KR101620469B1 - Fabricating method of display apparatus using semiconductor light emitting device - Google Patents

Abstract

The present invention relates to a manufcturing method of a display apparatus using a semiconductor light emitting device, capable of providing a new manufacturing process to realize a flexible display apparatus. The manufacturing method comprises the steps of: accommodating semiconductor light emitting devices on an assembly substrate in a chamber filled with fluid; arranging a conductive adhesive layer on a wiring substrate having wiring electrodes thereon; attaching the assembly substrate to the conductive adhesive layer to align the semiconductor light emitting devices to the wiring electrode; and removing the assembly substrate from the wiring substrate, and applying heat or a catalyst while pressing the conductive adhesive layer to electrically connect the semiconductor light emitting devices and the wiring electrode.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing a display device using a semiconductor light-

The present invention relates to a method of manufacturing a display device, and more particularly, to a method of manufacturing a display device using a semiconductor light emitting device.

In recent years, display devices having excellent characteristics such as a thin shape and a flexible shape in the field of display technology have been developed. On the other hand, major displays that are commercialized today are represented by LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes).

However, in the case of LCD, there is a problem that the reaction time is not fast and the implementation of flexible is difficult. In the case of AMOLED, there is a weak point that the lifetime is short, the mass production yield is not good, and the degree of flexible is weak.

Light emitting diodes (LEDs) are well-known semiconductor light emitting devices that convert current into light. In 1962, red LEDs using GaAsP compound semiconductors were commercialized, Has been used as a light source for a display image of an electronic device including a communication device. Accordingly, a method of solving the above problems by implementing a flexible display using the semiconductor light emitting device can be presented.

However, in the case of a flexible display using a semiconductor light emitting element, it is difficult to realize a large display device. Therefore, a fabrication process capable of realizing a large display device in a flexible display using a semiconductor light emitting device can be considered.

An object of the present invention is to provide a new manufacturing process for implementing a flexible display device.

Another object of the present invention is to provide a simple manufacturing process which is applicable to a display device of a large screen.

According to another aspect of the present invention, there is provided a method of manufacturing a display device, including: mounting a semiconductor light emitting device on an assembly substrate in a chamber filled with a fluid; Attaching the assembly substrate to the conductive adhesive layer so that the semiconductor light emitting elements are aligned with the wiring electrode; removing the assembly substrate from the wiring substrate; And applying heat or catalyst while applying pressure to the conductive adhesive layer such that the elements are electrically connected to the wiring electrode.

In an exemplary embodiment, the assembly substrate is formed with grooves on which the semiconductor light emitting devices are mounted at positions where the semiconductor light emitting devices are aligned with the wiring electrodes. The step of adhering to the conductive adhesive layer may be performed after the semiconductor light emitting elements fill the grooves.

In an embodiment, the step of applying heat or catalyst may be performed after removing the assembly substrate from the wiring substrate.

In an embodiment, a manufacturing method of a display device further includes forming a phosphor layer to cover the semiconductor light emitting elements.

In one embodiment of the present invention, the semiconductor light emitting devices each include a first conductive type electrode and a second conductive type electrode electrically connected to the wiring electrode, wherein at least one of the first conductive type electrode and the second conductive type electrode May be formed on both surfaces of the semiconductor light emitting devices, which are opposite to each other.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: mounting a semiconductor light emitting device on an assembly substrate in a chamber filled with a fluid; separating the assembly substrate and the transfer substrate after attaching them so as to move the semiconductor light emitting devices to the transfer substrate; And transferring the light emitting elements from the transfer substrate to the substrate of the display device.

In the embodiment, the transferring may include attaching the transfer substrate to a temporary substrate via a conductive adhesive layer, and removing the transfer substrate from the temporary substrate; And removing the temporary substrate from the wiring substrate after the wiring substrate on which the wiring electrode is formed is attached to the temporary substrate.

In an embodiment, the conductive adhesive layer may be detached from the transfer substrate and attached to the temporary substrate when the transfer substrate is removed from the temporary substrate.

In the embodiment, in the removing step, heat or a catalyst may be applied to the conductive adhesive layer after the wiring substrate having the wiring electrodes formed thereon is attached to the temporary substrate.

In the embodiment, the transferring may include attaching the transfer substrate to a base substrate using an adhesive layer, separating the display substrate from the base substrate with the semiconductor light emitting element attached to the adhesive layer, And forming a wiring electrode electrically connected to the semiconductor light emitting devices.

In an embodiment, the adhesive layer may be detached from the transfer substrate and attached to the base substrate when the transfer substrate is separated from the base substrate.

In an embodiment, the transfer substrate may be formed of PDMS (polydimethylsiloxane).

According to the present invention configured as described above, in a display device in which individual pixels are formed of semiconductor light emitting elements, a large amount of semiconductor light emitting elements can be assembled at a time.

As described above, according to the present invention, it is possible to convert a semiconductor light emitting device into a large quantity on a wafer of a small size, and then transfer the semiconductor light emitting device to a large area substrate. Thus, it becomes possible to manufacture a large-area display device at a low cost.

Further, according to the manufacturing method of the present invention, it becomes possible to integrate elements having different materials or types in different shapes at a time.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.
Fig. 2 is a partially enlarged view of part A of Fig. 1, and Figs. 3a and 3b are cross-sectional views taken along line BB and CC of Fig.
4 is a conceptual diagram showing a flip chip type semiconductor light emitting device of FIG.
FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.
6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.
7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention.
8 is a cross-sectional view taken along the line CC of Fig.
9 is a conceptual diagram showing a vertical semiconductor light emitting device of FIG.
10A to 10H are conceptual diagrams for explaining a new process for manufacturing the semiconductor light emitting device described above.
Figs. 11A and 11B are cross-sectional views showing modifications of the semiconductor light emitting device applied to the manufacturing process of Figs. 10A to 10H.
12A to 12E are conceptual diagrams for explaining another process for manufacturing the above-described semiconductor light emitting device.
13A to 13D are conceptual diagrams for explaining another process for manufacturing the above-described semiconductor light emitting device.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals are used to designate identical or similar elements, and redundant description thereof will be omitted. The suffix "module" and " part "for the components used in the following description are given or mixed in consideration of ease of specification, and do not have their own meaning or role. In the following description of the embodiments of the present invention, a detailed description of related arts will be omitted when it is determined that the gist of the embodiments disclosed herein may be blurred. In addition, it should be noted that the attached drawings are only for easy understanding of the embodiments disclosed in the present specification, and should not be construed as limiting the technical idea disclosed in the present specification by the attached drawings.

