KR102429362B1 - Method for manufacturing display device using semiconductor light emitting device - Google Patents

Abstract

The present invention relates to a display device and a method for manufacturing the same, and more particularly, to a display device using a semiconductor light emitting device. The present invention relates to the steps of growing a plurality of semiconductor light emitting devices on a growth substrate, transferring some of the semiconductor light emitting devices to a transfer substrate, and a region corresponding to the partial semiconductor light emitting devices among the entire area of the wiring board. aligning the transfer substrate and the wiring substrate so that the some semiconductor light emitting devices are disposed on the comprising the step of, wherein the wiring board is made of a light-transmitting material, and the step of aligning the transfer substrate and the wiring board is performed using an image captured by a first camera disposed under the wiring board. It provides a method of manufacturing a display device, characterized in that. According to the present invention, since a plurality of semiconductor light emitting devices can be transferred from the transfer substrate to the wiring board through a single transfer process, there is no need to individually transfer each of the semiconductor light emitting devices to the wiring board. Accordingly, the manufacturing time of the display device may be shortened.

Description

Method of manufacturing a display device using a semiconductor light emitting device TECHNICAL FIELD

The present invention relates to a method of manufacturing a display device, and more particularly, to a method of manufacturing a display device using a semiconductor light emitting device.

Recently, in the field of display technology, a display device having excellent characteristics such as a thin film type and a flexible type has been developed. On the other hand, currently commercialized main displays are represented by LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes). However, in the case of LCD, there are problems in that the response time is not fast and it is difficult to implement flexible, and in the case of AMOLED, there are weaknesses in that the lifespan is short and the mass production yield is not good.

Meanwhile, a light emitting diode (Light Emitting Diode: LED) is a well-known semiconductor light emitting device that converts electric current into light. It has been used as a light source for display images of electronic devices including communication devices. Accordingly, a method for solving the above problems by implementing a display using the semiconductor light emitting device can be proposed.

Meanwhile, in recent years, the size of the semiconductor light emitting device has been reduced to several tens of micrometers. When a display device is implemented using semiconductor light emitting devices having a size of several tens of micrometers, a very large number of semiconductor light emitting devices must be transferred to a wiring board of the display device.

When semiconductor light emitting devices having a size of several tens of micrometers are transferred to a wiring board in a device unit, the manufacturing time of the display device is lengthened and productivity is deteriorated. In addition, since the size of the semiconductor light emitting device is very small, there is a problem in that it is difficult to handle the semiconductor light emitting device as an element unit.

An object of the present invention is to provide a method of manufacturing a display device that reduces the time required to transfer semiconductor light emitting devices to a wiring board.

Specifically, an object of the present invention is to provide a method of manufacturing a display device capable of transferring a plurality of semiconductor light emitting devices through a single transfer process.

In order to achieve the above object, the present invention transfers a plurality of semiconductor light emitting devices transferred to a transfer substrate to a wiring substrate through a single transfer process.

In a specific embodiment, the present invention includes the steps of growing a plurality of semiconductor light emitting devices on a growth substrate, transferring some of the semiconductor light emitting devices to a transfer substrate, and among the entire area of a wiring board, the partial semiconductor aligning the transfer substrate and the wiring board so that the partial semiconductor light emitting devices are disposed in the region corresponding to the light emitting device, after fixing the some semiconductor light emitting devices to the region corresponding to the partial semiconductor light emitting device, and removing the transfer substrate, wherein the wiring substrate is made of a light-transmitting material, and the step of aligning the transfer substrate and the wiring substrate is taken through a first camera disposed under the wiring substrate. It provides a method of manufacturing a display device, characterized in that it is performed using the image.

In an embodiment, in the step of aligning the transfer substrate and the wiring substrate, the target region of the wiring substrate and the target region of the transfer substrate overlap the region corresponding to the partial semiconductor light emitting device. Some semiconductor light emitting devices may be disposed.

In an embodiment, in the step of aligning the transfer board and the wiring board, the target area of the wiring board and the target area of the transfer board are overlapped by using the image captured by the first camera. can do it

In an embodiment, before alignment of the transfer substrate and the wiring substrate, the method may further include forming irregularities in target regions of the transfer substrate and the wiring substrate, respectively.

In an embodiment, in the step of aligning the transfer substrate and the wiring substrate, the irregularities formed on each of the transfer substrate and the wiring substrate, included in the image captured by the first camera, overlap each other. can

In an embodiment, in the step of aligning the transfer substrate and the wiring substrate, the positions of the some semiconductor light emitting devices and the some semiconductor light emitting devices recognized in the image captured by the first camera This may be performed using the location of the corresponding region.

In an embodiment, before aligning the transfer substrate and the wiring substrate, photographing the transfer substrate through the first camera and the wiring substrate through a second camera disposed above the wiring substrate The method may further include taking a picture, and the step of aligning the transfer substrate and the wiring board may be performed using the images captured by the first and second cameras.

In an embodiment, in the step of aligning the transfer substrate and the wiring substrate, the positions of the some semiconductor light emitting devices recognized in the image photographed by the first camera and the positions of the semiconductor light emitting devices recognized by the second camera This may be performed using positions of regions corresponding to some of the semiconductor light emitting devices recognized in the image.

According to the present invention, since a plurality of semiconductor light emitting devices can be transferred from the transfer substrate to the wiring board through a single transfer process, there is no need to individually transfer each of the semiconductor light emitting devices to the wiring board. Accordingly, the manufacturing time of the display device may be shortened.

