KR102169819B1 - Display device using semiconductor light emitting device - Google Patents

Abstract

The present invention provides a wiring board including a first substrate layer and a second substrate layer, a conductive adhesive layer covering the wiring board, and a plurality of semiconductors coupled to the conductive adhesive layer and electrically connected to the first electrode and the second electrode. Including light emitting devices, wherein the first electrode is disposed on the first substrate layer, the second substrate layer has one surface facing the conductive adhesive layer and the other surface covering the first electrode, and the second substrate layer Provides a display device, characterized in that the auxiliary electrode and the second electrode electrically connected to the first electrode are disposed on one surface of the.

Description

Display device using a semiconductor light emitting device {DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING DEVICE}

The present invention relates to a display device, and more particularly, to a display device using a semiconductor light emitting device.

In recent years, in the field of display technology, a display device having excellent characteristics such as thin and flexible has been developed. In contrast, major displays currently commercially available are represented by LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes).

However, in the case of LCD, there is a problem that the reaction time is not fast and it is difficult to implement the flexible, and in the case of AMOLED, there is a vulnerability that the lifespan is short, the mass production yield is not good, and the degree of flexibility is weak.

On the other hand, Light Emitting Diode (LED) is a well-known semiconductor light-emitting device that converts current into light. Starting with the commercialization of red LEDs using GaAsP compound semiconductors in 1962, information along with GaP:N series green LEDs It has been used as a light source for display images in electronic devices including communication devices. Accordingly, a method for solving the above problem may be proposed by implementing a flexible display using the semiconductor light emitting device.

In addition, a structure of a flexible display capable of improving manufacturing reliability of a semiconductor light emitting device may be conceived.

An object of the present invention is to provide a flexible display device of a new type different from the conventional one.

An object of the present invention is to provide a structure for improving the yield of a display device in which a semiconductor light emitting device is implemented as a unit pixel.

In order to achieve such a problem of the present invention, the display device according to the present invention is coupled to a wiring board on which an electrode having a plurality of electrode lines is disposed, a conductive adhesive layer connected to the wiring board, and the conductive adhesive layer. , A plurality of semiconductor light emitting devices at least partially electrically connected to the electrode, the plurality of electrode lines are connected to a connection wiring connecting the plurality of semiconductor light emitting devices to a driving unit, and among the plurality of electrode lines At least one is characterized in that the electrical connection is disconnected so that the driving signal of the driving unit is blocked from being transmitted to the semiconductor light emitting device.

In an embodiment, the semiconductor light emitting devices form a plurality of rows, and each of the plurality of rows is arranged to correspond to each of the plurality of electrode lines.

In an embodiment, the plurality of electrode lines are provided in a larger number than the number of electrode lines that transmit the driving signal to pixels of a display panel including the plurality of semiconductor light emitting devices.

In an exemplary embodiment, at least some of the plurality of semiconductor light emitting devices form unit pixels emitting N colors, and at least N+1 electrode lines are provided for each unit pixel.

In an embodiment, the plurality of semiconductor light emitting devices are arranged in a matrix structure, and semiconductor light emitting devices corresponding to R, G, and B among the semiconductor light emitting devices arranged in the same row while being arranged in different columns are each unit pixel. It is characterized by forming.

In an embodiment, at least one of the plurality of light emitting devices included in each unit pixel is characterized in that the driving signal transmission path to the driving unit is blocked by the disconnection of the electrical connection.

In an embodiment, at least one semiconductor light emitting device in which a driving signal transmission path with the driver is blocked and semiconductor light emitting devices sharing an electrode line are limited in light emission by disconnection of the electrical connection.

In an embodiment, the shared electrode line includes: a line portion disposed to face the semiconductor light emitting devices and formed along one direction; And a connection part extending from the line part to be connected to the connection wiring and configured to cut off the driving signal transmission path.

In an embodiment, each of the unit pixels may further include a semiconductor light emitting device having limited light emission in addition to the semiconductor light emitting devices corresponding to R, G, and B.

In an embodiment, a plurality of different electrode lines are connected to each unit pixel formed by at least a portion of the plurality of semiconductor light emitting devices, and at least one of the plurality of different electrode lines is connected to the connection wiring. And a base portion and first and second extension portions extending from a plurality of portions of the base portion and disposed in parallel with each other.

In an embodiment, one of the first and second extension parts is characterized in that the electrical connection is cut off.

In an embodiment, a plurality of connection wires connected to some of the plurality of different electrode lines are disposed on both sides of the connection wire connected to the base.

In an embodiment, each of the plurality of electrode lines is arranged in parallel with a row formed by the semiconductor light emitting devices and connected to a connection part connected to the semiconductor light emitting device and the connection wiring, and a plurality of lines extending from the connection part And, it characterized in that it comprises a connecting portion having a cross line connecting at least a portion of the plurality of lines in a direction crossing the plurality of lines.

In an embodiment, the plurality of electrode lines are short-connected to each other for every N electrode lines, and at least some of the short connections are disconnected so that N-1 electrode lines are used as R, G, and B data lines. It is characterized by being.

In an embodiment, the at least one electrode line with the electrical connection disconnected is in a state in which the driving signal of the driving unit can be transmitted to the plurality of semiconductor light emitting devices through the plurality of electrode lines, and the It is characterized in that the connection path with the driving unit is cut off.

In an embodiment, the electrode line whose connection path with the driver is disconnected, the electrode line whose connection path with the driver is disconnected, has more damaged semiconductor light emitting elements among electrically connected semiconductor light emitting elements than other adjacent electrode lines. It features.

In an embodiment, the electrode line in which the connection path with the driver is cut is determined based on the number of damaged semiconductor light emitting devices.

The display device according to the present invention includes a wiring board on which an electrode is disposed, a conductive adhesive layer covering the wiring board, and a plurality of unit pixels which are bonded to the conductive adhesive layer and each include a plurality of semiconductor light emitting devices to emit R, G, and B light. Including, wherein the plurality of unit pixels are formed to be electrically connected to the electrode and are formed to implement light emission of the R, G, B except at least one of a plurality of semiconductor light emitting devices included in each unit pixel. It features.

In an embodiment, a plurality of electrode lines are connected to each of the plurality of unit pixels, at least some of the plurality of electrode lines are short-connected to each other, and the plurality of electrode lines are formed of the R, G, and B lines. At least some of the short connections are disconnected to be used as a data line.

In an embodiment, the plurality of electrode lines are short-connected to each other for every N electrode lines, and as at least a part of the short-connection is disconnected, N-1 electrode lines are connected to the data of the R, G, B It is characterized by being used as a line.

According to the present invention having the configuration as described above, by limiting the light emission of the LED array containing a large number of defective semiconductor light emitting elements, it is possible to improve the yield of the display panel and at the same time, the conductive adhesive layer has ductility. A display device capable of rolling may be implemented.

1 is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting device of the present invention.
2 is a partially enlarged view of portion A of FIG. 1, and FIGS. 3A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2.
4 is a conceptual diagram showing the flip chip type semiconductor light emitting device of FIG. 3A.
5A to 5C are conceptual diagrams showing various forms of implementing colors in relation to a flip chip type semiconductor light emitting device.
6 is a cross-sectional view showing a method of manufacturing a display device using the semiconductor light emitting device of the present invention.
7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention.
8 is a cross-sectional view taken along the line CC of FIG. 7.
9 is a conceptual diagram illustrating the vertical semiconductor light emitting device of FIG. 8.
FIG. 10 is an enlarged view of part A of FIG. 1 for explaining another embodiment of the present invention, FIG. 11A is a cross-sectional view taken along BB of FIG. 10, and FIGS. 11B, 11C and 11D are other embodiments. Cross-sectional views for explaining.
12A, 12B and 12C are conceptual diagrams showing various forms of implementing colors in relation to a flip chip type semiconductor light emitting device to which the present invention is applied.
13 is a flowchart illustrating a method of manufacturing a display device according to the present invention.
14 is a cross-sectional view showing a method of manufacturing a display device using the semiconductor light emitting device of the present invention.
15A, 15B, and 15C are conceptual diagrams for describing FIG. 13.
16 is an enlarged view of part A of FIG. 1 for explaining another embodiment of the present invention,
17 is a cross-sectional view taken along FF of FIG. 16;

Hereinafter, exemplary embodiments disclosed in the present specification will be described in detail with reference to the accompanying drawings, but identical or similar elements are denoted by the same reference numerals regardless of reference numerals, and redundant descriptions thereof will be omitted. The suffixes "module" and "unit" for components used in the following description are given or used interchangeably in consideration of only the ease of preparation of the specification, and do not have meanings or roles that are distinguished from each other by themselves. In addition, in describing the embodiments disclosed in the present specification, when it is determined that a detailed description of related known technologies may obscure the subject matter of the embodiments disclosed in the present specification, the detailed description will be omitted. In addition, it should be noted that the accompanying drawings are for easy understanding of the embodiments disclosed in the present specification and should not be construed as limiting the technical idea disclosed in the present specification by the accompanying drawings.

Also, when an element such as a layer, region or substrate is referred to as being “on” another component, it will be understood that it may exist directly on the other element or there may be intermediate elements between them. There will be.

Display devices described herein include a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistants (PDA), a portable multimedia player (PMP), a navigation system, and a Slate PC. , Tablet PC, Ultra Book, digital TV, desktop computer, etc. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiment described in the present specification may be applied to a display capable device even in a new product type to be developed later.

1 is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting device of the present invention.

As illustrated, information processed by the controller of the display apparatus 100 may be displayed using a flexible display.

