CN108682312A - A kind of manufacturing method of LED array device - Google Patents
A kind of manufacturing method of LED array device Download PDFInfo
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- CN108682312A CN108682312A CN201810454421.XA CN201810454421A CN108682312A CN 108682312 A CN108682312 A CN 108682312A CN 201810454421 A CN201810454421 A CN 201810454421A CN 108682312 A CN108682312 A CN 108682312A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
A kind of manufacturing method of LED array device, using vertical structure LED device and motherboard, LED component is equipped with the first magnetic portion being made of soft magnetic metal；Motherboard is equipped with the second magnetic portion being made of retentive material, and：The basal layer of nonmagnetic insulation is set on the first plate body face；Setting includes the drive circuit layer of multiple pads on basal layer, and pad is corresponding with the second magnetic portion；LED component is spread in drive circuit layer, the first magnetic portion by the second magnetic portion on pad the active force in magnetic field and so that LED component is positioningly adsorbed onto on pad；So that LED component is mutually bonded with pad；So that basal layer is separated from each other with motherboard, obtains LED array device.This method can more rapidly, efficiently the LED component of flood tide is shifted and is bonded in drive circuit layer.
Description
Technical field
The present invention relates to a kind of manufacturing methods of LED array device, belong to the technology that LED is shown, especially micro- LED is shown
Field.
Background technology
Micro- light-emitting diode display of such as micro-LED or mini-LED are generally by the small light emitting diode of flood tide (LED)
It shifts and is bonded to the display constituted in driving circuit base.Micro- light-emitting diode display have display performance it is good (actively shine,
High brightness, high contrast, high colour gamut, wide viewing angle, response are fast), energy saving, long working life the advantages that, it is considered to be compare liquid crystal
Show the more advanced type of display of device, organic light emitting display.In the prior art, simultaneously by the small LED component transfer of flood tide
It is bonded in driving circuit base to constitute the LED array device as micro- light-emitting diode display main body, transfer head pair is usually used
The method that (or more batches) LED component is shifted one by one is come what is realized, and transfer velocity is slow, efficiency is low, and it is aobvious to be difficult to realize micro- LED
Show the mass production of device.
As a result, in the manufacture of micro- light-emitting diode display, how more efficiently by the small LED component transfer of flood tide and key
It closes in the base of driving circuit to form LED array device, is micro- light-emitting diode display manufacturing technology in one faced at present
Major issue.
Invention content
The purpose of the present invention is to provide a kind of manufacturing method of LED array device, can more rapidly, efficiently by flood tide
LED component shift and be bonded in driving circuit base, used technical solution is as follows：
A kind of manufacturing method of LED array device, it is characterized in that：
The LED component of multiple vertical structures is provided, the inner side and outer side of the LED component is respectively provided with first electrode and the second electricity
Pole, the first electrode are equipped with the first magnetic portion for being made of soft magnetic metal, and the surface of first magnetic portion is equipped with the
One bonded layer；
A motherboard is provided, the lateral surface of the motherboard is the first plate body face, and being defined on first plate body face has forming array
Multiple bonding positions, the bonding position are equipped with the second magnetic portion being made of retentive material；And it is walked using following processing
Suddenly：
Step 1: the basal layer of nonmagnetic insulation is arranged on first plate body face；
Step 2: drive circuit layer is arranged on the basal layer, the drive circuit layer includes multiple pads and is connected to
The driving circuit of the pad, the pad are on the bonding position of motherboard, and at least its surface is set as the second bonded layer；
Step 3: the LED component is spread in drive circuit layer, the first magnetic portion by the second magnetic portion pad it
The active force in upper magnetic field and so that LED component is positioningly adsorbed onto on pad and first bonded layer and the second bonded layer made to paste
Tightly；
Step 4: the first bonded layer and the second bonded layer is made to be bonded, the thus first electrode structure of the pad and LED component
At electrical connection；
Step 5: the basal layer is made to be separated from each other with motherboard, LED array device is obtained.
Specifically, the LED component can be the inorganic LED devices of the various emission wavelengths of the series such as GaP, GaAs, GaN
Part.The LED component is the LED component of vertical structure, i.e. the poles P and the poles N (i.e. described first and second electrode) difference of LED component
The both sides opposite in device.The first electrode can be doping semiconductor layer (such as p-type exposed in LED component side
Layer), or in the conductor film layer that LED component side is covered on doping semiconductor layer, (Ni being such as covered in P-type layer is thin
Film or Ti films)；The second electrode also may be used generally in the exposed doping semiconductor layer in the LED component other side (such as N-type layer)
Thinking the transparent conductive film layer that is covered on doping semiconductor layer in the LED component other side, (ITO being such as covered in N-type layer is thin
Film).Using epitaxy (as used the semiconductor layer (such as P-type layer, N-type layer, quantum well layer) of vertical structure LED device
MOCVD realizes extension) it is grown on epitaxial substrate (such as sapphire), (generally make laser penetration finally by laser lift-off
Epitaxial substrate is irradiated to the bottom of semiconductor layer and its bottom is made to decompose) etc. stripping means separated from epitaxial substrate
Come；As a result, the first magnetic portion of LED component and the first bonded layer can be first passed through before LED strippings vapor deposition, magnetron sputtering,
On plating, the methods of spraying plating setting to first electrode (final is the inside of LED component), finally just by semiconductor layer and above-mentioned
Metallic diaphragm is stripped down from epitaxial substrate, obtains the vertical structure LED that inside carries the first magnetic portion and the first bonded layer
Device.
First magnetic portion is soft magnetic metal, it is ensured that the first magnetic portion is conductive for formation first
The connection of electrode, and its under general state without magnetic field (soft magnetic metal be with low-coercivity and high magnetic permeability metal,
It is typically in demagnetized state and without magnetic field), ensure that each LED component will not attract each other and cause to reunite.Described first is magnetic
Portion is preferably soft magnetic metal layer (the opposite magnetic being made of the magnetic metals such as iron, nickel, manganese (such as pure iron) or its alloy (such as silicon steel)
Conductance>100).Preferably, the first magnetic portion can be used electro-plating method and be formed, to obtain larger thickness (1 200 μm), by
One magnetic portion is designed thicker, the magnetic attraction between the first and second magnetic portion can be not only improved in step 3, in LED component
During being removed from epitaxial substrate, the first magnetic portion can also be used to support semiconductor layer to avoid it in stripping process
It is broken.
First magnetic portion is preferably formed using patterned method, for example, photosensitive tree can be coated on the first electrode
Fat is simultaneously patterned into multiple blocky holes for exposing first electrode, keeps soft magnetism golden by the plating that is powered on the first electrode
The plating film layer of category is grown in the blocky hole of photosensitive resin, is finally peeled away photosensitive resin and is left block-like first magnetism
Portion.In the stripping process of semiconductor layer, the semiconductor layer of the first magnetic portion covering can keep complete, and without the first magnetic portion
The semiconductor layer of covering will be crushed (or being crushed in the follow-up process), form multiple dimensional profiles and covered by the first magnetic portion
LED component defined in region, such as round LED device --- the size of the preferred LED component is 5 800 μm.
In order to ensure in step 3, LED component can overturn or remain the first and second bonded layer be mutually adjacent to it is correct
Posture, in the LED component, preferably the first magnetic portion be in LED component partially inside position, as a result, if LED component with
Opposite posture absorption, farther out, adsorption capacity is weaker for the first and second magnetospheric distance, is easy the certain purge mechanism pair of design
It is purged, and leaves behind the correct LED component of posture.And specifically, it is preferable to the first magnetic portion setting LED component partially inside and
Thickness is no more than the 1/2 of LED component integral thickness.Due in LED component, the thickness of semiconductor layer and first electrode be difficult with
Meaning ground is adjusted, it is therefore further preferred to which also pad passes through no magnetic metal layer equipped with no magnetic metal layer between the first magnetic portion and first electrode
Thickness adjust, be easy so that the first magnetic portion thickness be no more than LED component integral thickness 1/2, the no magnetic metal layer
Can be nonmagnetic (in the present specification, the relative permeabilities such as gold, silver, copper, aluminium<10 material is considered non-magnetic material)
The constituted film layer of metal or alloy, can by be electroplated and utilize and above-mentioned graphical side identical with the first magnetic portion
Method is arranged prior to the first magnetic portion on first electrode.
First bonded layer can directly for the surface layer of the first magnetic portion, (the second bonded layer needs to use and first is magnetic
Portion has the material of good welding performance), or the film layer set in addition dedicated for bonding.In the first bonded layer
In the case of for film layer set in addition, may be used the methods of plating, spraying plating, hot-dip be formed in the first magnetic portion it
On, in order to not influence the magnetic attraction between the first and second magnetosphere in step 3, the preferably thickness of the first bonded layer is no more than first
The 1/2 of magnetic portion.Preferably, first bonded layer can be low-melting-point metal layer or soft metal layer, in order in step
The first and second bonded layer is set to be bonded by way of heat up fusion or pressurization pressing in four.When first bonded layer is low
When melting point metal layer, it is preferably indium, the metal layer of tin or with indium or tin alloy-layer as main component；And work as first key
When conjunction layer is soft metal layer, it is preferably the soft metal layer that gold, silver etc. are easy to pressure welding.In addition to this, first bonding
Layer is preferably also the nano metals coatings such as nano silver, nanogold, generally can make the first and second key by way of heating up and pressurizeing
It closes layer to be bonded, the temperature and pressure needed for bonding is relatively low, and technique applicability is preferable.
