KR102347927B1 - Display device using semiconductor light emitting device - Google Patents

Abstract

The present invention relates to a display device using a semiconductor light emitting device and a method for manufacturing the same, and more particularly, to a display device using a semiconductor light emitting device. A display device according to the present invention includes a plurality of semiconductor light emitting device packages, and a substrate to which the plurality of semiconductor light emitting device packages are coupled, wherein the plurality of semiconductor light emitting device packages each include a plurality of semiconductor light emitting devices; a first insulating layer to which the plurality of semiconductor light emitting devices are coupled; and a second insulating layer overlapping the first insulating layer and having a plurality of through electrodes electrically connected to the plurality of semiconductor light emitting devices; .

Description

Display device using semiconductor light emitting device {DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING DEVICE}

The present invention relates to a display device and a method for manufacturing the same, and more particularly, to a display device using a semiconductor light emitting device.

Recently, in the field of display technology, a display device having excellent characteristics such as a thin film type and a flexible type has been developed. In contrast, currently commercialized main displays are represented by LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes). However, in the case of LCD, there are problems in that the response time is not fast and flexible implementation is difficult, and in the case of AMOLED, there are weaknesses in that the lifespan is short and the mass production yield is not good.

On the other hand, a light emitting diode (Light Emitting Diode: LED) is a well-known semiconductor light emitting device that converts electric current into light. It has been used as a light source for display images of electronic devices including communication devices. Accordingly, a method for solving the above problems by implementing a display using the semiconductor light emitting device may be proposed.

In the case of using a package in which the chip of the semiconductor light emitting device is integrated in the form of a die, there is a disadvantage in that it is not suitable for a small or high-resolution display field because a pixel has a size of a millimeter level due to the limitations of the chip size and the package size.

Accordingly, research is being conducted on the technical field of applying the semiconductor light emitting device itself to a display. However, since the size of individual light emitting devices is tens of micrometers or less, it becomes very difficult to implement a target display by handling and integrating these devices with a conventional technique, and has a disadvantage in that the yield is very low in the process. none. In addition, as the size of the contact electrode of the semiconductor light emitting device is significantly reduced due to the miniaturization, it is difficult to connect the wiring to the contact electrode of the micro light emitting device having a fine structure using the conventional wiring method.

Accordingly, the present invention proposes a display device based on a semiconductor light emitting device having a size of several to tens of micrometers, but having a new wiring structure capable of realizing a large display at low cost.

SUMMARY OF THE INVENTION One object of the present invention is to provide a display device and a manufacturing method having a new structure that is easy to manufacture while supporting a high resolution.

Another object of the present invention is to provide a display device in which wiring of a semiconductor light emitting device is easy.

The display device according to the present invention introduces a wiring process through fine photo-lithography, a plating process, and a thin film patterning process to the structure of a micro light emitting diode, which is difficult to electrically connect, so that a micro light source chip and a printed circuit board (PCB) ) to provide a structure that facilitates mutual electrical connection between them.

As a specific example, the display device includes a plurality of semiconductor light emitting device packages, and a substrate to which the plurality of semiconductor light emitting device packages are coupled, and the plurality of semiconductor light emitting device packages, respectively, include a plurality of semiconductor light emitting devices and , a first insulating layer to which the plurality of semiconductor light emitting devices are coupled, and a second insulating layer overlapping the first insulating layer and having a plurality of through electrodes electrically connected to the plurality of semiconductor light emitting devices; do.

In an embodiment, a common wiring connected to the first conductive electrodes of the plurality of semiconductor light emitting devices is disposed on the first insulating layer. Any one of the plurality of through electrodes is electrically connected to the common wiring. The rest of the plurality of through electrodes are electrically connected to second conductivity-type electrodes of the plurality of semiconductor light emitting devices, respectively. The common wiring may be covered by the second insulating layer.

In an embodiment, the first insulating layer is disposed on an upper surface of the second insulating layer, and a plurality of electrode pads electrically connected to the through electrodes are disposed on a lower surface of the second insulating layer.

In an embodiment, the plurality of semiconductor light emitting devices includes a first semiconductor light emitting device, a second semiconductor light emitting device and a third semiconductor light emitting device coupled to the first insulating layer to form one semiconductor light emitting device package.

The display device may include light generated from at least one of the first semiconductor light emitting device, the second semiconductor light emitting device, and the third semiconductor light emitting device such that the plurality of semiconductor light emitting devices form a red sub-pixel, a green sub-pixel, and a blue sub-pixel. It contains a conversion layer that converts the color of The first insulating layer may be disposed between the second insulating layer and the conversion layer to form a built-in interposer.

In an embodiment, the first insulating layer and the second insulating layer are formed of the same material.

In the display device according to the present invention, since the light source chip is formed in a form in which an interposer including a conductive wire and a through electrode is embedded in a micro light emitting diode, integration on the driving board is achieved without the need to manufacture additional parts for electrical connection. make it possible It also provides additional functions such as mechanical rigidity to the chip and the chip package.

According to the display device according to the present invention, the interposer element having a fine structure can be manufactured by an integrated production technology such as general photolithography, thin film deposition, and etching process technology. It becomes easy to extend the structure.

In addition, in the present invention, it is possible to manufacture a flexible substrate, and it is possible to implement a three-dimensional display by attaching a micro light emitting diode to an object to which a curved surface or various curved design is applied.

In addition, in the present invention, the separated pixels can form a unit substrate, and the unit substrate is very small in size, which is very suitable for reducing the pixel interval of a large display such as a signage. In this case, since the unit substrate is larger than the individual semiconductor light emitting devices, manufacturing may be easier than in the case of picking and placing the semiconductor light emitting devices.

