrical connection is generated because heat and pressure are applied to the anisotropic conductive film to partially conduct in the thickness direction. Therefore, in the anisotropic conductive film, it is divided into a portion 231 having conductivity in the thickness direction and a portion 232 having no conductivity.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 realizes electrical connection as well as mechanical bonding between the semiconductor light emitting element 250 and the first electrode 220.

Thus, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 250 may be 80 μm or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 electrically connected to the vertical semiconductor light emitting device 250 are disposed between the vertical semiconductor light emitting devices in a direction crossing the longitudinal direction of the first electrode 220.

9, the vertical type semiconductor light emitting device includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255 An n-type semiconductor layer 253 formed on the active layer 254 and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom may be electrically connected to the first electrode 220 by the conductive adhesive layer 230, and the n-type electrode 252 located at the top may be electrically connected to the second electrode 240 As shown in FIG. Since the vertical semiconductor light emitting device 250 can arrange the electrodes up and down, it has a great advantage that the chip size can be reduced.

Referring to FIG. 8 again, a phosphor layer 280 may be formed on one side of the semiconductor light emitting device 250. For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and a phosphor layer 280 for converting the blue (B) . In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 251 at a position forming a red unit pixel, A green phosphor 282 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 251. In addition, only the blue semiconductor light emitting element 251 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied to a display device to which a flip chip type light emitting device is applied, as described above.

The second electrode 240 is located between the semiconductor light emitting devices 250 and electrically connected to the semiconductor light emitting devices 250. For example, the semiconductor light emitting devices 250 may be disposed in a plurality of rows, and the second electrode 240 may be disposed between the columns of the semiconductor light emitting devices 250.

The second electrode 240 may be positioned between the semiconductor light emitting devices 250 because the distance between the semiconductor light emitting devices 250 forming the individual pixels is sufficiently large.

The second electrode 240 may be formed as a long bar-shaped electrode in one direction and may be disposed in a direction perpendicular to the first electrode.

The second electrode 240 and the semiconductor light emitting device 250 may be electrically connected by a connection electrode protruding from the second electrode 240. More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a part of the ohmic electrode by printing or vapor deposition. Accordingly, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 can be electrically connected.

According to the example, the second electrode 240 may be disposed on the conductive adhesive layer 230. A transparent insulating layer (not shown) containing silicon oxide (SiOx) or the like may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. In addition, the second electrode 240 may be formed spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as ITO (Indium Tin Oxide) is used for positioning the second electrode 240 on the semiconductor light emitting device 250, the problem that the ITO material has poor adhesion with the n-type semiconductor layer have. Accordingly, the present invention has an advantage in that the second electrode 240 is positioned between the semiconductor light emitting devices 250, so that a transparent electrode such as ITO is not used. Therefore, the light extraction efficiency can be improved by using a conductive material having good adhesiveness with the n-type semiconductor layer as a horizontal electrode without being bound by transparent material selection.

According to the structure, the barrier ribs 290 may be positioned between the semiconductor light emitting devices 250. That is, the barrier ribs 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 forming the individual pixels. In this case, the barrier ribs 290 may separate the individual unit pixels from each other, and may be formed integrally with the conductive adhesive layer 230. For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier ribs 290 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, as the partition 190, a reflective barrier may be separately provided. The barrier ribs 290 may include black or white insulators depending on the purpose of the display device.

If the second electrode 240 is directly disposed on the conductive adhesive layer 230 between the semiconductor light emitting devices 250, the barrier ribs 290 may be formed between the vertical semiconductor light emitting device 250 and the second electrode 240 As shown in FIG. Therefore, individual unit pixels can be formed with a small size by using the semiconductor light emitting device 250, and the distance between the semiconductor light emitting device 250 can be relatively large enough so that the second electrode 240 can be electrically connected to the semiconductor light emitting device 250 ), And it is possible to realize a flexible display device having HD picture quality.

