KR101761209B1 - Display device using semiconductor light emitting device - Google Patents

Abstract

The present invention relates to a display device, and more particularly, to a display device, which is adapted to transmit a scan driving signal, includes a plurality of scan lines arranged in parallel to each other, and a plurality of scan lines crossing the plurality of scan lines And a unit pixel portion having a red output portion, a green output portion, and a blue output portion for outputting red, green, and blue lights, respectively, and the plurality of data lines and the plurality of data lines And three rows of scan lines arranged in the unit pixel portion may be connected to each other so that the scan driving signals are simultaneously applied.

Description

Technical Field [0001] The present invention relates to a display device using a semiconductor light-

The present invention relates to a display device, and more particularly, to a flexible display device using a semiconductor light emitting device.

 In recent years, display devices having excellent characteristics such as a thin shape and a flexible shape in the field of display technology have been developed. On the other hand, major displays that are commercialized today are represented by LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes).

However, in the case of LCD, there is a problem that the reaction time is not fast and the implementation of flexible is difficult. In the case of AMOLED, there is a weak point that the lifetime is short, the mass production yield is not good, and the degree of flexible is weak.

Light emitting diodes (LEDs) are well-known semiconductor light emitting devices that convert current into light. In 1962, red LEDs using GaAsP compound semiconductors were commercialized, Has been used as a light source for a display image of an electronic device including a communication device. Accordingly, a method of solving the above problems by implementing a flexible display using the semiconductor light emitting device can be presented.

Further, in a flexible display using a semiconductor light emitting element, a pixel color is realized by combining red, green, and blue in a unit pixel. In this case, the structure of the connection wiring improving the brightness of light in the unit pixel can be conceived.

It is an object of the present invention to provide a structure for improving optical performance in a display device in which a semiconductor light emitting device is implemented as a unit pixel.

Another object of the present invention is to realize a display device using a semiconductor light emitting device capable of multi-scanning.

A display device according to the present invention includes a plurality of scan lines arranged to transmit a scan driving signal and arranged in parallel with each other, a plurality of data lines arranged to cross the plurality of scan lines to transmit a data drive signal, And a unit pixel section having a red output section, a green output section and a blue output section for outputting red, green and blue lights, respectively, and the plurality of scan lines and the plurality of data lines are arranged in the unit pixel section And three rows of scan lines arranged in the unit pixel portion are connected to each other so that the scan driving signals are simultaneously applied.

In an exemplary embodiment, at least one of three data lines arranged in the unit pixel portion has a horizontal portion parallel to the scan line. A semiconductor light emitting device for emitting light may be disposed on the horizontal portion.

In one embodiment of the present invention, the three data lines may include a first data line, a second data line and a third data line sequentially arranged, and the horizontal portions of the first data line and the third data line may include And may protrude toward the second data line on the first data line and the third data line.

In an exemplary embodiment, vertical portions extending in a direction perpendicular to the scan lines may be disposed at both ends of a horizontal portion of the second data line. The horizontal portions of the first data line and the third data line may be formed to be symmetrical with respect to the horizontal portion of the second data line.

In an exemplary embodiment, the three rows of scan lines may include a first scan line, a second scan line, and a third scan line that are sequentially arranged, and the unit pixel portion may include the first scan line, the second scan line, The first semiconductor light emitting device, the second semiconductor light emitting device, and the third semiconductor light emitting device, which are connected to the scan lines, respectively, and to which the scan driving signals are simultaneously applied, are disposed.

In an embodiment, the first semiconductor light emitting device, the second semiconductor light emitting device, and the third semiconductor light emitting device are connected to the first data line, the second data line and the third data line, respectively.

The first scan line, the second scan line, and the third scan line may have a red output unit, a green output unit, and a blue output unit, respectively, such that a plurality of unit pixel portions are sequentially formed along the three scan lines. Can be repeatedly arranged.

In an embodiment, the red output section and the green output section may include a semiconductor light emitting element; And a phosphor layer for converting light emitted from the semiconductor light emitting device into another color. The phosphor layer may be formed to extend along the scan line.

In an exemplary embodiment, the red output unit, the green output unit, and the blue output unit each include a red semiconductor light emitting device, a green semiconductor light emitting device, and a blue semiconductor light emitting device.

In the display device according to the present invention, since the scan lines and the data lines are arranged in three rows in the unit pixel portion, three columns can be scanned. Thus, the brightness of the display device can be improved.

In addition, according to the present invention, since the data lines have a horizontal portion parallel to the scan lines, it is possible to arrange the data lines in three columns in the unit pixel portion regardless of the fixed size.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.
Fig. 2 is a partially enlarged view of part A of Fig. 1, and Figs. 3a and 3b are cross-sectional views taken along line BB and CC of Fig.
4 is a conceptual diagram showing a flip chip type semiconductor light emitting device of FIG.
FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.
6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.
7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention.
8 is a cross-sectional view taken along line DD of FIG.
9 is a conceptual diagram showing a vertical semiconductor light emitting device of FIG.
10 is a perspective view of a display device to which a wiring structure of a new structure is applied.
Fig. 11A is a cross-sectional view taken along the line EE of Fig. 10, and Fig. 11B is a cross-sectional view taken along the line FF of Fig.
12A and 12B are conceptual diagrams showing the wiring connection structure of FIG.
13A to 13C are conceptual diagrams showing various forms of implementing colors in connection with a connection wiring structure of a new structure.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals are used to designate identical or similar elements, and redundant description thereof will be omitted. The suffix "module" and " part "for the components used in the following description are given or mixed in consideration of ease of specification, and do not have their own meaning or role. In the following description of the embodiments of the present invention, a detailed description of related arts will be omitted when it is determined that the gist of the embodiments disclosed herein may be blurred. In addition, it should be noted that the attached drawings are only for easy understanding of the embodiments disclosed in the present specification, and should not be construed as limiting the technical idea disclosed in the present specification by the attached drawings.

