KR20180081378A - Display device using semiconductor light emitting device - Google Patents

Abstract

The purpose of the present invention is to provide a structure which improves a light emitting efficiency and implements a black panel in a display device using a semiconductor light emitting device. The present invention relates to a display device using a semiconductor light emitting device, the display device which comprises a substrate having a wiring electrode; a semiconductor light emitting device electrically connected to the wiring electrode; a planarization layer formed to cover the substrate and having an accommodating groove in which the semiconductor light emitting device is accommodated; a phosphor layer filled in the accommodating groove and converting colors of light; and a reflecting layer covering one surface of the phosphor layer to reflect light in an entrance of the accommodating groove and having a through-hole which opens at least a part of the entrance.

Description

Technical Field [0001] The present invention relates to a display device using a semiconductor light-

The present invention relates to a display device, and more particularly, to a display device using a semiconductor light emitting device.

Recently, display devices having excellent characteristics such as a thin film type and a flexible type in the field of display technology have been developed. On the other hand, major displays that are commercialized today are represented by LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes). However, in the case of an LCD, there is a problem that the reaction time is not fast and the implementation of the flexible is difficult. In the case of the AMOLED, there is a weak point that the life span is short and the mass production yield is not good.

Light emitting diodes (LEDs) are well-known semiconductor light emitting devices that convert current into light. In 1962, red LEDs using GaAsP compound semiconductors were commercialized, Has been used as a light source for a display image of an electronic device including a communication device. Accordingly, a method of solving the above problems by implementing a display using the semiconductor light emitting device can be presented.

Therefore, in recent years, research and development on a display device using a micro semiconductor light emitting device is under way, and such a display device has attracted attention as a next generation display because of its high image quality and high reliability. However, since such a display device uses a micro light emitting device, there is a problem that luminous efficiency and contrast are lowered when phosphors, wirings, and the like are exposed to the outside.

Accordingly, the present invention proposes a new display device based on a semiconductor light emitting device having a size of several to several tens of micrometers and capable of improving optical performance.

It is an object of the present invention to provide a structure in which a luminous efficiency is improved and a black panel is realized in a display device using a semiconductor light emitting element.

Another object of the present invention is to provide a display device having a structure in which manufacturing reliability is ensured and a manufacturing cost is reduced.

The display device according to the present invention increases the luminous efficiency through the receiving groove of the planarization layer and the reflective layer, and adjusts the size of the upper opening through which light is output.

As a specific example, the display device may include a substrate having wiring electrodes, a semiconductor light emitting element electrically connected to the wiring electrodes, and a receiving groove formed to cover the substrate, A planarization layer, a phosphor layer filled in the receiving groove and adapted to convert the color of light, and a through hole for covering at least a part of the phosphor layer so as to reflect light at an inlet of the receiving groove, As shown in Fig.

In an embodiment, the receiving recess is recessed from the top surface of the planarization layer. The wiring electrode may be covered by the lower surface of the planarization layer opposite to the upper surface of the planarization layer. The reflective layer may extend from the upper surface of the planarization layer to the upper surface of the phosphor layer.

In an exemplary embodiment, the display device includes a black matrix (BM) covering the reflective layer. The black matrix may be formed to completely cover the reflective layer, and BM through holes corresponding to the through holes may be formed in the black matrix.

In the embodiment, a color filter for filtering the color of light emitted from the phosphor layer is disposed in the through hole. The area of the through hole may be 1 to 10% of the size of the sub-pixel corresponding to the semiconductor light emitting device.

In an embodiment, the display device includes an auxiliary reflective layer formed to cover an inner wall of the receiving groove.

In the display device according to the present invention, by disposing the semiconductor light emitting element in the receiving groove of the flattening layer, the pixel is separated into the partition walls. By electrically connecting the semiconductor light emitting element to the phosphor in the receiving groove as described above, alignment of the semiconductor light emitting element is facilitated, and the display device can be manufactured with high accuracy.

Further, according to the present invention, the luminous efficiency of the pixel is improved through the reflective layer surrounding the outer surface of the barrier rib.

Further, according to the present invention, by arranging the color filter in the through-hole of the reflection layer, the upper color filter opening is made to be 10% or less, thereby achieving the black of the panel. In a display device using an existing micro semiconductor light emitting device or a display device using an OLED, a circular polarizer filter is used because a phosphor, an interconnection, and the like inside are widely exposed to the outside. In the present invention, .

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.
Fig. 2 is a partially enlarged view of part A of Fig. 1, and Figs. 3a and 3b are cross-sectional views taken along line BB and CC of Fig.
4 is a conceptual diagram showing a flip chip type semiconductor light emitting device of FIG.
FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.
6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.
7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention.
8 is a cross-sectional view taken along line DD of FIG.
9 is a conceptual diagram showing a vertical semiconductor light emitting device of FIG.
10 is a partial perspective view for explaining another embodiment of the present invention.
11 is a cross-sectional view taken along the line EE of Fig.
12 is a cross-sectional view taken along the line FF of Fig.
13 is a cross-sectional view for explaining another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals are used to designate identical or similar elements, and redundant description thereof will be omitted. The suffix "module" and " part "for the components used in the following description are given or mixed in consideration of ease of specification, and do not have their own meaning or role. In the following description of the embodiments of the present invention, a detailed description of related arts will be omitted when it is determined that the gist of the embodiments disclosed herein may be blurred. In addition, it should be noted that the attached drawings are only for easy understanding of the embodiments disclosed in the present specification, and should not be construed as limiting the technical idea disclosed in the present specification by the attached drawings.

It is also to be understood that when an element such as a layer, region or substrate is referred to as being present on another element "on," it is understood that it may be directly on the other element or there may be an intermediate element in between There will be.

The display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation device, a slate PC, , A Tablet PC, an Ultra Book, a digital TV, a desktop computer, and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiments described herein may be applied to a device capable of being displayed, even in the form of a new product to be developed in the future.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.

According to the illustrated example, the information processed in the control unit of the display device 100 may be displayed using a flexible display.