It is also to be understood that when an element such as a layer, region or substrate is referred to as being present on another element "on," it is understood that it may be directly on the other element or there may be an intermediate element in between There will be.

The display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation device, a slate PC, , A Tablet PC, an Ultra Book, a digital TV, a desktop computer, and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiments described herein may be applied to a device capable of being displayed, even in the form of a new product to be developed in the future.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.

According to the illustrated example, the information processed in the control unit of the display device 100 may be displayed using a flexible display.

The flexible display includes a display that can be bent, twistable, collapsible, and curlable, which can be bent by an external force. For example, a flexible display can be a display made on a thin, flexible substrate that can be bent, bent, folded or rolled like paper while maintaining the display characteristics of conventional flat panel displays.

In a state where the flexible display is not bent (for example, a state having an infinite radius of curvature, hereinafter referred to as a first state), the display area of the flexible display is flat. In the first state, the display area may be a curved surface in a state of being bent by an external force (for example, a state having a finite radius of curvature, hereinafter referred to as a second state). As shown in the figure, the information displayed in the second state may be time information output on the curved surface. Such visual information is realized by independently controlling the emission of a sub-pixel arranged in a matrix form. The unit pixel means a minimum unit for implementing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as one type of semiconductor light emitting device for converting a current into light. The light emitting diode is formed in a small size, so that it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in detail with reference to the drawings.

FIG. 2 is a partial enlarged view of a portion A of FIG. 1, FIGS. 3 A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2, FIG. 4 is a conceptual view of a flip chip type semiconductor light emitting device of FIG. FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.

Referring to FIGS. 2, 3A and 3B, a display device 100 using a passive matrix (PM) semiconductor light emitting device as a display device 100 using a semiconductor light emitting device is illustrated. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 100 includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and a plurality of semiconductor light emitting devices 150.

The substrate 110 may be a flexible substrate. For example, to implement a flexible display device, the substrate 110 may comprise glass or polyimide (PI). In addition, any insulating material such as PEN (polyethylene naphthalate) and PET (polyethylene terephthalate) may be used as long as it is insulating and flexible. In addition, the substrate 110 may be either a transparent material or an opaque material.

The substrate 110 may be a wiring substrate on which the first electrode 120 is disposed, so that the first electrode 120 may be positioned on the substrate 110.

The insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is located and the auxiliary electrode 170 may be disposed on the insulating layer 160. In this case, a state in which the insulating layer 160 is laminated on the substrate 110 may be one wiring substrate. More specifically, the insulating layer 160 is formed of a flexible material such as polyimide (PI), polyimide (PET), or PEN, and is integrally formed with the substrate 110 to form a single substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150 and is disposed on the insulating layer 160 and corresponds to the position of the first electrode 120. For example, the auxiliary electrode 170 may be in the form of a dot and may be electrically connected to the first electrode 120 by an electrode hole 171 passing through the insulating layer 160. The electrode hole 171 may be formed by filling a via hole with a conductive material.

Referring to these drawings, the conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not limited thereto. For example, a layer having a specific function may be formed between the insulating layer 160 and the conductive adhesive layer 130, or a structure in which the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160 It is also possible. In the structure in which the conductive adhesive layer 130 is disposed on the substrate 110, the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity. To this end, the conductive adhesive layer 130 may be mixed with a substance having conductivity and a substance having adhesiveness. Also, the conductive adhesive layer 130 has ductility, thereby enabling the flexible function in the display device.

As an example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 may be formed as a layer having electrical insulation in the horizontal X-Y direction while permitting electrical interconnection in the Z direction passing through the thickness. Accordingly, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (hereinafter, referred to as a conductive adhesive layer).

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member. When heat and pressure are applied, only a specific part of the anisotropic conductive film has conductivity due to the anisotropic conductive medium. Hereinafter, the anisotropic conductive film is described as being subjected to heat and pressure, but other methods may be used to partially conduct the anisotropic conductive film. In this method, for example, either the heat or the pressure may be applied, or UV curing may be performed.

In addition, the anisotropic conduction medium can be, for example, a conductive ball or a conductive particle. According to the example, in the present example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member. When heat and pressure are applied, only specific portions are conductive by the conductive balls. The anisotropic conductive film may be a state in which a plurality of particles coated with an insulating film made of a polymer material are contained in the core of the conductive material. In this case, the insulating film is broken by heat and pressure, . At this time, the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and the electrical connection in the Z-axis direction is partially formed by the height difference of the mating member adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state in which a plurality of particles coated with a conductive material are contained in the insulating core. In this case, the conductive material is deformed (pressed) to the portion where the heat and the pressure are applied, so that the conductive material becomes conductive in the thickness direction of the film. As another example, it is possible that the conductive material penetrates the insulating base member in the Z-axis direction and has conductivity in the thickness direction of the film. In this case, the conductive material may have a pointed end.

According to the present invention, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of an insulating base member. More specifically, the insulating base member is formed of a material having adhesiveness, and the conductive ball is concentrated on the bottom portion of the insulating base member, and is deformed together with the conductive ball when heat and pressure are applied to the base member So that they have conductivity in the vertical direction.

However, the present invention is not limited thereto. The anisotropic conductive film may be formed by randomly mixing conductive balls into an insulating base member or by forming a plurality of layers in which a conductive ball is placed in a double- ACF) are all available.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which a conductive ball is mixed with an insulating and adhesive base material. In addition, solutions containing conductive particles can be solutions in the form of conductive particles or nanoparticles.

Referring again to FIG. 5, the second electrode 140 is located in the insulating layer 160, away from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed.

After the conductive adhesive layer 130 is formed in a state where the auxiliary electrode 170 and the second electrode 140 are positioned in the insulating layer 160, the semiconductor light emitting device 150 is connected to the semiconductor light emitting device 150 in a flip chip form The semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.

Referring to FIG. 4, the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type semiconductor layer 155 in which a p-type electrode 156, a p-type electrode 156 are formed, an active layer 154 formed on the p-type semiconductor layer 155, And an n-type electrode 152 disposed on the n-type semiconductor layer 153 and the p-type electrode 156 on the n-type semiconductor layer 153 and 154 in the horizontal direction. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 by the conductive adhesive layer 130, and the n-type electrode 152 may be electrically connected to the second electrode 140.