Flexible displays include displays that can be bent, bent, twistable, foldable, and rollable by external force. For example, the flexible display may be a display manufactured on a thin and flexible substrate that can be bent, bent, foldable or rolled like paper while maintaining the display characteristics of a conventional flat panel display.

In a state in which the flexible display is not bent (for example, a state having an infinite radius of curvature, hereinafter referred to as a first state), the display area of the flexible display becomes a flat surface. In a state that is bent by an external force in the first state (for example, a state having a finite radius of curvature, hereinafter referred to as a second state), the display area may be a curved surface. As illustrated, the information displayed in the second state may be visual information output on a curved surface. This visual information is implemented by independently controlling light emission of sub-pixels arranged in a matrix form. The unit pixel means a minimum unit for implementing one color formed by a combination of R, G, and B.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is illustrated as a kind of semiconductor light emitting device that converts current into light. The light emitting diode is formed in a small size, and through this, it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in more detail with reference to the drawings.

FIG. 2 is a partially enlarged view of part A of FIG. 1, FIG. 3 is a cross-sectional view taken along line BB of FIG. 2, and FIG. 4 is a conceptual diagram illustrating the flip chip type semiconductor light emitting device of FIG. 3, and FIGS. 5A to 5C Are conceptual diagrams showing various forms of implementing colors in relation to a flip chip type semiconductor light emitting device.

2, 3A and 3B, a display device 100 using a passive matrix (PM) type semiconductor light emitting device is illustrated as a display device 100 using a semiconductor light emitting device. However, the example described below is applicable to an active matrix (AM) type semiconductor light emitting device.

The display device 100 includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and a plurality of semiconductor light emitting devices 150.

The substrate 110 may be a flexible substrate. For example, in order to implement a flexible display device, the substrate 110 may include glass or polyimide (PI). In addition, any material such as polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) may be used as long as it has insulation and is flexible. In addition, the substrate 110 may be a transparent material or an opaque material.

The substrate 110 may be a wiring board on which the first electrode 120 is disposed, and thus the first electrode 120 may be positioned on the substrate 110.

As illustrated, the insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is located, and the auxiliary electrode 170 may be disposed on the insulating layer 160. In this case, a state in which the insulating layer 160 is stacked on the substrate 110 may be a single wiring board. More specifically, the insulating layer 160 is made of an insulating and flexible material such as polyimide (PI), PET, and PEN, and may be formed integrally with the substrate 110 to form a single substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150, and is positioned on the insulating layer 160 and is disposed corresponding to the position of the first electrode 120. For example, the auxiliary electrode 170 has a dot shape and may be electrically connected to the first electrode 120 through an electrode hole 171 penetrating through the insulating layer 160. The electrode hole 171 may be formed by filling a via hole with a conductive material.

Referring to the drawings, a conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not limited thereto. For example, a layer performing a specific function is formed between the insulating layer 160 and the conductive adhesive layer 130, or a structure in which the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160 It is also possible. In a structure in which the conductive adhesive layer 130 is disposed on the substrate 110, the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity, and for this purpose, a material having conductivity and a material having adhesiveness may be mixed in the conductive adhesive layer 130. In addition, the conductive adhesive layer 130 has ductility, thereby enabling a flexible function in the display device.

As such an example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 allows electrical interconnection in the Z direction passing through the thickness, but may be configured as a layer having electrical insulation in the horizontal X-Y direction. Therefore, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (however, hereinafter referred to as a'conductive adhesive layer').

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member, and when heat and pressure are applied, only a specific portion becomes conductive by the anisotropic conductive medium. Hereinafter, it will be described that heat and pressure are applied to the anisotropic conductive film, but other methods are also possible in order for the anisotropic conductive film to partially have conductivity. This method may be, for example, only one of the above heat and pressure is applied or UV curing or the like.

In addition, the anisotropic conductive medium may be, for example, conductive balls or conductive particles. As shown in the drawing, in this example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member, and when heat and pressure are applied, only a specific portion becomes conductive by the conductive balls. In the anisotropic conductive film, a core of a conductive material may contain a plurality of particles covered by an insulating film made of a polymer material, and in this case, a portion to which heat and pressure is applied is destroyed by the insulating film and becomes conductive by the core. . At this time, the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and an electrical connection in the Z-axis direction is partially formed due to a height difference of a counterpart adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may contain a plurality of particles coated with a conductive material in an insulating core. In this case, the part to which heat and pressure are applied is deformed (pressed together) to have conductivity in the thickness direction of the film. As another example, a form in which the conductive material penetrates the insulating base member in the Z-axis direction and has conductivity in the thickness direction of the film is also possible. In this case, the conductive material may have a pointed end.

As illustrated, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of an insulating base member. More specifically, the insulating base member is formed of an adhesive material, and the conductive ball is intensively disposed on the bottom of the insulating base member, and when heat and pressure are applied from the base member, it is deformed together with the conductive ball. Accordingly, it has conductivity in the vertical direction.

However, the present invention is not necessarily limited thereto, and the anisotropic conductive film has a form in which conductive balls are randomly mixed in an insulating base member, or consists of a plurality of layers, and a form in which conductive balls are disposed in one layer (double- ACF) etc. are all possible.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which conductive balls are mixed with an insulating and adhesive base material. In addition, the solution containing conductive particles may be a solution containing conductive particles or nano particles.

Referring back to the drawings, the second electrode 140 is positioned on the insulating layer 160 to be spaced apart from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are located.

After forming the conductive adhesive layer 130 with the auxiliary electrode 170 and the second electrode 140 positioned on the insulating layer 160, the semiconductor light emitting device 150 is connected in a flip chip form by applying heat and pressure. Then, the semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.

Referring to FIG. 4, the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type electrode 156, a p-type semiconductor layer 155 on which the p-type electrode 156 is formed, an active layer 154 formed on the p-type semiconductor layer 155, and an active layer ( And an n-type semiconductor layer 153 formed on 154) and an n-type electrode 152 disposed horizontally apart from the p-type electrode 156 on the n-type semiconductor layer 153. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 and the conductive adhesive layer 130, and the n-type electrode 152 may be electrically connected to the second electrode 140.

Referring back to FIGS. 2, 3A, and 3B, the auxiliary electrode 170 is formed to be elongated in one direction, so that one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150. For example, p-type electrodes of the left and right semiconductor light emitting devices with the auxiliary electrode at the center may be electrically connected to one auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is pressed into the conductive adhesive layer 130 by heat and pressure, and through this, between the p-type electrode 156 and the auxiliary electrode 170 of the semiconductor light emitting device 150 Only a portion and a portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 have conductivity, and the remaining portion does not have conductivity because there is no press-fitting of the semiconductor light emitting device. In this way, the conductive adhesive layer 130 not only mutually couples the semiconductor light emitting device 150 and the auxiliary electrode 170 and between the semiconductor light emitting device 150 and the second electrode 140, but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitute a light emitting device array, and a phosphor layer 180 is formed in the light emitting device array.

The light emitting device array may include a plurality of semiconductor light emitting devices having different self-luminance values. Each of the semiconductor light emitting devices 150 is combined (or grouped) to form a unit pixel, and is electrically connected to the first electrode 120. For example, the first electrode 120 may be plural, the semiconductor light emitting elements are arranged in rows, for example, and the semiconductor light emitting elements of each row may be electrically connected to any one of the plurality of first electrodes.

In addition, since the semiconductor light emitting devices are connected in a flip chip form, semiconductor light emitting devices grown on a transparent dielectric substrate can be used. Further, the semiconductor light emitting devices may be, for example, nitride semiconductor light emitting devices. Since the semiconductor light emitting device 150 has excellent luminance, individual unit pixels can be configured with a small size.

As illustrated, a partition wall 190 may be formed between the semiconductor light emitting devices 150. In this case, the partition wall 190 may serve to separate the semiconductor light emitting devices from each other, and may be integrally formed with the conductive adhesive layer 130. For example, when the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, the base member of the anisotropic conductive film may form the partition wall.

In addition, when the base member of the anisotropic conductive film is black, the partition wall 190 may have reflective properties and increase contrast even without a separate black insulator.

As another example, a reflective partition wall may be separately provided as the partition wall 190. In this case, the partition wall 190 may include a black or white insulator depending on the purpose of the display device. When a partition wall of a white insulator is used, it is possible to increase reflectivity, and when a partition wall of a black insulator is used, it is possible to increase the contrast while having reflective characteristics.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device emitting blue (B) light, and the phosphor layer 180 performs a function of converting the blue (B) light into a color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting individual pixels.

That is, at a position forming a red unit pixel, a red phosphor 181 capable of converting blue light into red (R) light may be stacked on the blue semiconductor light emitting device 151, and a position forming the green unit pixel In, a green phosphor 182 capable of converting blue light into green (G) light may be stacked on the blue semiconductor light emitting device 151. Also, only the blue semiconductor light emitting device 151 may be used alone in a portion constituting the blue unit pixel. In this case, unit pixels of red (R), green (G), and blue (B) may form one pixel. More specifically, a phosphor of one color may be stacked along each line of the first electrode 120. Accordingly, one line of the first electrode 120 may be an electrode that controls one color. That is, along the second electrode 140, red (R), green (G), and blue (B) may be sequentially disposed, and a unit pixel may be implemented through this.

However, the present invention is not necessarily limited thereto, and a unit pixel that emits red (R), green (G) and blue (B) by combining the semiconductor light emitting device 150 and the quantum dot (QD) instead of the phosphor Can be implemented.

In addition, a black matrix 191 may be disposed between each of the phosphor layers in order to improve contrast. That is, the black matrix 191 may improve contrast of the contrast.