The motherboard is preferably glass plate (such as simple glass, quartz glass, sapphire glass), ceramic wafer or nonmagnetic
Metallic plate, or the compound plate body of above-mentioned equal materials, can be to be formed by LED array in above-mentioned manufacturing process
Device provides good support, and does not interfere with the magnetic field of the second magnetic portion.Second magnetic portion is by retentive material structure
At, specifically, can be by Al-Ni-Co series permanent-magnet alloy, siderochrome cobalt system permanent-magnet alloy, permanent-magnet ferrite, rare earth permanent-magnetic material
Or the compound retentive material that above-mentioned material is constituted is constituted；Preferably, the second magnetic portion is made of Nd Fe B alloys, as one
Kind is commonly used and the retentive material of excellent performance, the second magnetic portion are made of Nd Fe B alloys with better economy.At this
In one preferred embodiment of invention, the bonding position of the motherboard is equipped with receiving hole, and second magnetic portion be embedded receiving hole it
It is interior, the second magnetic portion is embedded within the receiving hole of motherboard, the flat of the first plate body face can be not only kept, can also deepen
Receiving hole makes the second magnetic portion have the volume of bigger to enhance its magnetic field.Preferably, the receiving hole by laser engraving,
The processes such as mask etch, mask electrolysis (in the case that motherboard is metallic plate) are formed on the first plate body face of motherboard, by
This, which can make to be formed by, accommodates hole shape and position very accurately.The receiving hole can be blind hole or leading to through motherboard
Hole.Second magnetic portion can first be made as shape corresponding with above-mentioned receiving hole, such as cylindric, be then embedded within receiving
Among hole.
In the LED component in the case of small-sized and enormous amount, second magnetic portion also requires that size very
Small and enormous amount, in order to which more efficiently the second magnetic portion is arranged into the receiving hole of motherboard, in the preferred side of the present invention
In case, the forming method of second magnetic portion is：Powder (such as neodymium iron boron of retentive material is filled in the receiving hole of motherboard
Powder can be made lotion by powder), high-temperature process is carried out to motherboard so that the retentive material within receiving hole is powder sintered
For the second magnetic portion.Specifically, by the powder extrusion of retentive material or coated mother can be scraped after motherboard forms receiving hole
The surface of plate makes it be squeezed into each receiving hole, and 900 1200 DEG C of high-temperature baking is carried out to motherboard (can be simultaneously in receiving hole
External pressurized) with by retentive material it is powder sintered be the second magnetic portion, thus without holding the second magnetic portion is one by one embedded
It receives in hole, producing efficiency is very high.In order to enable retentive material powder can be more efficiently filled into receiving hole, it is excellent
It is through-hole to select the receiving hole, and infiltration situation of the retentive material powder in receiving hole thus can be detected from the other side of motherboard
(preferably infiltration completely, squeezed out from the other side).In order to enable motherboard can adapt to the sintering temperature of retentive material powder,
In the further preferred embodiment of the present invention, nonmagnetic metal or alloy of the motherboard by fusing point more than 1500 DEG C is made,
Specifically, can be the metallic plate that is made by titanium, molybdenum, tungsten, chromium or its alloy, this motherboard not only mechanical structure it is strong,
It is nonmagnetic, additionally it is possible to be resistant to high temperature, the technique for being suitble to above-mentioned filling, sintering.In addition to this, in order to bearing retentive material
The sintering high temperature of powder, the motherboard also preferably use the ceramic material of high temperature resistant and good mechanical property, as zirconium oxide is made pottery
Porcelain is made.
Preferably, after the second magnetic portion is set up on motherboard, in order to enable the first plate body face keeps flat, at least also
First plate body face of motherboard can be processed by shot blasting.In order to enable in step 5, basal layer is easy to be separated from each other with motherboard,
After motherboard is processed by shot blasting, viscosity reduction processing preferably also is carried out to the first plate body face, is such as set on the first plate body face
Set the coating or coating (being formed by the way of spraying or vacuum coating) that an organosilicon polymer or fluoropolymer are constituted.
In order to ensure that the second magnetic portion has correct and enough magnetic field, after motherboard completion or above-mentioned processing step
In, can be placed in motherboard in magnet charger makes high-intensity magnetic field penetrate motherboard and is magnetized that (such as motherboard is too big, can to its second magnetic portion
It is magnetized by the way of scanning).It is preferred that the magnetic field of magnet charger passes perpendicularly through motherboard when magnetizing, the thus magnetic of the second magnetic portion
Field direction can be penetrated more efficiently perpendicular to the first plate body face to the top of pad.Second magnetic portion is carried out
It magnetizes, can correctly activate the second magnetic portion sinter molding later or (such as drive circuit layer made after being demagnetized by high temperature
High temperature plated film in journey and annealing, the heating of the first and second bonded layer bonding) remnant field.Preferably, in step 2 and step
It magnetizes to the second magnetic portion between three, thus can repair and (be reused in motherboard in step 2 or upper primary step 4
In the case of) in, demagnetized state that the second magnetic portion is likely to occur since temperature is excessively high.
In step 1, non-magnetic insulating base layer is set on the first plate body face of motherboard, as drive circuit layer
The basal layer of substrate requires not shield or weaken the magnetic field that the second magnetic portion is through on pad and the separation in step 5
In journey to thereon drive circuit layer and LED component have good supporting role.Insulation may be selected, without magnetic in basal layer as a result,
Property, the organic film with larger tensile resistance can be specifically polyester (PET), cyclic olefin polymer (COP), poly-
The polymer films such as acid imide (PI).Preferably, the basal layer is polyimide film, in all kinds of polymer films, polyamides
Imines film not only has good stretch-proof, chemical-resistance, also has higher glass transition temperature (400 DEG C or more), thus
Various hot conditions (such as high temperature plated film, annealing) when can not only bear subsequently to make drive circuit layer and electrochemical conditions are (such as
Etched film), in step 4, moreover it is possible to bear the first and second bonded layer bonding needed for high temperature (within 350 DEG C, it is assumed that first,
Two bonded layers are bonded using the method for heating fusion), and it is separated from each other the process of (step 5) in basal layer and motherboard
In have less deformation, to avoid thereon drive circuit layer and device layer be damaged.The thickness of the polyimide layer
It can be set in the range of 2 200 μm, running through and keep preferable mechanical strength in favor of the second magnetic portion magnetic field.Polyamides
Imine layer can be formed by the coating polyamic acid solution on the first plate body face of motherboard and by high temperature or catalytic polymerization,
The Kapton of forming can be adhered to by certain adhesive layer on the first plate body face.
In drive circuit layer set by step 2, the pitch of the preferably described pad is the 1.2 of LED component size
5.0 again.The drive circuit layer can be passive drive layer, or include the active matrix driving layer of active device.It is driving
In the case that circuit layer is passive drive layer, it may be designed as each pad and drawn by lead, be also designed to intersect square
Battle array --- drive circuit layer can be only designed as constituting the row electrode (pad setting is expert on electrode) of cross matrix, and constitute and hand over
Matrix column electrode is pitched until being configured again after LED component bonding.Above-mentioned drive circuit layer, can (such as magnetic control splashes by deposition
Penetrate, be deposited) conductive film layer on basal layer, especially metallic diaphragm (such as Cu, Mo-Al-Mo) is through photoetching graphic method
It is formed.In the case where drive circuit layer is active matrix driving layer, drive circuit layer may include independent for controlling each LED component
Luminous TFT devices (thin film transistor (TFT)), specifically, the TFT devices can by silicon (such as α-Si), oxide semiconductor or
That organic semiconductor is constituted, with sufficient driving current when in order to allow LED component to work, the TFT devices preferably by
The higher low temperature polycrystalline silicon of electron mobility (LTPS) or indium gallium zinc (IGZO) are constituted.Above-mentioned active matrix driving layer, LED devices
The design of part driving circuit can refer to the driving design of existing AM-OLED display devices, (include such as two TFT using 2T1C
Device and a capacitance, are commonly used on the driving circuit of AMOLED) or it is more complicated (as compensation circuit is further added)
Pixel driver design, different is only that its pixel output is changed to the pad, and the pad equally can be by above-mentioned gold
Belong to film layer (such as Cu, Mo-Al-Mo) to be formed through photoetching graphic method.