In addition, according to the present invention, a black matrix 291 may be disposed between the respective phosphors to improve the contrast. That is, this black matrix 291 can improve the contrast of light and dark.

As described above, the semiconductor light emitting device 250 is disposed on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. Therefore, a full color display in which red (R), green (G), and blue (B) unit pixels form one pixel can be realized by the semiconductor light emitting device.

In the display device of the present invention described above, when the semiconductor light emitting device of the growth substrate on which the semiconductor light emitting device is grown is transferred to the transfer substrate, energy is applied to separate the semiconductor light emitting device from the growth substrate, The metal material in the adhesive layer may be scattered. There is a problem that metal particles adhere to the side surface of the semiconductor light emitting device due to the scattering phenomenon in which the metal material is scattered and short-circuiting occurs.

Furthermore, cracks may be generated in the semiconductor light emitting device due to impact and heat generated due to energy applied to separate the semiconductor light emitting device from the growth substrate. Cracks in the semiconductor light emitting device may cause leakage current of the semiconductor light emitting device. The cracks may also cause stability and reliability problems. The present invention provides a semiconductor light emitting device having a novel structure capable of solving such a problem.

Hereinafter, a display device to which a semiconductor light emitting device with a new structure is applied will be described.

Fig. 10 is an enlarged view of a portion A of Fig. 1 for explaining another embodiment of the present invention to which a semiconductor light emitting device of a new structure is applied, Fig. 11A is a cross- 10 is a cross-sectional view taken along the line E'-E ', FIG. 12 is a cross-sectional view taken along line FF of FIG. 10, and FIG. 13 is a conceptual view showing a semiconductor light emitting device having a novel structure of FIG.

10, 11A, 11B, and 12, a display device 1000 using a passive matrix (PM) type vertical semiconductor light emitting device is used as a display device 1000 using a semiconductor light emitting device. For example. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 1000 includes a substrate 1010, a first electrode 1020, an adhesive layer 1033, a second electrode 1040, an insulating member 1060, a filler 1070 and a plurality of semiconductor light emitting devices 1050 . Here, the first electrode 1020 and the second electrode 1040 may each include a plurality of electrode lines.

The substrate 1010 is a wiring substrate on which the first electrode 1020 is disposed, and may include polyimide (PI) to implement a flexible display device. In addition, any insulating and flexible material may be used.

The first electrode 1020 is disposed on the substrate 1010 and may be formed as a long bar electrode in one direction. The first electrode 1020 may serve as a data electrode.

A plurality of second electrodes 1040 electrically connected to the semiconductor light emitting device 1050 are disposed between the semiconductor light emitting devices in a direction crossing the longitudinal direction of the first electrode 1020.

According to the illustration, the second electrode 1040 may be placed on the filler 1070 and the insulating member 1170. The second electrode 1040 may be electrically connected to the semiconductor light emitting device 1050 by contact with the semiconductor light emitting device 1050.

The insulating member 1170 may be formed to annularly surround the side surface of the passivation layer 1160. Further, the insulating member 1170 may be disposed on the same plane as the other surface of the second conductivity type semiconductor 1153, and may extend in the direction of the substrate 1010 along the passivation layer 1160. The insulating member 1170 may be made of a material capable of absorbing the laser beam including at least one of polyimide, epoxy, acrylic, phenol, and silicone resin. The insulating member 1170 may be a material that is not damaged by the laser beam used in the transfer process, and is an insulating material.

Further, the insulating member 1170 may further include light reflecting particles such that the reflectance of the insulating member 1170 increases. The light reflecting particles may include at least one of titanium dioxide, barium sulfate, silicon dioxide, and silicon. This can prevent light loss from being generated on the side of the semiconductor light emitting device 1050 through the insulating member 1170. [ In order to more effectively prevent light loss, the light reflecting particles may be 0.1 to 1 占 퐉 particles.

As shown in the figure, the plurality of semiconductor light emitting devices 1050 can form a plurality of rows in a direction parallel to a plurality of electrode lines provided in the first electrode 1020. However, the present invention is not limited thereto. For example, the plurality of semiconductor light emitting devices 1050 may form a plurality of rows along the second electrode 1040.