It is also to be understood that when an element such as a layer, region or substrate is referred to as being present on another element "on," it is understood that it may be directly on the other element or there may be an intermediate element in between There will be.

The display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation device, a slate PC, , A Tablet PC, an Ultra Book, a digital TV, a desktop computer, and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiments described herein may be applied to a device capable of being displayed, even in the form of a new product to be developed in the future.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.

According to the illustrated example, the information processed in the control unit of the display device 100 may be displayed using a flexible display.

The flexible display includes a display that can be bent, twistable, collapsible, and curlable, which can be bent by an external force. For example, a flexible display can be a display made on a thin, flexible substrate that can be bent, bent, folded or rolled like paper while maintaining the display characteristics of conventional flat panel displays.

In a state where the flexible display is not bent (for example, a state having an infinite radius of curvature, hereinafter referred to as a first state), the display area of the flexible display is flat. In the first state, the display area may be a curved surface in a state of being bent by an external force (for example, a state having a finite radius of curvature, hereinafter referred to as a second state). As shown in the figure, the information displayed in the second state may be time information output on the curved surface. Such visual information is realized by independently controlling the emission of a sub-pixel arranged in a matrix form. The unit pixel means a minimum unit for implementing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as one type of semiconductor light emitting device for converting a current into light. The light emitting diode is formed in a small size, so that it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in detail with reference to the drawings.

FIG. 2 is a partial enlarged view of a portion A of FIG. 1, FIGS. 3 A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2, FIG. 4 is a conceptual view of a flip chip type semiconductor light emitting device of FIG. FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.

Referring to FIGS. 2, 3A and 3B, a display device 100 using a passive matrix (PM) semiconductor light emitting device as a display device 100 using a semiconductor light emitting device is illustrated. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 100 includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and a plurality of semiconductor light emitting devices 150.

The substrate 110 may be a flexible substrate. For example, to implement a flexible display device, the substrate 110 may comprise glass or polyimide (PI). In addition, any insulating material such as PEN (polyethylene naphthalate) and PET (polyethylene terephthalate) may be used as long as it is insulating and flexible. In addition, the substrate 110 may be either a transparent material or an opaque material.

The substrate 110 may be a wiring substrate on which the first electrode 120 is disposed, so that the first electrode 120 may be positioned on the substrate 110.

The insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is located and the auxiliary electrode 170 may be disposed on the insulating layer 160. In this case, a state in which the insulating layer 160 is laminated on the substrate 110 may be one wiring substrate. More specifically, the insulating layer 160 is formed of a flexible material such as polyimide (PI), polyimide (PET), or PEN, and is integrally formed with the substrate 110 to form a single substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150 and is disposed on the insulating layer 160 and corresponds to the position of the first electrode 120. For example, the auxiliary electrode 170 may be in the form of a dot and may be electrically connected to the first electrode 120 by an electrode hole 171 passing through the insulating layer 160. The electrode hole 171 may be formed by filling a via hole with a conductive material.

Referring to these drawings, the conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not limited thereto. For example, a layer having a specific function may be formed between the insulating layer 160 and the conductive adhesive layer 130, or a structure in which the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160 It is also possible. In the structure in which the conductive adhesive layer 130 is disposed on the substrate 110, the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity. To this end, the conductive adhesive layer 130 may be mixed with a substance having conductivity and a substance having adhesiveness. Also, the conductive adhesive layer 130 has ductility, thereby enabling the flexible function in the display device.

As an example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 may be formed as a layer having electrical insulation in the horizontal X-Y direction while permitting electrical interconnection in the Z direction passing through the thickness. Accordingly, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (hereinafter, referred to as a conductive adhesive layer).

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member. When heat and pressure are applied, only a specific part of the anisotropic conductive film has conductivity due to the anisotropic conductive medium. Hereinafter, the anisotropic conductive film is described as being subjected to heat and pressure, but other methods may be used to partially conduct the anisotropic conductive film. In this method, for example, either the heat or the pressure may be applied, or UV curing may be performed.

In addition, the anisotropic conduction medium can be, for example, a conductive ball or a conductive particle. According to the example, in the present example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member. When heat and pressure are applied, only specific portions are conductive by the conductive balls. The anisotropic conductive film may be a state in which a plurality of particles coated with an insulating film made of a polymer material are contained in the core of the conductive material. In this case, the insulating film is broken by heat and pressure, . At this time, the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and the electrical connection in the Z-axis direction is partially formed by the height difference of the mating member adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state in which a plurality of particles coated with a conductive material are contained in the insulating core. In this case, the conductive material is deformed (pressed) to the portion where the heat and the pressure are applied, so that the conductive material becomes conductive in the thickness direction of the film. As another example, it is possible that the conductive material penetrates the insulating base member in the Z-axis direction and has conductivity in the thickness direction of the film. In this case, the conductive material may have a pointed end.