1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device of the present invention.
FIG. 2 is a partially enlarged view of part A of FIG. 1 , and FIGS. 3A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2 .
4 is a conceptual diagram illustrating the flip-chip type semiconductor light emitting device of FIG. 3 .
5A to 5C are conceptual views illustrating various forms of implementing colors in relation to a flip-chip type semiconductor light emitting device.
6 is a cross-sectional view illustrating a method of manufacturing a display device using a semiconductor light emitting device of the present invention.
7 is a perspective view illustrating another embodiment of a display device using the semiconductor light emitting device of the present invention.
FIG. 8 is a cross-sectional view taken along line DD of FIG. 7 ;
9 is a conceptual diagram illustrating the vertical semiconductor light emitting device of FIG. 8 .
10 is a partial perspective view for explaining another embodiment of the present invention.
11 is a cross-sectional view taken along line EE of FIG. 10 .
FIG. 12 is a cross-sectional view taken along line FF of FIG. 10 ;
13 is a plan view of a semiconductor light emitting device package of the present invention.

Hereinafter, the embodiments disclosed in the present specification will be described in detail with reference to the accompanying drawings, but the same or similar components are assigned the same reference numbers regardless of reference numerals, and redundant description thereof will be omitted. The suffixes "module" and "part" for components used in the following description are given or mixed in consideration of only the ease of writing the specification, and do not have distinct meanings or roles by themselves. In addition, in describing the embodiments disclosed in the present specification, if it is determined that detailed descriptions of related known technologies may obscure the gist of the embodiments disclosed in this specification, the detailed description thereof will be omitted. In addition, it should be noted that the accompanying drawings are only for easy understanding of the embodiments disclosed in the present specification, and should not be construed as limiting the technical spirit disclosed herein by the accompanying drawings.

It is also understood that when an element, such as a layer, region, or substrate, is referred to as being “on” another component, it may be directly present on the other element or intervening elements in between. There will be.

The display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation system, and a slate PC. , Tablet PC, Ultra Book, digital TV, desktop computer, and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiment described in the present specification may be applied to a display capable device even in a new product form to be developed later.

1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device of the present invention.

As illustrated, information processed by the control unit of the display apparatus 100 may be displayed using a flexible display.

The flexible display includes a display that can be bent, bent, twisted, folded, or rolled by an external force. For example, the flexible display may be a display manufactured on a thin and flexible substrate that can be bent, bent, folded, or rolled like paper while maintaining the display characteristics of a conventional flat panel display.

In a state in which the flexible display is not bent (eg, a state having an infinite radius of curvature, hereinafter referred to as a first state), the display area of the flexible display becomes a flat surface. In a state bent by an external force in the first state (eg, a state having a finite radius of curvature, hereinafter referred to as a second state), the display area may be a curved surface. As shown, the information displayed in the second state may be visual information output on the curved surface. Such visual information is implemented by independently controlling the emission of sub-pixels arranged in a matrix form. The unit pixel means a minimum unit for realizing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as a type of a semiconductor light emitting device that converts current into light. The light emitting diode is formed to have a small size, so that it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in more detail with reference to the drawings.

2 is a partially enlarged view of part A of FIG. 1, FIGS. 3A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2, and FIG. 4 is a conceptual diagram illustrating the flip-chip type semiconductor light emitting device of FIG. 3A, 5A to 5C are conceptual views illustrating various forms of implementing colors in relation to a flip-chip type semiconductor light emitting device.

2, 3A, and 3B , the display device 100 using a passive matrix (PM) type semiconductor light emitting device is exemplified as the display device 100 using a semiconductor light emitting device. However, the examples described below are also applicable to an active matrix (AM) type semiconductor light emitting device.

The display device 100 includes a substrate 110 , a first electrode 120 , a conductive adhesive layer 130 , a second electrode 140 , and a plurality of semiconductor light emitting devices 150 .

The substrate 110 may be a flexible substrate. For example, to implement a flexible display device, the substrate 110 may include glass or polyimide (PI). In addition, any material such as polyethylene naphthalate (PEN) or polyethylene terephthalate (PET) may be used as long as it has insulating properties and is flexible. In addition, the substrate 110 may be made of either a transparent material or an opaque material.

The substrate 110 may be a wiring substrate on which the first electrode 120 is disposed, and thus the first electrode 120 may be located on the substrate 110 .

As shown, the insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is positioned, and the auxiliary electrode 170 may be positioned on the insulating layer 160 . In this case, a state in which the insulating layer 160 is laminated on the substrate 110 may be a single wiring board. More specifically, the insulating layer 160 is made of an insulating and flexible material such as polyimide (PI, Polyimide), PET, PEN, etc., and is integrally formed with the substrate 110 to form a single substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150 , is located on the insulating layer 160 , and is disposed to correspond to the position of the first electrode 120 . For example, the auxiliary electrode 170 may have a dot shape and may be electrically connected to the first electrode 120 by an electrode hole 171 penetrating the insulating layer 160 . The electrode hole 171 may be formed by filling the via hole with a conductive material.

Referring to the drawings, the conductive adhesive layer 130 is formed on one surface of the insulating layer 160 , but the present invention is not necessarily limited thereto. For example, a layer performing a specific function is formed between the insulating layer 160 and the conductive adhesive layer 130 , or the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160 . is also possible In a structure in which the conductive adhesive layer 130 is disposed on the substrate 110 , the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity, and for this purpose, a material having conductivity and a material having adhesiveness may be mixed in the conductive adhesive layer 130 . In addition, the conductive adhesive layer 130 has flexibility, thereby enabling a flexible function in the display device.

For this example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 may be configured as a layer that allows electrical interconnection in the Z direction passing through the thickness, but has electrical insulation in the horizontal X-Y direction. Accordingly, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (however, hereinafter referred to as a 'conductive adhesive layer').