The adhesive layer 1033 may be disposed between the substrate 1010 where the first electrode 1020 is located and the semiconductor light emitting device 1050. The adhesive layer 1033 may be formed to physically contact the first electrode 1020 and the semiconductor light emitting device 1050. Thus, the semiconductor light emitting device 1050 and the first electrode 1020 may be connected to each other to be electrically conductive. In addition, the adhesive layer 1033 can be formed of silver paste, tin paste, and solder paste. The description of the adhesive layer 1033 is merely exemplary and the present invention is not limited thereto.

Further, in the structure in which the adhesive layer 1033 is disposed, a material that does not flow current may be filled in the gap formed between the semiconductor light emitting devices 1050. In this example, the filler 1070 may be filled in the gap. The filler material 1070 may include an insulating material such as polyimide or a transparent insulating layer. The description of the filler 1070 is merely exemplary and the present invention is not limited thereto.

Furthermore, the display device 1000 may further include a phosphor layer 1080 formed on the plurality of semiconductor light emitting devices 1050. For example, the semiconductor light emitting device 1050 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 1080 converts the blue (B) light into the color of a unit pixel. The phosphor layer 1080 may be a red phosphor 1081 or a green phosphor 1082 constituting an individual pixel. That is, a red phosphor 1081 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 1051a at a position forming a red unit pixel, A green phosphor 1082 capable of converting blue light into green (G) light can be laminated on the blue semiconductor light emitting element 1051b. Further, only the blue semiconductor light emitting element 1051c can be used solely in the portion constituting the blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel. More specifically, phosphors of one color may be laminated along the respective lines of the first electrode 1020. Accordingly, one line in the first electrode 1020 may be an electrode for controlling one color. That is, red (R), green (G), and blue (B) may be arranged in order along the second electrode 1040, and a unit pixel may be realized through the red However, the present invention is not necessarily limited thereto. Instead of the fluorescent material, the semiconductor light emitting device 1050 and the quantum dot QD may be combined to form a unit pixel emitting red (R), green (G) and blue (B) Can be implemented.

In order to improve the contrast of the phosphor layer 1080, the display device may further include a black matrix 1091 disposed between the phosphors. The black matrix 1091 may be formed in such a manner that a gap is formed between the phosphor dots and a black material fills the gap. Through this, the black matrix 1091 absorbs the external light reflection and can improve contrast of light and dark. The black matrix 1091 is located between the respective phosphor layers along the first electrode 1020 in the direction in which the phosphor layers 1080 are stacked. In this case, the phosphor layer is not formed at a position corresponding to the blue semiconductor light emitting element 1051, but the black matrix 1091 has a space without the phosphor layer 1080 therebetween (or the blue semiconductor light emitting element 1051c) Respectively) on both sides. The black matrix 1091 may serve as a barrier to prevent color mixing among the phosphors.

 In addition, in the semiconductor light emitting device 1050 of the present example, the electrodes of the semiconductor light emitting device 1050 can be arranged up and down in this example. Therefore, it has a great advantage that the chip size can be reduced.

Referring to FIG. 11A, the semiconductor light emitting device 1050 may be contacted with the first electrode 1020 of the substrate 1010 through an adhesive layer 1033. In addition, when the display device 1000 is taken along the line E-E, the insulating member 1170 annularly surrounds the passivation layer 1160, so that the insulating member 1170 is disposed on both sides of the passivation layer 1160.

Further, the insulating member 1170 protrudes from the side of the passivation layer 1160 and extends from the side. Further, the insulating member 1170 may be disposed on the same plane as the other surface of the second conductivity type semiconductor 1153 and may extend in the direction of the substrate 1010 along the passivation layer 1160.