The flexible display includes a display that can be bent, twistable, collapsible, and curlable, which can be bent by an external force. For example, a flexible display can be a display made on a thin, flexible substrate that can be bent, bent, folded or rolled like paper while maintaining the display characteristics of conventional flat panel displays.

In a state where the flexible display is not bent (for example, a state having an infinite radius of curvature, hereinafter referred to as a first state), the display area of the flexible display is flat. In the first state, the display area may be a curved surface in a state of being bent by an external force (for example, a state having a finite radius of curvature, hereinafter referred to as a second state). As shown in the figure, the information displayed in the second state may be time information output on the curved surface. Such visual information is realized by independently controlling the emission of a sub-pixel arranged in a matrix form. The unit pixel means a minimum unit for implementing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as one type of semiconductor light emitting device for converting a current into light. The light emitting diode is formed in a small size, so that it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in detail with reference to the drawings.

FIG. 2 is a partial enlarged view of a portion A of FIG. 1, FIGS. 3 A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2, FIG. 4 is a conceptual view of a flip chip type semiconductor light emitting device of FIG. FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.

Referring to FIGS. 2, 3A and 3B, a display device 100 using a passive matrix (PM) semiconductor light emitting device as a display device 100 using a semiconductor light emitting device is illustrated. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 100 includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and a plurality of semiconductor light emitting devices 150.

The substrate 110 may be a flexible substrate. For example, to implement a flexible display device, the substrate 110 may comprise glass or polyimide (PI). In addition, any insulating material such as PEN (polyethylene naphthalate) and PET (polyethylene terephthalate) may be used as long as it is insulating and flexible. In addition, the substrate 110 may be either a transparent material or an opaque material.

The substrate 110 may be a wiring substrate on which the first electrode 120 is disposed, so that the first electrode 120 may be positioned on the substrate 110.

The insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is located and the auxiliary electrode 170 may be disposed on the insulating layer 160. In this case, a state in which the insulating layer 160 is laminated on the substrate 110 may be one wiring substrate. More specifically, the insulating layer 160 is formed of a flexible material such as polyimide (PI), polyimide (PET), or PEN, and is integrally formed with the substrate 110 to form a single substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150 and is disposed on the insulating layer 160 and corresponds to the position of the first electrode 120. For example, the auxiliary electrode 170 may be in the form of a dot and may be electrically connected to the first electrode 120 by an electrode hole 171 passing through the insulating layer 160. The electrode hole 171 may be formed by filling a via hole with a conductive material.

Referring to these drawings, the conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not limited thereto. For example, a layer having a specific function may be formed between the insulating layer 160 and the conductive adhesive layer 130, or a structure in which the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160 It is also possible. In the structure in which the conductive adhesive layer 130 is disposed on the substrate 110, the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity. To this end, the conductive adhesive layer 130 may be mixed with a substance having conductivity and a substance having adhesiveness. Also, the conductive adhesive layer 130 has ductility, thereby enabling the flexible function in the display device.

As an example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 may be formed as a layer having electrical insulation in the horizontal X-Y direction while permitting electrical interconnection in the Z direction passing through the thickness. Accordingly, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (hereinafter, referred to as a conductive adhesive layer).

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member. When heat and pressure are applied, only a specific part of the anisotropic conductive film has conductivity due to the anisotropic conductive medium. Hereinafter, the anisotropic conductive film is described as being subjected to heat and pressure, but other methods may be used to partially conduct the anisotropic conductive film. In this method, for example, either the heat or the pressure may be applied, or UV curing may be performed.

In addition, the anisotropic conduction medium can be, for example, a conductive ball or a conductive particle. According to the example, in the present example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member. When heat and pressure are applied, only specific portions are conductive by the conductive balls. The anisotropic conductive film may be a state in which a plurality of particles coated with an insulating film made of a polymer material are contained in the core of the conductive material. In this case, the insulating film is broken by heat and pressure, . At this time, the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and the electrical connection in the Z-axis direction is partially formed by the height difference of the mating member adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state in which a plurality of particles coated with a conductive material are contained in the insulating core. In this case, the conductive material is deformed (pressed) to the portion where the heat and the pressure are applied, so that the conductive material becomes conductive in the thickness direction of the film. As another example, it is possible that the conductive material penetrates the insulating base member in the Z-axis direction and has conductivity in the thickness direction of the film. In this case, the conductive material may have a pointed end.

According to the present invention, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of an insulating base member. More specifically, the insulating base member is formed of a material having adhesiveness, and the conductive ball is concentrated on the bottom portion of the insulating base member, and is deformed together with the conductive ball when heat and pressure are applied to the base member So that they have conductivity in the vertical direction.

However, the present invention is not limited thereto. The anisotropic conductive film may be formed by randomly mixing conductive balls into an insulating base member or by forming a plurality of layers in which a conductive ball is placed in a double- ACF) are all available.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which a conductive ball is mixed with an insulating and adhesive base material. In addition, solutions containing conductive particles can be solutions in the form of conductive particles or nanoparticles.

Referring again to FIG. 5, the second electrode 140 is located in the insulating layer 160, away from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed.

After the conductive adhesive layer 130 is formed in a state where the auxiliary electrode 170 and the second electrode 140 are positioned in the insulating layer 160, the semiconductor light emitting device 150 is connected to the semiconductor light emitting device 150 in a flip chip form The semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.

Referring to FIG. 4, the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type semiconductor layer 155 in which a p-type electrode 156, a p-type electrode 156 are formed, an active layer 154 formed on the p-type semiconductor layer 155, And an n-type electrode 152 disposed on the n-type semiconductor layer 153 and the p-type electrode 156 on the n-type semiconductor layer 153 and 154 in the horizontal direction. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 by the conductive adhesive layer 130, and the n-type electrode 152 may be electrically connected to the second electrode 140.

