CN105489530A - LED chip and fabrication method thereof - Google Patents
LED chip and fabrication method thereof Download PDFInfo
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- CN105489530A CN105489530A CN201510865501.0A CN201510865501A CN105489530A CN 105489530 A CN105489530 A CN 105489530A CN 201510865501 A CN201510865501 A CN 201510865501A CN 105489530 A CN105489530 A CN 105489530A
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 124
- 238000005520 cutting process Methods 0.000 claims abstract description 35
- 238000001816 cooling Methods 0.000 claims abstract description 18
- 238000001020 plasma etching Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 42
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000009713 electroplating Methods 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 14
- 238000005452 bending Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 43
- 239000004065 semiconductor Substances 0.000 description 22
- 238000002360 preparation method Methods 0.000 description 5
- 241000294743 Gamochaeta Species 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dicing (AREA)
- Led Devices (AREA)
Abstract
The invention discloses an LED chip and a fabrication method thereof. A magnetic layer is formed and is fixed on a magnet in the process of fabricating the LED chip; cooling treatment is carried out on the magnet in the process of etching a cutting tunnel of an epitaxial layer by a plasma etching process; and a lot of heat generated by the plasma etching process is quickly exported through the magnet, so that the heat emission efficiency is improved; the etching uniformity is improved; the conditions of bending of a flexible substrate, uneven etching rate and the like are avoided; and the yield of a product is improved. Meanwhile, the magnetic layer is formed at one side of the flexible substrate and is fixed on the magnet; and an LED wafer is flatly attached to a non-magnetic back board by mutual attraction characteristics of the magnetic layer and the magnet, so that the bending condition of the flexible substrate is further avoided.
Description
Technical field
The present invention relates to LED technology field, more specifically, relate to a kind of LED chip and preparation method thereof.
Background technology
LED(LightEmittingDiode, light-emitting diode) be a kind of utilize to release energy during Carrier recombination form luminous semiconductor device, LED chip has the many advantages such as power consumption is low, colourity is pure, the life-span is long, volume is little, the response time is fast, energy-conserving and environment-protective.In recent years, along with deepening continuously of studying LED chip, the great raising that the luminous efficiency of LED chip obtains, has been widely used in the every field such as display at present.Existing in making LED chip process, adopting through being everlasting in the process in the cutting tunnel that plasma etching industrial etching is larger, occurring the situation that etching is uneven and flexible substrates is bending, reducing the yield of product.
Summary of the invention
In view of this, the invention provides a kind of LED chip and preparation method thereof, improve the radiating efficiency in etching process, the amount of heat that plasma etching industrial produces is derived rapidly, improve the uniformity of etching, avoid the situation that flexible substrates is bending, improve the yield of product.
For achieving the above object, technical scheme provided by the invention is as follows:
A manufacture method for LED chip, comprising:
There is provided a base material, described base material comprises: substrate; Be positioned at the epitaxial loayer on any surface of substrate, described epitaxial loayer is divided into multiple luminous micro-structural by multiple cutting tunnel, and is filled with isolated material in described cutting tunnel; And, be positioned at the conductive reflective that described epitaxial loayer deviates from described substrate side;
Deviate from described substrate side in described conductive reflective and form flexible substrates;
Deviate from described substrate side in described flexible substrates and form magnetosphere;
Described substrate is peeled off from described epi-layer surface and forms LED wafer;
Described LED wafer is placed on non magnetic backboard, then magnet is placed on described non magnetic backboard and deviates from LED wafer side;
Adopt the cutting tunnel of plasma etching industrial to described epitaxial loayer to etch, to remove described isolated material and described cutting tunnel is extended to predetermined width, and cooling processing is carried out to magnet simultaneously;
Remove described magnet, described non magnetic backboard is separated with described LED wafer voluntarily;
Deviate from described magnet side at the epitaxial loayer that described LED wafer is corresponding and form connecting electrode;
Along described cutting tunnel, described LED wafer is cut, to obtain multiple LED chip.