According to the present invention, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of an insulating base member. More specifically, the insulating base member is formed of a material having adhesiveness, and the conductive ball is concentrated on the bottom portion of the insulating base member, and is deformed together with the conductive ball when heat and pressure are applied to the base member So that they have conductivity in the vertical direction.

However, the present invention is not limited thereto. The anisotropic conductive film may be formed by randomly mixing conductive balls into an insulating base member or by forming a plurality of layers in which a conductive ball is placed in a double- ACF) are all available.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which a conductive ball is mixed with an insulating and adhesive base material. In addition, solutions containing conductive particles can be solutions in the form of conductive particles or nanoparticles.

Referring again to FIG. 5, the second electrode 140 is located in the insulating layer 160, away from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed.

After the conductive adhesive layer 130 is formed in a state where the auxiliary electrode 170 and the second electrode 140 are positioned in the insulating layer 160, the semiconductor light emitting device 150 is connected to the semiconductor light emitting device 150 in a flip chip form The semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.

Referring to FIG. 4, the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type semiconductor layer 155 in which a p-type electrode 156, a p-type electrode 156 are formed, an active layer 154 formed on the p-type semiconductor layer 155, And an n-type electrode 152 disposed on the n-type semiconductor layer 153 and the p-type electrode 156 on the n-type semiconductor layer 153 and 154 in the horizontal direction. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 by the conductive adhesive layer 130, and the n-type electrode 152 may be electrically connected to the second electrode 140.

Referring again to FIGS. 2, 3A and 3B, the auxiliary electrode 170 is elongated in one direction, and one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150. For example, the p-type electrodes of the right and left semiconductor light emitting elements may be electrically connected to one auxiliary electrode around the auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 by heat and pressure, and the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 through the p- And only the portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 has conductivity and the semiconductor light emitting device does not have a conductive property because the semiconductor light emitting device is not press- The conductive adhesive layer 130 not only couples the semiconductor light emitting device 150 and the auxiliary electrode 170 and the semiconductor light emitting device 150 and the second electrode 140 but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitute a light emitting element array, and the phosphor layer 180 is formed in the light emitting element array.

The light emitting element array may include a plurality of semiconductor light emitting elements having different brightness values. Each of the semiconductor light emitting devices 150 constitutes a unit pixel and is electrically connected to the first electrode 120. For example, the first electrodes 120 may be a plurality of semiconductor light emitting devices, and the semiconductor light emitting devices may be electrically connected to any one of the plurality of first electrodes.

Also, since the semiconductor light emitting devices are connected in a flip chip form, the semiconductor light emitting devices grown on the transparent dielectric substrate can be used. The semiconductor light emitting devices may be, for example, a nitride semiconductor light emitting device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size.

According to the structure, the barrier ribs 190 may be formed between the semiconductor light emitting devices 150. In this case, the barrier ribs 190 may separate the individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130. For example, by inserting the semiconductor light emitting device 150 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier 190 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, the barrier ribs 190 may be provided separately from the reflective barrier ribs. In this case, the barrier rib 190 may include a black or white insulation depending on the purpose of the display device. When a barrier of a white insulator is used, an effect of enhancing reflectivity may be obtained. When a barrier of a black insulator is used, a contrast characteristic may be increased while having a reflection characteristic.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 180 converts the blue (B) light into the color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting an individual pixel.

That is, a red phosphor 181 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 151 at a position forming a red unit pixel, A green phosphor 182 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 151. [ In addition, only the blue semiconductor light emitting element 151 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel. More specifically, phosphors of one color may be stacked along each line of the first electrode 120. Accordingly, one line in the first electrode 120 may be an electrode for controlling one color. In other words, red (R), green (G), and blue (B) may be arranged in order along the second electrode 140, thereby realizing a unit pixel.

(R), green (G), and blue (B) unit pixels may be implemented by combining the semiconductor light emitting device 150 and the quantum dot QD instead of the fluorescent material. have.

In addition, a black matrix 191 may be disposed between each of the phosphor layers to improve contrast. That is, the black matrix 191 can improve the contrast of light and dark.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied.

5A, each of the semiconductor light emitting devices 150 includes gallium nitride (GaN), indium (In) and / or aluminum (Al) are added together to form a high output light Device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a unit pixel (sub-pixel), respectively. For example, red, green, and blue semiconductor light emitting elements R, G, and B are alternately arranged, and red, green, and blue unit pixels Form a single pixel, through which a full color display can be implemented.

Referring to FIG. 5B, the semiconductor light emitting device may include a white light emitting device W having a yellow phosphor layer for each individual device. In this case, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light emitting element W to form a unit pixel. Further, a unit pixel can be formed by using a color filter in which red, green, and blue are repeated on the white light emitting element W.

Referring to FIG. 5C, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the ultraviolet light emitting element UV. As described above, the semiconductor light emitting device can be used not only for visible light but also for ultraviolet (UV), and can be extended to a form of a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of the upper phosphor .

