KR20180135335A - Display device using semiconductor light emitting device - Google Patents

Abstract

The present invention relates to a display device and, in particular, to a display device comprising: a substrate; a first electrode unit which is arranged on the substrate and is extended in a first direction; a plurality of semiconductor light emitting elements which are electrically connected to the first electrode unit; an insulating layer which is formed to cover at least a part of the first electrode unit and is filled between the semiconductor light emitting elements; and a second electrode unit which is electrically connected to the semiconductor light emitting elements on the insulating layer. The second electrode unit comprises: a first sub-electrode disposed on the insulating layer and extended in a second direction perpendicular to the first direction; a second sub-electrode extended from the first sub-electrode and electrically connected to the semiconductor light-emitting elements; and a third sub-electrode overlapping at least a part of the second sub-electrode, covering one surface of the semiconductor light-emitting elements, and made of a light-transmitting conductive material.

Description

Technical Field [0001] The present invention relates to a display device using a semiconductor light-

The present invention relates to a display device, and more particularly, to a display device using a semiconductor light emitting device.

In recent years, display devices having excellent characteristics such as a thin shape and a flexible shape in the field of display technology have been developed. On the other hand, major displays that are commercialized today are represented by LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes).

However, in the case of LCD, there is a problem that the reaction time is not fast and the implementation of flexible is difficult. In the case of AMOLED, there is a weak point that the lifetime is short, the mass production yield is not good, and the degree of flexible is weak.

Light emitting diodes (LEDs) are well-known semiconductor light emitting devices that convert current into light. In 1962, red LEDs using GaAsP compound semiconductors were commercialized, Has been used as a light source for a display image of an electronic device including a communication device. Accordingly, a method of solving the above problems by implementing a flexible display using the semiconductor light emitting device can be presented.

On the other hand, when implementing a display device using a semiconductor light emitting device, some semiconductor light emitting devices may have defects. In this case, a method of replacing a defective semiconductor light emitting device with a semiconductor light emitting device without defects has actively been developed ought.

More specifically, when a defect occurs in some semiconductor light emitting devices in a substrate on which a semiconductor light emitting device is disposed, there are two methods for solving the problem. One method is a replacement repair method in which a defective semiconductor light emitting element is removed and a new semiconductor light emitting element is attached. In another method, two or more cells having redundant cells are disposed in a unit cell, and the electrical connection of the NG cell corresponding to the defective semiconductor light emitting device is disconnected, and only the remaining cells included in the unit cell are driven There is a redundancy repair method.

The present invention is intended to provide an electrode arrangement structure capable of replacing a semiconductor light emitting element more efficiently by using a replacement repair system.

In addition, another object of the present invention is to provide a structure capable of replacing the semiconductor light emitting element in a repair repair manner while increasing the aperture ratio of the light emitting element in the peninsula.

A display device according to the present invention includes a substrate, a first electrode portion disposed on the substrate and extending along a first direction, a plurality of semiconductor light emitting devices electrically connected to the first electrode portion, An insulating layer filling the space between the plurality of semiconductor light emitting elements, the insulating layer covering at least a part of the plurality of semiconductor light emitting elements; And a second electrode portion electrically connected to the plurality of semiconductor light emitting elements on the insulating layer, wherein the second electrode portion is disposed on the insulating layer and has a second direction perpendicular to the first direction A first sub-electrode extending along the first sub-electrode; A second sub-electrode extending from the first sub-electrode and electrically connected to the plurality of semiconductor light-emitting devices; And a third sub-electrode overlapping at least a part of the second sub-electrode and covering one surface of the plurality of semiconductor light-emitting devices, the third sub-electrode being formed of a light-transmitting conductive material.

In an exemplary embodiment, each of the plurality of semiconductor light emitting devices may include first and second conductivity type semiconductor layers; An active layer formed between the first and second conductive semiconductor layers; A first conductive type electrode formed on one surface of the first conductive type semiconductor layer and electrically connected to the first electrode portion; And a second conductive type electrode formed on one surface of the second conductive type semiconductor layer and electrically connected to the second electrode type portion, wherein the first and second conductive type electrodes are formed on the active layer And the first sub-electrode is disposed on the insulating layer and is spaced apart from the second conductive-type electrode.

In one embodiment, the second sub electrode covers at least a portion of the second conductive type electrode, and electrically connects the first sub-electrode and the second conductive type electrode.

In one embodiment of the present invention, the second conductive type electrode is formed so as to cover a part of the second conductivity type semiconductor layer and is located on one side of the second conductivity type semiconductor layer adjacent to the first sub- .

In the embodiment, the third sub-electrode covers the second conductive type electrode and the remaining one of the second conductive type semiconductor layers not covered by the second conductive type electrode.

In an exemplary embodiment, the second sub-electrode includes a plurality of electrode lines electrically connecting each of the plurality of semiconductor light emitting devices to the first sub-electrode.

In an embodiment, at least some of the plurality of electrode lines are cut so that the electrical connection path is cut off.

As another example, a display device according to the present invention includes: a substrate; A first electrode portion disposed on the substrate and extending along a first direction; A plurality of semiconductor light emitting elements electrically connected to the first electrode unit; An insulating layer covering at least a part of the first electrode part and filling the space between the plurality of semiconductor light emitting elements; And a second electrode portion electrically connected to the plurality of semiconductor light emitting elements on the insulating layer, wherein the second electrode portion includes a first sub electrode, which is spaced apart from the plurality of semiconductor light emitting elements on the insulating layer, ; And a second sub-electrode extending from the first sub-electrode and electrically connecting the plurality of semiconductor light-emitting devices to the first sub-electrode, the second sub-electrode being formed of a light-transmitting conductive material.

In an embodiment, the first sub-electrode extends along a second direction perpendicular to the first direction, and the second sub-electrode is connected to the first sub-electrode and extends along the second direction And a protruding electrode protruding from the line electrode toward the plurality of semiconductor light emitting elements spaced apart from the first sub electrode.

