CN108847433B - A kind of manufacturing method of vertical structure LED device - Google Patents

A kind of manufacturing method of vertical structure LED device Download PDF

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Publication number
CN108847433B
CN108847433B CN201810659269.9A CN201810659269A CN108847433B CN 108847433 B CN108847433 B CN 108847433B CN 201810659269 A CN201810659269 A CN 201810659269A CN 108847433 B CN108847433 B CN 108847433B
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led component
magnet
metal layer
magnetic metal
soft magnetic
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CN108847433A (en
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沈奕
吕岳敏
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Shantou Goworld Display Technology Co Ltd
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Shantou Goworld Display Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
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Abstract

A kind of manufacturing method of vertical structure LED device, comprising: Step 1: growing the semiconductor light emitting layer of LED component on epitaxial substrate;Step 2: forming the soft magnetic metal layer with soft magnetism in the outside of semiconductor light emitting layer, at least described soft magnetic metal layer and semiconductor light emitting layer constitute LED component;Step 3: the back side illuminaton ultraviolet laser in epitaxial substrate makes the bottom of semiconductor light emitting layer decompose, magnet is placed in the outside of LED component simultaneously, using the magnetic attraction between magnet and soft magnetic metal layer, LED component is adsorbed from epitaxial substrate, obtains the LED component of vertical structure.The manufacturing method of this vertical structure LED device, LED component are not required in removing using ultraviolet viscosity reduction gummed paper, because the pollution problem of ultraviolet viscosity reduction glue may be not present.

Description

A kind of manufacturing method of vertical structure LED device
Technical field
The present invention relates to a kind of manufacturing methods of vertical structure LED device, belong to the field of light emitting diode manufacturing technology.
Background technique
The electrode (pole P and the pole N) of vertical structure LED device is respectively at the two sides of device, will not tie up shining for device Area, its electric current relatively evenly flows along longitudinal direction when work, thus this LED component have light-emitting area than greatly, brightness it is high, easy The advantages of imperceptibility.In addition to this, the electrode of vertical structure LED device is respectively at the two sides of device, and be made fine (size Within 200 μm) and when being assembled into micro- light-emitting diode display of micro-LED or mini-LED etc, the installation contraposition of device requires low (only needing one electrode of alignment), thus have great importance to the development of micro- LED display technique.
Unlike horizontal structure LED component, the LED component of vertical structure during fabrication, when complete semiconductor light emitting Layer (generally comprising P-type layer, Quantum Well, N-type layer) growth in epitaxial substrate (such as sapphire substrates) and thereon structure are (such as gold Belong to electrode) production, on epitaxial substrate formed LED component after, in order to expose the medial electrode of LED component, need LED component is stripped out from epitaxial substrate.Currently, the method that LED component is stripped out from epitaxial substrate, mainly In the back side illuminaton ultraviolet laser of epitaxial substrate the bottom of semiconductor light emitting layer is decomposed, so that LED component and extension The binding force of substrate reduces, then it is pulled from epitaxial substrate pull-up.
In the prior art, above-mentioned stripping process need to generally be realized by ultraviolet viscosity reduction gummed paper, i.e., first by ultraviolet viscosity reduction Gummed paper is adhered to the outside of made LED component, after laser is irradiated in its bottom, by ultraviolet viscosity reduction gummed paper by LED component It glues to pull from epitaxial substrate and, finally the just irradiating ultraviolet light on ultraviolet viscosity reduction gummed paper, so that the viscous force of ultraviolet viscosity reduction gummed paper It is reduced so that LED component is detached from ultraviolet viscosity reduction gummed paper.However, in this approach, the glue-line on ultraviolet viscosity reduction gummed paper may Remain in the outside of LED component and be contaminated it, when the LED component being contaminated is assembled into micro- light-emitting diode display, can lead The failure of respective pixel in micro- light-emitting diode display is caused, and then the entirety of micro- light-emitting diode display is caused to be scrapped.
Summary of the invention
It is an object of the present invention to provide a kind of manufacturing method of vertical structure LED device, LED component is not required in removing Using ultraviolet viscosity reduction gummed paper, because the pollution problem of ultraviolet viscosity reduction glue may be not present.Used technical solution is as follows:
A kind of manufacturing method of vertical structure LED device, it is characterized in that, comprising:
Step 1: growing the semiconductor light emitting layer of LED component on epitaxial substrate;
Step 2: the soft magnetic metal layer with soft magnetism is formed in the outside of semiconductor light emitting layer, at least described soft magnetism gold Belong to layer and semiconductor light emitting layer constitutes LED component;
Step 3: the back side illuminaton ultraviolet laser in epitaxial substrate makes the bottom of semiconductor light emitting layer decompose, together When in the outside of LED component place magnet, using the magnetic attraction between magnet and soft magnetic metal layer, by LED component from epitaxial base It is adsorbed on bottom, obtains the LED component of vertical structure.