The semiconductor light emitting device 150 is disposed on the conductive adhesive layer 130 and constitutes a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 150 may be 80 mu m or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

Also, even if a square semiconductor light emitting device 150 having a length of 10 m on one side is used as a unit pixel, sufficient brightness for forming a display device appears. Accordingly, when the unit pixel is a rectangular pixel having a side of 600 mu m and the other side of 300 mu m as an example, the distance of the semiconductor light emitting element becomes relatively large. Accordingly, in such a case, it becomes possible to implement a flexible display device having HD picture quality.

The display device using the semiconductor light emitting device described above can be manufactured by a novel manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG.

6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

The conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed. A first electrode 120, an auxiliary electrode 170, and a second electrode 140 are formed on the wiring substrate, and the insulating layer 160 is formed on the first substrate 110 to form a single substrate (or a wiring substrate) . In this case, the first electrode 120 and the second electrode 140 may be arranged in mutually orthogonal directions. In addition, the first substrate 110 and the insulating layer 160 may include glass or polyimide (PI), respectively, in order to implement a flexible display device.

The conductive adhesive layer 130 may be formed, for example, by an anisotropic conductive film, and an anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is disposed.

A second substrate 112 corresponding to the positions of the auxiliary electrode 170 and the second electrodes 140 and having a plurality of semiconductor light emitting elements 150 constituting individual pixels is disposed on the semiconductor light emitting element 150 Are arranged so as to face the auxiliary electrode 170 and the second electrode 140.

In this case, the second substrate 112 is a growth substrate for growing the semiconductor light emitting device 150, and may be a spire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in units of wafers, the semiconductor light emitting device can be effectively used in a display device by having an interval and a size at which a display device can be formed.

Then, the wiring substrate and the second substrate 112 are thermally bonded. For example, the wiring board and the second substrate 112 may be thermocompression-bonded using an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermocompression bonding. Only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity due to the characteristics of the anisotropic conductive film having conductivity by thermocompression, The device 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and partition walls may be formed between the semiconductor light emitting devices 150.

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO).

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating a wiring substrate on which the semiconductor light emitting device 150 is coupled with silicon oxide (SiOx) or the like.

Further, the method may further include forming a phosphor layer on one surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red phosphor or a green phosphor for converting the blue (B) A layer can be formed on one surface of the device.

The manufacturing method and structure of the display device using the semiconductor light emitting device described above can be modified into various forms. For example, a vertical semiconductor light emitting device may be applied to the display device described above. Hereinafter, the vertical structure will be described with reference to Figs. 5 and 6. Fig.

In the modifications or embodiments described below, the same or similar reference numerals are given to the same or similar components as those of the previous example, and the description is replaced with the first explanation.

8 is a cross-sectional view taken along the line DD of FIG. 7, and FIG. 9 is a conceptual view illustrating a vertical semiconductor light emitting device of FIG. 8. FIG. 7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, to be.

Referring to these drawings, the display device may be a display device using a passive matrix (PM) vertical semiconductor light emitting device.

The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and a plurality of semiconductor light emitting devices 250.

The substrate 210 is a wiring substrate on which the first electrode 220 is disposed. The substrate 210 may include polyimide (PI) to implement a flexible display device. In addition, any insulating and flexible material may be used.

The first electrode 220 is disposed on the substrate 210 and may be formed as a long bar electrode in one direction. The first electrode 220 may serve as a data electrode.

A conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is located. The conductive adhesive layer 230 may be formed of an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing a conductive particle, or the like, as in a display device using a flip chip type light emitting device. ) And the like. However, the present embodiment also exemplifies the case where the conductive adhesive layer 230 is realized by the anisotropic conductive film.

If the semiconductor light emitting device 250 is connected to the semiconductor light emitting device 250 by applying heat and pressure after the anisotropic conductive film is positioned in a state where the first electrode 220 is positioned on the substrate 210, And is electrically connected to the electrode 220. In this case, the semiconductor light emitting device 250 may be disposed on the first electrode 220.

As described above, the electrical connection is generated because heat and pressure are applied to the anisotropic conductive film to partially conduct in the thickness direction. Therefore, in the anisotropic conductive film, it is divided into a portion 231 having conductivity in the thickness direction and a portion 232 having no conductivity.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 realizes electrical connection as well as mechanical bonding between the semiconductor light emitting element 250 and the first electrode 220.

Thus, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 250 may be 80 μm or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 electrically connected to the vertical semiconductor light emitting device 250 are disposed between the vertical semiconductor light emitting devices in a direction crossing the longitudinal direction of the first electrode 220.

9, the vertical type semiconductor light emitting device includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255 An n-type semiconductor layer 253 formed on the active layer 254 and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom may be electrically connected to the first electrode 220 by the conductive adhesive layer 230, and the n-type electrode 252 located at the top may be electrically connected to the second electrode 240 As shown in FIG. Since the vertical semiconductor light emitting device 250 can arrange the electrodes up and down, it has a great advantage that the chip size can be reduced.

Referring to FIG. 8 again, a phosphor layer 280 may be formed on one side of the semiconductor light emitting device 250. For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and a phosphor layer 280 for converting the blue (B) . In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 251 at a position forming a red unit pixel, A green phosphor 282 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 251. In addition, only the blue semiconductor light emitting element 251 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied to a display device to which a flip chip type light emitting device is applied, as described above.