Preferably, described isolated material is light-sensitive material.
Preferably, the conductive reflective deviating from described substrate side at described epitaxial loayer comprises: adopt electron beam evaporation plating to deviate from described substrate side at described epitaxial loayer and form conductive reflective.
Preferably, deviate from described substrate side formation flexible substrates in described conductive reflective to comprise: adopt electroplating technology to deviate from described substrate side in described conductive reflective and form flexible substrates.
Preferably, the material of described flexible substrates is one or more in copper, nickel, gold, silver.
Preferably, deviate from described substrate side formation magnetosphere in described flexible substrates to comprise: adopt electroplating technology to deviate from described substrate side in described flexible substrates and form magnetosphere.
Preferably, described magnetospheric material is one or more in iron, cobalt, nickel.
Preferably, deviate from described substrate side at described magnetosphere and form wear-resistant friction layer.
Preferably, the wear-resistant friction layer deviating from described substrate side at described magnetosphere comprises; Adopt electroplating technology to deviate from described substrate side at described magnetosphere and form wear-resistant friction layer.
Preferably, described wear-resistant friction layer is metal material, is one or more in chromium, nickel, gold, platinum.
Preferably, the material of described non magnetic backboard is the one in pottery, timber, glass, plastics.
Preferably, described substrate is comprised from described epi-layer surface stripping: adopt laser lift-off technique to be peeled off from described epi-layer surface by described substrate.
Preferably, carry out cooling processing to magnet to comprise: adopt liquid helium circulating cooling mode to carry out cooling processing to magnet.
Accordingly, present invention also offers a kind of LED chip, described LED chip adopts above-mentioned manufacture method to be made.
Compared to prior art, technical scheme provided by the invention at least has the following advantages:
A kind of LED chip provided by the invention and preparation method thereof, comprising: provide a base material, and described base material comprises: substrate; Be positioned at the epitaxial loayer on any surface of substrate, described epitaxial loayer is divided into multiple luminous micro-structural by multiple cutting tunnel, and is filled with isolated material in described cutting tunnel; And, be positioned at the conductive reflective that described epitaxial loayer deviates from described substrate side; Deviate from described substrate side in described conductive reflective and form flexible substrates; Deviate from described substrate side in described flexible substrates and form magnetosphere; Described substrate is peeled off from described epi-layer surface and forms LED wafer; Described LED wafer is placed on non magnetic backboard, then magnet is placed on described non magnetic backboard and deviates from LED wafer side; Adopt the cutting tunnel of plasma etching industrial to described epitaxial loayer to etch, to remove described isolated material and described cutting tunnel is extended to predetermined width, and cooling processing is carried out to magnet simultaneously; Remove described magnet, described non magnetic backboard is separated with described LED wafer voluntarily; Deviate from described magnet side at the epitaxial loayer that described LED wafer is corresponding and form connecting electrode; Along described cutting tunnel, described LED wafer is cut, to obtain multiple LED chip.
As shown in the above, technical scheme provided by the invention, form magnetosphere on a flexible substrate, utilizing the characteristic of attracting each other between magnetosphere and magnet to make, LED wafer is smooth fits on non magnetic backboard, make whole LED wafer and magnet form the heat radiation of combining closely to arrange, in the process adopting the cutting tunnel of plasma etching industrial to described epitaxial loayer to etch, cooling processing is carried out to magnet, cold air and whole LED wafer is made to produce good contact, rapidly the amount of heat that plasma etching industrial produces is derived by magnet, improve radiating efficiency, and then improve the uniformity of etching, avoid flexible substrates to bend, the unequal situation of etch rate, improve the yield of product, follow-up being removed by magnet can make non magnetic backboard be separated voluntarily with LED wafer, and technique is simple, effective improving production efficiency.Meanwhile, by forming magnetosphere be fixed on magnet in flexible substrates side, utilizing the characteristic of attracting each other between magnetosphere and magnet to make, LED wafer is smooth fits on non magnetic backboard, further avoid the situation that flexible substrates is bending.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the accompanying drawing provided.