Referring again to FIGS. 2, 3A and 3B, the auxiliary electrode 170 is elongated in one direction, and one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150. For example, the p-type electrodes of the right and left semiconductor light emitting elements may be electrically connected to one auxiliary electrode around the auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 by heat and pressure, and the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 through the p- And only the portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 has conductivity and the semiconductor light emitting device does not have a conductive property because the semiconductor light emitting device is not press- The conductive adhesive layer 130 not only couples the semiconductor light emitting device 150 and the auxiliary electrode 170 and the semiconductor light emitting device 150 and the second electrode 140 but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitute a light emitting element array, and the phosphor layer 180 is formed in the light emitting element array.

The light emitting element array may include a plurality of semiconductor light emitting elements having different brightness values. Each of the semiconductor light emitting devices 150 constitutes a unit pixel and is electrically connected to the first electrode 120. For example, the first electrodes 120 may be a plurality of semiconductor light emitting devices, and the semiconductor light emitting devices may be electrically connected to any one of the plurality of first electrodes.

Also, since the semiconductor light emitting devices are connected in a flip chip form, the semiconductor light emitting devices grown on the transparent dielectric substrate can be used. The semiconductor light emitting devices may be, for example, a nitride semiconductor light emitting device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size.

According to the structure, the barrier ribs 190 may be formed between the semiconductor light emitting devices 150. In this case, the barrier ribs 190 may separate the individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130. For example, by inserting the semiconductor light emitting device 150 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier 190 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, the barrier ribs 190 may be provided separately from the reflective barrier ribs. In this case, the barrier rib 190 may include a black or white insulation depending on the purpose of the display device. When a barrier of a white insulator is used, an effect of enhancing reflectivity may be obtained. When a barrier of a black insulator is used, a contrast characteristic may be increased while having a reflection characteristic.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 180 converts the blue (B) light into the color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting an individual pixel.

That is, a red phosphor 181 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 151 at a position forming a red unit pixel, A green phosphor 182 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 151. [ In addition, only the blue semiconductor light emitting element 151 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel. More specifically, phosphors of one color may be stacked along each line of the first electrode 120. Accordingly, one line in the first electrode 120 may be an electrode for controlling one color. In other words, red (R), green (G), and blue (B) may be arranged in order along the second electrode 140, thereby realizing a unit pixel.

(R), green (G), and blue (B) unit pixels may be implemented by combining the semiconductor light emitting device 150 and the quantum dot QD instead of the fluorescent material. have.

In addition, a black matrix 191 may be disposed between each of the phosphor layers to improve contrast. That is, the black matrix 191 can improve the contrast of light and dark.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied.

5A, each of the semiconductor light emitting devices 150 includes gallium nitride (GaN), indium (In) and / or aluminum (Al) are added together to form a high output light Device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a unit pixel (sub-pixel), respectively. For example, red, green, and blue semiconductor light emitting elements R, G, and B are alternately arranged, and red, green, and blue unit pixels Form a single pixel, through which a full color display can be implemented.

Referring to FIG. 5B, the semiconductor light emitting device may include a white light emitting device W having a yellow phosphor layer for each individual device. In this case, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light emitting element W to form a unit pixel. Further, a unit pixel can be formed by using a color filter in which red, green, and blue are repeated on the white light emitting element W.

Referring to FIG. 5C, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the ultraviolet light emitting element UV. As described above, the semiconductor light emitting device can be used not only for visible light but also for ultraviolet (UV), and can be extended to a form of a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of the upper phosphor .

The semiconductor light emitting device 150 is disposed on the conductive adhesive layer 130 and constitutes a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 150 may be 80 mu m or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

Also, even if a square semiconductor light emitting device 150 having a length of 10 m on one side is used as a unit pixel, sufficient brightness for forming a display device appears. Accordingly, when the unit pixel is a rectangular pixel having a side of 600 mu m and the other side of 300 mu m as an example, the distance of the semiconductor light emitting element becomes relatively large. Accordingly, in such a case, it becomes possible to implement a flexible display device having HD picture quality.

The display device using the semiconductor light emitting device described above can be manufactured by a novel manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG.

6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

The conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed. A first electrode 120, an auxiliary electrode 170, and a second electrode 140 are formed on the wiring substrate, and the insulating layer 160 is formed on the first substrate 110 to form a single substrate (or a wiring substrate) . In this case, the first electrode 120 and the second electrode 140 may be arranged in mutually orthogonal directions. In addition, the first substrate 110 and the insulating layer 160 may include glass or polyimide (PI), respectively, in order to implement a flexible display device.

The conductive adhesive layer 130 may be formed, for example, by an anisotropic conductive film, and an anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is disposed.

A second substrate 112 corresponding to the positions of the auxiliary electrode 170 and the second electrodes 140 and having a plurality of semiconductor light emitting elements 150 constituting individual pixels is disposed on the semiconductor light emitting element 150 Are arranged so as to face the auxiliary electrode 170 and the second electrode 140.

In this case, the second substrate 112 is a growth substrate for growing the semiconductor light emitting device 150, and may be a spire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in units of wafers, the semiconductor light emitting device can be effectively used in a display device by having an interval and a size at which a display device can be formed.

Then, the wiring substrate and the second substrate 112 are thermally bonded. For example, the wiring board and the second substrate 112 may be thermocompression-bonded using an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermocompression bonding. Only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity due to the characteristics of the anisotropic conductive film having conductivity by thermocompression, The device 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and partition walls may be formed between the semiconductor light emitting devices 150.

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO).

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating a wiring substrate on which the semiconductor light emitting device 150 is coupled with silicon oxide (SiOx) or the like.

Further, the method may further include forming a phosphor layer on one surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red phosphor or a green phosphor for converting the blue (B) A layer can be formed on one surface of the device.

The manufacturing method and structure of the display device using the semiconductor light emitting device described above can be modified into various forms. For example, a vertical semiconductor light emitting device may be applied to the display device described above. Hereinafter, the vertical structure will be described with reference to Figs. 5 and 6. Fig.

In the modifications or embodiments described below, the same or similar reference numerals are given to the same or similar components as those of the previous example, and the description is replaced with the first explanation.