Referring again to FIGS. 2, 3A and 3B, the auxiliary electrode 170 is elongated in one direction, and one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150. For example, the p-type electrodes of the right and left semiconductor light emitting elements may be electrically connected to one auxiliary electrode around the auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 by heat and pressure, and the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 through the p- And only the portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 has conductivity and the semiconductor light emitting device does not have a conductive property because the semiconductor light emitting device is not press- The conductive adhesive layer 130 not only couples the semiconductor light emitting device 150 and the auxiliary electrode 170 and the semiconductor light emitting device 150 and the second electrode 140 but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitute a light emitting element array, and the phosphor layer 180 is formed in the light emitting element array.

The light emitting element array may include a plurality of semiconductor light emitting elements having different brightness values. Each of the semiconductor light emitting devices 150 constitutes a unit pixel and is electrically connected to the first electrode 120. For example, the first electrodes 120 may be a plurality of semiconductor light emitting devices, and the semiconductor light emitting devices may be electrically connected to any one of the plurality of first electrodes.

Also, since the semiconductor light emitting devices are connected in a flip chip form, the semiconductor light emitting devices grown on the transparent dielectric substrate can be used. The semiconductor light emitting devices may be, for example, a nitride semiconductor light emitting device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size.

According to the structure, the barrier ribs 190 may be formed between the semiconductor light emitting devices 150. In this case, the barrier ribs 190 may separate the individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130. For example, by inserting the semiconductor light emitting device 150 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier 190 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, the barrier ribs 190 may be provided separately from the reflective barrier ribs. In this case, the barrier rib 190 may include a black or white insulation depending on the purpose of the display device. When a barrier of a white insulator is used, an effect of enhancing reflectivity may be obtained. When a barrier of a black insulator is used, a contrast characteristic may be increased while having a reflection characteristic.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 180 converts the blue (B) light into the color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting an individual pixel.

That is, a red phosphor 181 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 151 at a position forming a red unit pixel, A green phosphor 182 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 151. [ In addition, only the blue semiconductor light emitting element 151 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel. More specifically, phosphors of one color may be stacked along each line of the first electrode 120. Accordingly, one line in the first electrode 120 may be an electrode for controlling one color. In other words, red (R), green (G), and blue (B) may be arranged in order along the second electrode 140, thereby realizing a unit pixel.

(R), green (G), and blue (B) unit pixels may be implemented by combining the semiconductor light emitting device 150 and the quantum dot QD instead of the fluorescent material. have.

In addition, a black matrix 191 may be disposed between each of the phosphor layers to improve contrast. That is, the black matrix 191 can improve the contrast of light and dark.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied.

5A, each of the semiconductor light emitting devices 150 includes gallium nitride (GaN), indium (In) and / or aluminum (Al) are added together to form a high output light Device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a unit pixel (sub-pixel), respectively. For example, red, green, and blue semiconductor light emitting elements R, G, and B are alternately arranged, and red, green, and blue unit pixels Form a single pixel, through which a full color display can be implemented.

Referring to FIG. 5B, the semiconductor light emitting device may include a white light emitting device W having a yellow phosphor layer for each individual device. In this case, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light emitting element W to form a unit pixel. Further, a unit pixel can be formed by using a color filter in which red, green, and blue are repeated on the white light emitting element W.

Referring to FIG. 5C, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the ultraviolet light emitting element UV. As described above, the semiconductor light emitting device can be used not only for visible light but also for ultraviolet (UV), and can be extended to a form of a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of the upper phosphor .

The semiconductor light emitting device 150 is disposed on the conductive adhesive layer 130 and constitutes a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 150 may be 80 mu m or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

Also, even if a square semiconductor light emitting device 150 having a length of 10 m on one side is used as a unit pixel, sufficient brightness for forming a display device appears. Accordingly, when the unit pixel is a rectangular pixel having a side of 600 mu m and the other side of 300 mu m as an example, the distance of the semiconductor light emitting element becomes relatively large. Accordingly, in such a case, it becomes possible to implement a flexible display device having HD picture quality.

The display device using the semiconductor light emitting device described above can be manufactured by a novel manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG.

6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

The conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed. A first electrode 120, an auxiliary electrode 170, and a second electrode 140 are formed on the wiring substrate, and the insulating layer 160 is formed on the first substrate 110 to form a single substrate (or a wiring substrate) . In this case, the first electrode 120 and the second electrode 140 may be arranged in mutually orthogonal directions. In addition, the first substrate 110 and the insulating layer 160 may include glass or polyimide (PI), respectively, in order to implement a flexible display device.

The conductive adhesive layer 130 may be formed, for example, by an anisotropic conductive film, and an anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is disposed.

A second substrate 112 corresponding to the positions of the auxiliary electrode 170 and the second electrodes 140 and having a plurality of semiconductor light emitting elements 150 constituting individual pixels is disposed on the semiconductor light emitting element 150 Are arranged so as to face the auxiliary electrode 170 and the second electrode 140.

In this case, the second substrate 112 is a growth substrate for growing the semiconductor light emitting device 150, and may be a spire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in units of wafers, the semiconductor light emitting device can be effectively used in a display device by having an interval and a size at which a display device can be formed.

Then, the wiring substrate and the second substrate 112 are thermally bonded. For example, the wiring board and the second substrate 112 may be thermocompression-bonded using an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermocompression bonding. Only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity due to the characteristics of the anisotropic conductive film having conductivity by thermocompression, The device 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and partition walls may be formed between the semiconductor light emitting devices 150.

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO).

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating a wiring substrate on which the semiconductor light emitting device 150 is coupled with silicon oxide (SiOx) or the like.

Further, the method may further include forming a phosphor layer on one surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red phosphor or a green phosphor for converting the blue (B) A layer can be formed on one surface of the device.

The manufacturing method and structure of the display device using the semiconductor light emitting device described above can be modified into various forms. For example, a vertical semiconductor light emitting device may be applied to the display device described above. Hereinafter, the vertical structure will be described with reference to Figs. 5 and 6. Fig.

In the modifications or embodiments described below, the same or similar reference numerals are given to the same or similar components as those of the previous example, and the description is replaced with the first explanation.