1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device of the present invention.
FIG. 2 is a partially enlarged view of part A of FIG. 1 .
3A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2 .
4 is a conceptual diagram illustrating the flip-chip type semiconductor light emitting device of FIG. 3A .
5A to 5C are conceptual views illustrating various forms of implementing colors in relation to a flip-chip type semiconductor light emitting device.
6 is a cross-sectional view illustrating a method of manufacturing a display device using a semiconductor light emitting device of the present invention.
7 is a perspective view illustrating another embodiment of a display device using the semiconductor light emitting device of the present invention.
FIG. 8 is a cross-sectional view taken along line DD of FIG. 7 .
9 is a conceptual diagram illustrating the vertical semiconductor light emitting device of FIG. 8 .
10A to 10D are conceptual views illustrating a method of manufacturing a display device using a semiconductor light emitting device according to the present invention.
11 is a conceptual diagram illustrating an apparatus for aligning a transfer substrate and a wiring substrate.
12 is a conceptual diagram illustrating a method for improving the accuracy of horizontal and vertical movement of a transfer substrate.
13 and 14 are conceptual views illustrating a method of fixing semiconductor light emitting devices to a wiring board.
15A to 15C are conceptual views illustrating a process of transferring each of green, blue, and red semiconductor light emitting devices to a wiring board.
16 is a conceptual diagram illustrating a wiring board to which green, blue, and red semiconductor light emitting devices are transferred.

Hereinafter, the embodiments disclosed in the present specification will be described in detail with reference to the accompanying drawings, but the same or similar components are assigned the same reference numerals regardless of reference numerals, and redundant description thereof will be omitted. The suffixes "module" and "part" for components used in the following description are given or mixed in consideration of only the ease of writing the specification, and do not have distinct meanings or roles by themselves. In addition, in describing the embodiments disclosed in the present specification, if it is determined that detailed descriptions of related known technologies may obscure the gist of the embodiments disclosed in this specification, the detailed description thereof will be omitted. In addition, it should be noted that the accompanying drawings are only for easy understanding of the embodiments disclosed in the present specification, and should not be construed as limiting the technical spirit disclosed in the present specification by the accompanying drawings.

It is also understood that when an element, such as a layer, region, or substrate, is referred to as being “on” another component, it may be directly on the other element or intervening elements in between. There will be.

The display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation system, and a slate PC. , Tablet PC, Ultra Book, digital TV, desktop computer, and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiment described herein may be applied to a display capable device even in a new product form to be developed later.

1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device of the present invention.

As illustrated, information processed by the control unit of the display apparatus 100 may be displayed using a flexible display.

The flexible display includes a display that can be bent, bent, twisted, folded, or rolled by an external force. For example, the flexible display may be a display manufactured on a thin and flexible substrate that can be bent, bent, folded, or rolled like paper while maintaining the display characteristics of a conventional flat panel display.

In a state in which the flexible display is not bent (eg, a state having an infinite radius of curvature, hereinafter referred to as a first state), the display area of the flexible display becomes a flat surface. In a state bent by an external force in the first state (for example, a state having a finite radius of curvature, hereinafter referred to as a second state), the display area may be a curved surface. As illustrated, the information displayed in the second state may be visual information output on the curved surface. Such visual information is implemented by independently controlling the light emission of sub-pixels arranged in a matrix form. The unit pixel means a minimum unit for realizing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as a type of a semiconductor light emitting device that converts current into light. The light emitting diode is formed in a small size, so that it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in more detail with reference to the drawings.

2 is a partially enlarged view of part A of FIG. 1, FIGS. 3A and 3B are cross-sectional views taken along lines B-B and C-C of FIG. 2, and FIG. 4 is a conceptual diagram showing the flip-chip type semiconductor light emitting device of FIG. 3A, 5A to 5C are conceptual views illustrating various forms of implementing colors in relation to a flip-chip type semiconductor light emitting device.

Referring to FIGS. 2, 3A and 3B , the display device 100 using a passive matrix (PM) type semiconductor light emitting device is exemplified as the display device 100 using a semiconductor light emitting device. However, the examples described below are also applicable to an active matrix (AM) type semiconductor light emitting device.

The display device 100 includes a substrate 110 , a first electrode 120 , a conductive adhesive layer 130 , a second electrode 140 , and a plurality of semiconductor light emitting devices 150 .

The substrate 110 may be a flexible substrate. For example, in order to implement a flexible display device, the substrate 110 may include glass or polyimide (PI). In addition, any material such as polyethylene naphthalate (PEN) or polyethylene terephthalate (PET) may be used as long as it has insulating properties and is flexible. In addition, the substrate 110 may be made of either a transparent material or an opaque material.

The substrate 110 may be a wiring substrate on which the first electrode 120 is disposed, and thus the first electrode 120 may be located on the substrate 110 .

As shown, the insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is positioned, and the auxiliary electrode 170 may be positioned on the insulating layer 160 . In this case, a state in which the insulating layer 160 is laminated on the substrate 110 may be a single wiring board. More specifically, the insulating layer 160 is made of an insulating and flexible material such as polyimide (PI, Polyimide), PET, or PEN, and may be integrally formed with the substrate 110 to form a single substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150 , is located on the insulating layer 160 , and is disposed to correspond to the position of the first electrode 120 . For example, the auxiliary electrode 170 may have a dot shape and may be electrically connected to the first electrode 120 by an electrode hole 171 penetrating the insulating layer 160 . The electrode hole 171 may be formed by filling the via hole with a conductive material.

Referring to the drawings, the conductive adhesive layer 130 is formed on one surface of the insulating layer 160 , but the present invention is not necessarily limited thereto. For example, a layer performing a specific function is formed between the insulating layer 160 and the conductive adhesive layer 130 , or the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160 . is also possible In a structure in which the conductive adhesive layer 130 is disposed on the substrate 110 , the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity, and for this purpose, a material having conductivity and a material having adhesiveness may be mixed in the conductive adhesive layer 130 . In addition, the conductive adhesive layer 130 has ductility, thereby enabling a flexible function in the display device.

For this example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 may be configured as a layer that allows electrical interconnection in the Z direction passing through the thickness, but has electrical insulation in the horizontal X-Y direction. Accordingly, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (hereinafter, referred to as a 'conductive adhesive layer').

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member, and when heat and pressure are applied, only a specific portion has conductivity by the anisotropic conductive medium. Hereinafter, it will be described that heat and pressure are applied to the anisotropic conductive film, but other methods are also possible in order for the anisotropic conductive film to have partial conductivity. In this method, for example, only one of the heat and pressure may be applied or UV curing may be performed.