8 is a cross-sectional view taken along the line DD of FIG. 7, and FIG. 9 is a conceptual view illustrating a vertical semiconductor light emitting device of FIG. 8. FIG. 7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, to be.

Referring to these drawings, the display device may be a display device using a passive matrix (PM) vertical semiconductor light emitting device.

The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and a plurality of semiconductor light emitting devices 250.

The substrate 210 is a wiring substrate on which the first electrode 220 is disposed. The substrate 210 may include polyimide (PI) to implement a flexible display device. In addition, any insulating and flexible material may be used.

The first electrode 220 is disposed on the substrate 210 and may be formed as a long bar electrode in one direction. The first electrode 220 may serve as a data electrode.

A conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is located. The conductive adhesive layer 230 may be formed of an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing a conductive particle, or the like, as in a display device using a flip chip type light emitting device. ) And the like. However, the present embodiment also exemplifies the case where the conductive adhesive layer 230 is realized by the anisotropic conductive film.

If the semiconductor light emitting device 250 is connected to the semiconductor light emitting device 250 by applying heat and pressure after the anisotropic conductive film is positioned in a state where the first electrode 220 is positioned on the substrate 210, And is electrically connected to the electrode 220. In this case, the semiconductor light emitting device 250 may be disposed on the first electrode 220.

As described above, the electrical connection is generated because heat and pressure are applied to the anisotropic conductive film to partially conduct in the thickness direction. Therefore, in the anisotropic conductive film, it is divided into a portion 231 having conductivity in the thickness direction and a portion 232 having no conductivity.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 realizes electrical connection as well as mechanical bonding between the semiconductor light emitting element 250 and the first electrode 220.

Thus, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 250 may be 80 μm or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 electrically connected to the vertical semiconductor light emitting device 250 are disposed between the vertical semiconductor light emitting devices in a direction crossing the longitudinal direction of the first electrode 220.

9, the vertical type semiconductor light emitting device includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255 An n-type semiconductor layer 253 formed on the active layer 254 and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom may be electrically connected to the first electrode 220 by the conductive adhesive layer 230, and the n-type electrode 252 located at the top may be electrically connected to the second electrode 240 As shown in FIG. Since the vertical semiconductor light emitting device 250 can arrange the electrodes up and down, it has a great advantage that the chip size can be reduced.

Referring to FIG. 8 again, a phosphor layer 280 may be formed on one side of the semiconductor light emitting device 250. For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and a phosphor layer 280 for converting the blue (B) . In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 251 at a position forming a red unit pixel, A green phosphor 282 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 251. In addition, only the blue semiconductor light emitting element 251 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied to a display device to which a flip chip type light emitting device is applied, as described above.

The second electrode 240 is located between the semiconductor light emitting devices 250 and electrically connected to the semiconductor light emitting devices 250. For example, the semiconductor light emitting devices 250 may be disposed in a plurality of rows, and the second electrode 240 may be disposed between the columns of the semiconductor light emitting devices 250.

The second electrode 240 may be positioned between the semiconductor light emitting devices 250 because the distance between the semiconductor light emitting devices 250 forming the individual pixels is sufficiently large.

The second electrode 240 may be formed as a long bar-shaped electrode in one direction and may be disposed in a direction perpendicular to the first electrode.

The second electrode 240 and the semiconductor light emitting device 250 may be electrically connected by a connection electrode protruding from the second electrode 240. More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a part of the ohmic electrode by printing or vapor deposition. Accordingly, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 can be electrically connected.

According to the example, the second electrode 240 may be disposed on the conductive adhesive layer 230. A transparent insulating layer (not shown) containing silicon oxide (SiOx) or the like may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. In addition, the second electrode 240 may be formed spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as ITO (Indium Tin Oxide) is used for positioning the second electrode 240 on the semiconductor light emitting device 250, the problem that the ITO material has poor adhesion with the n-type semiconductor layer have. Accordingly, the present invention has an advantage in that the second electrode 240 is positioned between the semiconductor light emitting devices 250, so that a transparent electrode such as ITO is not used. Therefore, the light extraction efficiency can be improved by using a conductive material having good adhesiveness with the n-type semiconductor layer as a horizontal electrode without being bound by transparent material selection.

According to the structure, the barrier ribs 290 may be positioned between the semiconductor light emitting devices 250. That is, the barrier ribs 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 forming the individual pixels. In this case, the barrier ribs 290 may separate the individual unit pixels from each other, and may be formed integrally with the conductive adhesive layer 230. For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier ribs 290 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, as the partition 190, a reflective barrier may be separately provided. The barrier ribs 290 may include black or white insulators depending on the purpose of the display device.

If the second electrode 240 is directly disposed on the conductive adhesive layer 230 between the semiconductor light emitting devices 250, the barrier ribs 290 may be formed between the vertical semiconductor light emitting device 250 and the second electrode 240 As shown in FIG. Therefore, individual unit pixels can be formed with a small size by using the semiconductor light emitting device 250, and the distance between the semiconductor light emitting device 250 can be relatively large enough so that the second electrode 240 can be electrically connected to the semiconductor light emitting device 250 ), And it is possible to realize a flexible display device having HD picture quality.

In addition, according to the present invention, a black matrix 291 may be disposed between the respective phosphors to improve the contrast. That is, this black matrix 291 can improve the contrast of light and dark.

As described above, the semiconductor light emitting device 250 is disposed on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. Therefore, a full color display in which red (R), green (G), and blue (B) unit pixels form one pixel can be realized by the semiconductor light emitting device.

In the above-described display using the semiconductor light emitting device of the present invention, the semiconductor light emitting device grown on the growth substrate is transferred to the wiring substrate using an anisotropic conductive film (ACF). However, this method has a disadvantage in that it is difficult to secure manufacturing reliability and a manufacturing cost is high. In particular, in the case of digital signage, since the property of flexible is not required, a different approach is required for a display using a semiconductor light emitting element.