8 is a cross-sectional view taken along the line CC of FIG. 7, and FIG. 9 is a conceptual view illustrating a vertical semiconductor light emitting device of FIG. 8. FIG. 7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, to be.

Referring to these drawings, the display device may be a display device using a passive matrix (PM) vertical semiconductor light emitting device.

The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and a plurality of semiconductor light emitting devices 250.

The substrate 210 is a wiring substrate on which the first electrode 220 is disposed. The substrate 210 may include polyimide (PI) to implement a flexible display device. In addition, any insulating and flexible material may be used.

The first electrode 220 is disposed on the substrate 210 and may be formed as a long bar electrode in one direction. The first electrode 220 may serve as a data electrode.

A conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is located. The conductive adhesive layer 230 may be formed of an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing a conductive particle, or the like, as in a display device using a flip chip type light emitting device. ) And the like. However, the present embodiment also exemplifies the case where the conductive adhesive layer 230 is realized by the anisotropic conductive film.

If the semiconductor light emitting device 250 is connected to the semiconductor light emitting device 250 by applying heat and pressure after the anisotropic conductive film is positioned in a state where the first electrode 220 is positioned on the substrate 210, And is electrically connected to the electrode 220. In this case, the semiconductor light emitting device 250 may be disposed on the first electrode 220.

As described above, the electrical connection is generated because heat and pressure are applied to the anisotropic conductive film to partially conduct in the thickness direction. Therefore, in the anisotropic conductive film, it is divided into a portion 231 having conductivity in the thickness direction and a portion 232 having no conductivity.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 realizes electrical connection as well as mechanical bonding between the semiconductor light emitting element 250 and the first electrode 220.

Thus, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 250 may be 80 μm or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 electrically connected to the vertical semiconductor light emitting device 250 are disposed between the vertical semiconductor light emitting devices in a direction crossing the longitudinal direction of the first electrode 220.

9, the vertical type semiconductor light emitting device includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255 An n-type semiconductor layer 253 formed on the active layer 254 and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom may be electrically connected to the first electrode 220 by the conductive adhesive layer 230, and the n-type electrode 252 located at the top may be electrically connected to the second electrode 240 As shown in FIG. Since the vertical semiconductor light emitting device 250 can arrange the electrodes up and down, it has a great advantage that the chip size can be reduced.

Referring to FIG. 8 again, a phosphor layer 280 may be formed on one side of the semiconductor light emitting device 250. For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and a phosphor layer 280 for converting the blue (B) . In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 251 at a position forming a red unit pixel, A green phosphor 282 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 251. In addition, only the blue semiconductor light emitting element 251 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied to a display device to which a flip chip type light emitting device is applied, as described above.

The second electrode 240 is located between the semiconductor light emitting devices 250 and electrically connected to the semiconductor light emitting devices 250. For example, the semiconductor light emitting devices 250 may be disposed in a plurality of rows, and the second electrode 240 may be disposed between the columns of the semiconductor light emitting devices 250.

The second electrode 240 may be positioned between the semiconductor light emitting devices 250 because the distance between the semiconductor light emitting devices 250 forming the individual pixels is sufficiently large.

The second electrode 240 may be formed as a long bar-shaped electrode in one direction and may be disposed in a direction perpendicular to the first electrode.

The second electrode 240 and the semiconductor light emitting device 250 may be electrically connected by a connection electrode protruding from the second electrode 240. More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a part of the ohmic electrode by printing or vapor deposition. Accordingly, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 can be electrically connected.

According to the example, the second electrode 240 may be disposed on the conductive adhesive layer 230. A transparent insulating layer (not shown) containing silicon oxide (SiOx) or the like may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. In addition, the second electrode 240 may be formed spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as ITO (Indium Tin Oxide) is used for positioning the second electrode 240 on the semiconductor light emitting device 250, the problem that the ITO material has poor adhesion with the n-type semiconductor layer have. Accordingly, the present invention has an advantage in that the second electrode 240 is positioned between the semiconductor light emitting devices 250, so that a transparent electrode such as ITO is not used. Therefore, the light extraction efficiency can be improved by using a conductive material having good adhesiveness with the n-type semiconductor layer as a horizontal electrode without being bound by transparent material selection.

According to the structure, the barrier ribs 290 may be positioned between the semiconductor light emitting devices 250. That is, the barrier ribs 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 forming the individual pixels. In this case, the barrier ribs 290 may separate the individual unit pixels from each other, and may be formed integrally with the conductive adhesive layer 230. For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier ribs 290 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, as the partition 190, a reflective barrier may be separately provided. The barrier ribs 290 may include black or white insulators depending on the purpose of the display device.

If the second electrode 240 is directly disposed on the conductive adhesive layer 230 between the semiconductor light emitting devices 250, the barrier ribs 290 may be formed between the vertical semiconductor light emitting device 250 and the second electrode 240 As shown in FIG. Therefore, individual unit pixels can be formed with a small size by using the semiconductor light emitting device 250, and the distance between the semiconductor light emitting device 250 can be relatively large enough so that the second electrode 240 can be electrically connected to the semiconductor light emitting device 250 ), And it is possible to realize a flexible display device having HD picture quality.

In addition, according to the present invention, a black matrix 291 may be disposed between the respective phosphors to improve the contrast. That is, this black matrix 291 can improve the contrast of light and dark.

As described above, the semiconductor light emitting device 250 is disposed on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. Therefore, a full color display in which red (R), green (G), and blue (B) unit pixels form one pixel can be realized by the semiconductor light emitting device.

In the display device using the semiconductor light emitting device of the present invention described above, the semiconductor light emitting device formed on the wafer and formed through mesa and isolation is used as an individual pixel. Therefore, there is a problem that it is difficult to realize a large screen display due to the size limitation of the wafer. The present invention proposes a new manufacturing method and structure of a display device that can solve such a problem.

Hereinafter, a new manufacturing method of the display device will be described. FIGS. 10A to 10H are conceptual diagrams for explaining a new process for manufacturing the semiconductor light emitting device described above, and FIGS. 11A and 11B are cross-sectional views showing modifications of the semiconductor light emitting device applied to the manufacturing process of FIGS. 10A to 10H .