In the embodiment, the projecting electrode covers one surface of the semiconductor light emitting element.

According to the present invention, the first sub-electrode is disposed apart from the semiconductor light emitting device, and the third sub-electrode electrically connected to the first sub-electrode is formed on the semiconductor light- The semiconductor light emitting element can be prevented from being covered by the opaque first sub electrode. Therefore, since the light emitting region of the semiconductor light emitting element is covered by the third sub-electrode which is a transparent electrode, the aperture ratio of the semiconductor light emitting element can be improved.

Further, according to the present invention, by disposing the semiconductor light emitting element and the second sub-electrode electrically connecting the first sub-electrode and cutting the second sub-electrode when the semiconductor light emitting element is defective, And the electrical and physical connection of the defective semiconductor light emitting element can be disconnected. Therefore, replacement of the defective semiconductor light emitting element can be smoothly performed by replacing only the defective semiconductor light emitting element without rearrangement of the first sub electrode.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.
Fig. 2 is a partially enlarged view of part A of Fig. 1, and Figs. 3a and 3b are cross-sectional views taken along line BB and CC of Fig.
4 is a conceptual diagram showing a flip chip type semiconductor light emitting device of FIG.
FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.
6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.
7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention.
8 is a cross-sectional view taken along the line CC of Fig.
9 is a conceptual diagram showing a vertical semiconductor light emitting device of FIG.
10, 11A, 11B, and 12 are conceptual diagrams illustrating a display device having a repair structure according to the present invention.
13 is a conceptual diagram illustrating a semiconductor light emitting device according to the present invention.
14A and 14B are conceptual diagrams illustrating a display device having a repair structure according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals are used to designate identical or similar elements, and redundant description thereof will be omitted. The suffix "module" and " part "for the components used in the following description are given or mixed in consideration of ease of specification, and do not have their own meaning or role. In the following description of the embodiments of the present invention, a detailed description of related arts will be omitted when it is determined that the gist of the embodiments disclosed herein may be blurred. In addition, it should be noted that the attached drawings are only for easy understanding of the embodiments disclosed in the present specification, and should not be construed as limiting the technical idea disclosed in the present specification by the attached drawings.

It is also to be understood that when an element such as a layer, region or substrate is referred to as being present on another element "on," it is understood that it may be directly on the other element or there may be an intermediate element in between There will be.

The display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation device, a slate PC, , A Tablet PC, an Ultra Book, a digital TV, a desktop computer, and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiments described herein may be applied to a device capable of being displayed, even in the form of a new product to be developed in the future.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.

According to the illustrated example, the information processed in the control unit of the display device 100 may be displayed using a flexible display.

The flexible display includes a display that can be bent, twistable, collapsible, and curlable, which can be bent by an external force. For example, a flexible display can be a display made on a thin, flexible substrate that can be bent, bent, folded or rolled like paper while maintaining the display characteristics of conventional flat panel displays.

In a state where the flexible display is not bent (for example, a state having an infinite radius of curvature, hereinafter referred to as a first state), the display area of the flexible display is flat. In the first state, the display area may be a curved surface in a state of being bent by an external force (for example, a state having a finite radius of curvature, hereinafter referred to as a second state). As shown in the figure, the information displayed in the second state may be time information output on the curved surface. Such visual information is realized by independently controlling the emission of a sub-pixel arranged in a matrix form. The unit pixel means a minimum unit for implementing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as one type of semiconductor light emitting device for converting a current into light. The light emitting diode is formed in a small size, so that it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in detail with reference to the drawings.

FIG. 2 is a partial enlarged view of a portion A of FIG. 1, FIGS. 3 A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2, FIG. 4 is a conceptual view of a flip chip type semiconductor light emitting device of FIG. FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.

Referring to FIGS. 2, 3A and 3B, a display device 100 using a passive matrix (PM) semiconductor light emitting device as a display device 100 using a semiconductor light emitting device is illustrated. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 100 includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and a plurality of semiconductor light emitting devices 150.

The substrate 110 may be a flexible substrate. For example, to implement a flexible display device, the substrate 110 may comprise glass or polyimide (PI). In addition, any insulating material such as PEN (polyethylene naphthalate) and PET (polyethylene terephthalate) may be used as long as it is insulating and flexible. In addition, the substrate 110 may be either a transparent material or an opaque material.

The substrate 110 may be a wiring substrate on which the first electrode 120 is disposed, so that the first electrode 120 may be positioned on the substrate 110.

The insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is located and the auxiliary electrode 170 may be disposed on the insulating layer 160. In this case, a state in which the insulating layer 160 is laminated on the substrate 110 may be one wiring substrate. More specifically, the insulating layer 160 is formed of a flexible material such as polyimide (PI), polyimide (PET), or PEN, and is integrally formed with the substrate 110 to form a single substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150 and is disposed on the insulating layer 160 and corresponds to the position of the first electrode 120. For example, the auxiliary electrode 170 may be in the form of a dot and may be electrically connected to the first electrode 120 by an electrode hole 171 passing through the insulating layer 160. The electrode hole 171 may be formed by filling a via hole with a conductive material.

Referring to these drawings, the conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not limited thereto. For example, a layer having a specific function may be formed between the insulating layer 160 and the conductive adhesive layer 130, or a structure in which the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160 It is also possible. In the structure in which the conductive adhesive layer 130 is disposed on the substrate 110, the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity. To this end, the conductive adhesive layer 130 may be mixed with a substance having conductivity and a substance having adhesiveness. Also, the conductive adhesive layer 130 has ductility, thereby enabling the flexible function in the display device.

As an example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 may be formed as a layer having electrical insulation in the horizontal X-Y direction while permitting electrical interconnection in the Z direction passing through the thickness. Accordingly, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (hereinafter, referred to as a conductive adhesive layer).