Hereinafter, in order to overcome the above-described technical difficulties and to achieve a high-resolution display based on an ultra-small micro-LED, the present invention provides a novel blue LED display-based pixel structure having a size of several to several tens of micrometers Lt; / RTI >

More specifically, by disposing the semiconductor light emitting element in the receiving groove of the flattening layer, alignment of the semiconductor light emitting element can be facilitated, and a display device can be manufactured with high precision. In addition, And the size of the upper opening through which light is output is adjusted to realize a black panel.

Hereinafter, a display device according to another embodiment of the present invention for increasing the luminous efficiency and implementing a black panel will be described in more detail with reference to the drawings.

FIG. 10 is a partial perspective view for explaining another embodiment of the present invention, FIG. 11 is a sectional view taken along line E-E of FIG. 10, and FIG. 12 is a sectional view taken along line F-F of FIG.

10, 11, and 12, a display device 1000 using a passive matrix (PM) type semiconductor light emitting device as a display device 1000 using a semiconductor light emitting device is illustrated. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 1000 includes a substrate 1010 and a plurality of semiconductor light emitting devices 1050.

The substrate 1010 may be a wiring substrate on which the first electrode 1020 and the second electrode 1040 are disposed. Accordingly, the first electrode 1020 and the second electrode 1040 may be positioned on the substrate 1010. At this time, the first electrode 1020 and the second electrode 1040 may be wiring electrodes.

The substrate 1010 may include polyimide (PI) to implement a flexible display device. Alternatively, the substrate 1010 may be formed of an insulating material, but not a flexible material. Further, the substrate 1010 may be either a transparent material or an opaque material.

The first electrode 1020 is disposed on the substrate 1010 and may be formed as a long bar electrode in one direction. The first electrode 1020 may serve as a data electrode.

The insulating layer 1011 may be disposed on the substrate 1010 where the first electrode 1020 is located and the auxiliary electrode 1021 may be disposed on the insulating layer 1011. [ In this case, a state in which the insulating layer 1011 is laminated on the substrate 1010 may be one wiring substrate. More specifically, the insulating layer 1011 may be made of an insulating material such as polyimide (PI), PET, PEN, or the like, and may be formed integrally with the substrate 1010 to form a single substrate.

The auxiliary electrode 1021 is an electrode that electrically connects the first electrode 1020 and the semiconductor light emitting device 1050 and is disposed on the insulating layer 1011 and disposed corresponding to the position of the first electrode 1020. For example, the auxiliary electrode 1021 may be in the form of a dot and may be electrically connected to the first electrode 1020 by an electrode hole 1022 passing through the insulating layer 1011. The electrode hole 1022 may be formed by filling a via hole with a conductive material.

The second electrode 1040 is located on the insulating layer 1011 away from the auxiliary electrode 1021. The second electrode 1040 may be formed on the insulating layer 1011 and may have a long bar shape in a direction perpendicular to the first electrode 1020. The second electrode 1040 may serve as a scan electrode.

Referring to these figures, on one side of the insulating layer 1011, electrodes of the semiconductor light emitting element are coupled to the wiring electrodes by soldering or the like. More specifically, the semiconductor light emitting device 1050 is electrically connected to the auxiliary electrode 1021 and the second electrode 1040.

The plurality of semiconductor light emitting devices 1050 may have the structure described above with reference to FIG. 4, and may be formed of gallium nitride (GaN), indium (In) and / or aluminum (Al) And can be realized as a high-output light-emitting device that emits light. For example, the plurality of semiconductor light emitting devices 1050 may be gallium nitride thin films formed in various layers such as n-Gan, p-Gan, AlGaN, and InGan. However, the present invention is not necessarily limited thereto, and the plurality of semiconductor light emitting devices may be implemented as a light emitting device that emits green light. In addition, the semiconductor light emitting device may be a micro light emitting diode chip. Here, the micro-LED chip may have a cross-sectional area smaller than that of the light emitting region in the sub-pixel, and may have a scale of 1 to 100 micrometers, for example.

More specifically, the semiconductor light emitting device includes a first conductive type semiconductor layer 1155 on which a first conductive type electrode 1156, a first conductive type electrode 1156 are formed, a first conductive type semiconductor layer 1155 on a first conductive type semiconductor layer 1155, The second conductive type semiconductor layer 1153 formed on the active layer 1154 and the second conductive type semiconductor layer 1153 on the second conductive type semiconductor layer 1153, And includes a conductive electrode 1152. In this case, the second conductive type electrode is disposed on one surface of the second conductive type semiconductor layer 1153, and an undoped semiconductor layer 1153a is formed on the other surface of the second conductive type semiconductor layer 1153 May be formed.

The first conductive electrode 1156 may be electrically connected to the first electrode 1020 by soldering with the auxiliary electrode 1021 and the second conductive electrode 1152 may be electrically connected to the second electrode 1040 by soldering. As shown in FIG. The first conductive type electrode 1156 and the first conductive type semiconductor layer 1155 may be a p-type electrode and a p-type semiconductor layer, respectively. The second conductive type electrode 1152 and the second conductive type The semiconductor layer 1153 may be an n-type electrode and an n-type semiconductor layer, respectively. However, the present invention is not limited thereto, and the first conductivity type may be n-type and the second conductivity type may be p-type.

The first electrode 1020 and the second electrode 1040 are electrically connected to the first conductive type electrode 1156 and the second conductive type electrode 1152 of one semiconductor light emitting device, And supplies scan and data signals to the pixels. The sub-pixel includes a single semiconductor light emitting element as a minimum unit region in which actual light is emitted. At least three adjacent pixels may constitute one unit pixel for color display. For example, one unit pixel includes adjacent red pixels, green pixels, and blue pixels, and may further include white pixels for improving brightness.

Referring to these drawings, a planarization layer 1060 having a receiving groove 1061 formed to cover the substrate and accommodating the semiconductor light emitting device may be formed on one surface of the substrate 1010.

For example, the planarization layer 1060 functions as a protective film covering the substrate and covers the wiring electrodes to form a plane, and is made of an insulating material. As an example, the planarization layer 1060 may include a photoresist, an optical polymer material, and other industrial plastic materials.