The surface of the pad can (it be special and corresponding generally to require the first bonded layer directly as the second bonded layer
Bonded layer), also can other film layer be set on the surface of pad and be used as the second bonded layer.In step 4, for the ease of
First bonded layer is by heating treatment the first and second bonded layer mutually to be welded in the case of low-melting-point metal layer, institute
It can be the metal layer for being easy melting welding (wellability is good when melting welding) to state the second bonded layer, such as the coating of gold, silver or copper, alternatively, institute
The metal layer of low melting point can also be similarly by stating the second bonded layer.Second bonded layer is alternatively soft metal layer, and such as thicker is pure
Gold plate, in order in the step 4, make the first bonded layer be bonded with second by applying pressure on the outside of LED component
Layer mutually bonds.Or second bonded layer be the nano metals coating such as nano silver, nanogold, the pressurization that heats up can be passed through
Mode makes the first and second bonded layer be bonded, but the temperature and pressure needed for its bonding is relatively low, and technique applicability is preferable.
Set in addition in the second bonded layer, the second bonded layer may be used plated film and be combined (such as vapor deposition, magnetic control bonding, plating)
Certain patterned way forms (can be graphical simultaneously with pad), (can also can be led to using plating based on the figure of pad
Overdrive circuit layer import electric current realize plating) or hot-dip formed, in addition to this, the second bonded layer also can be used low melting point gold
The lotion or nano metal coating of metal particles, which are printed or be printed upon on pad, to be formed.
Preferably, after step 2 sets up drive circuit layer, alignment layers, institute can be also set on drive circuit layer
It states alignment layers to be made by insulating materials, thickness is preferably 0.6 2.0 times of the LED component height, the alignment layers
Including be bonded the corresponding location hole in position so that in step 3, the LED component is by the insertion location hole by
Two magnetic portions are sucked.Equipped with above-mentioned alignment layers, when LED component deviates without embedded location hole, due to LED
Device deviate the second magnetic part top and alignment layers space buffer action, the second magnetic part at a distance from the first magnetic portion compared with
Far, thus its magnetic attraction is weaker, and the translation of LED component is without limitation, thus is difficult to form stable absorption, only when LED devices
Part is embedded within location hole, and the second magnetic part is closer at a distance from the first magnetic portion, and the translation of LED component is limited, can
Relatively stable absorption is formed, above-mentioned alignment layers can be such that LED component is more accurately adsorbed on bonding position as a result,.The positioning
The location hole of may be sized to the LED component size 1.1 1.5 times in hole, the size range can play preferably
Positioning action, if location hole setting is more than the size, positioning is inaccurate, and if location hole is less than the size, can lead
Cause LED component that can not effectively be adsorbed in step 3.
Using location hole to the excretion of the LED component more than its size, the LED array to be manufactured also may make to fill
Set colorization.Preferably, the LED component includes at least the first LED component, the second LED component and that size is successively decreased successively
Three LED components, the first LED component, the second LED component and third LED component have different luminescent colors；The location hole is extremely
Include the size first positioning hole, second location hole and the third location hole that successively decrease successively less, first positioning hole, second location hole and
The size of third location hole is respectively 1.1 1.5 times of first LED component, the second LED component and third LED component；With
And in step 3, the first LED component, the second LED component and third LED component are spread into the drive circuit layer successively
On so that the first LED component, the second LED component and third LED component are sequentially embedded to the first trepanning, the second trepanning and third
In trepanning.Specifically, first, second and third LED component can be respectively transmitting blue and green light, feux rouges GaN, GaP and
The adjacent ratio of GaAs systems LED component, the first, second and third LED component size could be provided as 1.6 2.0 (i.e. the first LED components
Size be 1.6 2.0 times of the second LED component, the size of the second LED component is 1.6 2.0 times of third LED component),
In step 3, when the first LED component is spread in the drive circuit layer, it can not be embedded into second and third location hole
And it can only be embedded in first positioning hole (it need to be made to take first positioning hole), similarly, second and third LED component can only be sequentially embedded
In second and third location hole, thus LED modules with different colors device is respectively embedded into corresponding location hole and is connected with corresponding pad,
So that the LED array device colorization to be manufactured.After the first, second and third LED component, may further be provided the 4th,
The different LED component of 5th even more sizes, color, to further increase the colour gamut model for the LED array device to be manufactured
It encloses, however, excessive color setting can cause technical process and dot structure excessively complicated.
Preferably, the alignment layers are photosensitive resin coating, and thus the location hole can easily use yellow light technique
(patterning process for exposing, developing) is formed.Preferably, the alignment layers may be organic silicon coating, polyimides painting
Layer or oil resistant layer of ink, thus its can bear the high temperature of the bonding of the first and second bonded layer (assuming that the first and second bonded layer is adopted
It is bonded with heating mode), the location hole can be by laser engraving technique, mask etch technique or micro-nano imprint technique shape
At the position shape of the resulting location hole is accurate, can ensure the insertion effect of LED component.In order to enable in step
In three, the LED component can more efficiently be embedded into the location hole, and the preferably described location hole is circle, the LED
Device has circular profile, sets LED component to have circular profile, can be embedded into positioning at different angles
Kong Zhong, because improving the efficiency of embedded location hole.
In step 3, the method that LED component is spread in drive circuit layer can be divided into dry dispersion method and wet type point
Arching pushing.Dry dispersion method includes smearing the dried powder that flood tide LED component is constituted or being dispersed in drive circuit layer, thus
So that LED component is adsorbed close to pad by the second magnetic portion of pad behind, then removes the excessive powder of no absorption.In wet type
In dispersion method, LED component is first distributed to the dispersion liquid that LED component is constituted in liquid, then make the dispersion liquid and driving circuit
Layer contact, thus makes the LED component in dispersion liquid be adsorbed on the pad, and wet type dispersion method is easy the stream by dispersion liquid
It moves to keep the dispersion of LED component, and is easy to control concentration of the LED component in dispersion liquid, be conducive to adsorb LED component
The control of process.It is further preferred that equipped with above-mentioned alignment layers, it can also make alignment layers that there is centainly hydrophobic
Property, for example, the dispersion liquid is made to have more than 100 ° of contact angle on the surface of the alignment layers so that dispersion liquid by
The repulsion of alignment layers and tend to the contact pads in location hole, be conducive to draw the LED component being suspended in dispersion liquid
It leads on the position of location hole so that the adsorption process of LED component more precise and high efficiency.Above-mentioned hydrophobic alignment layers may be used
The higher high temperature resistant ink of hydrocarbon alkene content is made, and dispersion liquid uses water as solvent.
Preferably, in step 3, certain purge mechanism is additionally provided with to adsorbing bad or bad position LED component
It is purged, the purge mechanism uses but is not limited to following methods：1), using liquid or gas to the surface of drive circuit layer
It is rinsed, the LED component for adsorbing bad or bad position is rinsed out；2), apply mechanical oscillation on the motherboard, with
The LED component for adsorbing bad or bad position is shaken off；3), apply opposing magnetic field on the lateral surface of motherboard, will adsorb
Bad or bad position LED component sops up；4), apply goo on the lateral surface of motherboard, bad or position will be adsorbed
Bad LED component is set to stick out.Above method or combinations thereof, which can be disposed effectively, adsorbs bad or bad position LED devices
Part, and retain and adsorb good, the accurate LED component in position.
Based on material type used by the first and second bonded layer, in step 4, the bonding of the first and second bonded layer can lead to
Heating melting welding (as welded using reflow ovens), pressure welding (such as ultrasonic bonding) or the combination of the two are crossed to realize, so far,
The LED array device using basal layer as substrate is formd on motherboard.
Preferably, after step 4, a top conductive layer is also further covered on the second electrode to constitute LED component
Second electrode connection.Specifically, the top conductive layer can be transparency conducting layer, such as tin indium oxide, zinc oxide aluminum or oxygen
Change the sputtering coating of indium gallium zinc or the coating of transparent conductive polymer (such as PEDOT) or nano silver, graphene etc. are transparent
Conductive layer.The top conductive layer may be the graphical nontransparent conductive film that is contacted with second electrode of part, such as with second
The metallic film of electrode edge contact.
Preferably, the LED array device further includes filling up layer, and the layer of filling up is made after step 4, institute
It states top conductive layer setting filling up on layer, setting steps are as follows：On the alignment layers (outside for including LED component)
Layer is filled up in covering, and the layer of filling up penetrates into and fills up the gap between LED component and alignment layers；The layer of filling up is consolidated
Change and graphical treatment is to form the exposing mouth for exposing LED component second electrode；And institute is set on mouth filling up layer and exposing
It states top conductive layer and is connected with the second electrode for constituting LED component.It is described to fill up layer, it is mainly used for filling up LED component and determining
Gap between the layer of position, thus can provide more flat surface in order to which the top conductive layer is arranged and avoids first and second
Short circuit between electrode.The optional preferable coating material of levelability of layer of filling up is coated on such as ink or photosensitive resin
After the outside of alignment layers and LED component, it can flow into and fill up the gap between alignment layers and LED component, and finally lead to
The method of overbaking or ultra-violet curing cures.Preferably, the layer of filling up is a photosensitive resin coating, using photosensitive resin
Coating is easy to be patterned by yellow light technique to form the exposing mouth.It is further preferred that the layer of filling up can be with
For black or dark color photosensitive resin coating, as a result, its can also make LED array device surface (in addition to LED component it
Black or dark color are kept outside), readability when being conducive to improve LED array device as display device under strong light environment.