11B, an insulating member 1170 can be stacked on the first electrode 1020 of the substrate 1010 and the filler 1070 by taking the display device 1000 along lines E'-E ' . In detail, the substrate 1010 and the first electrode 1020 may be laminated in the order of the line E'-E 'cut along the outer surface of the passivation layer 1160, and the insulating member 1170 may be laminated in the order of the adhesive layer 1033, And the first conductive type electrode. Further, a space spaced apart from the adhesive layer 1033 by the height of the first conductive type electrode may be filled with the filler 1070.

Also, a second electrode 1040 disposed perpendicularly to the first electrode 1020 may be disposed on the insulating member 1170. A red phosphor 1081 or a green phosphor 1082 is disposed on the second electrode 1040, respectively. Further, a black matrix 1091 is disposed between the red phosphor 1081 and the green phosphor 1082 to absorb the reflection of the external light, and the contrast of light and dark can be improved.

Referring to FIG. 12, the semiconductor light emitting device 1050 may be in contact with the first electrode 1020 of the substrate 1010 through the adhesive layer 1033. In addition, when the display device 1000 is taken along line F-F, the insulating member 1170 annularly surrounds the passivation layer 1160, so that the insulating member 1170 is disposed on both sides of the passivation layer 1160.

The second conductive type electrode 1152 is disposed on the second conductive type semiconductor layer 1153 and the insulating member 1170 so as to cover the second conductive type semiconductor layer 1153 and part of the insulating member 1170 do. Further, the second conductive electrode 1152 is disposed in contact with the second electrode 1040. Thus, the semiconductor light emitting device 1050 can make electrical contact with the second electrode 1040.

13 is a conceptual diagram showing a semiconductor light emitting device according to an embodiment of the present invention.

13, the semiconductor light emitting device 1050 includes a first conductive type electrode 1156, a first conductive type semiconductor layer 1155 in which a first conductive type electrode 1156 is formed, An active layer 1154 formed on the first conductivity type semiconductor layer 1155, a second conductive type semiconductor layer 1153 formed on the active layer 1154, a second conductive type electrode 1152 formed on the passivation layer 1160, And an insulating member 1170.

The first conductive type electrode 1156 and the first conductive type semiconductor layer 1155 may be a p-type electrode and a p-type semiconductor layer, respectively, and the second conductive type electrode 1152 and the second conductive type semiconductor layer 1153 May be an n-type electrode and an n-type semiconductor layer, respectively. However, the present invention is not limited thereto, and the first conductivity type may be n-type and the second conductivity type may be p-type.

In detail, the first conductive type electrode 1156 may be disposed on the first conductive type semiconductor layer 1155 and the arrangement of the first conductive type electrode 1156 in the description of the passivation layer 1160 . On the other hand, the second conductive type electrode 1152 is disposed on the second conductive type semiconductor layer 1153 and an insulating member 1170 to be described later. The second conductive type electrode 1152 may be disposed over part of the second conductive type semiconductor layer 1153 and the insulating member 1170.

The active layer 1154 is formed between the other surface of the first conductive type semiconductor layer 1155 and one surface of the second conductive type semiconductor layer 1153. The active layer 1154 emits light by a current flowing between the first conductive-type electrode 1156 and the second conductive-type electrode 1152.

The semiconductor light emitting device includes a first conductive semiconductor layer 1155 and a passivation layer 1160 formed to surround the side surfaces of the second conductive semiconductor layer 1153.

The passivation layer 1160 is formed to cover the side surface of the semiconductor light emitting device to stabilize the characteristics of the semiconductor light emitting device and to be formed of an insulating material. Since the gap between the first conductivity type semiconductor layer 1155 and the second conductivity type semiconductor layer 1153 is electrically disconnected by the passivation layer 1160, the P-type GaN and N -type GaN can be insulated from each other.

In addition, the passivation layer 1160 may include a plurality of layers having different refractive indexes so as to reflect light emitted to the side surface of the semiconductor light emitting device. In addition, the plurality of layers may be repeatedly laminated with a material having a relatively high refractive index and a material having a relatively low refractive index.