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member, and when heat and pressure are applied, only a specific portion has conductivity by the anisotropic conductive medium. Hereinafter, it will be described that heat and pressure are applied to the anisotropic conductive film, but other methods are also possible in order for the anisotropic conductive film to have partial conductivity. In this method, for example, only one of the heat and pressure may be applied or UV curing may be performed.

In addition, the anisotropic conductive medium may be, for example, conductive balls or conductive particles. As shown, in this example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member, and when heat and pressure are applied, only a specific portion has conductivity by the conductive balls. The anisotropic conductive film may be in a state in which a core of a conductive material is covered with a plurality of particles covered by an insulating film made of a polymer material. . At this time, the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film. As a more specific example, heat and pressure are applied as a whole to the anisotropic conductive film, and an electrical connection in the Z-axis direction is partially formed by a height difference of a counterpart adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state in which an insulating core contains a plurality of particles coated with a conductive material. In this case, the conductive material is deformed (compressed) in the portion to which heat and pressure are applied, so that it has conductivity in the thickness direction of the film. As another example, a form in which the conductive material penetrates the insulating base member in the Z-axis direction to have conductivity in the thickness direction of the film is also possible. In this case, the conductive material may have a pointed end.

As shown, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of the insulating base member. More specifically, the insulating base member is formed of a material having an adhesive property, and the conductive balls are intensively disposed on the bottom portion of the insulating base member, and when heat and pressure are applied from the base member, it is deformed together with the conductive balls. Accordingly, it has conductivity in the vertical direction.

However, the present invention is not necessarily limited thereto, and the anisotropic conductive film has a form in which conductive balls are randomly mixed in an insulating base member, or is composed of a plurality of layers and conductive balls are arranged on one layer (double- ACF) are all possible.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which a conductive ball is mixed with an insulating and adhesive base material. Also, a solution containing conductive particles may be a solution containing conductive particles or nano particles.

Referring back to the drawing, the second electrode 140 is spaced apart from the auxiliary electrode 170 and is positioned on the insulating layer 160 . That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 in which the auxiliary electrode 170 and the second electrode 140 are located.

After the conductive adhesive layer 130 is formed in the state where the auxiliary electrode 170 and the second electrode 140 are positioned on the insulating layer 160, the semiconductor light emitting device 150 is connected in a flip-chip form by applying heat and pressure. In this case, the semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140 .

Referring to FIG. 4 , the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type electrode 156 , a p-type semiconductor layer 155 on which the p-type electrode 156 is formed, an active layer 154 formed on the p-type semiconductor layer 155 , an active layer ( It includes an n-type semiconductor layer 153 formed on the 154 , and an n-type electrode 152 spaced apart from the p-type electrode 156 in the horizontal direction on the n-type semiconductor layer 153 . In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 and the conductive adhesive layer 130 , and the n-type electrode 152 may be electrically connected to the second electrode 140 .

Referring back to FIGS. 2, 3A, and 3B , the auxiliary electrode 170 is formed to be elongated in one direction, so that one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150 . For example, p-type electrodes of left and right semiconductor light emitting devices with respect to the auxiliary electrode may be electrically connected to one auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is press-fitted into the conductive adhesive layer 130 by heat and pressure, through which the p-type electrode 156 and the auxiliary electrode 170 of the semiconductor light emitting device 150 are pressed. Only a portion and a portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 have conductivity, and there is no press-fitting of the semiconductor light emitting device in the remaining portion, so that the semiconductor light emitting device does not have conductivity. As described above, the conductive adhesive layer 130 not only interconnects the semiconductor light emitting device 150 and the auxiliary electrode 170 and between the semiconductor light emitting device 150 and the second electrode 140 , but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitute a light emitting device array, and the phosphor layer 180 is formed on the light emitting device array.

The light emitting device array may include a plurality of semiconductor light emitting devices having different luminance values. Each semiconductor light emitting device 150 constitutes a unit pixel and is electrically connected to the first electrode 120 . For example, there may be a plurality of first electrodes 120 , the semiconductor light emitting devices may be arranged in, for example, several columns, and the semiconductor light emitting devices in each column may be electrically connected to any one of the plurality of first electrodes.

In addition, since the semiconductor light emitting devices are connected in a flip-chip form, semiconductor light emitting devices grown on a transparent dielectric substrate can be used. In addition, the semiconductor light emitting devices may be, for example, nitride semiconductor light emitting devices. Since the semiconductor light emitting device 150 has excellent luminance, individual unit pixels can be configured even with a small size.

As illustrated, barrier ribs 190 may be formed between the semiconductor light emitting devices 150 . In this case, the partition wall 190 may serve to separate individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130 . For example, by inserting the semiconductor light emitting device 150 into the anisotropic conductive film, the base member of the anisotropic conductive film may form the barrier rib.

In addition, when the base member of the anisotropic conductive film is black, the barrier rib 190 may have reflective properties and increase contrast even without a separate black insulator.

As another example, a reflective barrier rib may be separately provided as the barrier rib 190 . In this case, the barrier rib 190 may include a black or white insulator depending on the purpose of the display device. When the barrier rib of the white insulator is used, it is possible to increase reflectivity, and when the barrier rib of the black insulator is used, it is possible to have reflective properties and increase the contrast.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150 . For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 180 performs a function of converting the blue (B) light into a color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting an individual pixel.

That is, a red phosphor 181 capable of converting blue light into red (R) light may be stacked on the blue semiconductor light emitting device 151 at a position constituting a unit pixel of red color, and a position constituting a unit pixel of green color In , a green phosphor 182 capable of converting blue light into green (G) light may be stacked on the blue semiconductor light emitting device 151 . In addition, only the blue semiconductor light emitting device 151 may be used alone in the portion constituting the blue unit pixel. In this case, unit pixels of red (R), green (G), and blue (B) may form one pixel. More specifically, a phosphor of one color may be stacked along each line of the first electrode 120 . Accordingly, one line in the first electrode 120 may be an electrode for controlling one color. That is, red (R), green (G), and blue (B) may be sequentially disposed along the second electrode 140 , thereby realizing a unit pixel.