In order to enable made LED array device colorization, can be also further arranged on top conductive layer colored
Change film layer.For example, in the case where LED component is blue-ray LED device, LED component can be defined as to the first, second and third LED devices
At least yellow fluorescence coating is arranged on the first and second LED component for part, then red, green filter coating is separately positioned on first,
On two LED components；In addition to this, red and green color conversion can also be respectively set on the first and second LED component
Layer, such as red, green fluorescent coating or quantum dot coating.The methods of printing, printing, yellow light may be used in above-mentioned colorization film layer
It is configured.
In the step 5, the methods of can be by mechanically pulling off makes basal layer be separated from each other with motherboard.It specifically, can be straight
LED array device will be made by connecing tears off out from motherboard, stripping that also can be certain in the upper attaching for making LED array device
It tears off out from motherboard from gummed paper (such as ultraviolet visbreaking gummed paper), then by it, it is excessive and make to avoid LED array device stress
Circuit layer thereon breaks down.In addition to this it is possible to liquid or gas are filled between basal layer and motherboard, so that basic
Layer is detached with motherboard.
Compared with the prior art, the beneficial effects of the present invention are：
In manufacturing method provided by the invention, using magnetic field caused by the second magnetic part being arranged on motherboard to LED devices
The magnetic attraction of the first magnetic part of part so that LED component can be automatically adsorbed onto on the pad to be bonded, wherein first and second
Magnetic attraction between magnetic portion can not only be such that LED component is adsorbed onto on pad, moreover it is possible to realize positioning and the orientation of LED component,
Thus in practical operation, LED component is spread on the first plate body face of motherboard, you can realize the LED component of flood tide is same
When be transferred on corresponding pad, this process compared with the prior art use transfer head to (or more batches) LED component one by one into
The method of row transfer, flood tide transfer efficiency will significantly increase.
In above-mentioned manufacturing method, since LED component is to shift and be bonded on the drive circuit layer based on basal layer
, final basal layer is stripped out from motherboard so that motherboard may be reused, as a result, in actual manufacturing process simultaneously
The making that need not repeat motherboard greatly reduces the difficulty and cost of above-mentioned manufacturing process.Further, since basal layer
Flexible material can be used to be made, the LED array device made by above-mentioned manufacturing method can also be flexible, meet display
The development trend of technology.
The manufacturing method of the present invention is further described in detail with embodiment below by way of attached drawing.
Description of the drawings
Fig. 1 is the monitor overall floor map of embodiment one；
Fig. 2 is the local pixel floor map of the display of embodiment one；
Fig. 3 is the pixel diagrammatic cross-section of the display of embodiment one；
Fig. 4 is by embodiment one using the shape and film layer schematic diagram of LED；
Fig. 5 is by embodiment one using the manufacturing step (1) of LED；
Fig. 6 is by embodiment one using the manufacturing step (2) of LED；
Fig. 7 is by embodiment one using the manufacturing step (3) of LED；
Fig. 8 is by embodiment one using the manufacturing step (4) of LED；
Fig. 9 is by embodiment one using the manufacturing step (5) of LED；
Figure 10 is by embodiment one using the manufacturing step (6) of LED；
Figure 11 is the integral planar schematic diagram of motherboard used by embodiment one；
Figure 12 is the partial schematic diagram of motherboard used by embodiment one；
Figure 13 is motherboard used by embodiment one, the setting method schematic diagram of the second magnetic portion；
Figure 14 is the diagrammatic cross-section of motherboard used by embodiment one；
Figure 15 is the display of embodiment one, the schematic diagram of basis of formation layer in manufacturing method；
Figure 16 is the display of embodiment one, and the schematic diagram of row electrode is formed in manufacturing method；
Figure 17 is the display of embodiment one, and the schematic diagram of row electrode copper metal layer is formed in manufacturing method；
Figure 18 is the display of embodiment one, and the schematic diagram of alignment layers is formed in manufacturing method；
Figure 19 is the display of embodiment one, and the schematic diagram of pad is formed in manufacturing method；
Figure 20 is the display of embodiment one, the schematic diagram to magnetize to the second magnetic portion in manufacturing method；
Figure 21 is the display of embodiment one, and the schematic diagram of LED component insertion location hole is made in manufacturing method；
Figure 22 is the display of embodiment one, removes the schematic diagram of bad LED component in manufacturing method using magnet；
Figure 23 is the display of embodiment one, LED array device (semi-finished product) schematic diagram；
Figure 24 is the display of embodiment one, and the schematic diagram of bottom electrode connection is formed in manufacturing method；
Figure 25 is the display of embodiment one, and the schematic diagram for filling up layer is formed in manufacturing method；
Figure 26 is the display of embodiment one, and the schematic diagram of top electrode layer is formed in manufacturing method；
Figure 27 is the display of embodiment one, and the schematic diagram of fluorescent coating is formed in manufacturing method；
Figure 28 is the display of embodiment one, and LED array device is separated motherboard using stripping gummed paper in manufacturing method
Schematic diagram；
Figure 29 is the display of embodiment one, and the schematic diagram of stripping gummed paper is removed in manufacturing method；
Figure 30 is the display of embodiment one, the schematic diagram of another formation top electrode layer in manufacturing method；
Figure 31 uses LED, the schematic diagram of an alternative scheme of manufacturing step (6) by embodiment one；
Figure 32 is the monitor overall floor map of embodiment two；
Figure 33 is the pixel schematic diagram of the display of embodiment two；
Figure 34 is the sub-pixel diagrammatic cross-section of the display of embodiment two；
Figure 35 is motherboard used by embodiment two, forms the schematic diagram of receiving hole；
Figure 36 is motherboard used by embodiment two, forms the schematic diagram of the second magnetic portion；
Figure 37 is the diagrammatic cross-section of motherboard used by embodiment two；
Figure 38 is the display of embodiment two, the schematic diagram of basis of formation layer in manufacturing method；
Figure 39 is the display of embodiment two, and the schematic diagram of buffer layer and drive circuit layer is formed in manufacturing method；
Figure 40 is the display of embodiment two, the diagrammatic cross-section of drive circuit layer；
Figure 41 is the display of embodiment two, the floor map of the drive circuit layer of sub-pixel；
Figure 42 is the display of embodiment two, the circuit diagram of the drive circuit layer of sub-pixel；
Figure 43 is the display of embodiment two, and the schematic diagram of alignment layers is formed in manufacturing method；
Figure 44 is the display of embodiment two, and the schematic diagram of the second bonded layer is formed in manufacturing method；
Figure 45 is the display of embodiment two, and sub-pixel cuts open a layer schematic diagram；
Figure 46 is the display of embodiment two, the schematic diagram to magnetize to the second magnetic portion in manufacturing method；
Figure 47 is the display of embodiment two, and the schematic diagram of LED component insertion location hole is made in manufacturing method；
Figure 48 is the display of embodiment two, and the schematic diagram of bottom electrode connection is formed in manufacturing method；
Figure 49 is the display of embodiment two, and the schematic diagram for filling up layer is formed in manufacturing method；
Figure 50 is the display of embodiment two, and the schematic diagram of top electrode layer is formed in manufacturing method；
Figure 51 is the display of embodiment two, and the schematic diagram of colorization layer is formed in manufacturing method；
Figure 52 is the display of embodiment two, and display is separated in manufacturing method using stripping gummed paper the signal of motherboard
Figure；
Figure 53 is the display of embodiment two, and the schematic diagram of stripping gummed paper is disposed in manufacturing method；
Figure 54 is the pixel schematic diagram of the display of embodiment three；
Figure 55 is the display of embodiment three, and the schematic diagram of blue LED device insertion location hole is made in manufacturing method；
Figure 56 is the display of embodiment three, and the schematic diagram of red LED device insertion location hole is made in manufacturing method；
Figure 57 is the display of embodiment three, and the schematic diagram of green LED devices insertion location hole is made in manufacturing method；
Figure 58 is the sub-pixel diagrammatic cross-section of the display of embodiment three.
Specific implementation mode
Embodiment one
Embodiment one provides the manufacturing method of light-emitting diode display 100, and as shown in Figure 1, 2, display 100 is the monochrome of passive matrix
Light-emitting diode display, with 1.61 inches of pixel region, resolution ratio is 40 × 32.The main body of display 100 is LED array
101 comprising the pitch of 40 × 32 LED components 10 by square matrices arrangement, LED component 10 is 0.8mm.LED array
101 are driven by cross one another row electrode 102 and row electrode 103, and each pixel has cross-section structure shown in Fig. 3.
