CN108847433B - A kind of manufacturing method of vertical structure LED device - Google Patents
A kind of manufacturing method of vertical structure LED device Download PDFInfo
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- CN108847433B CN108847433B CN201810659269.9A CN201810659269A CN108847433B CN 108847433 B CN108847433 B CN 108847433B CN 201810659269 A CN201810659269 A CN 201810659269A CN 108847433 B CN108847433 B CN 108847433B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 83
- 239000002184 metal Substances 0.000 claims abstract description 83
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 230000005389 magnetism Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 24
- 238000007747 plating Methods 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 229910045601 alloy Chemical group 0.000 claims description 7
- 239000000956 alloy Chemical group 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical group [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000011572 manganese Chemical group 0.000 claims description 3
- 230000009467 reduction Effects 0.000 abstract description 15
- 239000003292 glue Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 229910017709 Ni Co Inorganic materials 0.000 description 3
- 229910003267 Ni-Co Inorganic materials 0.000 description 3
- 229910003262 Ni‐Co Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- 229910000976 Electrical steel Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
A kind of manufacturing method of vertical structure LED device, comprising: Step 1: growing the semiconductor light emitting layer of LED component on epitaxial substrate；Step 2: forming the soft magnetic metal layer with soft magnetism in the outside of semiconductor light emitting layer, at least described soft magnetic metal layer and semiconductor light emitting layer constitute LED component；Step 3: the back side illuminaton ultraviolet laser in epitaxial substrate makes the bottom of semiconductor light emitting layer decompose, magnet is placed in the outside of LED component simultaneously, using the magnetic attraction between magnet and soft magnetic metal layer, LED component is adsorbed from epitaxial substrate, obtains the LED component of vertical structure.The manufacturing method of this vertical structure LED device, LED component are not required in removing using ultraviolet viscosity reduction gummed paper, because the pollution problem of ultraviolet viscosity reduction glue may be not present.
Description
Technical field
The present invention relates to a kind of manufacturing methods of vertical structure LED device, belong to the field of light emitting diode manufacturing technology.
Background technique
The electrode (pole P and the pole N) of vertical structure LED device is respectively at the two sides of device, will not tie up shining for device
Area, its electric current relatively evenly flows along longitudinal direction when work, thus this LED component have light-emitting area than greatly, brightness it is high, easy
The advantages of imperceptibility.In addition to this, the electrode of vertical structure LED device is respectively at the two sides of device, and be made fine (size
Within 200 μm) and when being assembled into micro- light-emitting diode display of micro-LED or mini-LED etc, the installation contraposition of device requires low
(only needing one electrode of alignment), thus have great importance to the development of micro- LED display technique.
Unlike horizontal structure LED component, the LED component of vertical structure during fabrication, when complete semiconductor light emitting
Layer (generally comprising P-type layer, Quantum Well, N-type layer) growth in epitaxial substrate (such as sapphire substrates) and thereon structure are (such as gold
Belong to electrode) production, on epitaxial substrate formed LED component after, in order to expose the medial electrode of LED component, need
LED component is stripped out from epitaxial substrate.Currently, the method that LED component is stripped out from epitaxial substrate, mainly
In the back side illuminaton ultraviolet laser of epitaxial substrate the bottom of semiconductor light emitting layer is decomposed, so that LED component and extension
The binding force of substrate reduces, then it is pulled from epitaxial substrate pull-up.
In the prior art, above-mentioned stripping process need to generally be realized by ultraviolet viscosity reduction gummed paper, i.e., first by ultraviolet viscosity reduction
Gummed paper is adhered to the outside of made LED component, after laser is irradiated in its bottom, by ultraviolet viscosity reduction gummed paper by LED component
It glues to pull from epitaxial substrate and, finally the just irradiating ultraviolet light on ultraviolet viscosity reduction gummed paper, so that the viscous force of ultraviolet viscosity reduction gummed paper
It is reduced so that LED component is detached from ultraviolet viscosity reduction gummed paper.However, in this approach, the glue-line on ultraviolet viscosity reduction gummed paper may
Remain in the outside of LED component and be contaminated it, when the LED component being contaminated is assembled into micro- light-emitting diode display, can lead
The failure of respective pixel in micro- light-emitting diode display is caused, and then the entirety of micro- light-emitting diode display is caused to be scrapped.