In addition, the anisotropic conductive medium may be, for example, conductive balls or conductive particles. As shown, in this example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member, and when heat and pressure are applied, only a specific portion has conductivity by the conductive balls. The anisotropic conductive film may be in a state in which the core of the conductive material contains a plurality of particles covered by an insulating film made of a polymer material. . At this time, the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film. As a more specific example, heat and pressure are applied as a whole to the anisotropic conductive film, and electrical connection in the Z-axis direction is partially formed due to a height difference of an object adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state in which an insulating core contains a plurality of particles coated with a conductive material. In this case, the conductive material is deformed (pressed) in the portion to which heat and pressure are applied, so that it has conductivity in the thickness direction of the film. As another example, a form in which the conductive material penetrates the insulating base member in the Z-axis direction to have conductivity in the thickness direction of the film is also possible. In this case, the conductive material may have a pointed end.

As shown, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of the insulating base member. More specifically, the insulating base member is formed of a material having an adhesive property, and the conductive balls are intensively disposed on the bottom of the insulating base member, and when heat and pressure are applied from the base member, it is deformed together with the conductive balls. It has conductivity in the vertical direction.

However, the present invention is not necessarily limited thereto, and the anisotropic conductive film has a form in which conductive balls are randomly mixed in an insulating base member, or is composed of a plurality of layers and conductive balls are arranged on one layer (double- ACF), etc. are all possible.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which a conductive ball is mixed with an insulating and adhesive base material. Also, a solution containing conductive particles may be a solution containing conductive particles or nano particles.

Referring back to the drawing, the second electrode 140 is spaced apart from the auxiliary electrode 170 and is positioned on the insulating layer 160 . That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 in which the auxiliary electrode 170 and the second electrode 140 are located.

After the conductive adhesive layer 130 is formed in a state in which the auxiliary electrode 170 and the second electrode 140 are positioned on the insulating layer 160 , the semiconductor light emitting device 150 is connected in a flip-chip form by applying heat and pressure. In this case, the semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140 .

Referring to FIG. 4 , the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type electrode 156 , a p-type semiconductor layer 155 on which the p-type electrode 156 is formed, an active layer 154 formed on the p-type semiconductor layer 155 , an active layer ( It includes an n-type semiconductor layer 153 formed on the 154 , and an n-type electrode 152 spaced apart from the p-type electrode 156 in the horizontal direction on the n-type semiconductor layer 153 . In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 and the conductive adhesive layer 130 , and the n-type electrode 152 may be electrically connected to the second electrode 140 .

Referring back to FIGS. 2 , 3A and 3B , the auxiliary electrode 170 is formed to be elongated in one direction, so that one auxiliary electrode can be electrically connected to the plurality of semiconductor light emitting devices 150 . For example, p-type electrodes of left and right semiconductor light emitting devices with respect to the auxiliary electrode may be electrically connected to one auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is press-fitted into the conductive adhesive layer 130 by heat and pressure, and through this, between the p-type electrode 156 and the auxiliary electrode 170 of the semiconductor light emitting device 150 . Only a portion and a portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 have conductivity, and there is no press-fitting of the semiconductor light emitting device in the remaining portion, so that the semiconductor light emitting device does not have conductivity. As described above, the conductive adhesive layer 130 not only interconnects the semiconductor light emitting device 150 and the auxiliary electrode 170 and between the semiconductor light emitting device 150 and the second electrode 140 , but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitute a light emitting device array, and the phosphor layer 180 is formed on the light emitting device array.

The light emitting device array may include a plurality of semiconductor light emitting devices having different luminance values. Each semiconductor light emitting device 150 constitutes a unit pixel and is electrically connected to the first electrode 120 . For example, there may be a plurality of first electrodes 120 , the semiconductor light emitting devices may be arranged in, for example, several columns, and the semiconductor light emitting devices in each column may be electrically connected to any one of the plurality of first electrodes.

In addition, since the semiconductor light emitting devices are connected in a flip-chip form, semiconductor light emitting devices grown on a transparent dielectric substrate can be used. In addition, the semiconductor light emitting devices may be, for example, nitride semiconductor light emitting devices. Since the semiconductor light emitting device 150 has excellent luminance, individual unit pixels can be configured even with a small size.

As illustrated, a barrier rib 190 may be formed between the semiconductor light emitting devices 150 . In this case, the partition wall 190 may serve to separate individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130 . For example, by inserting the semiconductor light emitting device 150 into the anisotropic conductive film, the base member of the anisotropic conductive film may form the partition wall.

In addition, when the base member of the anisotropic conductive film is black, the barrier rib 190 may have reflective properties and increase contrast even without a separate black insulator.

As another example, a reflective barrier rib may be separately provided as the barrier rib 190 . In this case, the barrier rib 190 may include a black or white insulator depending on the purpose of the display device. When the barrier ribs made of a white insulator are used, reflectivity may be increased, and when the barrier ribs made of a black insulator are used, it is possible to have reflective properties and increase contrast.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150 . For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 180 performs a function of converting the blue (B) light into a color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting an individual pixel.

That is, a red phosphor 181 capable of converting blue light into red (R) light may be stacked on the blue semiconductor light emitting device 151 at a position forming a unit pixel of red color, and a position constituting a unit pixel of green color In , a green phosphor 182 capable of converting blue light into green (G) light may be stacked on the blue semiconductor light emitting device 151 . In addition, only the blue semiconductor light emitting device 151 may be used alone in the portion constituting the blue unit pixel. In this case, unit pixels of red (R), green (G), and blue (B) may form one pixel. More specifically, a phosphor of one color may be stacked along each line of the first electrode 120 . Accordingly, one line in the first electrode 120 may be an electrode for controlling one color. That is, red (R), green (G), and blue (B) may be sequentially disposed along the second electrode 140 , thereby realizing a unit pixel.

However, the present invention is not necessarily limited thereto, and instead of the phosphor, the semiconductor light emitting device 150 and the quantum dot (QD) are combined to implement unit pixels of red (R), green (G), and blue (B). have.