However, the present invention is not necessarily limited thereto, and other structures for implementing blue, red, and green colors may be applied.

Referring to FIG. 5A, each semiconductor light emitting device 150 mainly uses gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together to emit a variety of light including blue. It can be implemented as a device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a sub-pixel, respectively. For example, red, green, and blue semiconductor light emitting devices (R, G, B) are alternately arranged, and unit pixels of red, green, and blue by red, green, and blue semiconductor light emitting devices They form one pixel, through which a full color display can be implemented.

Referring to FIG. 5B, the semiconductor light emitting device may include a white light emitting device W in which a yellow phosphor layer is provided for each individual device. In this case, to form a unit pixel, a red phosphor layer 181, a green phosphor layer 183, and a blue phosphor layer 183 may be provided on the white light emitting device W. In addition, a unit pixel may be formed by using a color filter in which red, green, and blue are repeated on the white light emitting device W.

Referring to FIG. 5C, a structure in which a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 are provided on the ultraviolet light emitting device UV is also possible. In this way, the semiconductor light emitting device can be used not only for visible light but also for ultraviolet (UV) light, and the ultraviolet (UV) can be extended in the form of a semiconductor light emitting device that can be used as an excitation source of the upper phosphor. .

Looking again at this example, the semiconductor light emitting device 150 is positioned on the conductive adhesive layer 130 to constitute a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent luminance, individual unit pixels can be configured with a small size. The individual semiconductor light emitting device 150 may have a side length of 80 μm or less, and may be a rectangular or square device. In the case of a rectangle, the size may be 20X80㎛ or less.

In addition, even when the square semiconductor light emitting device 150 having a side length of 10 μm is used as a unit pixel, sufficient brightness to form a display device is exhibited. Accordingly, for example, when the size of the unit pixel is a rectangular pixel having one side of 600 µm and the other side of 300 µm, the distance between the semiconductor light emitting elements is relatively large enough. Therefore, in this case, it is possible to implement a flexible display device having HD image quality.

The display device using the semiconductor light emitting device described above can be manufactured by a new type of manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG. 6.

6 is a cross-sectional view showing a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

Referring to this drawing, first, a conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are positioned. An insulating layer 160 is stacked on the first substrate 110 to form one substrate (or wiring board), and the first electrode 120, the auxiliary electrode 170, and the second electrode 140 are formed on the wiring board. Is placed. In this case, the first electrode 120 and the second electrode 140 may be disposed in a mutually orthogonal direction. In addition, in order to implement a flexible display device, the first substrate 110 and the insulating layer 160 may each include glass or polyimide (PI).

The conductive adhesive layer 130 may be implemented by, for example, an anisotropic conductive film, and for this purpose, an anisotropic conductive film may be applied to a substrate on which the insulating layer 160 is positioned.

Next, the second substrate 112 corresponding to the positions of the auxiliary electrodes 170 and the second electrodes 140 and on which the plurality of semiconductor light emitting elements 150 constituting individual pixels are positioned is formed. ) Is disposed to face the auxiliary electrode 170 and the second electrode 140.

In this case, the second substrate 112 is a growth substrate on which the semiconductor light emitting device 150 is grown, and may be a spire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in units of a wafer, it can be effectively used in a display device by having a gap and a size capable of forming a display device.

Then, the wiring board and the second board 112 are thermally compressed. For example, the wiring board and the second board 112 may be thermocompressed by applying an ACF press head. The wiring board and the second board 112 are bonded by the thermal compression bonding. Due to the property of the anisotropic conductive film having conductivity by thermocompression bonding, only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity, through which electrodes and semiconductor light emission The device 150 may be electrically connected. In this case, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and a partition wall may be formed between the semiconductor light emitting devices 150 through this.

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO).

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating silicon oxide (SiOx) or the like on the wiring board to which the semiconductor light emitting device 150 is bonded.

In addition, a step of forming a phosphor layer on one surface of the semiconductor light emitting device 150 may be further included. For example, the semiconductor light-emitting device 150 is a blue semiconductor light-emitting device that emits blue (B) light, and a red or green phosphor for converting the blue (B) light into the color of a unit pixel is used to emit the blue semiconductor light. A layer can be formed on one side of the device.

The manufacturing method or structure of a display device using the semiconductor light emitting device described above may be modified in various forms. As an example, a vertical semiconductor light emitting device may also be applied to the display device described above. Hereinafter, a vertical structure will be described with reference to FIGS. 5 and 6.

In addition, in the modified examples or embodiments described below, the same or similar reference numerals are assigned to the same or similar configurations as the previous example, and the description is replaced with the first description.

7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, FIG. 8 is a cross-sectional view taken along the line CC of FIG. 7, and FIG. 9 is a conceptual diagram showing the vertical semiconductor light emitting device of FIG. to be.

Referring to the drawings, the display device may be a display device using a passive matrix (PM) type vertical semiconductor light emitting device.

The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and a plurality of semiconductor light emitting devices 250.

The substrate 210 is a wiring board on which the first electrode 220 is disposed, and may include polyimide (PI) to implement a flexible display device. In addition, any material that has insulation and is flexible may be used.

The first electrode 220 is positioned on the substrate 210 and may be formed as an electrode having a long bar shape in one direction. The first electrode 220 may be formed to serve as a data electrode.

The conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is located. Like a display device to which a flip chip type light emitting element is applied, the conductive adhesive layer 230 is a solution containing an anisotropic conductive film (ACF), an anisotropic conductive paste, and conductive particles. ), etc. However, also in this embodiment, the case in which the conductive adhesive layer 230 is implemented by the anisotropic conductive film is illustrated.

After the anisotropic conductive film is positioned on the substrate 210 with the first electrode 220 positioned, the semiconductor light emitting element 250 is connected by applying heat and pressure to the semiconductor light emitting element 250. It is electrically connected to the electrode 220. In this case, the semiconductor light emitting device 250 is preferably disposed to be positioned on the first electrode 220.

As described above, the electrical connection is created because the anisotropic conductive film partially has conductivity in the thickness direction when heat and pressure are applied. Accordingly, the anisotropic conductive film is divided into a portion 231 having conductivity and a portion 232 having no conductivity in the thickness direction.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 implements electrical connection as well as mechanical coupling between the semiconductor light emitting device 250 and the first electrode 220.

In this way, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230, thereby configuring individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent luminance, individual unit pixels can be configured with a small size. The individual semiconductor light emitting device 250 may have a side length of 80 μm or less, and may be a rectangular or square device. In the case of a rectangle, the size may be 20X80㎛ or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 are disposed between the vertical semiconductor light emitting devices in a direction crossing the length direction of the first electrode 220 and electrically connected to the vertical semiconductor light emitting device 250.

Referring to FIG. 9, such a vertical semiconductor light emitting device includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, and an active layer 254 formed on the p-type semiconductor layer 255. ), an n-type semiconductor layer 253 formed on the active layer 254 and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom may be electrically connected by the first electrode 220 and the conductive adhesive layer 230, and the n-type electrode 252 located at the top is a second electrode 240 to be described later. ) And can be electrically connected. The vertical semiconductor light emitting device 250 has a great advantage of reducing a chip size since electrodes can be arranged up and down.

Referring back to FIG. 8, a phosphor layer 280 may be formed on one surface of the semiconductor light emitting device 250. For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and a phosphor layer 280 for converting the blue (B) light into a color of a unit pixel is provided. Can be. In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, at a position forming a red unit pixel, a red phosphor 281 capable of converting blue light into red (R) light may be stacked on the blue semiconductor light emitting device 251, and a position forming the green unit pixel In, a green phosphor 282 capable of converting blue light into green (G) light may be stacked on the blue semiconductor light emitting device 251. In addition, only the blue semiconductor light emitting device 251 may be used alone in a portion constituting the blue unit pixel. In this case, unit pixels of red (R), green (G), and blue (B) may form one pixel.

However, the present invention is not necessarily limited thereto, and other structures for implementing blue, red, and green colors may be applied as described above in a display device to which a flip chip type light emitting device is applied.

Referring back to this embodiment, the second electrode 240 is positioned between the semiconductor light emitting devices 250 and is electrically connected to the semiconductor light emitting devices 250. For example, the semiconductor light emitting devices 250 may be arranged in a plurality of rows, and the second electrode 240 may be located between the rows of the semiconductor light emitting devices 250.

Since the distance between the semiconductor light emitting devices 250 constituting individual pixels is sufficiently large, the second electrode 240 may be positioned between the semiconductor light emitting devices 250.

The second electrode 240 may be formed as a long bar-shaped electrode in one direction, and may be disposed in a direction perpendicular to the first electrode.

In addition, the second electrode 240 and the semiconductor light emitting device 250 may be electrically connected by a connection electrode protruding from the second electrode 240. More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a portion of the ohmic electrode by printing or vapor deposition. Through this, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 may be electrically connected.

As illustrated, the second electrode 240 may be positioned on the conductive adhesive layer 230. In some cases, a transparent insulating layer (not shown) including silicon oxide (SiOx) or the like may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. In addition, the second electrode 240 may be formed to be spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as ITO (Indium Tin Oxide) is used to place the second electrode 240 on the semiconductor light emitting device 250, the ITO material has poor adhesion to the n-type semiconductor layer. have. Accordingly, according to the present invention, by placing the second electrode 240 between the semiconductor light emitting devices 250, there is an advantage in that a transparent electrode such as ITO is not required. Accordingly, the light extraction efficiency can be improved by using the n-type semiconductor layer and a conductive material having good adhesion as a horizontal electrode without being restricted by the selection of a transparent material.