However, the present invention is not necessarily limited thereto, and instead of the phosphor, the semiconductor light emitting device 150 and the quantum dot (QD) are combined to implement unit pixels of red (R), green (G), and blue (B). have.

In addition, a black matrix 191 may be disposed between each of the phosphor layers to improve contrast. That is, the black matrix 191 may improve contrast of light and dark.

However, the present invention is not necessarily limited thereto, and other structures for implementing blue, red, and green colors may be applied.

Referring to FIG. 5A , each of the semiconductor light emitting devices 150 mainly uses gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together to emit a variety of light including blue light. It can be implemented as a device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a sub-pixel, respectively. For example, red, green, and blue semiconductor light emitting devices R, G, and B are alternately arranged, and unit pixels of red, green, and blue colors by the red, green and blue semiconductor light emitting devices The pixels form one pixel, through which a full-color display can be realized.

Referring to FIG. 5B , the semiconductor light emitting device may include a white light emitting device W in which a yellow phosphor layer is provided for each device. In this case, a red phosphor layer 181 , a green phosphor layer 182 , and a blue phosphor layer 183 may be provided on the white light emitting device W to form a unit pixel. In addition, a unit pixel may be formed on the white light emitting device W by using a color filter in which red, green, and blue are repeated.

Referring to FIG. 5C , a structure in which a red phosphor layer 181 , a green phosphor layer 182 , and a blue phosphor layer 183 are provided on the ultraviolet light emitting device UV is also possible. In this way, the semiconductor light emitting device can be used in the entire region not only for visible light but also for ultraviolet (UV) light, and can be extended in the form of a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of the upper phosphor. .

Referring back to this example, the semiconductor light emitting device 150 is positioned on the conductive adhesive layer 130 to constitute a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent luminance, individual unit pixels can be configured even with a small size. The size of the individual semiconductor light emitting device 150 may have a side length of 80 μm or less, and may be a rectangular or square device. In the case of a rectangle, the size may be 20X80㎛ or less.

In addition, even when a square semiconductor light emitting device 150 having a side length of 10 μm is used as a unit pixel, sufficient brightness to form a display device appears. Accordingly, for example, when the unit pixel is a rectangular pixel having one side of 600 μm and the other side of 300 μm, the distance between the semiconductor light emitting devices is relatively large. Accordingly, in this case, it is possible to implement a flexible display device having HD image quality.

The display device using the semiconductor light emitting device described above can be manufactured by a new type of manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG. 6 .

6 is a cross-sectional view illustrating a method of manufacturing a display device using a semiconductor light emitting device of the present invention.

Referring to this figure, first, the conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are positioned. An insulating layer 160 is laminated on the first substrate 110 to form one substrate (or wiring board), and the wiring substrate includes a first electrode 120 , an auxiliary electrode 170 , and a second electrode 140 . this is placed In this case, the first electrode 120 and the second electrode 140 may be disposed in a mutually orthogonal direction. In addition, in order to implement a flexible display device, the first substrate 110 and the insulating layer 160 may each include glass or polyimide (PI).

The conductive adhesive layer 130 may be implemented by, for example, an anisotropic conductive film, and for this purpose, the anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is positioned.

Next, the second substrate 112 corresponding to the positions of the auxiliary electrode 170 and the second electrodes 140 and on which the plurality of semiconductor light emitting devices 150 constituting individual pixels are located is formed with the semiconductor light emitting device 150 . ) is disposed to face the auxiliary electrode 170 and the second electrode 140 .

In this case, the second substrate 112 is a growth substrate on which the semiconductor light emitting device 150 is grown, and may be a sapphire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in units of wafers, the semiconductor light emitting device can be effectively used in a display device by having an interval and a size that can form a display device.

Then, the wiring board and the second board 112 are thermocompression-bonded. For example, the wiring substrate and the second substrate 112 may be thermocompression-bonded by applying an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermocompression bonding. Due to the properties of the anisotropic conductive film having conductivity by thermocompression bonding, only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity, and through this, the electrodes and the semiconductor light emission. The device 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and through this, a barrier rib may be formed between the semiconductor light emitting devices 150 .

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off (LLO) method or a chemical lift-off (CLO) method.

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating silicon oxide (SiOx) or the like on the wiring board to which the semiconductor light emitting device 150 is coupled.

In addition, the method may further include forming a phosphor layer on one surface of the semiconductor light emitting device 150 . For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red or green phosphor for converting the blue (B) light into the color of the unit pixel is the blue semiconductor light emitting device. A layer may be formed on one surface of the device.

The manufacturing method or structure of the display device using the semiconductor light emitting device described above may be modified in various forms. As an example, a vertical semiconductor light emitting device may also be applied to the display device described above. Hereinafter, a vertical structure will be described with reference to FIGS. 5 and 6 .

In addition, in the modification or embodiment described below, the same or similar reference numerals are assigned to the same or similar components as those of the preceding example, and the description is replaced with the first description.

7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, FIG. 8 is a cross-sectional view taken along line DD of FIG. 7 , and FIG. 9 is a conceptual view showing the vertical semiconductor light emitting device of FIG. 8 to be.

Referring to the drawings, the display device may be a display device using a passive matrix (PM) type vertical semiconductor light emitting device.

The display device includes a substrate 210 , a first electrode 220 , a conductive adhesive layer 230 , a second electrode 240 , and a plurality of semiconductor light emitting devices 250 .