The second electrode 240 is located between the semiconductor light emitting devices 250 and electrically connected to the semiconductor light emitting devices 250. For example, the semiconductor light emitting devices 250 may be disposed in a plurality of rows, and the second electrode 240 may be disposed between the columns of the semiconductor light emitting devices 250.

The second electrode 240 may be positioned between the semiconductor light emitting devices 250 because the distance between the semiconductor light emitting devices 250 forming the individual pixels is sufficiently large.

The second electrode 240 may be formed as a long bar-shaped electrode in one direction and may be disposed in a direction perpendicular to the first electrode.

The second electrode 240 and the semiconductor light emitting device 250 may be electrically connected by a connection electrode protruding from the second electrode 240. More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a part of the ohmic electrode by printing or vapor deposition. Accordingly, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 can be electrically connected.

According to the example, the second electrode 240 may be disposed on the conductive adhesive layer 230. A transparent insulating layer (not shown) containing silicon oxide (SiOx) or the like may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. In addition, the second electrode 240 may be formed spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as ITO (Indium Tin Oxide) is used for positioning the second electrode 240 on the semiconductor light emitting device 250, the problem that the ITO material has poor adhesion with the n-type semiconductor layer have. Accordingly, the present invention has an advantage in that the second electrode 240 is positioned between the semiconductor light emitting devices 250, so that a transparent electrode such as ITO is not used. Therefore, the light extraction efficiency can be improved by using a conductive material having good adhesiveness with the n-type semiconductor layer as a horizontal electrode without being bound by transparent material selection.

According to the structure, the barrier ribs 290 may be positioned between the semiconductor light emitting devices 250. That is, the barrier ribs 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 forming the individual pixels. In this case, the barrier ribs 290 may separate the individual unit pixels from each other, and may be formed integrally with the conductive adhesive layer 230. For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier ribs 290 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, as the partition 190, a reflective barrier may be separately provided. The barrier ribs 290 may include black or white insulators depending on the purpose of the display device.

If the second electrode 240 is directly disposed on the conductive adhesive layer 230 between the semiconductor light emitting devices 250, the barrier ribs 290 may be formed between the vertical semiconductor light emitting device 250 and the second electrode 240 As shown in FIG. Therefore, individual unit pixels can be formed with a small size by using the semiconductor light emitting device 250, and the distance between the semiconductor light emitting device 250 can be relatively large enough so that the second electrode 240 can be electrically connected to the semiconductor light emitting device 250 ), And it is possible to realize a flexible display device having HD picture quality.

In addition, according to the present invention, a black matrix 291 may be disposed between the respective phosphors to improve the contrast. That is, this black matrix 291 can improve the contrast of light and dark.

As described above, the semiconductor light emitting device 250 is disposed on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. Therefore, a full color display in which red (R), green (G), and blue (B) unit pixels form one pixel can be realized by the semiconductor light emitting device.

In the display device of the present invention described above, the semiconductor light emitting device is electrically connected to the first electrodes 120 and 220 and the second electrodes 140 and 240 (see FIGS. 3A and 8). In this case, the first electrodes 120 and 220 may be data lines for transmitting data driving signals, and the second electrodes 140 and 240 may be scan lines for transmitting scan driving signals. As described above, one line in the data lines can be an electrode that controls a single color. That is, red (R), green (G), and blue (B) may be sequentially arranged along one scan line, thereby realizing a unit pixel.

Accordingly, one scan line and three columns of data lines are connected in a unit pixel portion that emits red, green, and blue light to emit a specific color. In this wiring connection structure, in a state in which one scan line is activated and the other is off, three data lines are selectively driven to control the corresponding cells in the unit pixel unit. As described above, in the passive matrix structure, when one scan line is activated and light is emitted, the remaining lines can not be driven, so that the brightness of light emitted by one line per unit time is limited. The present invention proposes a wiring connection structure capable of solving such a problem. Hereinafter, a display device to which such a new type of wiring connection structure is applied will be described in more detail.

10A is a cross-sectional view taken along line EE of FIG. 10, FIG. 11B is a cross-sectional view taken along line FF of FIG. 10, and FIGS. 12A and 12B Are schematic diagrams showing the wiring connection structure of Fig.

10, 11A, 11B, 11C, 12A and 12B, a display device 1000 using a passive matrix (PM) type semiconductor light emitting device as a display device 1000 using a semiconductor light emitting device, (1000). However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 1000 includes a substrate 1010, a first electrode 1020, a conductive adhesive layer 1030, a second electrode 1040, and a plurality of semiconductor light emitting devices 1050.

The substrate 1010 may be a wiring substrate and may include polyimide (PI) to implement a flexible display device. In addition, any insulating and flexible material may be used.

The insulating layer 1060 may be disposed on the substrate 1010 and the auxiliary electrode 1070 may be disposed on the insulating layer 1060. In this case, a state in which the insulating layer 1060 is laminated on the substrate 1010 may be a single wiring substrate. More specifically, the insulating layer 1060 may be formed integrally with the substrate 1010 by using a flexible material such as polyimide (PI), PET, PEN, or the like.