In this specification, a display device 1000 using a passive matrix (PM) type semiconductor light emitting device is exemplified. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

First, according to the manufacturing method, the first conductivity type semiconductor layer 1053, the active layer 1054, and the second conductivity type semiconductor layer 1055 are grown on the growth substrate 1059 (FIG. 10A).

When the first conductivity type semiconductor layer 1053 is grown, an active layer 1054 is grown on the first conductivity type semiconductor layer 1053 and then a second conductivity type semiconductor layer 1054 is formed on the active layer 1054. Next, Layer 1055 is grown. When the first conductivity type semiconductor layer 1053, the active layer 1054 and the second conductivity type semiconductor layer 1055 are sequentially grown as described above, the first conductivity type semiconductor layer 1053, The active layer 1054, and the second conductivity type semiconductor layer 1055 form a laminated structure.

The growth substrate 1059 (wafer) may be formed of any material having optical transparency, for example, sapphire (Al 2 O 3), GaN, ZnO, or AlO, but is not limited thereto. Further, the growth substrate 1059 may be formed of a carrier wafer, which is a material suitable for semiconductor material growth. And may include a conductive substrate or an insulating substrate, for example, a SiC substrate having higher thermal conductivity than a sapphire (Al2O3) substrate, or at least one of Si, GaAs, GaP, InP and Ga2O3 Can be used.

Next, at least a part of the active layer 1054 and the second conductivity type semiconductor layer 1055 are removed to expose at least a part of the first conductivity type semiconductor layer 1053 (FIG. 10B).

In this case, the active layer 1054 and the second conductivity type semiconductor layer 1055 are partially removed in the vertical direction, and the first conductivity type semiconductor layer 1053 is exposed to the outside.

Further, isolation is performed so that a plurality of light emitting devices formed through the above-described manufacturing method forms a light emitting device array. That is, the second conductivity type semiconductor layer 1055 and the active layer 1054 are etched to form a plurality of semiconductor light emitting devices.

Next, a first electrode (not shown) having a height difference in the thickness direction is formed between the first conductivity type semiconductor layer 1053 and the second conductivity type semiconductor layer 1055 so that a flip chip type light emitting device is realized. 1052, or an n-type electrode) and a second electrode 1056 (or a p-type electrode), respectively. The first electrode 1052 and the second electrode 1056 may be formed by a deposition method such as sputtering, but the present invention is not limited thereto.

Then, the growth substrate 1059 is removed to provide a plurality of semiconductor light emitting devices. For example, the growth substrate 1059 can be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO) (FIG. 10C).

Thereafter, a step in which the semiconductor light emitting elements 1050 is seated on the assembly substrate 1061 in a fluid-filled chamber proceeds (FIG. 10D).

For example, the semiconductor light emitting devices 1050 and the assembly substrate 1061 are placed in a chamber filled with a fluid, and the fluid is heated so that the semiconductor light emitting devices are assembled to the assembly substrate 1061 by themselves. For this, the assembly substrate 1061 may be provided with grooves (not shown) in which the semiconductor light emitting devices 1050 are inserted. Specifically, grooves are formed on the assembly substrate 1061 in which the semiconductor light emitting devices 1050 are seated at positions where the semiconductor light emitting devices 1050 are aligned with the wiring electrodes. The grooves are formed in a shape corresponding to the shape of the semiconductor light emitting elements 1050, and the semiconductor light emitting elements 1050 are randomly moved in the fluid and assembled into the grooves.

 Next, the conductive adhesive layer 1030 is disposed on the wiring substrate 1010 on which the wiring electrodes are formed. However, disposing the conductive adhesive layer 1030 on the wiring substrate 1010 can be performed independently of the process of growing the above-described semiconductor light emitting device and placing it on the assembly substrate, regardless of the order of time.

In this case. A first electrode 1020, an auxiliary electrode 1070 and a second electrode 1040 (see FIG. 10E) are disposed on the wiring substrate 1010. In this case, the first electrode 1020 and the second electrode 1040 may be arranged in directions orthogonal to each other. In addition, in order to implement a flexible display device, the wiring substrate 1010 may include glass or polyimide (PI).

The conductive adhesive layer 1030 may in this case be, for example, an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, and the like. As another example, a film containing a substance that chemically changes to a conductive material by heat or the like is also possible.

In this example, the conductive adhesive layer 1030 may be formed by an anisotropic conductive film, and an anisotropic conductive film may be applied to the wiring substrate 1010. [

Next, the assembly substrate 1061 is attached to the conductive adhesive layer 1030 such that the semiconductor light emitting devices 1050 are aligned with the wiring electrodes (FIG. 10E).

For example, when the semiconductor light emitting device 1050 is mounted on the auxiliary electrode 1070 and the second electrode 1040 (see FIG. 10E), the assembly substrate 1061 on which the plurality of semiconductor light emitting devices 1050 constituting the individual pixels are positioned, See FIG. Thereafter, the assembly substrate is joined to the conductive adhesive layer 1030 (Fig. 10F).

The step of attaching to the conductive adhesive layer may be performed after the semiconductor light emitting elements 1050 fill the grooves. The grooves of the assembly substrate 1061 are formed at predetermined positions so that the semiconductor light emitting device forms individual pixels. In the display device, the step of mounting the semiconductor light emitting elements 1050 on the assembly substrate 1061 is performed until all of the grooves are filled, so that the portion where the semiconductor light emitting element is missing does not appear, Step can proceed.

Next, a step of removing the assembly substrate 1061 from the wiring substrate 1010 is performed (FIG. 10G). For example, the assembly substrate 1061 can be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO).

Then, heat or catalyst is applied (FIG. 10H) while pressing the conductive adhesive layer 1030 such that the semiconductor light emitting elements 1050 are electrically connected to the wiring electrode. The step of applying heat or catalyst is performed after removing the assembly substrate 1061 from the wiring substrate 1010.

For example, the wiring board 1010 and the conductive adhesive layer 1030 are thermally bonded to each other and can be bonded together with the above bonding. For example, the wiring substrate 1010 and the conductive adhesive layer 1030 may be thermocompression bonded using an ACF press head. The wiring substrate 1010 and the conductive adhesive layer 1030 are bonded by the thermocompression bonding. Only the portion between the semiconductor light emitting element 1050 and the auxiliary electrode 1070 and the second electrode 1040 has conductivity due to the characteristics of the anisotropic conductive film having conductivity by thermocompression, Device 1050 may be electrically connected.