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member. When heat and pressure are applied, only a specific part of the anisotropic conductive film has conductivity due to the anisotropic conductive medium. Hereinafter, the anisotropic conductive film is described as being subjected to heat and pressure, but other methods may be used to partially conduct the anisotropic conductive film. In this method, for example, either the heat or the pressure may be applied, or UV curing may be performed.

In addition, the anisotropic conduction medium can be, for example, a conductive ball or a conductive particle. According to the example, in the present example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member. When heat and pressure are applied, only specific portions are conductive by the conductive balls. The anisotropic conductive film may be a state in which a plurality of particles coated with an insulating film made of a polymer material are contained in the core of the conductive material. In this case, the insulating film is broken by heat and pressure, . At this time, the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and the electrical connection in the Z-axis direction is partially formed by the height difference of the mating member adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state in which a plurality of particles coated with a conductive material are contained in the insulating core. In this case, the conductive material is deformed (pressed) to the portion where the heat and the pressure are applied, so that the conductive material becomes conductive in the thickness direction of the film. As another example, it is possible that the conductive material penetrates the insulating base member in the Z-axis direction and has conductivity in the thickness direction of the film. In this case, the conductive material may have a pointed end.

According to the present invention, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of an insulating base member. More specifically, the insulating base member is formed of a material having adhesiveness, and the conductive ball is concentrated on the bottom portion of the insulating base member, and is deformed together with the conductive ball when heat and pressure are applied to the base member So that they have conductivity in the vertical direction.

However, the present invention is not limited thereto. The anisotropic conductive film may be formed by randomly mixing conductive balls into an insulating base member or by forming a plurality of layers in which a conductive ball is placed in a double- ACF) are all available.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which a conductive ball is mixed with an insulating and adhesive base material. In addition, solutions containing conductive particles can be solutions in the form of conductive particles or nanoparticles.

Referring again to FIG. 5, the second electrode 140 is located in the insulating layer 160, away from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed.

After the conductive adhesive layer 130 is formed in a state where the auxiliary electrode 170 and the second electrode 140 are positioned in the insulating layer 160, the semiconductor light emitting device 150 is connected to the semiconductor light emitting device 150 in a flip chip form The semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.

Referring to FIG. 4, the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type semiconductor layer 155 in which a p-type electrode 156, a p-type electrode 156 are formed, an active layer 154 formed on the p-type semiconductor layer 155, And an n-type electrode 152 disposed on the n-type semiconductor layer 153 and the p-type electrode 156 on the n-type semiconductor layer 153 and 154 in the horizontal direction. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 by the conductive adhesive layer 130, and the n-type electrode 152 may be electrically connected to the second electrode 140.

Referring again to FIGS. 2, 3A and 3B, the auxiliary electrode 170 is elongated in one direction, and one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150. For example, the p-type electrodes of the right and left semiconductor light emitting elements may be electrically connected to one auxiliary electrode around the auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 by heat and pressure, and the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 through the p- And only the portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 has conductivity and the semiconductor light emitting device does not have a conductive property because the semiconductor light emitting device is not press- The conductive adhesive layer 130 not only couples the semiconductor light emitting device 150 and the auxiliary electrode 170 and the semiconductor light emitting device 150 and the second electrode 140 but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitute a light emitting element array, and the phosphor layer 180 is formed in the light emitting element array.

The light emitting element array may include a plurality of semiconductor light emitting elements having different brightness values. Each of the semiconductor light emitting devices 150 constitutes a unit pixel and is electrically connected to the first electrode 120. For example, the first electrodes 120 may be a plurality of semiconductor light emitting devices, and the semiconductor light emitting devices may be electrically connected to any one of the plurality of first electrodes.

Also, since the semiconductor light emitting devices are connected in a flip chip form, the semiconductor light emitting devices grown on the transparent dielectric substrate can be used. The semiconductor light emitting devices may be, for example, a nitride semiconductor light emitting device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size.

According to the structure, the barrier ribs 190 may be formed between the semiconductor light emitting devices 150. In this case, the barrier ribs 190 may separate the individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130. For example, by inserting the semiconductor light emitting device 150 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier 190 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, the barrier ribs 190 may be provided separately from the reflective barrier ribs. In this case, the barrier rib 190 may include a black or white insulation depending on the purpose of the display device. When a barrier of a white insulator is used, an effect of enhancing reflectivity may be obtained. When a barrier of a black insulator is used, a contrast characteristic may be increased while having a reflection characteristic.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 180 converts the blue (B) light into the color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting an individual pixel.

That is, a red phosphor 181 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 151 at a position forming a red unit pixel, A green phosphor 182 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 151. [ In addition, only the blue semiconductor light emitting element 151 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel. More specifically, phosphors of one color may be stacked along each line of the first electrode 120. Accordingly, one line in the first electrode 120 may be an electrode for controlling one color. In other words, red (R), green (G), and blue (B) may be arranged in order along the second electrode 140, thereby realizing a unit pixel.

(R), green (G), and blue (B) unit pixels may be implemented by combining the semiconductor light emitting device 150 and the quantum dot QD instead of the fluorescent material. have.

In addition, a black matrix 191 may be disposed between each of the phosphor layers to improve contrast. That is, the black matrix 191 can improve the contrast of light and dark.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied.

5A, each of the semiconductor light emitting devices 150 includes gallium nitride (GaN), indium (In) and / or aluminum (Al) are added together to form a high output light Device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a unit pixel (sub-pixel), respectively. For example, red, green, and blue semiconductor light emitting elements R, G, and B are alternately arranged, and red, green, and blue unit pixels Form a single pixel, through which a full color display can be implemented.