In detail, the passivation layer 1160 may include a first portion 1160a, a second portion 1160b. In detail, the first portion 1160a may be formed to cover one surface of the first conductive type semiconductor layer 1155. [ The first portion 1160a is formed to cover and surround the edge of the first conductivity type semiconductor layer 1155 and has a through hole exposing the first conductivity type semiconductor layer 1155 to the outside, The first conductive type electrode 1156 may be disposed on the first conductive type semiconductor layer 1155 exposed through the first conductive type semiconductor layer 1155.

The second portion 1160b may be formed to surround the active layer 1154 of the first conductivity type semiconductor layer 1155 and the second conductivity type semiconductor layer 1153 so that the stability of the semiconductor light emitting element 1050 may be improved. You can get more. Further, the first portion 1160a and the second portion 1160b may be continuous layers.

The insulating member 1170 may be formed to annularly surround the side surface of the passivation layer 1160. The insulating member 1170 has a height up to the same plane as one surface of the passivation layer 1160 on the same plane as the other surface of the second conductive type semiconductor layer 1153 and has a height from the side of the passivation layer 1160 And may protrude 3 to 100 μm from the horizontal to surround the passivation layer. In order for the insulating member 1170 to have a thickness of less than 3 占 퐉, a high-cost fine process must be performed. If the insulating member 1170 is less than 3 占 퐉, the semiconductor light emitting device 1050 can not be sufficiently protected. On the other hand, when the insulating member 1170 is more than 100 μm, it may be limited to arrange the intervals of the semiconductor light emitting devices 1050 in the case of the micro LED having the width of the semiconductor light emitting device 1050 of 100 μm or less. Accordingly, it is preferable that the insulating member 1170 protrudes 3 to 100 占 퐉 from the horizontal side of the passivation layer 1160 to surround the passivation layer.

In detail, the insulating member 1170 is formed in the same shape as the second conductive type semiconductor layer 1153, the active layer 1154, and the first conductive type semiconductor layer 1155, which are surrounded by the passivation layer 1160 described above A second conductivity type semiconductor layer 1153, an active layer 1154, and a first conductivity type semiconductor layer 1155 which are surrounded by a passivation layer 1160.

In one embodiment, when the second conductivity type semiconductor layer 1153, the active layer 1154, and the first conductivity type semiconductor layer 1155 surrounded by the passivation layer 1160 have a hexahedron shape, the insulating member 1170 may have a hexahedron shape As shown in FIG. When the shape of the second conductivity type semiconductor layer 1153, the active layer 1154 and the first conductivity type semiconductor layer 1155 surrounded by the passivation layer 1160 is a columnar shape, the insulating member 1170 may be a columnar Or the like.

In another embodiment, the second conductive type semiconductor layer 1153, the active layer 1154, and the first conductive type semiconductor layer 1155 surrounded by the passivation layer 1160 are formed in a hexahedron shape. However, the insulating member 1170 May be formed in a cylindrical shape to surround the passivation layer 1160. [ The description of the shape of the insulating member 1170 is merely exemplary and the present invention is not limited thereto.

In addition, the insulating member 1170 may include a material capable of absorbing a laser beam used in a transfer process, including at least one of polyimide, epoxy, acrylic, phenol, and silicone resin. In addition, the insulating member 1170 may be a material that is not damaged by the laser beam used in the transfer process, and is insulating. The description of the material of the insulating member 1170 is merely exemplary and the present invention is not limited thereto.

The insulating member 1170 may further include light reflecting particles so that the reflectance of the insulating member 1170 increases. The light reflecting particles may include at least one of titanium dioxide, barium sulfate, silicon dioxide, and silicon. This can prevent light loss from being generated on the side of the semiconductor light emitting device 1050 through the insulating member 1170. [ More specifically, the light reflecting particles of the insulating member 1170 reflect light emitted to the side of the semiconductor light emitting device 1050, and collect light into the semiconductor light emitting device 1050. In order to more effectively prevent light loss, the light reflecting particles may be 0.1 to 1 占 퐉 particles.