Summary of the invention
It is an object of the present invention to provide a kind of manufacturing method of vertical structure LED device, LED component is not required in removing
Using ultraviolet viscosity reduction gummed paper, because the pollution problem of ultraviolet viscosity reduction glue may be not present.Used technical solution is as follows:
A kind of manufacturing method of vertical structure LED device, it is characterized in that, comprising:
Step 1: growing the semiconductor light emitting layer of LED component on epitaxial substrate；
Step 2: the soft magnetic metal layer with soft magnetism is formed in the outside of semiconductor light emitting layer, at least described soft magnetism gold
Belong to layer and semiconductor light emitting layer constitutes LED component；
Step 3: the back side illuminaton ultraviolet laser in epitaxial substrate makes the bottom of semiconductor light emitting layer decompose, together
When in the outside of LED component place magnet, using the magnetic attraction between magnet and soft magnetic metal layer, by LED component from epitaxial base
It is adsorbed on bottom, obtains the LED component of vertical structure.
The LED component is specifically as follows the inorganic semiconductor LED of the various emission wavelengths of the series such as GaP, GaAs, GaN
Device, semiconductor light emitting layer generally comprise P-type layer (such as p-GaN), Quantum Well (such as InGaN/GaN) and N-type layer (such as n-
GaN), in addition to this, it may also include heavily doped P-type layer, heavily doped N-type layer etc. and (partly led for improving the film layer of LED component performance
The more detailed film layer structure of body luminescent layer and stoicheiometry can refer to the prior art of LED manufacturing, not be unfolded to carry out herein
Introduce), in said step 1, it is above-mentioned that the methods of MOCVD epitaxial growth on epitaxial substrate (such as sapphire) generally can be used
Semiconductor light emitting layer.It preferably, can also be in one layer of the outer side covering metallic diaphragm as first electrode of semiconductor light emitting layer, such as
Ni, Ti metallic film being covered in P-type layer, in order to improve soft magnetic metal layer made by semiconductor light emitting layer and step 2
Contact.In addition to this, the outside of semiconductor light emitting layer can also cover one layer thicker without magnetic metal layer, for adjusting institute
Film layer position of the soft magnetic metal layer in entire LED component is stated, so that thicknesses of layers of the soft magnetic metal layer in entire LED component
More rationally (thickness of such as soft magnetic metal layer is no more than the half of LED component integral thickness and in eccentric position with position
Set), the no magnetic metal layer can be made of the metal or alloy of gold, silver, copper, aluminium etc. nonmagnetic (relative permeability < 10)
Film layer can be arranged by the methods of vapor deposition, magnetron sputtering, plating, spraying plating on first electrode.
The soft magnetic metal layer is the film layer of soft magnetic metal, it is ensured that its is conductive in order to constituting on the outside of LED
Conductive electrode, soft magnetic metal is to have the metal of low-coercivity and high magnetic permeability (relative permeability > 100), general to locate
In demagnetized state without magnetic field, it is also ensured that will not attract each other when each LED component is got along and cause to reunite.Specifically, institute
Stating soft magnetic metal layer can be the soft magnetism gold being made of the magnetic metals such as iron, nickel, manganese (such as pure iron) and its alloy (such as silicon steel)
Belong to layer, can be made by the methods of vapor deposition, magnetron sputtering, spraying plating, plating.In order to guarantee that magnet has soft magnetic metal layer
There are enough magnetic attractions, and can be used in supporting semiconductor light emitting layer in step 3, avoids half that soft magnetic metal is covered
Conductor luminescent layer it is broken, the preferably described soft magnetic metal layer with a thickness of 10 200 μm；In order to realize 10 200 μm of thickness
Soft magnetic metal layer, the further preferred soft magnetic metal layer are made using electro-plating method, specifically, can be by above-mentioned extension
Piece is immersed in the electroplate liquid of soft magnetic metal layer, such as the electroplate liquid of iron, nickel, manganese magnetic metal, and most by semiconductor light emitting layer
The film layer (such as P-type layer) or first electrode in outside grow the soft magnetic metal layer, using the side of plating as cathode on it
Method grows soft magnetic metal layer, and the speed of growth is fast, is easy to reach 10 200 μm of thickness.In order to improve the key of the LED component
Performance is closed, bonded layer may further be provided on the soft magnetic metal layer, the bonded layer can be low-melting-point metal layer (as such as
Indium, tin metal layer) or soft metal layer (such as gold, silver metal layer), its general thickness is no more than the half of soft magnetic metal layer,
It can also be arranged on soft magnetic metal layer by the methods of vapor deposition, magnetron sputtering, spraying plating, especially electric plating method.