Referring to FIG. 5B, the semiconductor light emitting device may include a white light emitting device W having a yellow phosphor layer for each individual device. In this case, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light emitting element W to form a unit pixel. Further, a unit pixel can be formed by using a color filter in which red, green, and blue are repeated on the white light emitting element W.

Referring to FIG. 5C, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the ultraviolet light emitting element UV. As described above, the semiconductor light emitting device can be used not only for visible light but also for ultraviolet (UV), and can be extended to a form of a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of the upper phosphor .

The semiconductor light emitting device 150 is disposed on the conductive adhesive layer 130 and constitutes a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 150 may be 80 mu m or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

Also, even if a square semiconductor light emitting device 150 having a length of 10 m on one side is used as a unit pixel, sufficient brightness for forming a display device appears. Accordingly, when the unit pixel is a rectangular pixel having a side of 600 mu m and the other side of 300 mu m as an example, the distance of the semiconductor light emitting element becomes relatively large. Accordingly, in such a case, it becomes possible to implement a flexible display device having HD picture quality.

The display device using the semiconductor light emitting device described above can be manufactured by a novel manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG.

6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

The conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed. A first electrode 120, an auxiliary electrode 170, and a second electrode 140 are formed on the wiring substrate, and the insulating layer 160 is formed on the first substrate 110 to form a single substrate (or a wiring substrate) . In this case, the first electrode 120 and the second electrode 140 may be arranged in mutually orthogonal directions. In addition, the first substrate 110 and the insulating layer 160 may include glass or polyimide (PI), respectively, in order to implement a flexible display device.

The conductive adhesive layer 130 may be formed, for example, by an anisotropic conductive film, and an anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is disposed.

A second substrate 112 corresponding to the positions of the auxiliary electrode 170 and the second electrodes 140 and having a plurality of semiconductor light emitting elements 150 constituting individual pixels is disposed on the semiconductor light emitting element 150 Are arranged so as to face the auxiliary electrode 170 and the second electrode 140.

In this case, the second substrate 112 is a growth substrate for growing the semiconductor light emitting device 150, and may be a spire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in units of wafers, the semiconductor light emitting device can be effectively used in a display device by having an interval and a size at which a display device can be formed.

Then, the wiring substrate and the second substrate 112 are thermally bonded. For example, the wiring board and the second substrate 112 may be thermocompression-bonded using an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermocompression bonding. Only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity due to the characteristics of the anisotropic conductive film having conductivity by thermocompression, The device 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and partition walls may be formed between the semiconductor light emitting devices 150.

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO).

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating a wiring substrate on which the semiconductor light emitting device 150 is coupled with silicon oxide (SiOx) or the like.

Further, the method may further include forming a phosphor layer on one surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red phosphor or a green phosphor for converting the blue (B) A layer can be formed on one surface of the device.

The manufacturing method and structure of the display device using the semiconductor light emitting device described above can be modified into various forms. For example, a vertical semiconductor light emitting device may be applied to the display device described above. Hereinafter, the vertical structure will be described with reference to Figs. 5 and 6. Fig.

In the modifications or embodiments described below, the same or similar reference numerals are given to the same or similar components as those of the previous example, and the description is replaced with the first explanation.

8 is a cross-sectional view taken along the line DD of FIG. 7, and FIG. 9 is a conceptual view illustrating a vertical semiconductor light emitting device of FIG. 8. FIG. 7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, to be.

Referring to these drawings, the display device may be a display device using a passive matrix (PM) vertical semiconductor light emitting device.

The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and a plurality of semiconductor light emitting devices 250.

The substrate 210 is a wiring substrate on which the first electrode 220 is disposed. The substrate 210 may include polyimide (PI) to implement a flexible display device. In addition, any insulating and flexible material may be used.

The first electrode 220 is disposed on the substrate 210 and may be formed as a long bar electrode in one direction. The first electrode 220 may serve as a data electrode.

A conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is located. The conductive adhesive layer 230 may be formed of an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing a conductive particle, or the like, as in a display device using a flip chip type light emitting device. ) And the like. However, the present embodiment also exemplifies the case where the conductive adhesive layer 230 is realized by the anisotropic conductive film.

If the semiconductor light emitting device 250 is connected to the semiconductor light emitting device 250 by applying heat and pressure after the anisotropic conductive film is positioned in a state where the first electrode 220 is positioned on the substrate 210, And is electrically connected to the electrode 220. In this case, the semiconductor light emitting device 250 may be disposed on the first electrode 220.

As described above, the electrical connection is generated because heat and pressure are applied to the anisotropic conductive film to partially conduct in the thickness direction. Therefore, in the anisotropic conductive film, it is divided into a portion 231 having conductivity in the thickness direction and a portion 232 having no conductivity.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 realizes electrical connection as well as mechanical bonding between the semiconductor light emitting element 250 and the first electrode 220.

Thus, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 250 may be 80 μm or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 electrically connected to the vertical semiconductor light emitting device 250 are disposed between the vertical semiconductor light emitting devices in a direction crossing the longitudinal direction of the first electrode 220.

9, the vertical type semiconductor light emitting device includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255 An n-type semiconductor layer 253 formed on the active layer 254 and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom may be electrically connected to the first electrode 220 by the conductive adhesive layer 230, and the n-type electrode 252 located at the top may be electrically connected to the second electrode 240 As shown in FIG. Since the vertical semiconductor light emitting device 250 can arrange the electrodes up and down, it has a great advantage that the chip size can be reduced.

Referring to FIG. 8 again, a phosphor layer 280 may be formed on one side of the semiconductor light emitting device 250. For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and a phosphor layer 280 for converting the blue (B) . In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 251 at a position forming a red unit pixel, A green phosphor 282 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 251. In addition, only the blue semiconductor light emitting element 251 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied to a display device to which a flip chip type light emitting device is applied, as described above.