In addition, a black matrix 191 may be disposed between each of the phosphor layers to improve contrast. That is, the black matrix 191 may improve contrast of light and dark.

However, the present invention is not necessarily limited thereto, and other structures for implementing blue, red, and green colors may be applied.

Referring to FIG. 5A , each semiconductor light emitting device 150 mainly uses gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together to emit a variety of light including blue light. It can be implemented as a device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a sub-pixel, respectively. For example, red, green, and blue semiconductor light emitting devices R, G, and B are alternately disposed, and unit pixels of red, green, and blue are formed by the red, green and blue semiconductor light emitting devices. The pixels form one pixel, through which a full-color display can be realized.

Referring to FIG. 5B , the semiconductor light emitting device may include a white light emitting device W in which a yellow phosphor layer is provided for each device. In this case, a red phosphor layer 181 , a green phosphor layer 182 , and a blue phosphor layer 183 may be provided on the white light emitting device W to form a unit pixel. In addition, a unit pixel may be formed on the white light emitting device W by using a color filter in which red, green, and blue are repeated.

Referring to FIG. 5C , a structure in which a red phosphor layer 181 , a green phosphor layer 182 , and a blue phosphor layer 183 are provided on the ultraviolet light emitting device UV is also possible. In this way, the semiconductor light emitting device can be used in the entire range of visible light as well as ultraviolet (UV) light, and can be extended to the form of a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of the upper phosphor. .

Referring back to this example, the semiconductor light emitting device 150 is positioned on the conductive adhesive layer 130 to constitute a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent luminance, individual unit pixels can be configured even with a small size. The size of the individual semiconductor light emitting device 150 may have a side length of 80 μm or less, and may be a rectangular or square device. In the case of a rectangular shape, the size may be 20X80㎛ or less.

In addition, even when a square semiconductor light emitting device 150 having a side length of 10 μm is used as a unit pixel, sufficient brightness to form a display device appears. Accordingly, for example, when the unit pixel is a rectangular pixel having one side of 600 μm and the other side of 300 μm, the distance between the semiconductor light emitting devices is relatively large. Accordingly, in this case, it is possible to implement a flexible display device having HD image quality.

The display device using the semiconductor light emitting device described above can be manufactured by a new type of manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG. 6 .

6 is a cross-sectional view illustrating a method of manufacturing a display device using a semiconductor light emitting device of the present invention.

Referring to this figure, first, a conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are positioned. An insulating layer 160 is laminated on the first substrate 110 to form one substrate (or wiring board), and the wiring substrate includes a first electrode 120 , an auxiliary electrode 170 , and a second electrode 140 . this is placed In this case, the first electrode 120 and the second electrode 140 may be disposed in a mutually orthogonal direction. In addition, in order to implement a flexible display device, the first substrate 110 and the insulating layer 160 may each include glass or polyimide (PI).

The conductive adhesive layer 130 may be implemented by, for example, an anisotropic conductive film, and for this purpose, the anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is positioned.

Next, the second substrate 112 corresponding to the positions of the auxiliary electrode 170 and the second electrodes 140 and on which the plurality of semiconductor light emitting devices 150 constituting individual pixels are located is formed with the semiconductor light emitting device 150 . ) is disposed to face the auxiliary electrode 170 and the second electrode 140 .

In this case, the second substrate 112 is a growth substrate on which the semiconductor light emitting device 150 is grown, and may be a sapphire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in a wafer unit, the semiconductor light emitting device can be effectively used in a display device by having an interval and a size that can form a display device.

Then, the wiring board and the second board 112 are thermocompression-bonded. For example, the wiring substrate and the second substrate 112 may be thermocompression-bonded by applying an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermocompression bonding. Due to the properties of the anisotropic conductive film having conductivity by thermocompression bonding, only a portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity, and through this, the electrodes and the semiconductor light emission. The device 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, through which a barrier rib may be formed between the semiconductor light emitting devices 150 .

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off (LLO) method or a chemical lift-off (CLO) method.

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating silicon oxide (SiOx) or the like on the wiring board to which the semiconductor light emitting device 150 is coupled.

In addition, the method may further include forming a phosphor layer on one surface of the semiconductor light emitting device 150 . For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red or green phosphor for converting the blue (B) light into the color of a unit pixel is the blue semiconductor light emitting device. A layer may be formed on one surface of the device.

The manufacturing method or structure of the display device using the semiconductor light emitting device described above may be modified in various forms. As an example, a vertical semiconductor light emitting device may also be applied to the display device described above. Hereinafter, a vertical structure will be described with reference to FIGS. 5 and 6 .

In addition, in the modification or embodiment described below, the same or similar reference numerals are assigned to the same or similar components as those of the preceding example, and the description is replaced with the first description.

7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, FIG. 8 is a cross-sectional view taken along line D-D of FIG. 7 , and FIG. 9 is a conceptual view showing the vertical semiconductor light emitting device of FIG. 8 to be.

Referring to the drawings, the display device may be a display device using a passive matrix (PM) type vertical semiconductor light emitting device.

The display device includes a substrate 210 , a first electrode 220 , a conductive adhesive layer 230 , a second electrode 240 , and a plurality of semiconductor light emitting devices 250 .

The substrate 210 is a wiring substrate on which the first electrode 220 is disposed, and may include polyimide (PI) to implement a flexible display device. In addition, any material that has insulating properties and is flexible may be used.

The first electrode 220 is positioned on the substrate 210 and may be formed as a bar-shaped electrode long in one direction. The first electrode 220 may serve as a data electrode.

The conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is positioned. Like a display device to which a flip chip type light emitting device is applied, the conductive adhesive layer 230 may include an anisotropic conductive film (ACF), an anisotropic conductive paste, and a solution containing conductive particles. ), and so on. However, in this embodiment as well, a case in which the conductive adhesive layer 230 is implemented by an anisotropic conductive film is exemplified.

After the anisotropic conductive film is positioned on the substrate 210 in a state where the first electrode 220 is positioned, when the semiconductor light emitting device 250 is connected by applying heat and pressure, the semiconductor light emitting device 250 becomes the first It is electrically connected to the electrode 220 . In this case, the semiconductor light emitting device 250 is preferably disposed on the first electrode 220 .