The LED component is specifically as follows the inorganic semiconductor LED of the various emission wavelengths of the series such as GaP, GaAs, GaN Device, semiconductor light emitting layer generally comprise P-type layer (such as p-GaN), Quantum Well (such as InGaN/GaN) and N-type layer (such as n- GaN), in addition to this, it may also include heavily doped P-type layer, heavily doped N-type layer etc. and (partly led for improving the film layer of LED component performance The more detailed film layer structure of body luminescent layer and stoicheiometry can refer to the prior art of LED manufacturing, not be unfolded to carry out herein Introduce), in said step 1, it is above-mentioned that the methods of MOCVD epitaxial growth on epitaxial substrate (such as sapphire) generally can be used Semiconductor light emitting layer.It preferably, can also be in one layer of the outer side covering metallic diaphragm as first electrode of semiconductor light emitting layer, such as Ni, Ti metallic film being covered in P-type layer, in order to improve soft magnetic metal layer made by semiconductor light emitting layer and step 2 Contact.In addition to this, the outside of semiconductor light emitting layer can also cover one layer thicker without magnetic metal layer, for adjusting institute Film layer position of the soft magnetic metal layer in entire LED component is stated, so that thicknesses of layers of the soft magnetic metal layer in entire LED component More rationally (thickness of such as soft magnetic metal layer is no more than the half of LED component integral thickness and in eccentric position with position Set), the no magnetic metal layer can be made of the metal or alloy of gold, silver, copper, aluminium etc. nonmagnetic (relative permeability < 10) Film layer can be arranged by the methods of vapor deposition, magnetron sputtering, plating, spraying plating on first electrode.
The soft magnetic metal layer is the film layer of soft magnetic metal, it is ensured that its is conductive in order to constituting on the outside of LED Conductive electrode, soft magnetic metal is to have the metal of low-coercivity and high magnetic permeability (relative permeability > 100), general to locate In demagnetized state without magnetic field, it is also ensured that will not attract each other when each LED component is got along and cause to reunite.Specifically, institute Stating soft magnetic metal layer can be the soft magnetism gold being made of the magnetic metals such as iron, nickel, manganese (such as pure iron) and its alloy (such as silicon steel) Belong to layer, can be made by the methods of vapor deposition, magnetron sputtering, spraying plating, plating.In order to guarantee that magnet has soft magnetic metal layer There are enough magnetic attractions, and can be used in supporting semiconductor light emitting layer in step 3, avoids half that soft magnetic metal is covered Conductor luminescent layer it is broken, the preferably described soft magnetic metal layer with a thickness of 10 200 μm;In order to realize 10 200 μm of thickness Soft magnetic metal layer, the further preferred soft magnetic metal layer are made using electro-plating method, specifically, can be by above-mentioned extension Piece is immersed in the electroplate liquid of soft magnetic metal layer, such as the electroplate liquid of iron, nickel, manganese magnetic metal, and most by semiconductor light emitting layer The film layer (such as P-type layer) or first electrode in outside grow the soft magnetic metal layer, using the side of plating as cathode on it Method grows soft magnetic metal layer, and the speed of growth is fast, is easy to reach 10 200 μm of thickness.In order to improve the key of the LED component Performance is closed, bonded layer may further be provided on the soft magnetic metal layer, the bonded layer can be low-melting-point metal layer (as such as Indium, tin metal layer) or soft metal layer (such as gold, silver metal layer), its general thickness is no more than the half of soft magnetic metal layer, It can also be arranged on soft magnetic metal layer by the methods of vapor deposition, magnetron sputtering, spraying plating, especially electric plating method.
The magnet can be the hard magnetic body with hard magnetic, such as be closed by Al-Ni-Co series permanent-magnet alloy, siderochrome cobalt system's permanent magnetism Gold, permanent-magnet ferrite, rare earth permanent-magnetic material or the compound composition of above-mentioned material magnet.The case where the magnet is hard magnetic body Under, in step 3, the magnetic field that magnet itself carries can be such that LED component adsorbs from epitaxial substrate.In order to enable institute It states LED component and is desorbed from the magnet and come out, can be placed higher than magnet under conditions of its Curie temperature makes its magnetic field disappear, So as to which LED component is come out from being desorbed from the magnet.