At this time, the semiconductor light emitting element 1050 is inserted into the anisotropic conductive film, and a partition wall may be formed between the semiconductor light emitting elements 1050.

In this case, a transparent insulating layer (not shown) may be formed by coating silicon oxide (SiOx) or the like on the wiring substrate to which the semiconductor light emitting element 1050 is bonded.

In addition, the manufacturing process of the present invention may further include forming a phosphor layer on one surface of the semiconductor light emitting device 1050. The phosphor covers the semiconductor light emitting devices. For example, the semiconductor light emitting device 1050 is a blue semiconductor light emitting device that emits blue (B) light, and a red phosphor or a green phosphor for converting the blue (B) A layer can be formed on one surface of the device.

Also, the present invention can be applied to a vertical type semiconductor light emitting device. In the case of the vertical type semiconductor light emitting device, the first electrode 220 (see FIG. 8) may be formed on the wiring substrate, and may be electrically connected to the p-type electrode located below the semiconductor light emitting device . After the main bonding, the step of forming a second electrode 240 (see FIG. 8) electrically connected to the n-type electrode located on the vertical semiconductor light emitting device may be performed. In this case, the step of forming the above-described phosphor layer may be performed after forming the second electrode.

As another example, the manufacturing process of the present invention can be applied to a structure in which a p-type electrode and an n-type electrode are arranged up / down even in a horizontal semiconductor light emitting element. Referring to FIG. 11A, in the semiconductor light emitting device of this example, the n-type electrode extends from one surface of the n-type semiconductor layer to the opposite surface, and the p-type electrode stacked on the p- Plane. In this case, the first electrode may be formed on the wiring substrate, and the second electrode may be electrically connected to the n-type electrode after the main adhesion.

The semiconductor light emitting device 1250 includes a first conductive type semiconductor layer 1255 in which a first conductive type electrode 1256 and a first conductive type electrode 1256 are formed, A second conductive type electrode 1252 formed on the second conductive type semiconductor layer 1253 and the second conductive type semiconductor layer 1253 formed on the active layer 1254; .

More specifically, the first conductive type electrode 1256 and the first conductive type semiconductor layer 1255 may be a p-type electrode and a p-type semiconductor layer, respectively, and the second conductive type electrode 1252 and the second The conductive semiconductor layer 1253 may be an n-type electrode and an n-type semiconductor layer, respectively. However, the present invention is not limited thereto, and the first conductivity type may be n-type and the second conductivity type may be p-type.

In this case, the second conductive type electrode is disposed on one surface of the second conductive type semiconductor layer 1253, and an undoped semiconductor layer 1253a is formed on the other surface of the second conductive type semiconductor layer 1253 May be formed.

According to the embodiment, one surface of the second conductive type semiconductor layer may be a surface closest to the wiring substrate, and the other surface of the second conductive type semiconductor layer may be a surface farthest from the wiring substrate. The first conductive type electrode 1256 and the second conductive type electrode 1252 may have a height difference from each other in the width direction and the vertical direction (or in the thickness direction) at positions spaced apart along the width direction of the semiconductor light emitting device .

The second conductive type electrode 1252 is formed on the second conductive type semiconductor layer 1253 using the height difference but adjacent to the second electrode 1240 located on the upper side of the semiconductor light emitting element . For example, at least a portion of the second conductive electrode 1252 may extend from the side of the second conductive type semiconductor layer 1253 (or the side of the undoped semiconductor layer 1253a) As shown in FIG. Since the second conductive electrode 1252 protrudes from the side surface, the second conductive electrode 1252 may be exposed to the upper side of the semiconductor light emitting device. The second conductive electrode 1252 is disposed at a position overlapping the second electrode 1240 disposed on the conductive adhesive layer 1230.

According to this structure, a plug-type electrode is formed over the N-GaN region of the isolated device and the outer region of the device, which can be utilized for both the advantages of the horizontal semiconductor light emitting device and the vertical semiconductor light emitting device Lt; / RTI > structure. In this structure, the electric current flows in the horizontal direction, but the P and N wires for current injection into the panel are located on the opposite side of the device. Further, there is an advantage that the N wiring passing to the lower portion of the device does not have a portion covering the light emitting region (MQW region), and thus the light loss is small.

As another example, referring to FIG. 11B, each of the semiconductor light emitting devices 1350 includes a first conductive electrode and a second conductive electrode that are electrically connected to the wiring electrode, And at least one of the first and second conductive electrodes may be formed on both surfaces of the semiconductor light emitting devices opposite to each other.

The semiconductor light emitting device includes a first conductive type semiconductor layer 1355, an active layer 1354, a second conductive type semiconductor layer 1353, and the first conductive type semiconductor layer 1355 which are sequentially stacked A first conductive type electrode 1356 and a second conductive type electrode 1352 connected to the second conductive type semiconductor layer 1353.

The first conductive type electrode 1356 includes a first conductive type upper electrode portion 1356a and a first conductive type lower electrode portion 1356b disposed corresponding to each other with the first conductive type semiconductor layer 1355 therebetween, .

The second conductive type electrode 1352 includes a second conductive type upper electrode part 1352a and a second conductive type lower electrode part 1352b disposed corresponding to each other with the first and second conductive type semiconductor layers interposed therebetween, . The first conductive type lower electrode part 1356b is electrically connected to the first conductive type upper electrode part 1356a and the second conductive type upper electrode part 1352a is electrically connected to the second conductive type lower electrode part 1352b. Respectively.

In this case, an electrode hole is formed by removing a part of the first conductive type semiconductor layer 1350, and the first conductive type lower electrode part 1356b and the first conductive type upper electrode part 1356a are formed, Can be electrically connected. The second conductive upper electrode portion 1352a and the second conductive lower electrode portion 1352b may be electrically connected to each other through a side surface of the semiconductor light emitting device.

As described above, the first and second conductive type upper electrodes are formed on the semiconductor light emitting device, the first and second conductive type lower electrodes are provided under the semiconductor light emitting device, and the upper electrode is located at a position The upper and lower sides of the semiconductor light emitting device can be assembled to the assembly substrate. That is, even if the upper portion of the semiconductor light emitting device is assembled to face the assembly substrate or the lower portion of the chip body is assembled to face the assembly substrate, connection with the electrodes of the wiring substrate becomes possible.