The substrate 210 is a wiring substrate on which the first electrode 220 is disposed, and may include polyimide (PI) to implement a flexible display device. In addition, any material that has insulating properties and is flexible may be used.

The first electrode 220 is positioned on the substrate 210 and may be formed as a bar-shaped electrode long in one direction. The first electrode 220 may serve as a data electrode.

The conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is positioned. Like a display device to which a flip chip type light emitting element is applied, the conductive adhesive layer 230 is an anisotropic conductive film (ACF), an anisotropic conductive paste, and a solution containing conductive particles. ), and so on. However, in this embodiment as well, a case in which the conductive adhesive layer 230 is implemented by an anisotropic conductive film is exemplified.

After the anisotropic conductive film is positioned on the substrate 210 in a state where the first electrode 220 is positioned, when the semiconductor light emitting device 250 is connected by applying heat and pressure, the semiconductor light emitting device 250 becomes the first It is electrically connected to the electrode 220 . In this case, the semiconductor light emitting device 250 is preferably disposed on the first electrode 220 .

The electrical connection is created because, as described above, when heat and pressure are applied to the anisotropic conductive film, it partially has conductivity in the thickness direction. Accordingly, the anisotropic conductive film is divided into a conductive portion 231 and a non-conductive portion 232 in the thickness direction.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 implements not only electrical connection but also mechanical bonding between the semiconductor light emitting device 250 and the first electrode 220 .

As described above, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230 and constitutes individual pixels in the display device through this. Since the semiconductor light emitting device 250 has excellent luminance, individual unit pixels can be configured even with a small size. The size of the individual semiconductor light emitting device 250 may have a side length of 80 μm or less, and may be a rectangular or square device. In the case of a rectangle, the size may be 20X80㎛ or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 disposed in a direction crossing the longitudinal direction of the first electrode 220 and electrically connected to the vertical semiconductor light emitting device 250 are positioned between the vertical semiconductor light emitting devices.

Referring to FIG. 9 , the vertical semiconductor light emitting device includes a p-type electrode 256 , a p-type semiconductor layer 255 formed on the p-type electrode 256 , and an active layer 254 formed on the p-type semiconductor layer 255 . ), an n-type semiconductor layer 253 formed on the active layer 254 , and an n-type electrode 252 formed on the n-type semiconductor layer 253 . In this case, the lower p-type electrode 256 may be electrically connected to the first electrode 220 and the conductive adhesive layer 230 , and the upper n-type electrode 252 may be a second electrode 240 to be described later. ) can be electrically connected to. The vertical semiconductor light emitting device 250 has a great advantage in that it is possible to reduce the chip size because electrodes can be arranged up and down.

Referring back to FIG. 8 , a phosphor layer 280 may be formed on one surface of the semiconductor light emitting device 250 . For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and a phosphor layer 280 for converting the blue (B) light into the color of a unit pixel is provided. can be In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue light into red (R) light may be stacked on the blue semiconductor light emitting device 251 at a position forming a unit pixel of red color, and a position constituting a unit pixel of green color In , a green phosphor 282 capable of converting blue light into green (G) light may be stacked on the blue semiconductor light emitting device 251 . In addition, only the blue semiconductor light emitting device 251 may be used alone in the portion constituting the blue unit pixel. In this case, unit pixels of red (R), green (G), and blue (B) may form one pixel.

However, the present invention is not necessarily limited thereto, and as described above in a display device to which a flip chip type light emitting device is applied, other structures for implementing blue, red, and green colors may be applied.

Referring back to the present embodiment, the second electrode 240 is positioned between the semiconductor light emitting devices 250 and is electrically connected to the semiconductor light emitting devices 250 . For example, the semiconductor light emitting devices 250 may be arranged in a plurality of columns, and the second electrode 240 may be positioned between the columns of the semiconductor light emitting devices 250 .

Since the distance between the semiconductor light emitting devices 250 constituting individual pixels is sufficiently large, the second electrode 240 may be positioned between the semiconductor light emitting devices 250 .

The second electrode 240 may be formed as a bar-shaped electrode long in one direction, and may be disposed in a direction perpendicular to the first electrode.

Also, the second electrode 240 and the semiconductor light emitting device 250 may be electrically connected to each other by a connection electrode protruding from the second electrode 240 . More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250 . For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a portion of the ohmic electrode by printing or deposition. Through this, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 may be electrically connected.

As illustrated, the second electrode 240 may be positioned on the conductive adhesive layer 230 . In some cases, a transparent insulating layer (not shown) including silicon oxide (SiOx) may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. In addition, the second electrode 240 may be formed to be spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as indium tin oxide (ITO) is used to position the second electrode 240 on the semiconductor light emitting device 250, the ITO material has a problem of poor adhesion to the n-type semiconductor layer. have. Accordingly, the present invention has the advantage of not using a transparent electrode such as ITO by locating the second electrode 240 between the semiconductor light emitting devices 250 . Therefore, it is possible to improve light extraction efficiency by using a conductive material having good adhesion to the n-type semiconductor layer as a horizontal electrode without being limited by the selection of a transparent material.

As illustrated, a barrier rib 290 may be positioned between the semiconductor light emitting devices 250 . That is, a barrier rib 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 constituting individual pixels. In this case, the partition wall 290 may serve to separate individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 230 . For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film may form the partition wall.

In addition, when the base member of the anisotropic conductive film is black, the barrier rib 290 may have reflective properties and increase contrast even without a separate black insulator.

As another example, as the barrier rib 190 , a reflective barrier rib may be separately provided. The barrier rib 290 may include a black or white insulator depending on the purpose of the display device.