The electrical connection is created because, as described above, the anisotropic conductive film partially has conductivity in the thickness direction when heat and pressure are applied thereto. Accordingly, the anisotropic conductive film is divided into a conductive portion 231 and a non-conductive portion 232 in the thickness direction.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 implements not only electrical connection but also mechanical bonding between the semiconductor light emitting device 250 and the first electrode 220 .

As described above, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230 and constitutes individual pixels in the display device through this. Since the semiconductor light emitting device 250 has excellent luminance, individual unit pixels can be configured even with a small size. The size of such an individual semiconductor light emitting device 250 may have a side length of 80 μm or less, and may be a rectangular or square device. In the case of a rectangular shape, the size may be 20X80㎛ or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 disposed in a direction crossing the longitudinal direction of the first electrode 220 and electrically connected to the vertical semiconductor light emitting device 250 are positioned between the vertical semiconductor light emitting devices.

Referring to FIG. 9 , the vertical semiconductor light emitting device includes a p-type electrode 256 , a p-type semiconductor layer 255 formed on the p-type electrode 256 , and an active layer 254 formed on the p-type semiconductor layer 255 . ), an n-type semiconductor layer 253 formed on the active layer 254 , and an n-type electrode 252 formed on the n-type semiconductor layer 253 . In this case, the lower p-type electrode 256 may be electrically connected to the first electrode 220 and the conductive adhesive layer 230 , and the upper n-type electrode 252 may be a second electrode 240 to be described later. ) can be electrically connected to. The vertical semiconductor light emitting device 250 has a great advantage in that it can reduce the chip size because electrodes can be arranged up and down.

Referring back to FIG. 8 , a phosphor layer 280 may be formed on one surface of the semiconductor light emitting device 250 . For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and a phosphor layer 280 for converting the blue (B) light into the color of a unit pixel is provided. can be In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue light into red (R) light may be stacked on the blue semiconductor light emitting device 251 at a position constituting a unit pixel of red color, and a position constituting a unit pixel of green color In , a green phosphor 282 capable of converting blue light into green (G) light may be stacked on the blue semiconductor light emitting device 251 . In addition, only the blue semiconductor light emitting device 251 may be used alone in the portion constituting the blue unit pixel. In this case, unit pixels of red (R), green (G), and blue (B) may form one pixel.

However, the present invention is not necessarily limited thereto, and as described above in a display device to which a flip chip type light emitting device is applied, other structures for implementing blue, red, and green colors may be applied.

When a display device is implemented using the above-described semiconductor light emitting devices having a size of several tens of micrometers, a very large number of semiconductor light emitting devices must be transferred to a wiring board of the display device.

When a semiconductor light emitting device grown on a growth substrate is transferred to a wiring substrate in device units using either a die bonder or a chip mounter, the manufacturing time of the display device is increased. In addition, since the size of the semiconductor light emitting device is very small, it is somewhat difficult to apply any one of a die bonder and a chip mounter.

The present invention provides a method for efficiently transferring semiconductor light emitting devices having a size of several tens of micrometers to a wiring board quickly and accurately. Hereinafter, a manufacturing method according to the present invention will be described with reference to the drawings.

10A to 10D are conceptual views illustrating a method of manufacturing a display device using a semiconductor light emitting device according to the present invention.

First, referring to FIG. 10A , a step of growing semiconductor light emitting devices on a growth substrate is performed. Hereinafter, an embodiment of growing a flip chip type light emitting device will be described as an example, but the manufacturing method according to the present invention is not limited to the flip chip type.

Referring to FIG. 10A (a), an n-type semiconductor layer 153, an active layer 154, and a p-type semiconductor layer 155 are grown on a growth substrate 310, respectively.

After the n-type semiconductor layer 153 is grown, an active layer 154 is grown on the n-type semiconductor layer 153 , and then a p-type semiconductor layer 155 is grown on the active layer 154 . make it In this way, when the n-type semiconductor layer 153, the active layer 154, and the p-type semiconductor layer 155 are sequentially grown, a stacked structure of a micro semiconductor light emitting device is formed as shown in (a) of FIG. do.

The growth substrate 310 (wafer) may be formed of a material having light transmittance, for example, any one of sapphire (Al2O3), GaN, ZnO, and AlO.

In addition, the growth substrate 310 may be formed of a material suitable for semiconductor material growth, a carrier wafer. It may be formed of a material having excellent thermal conductivity, and, including a conductive substrate or an insulating substrate, for example, a SiC substrate having higher thermal conductivity than a sapphire (Al2O3) substrate or at least one of Si, GaAs, GaP, InP, Ga2O3 Can be used.

Next, at least a portion of the active layer 154 and the p-type semiconductor layer 155 are removed to expose at least a portion of the n-type semiconductor layer 153 (FIG. 10A (b)).

In this case, the active layer 154 and the p-type semiconductor layer 155 are partially removed in the vertical direction to expose the n-type semiconductor layer 153 to the outside. Through this, the mesa process is performed. Thereafter, isolation is performed by etching the n-type semiconductor layer 153 so that a plurality of light emitting devices form a light emitting device array. As described above, the p-type semiconductor layer 155, the active layer 154, and the n-type semiconductor layer 153 are etched to form a plurality of micro semiconductor light emitting devices.

Next, an n-type electrode 152 having a height difference in the thickness direction between the n-type semiconductor layer 153 and the p-type semiconductor layer 155 to implement a flip chip type light emitting device, and Each p-type electrode 156 is formed (FIG. 10A(c)).

The n-type electrode 152 and the p-type electrode 156 may be formed by a deposition method such as sputtering, but the present invention is not limited thereto.

A plurality of semiconductor light emitting devices may be formed on the growth substrate 310 according to the method described with reference to FIG. 10A .

Thereafter, referring to FIG. 10B , after transferring some of the semiconductor light emitting devices formed on the growth substrate 310 to the transfer substrate 320 , a step of removing the growth substrate 310 is performed.