Preferably, the magnet is electromagnet.Be powered as a result, so that the magnet is generated magnetic field and by LED in step 3 Device is adsorbed from epitaxial substrate, and powering off can then be such that LED component be desorbed from electromagnet to obtain free LED out Device, control are got up very convenient.
Preferably, it is desorbed from magnet for the ease of LED component, can also set one layer without magnetic in the magnet surface pad Property wall, in step 3, the magnetic field of the magnet penetrates wall, so that LED component is adsorbed on wall.By This, can finally be separated by wall and magnet splits away off LED component from wall by the attraction of magnet, obtains To free LED component.The wall can be sheet plastic, without magnetic sheet metal, tissue sheet, thin fiber piece, thin glass The flake structures such as piece, thickness can be configured according to the intensity in magnetic field, generally can be set as 0.01 2.0mm.
As a result, in the manufacturing method of above-mentioned vertical structure LED device, by the way that soft magnetic metal layer is arranged on the led device, And in the stripping process of LED component, LED component is adsorbed from epitaxial substrate by magnet, whole process is not required to Ultraviolet viscosity reduction gummed paper is used, can avoid the pollution problem of ultraviolet viscosity reduction glue.
In order to enable multiple mutually independent LED components can be become after LED component separation in step 3, it is described Soft magnetic metal layer can be used patterned method and be formed, and the manufacturing method of the LED component is preferred are as follows:
In said step 1, after the production for completing semiconductor light emitting layer, lighting is applied on semiconductor light emitting layer Quick resin is simultaneously patterned into multiple blocky holes exposed on the outside of semiconductor light emitting layer;
In the step 2, soft magnetism is made by the plating that is powered in semiconductor light emitting layer outermost (such as first electrode) The plating film layer of metal is grown in the blocky hole of photosensitive resin, is finally peeled away photosensitive resin and is left block-like soft magnetic metal Layer;
In the step 3, semiconductor light emitting layer and soft magnetic metal layer are stripped out from epitaxial substrate, are being removed In the process, the semiconductor light emitting layer that soft magnetic metal layer is covered can be kept completely, and the semiconductor without soft magnetic metal layer covering Broken (or being crushed in the follow-up process) occurs for luminescent layer, and multiple dimensional profiles are consequently formed by soft magnetic metal layer overlay area institute The LED component of definition.
Wherein, the photosensitive resin it is graphical general (including film layer precuring, mask exposure, aobvious using yellow light method The procedure of processings such as shadow, post bake) realize, the thickness of photosensitive resin, which is generally set, is thicker than the soft magnetic metal layer, with formed compared with Smooth soft magnetic metal layer shape, or it is slightly thinner than soft magnetic metal layer, to form the soft magnetic metal layer shape of mushroom head.Photosensitive tree Rouge is in removing, according to general photosensitive resin (photoresist) material, can by the immersion of lye, rinse and realize.Work as LED component Including the no magnetic metal layer and when bonded layer, the no magnetic metal layer and bonded layer can also together with soft magnetic metal layer It is described bulk hole in grow, as a result, in the step 2, photosensitive resin removing after leave be include soft magnetic metal layer and Bump stack without magnetic metal layer and/or bonded layer.
The beneficial effects of the present invention are:
In the manufacturing process of vertical structure LED device, first soft magnetic metal layer is set on the led device, and in LED component Laser lift-off during, using the magnetic attraction between magnet and soft magnetic metal layer, LED component is absorbed from epitaxial substrate Come.Its stripping process is not required to avoid the contact of LED component with ultraviolet viscosity reduction gummed paper glue-line, also using ultraviolet viscosity reduction gummed paper Avoid the pollution that LED component is subject to.The LED component made in this way, when being used to be assembled into micro- light-emitting diode display, The pixel failures that micro- light-emitting diode display can be effectively reduced avoid micro- light-emitting diode display from integrally scrapping.
The manufacturing method of the present invention is further described in detail with embodiment below by way of attached drawing.
Detailed description of the invention
Fig. 1 is by embodiment one using the shape and film layer schematic diagram of LED;
Fig. 2 is by embodiment one using the schematic diagram of the manufacturing step (1) of LED;
Fig. 3 is by embodiment one using the schematic diagram of the manufacturing step (2) of LED;
Fig. 4 is by embodiment one using the schematic diagram of the manufacturing step (3) of LED;
Fig. 5 is by embodiment one using the schematic diagram of the manufacturing step (4) of LED;
Fig. 6 is by embodiment one using the schematic diagram of the manufacturing step (5) of LED;
Fig. 7 is by embodiment one using the schematic diagram of the manufacturing step (6) of LED;
Fig. 8 is by embodiment two using the schematic diagram of the manufacturing step (5) of LED;
Fig. 9 is by embodiment two using the schematic diagram of the manufacturing step (6) of LED.