If the second electrode 240 is directly positioned on the conductive adhesive layer 230 between the semiconductor light emitting device 250 , the barrier rib 290 is formed between the vertical semiconductor light emitting device 250 and the second electrode 240 . can be located between Accordingly, individual unit pixels can be configured with a small size by using the semiconductor light emitting device 250 , and the distance between the semiconductor light emitting devices 250 is relatively large enough to connect the second electrode 240 to the semiconductor light emitting device 250 . ), and there is an effect of realizing a flexible display device having HD picture quality.

Also, as illustrated, a black matrix 291 may be disposed between each phosphor to improve contrast. That is, the black matrix 291 may improve contrast of light and dark.

As described above, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230 and constitutes individual pixels in the display device through this. Since the semiconductor light emitting device 250 has excellent luminance, individual unit pixels can be configured even with a small size. Accordingly, a full-color display in which unit pixels of red (R), green (G), and blue (B) constitute one pixel may be implemented by the semiconductor light emitting device.

In the display using the semiconductor light emitting device of the present invention described above, the semiconductor light emitting device grown on the growth substrate is transferred to the wiring board using an anisotropic conductive film (ACF). However, this method has disadvantages in that it is difficult to secure manufacturing reliability and the manufacturing cost is high. In particular, in the case of digital signage, since a flexible property is not required, a different approach is required for a display using a semiconductor light emitting device.

Hereinafter, in the present invention, in order to overcome the technical difficulties described above and to realize a high-resolution display based on an ultra-small micro light emitting diode, a pixel structure for a display based on a micro blue light emitting diode composed of several to several tens of micrometers in a new way and a method for manufacturing the same.

More specifically, in the present invention, a structure of a semiconductor light emitting device package in which an ultra-small blue semiconductor light emitting device implements RGB and a structure in which such a package is easily wired to a substrate are presented.

Hereinafter, a display device according to another embodiment of the present invention using a semiconductor light emitting device package will be described in more detail with reference to the drawings.

10 is a partial perspective view for explaining another embodiment of the present invention, FIG. 11 is a cross-sectional view taken along line EE of FIG. 10, FIG. 12 is a cross-sectional view taken along line FF of FIG. 10, and FIG. 13 is the present invention is a plan view of a semiconductor light emitting device package of

10, 11, 12 and 13 , the display device 1000 using a passive matrix (PM) type semiconductor light emitting device is exemplified as the display device 1000 using a semiconductor light emitting device. . However, the examples described below are also applicable to an active matrix (AM) type semiconductor light emitting device.

The display apparatus 1000 includes a substrate 1010 and a plurality of semiconductor light emitting device packages 1050 .

The substrate 1010 may be a wiring substrate on which the first electrode 1020 and the second electrode 1040 are disposed. Accordingly, the first electrode 1020 and the second electrode 1040 may be positioned on the substrate 1010 . In this case, the first electrode 1020 and the second electrode 1040 may be wiring electrodes.

The substrate 1010 may be formed of a material that is insulating but is not flexible. In addition, the substrate 1010 may be made of either a transparent material or an opaque material.

Referring to the drawings, the semiconductor light emitting device package 1050 is coupled to one surface of the substrate 1010 . For example, the electrode pad of the semiconductor light emitting device package 1050 may be coupled to the wiring electrode by soldering or the like. In this case, the conductive adhesive layer described in the previous embodiment may be excluded.

The plurality of semiconductor light emitting device packages 1050 include a plurality of semiconductor light emitting devices 1051 , 1052 , 1053 , a conversion layer 1080 , a first insulating layer 1091 , and a second insulating layer 1092 .

Each of the plurality of semiconductor light emitting devices 1051, 1052, and 1053 is mainly made of gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together to emit blue light. can be implemented.

For this example, the plurality of semiconductor light emitting devices 1050 may be gallium nitride thin films formed in various layers, such as n-Gan, p-Gan, AlGaN, and InGan. However, the present invention is not necessarily limited thereto, and the plurality of semiconductor light emitting devices 1050 may be implemented as light emitting devices emitting green light.

As a more specific example, the semiconductor light emitting device 1050 may be a flip chip type light emitting device. The semiconductor light emitting device 1050 includes a first conductivity type electrode 1156 , a first conductivity type semiconductor layer 1155 on which the first conductivity type electrode 1156 is formed, and a first conductivity type semiconductor layer 1155 formed on the first conductivity type semiconductor layer 1155 . The active layer 1154 , the second conductivity type semiconductor layer 1153 formed on the active layer 1154 , and the second conductivity type electrode 1156 spaced apart from the first conductivity type electrode 1156 in the horizontal direction on the second conductivity type semiconductor layer 1153 . A type electrode 1152 is included. In this case, the first conductive electrode 1156 and the first conductive semiconductor layer 1155 may be a p-type electrode and a p-type semiconductor layer, and the second conductive electrode 1152 and the second conductive semiconductor layer 1152 . The type semiconductor layer 1153 may be an n-type electrode and an n-type semiconductor layer. Also, the active layer 1154 may be formed between the p-type semiconductor layer and the n-type semiconductor layer.

However, an undoped semiconductor layer may be formed on the upper surface of the n-type semiconductor layer, and in this case, the upper surface of the undoped semiconductor layer furthest from the substrate is the semiconductor light emitting device. It can be an exit surface. Furthermore, the undoped semiconductor layer may be undoped gallium nitride, and the upper surface may be etched in the form of moth-eye to reduce reflectance. As described above, index matching for minimizing light refraction may be formed in the semiconductor light emitting device.

As shown, the plurality of semiconductor light emitting devices 1051 , 1052 , and 1053 constitute three sub-pixels, and these are combined to constitute one RGB pixel. That is, the plurality of semiconductor light emitting devices 1051 , 1052 , and 1053 form a red sub-pixel RSP, a green sub-pixel GSP, and a blue sub-pixel BSP, respectively. In this case, the semiconductor light emitting devices 1051 and 1052 corresponding to at least one of the red sub-pixel RSP and the green sub-pixel GSP include the semiconductor light emitting device 1053 corresponding to the blue sub-pixel BSP, and They may have different light emitting areas.