Since some semiconductor light emitting devices transferred to the transfer substrate 320 are transferred to the wiring board 330 through a single transfer process, the some semiconductor light emitting devices are transferred to the transfer substrate 320 at intervals that can form a display device. should be transcribed into

For example, some of the green semiconductor light emitting devices 150a grown on the growth substrate 310 may be transferred to the transfer substrate 320 at predetermined intervals. Here, the distance between the green semiconductor light emitting devices 150a transferred to the transfer substrate 320 is the same as the distance between the green semiconductor light emitting devices 150a to be disposed on the wiring board 330 .

The semiconductor light emitting devices formed on the growth substrate 310 may be transferred to the transfer substrate 320 by a laser lift-off (LLO) method or a chemical lift-off (CLO) method. In this case, when the adhesive material is applied to the transfer substrate 320 , the laser lift-off method or the chemical lift-off method is selectively performed only on the semiconductor light emitting device to which the conductive adhesive is applied. Accordingly, when the growth substrate 310 is subsequently removed, the semiconductor light emitting devices to which the adhesive material is not applied remain on the removed growth substrate 310 .

On the other hand, when using the above-described laser lift-off method, by selectively irradiating a laser to only some of the semiconductor light emitting devices formed on the growth substrate 310, some of the semiconductor light emitting devices formed on the growth substrate 310 are transferred to the transfer substrate ( 320) can be transcribed.

As described above, by applying the adhesive material to the transfer substrate 320 at regular intervals or irradiating the laser at regular intervals, the distance between the semiconductor light emitting devices transferred to the transfer substrate 320 can be adjusted.

Next, referring to FIG. 10B , among the entire area of the wiring board 330 , the transfer substrate 320 and A step of aligning the wiring board 330 is performed.

A region in which semiconductor light emitting devices are to be disposed (hereinafter, a region corresponding to the semiconductor light emitting device) 330a may be formed on the wiring substrate 330 . A region corresponding to the semiconductor light emitting device may be determined by components disposed on the wiring board 330 .

For example, before the semiconductor light emitting device is transferred, at least one of an adhesive material for fixing the semiconductor light emitting device, a wiring electrode, and a reflective layer for improving the luminance of the display device may be formed at a predetermined interval on the wiring board 330 . . A region corresponding to the semiconductor light emitting device may be determined according to a position in which at least one of the above-described adhesive material, wiring electrode, and reflective layer is disposed.

Meanwhile, some of the semiconductor light emitting devices transferred to the transfer substrate 320 are transferred to the wiring substrate 330 through a single transfer process. Accordingly, some of the semiconductor light emitting devices are transferred to the wiring substrate 330 as they are at the intervals transferred to the transfer substrate 320 . Accordingly, an interval at which at least one of the adhesive material, the wiring electrode, and the reflective layer is disposed should be the same as the interval between the semiconductor light emitting devices transferred to the transfer substrate 320 .

Meanwhile, in the step of aligning the transfer substrate 320 and the wiring substrate 330 , one of the transfer substrate 320 and the wiring substrate 330 is moved horizontally with respect to the other one, and then moved vertically with respect to the other one. is done by doing In this specification, an embodiment in which the transfer substrate 320 is moved while the wiring substrate 330 is fixed in order to align the transfer substrate 320 and the wiring substrate 330 is described, but the present invention is not limited thereto. In this specification, for convenience of explanation, horizontal movement of the transfer substrate 320 with respect to the wiring substrate 330 is expressed as “horizontal movement of the transfer substrate”, and the transfer substrate 320 is attached to the wiring substrate 330 . Moving vertically with respect to each other is expressed as "vertical movement of the transfer substrate".

Meanwhile, the step of aligning the transfer substrate 320 and the wiring substrate 330 may be performed by the apparatus shown in FIG. 11 .

11 , an apparatus for aligning the transfer substrate 320 and the wiring substrate 330 includes a pickup tool 340 , a first camera 350 , a second camera 360 , an infrared sensor 370 , and curing. The source 380 may be included.

The pickup tool 340 adsorbs and fixes the transfer substrate 320 , and then moves the transfer substrate 320 horizontally or vertically. Here, a porous vacuum chuck may be used as the pick-up tool 340 .

Meanwhile, the first camera 350 , the second camera 360 , and the infrared sensor 370 may be utilized so that the some semiconductor light emitting devices are accurately transferred to a region corresponding to the some semiconductor light emitting devices. This will be described later.

In order to arrange the some semiconductor light emitting devices in the region corresponding to the some semiconductor light emitting devices, the transfer substrate 320 is horizontally moved so that the some semiconductor light emitting devices overlap the regions corresponding to the some semiconductor light emitting devices. After that, the transfer substrate 320 should be vertically moved with respect to the wiring substrate 330 .

Accordingly, the some of the semiconductor light emitting devices are disposed in a region corresponding to the some of the semiconductor light emitting devices, and in this case, the error range should be within several micrometers.

However, when the transfer substrate 320 and the wiring substrate 330 overlap in the process of aligning the transfer substrate 320 and the wiring substrate 330, the partial semiconductor light emitting devices and the corresponding semiconductor light emitting devices A region is covered by at least one of the pickup tool 340 for moving the transfer substrate 320 , the transfer substrate 320 , and the wiring substrate 330 to correspond to the partial semiconductor light emitting devices and the partial semiconductor light emitting devices The location of the area cannot be confirmed. Accordingly, it becomes difficult to finely adjust the position of the transfer substrate 320 .

To solve this problem, the present invention utilizes the wiring board 330 made of a light-transmitting material. The step of aligning the transfer substrate 320 and the wiring substrate 330 is performed using an image captured by the first camera 350 disposed under the wiring substrate 330 .

When the wiring substrate 330 is made of a light-transmitting material, even if the transfer substrate 320 and the wiring substrate 330 overlap, an image captured by the first camera 350 disposed under the wiring substrate 330 is used. Thus, it is possible to check the positions of the partial semiconductor light emitting devices and regions corresponding to the partial semiconductor light emitting devices.