The second electrode 240 is located between the semiconductor light emitting devices 250 and electrically connected to the semiconductor light emitting devices 250. For example, the semiconductor light emitting devices 250 may be disposed in a plurality of rows, and the second electrode 240 may be disposed between the columns of the semiconductor light emitting devices 250.

The second electrode 240 may be positioned between the semiconductor light emitting devices 250 because the distance between the semiconductor light emitting devices 250 forming the individual pixels is sufficiently large.

The second electrode 240 may be formed as a long bar-shaped electrode in one direction and may be disposed in a direction perpendicular to the first electrode.

The second electrode 240 and the semiconductor light emitting device 250 may be electrically connected by a connection electrode protruding from the second electrode 240. More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a part of the ohmic electrode by printing or vapor deposition. Accordingly, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 can be electrically connected.

According to the example, the second electrode 240 may be disposed on the conductive adhesive layer 230. A transparent insulating layer (not shown) containing silicon oxide (SiOx) or the like may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. In addition, the second electrode 240 may be formed spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as ITO (Indium Tin Oxide) is used for positioning the second electrode 240 on the semiconductor light emitting device 250, the problem that the ITO material has poor adhesion with the n-type semiconductor layer have. Accordingly, the present invention has an advantage in that the second electrode 240 is positioned between the semiconductor light emitting devices 250, so that a transparent electrode such as ITO is not used. Therefore, the light extraction efficiency can be improved by using a conductive material having good adhesiveness with the n-type semiconductor layer as a horizontal electrode without being bound by transparent material selection.

According to the structure, the barrier ribs 290 may be positioned between the semiconductor light emitting devices 250. That is, the barrier ribs 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 forming the individual pixels. In this case, the barrier ribs 290 may separate the individual unit pixels from each other, and may be formed integrally with the conductive adhesive layer 230. For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier ribs 290 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, as the partition 190, a reflective barrier may be separately provided. The barrier ribs 290 may include black or white insulators depending on the purpose of the display device.

If the second electrode 240 is directly disposed on the conductive adhesive layer 230 between the semiconductor light emitting devices 250, the barrier ribs 290 may be formed between the vertical semiconductor light emitting device 250 and the second electrode 240 As shown in FIG. Therefore, individual unit pixels can be formed with a small size by using the semiconductor light emitting device 250, and the distance between the semiconductor light emitting device 250 can be relatively large enough so that the second electrode 240 can be electrically connected to the semiconductor light emitting device 250 ), And it is possible to realize a flexible display device having HD picture quality.

In addition, according to the present invention, a black matrix 291 may be disposed between the respective phosphors to improve the contrast. That is, this black matrix 291 can improve the contrast of light and dark.

As described above, the semiconductor light emitting device 250 is disposed on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. Therefore, a full color display in which red (R), green (G), and blue (B) unit pixels form one pixel can be realized by the semiconductor light emitting device.

On the other hand, in a display device having a semiconductor light emitting element, a defect may exist in at least a part of the semiconductor light emitting element. The defective semiconductor light emitting device may be called a NG cell. In the present invention, a semiconductor light emitting device structure having a new structure for more easily replacing a semiconductor light emitting device corresponding to a NG cell, and a display device Lt; / RTI >

Particularly, the present invention proposes a wiring structure of a display device which can easily replace a semiconductor light emitting element corresponding to a NG cell. Particularly, in the display device according to the present invention, the electrical connection between the wiring electrode provided in the display device and the NG cell corresponding to the defective light emitting portion is disconnected, and the semiconductor light emitting element corresponding to the NG cell is replaced with the defective semiconductor light emitting element Repair repair method.

Here, the light emitting portion may mean one semiconductor light emitting element.

Hereinafter, a display device to which a replacement repair system is applied will be described in detail with reference to the accompanying drawings. Figs. 10, 11A, 11B and 12 are enlarged views of a portion A of Fig. 1 for explaining a display device according to the present invention. 13 is a conceptual diagram for explaining a semiconductor light emitting device according to the present invention.

10, 11A, 11B, and 12, a display device 1000 using a passive matrix (PM) type semiconductor light emitting device as a display device 1000 using a semiconductor light emitting device is illustrated. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

A display device 1000 according to the present invention includes a substrate (or a wiring board 1010), a first electrode unit 1020, an insulating layer 1030, a second electrode unit 1040, and a plurality of semiconductor light emitting devices 1050 .

A substrate 1010 is a wiring substrate on which a first electrode unit 1020, a plurality of semiconductor light emitting devices 1050, an insulating layer 1030 and a second electrode 1040 are disposed. Polyimide (PI). In addition, any insulating and flexible material may be used.

As shown, the first electrode portion 1020 extends along the first direction on the substrate 1010, and may include a plurality of electrode lines.

A plurality of semiconductor light emitting devices 1050 are disposed on the first electrode unit 1020 and an electrical connection path is formed between the first electrode unit 1020 and the plurality of semiconductor light emitting devices 1050.

In the present invention, the first electrode unit 1020 serves as a common electrode and the common electrode line, and the second electrode unit 1040 serves as a data electrode and a data line DL. It goes without saying that the present invention may also be made to play the opposite role.

Further, as shown in the drawing, the insulating layer 1030 covers at least a part of the first electrode part 1020 and is configured to fill the space between the plurality of semiconductor light emitting elements 1050.

The insulating layer 1030 is formed to cover a portion of the first electrode portion 1020 where the semiconductor light emitting elements 1050 are not disposed.

The insulating layer 1030 is formed so as to cover an area of the substrate 1010 that is not covered with the first electrode part 1020.

The insulating layer 1030 may be disposed on the substrate 1010 where the first electrode portion 1020 is located and at least a portion of the second electrode portion 1040 may be formed in the insulating layer 1030 . In this case, a state in which the insulating layer 1030 is laminated on the substrate 1010 may be one wiring substrate. More specifically, the insulating layer 1030 may be formed of a flexible material such as polyimide (PI), polyimide (PET), or PEN, and may be integrally formed with the substrate 1010 to form a single substrate.