The manufacture method flow chart of a kind of LED chip that Fig. 1 provides for the embodiment of the present application;
Fig. 2 a to Fig. 2 i is the structure flow chart that Fig. 1 manufacture method flow chart is corresponding.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
As described in background, existing in making LED chip process, adopting through being everlasting in the process in the cutting tunnel that plasma etching industrial etching is larger, occurring the situation that etching is uneven and flexible substrates is bending, reducing the yield of product.
Based on this, the embodiment of the present application provides a kind of manufacture method of LED chip, improves the radiating efficiency in etching process, the amount of heat that plasma etching industrial produces is derived rapidly, improve the uniformity of etching, avoid the situation that flexible substrates is bending, improve the yield of product.Specifically referring to figs. 1 to shown in Fig. 2 i, the manufacture method of the LED chip that the embodiment of the present application provides is described in detail.
The flow chart of the manufacture method of a kind of LED chip that Fig. 1 provides for the embodiment of the present application, Fig. 2 a to Fig. 2 i is the structure flow chart that Fig. 1 manufacture method flow chart is corresponding; Wherein, manufacture method comprises:
S1, provide a base material.
Shown in figure 2a, provide a base material 100, base material comprises:
Substrate 101;
Wherein, the substrate that the embodiment of the present application provides is Sapphire Substrate; Except above-mentioned material substrate, in other embodiments of the application, substrate can also be other materials, does not do concrete restriction to this application.
Be positioned at the epitaxial loayer 102 on any surface of substrate 101, epitaxial loayer 102 is divided into multiple luminous micro-structural by multiple cutting tunnel 103, and is filled with isolated material in cutting tunnel 103; Wherein, epitaxial loayer comprise be positioned at substrate surface the first semiconductor layer, be positioned at the active layer of the first semiconductor layer away from substrate side and be positioned at the second semiconductor layer of active layer away from substrate side.First semiconductor layer can be n type semiconductor layer, then the second semiconductor layer is p type semiconductor layer; Or the first semiconductor layer is p type semiconductor layer, and the second semiconductor layer is n type semiconductor layer.The material of the first semiconductor layer, active layer and the second semiconductor layer can be gallium nitride.
It should be noted that, the material of the embodiment of the present application to the first semiconductor layer provided, the second semiconductor layer and active layer does not do concrete restriction, needs to design according to practical application; In addition, the embodiment of the present application, for the conduction type of the first semiconductor layer and the second semiconductor layer, is not done concrete restriction equally, is needed to design according to practical application.
In addition, the isolated material that the embodiment of the present application provides is light-sensitive material, concrete, light-sensitive material is positive photoresist or negative photoresist, mainly prevent follow-up when epi-layer surface forms conductive reflective, the material of conductive reflective enters cutting tunnel, and then causes electrical problem that structure produces.
And be positioned at the conductive reflective 104 of epitaxial loayer 102 away from substrate side, wherein, conductive reflective can be metallic reflector.
S2, conductive reflective away from substrate side formed flexible substrates.
Shown in figure 2b, form flexible substrates 200 in conductive reflective 104 away from substrate 101 side.Concrete, form flexible substrates in conductive reflective away from substrate side and comprise:
Adopt electroplating technology to form flexible substrates in conductive reflective away from substrate side, wherein, the material of flexible substrates is one or more in copper, nickel, gold, silver.
The LED chip that the embodiment of the present application provides is the chip of vertical structure light-emitting, the flexible substrates that heat-sinking capability is high is adopted to make LED chip, the heat produced in LED chip luminescence process can be made, be delivered to more rapidly by flexible substrates on the substrate be connected electrically, improve heat dissipation environment during LED chip luminescence, meet the cooling requirements of high-power LED chip.