According to the illustration, the receiving groove 1061 may be provided in each of the plurality of pixels. The receiving groove 1061 is provided in a light emitting region defined in the sub-pixel, and houses the semiconductor light emitting element 1050. Each of the plurality of semiconductor light emitting devices 1050 is connected to the first electrode 1020 and the second electrode 1040 in the corresponding sub-pixel to emit light with a brightness proportional to the current supplied thereto.

The receiving groove 1061 is recessed from the planarization layer 1060. The receiving groove 1061 is recessed from the upper surface of the planarizing layer 1060 toward the substrate. For example, the receiving groove 1061 may have a cup shape that is wider than the semiconductor light emitting device 1050. At this time, the receiving groove 1061 may be recessed in the planarization layer 1060 to have a depth larger than the thickness (or total height) of the semiconductor light emitting device 1050.

The receiving groove 1061 is recessed to a position where one side of the substrate is exposed, and a part of the wiring electrode may be disposed on the bottom of the receiving groove 1061. The wiring electrode is covered by the lower surface of the planarization layer 1060 opposite to the upper surface of the planarization layer 1060 and the receiving groove 1061 is recessed from the upper surface of the planarization layer 1060 to one surface of the substrate . As the semiconductor light emitting device is mounted on the bottom of the receiving groove 1061, the wiring electrode can be electrically connected to the semiconductor light emitting device.

In this case, the receiving groove 1061 may be formed with a phosphor layer 1080 filled with a phosphor to change the color of light.

For example, the semiconductor light emitting devices are blue semiconductor light emitting devices that emit blue (B) light, and the phosphor layer 1080 has a function of converting the blue (B) light into colors such as yellow, white, red, . At this time, the colors to be converted by the sub-pixels may be different from each other. As an example of this, it is also possible to convert blue light to green in a green pixel and convert blue light into red in a red pixel. As another example, it is also possible to convert blue light into yellow light in a green pixel and blue light in a red pixel to a wavelength in which red and yellow are mixed.

The phosphor layer 1080 may include a first phosphor layer 2081 disposed at a position corresponding to a red pixel and a second phosphor layer 2082 disposed at a position corresponding to a green pixel. In this case, each of the first phosphor portion 1081 and the second phosphor portion 1082 is provided with a red phosphor capable of converting the blue light of the blue semiconductor light emitting elements 1051 and 1052 into red light or green light, A phosphor may be provided. At this time, a light-transmissive material 1083 that does not convert color may be disposed at the position of the blue pixel. The light transmitting material 1083 is a material having a high transmittance in the visible light region, for example, epoxy-based PR (photoresist), PDMS (polydimethylsiloxane), resin, or the like can be used.

As another example, the first phosphor portion 1081 and the second phosphor portion 1082 may be provided with a yellow phosphor capable of converting the blue light of the blue semiconductor light emitting elements 1051 and 1052 into yellow light or white light have. In this case, yellow light or white light can be converted into red, green, and blue through the color filter.

Since the semiconductor light emitting device is accommodated in the receiving groove, the plurality of phosphor portions 1081 and 1082 can be partitioned by the planarization layer 1060. More specifically, the body of the planarization layer 1060 serves as a barrier, and the barrier may separate the subpixels from each other and be disposed between the semiconductor light emitting elements.

Further, a reflection structure for improving the reflection characteristic may be introduced into the entrance of the receiving groove 1061. As an example, the reflective layer 1070 covers one surface of the phosphor layer 1080 so that light is reflected at the entrance of the receiving groove 1061.

The reflective layer 1070 may be a metal, a dielectric thin film, a mirror coating, or the like, and may be formed on a plane. The upper surface of the planarization layer 1060 and the upper surface of the phosphor layer 1080 are disposed on the same plane and the reflective layer 1070 is formed on the upper surface of the planarization layer 1060, And may extend to the upper surface.

According to the illustration, the auxiliary reflection layer 1071 may be formed so as to cover the inner wall of the receiving groove 1061. The auxiliary reflective layer 1071 may be formed of the same material as the reflective layer 1070 and may be coated on the inner wall of the receiving groove 1061. The auxiliary reflective layer 1071 may extend from the inner wall of the receiving groove 1061 to the bottom of the receiving groove 1061. The auxiliary reflection layer 1071 may be coated on the bottom of the receiving groove 1061 except for the wiring electrodes, that is, the first and second electrodes, and the ends may be spaced apart from the wiring electrodes have.

An insulating layer 1072 may be formed between the auxiliary reflective layer 1071 and the wiring electrode at the bottom of the receiving groove 1061. For example, the insulating layer 1072 may be formed to cover the bottom of the receiving groove 1061 between the auxiliary reflecting layer 1071 and the wiring electrode while overlapping the edge of the auxiliary reflecting layer 1071 and the wiring electrode. do. In this case, the insulating layer 1072 may incorporate non-conductive reflective particles. As another example, the insulating layer 1072 may be formed of a white insulator and have a reflective property.

According to this structure, the phosphor layer 1080 can be surrounded by the reflective layer 1070 and the auxiliary reflective layer 1071. In addition, the auxiliary reflection layer 1071 is covered with the phosphor layer 1080 in the receiving groove 1061.

In this case, the auxiliary reflective layer 1071 may be formed to be thinner than the reflective layer 1070. The planarization layer 1060 may be formed of a material having a reflective characteristic, and the auxiliary reflective layer 1071 may be formed to have a very thin thickness or may be formed of a layer coated with reflective particles.

Meanwhile, the auxiliary reflection layer 1071 may extend from the inner wall of the receiving groove 1061 to the upper surface of the planarization layer 1060. For example, the auxiliary reflection layer 1071 covers an outer surface of the planarization layer 1060 except a region where the wiring electrode is located at the bottom of the receiving groove 1061. According to this structure, at least a part of the auxiliary reflective layer 1071 may be formed between the upper surface of the planarization layer 1060 and the reflective layer 1070.