The magnet can be the hard magnetic body with hard magnetic, such as be closed by Al-Ni-Co series permanent-magnet alloy, siderochrome cobalt system's permanent magnetism
Gold, permanent-magnet ferrite, rare earth permanent-magnetic material or the compound composition of above-mentioned material magnet.The case where the magnet is hard magnetic body
Under, in step 3, the magnetic field that magnet itself carries can be such that LED component adsorbs from epitaxial substrate.In order to enable institute
It states LED component and is desorbed from the magnet and come out, can be placed higher than magnet under conditions of its Curie temperature makes its magnetic field disappear,
So as to which LED component is come out from being desorbed from the magnet.
Preferably, the magnet is electromagnet.Be powered as a result, so that the magnet is generated magnetic field and by LED in step 3
Device is adsorbed from epitaxial substrate, and powering off can then be such that LED component be desorbed from electromagnet to obtain free LED out
Device, control are got up very convenient.
Preferably, it is desorbed from magnet for the ease of LED component, can also set one layer without magnetic in the magnet surface pad
Property wall, in step 3, the magnetic field of the magnet penetrates wall, so that LED component is adsorbed on wall.By
This, can finally be separated by wall and magnet splits away off LED component from wall by the attraction of magnet, obtains
To free LED component.The wall can be sheet plastic, without magnetic sheet metal, tissue sheet, thin fiber piece, thin glass
The flake structures such as piece, thickness can be configured according to the intensity in magnetic field, generally can be set as 0.01 2.0mm.
As a result, in the manufacturing method of above-mentioned vertical structure LED device, by the way that soft magnetic metal layer is arranged on the led device,
And in the stripping process of LED component, LED component is adsorbed from epitaxial substrate by magnet, whole process is not required to
Ultraviolet viscosity reduction gummed paper is used, can avoid the pollution problem of ultraviolet viscosity reduction glue.
In order to enable multiple mutually independent LED components can be become after LED component separation in step 3, it is described
Soft magnetic metal layer can be used patterned method and be formed, and the manufacturing method of the LED component is preferred are as follows:
In said step 1, after the production for completing semiconductor light emitting layer, lighting is applied on semiconductor light emitting layer
Quick resin is simultaneously patterned into multiple blocky holes exposed on the outside of semiconductor light emitting layer；
In the step 2, soft magnetism is made by the plating that is powered in semiconductor light emitting layer outermost (such as first electrode)
The plating film layer of metal is grown in the blocky hole of photosensitive resin, is finally peeled away photosensitive resin and is left block-like soft magnetic metal
Layer；
In the step 3, semiconductor light emitting layer and soft magnetic metal layer are stripped out from epitaxial substrate, are being removed
In the process, the semiconductor light emitting layer that soft magnetic metal layer is covered can be kept completely, and the semiconductor without soft magnetic metal layer covering
Broken (or being crushed in the follow-up process) occurs for luminescent layer, and multiple dimensional profiles are consequently formed by soft magnetic metal layer overlay area institute
The LED component of definition.