As illustrated, a partition wall 290 may be positioned between the semiconductor light emitting devices 250. That is, a partition wall 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 constituting individual pixels. In this case, the partition wall 290 may serve to separate individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 230. For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film may form the partition wall.

In addition, if the base member of the anisotropic conductive film is black, the partition wall 290 may have reflective properties and a contrast ratio may be increased even without a separate black insulator.

As another example, as the partition wall 190, a reflective partition wall may be separately provided. The partition wall 290 may include a black or white insulator depending on the purpose of the display device.

If the second electrode 240 is directly positioned on the conductive adhesive layer 230 between the semiconductor light emitting elements 250, the partition wall 290 is between the vertical semiconductor light emitting element 250 and the second electrode 240. It can be located between. Accordingly, individual unit pixels can be configured with a small size using the semiconductor light emitting device 250, and the distance between the semiconductor light emitting device 250 is relatively large enough, so that the second electrode 240 is connected to the semiconductor light emitting device 250. ), there is an effect of implementing a flexible display device having HD image quality.

Further, according to the illustration, a black matrix 291 may be disposed between each phosphor to improve contrast. That is, the black matrix 291 can improve contrast of light and dark.

As described above, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230, thereby configuring individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent luminance, individual unit pixels can be configured with a small size. Accordingly, a full color display in which red (R), green (G), and blue (B) semiconductor light emitting devices form a unit pixel (or pixel) may be implemented by the semiconductor light emitting device.

In the display device using the semiconductor light emitting device of the present invention described above, the structure and manufacturing method of the display device for improving the yield (yield rate, 收率) in manufacturing the display panel can be considered. .

Here, the yield refers to the ratio of the finished product to the input amount, and may generally be determined based on the number of good products (good products) produced per wafer sheet. In addition, a display device classified as a defective product may be a display device in which the number of defective semiconductor light emitting devices among a plurality of semiconductor light emitting devices constituting the display device is greater than or equal to a predetermined ratio. Accordingly, the present invention proposes a new structure of a display device capable of improving the yield of the display device despite a simple manufacturing process.

Hereinafter, the structure of the new display device will be described in more detail with reference to the accompanying drawings. FIG. 10 is an enlarged view of part A of FIG. 1 for explaining another embodiment of the present invention, FIG. 11A is a cross-sectional view taken along BB of FIG. 10, and FIGS. 11B, 11C, and 11D are These are cross-sectional views for explaining modified examples of the display device.

Referring to FIGS. 10 and 11A, a display device 1000 using a passive matrix (PM) type semiconductor light emitting device is illustrated as a display device 1000 using a semiconductor light emitting device. However, the example described below is applicable to an active matrix (AM) type semiconductor light emitting device.

As previously described in FIG. 2, the display device 1000 includes a substrate 1010, a first electrode 1020, a conductive adhesive layer 1030, a second electrode 1040, and a plurality of semiconductor light emitting devices 1050. Include. Here, the first electrode 1020 may include a plurality of electrode lines 1021.

In the embodiment or modification of each configuration described below, the same or similar reference numerals are assigned to the same or similar configurations above, and the description is replaced with the first description.

The substrate 1010 may be a wiring board on which a plurality of electrode lines 1021 included in the first electrode 1020 are disposed, and thus the first electrode 1020 may be positioned on the substrate 1010. I can. In addition, a second electrode 1040 is disposed on the substrate 1010. For example, the substrate 1010 becomes a wiring board including a plurality of layers, and the first electrode 1020 and the second electrode 1040 may be formed on a plurality of layers, respectively. In this case, in the display device described with reference to FIGS. 3A and 3B, the wiring board has an insulating property such as polyimide (PI), PET, and PEN, and a flexible material. It can be a substrate integrally composed of.

As illustrated, the first electrode 1020 and the second electrode 1030 are electrically connected to the plurality of semiconductor light emitting devices 1050. In this case, the first electrode 1020 may be connected to the plurality of semiconductor light emitting devices 1050 via an auxiliary electrode 170 disposed on the same plane as the second electrode. Electrical connection between the first electrode 1020 and the second electrode 1030 and the plurality of semiconductor light emitting devices 1050 is made by a conductive adhesive layer 1030 disposed on one surface of the substrate 1010.

The conductive adhesive layer 1030 may be a layer having adhesiveness and conductivity, and for this purpose, a conductive material and a material having adhesiveness may be mixed in the conductive adhesive layer 1030. In addition, the conductive adhesive layer 1030 has ductility, thereby enabling a flexible function in the display device.

As such an example, the conductive adhesive layer 1030 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. After forming the conductive adhesive layer 1030 with the auxiliary electrode 1070 and the second electrode 1040 positioned on the substrate 1010, the semiconductor light emitting device 1050 is connected in a flip chip form by applying heat and pressure. , The semiconductor light emitting device 1050 is electrically connected to the first electrode 1020 and the second electrode 1040.

As shown, the plurality of semiconductor light emitting devices 1050 constitute an array of semiconductor light emitting devices along the plurality of electrode lines 1021.

The light emitting device array may include a plurality of semiconductor light emitting devices. More specifically, a combination of a plurality of semiconductor light emitting devices arranged in a line may be defined as one light emitting device array. In this embodiment, the row is illustrated as a row formed along the first electrode 1020, and thus each light emitting element array is formed by each of a group of semiconductor light emitting elements parallel to the extending direction of the first electrode 1020. . However, the present invention is not necessarily limited thereto. For example, a plurality of semiconductor light emitting devices arranged along the second electrode 1040 may be configured as one light emitting device array.

In addition, the light emitting element array is electrically connected to adjacent electrode lines arranged in parallel.

For example, the first semiconductor light emitting device array 1050a is electrically connected to the adjacent first electrode line 1021. As described above, the first electrode 1020 may include a plurality of electrode lines, and the semiconductor light emitting devices are arranged in, for example, several rows along a plurality of electrode lines, and the semiconductor light emitting devices in each row may include any one of the plurality of electrode lines. Can be electrically connected to

Furthermore, a phosphor of one color may be stacked along each of the plurality of electrode lines. Accordingly, one electrode line in the first electrode 1020 may be an electrode that controls one color. That is, along the second electrode 1040, red (R), green (G), and blue (B) may be sequentially disposed, and a unit pixel (or unit pixel) may be implemented through this. More specifically, each of the semiconductor light emitting devices 1050 is combined (or grouped) to form a unit pixel, and the unit pixel may include a plurality of semiconductor light emitting devices respectively disposed in a plurality of light emitting device arrays.

For example, the plurality of semiconductor light emitting devices may be arranged in a matrix structure forming a matrix in the arrangement direction of the first electrode 1020 and the second electrode 1040. Hereinafter, a direction parallel to the plurality of electrode lines of the first electrode 1020 may be defined as a column of the matrix structure, and a direction parallel to the second electrode 1040 may be defined as a row. According to the illustration, among semiconductor light emitting devices sharing one row, semiconductor light emitting devices corresponding to R, G, and B may be grouped to form each unit pixel.

Meanwhile, in the present invention, other semiconductor light emitting devices may be further included in addition to the semiconductor light emitting devices corresponding to R, G, and B, and this may be referred to as an extended unit pixel.

That is, the expansion unit pixel may include N+1 semiconductor light emitting devices, which is one more than the minimum number of semiconductor light emitting devices N for forming a unit pixel. In this case, light emission of R, G, and B may be implemented excluding at least one of the plurality of semiconductor light emitting devices included in each expansion unit pixel. For example, the expansion unit pixel forms one unit pixel through at least four semiconductor light emitting devices, and is configured to emit light in three colors of R, G, and B. For example, assuming that a first column shown in FIG. 10 is an expansion unit pixel 1050b, the expansion unit pixels include semiconductor light emitting devices 1051, 1052, and 1053 corresponding to R, G, and B. In addition to ), at least one semiconductor light emitting device 1054 may be further included. As another example, the display device of the present invention includes N+M or more semiconductor light emitting devices, which are M more than the number N of semiconductor light emitting devices for forming unit pixels in the expansion unit pixel, and N+M semiconductor light emitting devices are included in the wiring board. More than one electrode line may be provided.

Meanwhile, in the present invention, even if the at least one semiconductor light emitting device 1054 is further included in each expansion unit pixel, transmission of the driving signal of the driving unit to the at least one semiconductor light emitting device 1054 is blocked. The driving unit (not shown) may be a driving semiconductor chip, has a chip-on-film (COF) form, and is electrically connected to the connection wiring of the display device.

As a result, each expansion unit pixel may be implemented as one unit pixel through light emission of N semiconductor light emitting devices corresponding to each of the N colors forming the unit pixel.

That is, at least one of the plurality of light-emitting elements included in each expansion unit pixel may be blocked from a driving signal transmission path to the driving unit by disconnection of electrical connection with the driving unit. In this case, the disconnection of the electrical connection may be implemented according to a mechanism in which a part of the electrical path on the connection wiring is disconnected (the mechanism will be described later). Through this, lighting of the at least one light emitting device 1054 may be restricted. As described above, each expansion unit pixel further includes a semiconductor light emitting device with limited light emission in addition to the semiconductor light emitting devices corresponding to R, G, and B.

Here, the semiconductor light emitting device whose electrical connection is disconnected may be a defective (or broken) semiconductor light emitting device. That is, in the present invention, by providing an extra semiconductor light-emitting device for each expansion unit pixel, even if a defective semiconductor light-emitting device is identified, it is possible to implement a unit pixel that implements R, G, and B by limiting lighting thereof.