According to the illustration, the first electrode 1020 and the second electrode 1040 may each include a plurality of electrode lines. The first electrode 1020 may be formed as a long bar-shaped electrode in one direction on the insulating layer 1060. The first electrode 1020 serves as a data electrode and includes a plurality of data lines 1020a, 1020b, and 1020c arranged in parallel to each other.

In this case, the second electrode 1040 is connected to the auxiliary electrode 1070, extends to the substrate 1010 through the via hole, and is formed as a long bar-shaped electrode in one direction on the substrate 1010 . The second electrode 1040 is disposed in a direction crossing the longitudinal direction of the first electrode 1020. The second electrode 1040 is formed to serve as a gate electrode (scan electrode), and includes a plurality of scan lines 1040a, 1040b, and 1040c. The plurality of data lines 1020a, 1020b, and 1020c and the plurality of scan lines 1040a, 1040b, and 1040c are disposed to cross each other vertically.

The auxiliary electrode 1070 is an electrode that electrically connects the second electrode 1040 and the semiconductor light emitting device 1050 and is disposed on the insulating layer 1060 and is disposed corresponding to the position of the second electrode 1040. For example, the auxiliary electrode 1070 may be in the form of a dot and may be electrically connected to the second electrode 1040 by an electrode hole 1071 penetrating the insulating layer 1060. The electrode hole 1071 may be formed by filling a via hole with a conductive material.

Referring to these drawings, a conductive adhesive layer 1030 is formed on one surface of the insulating layer 1060, but the present invention is not limited thereto. For example, a structure in which a layer performing a specific function is formed between the insulating layer 1060 and the conductive adhesive layer 1030, or a structure in which the conductive adhesive layer 1030 is disposed on the substrate 1010 without the insulating layer 1060 It is also possible. In the structure in which the conductive adhesive layer 1030 is disposed on the substrate 1010, the conductive adhesive layer 1030 may serve as an insulating layer.

The conductive adhesive layer 1030 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing a conductive particle, or the like, as in a display device using a flip chip type light emitting device described above. solution or the like. However, the present embodiment also exemplifies the case where the conductive adhesive layer 1030 is realized by the anisotropic conductive film.

When the semiconductor light emitting device 1050 is connected to the first electrode 1020 and the second electrode 1040 by heat and pressure after the anisotropic conductive film is placed on the substrate 1010, Respectively. At this time, the second electrode 1040 is connected to the semiconductor light emitting device 1050 via the auxiliary electrode 1070.

In this example, a flip chip type light emitting device is shown as the semiconductor light emitting device 1050, but the present invention is not limited thereto, and various types of semiconductor light emitting devices can be applied.

The semiconductor light emitting device of this example includes a p-type semiconductor layer 1055 in which a p-type electrode 1056, a p-type electrode 1056 are formed, an active layer 1054 formed on the p-type semiconductor layer 1055, an active layer 1054, And an n-type electrode 1052 disposed on the n-type semiconductor layer 1053 and on the n-type semiconductor layer 1053 so as to be spaced apart from the p-type electrode 1056 in the horizontal direction. In this case, the n-type electrode 1052 may be electrically connected to the auxiliary electrode 1070 by the conductive adhesive layer 1030, and the p-type electrode 1056 may be electrically connected to the first electrode 1020.

In this case, the plurality of data lines 1020a, 1020b, and 1020c are electrically coupled to the p-type electrode of the semiconductor light emitting device to transmit a data driving signal, and the plurality of scan lines 1040a, 1040b, and 1040c And may be electrically connected to the n-type electrode of the semiconductor light emitting device to transmit the scan driving signal.

Meanwhile, according to the embodiment, a unit pixel portion 1090 including output portions 1091, 1092, and 1093 that emit light having a plurality of semiconductor light emitting elements and a phosphor layer are formed. As an example, the unit pixel portion 1090 includes a red output portion 1091, a green output portion 1092, and a blue output portion 1093 for outputting red, green, and blue lights, respectively. Each of the output units forms a sub-pixel, and the three sub-pixels form a unit pixel unit 1090.

More specifically, in the unit pixel portion 1090, at least three blue semiconductor light emitting elements 1050 are arranged, and two of them are provided with a red phosphor 1081 capable of converting blue light into red light and green light And a green phosphor 1082 may be stacked, respectively. Through this, a red output unit 1091 and a green output unit 1092 are implemented, respectively.

In addition, only the blue semiconductor light emitting element 1050 can be used for the blue output portion 1093 alone. In this case, the unit pixels of red (R), green (G), and blue (B) may form one unit pixel portion 1090. More specifically, phosphors of one color may be stacked along each scan line of the second electrode 1040.

Therefore, the phosphor layer is formed to extend along the scan line, and one line in the scan line may be an electrode for controlling one color. On the other hand, red (R), green (G), and blue (B) may be sequentially arranged along the first electrode 1020 and the data line, thereby realizing the unit pixel portion 1090.

However, the present invention is not limited thereto. Instead, the semiconductor light emitting device and the quantum dot QD may be combined to realize red (R), green (G), and blue (B) output units.