Wherein, the photosensitive resin it is graphical general (including film layer precuring, mask exposure, aobvious using yellow light method
The procedure of processings such as shadow, post bake) realize, the thickness of photosensitive resin, which is generally set, is thicker than the soft magnetic metal layer, with formed compared with
Smooth soft magnetic metal layer shape, or it is slightly thinner than soft magnetic metal layer, to form the soft magnetic metal layer shape of mushroom head.Photosensitive tree
Rouge is in removing, according to general photosensitive resin (photoresist) material, can by the immersion of lye, rinse and realize.Work as LED component
Including the no magnetic metal layer and when bonded layer, the no magnetic metal layer and bonded layer can also together with soft magnetic metal layer
It is described bulk hole in grow, as a result, in the step 2, photosensitive resin removing after leave be include soft magnetic metal layer and
Bump stack without magnetic metal layer and/or bonded layer.
The beneficial effects of the present invention are:
In the manufacturing process of vertical structure LED device, first soft magnetic metal layer is set on the led device, and in LED component
Laser lift-off during, using the magnetic attraction between magnet and soft magnetic metal layer, LED component is absorbed from epitaxial substrate
Come.Its stripping process is not required to avoid the contact of LED component with ultraviolet viscosity reduction gummed paper glue-line, also using ultraviolet viscosity reduction gummed paper
Avoid the pollution that LED component is subject to.The LED component made in this way, when being used to be assembled into micro- light-emitting diode display,
The pixel failures that micro- light-emitting diode display can be effectively reduced avoid micro- light-emitting diode display from integrally scrapping.
The manufacturing method of the present invention is further described in detail with embodiment below by way of attached drawing.
Detailed description of the invention
Fig. 1 is by embodiment one using the shape and film layer schematic diagram of LED；
Fig. 2 is by embodiment one using the schematic diagram of the manufacturing step (1) of LED；
Fig. 3 is by embodiment one using the schematic diagram of the manufacturing step (2) of LED；
Fig. 4 is by embodiment one using the schematic diagram of the manufacturing step (3) of LED；
Fig. 5 is by embodiment one using the schematic diagram of the manufacturing step (4) of LED；
Fig. 6 is by embodiment one using the schematic diagram of the manufacturing step (5) of LED；
Fig. 7 is by embodiment one using the schematic diagram of the manufacturing step (6) of LED；
Fig. 8 is by embodiment two using the schematic diagram of the manufacturing step (5) of LED；
Fig. 9 is by embodiment two using the schematic diagram of the manufacturing step (6) of LED.
Specific embodiment
Embodiment one
As shown in Figure 1, LED component 10 is the vertical structure round LED device of gaN series blue light, format diameter 0.3mm
(0.03 0.8mm), film layer are followed successively by bonded layer 11, soft magnetic metal layer 12, without magnetic metal layer 13, first from inside to outside
Electrode 14 and semiconductor light emitting layer 15.Wherein, bonded layer 11 is tin metal layer (tin alloy layers, indium metal or the alloy-layer of 5 μ m-thicks
Can also), soft magnetic metal layer 12 be 40 μ m-thicks layer of iron-nickel alloy, no magnetic metal layer 13 be 40 μ m-thicks copper metal layer (gold, silver,
Aluminum metal layer or alloy-layer can also), the nickel film that first electrode 14 is 100nm thickness；4 μm of the overall thickness of semiconductor light emitting layer 15,
It includes N-type layer (n-GaN) 151, multiple quantum wells (MQWs) 152 and the P-type layer (p-GaN) as LED component second electrode
153。
The manufacturing method of LED component 10 is as follows:
(1), as shown in Fig. 2, using MOCVD (Metal Organic Chemical Vapor Deposition method) in sapphire substrates 16
Successively epitaxial growth N-type layer 151, multiple quantum well layer 152 and P-type layer 153 form semiconductor light emitting layer 15, using magnetron sputtering
Nickel film is deposited in P-type layer, forms first electrode 14；
(2), as shown in figure 3, being coated with the photosensitive resin coating of 100 μ m-thicks in first electrode 14 using slot coated method