In the foregoing, a method of forming a display device by forming a large amount of semiconductor light emitting devices on a small-sized wafer and transferring the same to a large area substrate has been described. Such a method can be modified into various forms, for example, a method of manufacturing a display device using a transfer substrate can be considered. Modifications to the manufacturing method of the present invention and a manufacturing method using a transfer substrate as another embodiment will be described in detail below with reference to the drawings.

12A to 12E are conceptual diagrams for explaining another process for manufacturing the above-described semiconductor light emitting device.

According to the manufacturing method of the present example, the steps of manufacturing a semiconductor light emitting element (Figs. 10A, 10B, and 10C), and then sequentially placing the semiconductor light emitting elements on the assembly substrate in the fluid filled chamber It proceeds. The steps up to the step of mounting the semiconductor light emitting device on the assembly substrate can be performed in the same manner as the manufacturing method described with reference to FIGS. 10A to 10D. Therefore, in the present embodiment, the description of the mounting of the semiconductor light emitting elements in the chamber filled with the fluid to the assembly substrate is replaced with the description with reference to Figs. 10A to 10D. In the following embodiments, the horizontal semiconductor light emitting device is used as a reference, but the present invention is not limited thereto. For example, a vertical type semiconductor light emitting device or a semiconductor light emitting device having the new structure described with reference to FIGS. 11A and 11B is also applicable to the embodiments described below.

12A, the assembling substrate 2061 and the transfer substrate 2062 are separated from each other after attaching the semiconductor light emitting devices 2050 to the transfer substrate 2062.

The transfer substrate 2062 may be formed of PDMS (polydimethylsiloxane). Therefore, the transfer substrate 2062 may be referred to as a PDMS substrate. The semiconductor light emitting devices 2050 disposed on the assembly substrate 2061 are moved to the transfer substrate by the adhesive force of the PDMS material.

Next, the step of transferring the semiconductor light emitting devices 2050 from the transfer substrate 2062 to the substrate 2061 of the display device is proceeded.

As a more specific example, the transfer substrate 2062 is first attached to the temporary substrate 2063 via the conductive adhesive layer 2030 and the transfer substrate 2062 is removed from the temporary substrate 2063 ).

The conductive adhesive layer 2030 may be, for example, an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. As another example, a film containing a substance that chemically changes to a conductive material by heat or the like is also possible.

In this example, the conductive adhesive layer 2030 may be implemented by an anisotropic conductive film, and an anisotropic conductive film may be applied to the substrate on which the insulating layer 2060 is disposed.

In this case, the conductive adhesive layer 2030 may be detached from the transfer substrate 2062 and attached to the temporary substrate 2063 when the transfer substrate 2062 is removed from the temporary substrate 2063. For this, the temporary substrate 2063 may be bonded to the conductive adhesive layer 2030 with a stronger force than the transfer substrate 2062. The surface of the transfer substrate 2062 may be in contact with the conductive adhesive layer 2030 only to the extent that the semiconductor light emitting device 2050 is in contact with the conductive adhesive layer 2030, And may be in contact with the adhesive layer 2030.

In addition, the conductive adhesive layer 2030 is made stronger in adhesive force than the transfer substrate 2062. Therefore, the semiconductor light emitting devices 2050 attached to the transfer substrate 2062 move to the conductive adhesive layer 2030 and are attached (FIG. 12C).

Next, after the wiring substrate 2010 on which the wiring electrodes are formed is adhered to the temporary substrate 2063, the temporary substrate 2063 is removed from the wiring substrate 2010 (Figs. 12D and 12E ).

In this step, the temporary substrate 2063 is attached to the wiring substrate via the conductive adhesive layer so that the semiconductor light emitting elements are aligned with the wiring electrode (FIG. 12D). The first electrode 2020, the auxiliary electrode 2070, and the second electrode 2040 may be disposed on the wiring substrate 2010. In this case, the first electrode 2020 and the second electrode 2040 may be arranged in directions orthogonal to each other. Further, in order to implement a flexible display device, the wiring board may include glass or polyimide (PI).

After the wiring substrate 2010 on which the wiring electrodes are formed is adhered to the temporary substrate 2063, heat or catalyst may be applied to the conductive adhesive layer 2030 (FIG. 12D).

For example, the wiring board 2010 and the conductive adhesive layer 20300 can be thermo-compression-bonded. For example, the wiring board 2010 and the conductive adhesive layer 2030 can be thermally compressed by applying an ACF press head The wiring substrate 2010 and the conductive adhesive layer 2030 are bonded to each other by thermocompression bonding the semiconductor light emitting device 2050 and the auxiliary electrode 2070 by the characteristics of the anisotropic conductive film having conductivity by thermocompression bonding, The semiconductor light emitting device 2050 may be electrically connected to the electrode 2050 through the second electrode 2040. The semiconductor light emitting device 2050 may be electrically connected to the anisotropic conductive film 2050. [ And a barrier rib may be formed between the semiconductor light emitting devices 2050.

The separation of the temporary substrate 2063 can be separated from the conductive adhesive layer by applying a physical force to the temporary substrate 2063 (FIG. 12E). As another example, the temporary substrate may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO).

In addition, the manufacturing method of the present exemplary embodiment may further include forming a phosphor layer on one surface of the semiconductor light emitting device 2050. The phosphor covers the semiconductor light emitting devices. For example, the semiconductor light emitting device 1050 is a blue semiconductor light emitting device that emits blue (B) light, and a red phosphor or a green phosphor for converting the blue (B) A layer can be formed on one surface of the device.

According to the above-described manufacturing method, a large-area display device in which semiconductor light emitting elements form individual pixels can be realized, which can be modified into another form. 13A to 13D are conceptual diagrams for explaining another process for manufacturing the above-described semiconductor light emitting device.

10A, 10B and 10C), and subsequently, the steps in which the semiconductor light emitting elements are seated on the assembly substrate in the fluid-filled chamber (FIG. 10D) are sequentially performed It proceeds. The steps up to the step of mounting the semiconductor light emitting device on the assembly substrate can be performed in the same manner as the manufacturing method described with reference to FIGS. 10A to 10D. Therefore, in the present embodiment, the description of the mounting of the semiconductor light emitting elements in the chamber filled with the fluid to the assembly substrate is replaced with the description with reference to Figs. 10A to 10D. In the following embodiments, the horizontal semiconductor light emitting device is used as a reference, but the present invention is not limited thereto. For example, a vertical type semiconductor light emitting device or a semiconductor light emitting device having the new structure described with reference to FIGS. 11A and 11B is also applicable to the embodiments described below.