In order to improve the contrast of the phosphor layer 1080, the display device may further include a black matrix BM disposed between the phosphors. The black matrix BM may be formed in such a manner that a gap is formed between the phosphor dots and a black material fills the gap. Through this, the black matrix (BM) can absorb the external light reflection and improve the contrast of light and dark. This black matrix BM is located between the respective phosphor layers along the second electrode 1040 in the direction in which the phosphor layers 1080 are stacked.

A plurality of scan lines 1040a, 1040b and 1040c and a plurality of data lines 1020a, 1020b and 1020c are formed in a unit pixel portion 1090 The three rows of scan lines 1040a, 1040b, and 1040c arranged in the unit pixel portion 1090 are connected to each other so that the scan driving signals are simultaneously applied.

In this case, the three rows of scan lines 1040a, 1040b, and 1040c include a first scan line 1040a, a second scan line 1040b, and a third scan line 1040c that are sequentially arranged. In this case, the first scan line 1040a, the second scan line 1040b, and the third scan line 1040c are formed so that a plurality of unit pixel portions are sequentially formed along the three scan lines 1040a, 1040b, and 1040c. The red output section 1091, the green output section 1092, and the blue output section 1093 may be repeatedly arranged. In this example, only the red output portion 1091 is sequentially arranged in the first scan line 1040a, only the green output portion 1092 is sequentially arranged in the second scan line 1040b, Only the blue output unit 1093 may be continuously arranged in the display unit 1040c.

The three data lines 1020a, 1020b and 1020c arranged in the unit pixel portion 1090 are sequentially connected to the first data line 1020a, the second data line 1020b and the third data line 1020c ).

For example, one unit pixel portion 1090 is connected to the first scan line 1040a, the second scan line 1040b, and the third scan line 1040c, 1 semiconductor light emitting element 1050a, a second semiconductor light emitting element 1050b, and a third semiconductor light emitting element 1050c are disposed. The first semiconductor light emitting element 1050a, the second semiconductor light emitting element 1050b and the third semiconductor light emitting element 1050c included in one unit pixel portion 1090 are connected to the first data line 1020a, 2 data line 1020b and the third data line 1020c.

More specifically, referring to FIGS. 12A and 12B, the vertical electrode is a scan line, and scan lines of three sub-pixels are common to Scan1, Scan2, and Scan3. In order to increase the emission aperture ratio of the display, the scan lines are disposed between the sub-pixels

Referring to FIG. 12A, when Scan 1 is activated, it is possible to selectively scan and emit three columns of Data 1 to 27 at the same time, and when the time for activating Scan 1 is defined as unit time T, The time is 3T. If Scan1 is composed of one line, the time required to construct one screen will be 9T in total, so that according to the present invention, the time required to construct one screen is reduced, Can be doubled.

On the other hand, according to FIG. 12B, the data lines can be formed so that the area of each sub pixel in the unit pixel portion is further increased. More specifically, when the data lines are bonded to the light emitting material (semiconductor light emitting element) in each sub-pixel, the bonding area is enlarged as shown in the figure so as to minimize the ease of bonding and resistance.

More specifically, at least one of the three data lines 1020a, 1020b, and 1020c arranged in the unit pixel portion 1090 has a horizontal portion 1094 parallel to the scan line 1040 And the semiconductor light emitting device 1050 is disposed in the horizontal portion 1094. [ In this case, a direction perpendicular to the scan line, that is, a direction in which the data line extends is perpendicular to the horizontal portion 1094, and therefore, the portion of the data line excluding the horizontal portion 1094 And may be a vertical portion 1095.

More specifically, the horizontal portions 1094a and 1094c of the first data line 1020a and the third data line 1020c are connected to the first data line 1020a and the third data line 1020c, respectively, And may protrude toward the second data line 1020b. In addition, the horizontal portions 1094a and 1094c of the first data line 1020a and the third data line 1020c may be provided for each unit pixel portion. Accordingly, the horizontal portions 1094a and 1094c of the first data line 1020a and the third data line 1020c may be sequentially arranged along the data line with a pitch between the three semiconductor light emitting devices . In this case, the horizontal portion 1094a of the first data line 1020a and the horizontal portion 1094c of the third data line 1020c may be arranged to be offset from each other along the data line.

Vertical portions 1095a and 1095b extending in a direction perpendicular to the scan lines may be disposed at both ends of the horizontal portion 1094b of the second data line 1020b. Through this structure, the second data line 1020b may have a shape in which irregularities are continuously formed along a direction perpendicular to the horizontal portion 1094b. In this case, the horizontal portions 1094a and 1094c of the first data line 1020a and the third data line 1020c are formed to be symmetrical with respect to the horizontal portion 1094b of the second data line 1020b .

In this manner, since the data lines are formed so that the area of each sub-pixel in the unit pixel portion is increased, a fixed count can be made even if three rows of data lines are arranged in the unit pixel portion.

Although the display device includes a blue light emitting diode that emits blue light, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be used. Can be applied.

13A to 13C are conceptual diagrams showing various forms of implementing colors in connection with a connection wiring structure of a new structure.

13A, the red output portion 1091, the green output portion 1092, and the blue output portion 1093 are made of gallium nitride (GaN), and indium (In) and / or aluminum And can be realized as a high output light emitting device that emits various light including blue light.