The reflective layer 1070 may have a through hole 1073 that opens at least a part of the entrance of the receiving groove 1061. The through hole 1073 may be formed at a position facing the semiconductor light emitting device and may be formed in the reflective layer 1070 for each sub-pixel.

Since the phosphor layer 1080 is surrounded by the reflective layer 1070 and the auxiliary reflective layer 1071, the light emitted from the semiconductor light emitting device is reflected inside the receiving groove 1061, 1073). As described above, the light-emitting efficiency can be maximized by separating the pixels into barrier ribs and preventing the light from leaking through the reflective layer 1070 therein.

In the illustrated embodiment, a color filter CF for filtering the color of light emitted from the phosphor layer 1080 is disposed in the through hole 1073. The color filter CF may be filled in the through hole 1073 and may have a structure in which portions for filtering the red wavelength, the green wavelength, and the blue wavelength are sequentially disposed in each sub-pixel.

At this time, a portion CF1 for filtering red and a portion CF2 for filtering green are arranged above the first phosphor portion 1081 and the second phosphor portion 1082, A portion (not shown) for filtering blue to cover the transmissive material 1083 may be disposed.

On the other hand, the reflective layer 1070 is covered with a black matrix (BM), whereby the black of the panel is realized. The black matrix BM is formed to completely cover the reflective layer 1070 and BM through holes 1074 corresponding to the through holes 1073 may be formed in the black matrix BM. However, the present invention is not limited thereto, and the reflective layer 1070 may be covered with a light absorbing material to provide an absorbing layer. The black matrix BM may be an example of the absorbing layer.

According to the structure described above, the light emitting position of the sub-pixel corresponds to the through hole 1073, and red, green, and blue are realized by the color filter CF at this portion. At this time, the area of the through hole 1073 may be 1 to 10% of the size of the sub-pixel corresponding to the semiconductor light emitting device. More specifically, the aperture of the color filter CF on the display is minimized to realize black of the panel. The aperture ratio of the color filter CF is equal to or less than 10% of the entire panel, and thus the contrast of the display can be increased.

Meanwhile, the display device described above can be applied to a passive matrix (PM) type or a semiconductor light emitting device of the active matrix (AM) type. Hereinafter, with reference to FIG. 13, another embodiment of the present invention to which an active matrix type semiconductor light emitting element is applied will be described.

13 is a cross-sectional view showing still another embodiment of the present invention.

As shown in the figure, a display device 2000 using an active matrix semiconductor light emitting device as a display device 2000 using a semiconductor light emitting device is illustrated.

In this example, the structures of the reflection layer 2070, the black matrix (BM), the color filter (CF), the through holes 2073 and the BM through holes 2074 are the same as those described above with reference to Figs. 10 to 12 , So the description is replaced with the above.

The display device 2000 includes a substrate 2010 and a plurality of semiconductor light emitting elements 2050. [

The substrate 2010 is a thin film transistor array substrate, and may be made of glass or a plastic material. As in the above-described example, the receiving groove 2061 is recessed from the planarization layer 2060 provided on the substrate 2010 so as to cover the pixel circuit. For example, the receiving groove 2061 may have a cup shape having a larger size than the semiconductor light emitting device 2050. Unlike the above-described example, the inside of the receiving groove 2061 may be formed in two stages. This is because the active matrix is applied so that the wiring is formed within the receiving groove.

More specifically, the first conductive type electrode of the plurality of semiconductor light emitting devices 2050 is connected to the source electrode of the driving thin film transistor T2 through the first contact hole CH1, and the second conductive type electrode is connected to the second contact And is connected to the common power supply line CL through the hole CH2.

In this example, the semiconductor light emitting element 2050 is housed in the receiving groove 2061 recessed in the light emitting region of the pixel, and the electrodes of the semiconductor light emitting element 2050 are connected to the pixel circuit 2050 through the contact holes CH1 and CH2. The connection process of the semiconductor light emitting device 2050 can be simplified.

The driving thin film transistor T2 includes a gate electrode GE, a semiconductor layer SCL, an ohmic contact layer OCL, a source electrode SE, and a drain electrode DE.

The gate electrode GE is formed on the substrate 2010 together with the gate line GL. The gate electrode GE is covered with the gate insulating layer 2112.

The gate insulating layer 2112 may be formed of a single layer or a plurality of layers made of an inorganic material, and may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or the like.

The semiconductor layer SCL is provided in the form of a predetermined pattern (or island) on the gate insulating layer 2112 so as to overlap with the gate electrode GE. The semiconductor layer SCL may be formed of a semiconductor material composed of any one of amorphous silicon, polycrystalline silicon, oxide, and organic material, but is not limited thereto.

The ohmic contact layer OCL is provided on the semiconductor layer SCL in a predetermined pattern or island shape. Here, the ohmic contact layer PCL is for ohmic contact between the semiconductor layer SCL and the source / drain electrodes SE, DE and can be omitted.

The source electrode SE is formed on the other side of the ohmic contact layer OCL so as to overlap with one side of the semiconductor layer SCL. The source electrode SE is formed together with a data line (not shown) and is branched or protruded from an adjacent data line.

The drain electrode DE is formed on the other side of the ohmic contact layer OCL so as to be spaced apart from the source electrode SE while overlapping with the other side of the semiconductor layer SCL. The drain electrode DE is formed with a data line and a source electrode SE.

An interlayer insulating layer 2114 is formed on the upper surface of the substrate 2010 so as to cover the pixel circuit including the driving thin film transistor T2. The interlayer insulating layer 2114 may be made of an inorganic material such as silicon oxide (SiOx), silicon nitride (SiNx), or organic material such as benzocyclobutene or photo acryl.

The planarization layer 2060 is formed on the upper surface of the substrate 2010 so as to cover the interlayer insulating layer 2114. This planarization layer 2060 protects the pixel circuit including the driving thin film transistor T2 while providing a flat surface on the interlayer insulating layer 2114. [ The planarization layer 2060 according to one example may be formed of an organic material such as benzocyclobutene or photo acryl.