For example, the plurality of semiconductor light emitting devices are coupled to the first insulating layer 1091 to form a single semiconductor light emitting device package 1050 , a first semiconductor light emitting device 1051 and a second semiconductor light emitting device 1052 . ) and a third semiconductor light emitting device 1053 . Only the first semiconductor light emitting device 1051 , the second semiconductor light emitting device 1052 , and the third semiconductor light emitting device 1053 are provided in one package, and these may be blue semiconductor light emitting devices having different light emitting areas.

More specifically, the first semiconductor light emitting device 1051 , the second semiconductor light emitting device 1052 , and the third semiconductor light emitting device 1053 are the red sub-pixel RSP, the green sub-pixel GSP, and the blue sub-pixel (BSP), respectively.

Meanwhile, the semiconductor light emitting device package 1050 may include a conversion layer 1080 disposed to cover the plurality of semiconductor light emitting devices 1051 , 1052 , and 1053 . For example, the semiconductor light emitting devices are blue semiconductor light emitting devices that emit blue (B) light, and the conversion layer 1080 converts the blue (B) light into colors such as yellow, white, red, and green. carry out In this case, the colors converted in each pixel may be different from each other. As an example, it is also possible to convert blue light into yellow in a green pixel, and convert blue light into a wavelength in which red and yellow are mixed in a red pixel.

As shown, the conversion layer 1080 includes a plurality of phosphor units 1081 and 1082 for converting a wavelength of light. In this case, a barrier rib 1084 may be formed between the plurality of phosphor units 1081 and 1082 .

For example, the plurality of phosphor parts 1081 and 1082 may include a first phosphor part 2081 disposed at a position forming a red pixel and a second phosphor part 1082 disposed at a position forming a green pixel. can In this case, in each of the first phosphor part 1081 and the second phosphor part 1082 , a red phosphor capable of converting the blue light of the blue semiconductor light emitting devices 1051 and 1052 into red light or green light and a green light A phosphor may be provided. In this case, a light-transmitting material 1083 that does not convert a color may be disposed at a position constituting the blue pixel. The light-transmitting material 1083 is a material having high transmittance in the visible ray region, and for example, an epoxy-based photoresist (PR), polydimethylsiloxane (PDMS), or resin may be used.

As another example, the first phosphor part 1081 and the second phosphor part 1082 may be provided with a yellow phosphor capable of converting blue light from the blue semiconductor light emitting devices 1051 and 1052 into yellow light or white light. have. In this case, yellow light or white light may be converted into red, green, and blue while passing through the color filter.

Meanwhile, the plurality of phosphor units 1081 and 1082 may be partitioned by a partition wall 1084 . To this end, each of the plurality of semiconductor light emitting device packages may include a barrier rib 1084 . The barrier rib 1084 may serve to separate individual sub-pixels from each other, and may be disposed between the semiconductor light emitting devices.

In addition, the barrier rib 1084 may have a structure in which a non-conductive epoxy having high hardness is filled in the reflective film. In this case, the reflective film may be an aluminum reflective film deposited on both edges of the barrier rib.

As described above, in this example, the conversion layer 1080 and the barrier rib 1084 are combined with the semiconductor light emitting device to realize red, green, and blue unit pixels.

Meanwhile, although not shown, a color filter (not shown) may be disposed to cover the conversion layer 1080 . see. Specifically, the color filter and the conversion layer 1080 may be coupled by an adhesive layer (not shown). For example, as the adhesive layer is disposed between the color filter and the conversion layer 1080 , the color filter may be attached to the conversion layer 1080 . In this case, the color filter selectively transmits light to realize red, green, and blue colors.

In the sub-pixels implemented by the above structure, a common wiring 1157 connected to the first conductive electrodes 1152 of the plurality of semiconductor light emitting devices may be disposed on the first insulating layer 1091 , respectively. have. The common wiring 1157 may constitute a single p-type electrode by interconnecting the P electrodes of each diode. When a voltage is applied to any one p-type electrode through the common wiring 1157, the same voltage may be formed in the other two p-type electrodes.

However, the present invention is not necessarily limited thereto. For example, the common wiring 1157 may be configured as a single n-type electrode by interconnecting the n-type electrodes of each diode on the contrary.

In this case, the first insulating layer 1091 may constitute an interposer, and the common wiring 1157 may include gold (Au) or copper (copper), which is a metal having a very low specific resistance. can In addition, the common wiring 1157 may be formed of a metal having a relatively good resistivity, such as nickel or aluminum, or an alloy thereof. The first insulating layer 1091 is made of a non-conductive epoxy resin-based material with high curability, and may also be formed of other polymer materials.

Meanwhile, as illustrated, the sub-pixels are supported by the second insulating layer 1092 . More specifically, the second insulating layer 1092 overlaps the first insulating layer 1091 and includes a plurality of through electrodes TSV1 , TSV2 , TSV3 , and TSV4 electrically connected to the plurality of semiconductor light emitting devices. ) is provided. The second insulating layer 1092 may be formed of the same material as the first insulating layer 1091 and may serve as an interposer. Accordingly, the interposer includes a common wiring 1157 commonly connected to each p-type electrode of the first semiconductor light emitting device 1051 , the second semiconductor light emitting device 1052 , and the third semiconductor light emitting device 1053 . It may be composed of a secondary structure (a first insulating layer) and a secondary structure (a second insulator) including a vertical conductive via.