On the other hand, even when the wiring board 330 is made of a light-transmitting material, at least one of a wiring electrode and a reflective layer disposed on the wiring board 330 causes the partial semiconductor light to be emitted through an image captured by the first camera 350 . It may not be possible to determine the location of the elements. In this case, according to the present invention, the partial semiconductor light emitting devices can be arranged in a region corresponding to the partial semiconductor light emitting devices by overlapping the target region of the wiring substrate 330 and the target region of the transfer substrate 320 .

Here, the target region of the transfer substrate is formed in a region to which the semiconductor light emitting device is not transferred. Meanwhile, the target area of the wiring board 330 is formed at a position different from the area corresponding to the partial semiconductor light emitting device. The target region of the transfer substrate and the target region of the wiring board 330 are positioned so that, when the two target regions overlap each other, the partial semiconductor light emitting devices can overlap in the region corresponding to the partial semiconductor light emitting devices. can be formed in

For example, each of the target area of the transfer substrate and the target area of the wiring board 330 may be formed on the edges of the transfer substrate and the wiring board 330 .

Meanwhile, referring to FIG. 10B , irregularities 321 and 331 may be formed in the target area of the transfer substrate 320 and the target area of the wiring board 330 , respectively. To this end, before aligning the transfer substrate 320 and the wiring substrate 330 , the method may further include forming irregularities in target regions of the transfer substrate 320 and the wiring substrate 330 . The position of the unevenness formed on each of the transfer substrate 320 and the wiring substrate 330 may be checked through the first camera 350 . According to the present invention, the projections 321 and 331 formed on each of the transfer substrate 320 and the wiring substrate 330 are superimposed on each other using an image captured by the first camera 350, so that The partial semiconductor light emitting devices may be disposed in the region.

Finally, referring to FIG. 10C , after fixing some of the semiconductor light emitting devices to regions corresponding to the partial semiconductor light emitting devices, a step of removing the transfer substrate 320 is performed.

By utilizing the adhesive material applied to the wiring board 330 or the unevenness formed on the wiring board 330, or by pressing the transfer substrate 320 to the wiring board 330 with a predetermined pressure, the some of the semiconductor light emitting devices are connected to the wiring board ( 330) can be fixed. This will be described later.

Thereafter, when the transfer substrate 320 is removed, some of the semiconductor light emitting devices remain on the wiring substrate 330 .

As described above, in the present invention, the semiconductor light emitting devices transferred to the transfer substrate 320 are transferred to the wiring substrate 330 through a single transfer process. In this case, the present invention uses an image captured from the lower part of the wiring board 330 made of a light-transmitting material to finely adjust the positions at which the semiconductor light emitting devices are disposed on the wiring board 330 . Through this, according to the present invention, it is possible to transfer semiconductor light emitting devices within an error range of several micrometers.

Meanwhile, the present invention may further include additional means for improving the accuracy of the above-described step of aligning the transfer substrate and the wiring substrate.

12 is a conceptual diagram illustrating a method for improving the accuracy of horizontal and vertical movement of a transfer substrate.

First, in order to improve the horizontal movement accuracy of the transfer substrate 320, the present invention includes the steps of photographing the transfer substrate 320 through the first camera 350, and a second camera disposed above the wiring substrate 330 ( 360) further comprising the step of photographing the wiring board 330, and the step of aligning the transfer substrate 320 and the wiring board 330 is photographed through the first and second cameras 350 and 360. This can be done using the image.

Specifically, before the transfer substrate 320 and the wiring substrate 330 overlap each other, at least some of the semiconductor light emitting devices transferred to the transfer substrate 320 using an image captured by the first camera 350 . One location can be recognized. Here, there may be a plurality of first cameras. If the plurality of first cameras 350a and 350b are used, location recognition accuracy may be improved.

Meanwhile, the positions of the regions corresponding to some of the semiconductor light emitting devices may be recognized using the image captured by the second camera 360 . For example, an adhesive material may be applied to the wiring board 330 at a position where the semiconductor light emitting device is to be transferred, and the position to which the adhesive material is applied may be recognized through an image captured by the second camera 360 . have. Here, there may be a plurality of second cameras. By using the plurality of second cameras 360a and 360b, location recognition accuracy may be improved.

The position to which the transfer substrate 320 should be moved is calculated based on the positions of the some semiconductor light emitting devices and the positions of regions corresponding to the some semiconductor light emitting devices, and the transfer substrate 320 is horizontally moved to the calculated position. can

Meanwhile, referring to FIG. 12 , in order to improve the vertical movement accuracy of the transfer substrate 320 , the present invention utilizes an infrared sensor 370 disposed on the wiring substrate 330 . Specifically, the present invention calculates the distance between the infrared sensor 370 and the region corresponding to the some semiconductor light emitting devices using the infrared sensor 370, and uses the calculated distance to A vertical distance between regions corresponding to some of the semiconductor light emitting devices is calculated. The vertical movement distance of the transfer substrate 320 may be determined using the calculated vertical distance.

If the method described in FIG. 12 is used, the accuracy of horizontal movement and vertical movement of the transfer substrate 320 may be improved.

Meanwhile, the partial semiconductor light emitting devices disposed in the region corresponding to the partial semiconductor light emitting device may be fixed to the region corresponding to the partial semiconductor light emitting device in various ways.

Hereinafter, a method of fixing the partial semiconductor light emitting devices to regions corresponding to the partial semiconductor light emitting devices will be described.

13 and 14 are conceptual views illustrating a method of fixing semiconductor light emitting devices to a wiring board.

Before the transfer substrate 320 and the wiring substrate 330 are aligned, an adhesive material may be applied to a portion of the wiring substrate 330 . For example, the adhesive material may be a UV curable adhesive. However, the present invention is not limited thereto, and the adhesive material may be a thermosetting adhesive.

In this case, the region corresponding to the partial semiconductor light emitting device is the region to which the adhesive material is applied. 13 , when the transfer substrate 320 and the wiring board are aligned so that the partial semiconductor light emitting devices are disposed in the region corresponding to the partial semiconductor light emitting devices, the partial semiconductor light emitting devices are coated on the wiring board 330 . is in contact with the adhesive material 332 .