S3, flexible substrates away from substrate side formed magnetosphere.
Shown in figure 2c, form magnetosphere 300 in flexible substrates 200 away from substrate 101 side.Concrete, form magnetosphere in flexible substrates away from substrate side and comprise: adopt electroplating technology to form magnetosphere in flexible substrates away from substrate side, wherein, magnetospheric material is one or more in iron, cobalt, nickel.
The LED chip that the embodiment of the present application provides is the chip of vertical structure light-emitting, the flexible substrates that heat-sinking capability is high is adopted to make LED chip, magnetosphere is formed in flexible substrates away from substrate side, by magnet and magnetospheric interaction in subsequent technique, closely be fitted in smooth for flexible substrates on magnetosphere, solve the heat dissipation problem of flexible metal basement as machining during LED substrate and plasma etching process, make the structure of LED chip more closely complete simultaneously.
Concrete, form wear-resistant friction layer in magnetosphere 300 away from substrate side; Comprise in the wear-resistant friction layer of magnetosphere away from substrate side; Wear-resistant friction layer is formed in magnetosphere away from substrate side with electroplating technology; Wear-resistant friction layer is metal material, is one or more in chromium, nickel, gold, platinum; Wear-resistant friction layer can prevent the technique of non magnetic backboard and postorder to magnetospheric damage of scraping damage, oxidation, corrosion etc.
S4, by substrate from epi-layer surface peel off formed LED wafer.
Shown in figure 2d, substrate 101 is formed LED wafer 110 from the sur-face peeling of epitaxial loayer 102.Concrete, substrate is peeled off from epi-layer surface and comprises: adopt laser lift-off technique to be peeled off from epi-layer surface by substrate.
S5, LED wafer is deviated from epitaxial loayer side be fixed on magnet.
Shown in figure 2e, LED wafer 110 is placed on non magnetic backboard 400, then magnet 500 is placed on non magnetic backboard deviates from LED wafer side; The magnetic properties attracted each other by magnetosphere and magnet and the adhesion between flexible substrates and magnetosphere are greater than the polarity between magnetosphere and magnetic, make that flexible substrates is smooth to be fitted on magnetosphere.
S6, to cutting tunnel etch further, and remove isolated material.
Shown in figure 2f, adopt the cutting tunnel 103 of plasma etching industrial to epitaxial loayer 102 to etch, to remove isolated material and cutting tunnel 103 is extended to predetermined width, and cooling processing is carried out to magnet 500 simultaneously.Concrete, when carrying out plasma etching industrial, needing by protective layer, the epitaxial loayer outside predetermined width to be covered, to protect it, avoiding unnecessary etching.
Wherein, carry out cooling processing to magnet to comprise: adopt liquid helium circulating cooling mode to carry out cooling processing to magnet.
S7, making connecting electrode.
Shown in figure 2g, deviate from flexible substrates 200 side at the epitaxial loayer 102 that luminous micro-structural is corresponding and form connecting electrode 600.Further, when making connecting electrode, passivation protection can be carried out.
It should be noted that, when the second semiconductor layer in epitaxial loayer is n type semiconductor layer, then connecting electrode is N-type electrode, and the part in conductive reflective correspondence cutting tunnel is P-type electrode; Or when the second semiconductor layer in epitaxial loayer is p type semiconductor layer, then connecting electrode is P-type electrode, and the part in conductive reflective correspondence cutting tunnel is N-type electrode.
S8, removal magnet.
Shown in figure 2h, remove magnet 500, non magnetic backboard 400 is separated with LED wafer 110 voluntarily, technique is simple, effective improving production efficiency; In addition, the magnet be removed can be reused, and saves production cost.
S9, cutting tunnel, edge cut LED wafer, to obtain multiple LED chip.
Shown in figure 2i, LED wafer 110 is cut, to obtain multiple LED chip along cutting tunnel.