Meanwhile, as described above, a phosphor of one color may be stacked along each of the plurality of electrode lines 1021 of the first electrode 1020. For example, when the semiconductor light emitting devices provided in the display device 1000 are blue semiconductor light emitting devices, in order to emit red, the adjacent electrode line of the first electrode 1020 to which a driving signal for emitting red is transmitted. A red phosphor may be stacked on the outer surfaces of the semiconductor light emitting devices of the light emitting device array.

That is, in order to emit red light, a red phosphor 1081 capable of converting blue light into red (R) light may be stacked on the blue semiconductor light emitting device.

In addition, in the display apparatus 1000 as described above, in order to emit green, on the outer surfaces of the semiconductor light emitting elements of the light emitting element array adjacent to the electrode line of the first electrode 1020 through which a driving signal for emitting green is transmitted, Green phosphors can be stacked.

That is, in order to emit green color, a green phosphor 1082 capable of converting blue light into green (G) light may be stacked on the blue semiconductor light emitting device. In addition, in order to emit blue light, only a blue semiconductor light emitting device may be used alone.

As illustrated, in each expansion unit pixel, a plurality of semiconductor light emitting devices may be disposed without stacking of phosphors. For example, in each expansion unit pixel, a plurality of blue semiconductor light emitting devices in which phosphors are not stacked may be provided in order to emit blue light, and one of them may be a semiconductor light emitting device excluded from forming the unit pixel. In this case, before the phosphor is stacked on the semiconductor light emitting device, among the semiconductor light emitting devices included in each expansion unit pixel, a semiconductor light emitting device to block electrical connection to the driving unit may be determined.

For example, the fourth semiconductor light emitting device 1054 of the first, second, third, and fourth semiconductor light emitting devices 1051, 1052, 1053, and 1054 included in the expansion unit pixel 1050b as viewed in FIG. 10 ) Is excluded from the semiconductor light emitting device for forming the unit pixel, in the display device 1000 according to the present invention, as shown in FIG. 11A, the first, second, and third semiconductor light emitting devices 1051, 1052, 1053 ), R, G, and B may be emitted. Here, a red (R) phosphor is stacked on the first semiconductor light emitting device 1051, a green (G) phosphor is stacked on the second semiconductor light emitting device 1052, and a third semiconductor light emitting device emits blue light. In the fourth semiconductor light-emitting element 1053 and the lighting-restricted fourth semiconductor light-emitting element 1054, no phosphor is stacked. In this case, the arrangement order of the phosphors may be changed according to the determination of the semiconductor light emitting device on which the phosphors are not stacked. Hereinafter, modified examples of the display device in which the arrangement order of the phosphors is different will be described.

11B, 11C, and 11D are cross-sectional views for explaining modified examples of the display device of FIG. 10, and these drawings show different phosphors based on the positions of semiconductor light emitting devices that are electrically disconnected from each expansion unit pixel. Embodiments stacked in position will be described. Hereinafter, as described in FIG. 11A, a case in which four semiconductor light emitting devices are included in each expansion unit pixel will be described as an example.

First, as shown in FIG. 11B, a second semiconductor light emitting device among the first, second, third, and fourth semiconductor light emitting devices 1051, 1052, 1053, and 1054 included in the expansion unit pixel 1050b is , When the electrical connection with the driver is cut off, in the display device 1000 according to the present invention, through the first, third and fourth semiconductor light emitting elements 1051, 1053, and 1054, R, G, and B emit light. Can be. Here, a red (R) phosphor is stacked on the first semiconductor light emitting device 1051, a green (G) phosphor is stacked on the third semiconductor light emitting device 1053, and a fourth semiconductor light emitting device emits blue light. In the second semiconductor light emitting device 1052 where lighting is restricted (1054) and the lighting is restricted, no phosphor is stacked.

As another example, as shown in FIG. 11C, a first semiconductor among the first, second, third, and fourth semiconductor light emitting devices 1051, 1052, 1053, and 1054 included in the expansion unit pixel 1050b When light emission of the light emitting device is limited, in the display device 1000 according to the present invention, R, G, and B may be emitted through the second, third, and fourth semiconductor light emitting devices 1052, 1053, and 1054. . Here, a red (R) phosphor is stacked on the second semiconductor light emitting device 1052, a green (G) phosphor is stacked on the third semiconductor light emitting device 1053, and a fourth semiconductor light emitting device emits blue light. In 1054 and the first semiconductor light emitting element 1051 where lighting is restricted, no phosphor is stacked.

As another example, as shown in FIG. 11D, a third semiconductor among the first, second, third, and fourth semiconductor light emitting devices 1051, 1052, 1053, and 1054 included in the expansion unit pixel 1050b When the light emitting device is electrically connected to the driver is blocked, in the display device 1000 according to the present invention, R, G, B through the first, second, and fourth semiconductor light emitting devices 1051, 1052, and 1054 Can emit light. Here, a red (R) phosphor is stacked on the first semiconductor light emitting device 1051, a green (G) phosphor is stacked on the second semiconductor light emitting device 1052, and the fourth semiconductor light emitting device emits blue light. In the third semiconductor light emitting device 1053 in which lighting is restricted (1054) and the lighting is restricted, no phosphor is laminated.

The display device of the present invention may be formed in a structure in which various embodiments shown in FIGS. 11A to 11 are mixed. For example, the first expansion unit pixel may be arranged as shown in FIG. 11A, and the second expansion unit pixel may be formed as shown in FIG. 11B. As described above, in the present invention, the arrangement of phosphors may be irregularly formed over the entire display device.

On the other hand, in FIGS. 11A, 11B, 11C, and 11D, a case where four semiconductor light emitting devices are included in the expansion unit pixel has been described as an example, but each expansion unit pixel includes four or more semiconductor light emitting devices. It is possible. In this case, if the semiconductor light emitting device included in each expansion unit pixel is a blue semiconductor light emitting device, the number of semiconductor light emitting devices in which the phosphor is not stacked may be two or more.

Meanwhile, in FIGS. 11A, 11B, 11C, and 11D, a display device including a blue semiconductor light emitting device has been described as an example, but other embodiments are possible. 12A, 12B, and 12C are conceptual diagrams showing various forms of implementing colors in relation to a flip chip type semiconductor light emitting device to which the present invention is applied.

As an example, referring to FIG. 12A, each of the expansion unit pixels may include red, green, and blue semiconductor light emitting devices 1211, 1212, 1213, and 1214. For example, the red, green, and blue semiconductor light emitting devices R, G, and B may be arranged in a line, as shown. These red, green, and blue semiconductor light emitting devices constitute one pixel, and a full color display may be implemented through them. Meanwhile, as described above, since the present invention includes N+1 more semiconductor light emitting devices than the number N of light emitting devices for implementing R, G, and B, even in the case of FIG. 12A, any one semiconductor light emitting device The electrical connection to is cut off. As another example, the display device of the present invention includes N+M or more semiconductor light emitting devices, which are M more than the number of semiconductor light emitting devices for forming unit pixels in the expansion unit pixel, and in this case, the wiring board N+M or more electrode lines may be provided.

In this example, each expansion unit pixel may include a plurality of blue semiconductor light emitting devices 1213 and 1214. In addition, any one of the blue semiconductor light emitting devices 1213 and 1214 is disconnected from the electric connection with the driver. Through this, even if a defect occurs in one semiconductor light emitting device, it is possible to emit light of R, G, and B in the expansion unit pixel. For example, one of the blue semiconductor light emitting devices 1213 and 1214 is for emitting blue without a phosphor, and the other is stacked with a phosphor of a corresponding color in order to implement the color of the defective semiconductor device. I can.

As a more specific example, in FIG. 12A, when the electrical connection between the red semiconductor light emitting device and the driver is blocked, a red phosphor layer is stacked on any one of the blue semiconductor light emitting devices 1213 and 1214, The stacked blue semiconductor light emitting device may serve as a red semiconductor light emitting device whose electrical connection is blocked. Also, even when the green semiconductor light emitting device is disconnected from the electric connection to the driver, the same example as when the red semiconductor light emitting device is disconnected from the driver may be applied. As another example, referring to FIG. 12B, the semiconductor The light-emitting device may include a white light-emitting device W in which a yellow phosphor layer is provided for each individual device. In this case, to form a unit pixel, a red phosphor layer 1281, a green phosphor layer 1282, and a blue phosphor layer 1283 may be provided on the white light emitting device W. In addition, a unit pixel may be formed by using a color filter in which red, green, and blue are repeated on the white light emitting device W. In addition, even when the white light-emitting element W is provided, the expansion unit pixel 1210 includes a larger number of white light-emitting elements W than the number of white light-emitting elements W for emitting N colors. I can. Among the semiconductor light emitting devices included in the expansion unit pixel 1210, a phosphor layer may not be stacked on the semiconductor light emitting device 1214 whose electrical connection to the driver is blocked.

Referring to FIG. 12C, a structure in which a red phosphor layer 1281, a green phosphor layer 1282, and a blue phosphor layer 1283 are provided on the ultraviolet light emitting device UV is also possible. In this way, the semiconductor light emitting device can be used not only for visible light but also for ultraviolet (UV) light, and the ultraviolet (UV) can be extended in the form of a semiconductor light emitting device that can be used as an excitation source of the upper phosphor. . In addition, even when the ultraviolet light emitting device (UV) is provided, the expansion unit pixel 1210 may include a greater number of ultraviolet light emitting devices (UV) than the number of ultraviolet light emitting devices (UV) for emitting N colors. . Among the semiconductor light emitting devices included in the expansion unit pixel 1210, a phosphor layer may not be stacked on the semiconductor light emitting device 1214 whose electrical connection to the driver is blocked.