In this case, the red output portion 1091, the green output portion 1092, and the blue output portion 1093 may have a structure of red, green, and blue semiconductor light emitting elements, respectively. For example, in the red, green, and blue semiconductor light emitting devices R, G, and B, the second conductivity type semiconductor and the second conductivity type electrode are shared, And blue sub-pixels form one unit pixel portion 1090. [0064] FIG.

If the red output unit 1091, the green output unit 1092, and the blue output unit 1093 independently implement R, G, and B, an additional phosphor layer may not be provided.

Also in this case, in order to improve the contrast and to reflect the external light, the display device is arranged between a plurality of columns composed of a red output portion 1091, a green output portion 1092 and a blue output portion 1093 Gt; a < / RTI > black matrix.

As another example, referring to FIG. 13B, the semiconductor light emitting device may include white output units W having a yellow phosphor layer. In this case, the white output unit W outputs a white light, and a phosphor layer may be formed on the upper surface of the white output unit W. FIG. Further, a red phosphor layer 1081, a green phosphor layer 1082, and a blue phosphor layer 1083 may be provided on the white output portion W to form a unit pixel.

In addition, a unit pixel can be formed by using a color filter in which red, green, and blue are repeated on the white output section W. Also in this structure, as described above, each of the white output sections W includes a plurality of first conductive type electrodes and first conductive type semiconductor layers, and may be formed on a single second conductive type semiconductor layer have.

In this case, the display unit may further include a black matrix 1091 disposed between the plurality of rows of phosphors for improving the contrast and reflecting the external light. This black matrix (BM) may be disposed between the red phosphor layer 1081, the green phosphor layer 1082, and the blue phosphor layer 1083.

13C, a red phosphor layer 1081, a green phosphor layer 1082, and a blue phosphor layer 1083 may be provided on an ultraviolet ray output portion UV for outputting ultraviolet rays Do. As described above, the semiconductor light emitting device can be used not only for visible light but also for ultraviolet (UV), and can be extended to a form of a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of the upper phosphor .

In this case, the display device may further include a black matrix (BM) disposed between a plurality of rows of phosphors for improving contrast and reflecting external light. This black matrix (BM) may be disposed between the red phosphor layer 1081, the green phosphor layer 1082, and the blue phosphor layer 1083.

The above-described display device using the semiconductor light emitting device is not limited to the configuration and the method of the embodiments described above, but all or a part of the embodiments may be selectively combined so that various modifications may be made to the embodiments It is possible.

Claims (12)

A plurality of scan lines arranged to transmit a scan driving signal and arranged in parallel with each other;
A plurality of data lines arranged to cross the plurality of scan lines to transmit a data drive signal; And
And a unit pixel section having a red output section, a green output section and a blue output section for outputting red, green and blue lights, respectively,
The plurality of scan lines and the plurality of data lines are arranged in three rows in each unit pixel portion. The three rows of scan lines arranged in the unit pixel portion are connected to each other so that the scan driving signals are simultaneously applied.
In the unit pixel portion, semiconductor light emitting devices including an n-type electrode, an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a p-
The p-type electrode of the semiconductor light emitting devices is connected at a position overlapping the data lines, the n-type electrode of the semiconductor light emitting devices is connected to the scan lines,
Wherein at least two rows of the three data lines arranged in the unit pixel portion each have a horizontal portion which is parallel to the scan line and protrudes in opposite directions to each other,
The three data lines may include a first data line, a second data line, and a third data line sequentially arranged,
Wherein the horizontal portions of the first data line and the third data line protrude toward the second data line on the first data line and the third data line, respectively,
Wherein the second data line has a shape in which irregularities are continuously arranged along a direction perpendicular to the horizontal portion. delete The method according to claim 1,
And the p-type electrode of the semiconductor light emitting devices is disposed in the horizontal portion. delete The method of claim 3,
The three data lines may include a first data line, a second data line, and a third data line sequentially arranged,
And vertical portions extending in a direction perpendicular to the scan lines are disposed at both ends of a horizontal portion of the second data line. The method of claim 3,
The three data lines may include a first data line, a second data line, and a third data line sequentially arranged,
Wherein the horizontal portions of the first data line and the third data line are formed to be symmetrical with respect to the horizontal portion of the second data line. The method according to claim 1,
The three rows of scan lines may include a first scan line, a second scan line, and a third scan line sequentially arranged,
A first semiconductor light emitting element, a second semiconductor light emitting element, and a third semiconductor light emitting element connected to the first scan line, the second scan line, and the third scan line, respectively, And wherein the display device is disposed on the display device. 8. The method of claim 7,
Wherein the first semiconductor light emitting device, the second semiconductor light emitting device, and the third semiconductor light emitting device are connected to the first data line, the second data line and the third data line, respectively. 8. The method of claim 7,
A plurality of unit pixel portions are sequentially formed along the three rows of scan lines,
And a red output unit, a green output unit, and a blue output unit are repeatedly disposed in the first scan line, the second scan line, and the third scan line, respectively. The method according to claim 1,
The red output section and the green output section respectively output,
And a phosphor layer for converting light emitted from the semiconductor light emitting device into another color. 11. The method of claim 10,
And the phosphor layer is formed to extend along the scan line. The method according to claim 1,
Wherein the red output unit, the green output unit, and the blue output unit each include a red semiconductor light emitting device, a green semiconductor light emitting device, and a blue semiconductor light emitting device.

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