The bottom surface of the receiving groove 2061 may be located in the planarizing layer 2060, the interlayer insulating layer 2114, or the gate insulating film 2112 depending on the thickness of the semiconductor light emitting device 2050. Further, the receiving groove 2061 may be formed by removing both the gate insulating film 2112, the interlayer insulating layer 2114, and the planarization layer 2060 which overlap the light emitting region of the sub-pixel. The receiving groove 2061 may have a cup shape having a larger size than the semiconductor light emitting device 2050.

At this time, the first conductive type electrode 2156 and the second conductive type electrode 2152 of the semiconductor light emitting element 2050 are separated from the bottom of the receiving groove 2061. For example, in the passive matrix method described above, the semiconductor light emitting element can be vertically inverted and accommodated in the receiving groove 2061. The first conductive electrode 2156 is connected to the source electrode SE of the driving thin film transistor T2 and the second conductive electrode 2152 is connected to the common power line CL.

The first conductive type electrode 2156 and the second conductive type electrode 2152 may have a height difference with respect to the second conductive type semiconductor layer 2153, The electrically conductive electrode in the relatively low position of the shaped electrode 2152 may be positioned on the same horizontal line as the stepped portion 2162 formed in the side wall of the planarization layer 2060. [

According to the illustration, each of the plurality of sub-pixels may include a pixel electrode pattern AE and a common electrode pattern CE.

The pixel electrode pattern AE electrically connects the source electrode SE of the driving TFT T2 to the first conductive type electrode 2156 of the semiconductor light emitting device 2050. The pixel electrode pattern AE according to an exemplary embodiment is connected to the source electrode SE of the driving thin film transistor T2 through the first contact hole CH1 provided in the planarization layer 2060, 1 conductive type electrode 2156 is connected.

The common electrode pattern CE electrically connects the common power supply line CL to the second conductive type electrode 2152 of the semiconductor light emitting device 2050. The pixel electrode pattern AE according to an exemplary embodiment is connected to the common power line CL through the second contact hole CH2 provided in the planarization layer 2060 and is electrically connected to the second conductive electrode 2152 ).

Each of the pixel electrode pattern AE and the common electrode pattern CE may be formed of a transparent conductive material. The transparent conductive material may be made of a material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto.

In this example, the substrate 2010 further includes an adhesive layer 2120 for fixing the semiconductor light emitting element 2050 to the receiving groove 2061.

The adhesive layer 2120 is interposed between the semiconductor light emitting device 2050 and the bottom surface of the receiving groove 2061 to attach the semiconductor light emitting device 2050 to the bottom surface of the receiving groove 2061.

The substrate 2010 may further include a filler 2117 filled in the periphery of the semiconductor light emitting device 2050 disposed in the receiving groove 2061. [

The filler 2117 is filled in the peripheral space of the receiving groove 2061 to which the semiconductor light emitting device 2050 is attached. The filler 2117 may be made of a thermosetting resin or a photocurable resin. The filler 2117 is filled in the peripheral space of the receiving groove 2061 and then hardened to flatten the upper surface of the peripheral space of the receiving groove 2061 while removing the air gap in the receiving groove 2061. The filler 2117 may serve as a passivation layer of the semiconductor light emitting device while supporting the pixel electrode pattern AE and the common electrode pattern CE.

According to the drawing, the phosphor layer 2080 covers an area higher than the step portion 2162 of the receiving groove. Accordingly, the phosphor layer is formed so as to cover the pixel electrode pattern AE, the common electrode pattern CE, the semiconductor light emitting element step portion, and the like. The detailed structure of the phosphor layer 2080 is the same as that of the phosphor layer described above with reference to FIGS. 10 to 12, and the description thereof is omitted.

As described above, the present invention can be applied to the active matrix method. In this case, the time required for connecting the light emitting element to the pixel circuit can be greatly shortened, thereby improving the productivity of the light emitting diode display.

The above-described display device using the semiconductor light emitting device is not limited to the configuration and the method of the embodiments described above, but all or a part of the embodiments may be selectively combined so that various modifications may be made to the embodiments It is possible.

Claims (13)

A substrate having wiring electrodes;
A semiconductor light emitting element electrically connected to the wiring electrode;
A planarization layer covering the substrate, the planarization layer including a receiving groove in which the semiconductor light emitting device is received;
A phosphor layer filled in the receiving groove and adapted to change the color of light; And
And a reflective layer covering one surface of the phosphor layer so as to reflect light at an entrance of the receiving groove and having a through hole opening at least a part of the inlet. The method according to claim 1,
And the receiving groove is recessed from the upper surface of the planarizing layer. 3. The method of claim 2,
Wherein the wiring electrode is covered by a lower surface of the planarization layer opposite to an upper surface of the planarization layer. 3. The method of claim 2,
Wherein the reflective layer extends from an upper surface of the planarization layer to an upper surface of the phosphor layer. The method according to claim 1,
And a black matrix (BM) covering the reflective layer. 6. The method of claim 5,
Wherein the black matrix is formed to completely cover the reflective layer, and the black matrix has BM through holes corresponding to the through holes. The method according to claim 1,
And a color filter for filtering the color of light emitted from the phosphor layer is disposed in the through hole. 8. The method of claim 7,
And the area of the through hole is 1 to 10% of the size of the sub-pixel corresponding to the semiconductor light emitting device. The method according to claim 1,
Further comprising an auxiliary reflecting layer formed to cover an inner wall of the receiving groove. 10. The method of claim 9,
Wherein the auxiliary reflection layer extends from the inner wall of the receiving groove to the bottom of the receiving groove. 11. The method of claim 10,
And an insulating layer is formed between the auxiliary reflection layer and the wiring electrode at the bottom of the receiving groove. 10. The method of claim 9,
Wherein at least a part of the auxiliary reflective layer is formed between the upper surface of the planarization layer and the reflective layer. 13. The method of claim 12,
Wherein the auxiliary reflective layer extends from an inner wall of the receiving groove to an upper surface of the planarization layer.

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