13A, the assembling substrate 3061 and the transfer substrate 3062 are separated from each other after attaching the semiconductor light emitting devices 3050 to the transfer substrate 3062. As shown in FIG.

The transfer substrate 3062 may be formed of PDMS (polydimethylsiloxane). Thus, the transfer substrate 3062 may be referred to as a PDMS substrate. The semiconductor light emitting elements 3050 disposed on the assembly substrate 3061 are moved to the transfer substrate 3062 by the adhesive force of the PDMS material.

Next, a step of transferring the semiconductor light emitting devices from the transfer substrate 3062 to the base substrate 3070 of the display device is performed.

13B). In the case where the semiconductor light emitting device is attached to the adhesive layer, the base substrate 3070 is bonded to the base substrate 3070 by using the adhesive layer 3080, The transfer substrate 3070 is separated from the transfer substrate 3070 (Fig. 13C).

In order to implement a flexible display device, the base substrate 3070 may include glass or polyimide (PI).

The adhesive layer 3080 may be a non-conductive adhesive layer. In this case, the adhesive layer 3080 is separated from the transfer substrate 3062 (FIG. 13D) when the transfer substrate 3062 is removed from the base substrate 3070, and can be attached to the base substrate 3070 have. For this, the base substrate 3070 may be bonded to the adhesive layer with a stronger force than the transfer substrate 3062. Further, the adhesive layer 3080 is made stronger in adhesive force than the transfer substrate 3062. Accordingly, the semiconductor light emitting devices attached to the transfer substrate 3062 are moved to the adhesive layer 3080 and attached. However, the present invention is not limited thereto. The base substrate 3070 may be a wiring board having wiring electrodes formed thereon, and the adhesive layer may be a conductive adhesive layer such as an anisotropic conductive film.

Next, a step of forming a wiring electrode 3090 electrically connected to the semiconductor light emitting elements 3050 is performed (FIG. 13D).

The first and second electrodes electrically connected to the first conductive type electrode and the second conductive type electrode of the semiconductor light emitting element are formed in the base substrate 3070 in a state where the semiconductor light emitting element is aligned at the position of the individual pixel . The first and second electrodes may be formed by evaporation or the like as a wiring electrode 3090 formed in a direction crossing each other.

According to this example, since the wiring process is performed after the semiconductor light emitting device is bonded to the base substrate without using a separate wiring substrate, a simpler manufacturing process can be realized.

The method of manufacturing a display device using the semiconductor light emitting device described above is not limited to the configuration and the method of the embodiments described above, but the embodiments may be modified such that all or some of the embodiments are selectively combined .

Claims (14)

The semiconductor light emitting devices grown on the growth substrate are separated from the growth substrate, and the semiconductor light emitting devices are seated on the assembly substrate in a fluid-filled chamber;
Disposing a conductive adhesive layer on a wiring board on which wiring electrodes are formed;
Attaching the assembly substrate to the conductive adhesive layer such that the semiconductor light emitting elements are aligned with the wiring electrode;
Removing the assembly substrate from the wiring board; And
And applying heat or catalyst while applying pressure to the conductive adhesive layer such that the semiconductor light emitting elements are electrically connected to the wiring electrode. The method according to claim 1,
Wherein the assembly substrate is formed with grooves on which the semiconductor light emitting devices are mounted at positions where the semiconductor light emitting devices are aligned with the wiring electrodes. 3. The method of claim 2,
Wherein the step of adhering to the conductive adhesive layer is performed after the semiconductor light emitting elements are all filled with the grooves. The method according to claim 1,
Wherein the step of applying heat or catalyst is performed after removing the assembly substrate from the wiring board. The method according to claim 1,
And forming a phosphor layer to cover the semiconductor light emitting elements. The method according to claim 1,
The semiconductor light emitting devices each include a first conductive type electrode and a second conductive type electrode electrically connected to the wiring electrode,
Wherein at least one of the first conductive type electrode and the second conductive type electrode is formed on each of opposite surfaces of the semiconductor light emitting devices. The semiconductor light emitting devices grown on the growth substrate are separated from the growth substrate, and the semiconductor light emitting devices are seated on the assembly substrate in a fluid-filled chamber;
Separating the assembly substrate and the transfer substrate from each other after attaching the semiconductor light emitting devices to the transfer substrate; And
And transferring the semiconductor light emitting elements from the transfer substrate to a substrate of the display device. 8. The method of claim 7,
Wherein the transferring step comprises:
Attaching the transfer substrate to a temporary substrate via a conductive adhesive layer, and removing the transfer substrate from the temporary substrate; And
And removing the temporary substrate from the wiring substrate after the wiring substrate on which the wiring electrode is formed is attached to the temporary substrate. 9. The method of claim 8,
Wherein the conductive adhesive layer is detached from the transfer substrate when the transfer substrate is removed from the temporary substrate, and is attached to the temporary substrate. 9. The method of claim 8,
Wherein the conductive adhesive layer is thermally or catalytically applied to the temporary substrate after the wiring substrate having the wiring electrode formed thereon is attached to the temporary substrate. Claim 11 has been abandoned due to the set registration fee. 8. The method of claim 7,
Wherein the transferring step comprises:
Attaching the transfer substrate to a base substrate using an adhesive layer and separating the transfer substrate from the base substrate in a state where the semiconductor light emitting device is attached to the adhesive layer; And
And forming a wiring electrode electrically connected to the semiconductor light emitting elements. Claim 12 is abandoned in setting registration fee. 12. The method of claim 11,
Wherein the adhesive layer is separated from the transfer substrate when the transfer substrate is separated from the base substrate, and is attached to the base substrate. Claim 13 has been abandoned due to the set registration fee. 8. The method of claim 7,
Wherein the transfer substrate is made of PDMS (polydimethylsiloxane). Claim 14 has been abandoned due to the setting registration fee. 8. The method of claim 7,
The semiconductor light emitting devices each include a first conductive type electrode and a second conductive type electrode electrically connected to the wiring electrode,
Wherein at least one of the first conductive type electrode and the second conductive type electrode is formed on each of opposite surfaces of the semiconductor light emitting devices.

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