In the above, a structure and method for forming a unit pixel has been described, excluding semiconductor light emitting devices in which electrical connection is blocked among semiconductor light emitting devices included in the expansion unit pixel. Hereinafter, a method for determining a semiconductor light-emitting device from among semiconductor light-emitting devices included in a unit pixel to be blocked from electrical connection and a structure for blocking electrical connection to the semiconductor light-emitting device will be described in more detail.

13 is a flowchart illustrating a method of manufacturing a display device according to the present invention, FIG. 14 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention, and FIGS. 15A, 15B and 15C are Conceptual diagrams for explaining FIG. 13.

First, according to the illustrations of FIGS. 10 and 11A described above, N+1 electrode lines 1021 are provided in the expansion unit pixel 1510b emitting N colors. As illustrated, light emitting device arrays are disposed adjacent to each of the N+1 electrode lines.

For example, the expansion unit pixel 1510b includes N+1 semiconductor light emitting devices each connected to N+1 electrode lines. As described above, in the extended unit pixel composed of N+1 semiconductor light emitting devices, only some of the included semiconductor light emitting devices are electrically connected to the driver to emit N colors, thereby implementing one unit pixel. In implementing the unit pixel, the excluded semiconductor light emitting devices are electrically connected to the driving unit.

As another example, the display device of the present invention includes N+M or more semiconductor light emitting devices, which are M more than the number N of semiconductor light emitting devices for forming unit pixels in the expansion unit pixel, and N+M semiconductor light emitting devices are included in the wiring board. More than one electrode line may be provided.

Which of the plurality of semiconductor light-emitting devices included in the expansion unit pixel is excluded and the unit pixel is implemented may not be individually determined for each expansion unit pixel. For example, when an electrode line to be excluded is determined according to a preset criterion, semiconductor light emitting devices connected thereto may be excluded from the functional implementation of the unit pixel in each extended unit pixel as a whole. In this case, the predetermined criterion may be determined according to a degree of defect of each light emitting device array corresponding to the electrode lines.

More specifically, in the present invention, the light emitting device array including the most defective semiconductor light emitting devices among the light emitting device arrays arranged along the electrode lines included in each expansion unit pixel (hereinafter referred to as'defective light emitting device array') Wow, the drive is blocked from being connected. Through this, the yield of the display device can be increased.

Meanwhile, the light emitting device arrays are electrically connected to the driving unit through electrode lines adjacent to the respective light emitting device arrays. That is, the driving signal generated from the driving unit may be transmitted to the light emitting device array through the electrode line.

Accordingly, the blocking of the electrical connection between the defective light emitting device array and the driver may be implemented by disconnecting the electrical connection path of the corresponding electrode line.

The expansion unit pixel includes a semiconductor light emitting device connected to an electrode line in which a driving signal transmission path of a driver is disconnected among electrode lines provided in each expansion unit pixel, but in a unit pixel implemented by the expansion unit pixel, the semiconductor light emitting device Is excluded.

As described above, in this example, in order to implement the unit pixel, which of the semiconductor light emitting devices included in each expansion unit pixel is excluded, depending on the degree of defect of the light emitting device arrays of the semiconductor light emitting devices included in the expansion unit pixel. Is determined. Accordingly, the expansion unit pixel may include a semiconductor light emitting device connected to an electrode line having no defect but having a disconnected driving signal transmission path. That is, in the extended unit pixel, even a semiconductor light emitting device that does not implement a unit pixel may be a semiconductor light emitting device without defects.

Hereinafter, a method of cutting a driving signal transmission path by inspecting a defective semiconductor light emitting device and a structure implemented through the method will be described in more detail.

Referring to FIG. 13, in a method of manufacturing a display device, first, a step of preparing a display panel is performed (S1310).

In the step of preparing the display panel (S1310), a manufacturing process is performed until a state in which the semiconductor light emitting device can be inspected. 14A and 14B, a conductive adhesive layer 1430 is formed on the insulating layer 1460 on which the auxiliary electrode (not shown) and the second electrode 1440 are positioned. An insulating layer 1460 is stacked on the first substrate 1410 to form one substrate (or wiring board), and the first electrode 1420, an auxiliary electrode (not shown), and a second electrode ( 1440) is placed. In this case, the first electrode 1420 and the second electrode 1440 may be disposed in a mutually orthogonal direction. In addition, in order to implement a flexible display device, the first substrate 1410 and the insulating layer 1460 may each include glass or polyimide (PI).

In a manufacturing process of preparing a display panel, semiconductor light emitting devices may form a light emitting device array along a plurality of electrode lines 1521 (see FIG. 15A). The semiconductor light emitting device arrays may be arranged in a matrix structure forming a matrix in an arrangement direction of the first electrode 1520 and the second electrode (not shown). As described above, a direction parallel to the plurality of electrode lines of the first electrode 1520 may be defined as a column of the matrix structure, and a direction parallel to the second electrode (not shown) may be defined as a row.

The conductive adhesive layer 1430 may be implemented by, for example, an anisotropic conductive film, and for this purpose, an anisotropic conductive film may be applied to a substrate on which the insulating layer 1460 is positioned.

Next, as shown in (c) of FIG. 14, a plurality of semiconductor light emitting devices 1450 corresponding to the positions of the auxiliary electrodes (not shown) and the second electrodes 140 and constituting individual pixels are positioned. The formed second substrate 1412 is disposed so that the semiconductor light emitting device 1450 faces the auxiliary electrode (not shown) and the second electrode 1440.

In this case, the second substrate 1412 is a growth substrate on which the semiconductor light emitting device 1450 is grown, and may be a spire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in units of a wafer, it can be effectively used in a display device by having a gap and a size capable of forming a display device.

Then, the wiring board and the second board 1412 are thermally compressed. For example, the wiring board and the second board 1412 may be thermocompressed by applying an ACF press head. The wiring board and the second board 1412 are bonded by the thermal compression bonding. Due to the property of the anisotropic conductive film having conductivity by thermocompression bonding, only the portion between the semiconductor light emitting device 1450 and the auxiliary electrode (not shown) and the second electrode 1440 has conductivity, through which the electrodes The semiconductor light emitting device 1450 may be electrically connected. In this case, the semiconductor light emitting device 1450 is inserted into the anisotropic conductive film, and a partition wall may be formed between the semiconductor light emitting devices 1450 through this.

Then, as shown in Fig. 14D, the second substrate 1412 is removed. For example, the second substrate 1412 may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO). Next, as illustrated in (e) of FIG. 14, the second substrate 1412 is removed to expose the semiconductor light emitting devices 1450 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating silicon oxide (SiOx) or the like on the wiring board to which the semiconductor light emitting device 1450 is bonded.

Through the manufacturing process described above, the preparation of the display panel is completed. Preparation of the display panel means a state in which the manufacturing process of the display panel has progressed to a state in which a driving signal can be transmitted to the semiconductor light emitting device.

Referring to FIG. 15A, a state in which semiconductor light emitting devices are mounted on a wiring board while configuring a light emitting device array along a plurality of electrode lines 1521 may be a state in which a display panel is prepared. More specifically, FIG. 15A illustrates a semiconductor light emitting device 1550, a plurality of electrode lines 1521 connected to the semiconductor light emitting devices 1550, and a wiring board 1510 on which a plurality of electrode lines 1521 are disposed. Is a conceptual diagram, and the state of the display panel shown in FIG. 15A may be a state in which the manufacturing processes up to (a), (b), (c), (d) and (e) of FIG. 14 have been completed.

The plurality of electrode lines, as shown in FIG. 15B, are connected to a connection line to form an electrical connection path for transmitting a driving signal of a driver to the semiconductor light emitting device arrays. A connection wiring 1560 for connecting a plurality of electrode lines included in the first electrode 1520 to a driver (not shown) of a plurality of semiconductor light emitting devices on one surface 1510a on which a plurality of electrode lines are arranged on the wiring board 1510 ) Is formed. The driving unit may be a driving semiconductor chip, and is mounted on a connection member (not shown) in the form of a chip-on-film (COF), and the connection wiring 1560 is connected to a connection member (not shown). More specifically, the connection wiring 1560 is respectively connected to the first electrode and the second electrode, but in this embodiment, only the connection wiring connected to the first electrode will be described.

The connection wiring 1560 extends from the plurality of electrode lines 1521 along the column direction (or length direction) of the plurality of electrode lines. The connection wiring 1560 extends to a connection area (not shown) of the wiring board 1510 and is connected to the connection member (not shown) in the connection area (not shown). The connection area (not shown) may be formed at one end of the wiring board 1510.

In this embodiment, the connection wiring 1560 extends in one direction from the plurality of electrode lines included in the first electrode 1520, but the present invention is not limited thereto. For example, the connection wiring 1560 may be formed in both directions on the first electrode 1520. As this example, some of the connection wirings 1560 extend from the plurality of electrode lines of the first electrode 1520 to one end of the wiring board 1510, and other portions of the wiring board 1510 are in the opposite direction. It can be extended to the other end. Further, connection wirings extending in opposite directions may be sequentially arranged.

According to the structure described above, the driving unit drives the semiconductor light emitting device through the connection region (not shown), the connection wiring 1560 and the electrode lines 1521, and thus, red, green, and A flexible display in which blue light-emitting devices form one pixel may be implemented.

Since the display panel shown in FIG. 15A is before the phosphor layer is stacked on the semiconductor light emitting devices, when semiconductor light emitting devices emitting blue light are provided on the display panel, when lit, the display panel has the same color (for example, Blue light) may be emitted.