The semiconductor light emitting element 1050 can reduce defects due to the scattering phenomenon of the metal material in the adhesive layer 1033 which occurs in the transfer process described later due to the arrangement of the insulating member 1170. [ In addition, the semiconductor light emitting device 1050 can be protected from impact and heat generated during the transfer process, thereby improving the stability and reliability of the semiconductor light emitting device 1050.

Hereinafter, a transfer process for forming the new display device will be described in detail. 14A and 14B are cross-sectional views illustrating a transfer process of transferring the semiconductor light emitting device 1050 formed on the growth substrate W to the substrate 1010. FIG.

14A, a semiconductor light emitting device 1050 includes a second conductive semiconductor layer 1153, an active layer 1154, a first conductive semiconductor layer 1155, a passivation layer A layer 1160 and a first conducting electrode 1156. [

The growth substrate W may be formed of any material having optical transparency, for example, sapphire (Al ₂ O ₃ ), GaN, ZnO, or AlO, but is not limited thereto. Further, the growth substrate W may be formed of a carrier wafer, which is a material suitable for semiconductor material growth. The growth substrate W may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate, for example, a SiC substrate having a higher thermal conductivity than a sapphire (Al ₂ O ₃ ) GaP, InP, and Ga ₂ O ₃ may be used.

In addition, the semiconductor light emitting devices 1050 may be coupled to the substrate 1010 so as to be physically and electrically connected. Specifically, an adhesive layer 1033 is laminated between the semiconductor light emitting element 1050 and the first electrode 1020, and the semiconductor light emitting element 1050 is formed by physically contacting the semiconductor light emitting element 1050 and the first electrode 1020. May be electrically connected to the first electrode 1020. The adhesive layer 1033 may be formed of a silver paste, a tin paste, and a solder paste. The description of the adhesive layer 1033 is merely exemplary and the present invention is not limited thereto.

Referring to FIG. 14B, the semiconductor light emitting device 1050 may be separated from the growth substrate W by a laser lift-off method (LLO) or a chemical lift-off method (CLO). The separation of the semiconductor light emitting element 1050 in the present invention can be preferably performed by a laser lift-off method for separating the semiconductor light emitting element 1050 from the growth substrate W by using the laser beam L.

On the other hand, when the semiconductor light emitting device 1050 is separated using the laser lift-off method, a scattering phenomenon may occur in which the metal material in the adhesive layer 1033 is scattered due to the energy of the applied laser beam L. This scattering phenomenon has caused the problem that metal particles are adhered to the side surface of the semiconductor light emitting device, resulting in a short circuit of the semiconductor light emitting device.

Further, the insulating member 1170 can protect the semiconductor light emitting element 1050 from cracks in the semiconductor light emitting element by the impact and heat caused by the application of the energy by the laser beam (L). The crack may cause leakage current of the semiconductor light emitting device. That is, there is a problem that stability and reliability of the semiconductor light emitting device are reduced due to the generation of cracks.

In the present invention, since the insulating member 1170 surrounds the semiconductor light emitting device 1050, metal particles adhere to the side surface of the semiconductor light emitting device 1050 due to the scattering phenomenon, It is possible to reduce defects. In addition, the insulating member 1170 may absorb shock and heat caused by the application of energy by the laser beam L to prevent cracking of the semiconductor light emitting element 1050.

The above-described display device using the semiconductor light emitting device is not limited to the configuration and the method of the embodiments described above, but all or a part of the embodiments may be selectively combined so that various modifications may be made to the embodiments It is possible.

In the display device according to the present invention, an insulating member surrounding the semiconductor light emitting element is provided, so that the laser beam for separating the semiconductor light emitting element can be prevented from being absorbed into the adhesive layer. Accordingly, it is reduced that the metal material in the adhesive layer is scattered and adheres to the side surface of the semiconductor light emitting element, thereby causing a short circuit of the semiconductor light emitting element.