Accordingly, the embodiment of the present application additionally provides a kind of LED chip, and the manufacture method that LED chip adopts above-described embodiment to provide is made.
A kind of LED chip provided by the invention and preparation method thereof, comprising: provide a base material, and described base material comprises: substrate; Be positioned at the epitaxial loayer on any surface of substrate, described epitaxial loayer is divided into multiple luminous micro-structural by multiple cutting tunnel, and is filled with isolated material in described cutting tunnel; And, be positioned at the conductive reflective that described epitaxial loayer deviates from described substrate side; Deviate from described substrate side in described conductive reflective and form flexible substrates; Deviate from described substrate side in described flexible substrates and form magnetosphere; Described substrate is peeled off from described epi-layer surface and forms LED wafer; Described LED wafer is placed on non magnetic backboard, then magnet is placed on described non magnetic backboard and deviates from LED wafer side; Adopt the cutting tunnel of plasma etching industrial to described epitaxial loayer to etch, to remove described isolated material and described cutting tunnel is extended to predetermined width, and cooling processing is carried out to magnet simultaneously; Remove described magnet, described non magnetic backboard is separated with described LED wafer voluntarily; Deviate from described magnet side at the epitaxial loayer that described LED wafer is corresponding and form connecting electrode; Along described cutting tunnel, described LED wafer is cut, to obtain multiple LED chip.
As shown in the above, technical scheme provided by the invention, form magnetosphere on a flexible substrate, utilizing the characteristic of attracting each other between magnetosphere and magnet to make, LED wafer is smooth fits on non magnetic backboard, make whole LED wafer and magnet form the heat radiation of combining closely to arrange, in the process adopting the cutting tunnel of plasma etching industrial to described epitaxial loayer to etch, cooling processing is carried out to magnet, cold air and whole LED wafer is made to produce good contact, rapidly the amount of heat that plasma etching industrial produces is derived by magnet, improve radiating efficiency, and then improve the uniformity of etching, avoid flexible substrates to bend, the unequal situation of etch rate, improve the yield of product, follow-up being removed by magnet can make non magnetic backboard be separated voluntarily with LED wafer, and technique is simple, effective improving production efficiency.Meanwhile, by forming magnetosphere be fixed on magnet in flexible substrates side, utilizing the characteristic of attracting each other between magnetosphere and magnet to make, LED wafer is smooth fits on non magnetic backboard, further avoid the situation that flexible substrates is bending.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (14)
1. a manufacture method for LED chip, comprising:
There is provided a base material, described base material comprises: substrate; Be positioned at the epitaxial loayer on any surface of substrate, described epitaxial loayer is divided into multiple luminous micro-structural by multiple cutting tunnel, and is filled with isolated material in described cutting tunnel; And, be positioned at the conductive reflective that described epitaxial loayer deviates from described substrate side;
Deviate from described substrate side in described conductive reflective and form flexible substrates;
Deviate from described substrate side in described flexible substrates and form magnetosphere;
Described substrate is peeled off from described epi-layer surface and forms LED wafer;
Described LED wafer is placed on non magnetic backboard, then magnet is placed on described non magnetic backboard and deviates from LED wafer side;
Adopt the cutting tunnel of plasma etching industrial to described epitaxial loayer to etch, to remove described isolated material and described cutting tunnel is extended to predetermined width, and cooling processing is carried out to magnet simultaneously;
Remove described magnet, described non magnetic backboard is separated with described LED wafer voluntarily;
Deviate from described magnet side at the epitaxial loayer that described LED wafer is corresponding and form connecting electrode;
Along described cutting tunnel, described LED wafer is cut, to obtain multiple LED chip.
2. the manufacture method of LED chip according to claim 1, is characterized in that, described isolated material is light-sensitive material.