Specific embodiment
Embodiment one
As shown in Figure 1, LED component 10 is the vertical structure round LED device of gaN series blue light, format diameter 0.3mm (0.03 0.8mm), film layer are followed successively by bonded layer 11, soft magnetic metal layer 12, without magnetic metal layer 13, first from inside to outside Electrode 14 and semiconductor light emitting layer 15.Wherein, bonded layer 11 is tin metal layer (tin alloy layers, indium metal or the alloy-layer of 5 μ m-thicks Can also), soft magnetic metal layer 12 be 40 μ m-thicks layer of iron-nickel alloy, no magnetic metal layer 13 be 40 μ m-thicks copper metal layer (gold, silver, Aluminum metal layer or alloy-layer can also), the nickel film that first electrode 14 is 100nm thickness;4 μm of the overall thickness of semiconductor light emitting layer 15, It includes N-type layer (n-GaN) 151, multiple quantum wells (MQWs) 152 and the P-type layer (p-GaN) as LED component second electrode 153。
The manufacturing method of LED component 10 is as follows:
(1), as shown in Fig. 2, using MOCVD (Metal Organic Chemical Vapor Deposition method) in sapphire substrates 16 Successively epitaxial growth N-type layer 151, multiple quantum well layer 152 and P-type layer 153 form semiconductor light emitting layer 15, using magnetron sputtering Nickel film is deposited in P-type layer, forms first electrode 14;
(2), as shown in figure 3, being coated with the photosensitive resin coating of 100 μ m-thicks in first electrode 14 using slot coated method 17, and be patterned using yellow light method (including the processing steps such as precuring, mask exposure, development, post bake), form series The circular hole 171 of diameter 0.3mm, wherein first electrode 14 is exposed in the bottom of circular hole 171, and the spacing of circular hole 171 is 40 μm;
(3), as shown in figure 4, using first electrode 14 as cathode, the plated copper layer 13 in circular hole 171, control electricity Plating electric current and the time make copper metal layer 13 with a thickness of 40 μm;Continue using first electrode 14 as cathode, into one in circular hole Walk electroplating iron-nickel alloy layer 12, control electroplating current and time make layer of iron-nickel alloy 12 with a thickness of 40 μm;Continue with first Electrode 14 is used as cathode, and tin metal layer 11 is further electroplated in circular hole, controls electroplating current and the time makes tin metal layer 11 With a thickness of 5 μm;
(4), as shown in figure 5, impregnating and rinsing out photosensitive resin coating 17 using film liquid is taken off, leave by copper metal layer 13, The serial boss 111 that layer of iron-nickel alloy 12 and tin metal layer 11 are formed by stacking (height is about 85 μ);
It (5), as shown in fig. 6, (can also be for by Al-Ni-Co series permanent-magnet alloy, siderochrome cobalt by the neodium magnet 18 with hard magnetic It is the magnet of permanent-magnet alloy, permanent-magnet ferrite, other rare earth permanent-magnetic materials or the compound composition of above-mentioned material) it posts in sapphire The positive side of substrate 16, posting the sheet plastic 181 of one layer of 0.3mm as wall on magnet 18 (can also be no magnetic metal foil The flake structures such as plate, tissue sheet, thin fiber piece, thin glass sheet), in the bottom side of sapphire substrates 16, irradiation ultraviolet laser 161 makes Thermal decomposition (reaction equation: 2GaN=2Ga+N occurs for 15 bottom of semiconductor layer2), as a result, due to 15 bottom binding force of semiconductor layer Disappear (or decrease), and LED component 10 will be adsorbed to wall under the magneticaction between soft magnetic metal layer 12 and magnet 18 Removing is realized on 181.Wherein, under the support of boss 111, the semiconductor light emitting layer 15 of 111 bottom of boss keeps (not having completely The semiconductor light emitting layer 15 for having boss 111 to support is most of to be crushed, and small part is bonded in the edge of LED component, in subsequent work Can be also crushed in sequence), it strips down to form LED component from sapphire substrates 16 with wall 181 together with boss 111 10, its 15 bottom of semiconductor light emitting layer is washed using dilute hydrochloric acid and decomposes remaining Ga metal.
(6), as shown in fig. 7, finally magnet 18 is removed, so that LED component 10 is split away off from wall 181.