The second electrode unit 1040 is electrically connected to the plurality of semiconductor light emitting devices 1050 on the insulating layer 1030 and includes a first sub electrode 1040a, a second sub electrode 1040b, Electrode 1040c.

More specifically, the first sub-electrode 1040a extends along a second direction perpendicular to the first direction in which the first electrode portion extends, and is formed to be disposed on the insulating layer 1030.

The first sub-electrode 1040a includes a plurality of electrode lines extending in the second direction, and the plurality of electrode lines are electrically connected to the substrate 1010, the first electrode 1020, the insulating layer 1030, And are disposed so as to be spaced apart from the plurality of semiconductor light emitting elements 1050 with reference to a width direction that is not sequentially arranged in the thickness direction.

Next, the second sub-electrode 1040b extends from the first sub-electrode 1040a and is electrically connected to the plurality of semiconductor light-emitting devices.

Although not shown, a driving unit (not shown) for supplying power and data is physically connected to the first sub-electrode 1040a, and the first sub-electrode 1040a is connected to the second sub-electrode 1040b The first and second semiconductor light emitting devices may form an electrical connection path through the plurality of semiconductor light emitting devices.

That is, the second sub-electrode 1040b may include a plurality of electrode lines that electrically connect each of the plurality of semiconductor light emitting devices 1050 with the first sub-electrode 1040a.

The second sub-electrode 1040b includes a first extending portion 1040b-1 extending from the first sub-electrode 1040a toward each of the plurality of semiconductor light emitting elements, and a second extending portion 1040b- And a second extension portion 1040b-2 that is bent at the first semiconductor light emitting portion 1040b-1 and electrically connected to the plurality of semiconductor light emitting elements. Meanwhile, the structure of the second sub-electrode 1040b may be variously modified.

Next, the third sub-electrode 1040c overlaps with at least a part of the second sub-electrode 1040a and covers one surface of the plurality of semiconductor light-emitting devices. The third sub-electrode 1040c may be formed of a light-transmitting conductive material to improve the aperture ratio of the semiconductor light emitting devices.

The third sub-electrode 1040c is a transparent electrode that covers one side of the semiconductor light emitting devices to improve the electrical connection between the semiconductor light emitting devices 1050 and the first electrode unit 1040, Can be improved.

11A and 11B, the third sub-electrode 1040c is shown as being spaced apart from one surface of the conductive type semiconductor layer 1056 of the semiconductor light emitting device. However, this is a conceptual view, One surface of the electrode 1040c and the conductive semiconductor layer 1056 of the semiconductor light emitting element are in contact with each other. The semiconductor light emitting device includes the third sub electrode 1040c stacked on one side of the conductive type semiconductor layer 1056 and the second sub electrode 1040b extending to the first sub electrode 1040a. And may be electrically connected to a driving unit (not shown) through an electrical connecting passage.

11B, an adhesive layer 1020-1 made of an adhesive material is further disposed between the semiconductor light emitting element 1050 and the first electrode unit 1020, and the semiconductor light emitting element 1050 and the electrode unit 1020 ) Can be physically bonded.

According to the repair repair method of the present invention, after the first sub-electrode 1040a and the second sub-electrode 1040b are electrically connected to the semiconductor light emitting devices 1050, .

When a defective semiconductor light emitting device is detected, the second sub-electrode 1040b is cut off, so that the electrical connection between the semiconductor light emitting device and the first sub-electrode 1040a can be cut off.

For example, as shown in FIG. 12, when a semiconductor light emitting element that was disposed before the first semiconductor light emitting element 1050a is disposed has a defect, the semiconductor light emitting element in which a defect exists is disposed in a region where the semiconductor light emitting element was disposed The second sub-electrode 1040b 'may be in a cut state.

As another example, the second sub-electrode itself may exist while being removed from the display device 1000.

On the other hand, when the second sub-electrode 1040b 'is cut off as shown in the figure, there is no electrical connection path between the first sub-electrode 1040a and the first semiconductor light emitting device 1050a replaced. Thus, in this case, the third sub-electrode 1040c-1 extends from the first sub-electrode 1040a and is formed to cover one electrode of the first semiconductor light emitting device 1050a and the conductive semiconductor layer .

As another example, for electrical connection between the first semiconductor light emitting device 1050a and the first sub electrode 1040a, a second sub electrode may be additionally disposed (not shown).

Meanwhile, in the display device according to the above example, after the first and second sub-electrodes 1040a and 1040b are electrically connected to the semiconductor light emitting devices first, it is checked whether there is a defective semiconductor light emitting device, The defective semiconductor light emitting device can be manufactured by replacing a new semiconductor light emitting device. In this case, the third sub-electrode 1040c which is a transparent electrode can be disposed after the replacement of the new semiconductor light emitting element is completed.

Alternatively, in the display device according to the present invention, after forming the electrical connection paths between the first, second, and third sub-electrodes 1040a, 1040b, and 1040c and the semiconductor light emitting devices, Can be checked.

13, the semiconductor light emitting device 1050 according to the present invention includes a first conductivity type semiconductor layer 1053, a second conductivity type semiconductor layer 1055, first and second conductivity type semiconductor layers 1053, And an active layer 1054 formed between the layers 1053 and 1055. The semiconductor light emitting device 1050 further includes a first conductive electrode 1052 formed on one surface of the first conductive semiconductor layer 1053 and electrically connected to the first electrode unit 1020, And a second conductive electrode 1056 formed on one surface of the second conductive semiconductor layer 1055 and electrically connected to the second electrode unit 1040.

As shown in the drawing, the first and second conductive electrodes 1052 and 1056 are disposed on both sides with respect to the active layer 1054. The first sub-electrode 1040a of the second electrode unit 1040 is disposed on the insulating layer 1030 and is spaced apart from the second conductive electrode 1056, It is possible to prevent the semiconductor light emitting element from being covered.