As shown in figure 4, LED component 10 is the vertical structure round LED device of gaN series blue light, format diameter is
0.3mm, film layer be followed successively by from inside to outside the first bonded layer 11, soft magnetic metal layer (the first magnetic portion) 12, without magnetic metal layer 13,
First electrode 14 and semiconductor layer 15.Wherein, the first bonded layer 11 is the tin metal layer of 5 μ m-thicks, and soft magnetic metal layer 12 is 40 μm
Thick layer of iron-nickel alloy, no magnetic metal layer 13 are the copper metal layer of 40 μ m-thicks, the nickel film that first electrode 14 is 100nm thickness；Half
4 μm of the overall thickness of conductor layer 15 comprising N-type layer (n-GaN) 151, multiple quantum wells (MQWs) 152 and as LED component second
The P-type layer (p-GaN) 153 of electrode.
LED component 10 suspends, is dispersed in DI water and forms dispersion liquid, and manufacturing method is as follows：
(1), as shown in figure 5, using MOCVD (Metal Organic Chemical Vapor Deposition method) in sapphire substrates 16 successively
Epitaxial growth N-type layer 151, multiple quantum well layer 152 and P-type layer 153 form semiconductor layer 15, using magnetron sputtering in P-type layer
Nickel film is deposited, first electrode 14 is formed；
(2), as shown in fig. 6, being coated with the photosensitive resin coating 17 of 100 μ m-thicks in first electrode 14 using slot coated method, and
It is patterned using yellow light method (including the processing steps such as precuring, mask exposure, development, post bake), forms serial diameter
The circular hole 171 of 0.3mm, wherein first electrode 14 is exposed in the bottom of circular hole 171, and the spacing of circular hole 171 is 40 μm；
(3), as shown in fig. 7, using first electrode 14 as cathode, the plated copper layer 13 in circular hole 171 controls electroplating current
With the time so that the thickness of copper metal layer 13 is 40 μm；Continue, using first electrode 14 as cathode, to be further electroplated in circular hole
Layer of iron-nickel alloy 12, controls electroplating current and the time so that the thickness of layer of iron-nickel alloy 12 is 40 μm；Continue with first electrode 14
As cathode, tin metal layer 11 is further electroplated in circular hole, controls electroplating current and the time makes the thickness of tin metal layer 11
It is 5 μm；
(4), it as shown in figure 8, impregnating and rinsing out photosensitive resin coating 17 using film liquid is taken off, leaves by copper metal layer 13, iron nickel
The serial boss 111 that alloy-layer 12 and tin metal layer 11 are formed by stacking (height is about 85 μ)；
(5), as shown in figure 9, pasting stripping gummed paper 18 on the face that boss 111 is constituted, stripping gummed paper 18 includes PET plastic
Film 181 and 10 μ m-thick viscosity reduction glue-lines 182, viscosity reduction glue-line 182 can irradiating ultraviolet light viscosity reduction, due to the protrusion of boss 111, viscosity reduction glue
Layer 182 can only be bonded to the top of boss 111；KrF exciamer laser UVs 161 are irradiated from the bottom side of sapphire substrates 16,
It penetrates sapphire substrates 16 and is absorbed by the bottom of semiconductor layer 15 so that thermal decomposition (reaction equation occurs for 15 bottom of semiconductor layer：
2GaN=2Ga+N2), so that semiconductor layer 15 is detached with sapphire substrates 16, and under the support of boss 111,111 bottom of boss
The semiconductor layer 15 in portion keeps that complete (semiconductor layer 15 that no boss 111 supports is most of to be crushed, and small part is bonded in
The edge of LED component can be also crushed in subsequent handling), with boss 111 together with stripping gummed paper 18 from sapphire substrates
It strips down to form LED component 10 on 16, washing its 15 bottom of semiconductor layer using dilute hydrochloric acid decomposes remaining Ga metals；
(6), gummed paper 18 as shown in Figure 10, is removed from back side illuminaton using ultraviolet light 183 (ultraviolet high-pressure mercury-vapor lamp) and makes viscosity reduction
The viscous force of glue-line 182 reduces, and is rinsed LED component 10 with DI water 19, forms the DI aqueous dispersions 191 of LED component 10, uses
Excessive DI water rinses out the break flour of semiconductor layer, filter extra DI water, obtain tamped density be (500 1000) it is a/ml
LED component dispersion liquid.The suspension of LED component 10 can be kept by the flowing of DI water.
As shown in Figure 11,12, use 304 stainless steel plates of thickness 2mm, size 370mm × 470mm as motherboard 20, in mother
Multiple cellular zones 22 for meeting display sizes are defined on first plate body face 21 of plate 20, each cellular zone includes to meet display
The pixel region 23 of 100 display area of device goes out multiple corresponding with 100 each pixel center of display defined in each pixel region 23
Bonding position 24 400 μm of diameter is carved out on bonding position using laser 251, the round of depth 0.5mm is held as shown in figure 13
It receives hole 25, the miniature neodium magnet 26 of 400 μm of diameter, high 0.52mm is embedded into each receiving hole 25, series the is consequently formed
Two magnetic portions.First plate body face 21 is mechanically polished and (throws flat in the top for mainly protruding neodium magnet), then in the first plate
The coating 27 of one layer of fluoropolymer is sprayed in dignity 21, and plate body surface shown in Figure 14 is formed after the solidification of coating 27.
As shown in figure 15, polyamic acid solution is coated on the first plate body face 21 using slot coated method, heat is dried to polymerize
The Kapton 31 that the thickness of layer is 50 μm for based on is used as shown in Figure 16, Fig. 1, Fig. 2 on basal layer 31
Mo-Al-Mo metallic film 321 (i.e. " molybdenum niobium-aluminium neodymium-molybdenum of the magnetron sputtering deposition as bottom electrode layer (drive circuit layer)
Niobium " three-layer alloy film or other metallic films with good conductivity) and use photoetching process (including photoresist coating, light
Photoresist precuring takes off the processing steps such as film to photoresist progress mask exposure, photoresist developing, metallic film etching, photoresist)
32 row electrodes 32 are patterned into, the width of row electrode 32 is 500 μm, spacing is 300 μm, and it is (same to be connected to the first pin 322
Sample is graphically formed by bottom electrode layer).As shown in figure 17, by motherboard 20 immerse copper electroplating bath in, using row electrode 32 as
Cathode (each row electrode is temporarily interconnected amongst themselves so that connection when plating, is just cut off when finally cross cutting is display unit),
It is further expert at and the copper metal layer 323 of one layer of 5 μ m-thick is electroplated on electrode.
As shown in figure 18, the 100 μ m-thick polyimide coatings as alignment layers are further printed on the first plate body face 21
33, alignment layers 33 are carved using laser, control the power and carving speed of laser, multiple diameters are formed on bonding position
350 μm of the exposed trip electrode 32 of location hole 331 and its bottom, is consequently formed the pad 324 for welding LED component.Such as figure
Shown in 19, motherboard 20 is immersed in the electroplating bath of metallic tin, using row electrode 32 as cathode, one layer of work is electroplated on pad 324
For the tin metal layer 325 of 30 μm of the thickness of the second bonded layer.
As shown in figure 20, motherboard 20 is placed in scan-type magnet charger 261, the magnetic field 262 of magnet charger 261 is made vertically to penetrate
Motherboard 20 and magnetize to the second magnetic portion 26.
As shown in figure 21, motherboard 20 is fixed on shake table (nothing marks on figure), shake table provides frequency for motherboard and is
The oscillation crosswise 411 (along motherboard face) of 20 200Hz and extensional vibration 412 (vertical motherboard face), by LED component dispersion liquid 191
Spray on the first plate body face, the first magnetic portion 12 of LED component 10 by the second magnetic portion 26 magnetic fields, with the first key
Closing layer 11, (fluid resistance and magnetic attraction collective effect can cause LED component 10 to tend to keep the appearance towards the posture of motherboard 20
State) it is attracted on location hole 331 and is embedded in location hole 331 and the first and second bonded layer 11,325 is kept mutually to be adjacent to.Shake table
Oscillation crosswise 411 LED component 10 can be made to be moved horizontally on the first plate body face 21 and fallen into location hole 331, thus improve
The efficiency of 10 adsorption process of LED component；The extensional vibration 412 of souring and shake table when dispersion liquid 191 sprays can then rush
It washes, the LED component for falling that absorption is bad, position is bad of shaking.As shown in figure 22, the motherboard 20 after absorption is completed passes through upside band
The gate 42 for having magnet 421, further to fall to adsorb bad or bad position LED component (gate 42 by the absorption of magnet 421
It is height-adjustable, also adsorb to avoid the LED component held).Repeatable above-mentioned steps so that LED component 10 fully
It is embedded into location hole 331 to form LED array shown in Figure 23.
Remaining LED component dispersion liquid on motherboard is blown off using air knife, as shown in figure 24, motherboard is made to pass through 300 DEG C of time
Flow stove so that be all tin metal layer the first and second bonded layer 11,325 melt and mutually infiltration form bonded layer 43.It is each as a result,
A LED component 10 is welded on pad 324, and the row electrode 32 of first electrode 14 and drive circuit layer forms bottom electrode and connects
It connects.