In other schemes of the present embodiment, soft magnetic metal layer 12 can also be changed to the coating of pure iron or silicon steel, hard magnetic body 26 Al-Ni-Co series permanent-magnet alloy, siderochrome cobalt system permanent-magnet alloy, permanent-magnet ferrite, other rare earth permanent-magnetic materials or above-mentioned can be also changed to The compound retentive material that material is constituted.In other schemes of the present embodiment, LED component 10 can also be changed to GaP, GaAs etc. its (proportion of epitaxial substrate and semiconductor light emitting layer need to make corresponding change to the LED component of his luminescent color, can refer to shine and partly lead The prior art of body industry).In other schemes of the present embodiment, bonded layer 11 can also be changed to the electroplated layer of gold, in bonding, The coating wellability with higher (assuming that bonding process be melting welding) of gold and welding easy to form.
Embodiment two
As shown in figure 8, on the basis of example 1, changing magnet 18 into electromagnet 18', then constituting implementation of the invention Example two.Wherein, as shown in figure 8, in step (5), electromagnet 18', which is powered, generates magnetic field, and magnetic field produces soft magnetic metal layer 12 LED component 10 is stripped out by raw suction in conjunction with the irradiation of ultraviolet laser 161 from epitaxial substrate 16.As shown in figure 9, in step Suddenly in (6), electromagnet 18' is powered off and magnetic field disappears, so that LED component 10 is split away off from wall 181.
In addition, it should be noted that, the specific embodiments described in this specification, each section title etc. can not Together, the equivalent or simple change that all structure, feature and principles described according to the invention patent design are done, is included in the present invention In the protection scope of patent.Those skilled in the art can do described specific embodiment various each The mode that the modify or supplement or adopt of sample is similar substitutes, and without departing from structure of the invention or surmounts the claims Defined range, is within the scope of protection of the invention.

Claims (10)

1. a kind of manufacturing method of vertical structure LED device, it is characterized in that, comprising:
Step 1: growing the semiconductor light emitting layer of LED component on epitaxial substrate, it is coated on semiconductor light emitting layer photosensitive Resin is simultaneously patterned into multiple blocky holes exposed on the outside of semiconductor light emitting layer;
Step 2: by semiconductor light emitting layer outermost be powered plating make soft magnetic metal plating film layer be grown in it is photosensitive In the blocky hole of resin, it is finally peeled away photosensitive resin and leaves block-like soft magnetic metal layer, as a result, in semiconductor light emitting layer Outside forms the soft magnetic metal layer with soft magnetism, and at least described soft magnetic metal layer and semiconductor light emitting layer constitute LED component;
Step 3: the back side illuminaton ultraviolet laser in epitaxial substrate makes the bottom of semiconductor light emitting layer decompose, while Magnet is placed in the outside of LED component, using the magnetic attraction between magnet and soft magnetic metal layer, by LED component from epitaxial substrate It adsorbs, obtains the LED component of vertical structure, in which: the semiconductor light emitting layer that the soft magnetic metal layer is covered has been kept It is whole, and the semiconductor light emitting layer without soft magnetic metal layer covering occurs to be crushed, and multiple dimensional profiles are consequently formed by soft magnetic metal layer LED component defined in overlay area.
2. manufacturing method as described in claim 1, it is characterized in that: the soft magnetic metal layer is by iron, nickel, manganese and its alloy structure At soft magnetic metal layer.
3. manufacturing method as described in claim 1, it is characterized in that: the soft magnetic metal layer with a thickness of 10 200 μm.
4. manufacturing method as described in claim 1, it is characterized in that: the soft magnetic metal layer is made using electro-plating method.
5. manufacturing method as described in claim 1, it is characterized in that: the magnet is the hard magnetic body with hard magnetic.
6. manufacturing method as claimed in claim 5, it is characterized in that: in step 3, magnet is also placed higher than its Curie's temperature So that its magnetic field is disappeared under conditions of degree, is come out so that LED component is desorbed from the magnet.
7. manufacturing method as described in claim 1, it is characterized in that: the magnet is electromagnet, in the step 3, in institute It states to be powered on magnet and generates magnetic field and adsorb LED component from epitaxial substrate.
8. manufacturing method as claimed in claim 7, it is characterized in that: in the step 3, the magnet is also made to power off and make LED component is desorbed from electromagnet and comes out.
9. manufacturing method as described in claim 1, it is characterized in that: the magnet surface pad is equipped with non-magnetic wall, In step 3, the magnetic field of the magnet penetrates wall, so that LED component is adsorbed on wall.
10. manufacturing method as claimed in claim 9, it is characterized in that: in step 3, also by making the wall and magnet It separates so that LED component is not attracted by magnet and split away off from wall.
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