The second sub electrode 1040b of the second electrode unit 1040 covers at least a part of the second conductive electrode 1056. The first sub electrode and the second conductive electrode Connect electrically.

Here, the second conductive type electrode 1056 covers a part of the second conductive type semiconductor layer 1055, and the second conductive type semiconductor layer 1054 adjacent to the first sub- And may be located on one side.

The third sub-electrode 1040c of the second electrode unit 1040 may include the second conductive type electrode 1056 and the second conductive type semiconductor layer 1055 of the second conductive type semiconductor layer 1055, So as to cover the rest of the area not covered by the protective layer.

Further, the phosphor layer 1080 may be disposed on the outer surface of the semiconductor light emitting devices 1050. For example, the light emitting portion included in the semiconductor light emitting elements 1050 is a blue semiconductor light emitting element for emitting blue (B) light, and the phosphor layer 1080 converts the blue (B) Function. The phosphor layer 1080 may include at least one of a red phosphor or a green phosphor constituting an individual pixel.

That is, a red phosphor capable of converting blue light into red (R) light can be stacked on the semiconductor light emitting elements arranged along any one row at a position forming a red unit pixel. A green phosphor capable of converting blue light into green (G) light can be laminated on other semiconductor light emitting elements disposed along a certain row at a position forming a green unit pixel. Further, only the blue semiconductor light emitting element can be used solely in the portion constituting the blue unit pixel. In this case, semiconductor light emitting elements corresponding to red (R), green (G), and blue (B) can form one pixel.

However, the present invention is not necessarily limited thereto. Instead of the phosphor, the semiconductor light emitting device 1050 and the quantum dot QD may be combined to form unit pixels of red (R), green (G), and blue (B) have.

Further, a black matrix 1091 may be disposed between the respective phosphor layers to improve the contrast. That is, the black matrix 1091 can improve the contrast of light and dark. However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied.

In the above embodiments, the second electrode portion has been described as an example including the first sub-electrode, the second sub-electrode, and the third sub-electrode. In the display device according to the present invention, the configuration of the second electrode part may be variously modified. In particular, the second electrode part may include only the first and second sub-electrodes. Hereinafter, With reference to the drawings.

14A and 14B are conceptual diagrams illustrating a display device having a repair structure according to another embodiment of the present invention.

A display device 2000 according to another exemplary embodiment of the present invention includes a substrate (or a wiring board 2010), a first electrode portion 2020, an insulating layer 2030, a second electrode portion 2040, 2050).

The substrate 2010 is a wiring substrate on which a first electrode unit 2020, a plurality of semiconductor light emitting devices 2050, an insulating layer 2030 and a second electrode 2040 are disposed. Polyimide (PI). In addition, any insulating and flexible material may be used.

As shown, the first electrode portion 2020 extends along the first direction on the substrate 2010, and may include a plurality of electrode lines.

A plurality of semiconductor light emitting devices 2050 are disposed on the first electrode unit 2020 and an electrical connection path is formed between the first electrode unit 2020 and the plurality of semiconductor light emitting devices 2050.

In the present invention, the first electrode unit 2020 serves as a common electrode and the common power line, and the second electrode unit 2040 serves as a data electrode and a data line DL. It goes without saying that the present invention may also be made to play the opposite role.

Further, as shown in the drawing, the insulating layer 2030 covers at least a part of the first electrode unit 2020, and is configured to fill the spaces between the plurality of semiconductor light emitting devices 2050.

The insulating layer 2030 is formed to cover a portion of the first electrode portion 2020 where the semiconductor light emitting elements 2050 are not disposed.

The insulating layer 2030 is formed so as to cover the region of the substrate 2010 that is not covered with the first electrode portion 2020. [

The insulating layer 2030 may be disposed on the substrate 2010 on which the first electrode portion 2020 is located and at least a portion of the second electrode portion 2040 may be formed in the insulating layer 2030 . In this case, a state in which the insulating layer 2030 is laminated on the substrate 2010 may be one wiring substrate. More specifically, the insulating layer 2030 may be formed of a flexible material such as polyimide (PI), polyimide (PET), or PEN, and may be integrally formed with the substrate 2010 to form a single substrate.

The second electrode unit 2040 is electrically connected to the plurality of semiconductor light emitting devices 2050 on the insulating layer 2030 and includes a first sub electrode 2040a and a second sub electrode 2040b.

More specifically, the first sub-electrode 2040a extends along a second direction perpendicular to the first direction in which the first electrode unit 2020 extends, and is formed to be disposed on the insulating layer 2030.

The second sub-electrode 2040a includes a plurality of electrode lines extending in the second direction, and the plurality of electrode lines are connected to the substrate 2010, the first electrode 2020, the insulating layer 2030, And are arranged so as to be spaced apart from the plurality of semiconductor light emitting elements 2050 with reference to a width direction that is not sequentially arranged in the thickness direction.

Next, the second sub-electrode 2040b includes a first portion 2040b-2 extending from the first sub-electrode 2040a and a second portion 2040b covering the semiconductor light-emitting device.

The second sub-electrode 2040b extends from the first sub-electrode, electrically connects the plurality of semiconductor light-emitting devices to the first sub-electrode, and is formed of a light-transmitting conductive material.

Although not shown, a driving unit (not shown) for supplying power and data is physically connected to the second sub-electrode 2040a, and the second sub-electrode 2040a is connected to the second sub- The first and second semiconductor light emitting devices may form an electrical connection path through the plurality of semiconductor light emitting devices.

That is, the second sub-electrode 2040b may include a plurality of electrode lines electrically connecting each of the plurality of semiconductor light emitting devices 1050 with the first sub-electrode 2040a.