17, and be patterned using yellow light method (including the processing steps such as precuring, mask exposure, development, post bake), form series
The circular hole 171 of diameter 0.3mm, wherein first electrode 14 is exposed in the bottom of circular hole 171, and the spacing of circular hole 171 is 40 μm；
(3), as shown in figure 4, using first electrode 14 as cathode, the plated copper layer 13 in circular hole 171, control electricity
Plating electric current and the time make copper metal layer 13 with a thickness of 40 μm；Continue using first electrode 14 as cathode, into one in circular hole
Walk electroplating iron-nickel alloy layer 12, control electroplating current and time make layer of iron-nickel alloy 12 with a thickness of 40 μm；Continue with first
Electrode 14 is used as cathode, and tin metal layer 11 is further electroplated in circular hole, controls electroplating current and the time makes tin metal layer 11
With a thickness of 5 μm；
(4), as shown in figure 5, impregnating and rinsing out photosensitive resin coating 17 using film liquid is taken off, leave by copper metal layer 13,
The serial boss 111 that layer of iron-nickel alloy 12 and tin metal layer 11 are formed by stacking (height is about 85 μ)；
It (5), as shown in fig. 6, (can also be for by Al-Ni-Co series permanent-magnet alloy, siderochrome cobalt by the neodium magnet 18 with hard magnetic
It is the magnet of permanent-magnet alloy, permanent-magnet ferrite, other rare earth permanent-magnetic materials or the compound composition of above-mentioned material) it posts in sapphire
The positive side of substrate 16, posting the sheet plastic 181 of one layer of 0.3mm as wall on magnet 18 (can also be no magnetic metal foil
The flake structures such as plate, tissue sheet, thin fiber piece, thin glass sheet), in the bottom side of sapphire substrates 16, irradiation ultraviolet laser 161 makes
Thermal decomposition (reaction equation: 2GaN=2Ga+N occurs for 15 bottom of semiconductor layer2), as a result, due to 15 bottom binding force of semiconductor layer
Disappear (or decrease), and LED component 10 will be adsorbed to wall under the magneticaction between soft magnetic metal layer 12 and magnet 18
Removing is realized on 181.Wherein, under the support of boss 111, the semiconductor light emitting layer 15 of 111 bottom of boss keeps (not having completely
The semiconductor light emitting layer 15 for having boss 111 to support is most of to be crushed, and small part is bonded in the edge of LED component, in subsequent work
Can be also crushed in sequence), it strips down to form LED component from sapphire substrates 16 with wall 181 together with boss 111
10, its 15 bottom of semiconductor light emitting layer is washed using dilute hydrochloric acid and decomposes remaining Ga metal.
(6), as shown in fig. 7, finally magnet 18 is removed, so that LED component 10 is split away off from wall 181.
In other schemes of the present embodiment, soft magnetic metal layer 12 can also be changed to the coating of pure iron or silicon steel, hard magnetic body 26
Al-Ni-Co series permanent-magnet alloy, siderochrome cobalt system permanent-magnet alloy, permanent-magnet ferrite, other rare earth permanent-magnetic materials or above-mentioned can be also changed to
The compound retentive material that material is constituted.In other schemes of the present embodiment, LED component 10 can also be changed to GaP, GaAs etc. its
(proportion of epitaxial substrate and semiconductor light emitting layer need to make corresponding change to the LED component of his luminescent color, can refer to shine and partly lead
The prior art of body industry).In other schemes of the present embodiment, bonded layer 11 can also be changed to the electroplated layer of gold, in bonding,
The coating wellability with higher (assuming that bonding process be melting welding) of gold and welding easy to form.
Embodiment two
As shown in figure 8, on the basis of example 1, changing magnet 18 into electromagnet 18', then constituting implementation of the invention
Example two.Wherein, as shown in figure 8, in step (5), electromagnet 18', which is powered, generates magnetic field, and magnetic field produces soft magnetic metal layer 12
LED component 10 is stripped out by raw suction in conjunction with the irradiation of ultraviolet laser 161 from epitaxial substrate 16.As shown in figure 9, in step
Suddenly in (6), electromagnet 18' is powered off and magnetic field disappears, so that LED component 10 is split away off from wall 181.