In the present invention, an insulating member surrounding the semiconductor light emitting device is provided to protect the semiconductor light emitting device from impact and heat generated in the transfer process, and to prevent cracking of the semiconductor light emitting device. This makes it possible to improve process stability and reliability during the transfer process.

Claims (15)

A substrate having a first electrode portion; And
And a plurality of semiconductor light emitting devices electrically connected through the adhesive layer including the first electrode unit and the metal,
Wherein at least one of the semiconductor light-
A first conductive type electrode and a second conductive type electrode;
A first conductive semiconductor layer;
A second conductivity type semiconductor layer overlapping the first conductivity type semiconductor layer;
An active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
A passivation layer formed to surround the first conductive semiconductor layer and the second conductive semiconductor layer; And
And an insulating member annularly surrounding the passivation layer, wherein the insulating member is parallel to the substrate so as to absorb an impact caused by the irradiation of the laser beam, and protrudes horizontally from the side of the passivation layer. Device. The method according to claim 1,
Wherein the insulating member extends from an upper surface of the second conductivity type semiconductor layer to a lower surface of the passivation layer. The method according to claim 1,
Wherein the insulating member protrudes from the side of the passivation layer in a horizontal direction by 3 to 100 占 퐉 to annularly surround the passivation layer. The method of claim 3,
Wherein the insulating member comprises at least one of polyimide, epoxy, acrylic, phenol, and silicone resin. The method of claim 3,
Wherein the insulating member further comprises light reflecting particles so as to increase the reflectance,
Wherein the light reflecting particles comprise at least one of titanium dioxide, barium sulfate, silicon dioxide, and silicon. The method of claim 3,
Wherein the insulating member absorbs the laser beam to prevent the metal material in the adhesive layer from scattering and adhere to the side surface of the semiconductor light emitting device and absorbs or disperses the impact due to the laser beam. Display device. The method according to claim 1,
Wherein the passivation layer includes a first portion covering one surface of the first conductive semiconductor layer,
And a second portion surrounding a side surface of the first conductive type semiconductor layer, a side surface of the active layer, and a side surface of the second conductive type semiconductor layer. 8. The method of claim 7,
Wherein the first portion includes a through hole which is formed so as to surround and surround the edge of the first conductivity type semiconductor layer and expose the first conductivity type semiconductor layer to the outside,
And the first conductive type electrode is disposed in the first conductive type semiconductor layer exposed through the through hole. 8. The method of claim 7,
Wherein the first portion and the second portion are formed as a continuous layer. The method according to claim 1,
Wherein the second conductive type electrode is disposed on the second conductive type semiconductor layer and the insulating member and is disposed over a part of the second conductive type semiconductor layer and the insulating member. A first conductive type electrode and a second conductive type electrode;
A first conductive semiconductor layer;
A second conductivity type semiconductor layer overlapping the first conductivity type semiconductor layer;
An active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
A passivation layer formed to surround the first conductive semiconductor layer and the second conductive semiconductor layer; And
And an insulating member which surrounds the passivation layer in an annular shape, wherein the insulating member is parallel to the substrate so as to absorb an impact caused by the irradiation of the laser beam, and protrudes horizontally from the side surface of the passivation layer. Light emitting element. 12. The method of claim 11,
Wherein the insulating member extends from an upper surface of the second conductivity type semiconductor layer to a lower surface of the passivation layer. 12. The method of claim 11,
Wherein the insulating member surrounds a side surface of the passivation layer,
Wherein the insulating member protrudes from the side of the passivation layer in a horizontal direction by 3 to 100 占 퐉 to annularly surround the passivation layer. 12. The method of claim 11,
Wherein the insulating member comprises at least one of polyimide, epoxy, acrylic, phenol, and silicone resin. 12. The method of claim 11,
Wherein the insulating member further comprises light reflecting particles so as to increase the reflectance,
Wherein the light reflecting particles include at least one of titanium dioxide, barium sulfate, silicon dioxide, and silicon.

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