The second sub-electrode 2040b includes a first portion 2040b-1 extending from the first sub-electrode 2040a toward each of the plurality of semiconductor light-emitting elements, and a second portion 2040b- And a second portion 2040b-2 formed to cover the plurality of semiconductor light emitting elements. Meanwhile, the structure of the second sub-electrode 1040b may be variously modified.

The first portion 2040b-1 of the second sub-electrode 2040b, b,

The second portion 2040b-2 of the second sub-electrode 2040b covers one surface of the plurality of semiconductor light emitting devices and is formed of a light-transmitting conductive material to improve the aperture ratio of the semiconductor light emitting devices.

The second portion 2040b-2 of the second sub-electrode 2040b is a transparent electrode so as to cover one surface of the semiconductor light emitting devices. Thus, the semiconductor light emitting devices 2050 and the first electrode portion 2020 are formed, The resistance value can be improved.

According to the repair repair method of the present invention, after the first sub-electrode 2040a and the second sub-electrode 2040b are electrically connected to the semiconductor light emitting devices 2050, .

When a defective semiconductor light emitting element is detected, the first portion 2040b-1 of the second sub electrode 2040b is cut so that the semiconductor light emitting element having the same function as the first portion 2040b- It is possible to block the connection.

On the other hand, when the first portion 2040b-1 of the second sub-electrode 2040b is cut off as shown in the figure, there is no electrical connection path between the first sub-electrode 2040a and the replaced first semiconductor light-emitting device . Accordingly, in this case, a new connection portion can be disposed to electrically connect the semiconductor light emitting element and the first sub-electrode 2040a.

According to the present invention, since the first sub-electrode is disposed apart from the semiconductor light emitting device, and the second sub-electrode electrically connected to the first sub-electrode is formed on the semiconductor light emitting device, The semiconductor light emitting element can be prevented from being covered by the opaque first sub electrode. Therefore, since the light emitting region of the semiconductor light emitting element is covered by the second sub electrode which is a transparent electrode, the aperture ratio of the semiconductor light emitting element can be improved.

Further, according to the present invention, by disposing the semiconductor light emitting element and the second sub-electrode electrically connecting the first sub-electrode and cutting the second sub-electrode when the semiconductor light emitting element is defective, And the electrical and physical connection of the defective semiconductor light emitting element can be disconnected. Therefore, replacement of the defective semiconductor light emitting element can be smoothly performed by replacing only the defective semiconductor light emitting element without rearrangement of the first sub electrode.

Claims (10)

Board;
A first electrode portion disposed on the substrate and extending along a first direction;
A plurality of semiconductor light emitting elements electrically connected to the first electrode unit;
An insulating layer covering at least a part of the first electrode part and filling the space between the plurality of semiconductor light emitting elements; And
And a second electrode portion electrically connected to the plurality of semiconductor light emitting elements on the insulating layer,
Wherein the second electrode unit comprises:
A first sub-electrode disposed on the insulating layer and extending along a second direction perpendicular to the first direction;
A second sub-electrode extending from the first sub-electrode and electrically connected to the plurality of semiconductor light-emitting devices; And
And a third sub-electrode overlapping at least a part of the second sub-electrode and covering one surface of the plurality of semiconductor light-emitting devices, the third sub-electrode being formed of a light-transmitting conductive material. The method according to claim 1,
Wherein each of the plurality of semiconductor light emitting elements includes:
First and second conductivity type semiconductor layers;
An active layer formed between the first and second conductive semiconductor layers;
A first conductive type electrode formed on one surface of the first conductive type semiconductor layer and electrically connected to the first electrode portion; And
And a second conductive type electrode formed on one side of the second conductive type semiconductor layer and electrically connected to the second electrode type,
Wherein the first and second conductive electrodes are disposed on both sides with respect to the active layer,
Wherein the first sub-electrode is disposed on the insulating layer and is spaced apart from the second conductive-type electrode. The plasma display apparatus of claim 2, wherein the second sub-
Wherein the second conductive type electrode is formed to cover at least a part of the second conductive type electrode, and electrically connects the first sub-electrode and the second conductive type electrode. The plasma display panel of claim 3,
Wherein the second conductivity type semiconductor layer is formed to cover a part of the second conductivity type semiconductor layer and is positioned on one side of the second conductivity type semiconductor layer adjacent to the first sub-electrode. The plasma display apparatus of claim 4, wherein the third sub-
The second conductive type electrode,
And the remaining portion of the second conductivity type semiconductor layer not covered with the second conductive type electrode is covered. The plasma display apparatus according to claim 1, wherein the second sub-
And a plurality of electrode lines electrically connecting each of the plurality of semiconductor light emitting devices to the first sub-electrode. The method according to claim 6,
Wherein at least some of the plurality of electrode lines are cut so as to block an electrical connection path. Board;
A first electrode portion disposed on the substrate and extending along a first direction;
A plurality of semiconductor light emitting elements electrically connected to the first electrode unit;
An insulating layer covering at least a part of the first electrode part and filling the space between the plurality of semiconductor light emitting elements; And
And a second electrode portion electrically connected to the plurality of semiconductor light emitting elements on the insulating layer,
Wherein the second electrode unit comprises:
A first sub-electrode spaced apart from the plurality of semiconductor light emitting devices on the insulating layer;
And a second sub-electrode extending from the first sub-electrode and electrically connecting the plurality of semiconductor light emitting devices to the first sub-electrode, the second sub-electrode being formed of a light-transmitting conductive material. The plasma display apparatus of claim 8, wherein the first sub-
Extending along a second direction perpendicular to the first direction,
The second sub-
A line electrode connected to the first sub-electrode and extending along the second direction;
And a protruding electrode protruding from the line electrode toward the plurality of semiconductor light emitting elements spaced apart from the first sub-electrode. 10. The method of claim 9,
Wherein the protruding electrode covers one surface of the semiconductor light emitting element.

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