In the display device, the driver may generate a driving signal based on the electrode line. For example, the driving unit may generate different driving signals for each electrode line, but may generate driving signals corresponding to the same color to one electrode line. This may be implemented as a phosphor layer for emitting a specific color is stacked on a semiconductor array connected along the electrode line 1521. Accordingly, referring to FIG. 15A, driving signals corresponding to the same color may be transmitted to the semiconductor array connected to the same electrode line 1521.

In this way, since the driving signal corresponding to the same color is transmitted based on the electrode line, the semiconductor light emitting devices included in the expansion unit pixel may be formed of a combination of semiconductor light emitting devices respectively connected to different electrode lines.

As described above, the unit pixel is implemented except for some of the semiconductor light emitting devices included in the expansion unit pixel, and the excluded semiconductor light emitting devices are not individually determined for each expansion unit pixel, but each It is determined according to the degree of defect of the light emitting element array.

For example, among the light emitting device arrays arranged along the electrode lines included in each expansion unit pixel, the light emitting device array (hereinafter referred to as the'defective light emitting device array') including the most defective semiconductor light emitting devices is connected to the driving unit. It can be formed not to be.

As a more specific example, as illustrated in FIG. 15A, the defective light emitting device array may be determined in units of electrode line groups 1530a, 1530b, 1530c, and 1530d included in each expansion unit pixel. That is, among the light emitting device arrays each connected to electrode lines included in the same electrode line group, the light emitting device array having the most defective semiconductor light emitting devices is set as the defective light emitting device array. In addition, as shown in FIG. 15B, a connection path with the connection wiring 1560 may be blocked so that a driving signal of the driver is not transmitted to the corresponding defective light emitting device array. Blocking of the electrical connection between the defective light emitting device array and the driver may be implemented by disconnecting the electrical connection path of the corresponding electrode line.

As described above, in this example, in order to implement the unit pixel, which of the semiconductor light emitting devices included in each expansion unit pixel is excluded, depending on the degree of defect of the light emitting device arrays of the semiconductor light emitting devices included in the expansion unit pixel. Is determined. That is, in the extended unit pixel, even a semiconductor light emitting device that does not implement a unit pixel may be a semiconductor light emitting device without defects.

On the other hand, in order to determine the defective light emitting device array, the semiconductor light emitting device included in the display panel is lit (S1320, see FIG. 13).

As described above, in the display device, the driver generates a driving signal based on the electrode line, and different colors are emitted from each electrode line, but in the display panel, the same color (e.g., blue light ) Light can be emitted.

Accordingly, when performing the lighting test, the light emitting devices included in the display panel can be turned on at once. As another example, power may be supplied to the electrode lines of each extended unit pixel so that the lighting test is performed for each extended unit pixel. As another example, power may be supplied for each electrode line so that the lighting test is performed for each electrode line included in each expansion unit pixel. In this case, power is sequentially supplied to each electrode line to perform a lighting test.

When the semiconductor light emitting device is lit, the defective semiconductor light emitting device is inspected for each electrode line (S1330, see FIG. 13).

When power is supplied to the light emitting devices included in the display panel, defects of the light emitting device arrays connected to respective electrode lines are inspected. In this case, the defective light emitting device array can be set to have the largest number of light emitting device arrays that do not light up despite the supply of power. For example, an array of light emitting devices with the largest number of semiconductor light emitting devices that have failed in units of electrode lines included in the expansion unit pixel may be the defective light emitting device array.

More specifically, as shown in FIGS. 15A and 15B, in the first electrode line group 1530a, the fourth electrode line 1531 is determined to be the electrode line most connected to the defective semiconductor light emitting device 1540. I can. Accordingly, the light emitting device array corresponding to the fourth electrode line 1531 is set as the defective light emitting device array.

As another example, in the second electrode line group 1530b, the third electrode line 1532 is determined as the electrode line most connected to the defective semiconductor light emitting device 1540, and the corresponding light emitting device array is the defective light emitting device It is set up as an array. As another example, in the third electrode line group 1530c, the first electrode line 1533 is determined as the electrode line most connected to the defective semiconductor light emitting device 1540, and the corresponding light emitting device array is It is set up as an element array. In addition, as another example, in the fourth electrode line group 1530d, the second electrode line 1534 is determined as the electrode line most connected to the defective semiconductor light emitting device 1540, and the corresponding light emitting device array is It is set with an array of defective light emitting elements.

In this embodiment, a wiring structure capable of supplying power to each expansion unit pixel at one time is illustrated. Referring to FIG. 15B, a plurality of different electrode lines are connected to each expansion unit pixel formed by at least a portion of the plurality of semiconductor light emitting devices, and at least one of the plurality of different electrode lines is a base portion 1582 ) And an extension part 1584.

The base portion 1584b may be a portion connected to the connection wiring, and the extension portion 1584a may be a portion extending from the base portion 1584b. The extension portion includes first and second extension portions 1584c and 1584d, and the first and second extension portions 1584c and 1584d extend from a plurality of portions of the base portion 1584b and are arranged parallel to each other. Can be.

A plurality of connection wires connected to some of the plurality of different electrode lines are disposed on both sides of the connection wire connected to the base part 1584b. Further, each electrode line extends from the plurality of connection wirings, and the extended electrode lines are electrically connected to the first and second extension parts 1584c and 1584d, respectively.

More specifically, each of the plurality of electrode lines includes a connection part 1582 and a connection part 1584. The connection part 1582 is a portion arranged in parallel with a row formed by the semiconductor light emitting devices and connected to the semiconductor light emitting devices, and is formed in a straight line. The connection part 1582 is a part of an electrode line formed in a display area in which a semiconductor light emitting device is disposed, and may be connected to an auxiliary electrode (not shown) through a via hole penetrating through the wiring board 1510.

The connection part 1584 is disposed between the connection part 1582 and the connection wire 1560 and is connected to the connection part 1582 and the connection wire 1560, respectively, and includes the base part and the extension part. do.

For example, the connection part 1584 includes a plurality of lines extending from the connection part 1582 and an intersection line connecting at least some of the plurality of lines in a direction crossing the plurality of lines. . The electrode lines extending by the cross line may be electrically connected to the first and second extension parts 1584c and 1584d, respectively.

According to the above structure, the plurality of electrode lines may be short-connected to each other for every N electrode lines, and through this, power can be supplied to each expansion unit pixel as a unit.

In the present invention, at least some of the short connections may be disconnected so that N-1 electrode lines are used as R, G, and B data lines. For example, in the electrode line groups included in the display panel, when the electrode line connected to the defective light emitting element is determined, it is determined whether to proceed with laser processing for the corresponding electrode line (S1340), and by using laser processing, The electrode line is cut (S1350).

As illustrated in FIG. 15C, at least some of the electrode lines are cut off from the wiring board by the cutting. By cutting the electrode lines, electrode lines corresponding to R, G, and B for each expansion unit pixel form lines independent of each other.

The at least one electrode line whose electrical connection is disconnected is a connection path with the driving unit through laser processing in a state in which the driving signal of the driving unit can be transmitted to the plurality of semiconductor light emitting devices through the plurality of electrode lines. Is cut off. In addition, the electrode line in which the connection path with the driving part is disconnected, the electrode line in which the connection path with the driving part is disconnected, the number of damaged semiconductor light-emitting devices among the electrically connected semiconductor light-emitting devices becomes larger than that of other adjacent electrode lines. I can.

More specifically, referring to the first expansion unit pixel of FIG. 15C, a first disconnection portion 1591 with a disconnected wiring is formed at an intersection line connecting the first electrode line 1521 and the second electrode line 1522. Through this, the first electrode line 1521 may become an independent signal transmission line. In addition, a second disconnection portion 1592 is formed in the second extension portion 1584d, and through this, the second electrode line 1522 may become an independent signal transmission line. In addition, a third disconnection portion 1593 is formed in the fourth electrode line 1524, and through this, the fourth electrode line 1524 may become a line through which a signal is not transmitted. In this case, a signal can be transmitted to the third electrode line by the second cross line, and thus the third electrode line can be an independent signal transmission line.

In this way, only the electrode lines corresponding to R, G, and B can transmit signals by the combination of the disconnecting portions 1590, and a display device in which the signal transmission path is disconnected may be implemented in the other electrode lines.

In this case, any one of the first and second extension parts 1584c and 1584d is made to be disconnected from the electrical connection. Since the connection part always supplies power to the first and second extension parts 1584c and 1584d via the base part, a pair of electrode lines corresponding to the first and second extension parts 1584c and 1584d are always The power supply path must be broken. Therefore, in the cutting step (S1350), any one of the first and second extension parts 1584c and 1584d is disconnected from the electrical connection regardless of whether there is a defect.

That is, in the combination of the cut-off parts 1590 (see FIG. 15C), at least one cut-off part 1590 is disposed in any one of the first and second extension parts 1584c and 1584d.

The wiring and disconnection structure may be applied to the wiring of the display device disclosed in FIGS. 10 to 12C. Accordingly, the display device of the present invention includes N+M or more semiconductor light-emitting elements, which are M more than N, and N+M or more electrodes on the wiring board. It will have a line. Further, the M electrode lines are configured such that the signal supply paths are disconnected, and the electrode lines whose signal supply paths are disconnected are connected to the M semiconductor light emitting devices. Through the above structure, it is possible to limit the light emission of an LED array including a large number of defective semiconductor light emitting devices, thereby improving the yield of the display panel.

FIG. 16 is an enlarged view of part A of FIG. 1, and FIG. 17 is a cross-sectional view taken along FF of FIG. 16 for explaining another embodiment of the present invention.

In addition, the structure of the display device described above may be applied to a vertical semiconductor light emitting device. Hereinafter, a vertical structure will be described with reference to FIGS. 16 and 17.