As shown in figure 25, it is further coated with as the 20 photosensitive trees of μ m-thick negativity black for filling up layer on the first plate body face 21
Lipid layer 44, penetrates into and (vacuum-pumping removes the gas within gap the gap filled up between LED component 10 and location hole 331
Bubble), it is patterned using yellow light technique to filling up layer 44, exposes opening for second electrode 153 to be formed at 10 top of LED component
Mouth (exposing mouth) 441.As shown in figure 26, one layer is further deposited on motherboard as top electrode layer using magnetron sputtering
Indium tin oxide films 45 are patterned into 40 row electrodes 451 by indium tin oxide films 45 using photoetching process, row electrode 451 with
Periphery equally by indium tin oxide films 45 it is graphical made of second pin 452 connect (with reference to figure 1, Fig. 2).
So far, making of the LED array device 101 on motherboard 20 is completed.As shown in figure 28, in LED array device 101
Upper to attach one layer of stripping gummed paper 47, stripping gummed paper 47 includes PET plastic film 471 and ultraviolet viscosity reduction glue 472, as shown in figure 29,
It removes and tears off from motherboard 20 by LED array device 101 under the auxiliary of gummed paper 47, and each show is cut into using cutting die
Show device unit.As shown in figure 29, the removal of irradiating ultraviolet light 473 stripping gummed paper 47, you can obtain flexible LED display 100；Or
Person, LED array device 101 can be also attached to rigid support plate 104, and (such as aluminium sheet, stainless steel plate, glass plate, plastic plate are hard
Scutum body can be straight or arc shape) on, then irradiating ultraviolet light removal stripping gummed paper, it is secured to support plate
On hard light-emitting diode display 100.
In other schemes of the present embodiment, soft magnetic metal layer 12 can also be changed to the coating of pure iron or silicon steel, and second is magnetic
Portion 26 can also be changed to Al-Ni-Co series permanent-magnet alloy, siderochrome cobalt system permanent-magnet alloy, permanent-magnet ferrite, other rare earth permanent-magnetic materials or
The compound retentive material that above-mentioned material is constituted.In other schemes of the present invention, fluorescent coating 46 can be saved to obtain
The light-emitting diode display of blue, LED component 10 can also be changed to LED component (epitaxial substrate and half of other luminescent colors such as GaP, GaAs
The proportioning of conductor layer need to make corresponding change, can refer to the prior art of emitting semiconductor industry), to obtain other colors
Light-emitting diode display.
In other schemes of the present embodiment, the first and second bonded layer 11, one of 325 can also be changed to the coating of gold
(such as electroplated layer or vacuum-coating), the tin metal layer after golden coating and fusing also have good wellability and are easy to be formed
Welding.First and second bonded layer 11,325 can also all be changed to the coating of gold, and make the by the way of the pressure weldings such as ultrasonic bonding
One, two bonded layers weld.In addition to this, at least the first and second bonded layer 11, one of 325 can also be changed to nano silver
Or the coating of nanogold, weld the first and second bonded layer 11,325 by the way of the pressure welding that heats up.
In other schemes of the present embodiment, motherboard 20 can also be changed to glass plate, quartz glass plate, sapphire substrate or
It is ceramic wafer or other non-magnetic metallic plates.Laser engraving or mask etch (such as motherboard 20 may be used in its receiving hole 25
In the case of for glass plate or quartz glass plate, photomask etching is carried out using ammonium acid fluoride) etc. modes formed.
In other schemes of the present embodiment, alignment layers 33 are also changed to the better organic silicon coating of flexibility or cost more
Low high temperature resistant ink printed layer.In addition to this, alignment layers 33 can also be changed to be made by photosensitive resin coating, location hole
331, which can be used yellow light technique, forms with more accurate shape.
As shown in figure 30, in other schemes of the present embodiment, top electrode layer 45 can also be changed to the metals such as Mo-Al-Mo
Or the film of alloy, plated film can be carried out by the methods of magnetron sputtering and is patterned into row electrode 451, and row electrode 451 is in LED
The top of device 10 is provided with light hole 452, and the edge of light hole 452 contacts formation with the second electrode 153 at 10 top of LED component
Top electrodes connect.When top electrode layer 45 is made using metallic diaphragm, layer 44 is filled up without the photosensitive tree of black
Lipid layer.In order to achieve the purpose that reduce reflected light, one layer of black ink layer (nothing can be further covered on top electrode layer
Draw), black ink layer can in LED top drillings appearing in order to LED component light, black ink layer can also be it is semi-transparent simultaneously
The ink layer of display surface is completely covered, is conducive to be further reduced display reflection.
In other schemes of the present embodiment, powder is made after can also drying LED component 10, LED component is disperseed
The step of liquid is sprayed is changed to the step of LED powder is spread and (can be driven by air-flow), can equally make LED component
10 are transferred on pad 324, wherein the mode of air knife air blowing can be used to dispose the LED component 10 of absorption loosely.
As shown in figure 31, in other schemes of the present embodiment, LED component 10 is stripped down from sapphire substrates 16
In the process, magnet 18' also can be used to replace stripping gummed paper 18.Specifically, magnet 18' can be posted in sapphire substrates 16
Positive side, sapphire substrates 16 bottom side irradiation ultraviolet laser 161 so that 15 bottom of semiconductor layer is thermally decomposed, as a result, by
In the disappearance (or decrease) of 15 bottom binding force of semiconductor layer, LED component 10 will be between the first magnetic portion 12 and magnet 18'
It is adsorbed under magneticaction on magnet 18' and realizes stripping.It can directly use DI water or other fluids by LED component 10 from magnetic
It is rinsed on iron 18', or LED component 10 is scraped from magnet using other mechanical means and smears；Magnet 18' can also
For electromagnet, thus LED component can be made to be detached with magnet by way of magnetic field of decorporating；It in addition to this, can also be on magnet 18'
Attach one layer of pad film 181', thus LED component 10 is adsorbed in pad film, finally removes magnet 18' so that LED component 10 from
It is split away off on pad film 181'.
Embodiment two
As shown in Figure 32-34, what embodiment two to be made is the color LED displays 200 of a driven with active matrix,
With 26 inches of pixel region, resolution ratio is 1920 × 1080, and each pixel 201 still further comprises red (R), green (G), indigo plant
(B), the sub-pixel 202 of white (W) four primaries.The main body of display 200 is a LED array 203 comprising 1920 × 1080 × 4
The pitch of 829.44 ten thousand LED components 10 by square matrices arrangement altogether, LED component 10 is 150 μm.
The LED component 10 of embodiment two and embodiment one are essentially identical (with reference to figure 4), the difference is that embodiment two
The thickness of a diameter of 100 μm of LED component, soft magnetic metal layer and copper metal layer is 20 μm, and the first bonded layer is changed to thickness 3
μm indium metal layer.LED component be suspended in DI water formed tamped density be (1,000 2000) it is a/dispersion liquid of ml, system
It is also identical as embodiment one (the first bonded layer need to be changed to indium plating) to make method.
Motherboard is thickness 0.5mm, the titanium mesh of size 640mm × 400mm (is resistant to 1500 DEG C or more of high temperature, removes this
Except, motherboard is alternatively tungsten, molybdenum alloy plate or zirconia ceramics plate), it defines and shows on the first plate body face of motherboard
The corresponding cellular zone of device and pixel region, go out and the sub-pixel of display 202 is corresponding is bonded position defined in pixel region, such as
Shown in Figure 35, carved out as the circular through hole 25 for accommodating 100 μm of bore dia, such as Figure 36 on bonding position 202 using laser 251
It is shown, the lotion 261 that neodymium iron boron powder (particle scale is 15 μm) is made is scraped into coated first plate body face 21 and it is applied
Pressure makes lotion 261 squeeze each receiving hole 25 thoroughly, motherboard 20 is placed in 110 DEG C of baking oven and removes moisture, and motherboard is disposed in polishing
The remaining lotion in 20 two sides, motherboard 20 is placed in 1000 DEG C of pressurized sintering furnace and carries out pressure sintering so that in receiving hole 25
Powder sintered ndfeb magnet 26 of the formation as the second magnetic portion of neodymium iron boron.Two plate body faces of motherboard 20 are thrown
Then light sprays the coating 27 of one layer of fluoropolymer on the first plate body face 21, the first plate body as shown in figure 37 is consequently formed
Face.
As shown in Figure 38,39, polyamic acid solution is coated on the first plate body face 21 using slot coated method, heat dries polymerization
The polyimide film 31 of 10 μm of the thickness of layer for based on, work is sequentially depositing on polyimide film 31 using PECVD methods
For the silicon nitride (SiN of buffer layer 32x) and silica (SiO2) film, and further use the array manufacturing process of LTPS (such as
Nine photoetching top-gated techniques, or the prior art with reference to flexibility AM-OLED) drive circuit layer 33 is formed on buffer layer 32.