A plurality of the through electrodes TSV1 , TSV2 , TSV3 , and TSV4 may be provided to correspond to each semiconductor light emitting device. A first through electrode TSV1, a second through electrode TSV2 and A third through electrode TSV3 may be disposed.

Any one of the plurality of through electrodes may be electrically connected to the common wiring, and the rest of the plurality of through electrodes may be electrically connected to second conductivity-type electrodes of the plurality of semiconductor light emitting devices, respectively. For example, the first through electrode TSV1 , the second through electrode TSV2 , and the third through electrode TSV3 are the first semiconductor light emitting device 1051 , the second semiconductor light emitting device 1052 and the third It may be electrically connected to the second conductive electrode of the semiconductor light emitting device 1053 . For the connection, a connection pad 1094 may be disposed on one side of the support substrate to cover the first through electrode TSV1 , the second through electrode TSV2 , and the third through electrode TSV3 .

Meanwhile, on the support substrate, a fourth through electrode TSV4 electrically connected to the common wiring 1157 of the first semiconductor light emitting device 1051 , the second semiconductor light emitting device 1052 , and the third semiconductor light emitting device 1053 . ) may be provided.

As the common wiring 1157 extends to the fourth through electrode TSV4 , the first of the first semiconductor light emitting device 1051 , the second semiconductor light emitting device 1052 , and the third semiconductor light emitting device 1053 . The conductive electrode is electrically connected to the other side of the support substrate using the fourth through electrode TSV4 as a common through electrode.

The first insulating layer 1091 is disposed on an upper surface of the second insulating layer 1092 , and a plurality of electrode pads 1097 electrically connected to the through electrodes on a lower surface of the second insulating layer 1092 . ) can be placed. For example, electrode pads 1097 may be respectively disposed below the first through electrode TSV1 , the second through electrode TSV2 , the third through electrode TSV3 , and the fourth through electrode TSV4 . have.

According to the structure described above, the through electrodes TSV1 , TSV2 , TSV3 , and TSV4 have one through electrode TSV4 connected to the common wiring 1157 and the second conductivity of the plurality of semiconductor light emitting devices. A plurality of through electrodes TSV1 , TSV2 , and TSV3 respectively connected to the type electrodes are provided. In addition, the common wiring 1157 is covered by the second insulating layer 1092 . The semiconductor light emitting device package uses the interposers 1091 and 1092 as unit substrates to form one pixel, and the first insulating layer 1091 includes the second insulating layer 1092 and the conversion layer 1080. It is disposed between the to form a built-in interposer.

In this case, a low melting point portion 1097 made of a material having a lower melting point than the wiring electrodes 1020 and 1040 of the substrate 1010 is disposed between the substrate 1010 and the semiconductor light emitting device package 1050 . can As a specific example, a low melting point portion 1098 is disposed between the wiring electrodes 1020 and 1040 of the substrate 1010 and the electrode pads 1097 of the second insulating layer 1092 to realize electrical coupling. .

The low melting point portion 1098 may be plated on the wiring electrode with a solder material. The solder material may be, for example, at least one of Sb, Pd, Ag, Au, and Bi. In this case, solder may be deposited on the wiring electrode, and soldering may be performed using thermal energy.

As illustrated, the substrate 1010 may have a larger area than the second insulating layer 1092 . A plurality of semiconductor light emitting device packages are disposed on the substrate 1010 at predetermined intervals, and thus a display device may be realized. An empty space may be formed between the semiconductor light emitting device packages as illustrated, but the present invention is not limited thereto. For example, the empty space may be filled with an insulating material or the like, or the unit substrates may be arranged to contact each other so that there is no empty space.

According to the structure described above, the interposer element of the microstructure can be manufactured by integrated production technology such as general photolithography, thin film deposition and etching process technology, and thus the interposer structure in a high-density stacking method It is easy to extend

The display device using the semiconductor light emitting device described above is not limited to the configuration and method of the above-described embodiments, but all or part of each embodiment may be selectively combined so that various modifications may be made. may be

Claims (10)

a plurality of semiconductor light emitting device packages; and
and a substrate to which the plurality of semiconductor light emitting device packages are coupled;
Each of the plurality of semiconductor light emitting device packages,
a plurality of semiconductor light emitting devices;
a first insulating layer to which the plurality of semiconductor light emitting devices are coupled; and
a second insulating layer overlapping the first insulating layer and having a plurality of through electrodes electrically connected to the plurality of semiconductor light emitting devices;
The first insulating layer is disposed on the upper surface of the second insulating layer,
A common wiring connected to the first conductivity-type electrodes of the plurality of semiconductor light emitting devices is disposed on the first insulating layer,
The display device, characterized in that the common wiring is covered by the second insulating layer. delete The method of claim 1,
Any one of the plurality of through electrodes is electrically connected to the common wiring. 4. The method of claim 3,
The rest of the plurality of through electrodes are electrically connected to second conductive electrodes of the plurality of semiconductor light emitting devices, respectively. delete The method of claim 1,
A plurality of electrode pads electrically connected to the through electrodes are disposed on a lower surface of the second insulating layer. The method of claim 1,
and a first semiconductor light emitting device, a second semiconductor light emitting device, and a third semiconductor light emitting device, wherein the plurality of semiconductor light emitting devices are coupled to the first insulating layer to form one semiconductor light emitting device package. 8. The method of claim 7,
Converting the color of light emitted from at least one of the first semiconductor light emitting device, the second semiconductor light emitting device and the third semiconductor light emitting device so that the plurality of semiconductor light emitting devices form a red sub-pixel, a green sub-pixel, and a blue sub-pixel A display device further comprising a conversion layer to. 9. The method of claim 8,
and the first insulating layer is disposed between the second insulating layer and the conversion layer to form a built-in interposer. The method of claim 1,
The display device, characterized in that the first insulating layer and the second insulating layer is formed of the same material.

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