16 is a perspective view for explaining another embodiment of the present invention, and FIG. 17 is a cross-sectional view taken along F-F of FIG. 16.

Referring to the drawings, the display device may be a display device using a passive matrix (PM) type vertical semiconductor light emitting device.

The display device 1600 includes a substrate 1610, a conductive adhesive layer 1630, and a plurality of semiconductor light emitting devices 1650. Hereinafter, for the same or similar configuration as the examples disclosed in FIGS. 7 to 9, the description of the present example is replaced by the first description, and the contents of the present example will be described centering on the parts different from the previous examples.

The substrate 2010 is a wiring substrate and may be any one of a flexible polyimide (PI), polyethylene naphthalate (PEN), and polyethylene terephthalate (PET) substrate. In addition, a first electrode 2020 is formed on the substrate 2010 as in the previous example. The conductive adhesive layer 2030 is formed on a plane on which the first electrode 2020 is located. The conductive adhesive layer 2030 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, etc., but hereinafter, the conductive adhesive layer 2030 is made of an anisotropic conductive film. Illustrates the case where this is implemented.

The semiconductor light emitting device 1650 may have a vertical structure, and is bonded to the conductive adhesive layer 1630. A plurality of second electrodes 1640 are disposed between the semiconductor light emitting devices in a direction crossing the length direction of the first electrode 1620 and electrically connected to the semiconductor light emitting device 1650. In this case, the second electrode 1640 is disposed on the conductive adhesive layer 1630.

For example, the first electrode 1620 and the second electrode 1640 are disposed in a direction crossing each other, and as in the previous embodiment, the first electrode 1620 becomes a vertical electrode, and the second electrode ( 1640) may be a horizontal electrode.

As illustrated, a plurality of semiconductor light emitting devices 1650 constitute a semiconductor light emitting device array along a plurality of electrode lines 1621. As in the embodiment described with reference to FIGS. 10 and 11A, a group of a plurality of semiconductor light emitting devices 1650 arranged along a vertical electrode forms one semiconductor light emitting device array. In addition, a phosphor of one color may be stacked along each of the plurality of electrode lines. Accordingly, one electrode line in the first electrode 1620 may be an electrode that controls one color. Therefore, red (R), green (G), and blue (B) may be sequentially disposed along the second electrode 1640, and a unit pixel (or unit pixel) may be implemented through this.

That is, among the semiconductor light emitting devices, semiconductor light emitting devices corresponding to R, G, and B are grouped to form each unit pixel. Meanwhile, in the present example, in addition to the semiconductor light emitting devices corresponding to R, G, and B in the expansion unit pixel as in the previous example, other semiconductor light emitting devices may be further included. Even if the at least one semiconductor light emitting device 1654 is further included in each expansion unit pixel, transmission of the driving signal of the driving unit to the at least one semiconductor light emitting device 1654 is blocked.

At least one of the plurality of light-emitting elements included in each expansion unit pixel may be blocked from a driving signal transmission path with the driving unit by disconnection of electrical connection with the driving unit. In this case, the disconnection of the electrical connection may be implemented according to the above-described mechanism in which a part of the electrical path on the connection wiring is disconnected. Through this, lighting of the at least one light emitting device 1654 may be restricted.

On the other hand, the plurality of electrode lines 1621 are connected to the connection wiring and become an electrical connection path for transmitting a driving signal of the driver to the semiconductor light emitting device arrays. A connection wiring (not shown) connecting a plurality of electrode lines included in the first electrode 1620 to a driver (not shown) of a plurality of semiconductor light emitting devices on one surface of the wiring board 1610 on which a plurality of electrode lines are arranged Is formed. The driving unit may be a driving semiconductor chip, and is mounted on a connection member (not shown) in the form of a chip-on-film (COF), and the connection wiring is connected to a connection member (not shown). More specifically, the connection wiring is connected to the first electrode and the second electrode, respectively, but in this embodiment, only the connection wiring connected to the first electrode will be described.

The connection wiring extends from the plurality of electrode lines 1621 along the column direction (or length direction) of the plurality of electrode lines. The connection wiring 1660 extends to a connection area (not shown) of the wiring board 1610 and is connected to the connection member (not shown) in the connection area (not shown). The connection area (not shown) may be formed at one end of the wiring board 1610. According to the structure described above, the driving unit drives the semiconductor light emitting device through the connection area (not shown), the connection wiring, and the electrode lines 1621, so that red, green, and blue A flexible display in which the light emitting devices of) constitute one pixel may be implemented.

In addition, a phosphor of one color may be stacked along each of the plurality of electrode lines 1621 of the first electrode 1620. A red phosphor and a green phosphor are stacked on the blue semiconductor light emitting devices to embody red and green, and a blue semiconductor light emitting device is used alone to emit blue light.

As illustrated, in each expansion unit pixel, a plurality of semiconductor light emitting devices may be disposed without stacking of phosphors. For example, in each expansion unit pixel, a plurality of blue semiconductor light emitting devices in which phosphors are not stacked may be provided in order to emit blue light, and one of them may be a semiconductor light emitting device excluded from forming the unit pixel.

According to the above structure, the present invention can be applied to a display device using a vertical semiconductor light emitting device.

Claims (20)

A wiring board on which electrodes having a plurality of electrode lines are disposed;
A conductive adhesive layer connected to the wiring board; And
And a plurality of semiconductor light emitting devices coupled to the conductive adhesive layer, forming a plurality of rows to correspond to the plurality of electrode lines, and electrically connected to adjacent electrode lines,
The plurality of electrode lines are connected to a connection wiring connecting the plurality of semiconductor light emitting devices to a driver,
Some of the electrode lines among the plurality of electrode lines are electrically connected to block transmission of the driving signal from the driver to the semiconductor light emitting device based on the number of damaged semiconductor light emitting devices among the plurality of semiconductor light emitting devices connected to each electrode line. The display device, characterized in that the light emission of the semiconductor light emitting devices electrically connected to some electrode lines disconnected from the electrical connection is limited. delete The method of claim 1,
The plurality of electrode lines,
A display apparatus comprising more than the number of electrode lines that transmit the driving signal to pixels of a display panel including the plurality of semiconductor light emitting devices. The method of claim 1,
At least some of the plurality of semiconductor light emitting devices form unit pixels emitting N colors, and at least N+1 electrode lines are provided for each unit pixel. The method of claim 1,
The plurality of semiconductor light emitting devices are arranged in a matrix structure,
A display device, characterized in that, among the semiconductor light emitting devices disposed in different columns and disposed in the same row, semiconductor light emitting devices corresponding to R, G, and B form each unit pixel. The method of claim 5,
A display device, wherein at least one of the plurality of semiconductor light emitting devices included in each unit pixel is blocked from a driving signal transmission path to the driving unit by disconnection of the electrical connection. delete The method of claim 6,
The electrode line,
A line portion formed along one direction; And
And a connection part extending from the line part to be connected to the connection wiring and configured to cut off the driving signal transmission path. The method of claim 5,
Each of the unit pixels further comprises a semiconductor light emitting device having limited light emission in addition to the semiconductor light emitting devices corresponding to the R, G, and B. The method of claim 1,
A plurality of different electrode lines are connected to each unit pixel formed by at least a portion of the plurality of semiconductor light emitting devices,
At least one of the plurality of different electrode lines includes a base portion connected to the connection wiring, and first and second extension portions extending from a plurality of portions of the base portion and disposed in parallel with each other. Device. The method of claim 10,
Any one of the first and second extension parts is characterized in that the electrical connection is cut off. The method of claim 10,
A display device, wherein a plurality of connection wires connected to some of the plurality of different electrode lines are disposed on both sides of the connection wire connected to the base unit. The method of claim 1,
Each of the plurality of electrode lines,
A connection portion disposed in parallel with the rows formed by the semiconductor light emitting devices and connected to the semiconductor light emitting devices; And
And a connection part connected to the connection wiring and including a plurality of lines extending from the connection part, and a cross line connecting at least some of the plurality of lines in a direction crossing the plurality of lines. Display device. The method of claim 1,
The plurality of electrode lines are short-connected to each other for every N electrode lines, and at least some of the short connections are disconnected so that N-1 electrode lines are used as R, G, and B data lines. Display device. The method of claim 1,
At least one electrode line with the electrical connection disconnected,
A display device, characterized in that, while the driving signal of the driving unit can be transmitted to the plurality of semiconductor light emitting devices through the plurality of electrode lines, a connection path with the driving unit is cut off through laser processing. The method of claim 15,
The electrode line in which the connection path with the driving part is cut off,
A display device, wherein the number of damaged semiconductor light emitting devices among electrically connected semiconductor light emitting devices is greater than that of other adjacent electrode lines. delete A wiring board on which electrodes are disposed;
A conductive adhesive layer covering the wiring board;
It is bonded to the conductive adhesive layer and includes a plurality of unit pixels each including a plurality of semiconductor light emitting devices emitting R, G, B,
The plurality of unit pixels are formed to be electrically connected to the electrode, and are formed to implement the light emission of the R, G, and B except at least one of a plurality of semiconductor light emitting devices included in each unit pixel,
A display device, wherein a plurality of electrode lines are connected to each of the plurality of unit pixels, and at least some of the plurality of electrode lines are short-connected to each other. The method of claim 18,
At least a portion of the short connection is disconnected so that the plurality of electrode lines are used as the R, G, and B data lines. The method of claim 19,
The plurality of electrode lines are short-connected to each other for every N electrode lines, and as at least some of the short connections are disconnected, N-1 electrode lines are used as the R, G, and B data lines. Display device characterized by.

Images