As shown in Figure 40-42, the main body of drive circuit layer 33 is that (in X direction, each pixel corresponds to two by scan line 331
Scan line, totally 2160), data line 332 (along Y-direction, each pixel corresponds to two data lines, totally 3840) and power cord
333 (side by side with data line) intersect made of array (further include peripheral circuit, herein without be described in detail), wherein scan line 331
Pitch with data line 332 is 150 μm.One crosspoint of 202 corresponding array of each sub-pixel, circuit include mainly：
The 334, second thin film transistor (TFT) of first film transistor (T1) (T2) 335 and capacitance C 336.The grid of T1, source electrode respectively with
Scan line 331, data line 332 connect, and drain electrode is connect with the grid of one end of capacitance C and T2, the other end and T2 of capacitance C
Source electrode connect with power cord 333, the drain electrode of T2 is connect with pad 339, and T1 can be by the line scan signals of scan line 331 as a result,
Control is kept the grid electricity of T2 within a frame the voltage signal of corresponding data line 332 to be written in capacitance C by capacitance C
Thus pressure further controls the light emission luminance of LED component corresponding to sub-pixel 202 to control the channel current of T2.In driving electricity
In road floor 33, pad 339 is connect by the via 338 on planarization layer 337 with the drain electrode of T2, and pad 339 is sunk by magnetron sputtering
Long-pending Mo-Al-Mo thin film photolithographies form.
As shown in figure 43, further use slot coated method coating as 80 μ m-thicks of alignment layers in drive circuit layer 33
Photosensitive resin coating 34 forms the positioning round orifice 341 of 110 μm of multiple diameters, positioning round orifice 341 and each weldering using yellow light technique
Disk 339 is corresponding to expose pad 339 in its bottom.
As shown in figure 44, galvanoplastic are further used, one layer of thickness as the second bonded layer is electroplated on pad 339
30 μm of indium metal layer 35.In plating, positive voltage can be applied on the scan line 331 of drive circuit layer 33, data line 332,
And apply negative voltage on power cord 333, it is cathode thus to make pad 339.It is formed after indium metal layer 35, drive circuit layer
Dot structure is as shown in figure 45.
The subsequent job step of display 200 includes mainly：
(1), it as shown in figure 46, magnetizes to the second magnetic portion 26；(2), as shown in figure 47, LED component dispersion liquid 191 is sprayed
Leaching is on the first plate body face 21 so that LED component 10 is embedded into location hole under the magnetic fields of the first and second magnetic portion 12,26
In 341 and the first and second bonded layer 11,35 is kept mutually to be adjacent to；(3), as shown in figure 48, occur the first and second bonded layer 11,35
Welding；(4), as shown in figure 49, further layer 44 is filled up in setting on the first plate body face 21, and filling up layer 44 and being patterned into have makes
The trepanning 441 that the second electrode 153 of LED component is exposed；(5), as shown in figure 50, top electrode layer 45 is set；(6), such as Figure 51
It is shown, colorization layer 46 is set on top electrode layer 45；(7), as shown in Figure 52,53, using stripping gummed paper 47 and ultraviolet light
471 strip down display 200 from motherboard 20.Above-mentioned steps (1) (4) and (7) can be used identical with embodiment one
Process.In step (5), transparent conductive film identical with embodiment one or graphical gold can also be used in top electrode layer 45
Belong to film, except that it is not required to be patterned into row electrode.In step (6), one layer is arranged on top electrode layer 45
It is multiple right with the top of LED component 10 that the black photosensitive resin coating 461 and use yellow light technique figure that thickness is 10 μm dissolve
The circular hole 462 (100 μm of diameter) answered inserts feux rouges in the R, G, W sub-pixel of each pixel respectively using inkjet printing methods
Quantum dot coating 4631, green light quantum point coating 4632 and white fluorescence powder coating 4633 are simultaneously dry, and B sub-pixels are not required to filling and apply
Material, so that display colorization.
In other schemes of the present embodiment, the TFT circuit design further improved also can be used in drive circuit layer 33, such as band
The TFT circuit for having Compensation Design specifically refers to the existing pixel circuit designs of AM-OLED.The LTPS- of drive circuit layer 33
TFT devices can also be changed to IGZO-TFT devices, and with reference to the array substrate manufacturing process of existing IGZO-TFT.
In other schemes of the present embodiment, red light quantum point coating 4631, green light quantum point coating 4632 can be replaced respectively
For red light fluorescent powder coating 4631' and green-emitting fluorescent powder coating 4632'.
Embodiment three
As shown in figure 54, the display 300 and embodiment two that embodiment three to be made are essentially identical, the difference is that it is every
A pixel 301 includes each red sub-pixel (R sub-pixels) 3021, blue subpixels 3022 (B sub-pixels) and two greens
Sub-pixel 3023 (G sub-pixel).In order to save the setting steps of colorization layer, embodiment three uses the LED devices of three kinds of colors
Part, is respectively red LED 101 (GaAs LED), blue led 102 (GaN LED) and green LED 103 (GaP LED),
The diameter of three kinds of LED components is respectively 100 μm, 162 μm and 50 μm, structure and manufacturing step (used epitaxial substrate, work
Skill parameter may be different) it is identical as LED component used by embodiment two, it is made as DI aqueous dispersions 1911,1912 and respectively
1913。
The design and making step and embodiment two of the motherboard, basal layer and drive circuit layer of embodiment three are essentially identical.
The difference is that in alignment layers 34, positioning round orifice is divided into first that diameter is respectively 110 μm, 180 μm and 55 μm three kinds of specifications
Location hole 3411, second location hole 3412 and third location hole 3413 (pad also needs cooperation to change), correspond to R sub-pixels respectively
3021, B sub-pixels 3022 and G sub-pixel 3023.
300 subsequent procedure of processing of display and embodiment two are essentially identical.The difference is that without being arranged in display
Upper setting colorization layer, and the process for making LED component be embedded in location hole includes：
(1), method identical with embodiment one or two as shown in figure 55, is first used, by the spray of blue led dispersion liquid 1912 the
On one plate body face 21 so that blue LED device 102 is embedded into the second positioning under the magnetic fields of the first and second magnetic portion 12,26
In hole 3412 and the first and second bonded layer 11,35 is kept mutually to be adjacent to, due to size, blue LED device 102 can not be embedding
Enter into the first and third location hole 3411,3413；
(2), as shown in figure 56, red LED dispersion liquid 1911 is sprayed on the first plate body face 21 using same method so that
Red LED device 101 is embedded into first positioning hole 3411 under the magnetic fields of the first and second magnetic portion 12,26 and keeps
One, two bonded layers 11,35 are mutually adjacent to, and since second location hole 3412 has been occupied full, and third location hole 3413 is too small, red
LED component 101 can not be embedded into second and third location hole 3412,3413；
(3), as shown in figure 57, green LED dispersion liquid 1913 is sprayed on the first plate body face 21 using same method so that
Green LED devices 103 are embedded into third location hole 3413 under the magnetic fields of the first and second magnetic portion 12,26 and keep
One, two bonded layers mutual 11,35 are adjacent to, and since the first and second location hole 3411,3412 has been occupied full, can not also be embedded into
One, in two location holes 3411,3412.
Through the above steps, it can be achieved that the LED component 101,102,103 of three kinds of different colours is embedded into corresponding
It in location hole, and is adjacent to corresponding pad, ultimately forms color display device 300 shown in Figure 58.
Furthermore, it is necessary to illustrate, the specific embodiment described in this specification, each section title etc. can not
Together, the equivalent or simple change that all structure, feature and principles according to described in inventional idea of the present invention are done, is included in the present invention
In the protection domain of patent.Those skilled in the art can do described specific embodiment various each
The modify or supplement or adopt similar mode of sample substitutes, and without departing from structure of the invention or surmounts the claims
Defined range, is within the scope of protection of the invention.
Claims (42)
1. a kind of manufacturing method of LED array device, it is characterized in that：
The LED component of multiple vertical structures is provided, the inner side and outer side of the LED component is respectively provided with first electrode and the second electricity
Pole, the first electrode are equipped with the first magnetic portion for being made of soft magnetic metal, and the surface of first magnetic portion is equipped with the
One bonded layer；
A motherboard is provided, the lateral surface of the motherboard is the first plate body face, and being defined on first plate body face has forming array
Multiple bonding positions, the bonding position are equipped with the second magnetic portion being made of retentive material；And it is walked using following processing
Suddenly：
Step 1: the basal layer of nonmagnetic insulation is arranged on first plate body face；
Step 2: drive circuit layer is arranged on the basal layer, the drive circuit layer includes multiple pads and is connected to
The driving circuit of the pad, the pad are on the bonding position of motherboard, and at least its surface is set as the second bonded layer；
Step 3: the LED component is spread in drive circuit layer, the first magnetic portion by the second magnetic portion pad it
The active force in upper magnetic field and so that LED component is positioningly adsorbed onto on pad and first bonded layer and the second bonded layer made to paste
Tightly；
Step 4: the first bonded layer and the second bonded layer is made to be bonded, the thus first electrode structure of the pad and LED component
At electrical connection；
Step 5: the basal layer is made to be separated from each other with motherboard, LED array device is obtained.
2. the manufacturing method of LED array device as described in claim 1, it is characterized in that：First magnetic portion be by iron,
The soft magnetic metal layer that nickel, manganese Metal or its alloy are constituted.