3. the manufacture method of LED chip according to claim 1, is characterized in that, the conductive reflective deviating from described substrate side at described epitaxial loayer comprises: adopt electron beam evaporation plating to deviate from described substrate side at described epitaxial loayer and form conductive reflective.
4. the manufacture method of LED chip according to claim 1, is characterized in that, deviates from described substrate side formation flexible substrates and comprises: adopt electroplating technology to deviate from described substrate side in described conductive reflective and form flexible substrates in described conductive reflective.
5. the manufacture method of LED chip according to claim 1, is characterized in that, the material of described flexible substrates is one or more in copper, nickel, gold, silver.
6. the manufacture method of LED chip according to claim 1, is characterized in that, deviates from described substrate side formation magnetosphere and comprises: adopt electroplating technology to deviate from described substrate side in described flexible substrates and form magnetosphere in described flexible substrates.
7. the manufacture method of LED chip according to claim 1, is characterized in that, described magnetospheric material is one or more in iron, cobalt, nickel.
8. the manufacture method of LED chip according to claim 1, is characterized in that, deviates from described substrate side form wear-resistant friction layer at described magnetosphere.
9. the manufacture method of LED chip according to claim 8, is characterized in that, the wear-resistant friction layer deviating from described substrate side at described magnetosphere comprises; Adopt electroplating technology to deviate from described substrate side at described magnetosphere and form wear-resistant friction layer.
10. the manufacture method of the LED chip described in any one according to Claim 8 or 9, it is characterized in that, described wear-resistant friction layer is metal material, is one or more in chromium, nickel, gold, platinum.
The manufacture method of 11. LED chips according to claim 1, the material of described non magnetic backboard is the one in pottery, timber, glass, plastics.
The manufacture method of 12. LED chips according to claim 1, is characterized in that, is peeled off by described substrate and comprises: adopt laser lift-off technique to be peeled off from described epi-layer surface by described substrate from described epi-layer surface.
The manufacture method of 13. LED chips according to claim 1, is characterized in that, carries out cooling processing comprise magnet: adopt liquid helium circulating cooling mode to carry out cooling processing to magnet.
14. 1 kinds of LED chips, is characterized in that, described LED chip adopts the manufacture method described in claim 1 ~ 13 any one to be made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510865501.0A CN105489530A (en) | 2015-12-02 | 2015-12-02 | LED chip and fabrication method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510865501.0A CN105489530A (en) | 2015-12-02 | 2015-12-02 | LED chip and fabrication method thereof |
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| CN105489530A true CN105489530A (en) | 2016-04-13 |
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| CN201510865501.0A Pending CN105489530A (en) | 2015-12-02 | 2015-12-02 | LED chip and fabrication method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108847433A (en) * | 2018-05-12 | 2018-11-20 | 汕头超声显示器技术有限公司 | A kind of manufacturing method of vertical structure LED device |
| CN112053629A (en) * | 2019-06-05 | 2020-12-08 | 株式会社日本有机雷特显示器 | Display device and method for manufacturing display device |
| CN112838082A (en) * | 2020-12-31 | 2021-05-25 | 深圳Tcl新技术有限公司 | LED lamp panel preparation method, magnetic LED chip and preparation method thereof, and LED display screen |
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| CN108847433A (en) * | 2018-05-12 | 2018-11-20 | 汕头超声显示器技术有限公司 | A kind of manufacturing method of vertical structure LED device |
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| CN112053629A (en) * | 2019-06-05 | 2020-12-08 | 株式会社日本有机雷特显示器 | Display device and method for manufacturing display device |
| CN112838082A (en) * | 2020-12-31 | 2021-05-25 | 深圳Tcl新技术有限公司 | LED lamp panel preparation method, magnetic LED chip and preparation method thereof, and LED display screen |
| CN112838082B (en) * | 2020-12-31 | 2024-06-04 | 深圳Tcl新技术有限公司 | LED lamp panel preparation method, magnetic LED chip and preparation method thereof, and LED display screen |
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