In addition, it should be noted that, the specific embodiments described in this specification, each section title etc. can not
Together, the equivalent or simple change that all structure, feature and principles described according to the invention patent design are done, is included in the present invention
In the protection scope of patent.Those skilled in the art can do described specific embodiment various each
The mode that the modify or supplement or adopt of sample is similar substitutes, and without departing from structure of the invention or surmounts the claims
Defined range, is within the scope of protection of the invention.
Claims (10)
1. a kind of manufacturing method of vertical structure LED device, it is characterized in that, comprising:
Step 1: growing the semiconductor light emitting layer of LED component on epitaxial substrate, it is coated on semiconductor light emitting layer photosensitive
Resin is simultaneously patterned into multiple blocky holes exposed on the outside of semiconductor light emitting layer；
Step 2: by semiconductor light emitting layer outermost be powered plating make soft magnetic metal plating film layer be grown in it is photosensitive
In the blocky hole of resin, it is finally peeled away photosensitive resin and leaves block-like soft magnetic metal layer, as a result, in semiconductor light emitting layer
Outside forms the soft magnetic metal layer with soft magnetism, and at least described soft magnetic metal layer and semiconductor light emitting layer constitute LED component；
Step 3: the back side illuminaton ultraviolet laser in epitaxial substrate makes the bottom of semiconductor light emitting layer decompose, while
Magnet is placed in the outside of LED component, using the magnetic attraction between magnet and soft magnetic metal layer, by LED component from epitaxial substrate
It adsorbs, obtains the LED component of vertical structure, in which: the semiconductor light emitting layer that the soft magnetic metal layer is covered has been kept
It is whole, and the semiconductor light emitting layer without soft magnetic metal layer covering occurs to be crushed, and multiple dimensional profiles are consequently formed by soft magnetic metal layer
LED component defined in overlay area.
2. manufacturing method as described in claim 1, it is characterized in that: the soft magnetic metal layer is by iron, nickel, manganese and its alloy structure
At soft magnetic metal layer.
3. manufacturing method as described in claim 1, it is characterized in that: the soft magnetic metal layer with a thickness of 10 200 μm.
4. manufacturing method as described in claim 1, it is characterized in that: the soft magnetic metal layer is made using electro-plating method.
5. manufacturing method as described in claim 1, it is characterized in that: the magnet is the hard magnetic body with hard magnetic.
6. manufacturing method as claimed in claim 5, it is characterized in that: in step 3, magnet is also placed higher than its Curie's temperature
So that its magnetic field is disappeared under conditions of degree, is come out so that LED component is desorbed from the magnet.
7. manufacturing method as described in claim 1, it is characterized in that: the magnet is electromagnet, in the step 3, in institute
It states to be powered on magnet and generates magnetic field and adsorb LED component from epitaxial substrate.
8. manufacturing method as claimed in claim 7, it is characterized in that: in the step 3, the magnet is also made to power off and make
LED component is desorbed from electromagnet and comes out.
9. manufacturing method as described in claim 1, it is characterized in that: the magnet surface pad is equipped with non-magnetic wall,
In step 3, the magnetic field of the magnet penetrates wall, so that LED component is adsorbed on wall.
10. manufacturing method as claimed in claim 9, it is characterized in that: in step 3, also by making the wall and magnet
It separates so that LED component is not attracted by magnet and split away off from wall.
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| CN2018104519665 | 2018-05-12 | ||
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| CN201810543339.4A Active CN108682725B (en) | 2018-05-12 | 2018-05-31 | LED device with vertical structure and manufacturing method thereof |
| CN201810659269.9A Active CN108847433B (en) | 2018-05-12 | 2018-06-25 | A kind of manufacturing method of vertical structure LED device |
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| CN201810543339.4A Active CN108682725B (en) | 2018-05-12 | 2018-05-31 | LED device with vertical structure and manufacturing method thereof |
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| Publication number | Publication date |
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| CN108682725A (en) | 2018-10-19 |
| CN108682312B (en) | 2020-11-06 |
| CN108682312A (en) | 2018-10-19 |
| WO2019218775A1 (en) | 2019-11-21 |
| CN108682725B (en) | 2020-05-15 |
| CN108847433A (en) | 2018-11-20 |
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