3. the manufacturing method of LED array device as described in claim 1, it is characterized in that：The thickness of first magnetic portion is
1〜200μm。
4. the manufacturing method of LED array device as described in claim 1, it is characterized in that：First magnetic portion is in LED partially
Position on the inside of device.
5. the manufacturing method of LED array device as claimed in claim 4, it is characterized in that：The first magnetic portion thickness does not surpass
Cross the 1/2 of LED component integral thickness.
6. the manufacturing method of LED array device as claimed in claim 4, it is characterized in that：First magnetic portion and the first electricity
Also pad is equipped with no magnetic metal layer between pole.
7. the manufacturing method of LED array device as claimed in claim 4, it is characterized in that：The thickness of first bonded layer is not
More than the 1/2 of the first magnetic portion thickness.
8. the manufacturing method of LED array device as described in claim 1, it is characterized in that：First bonded layer is low melting point
Metal layer.
9. the manufacturing method of LED array device as described in claim 1, it is characterized in that：The motherboard is non-magnetic metal
Plate.
10. the manufacturing method of LED array device as described in claim 1, it is characterized in that：Second magnetic portion is alnico
It is the compound hard magnetic that permanent-magnet alloy, siderochrome cobalt system permanent-magnet alloy, permanent-magnet ferrite, rare earth permanent-magnetic material or above-mentioned material are constituted
Material.
11. the manufacturing method of LED array device as described in claim 1, it is characterized in that：Second magnetic portion is by neodymium iron boron
Alloy is constituted.
12. the manufacturing method of LED array device as described in claim 1, it is characterized in that：The bonding position of the motherboard, which is equipped with, to hold
Receive hole, second magnetic portion is embedded within receiving hole.
13. the manufacturing method of LED array device as claimed in claim 12, it is characterized in that：The receiving hole is carved by laser
It carves, the process that mask etch or mask are electrolysed is formed on the first plate body face of motherboard.
14. the manufacturing method of LED array device as claimed in claim 12, it is characterized in that：It is filled in the receiving hole of motherboard
The powder of retentive material carries out high-temperature process so that powder sintered retentive material within receiving hole is second to motherboard
Magnetic portion.
15. the manufacturing method of LED array device as claimed in claim 14, it is characterized in that：The receiving hole is through-hole.
16. the manufacturing method of LED array device as claimed in claim 14, it is characterized in that：The motherboard is more than by fusing point
1500 DEG C of nonmagnetic metal or alloy is made.
17. the manufacturing method of LED array device as claimed in claim 12, it is characterized in that：The second magnetic is set up on motherboard
Property portion after the first plate body face of motherboard is processed by shot blasting and viscosity reduction processing.
18. the manufacturing method of LED array device as described in claim 1, it is characterized in that：Further include to second magnetic portion
It magnetizes.
19. the manufacturing method of LED array device as claimed in claim 18, it is characterized in that：In the step 2 and step 3
Between magnetize to the second magnetic portion.
20. the manufacturing method of LED array device as described in claim 1, it is characterized in that：The basal layer is insulation, without magnetic
Property and with tensile resistance organic film.
21. the manufacturing method of LED array device as claimed in claim 20, it is characterized in that：The basal layer is polyimides
Film.
22. the manufacturing method of LED array device as described in claim 1, it is characterized in that：In the drive circuit layer, institute
The pitch for stating pad is 1.2 5.0 times of LED component size.
23. the manufacturing method of LED array device as described in claim 1, it is characterized in that：Second bonded layer is low melting point
Metal layer.
24. the manufacturing method of LED array device as described in claim 1, it is characterized in that：It is additionally provided in the drive circuit layer
Alignment layers, the alignment layers are made by insulating materials, and thickness is 0.6 2.0 times of the LED component height, described
Alignment layers include and are bonded the corresponding location hole in position.
25. the manufacturing method of LED array device as claimed in claim 24, it is characterized in that：The size of the location hole is institute
State LED component size 1.1 1.5 times.
26. the manufacturing method of LED array device as claimed in claim 24, it is characterized in that：The alignment layers are photosensitive resin
Coating, the location hole are made using yellow light technique.
27. the manufacturing method of LED array device as claimed in claim 24, it is characterized in that：The alignment layers apply for organosilicon
Layer, polyimide coating or oil resistant layer of ink, the location hole is by laser engraving technique, mask etch technique or micro-nano pressure
Print technique is formed.
28. the manufacturing method of LED array device as claimed in claim 24, it is characterized in that：The location hole is circle, described
LED component has circular profile.
29. the manufacturing method of LED array device as claimed in claim 24, it is characterized in that：
The LED component includes at least the first LED component, the second LED component and the third LED component that size is successively decreased successively, the
One LED component, the second LED component and third LED component have different luminescent colors；
The location hole includes at least first positioning hole, second location hole and the third location hole that size is successively decreased successively, and first is fixed
The size in position hole, second location hole and third location hole is respectively first LED component, the second LED component and the 3rd LED devices
1.1 1.5 times of part；And
In step 3, the first LED component, the second LED component and third LED component are spread into the drive circuit layer successively
On so that the first LED component, the second LED component and third LED component are sequentially embedded to the first trepanning, the second trepanning and third
In trepanning.
30. the manufacturing method of LED array device as claimed in claim 29, it is characterized in that：First, second and third LED component
The adjacent ratio of size is 1.6 2.0.
31. the manufacturing method of LED array device as described in claim 1, it is characterized in that：In the step 3, first by LED
Device is distributed to the dispersion liquid that LED component is formed in liquid, then the dispersion liquid is made to be contacted with drive circuit layer, thus makes dispersion
LED component in liquid is adsorbed on the pad.
32. the manufacturing method of LED array device as described in claim 1, it is characterized in that：In the step 3, it is additionally provided with
Purge mechanism to adsorbing bad or bad position LED component to be purged.
33. the manufacturing method of LED array device as claimed in claim 32, it is characterized in that：The purge mechanism is using liquid
Body or gas are rinsed the surface of drive circuit layer.
34. the manufacturing method of LED array device as claimed in claim 32, it is characterized in that：The purge mechanism is described
Apply mechanical oscillation on motherboard, the LED component for adsorbing bad or bad position is shaken off.
35. the manufacturing method of LED array device as claimed in claim 32, it is characterized in that：The purge mechanism is in motherboard
Lateral surface on apply opposing magnetic field, the LED component for adsorbing bad or bad position is sopped up.
36. the manufacturing method of LED array device as claimed in claim 32, it is characterized in that：The purge mechanism is in motherboard
Lateral surface on apply goo, the LED component for adsorbing bad or bad position is sticked out.
37. the manufacturing method of LED array device as described in claim 1, it is characterized in that：It is also further after step 4
A top conductive layer is covered on the second electrode to be connected with the second electrode for constituting LED component.
38. the manufacturing method of LED array device as claimed in claim 37, it is characterized in that：The top conductive layer is transparent
The nontransparent conductive film that conductive film or part are contacted with the second electrode.
39. the manufacturing method of LED array device as claimed in claim 37, it is characterized in that：It covers and fills out on the alignment layers
Layer is mended, the layer of filling up penetrates into and fills up the gap between LED component and alignment layers；The layer of filling up is cured and schemed
Shape exposes the exposing mouth of LED component second electrode to be formed；And the top conductive is set on mouth filling up layer and exposing
Layer is connected with the second electrode for forming LED component.
40. the manufacturing method of LED array device as claimed in claim 39, it is characterized in that：The layer of filling up is ink layer.
41. the manufacturing method of LED array device as claimed in claim 39, it is characterized in that：The layer of filling up is photosensitive resin
Coating.
42. the manufacturing method of LED array device as claimed in claim 41, it is characterized in that：For black or the photosensitive tree of dark color
Fat coating.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2018104519665 | 2018-05-12 | ||
| CN201810451966 | 2018-05-12 |
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| Publication Number | Publication Date |
|---|---|
| CN108682312A true CN108682312A (en) | 2018-10-19 |
| CN108682312B CN108682312B (en) | 2020-11-06 |
Family
ID=63806124
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810454421.XA Active CN108682312B (en) | 2018-05-12 | 2018-05-14 | Manufacturing method of LED array device |
| CN201810543339.4A Active CN108682725B (en) | 2018-05-12 | 2018-05-31 | LED device with vertical structure and manufacturing method thereof |
| CN201810659269.9A Active CN108847433B (en) | 2018-05-12 | 2018-06-25 | A kind of manufacturing method of vertical structure LED device |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810543339.4A Active CN108682725B (en) | 2018-05-12 | 2018-05-31 | LED device with vertical structure and manufacturing method thereof |
| CN201810659269.9A Active CN108847433B (en) | 2018-05-12 | 2018-06-25 | A kind of manufacturing method of vertical structure LED device |
Country Status (2)
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| WO (1) | WO2019218775A1 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN108682725A (en) | 2018-10-19 |
| CN108682312B (en) | 2020-11-06 |
| CN108847433B (en) | 2019-10-11 |
| WO2019218775A1 (en) | 2019-11-21 |
| CN108682725B (en) | 2020-05-15 |
| CN108847433A (en) | 2018-11-20 |
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