Thereafter, when UV is applied to the adhesive material 332 using the curing source 380 described with reference to FIG. 11 , the adhesive material 332 is cured and some of the semiconductor light emitting devices are fixed to the wiring board 330 . Thereafter, when the transfer substrate 320 is removed, some of the semiconductor light emitting devices remain on the wiring substrate 330 .

Meanwhile, referring to FIG. 14 , irregularities 333 may be formed in a portion of the wiring board 330 . In this case, the region corresponding to the partial semiconductor light emitting device is a region in which the unevenness 333 is formed.

When the transfer substrate 320 is pressed to the wiring board 330 after alignment so that the some semiconductor light emitting devices overlap the unevenness 333 , the pressure is concentrated on the some semiconductor light emitting devices due to the unevenness 333 . . Due to this, some of the semiconductor light emitting devices are fixed to the unevenness 333 . Thereafter, when the transfer substrate 320 is removed, some of the semiconductor light emitting devices remain on the wiring substrate 330 .

On the other hand, in addition to the above-described method, when the adhesive force between the transfer substrate 320 and some of the semiconductor light emitting devices is not large, after aligning the transfer substrate 320 and the wiring substrate 330, the transfer substrate 320 is pressed. By itself, some of the semiconductor light emitting devices may be fixed to the wiring board 330 .

On the other hand, if the above-described method is used, the green, blue, and red semiconductor light emitting devices can be transferred to the wiring board 330 only by three transfer processes.

Hereinafter, a method of transferring green, blue, and red semiconductor light emitting devices to the wiring board 330 in order will be described.

15A to 15C and 16 are conceptual views illustrating a process of transferring green, blue, and red semiconductor light emitting devices, respectively, to a wiring board.

Referring to FIG. 15A , some of the green semiconductor light emitting devices 150a grown on the growth substrate 310 are transferred to the transfer substrate 320a at predetermined intervals. In this case, the spacing between the green semiconductor light emitting devices 150a transferred to the transfer substrate 320a should match the spacing between the regions 330a corresponding to the green semiconductor light emitting devices formed on the wiring board 330 .

Next, referring to FIG. 15B , in a state in which the green semiconductor light emitting devices 150a are transferred to the wiring board 330 , the blue semiconductor light emitting devices 150b may be transferred. The blue semiconductor light emitting devices 150b may be transferred to the transfer substrate 320b at predetermined intervals, and the distance between the blue semiconductor light emitting devices 150b is an interval between regions corresponding to the blue semiconductor light emitting devices formed on the wiring board 330 . should match

Finally, referring to FIG. 15C , in a state in which the green and blue semiconductor light emitting devices 150a and 150b are transferred to the wiring board 330 , the red semiconductor light emitting devices 150c may be transferred.

Using the method described with reference to FIGS. 15A to 15C , a display device including pixels including one green, one blue, and one red semiconductor light emitting device can be manufactured by only three transfer processes.

Meanwhile, as shown in FIG. 16 , when one pixel 400 includes two each of green, blue, and red semiconductor light emitting devices, the display device can be manufactured by only six transfer processes.

As described above, according to the present invention, when a display device is manufactured using semiconductor light emitting devices having a size of several tens of micrometers, it is possible to shorten the manufacturing time of the display device.

It will be apparent to those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit and essential characteristics of the present invention.

In addition, the above detailed description should not be construed as limiting in all respects, but should be considered as exemplary. The scope of the present invention should be determined by a reasonable interpretation of the appended claims, and all modifications within the equivalent scope of the present invention are included in the scope of the present invention.

Claims (8)

growing a plurality of semiconductor light emitting devices on a growth substrate;
transferring some of the semiconductor light emitting devices to a transfer substrate;
aligning the transfer substrate and the wiring board so that the partial semiconductor light emitting devices are disposed in an area corresponding to the partial semiconductor light emitting devices among the entire area of the wiring board;
and fixing the some semiconductor light emitting devices to regions corresponding to the some semiconductor light emitting devices, and then removing the transfer substrate;
The wiring board is made of a light-transmitting material,
The step of aligning the transfer board and the wiring board is performed using an image captured by a first camera disposed under the wiring board,
In the step of aligning the transfer substrate and the wiring substrate, the partial semiconductor light emitting devices are disposed in the region corresponding to the partial semiconductor light emitting device by overlapping the target region of the wiring substrate and the target region of the transfer substrate to become,
Before aligning the transfer substrate and the wiring substrate,
forming irregularities in target regions of the transfer substrate and the wiring substrate;
photographing the transfer substrate through the first camera before the transfer substrate and the wiring substrate overlap each other, confirming the positions of the irregularities formed on each of the transfer substrate and the wiring substrate, and overlapping them; and
The method further comprising: photographing the wiring board through a second camera disposed above the wiring board, and recognizing a position where the adhesive material is applied, which is a position to which the semiconductor light emitting device is to be transferred, on the wiring board;
The method of claim 1, wherein the step of aligning the transfer substrate and the wiring substrate is performed using images captured by the first camera and the second camera. delete The method of claim 1,
The step of aligning the transfer substrate and the wiring substrate comprises:
A method of manufacturing a display device, characterized in that the target area of the wiring board and the target area of the transfer substrate are overlapped by using the image captured by the first camera. delete delete The method of claim 1,
The step of aligning the transfer substrate and the wiring substrate comprises:
The method of manufacturing a display device, characterized in that the display device manufacturing method is performed using the positions of the partial semiconductor light emitting devices and the positions of regions corresponding to the partial semiconductor light emitting devices recognized in the image captured by the first camera. delete The method of claim 1,
The step of aligning the transfer substrate and the wiring substrate comprises:
This is performed using the positions of the some semiconductor light emitting devices recognized in the image captured by the first camera and the positions of regions corresponding to the some semiconductor light emitting devices recognized in the image captured by the second camera. A method of manufacturing a display device, characterized in that.

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