CN203787469U - Light-emitting structure - Google Patents
Light-emitting structure Download PDFInfo
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- CN203787469U CN203787469U CN201420167035.XU CN201420167035U CN203787469U CN 203787469 U CN203787469 U CN 203787469U CN 201420167035 U CN201420167035 U CN 201420167035U CN 203787469 U CN203787469 U CN 203787469U
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- metal
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- electrical metal
- ray structure
- bearing substrate
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Abstract
Provided is a light-emitting structure which comprises a packaging substrate and a light-emitting body which is arranged on the packaging substrate. The packaging substrate comprises a bearing base plate and multiple metal units which are arranged on the bearing base plate. Distance between peripheral end points is defined by distance between any two points on the peripheries of the metal units. The light-emitting body comprises first electrical metal and second electrical metal which are different in polarity and separately arranged. Electrical metal distance is defined by the shortest distance between the first electrical metal and the second electrical metal. Electrical metal distance between the first electrical metal and the second electrical metal is greater than the longest peripheral end point distance of the metal units. Therefore, the packaging substrate and the light-emitting body can be arbitrarily arranged in any direction without alignment when the packaging substrate and the light-emitting body are combined so that cost in purchasing an alignment instrument can be saved, the flip chip packaging process of chips can be simplified, the wafer level flip chip packaging process can be saved and manufacturing efficiency can be enhanced.
Description
Technical field
The present invention relates to a kind of ray structure, relate in particular to covering when covering of crystalline substance (flip chip) assembling and a kind of wafer scale is brilliant fits of a kind of chip, do not need the ray structure of contraposition.
Background technology
Light-emitting diode (Lighting Emitting Diodes; LED) be a kind ofly by semi-conducting material, to be formed, utilize the electronics in semiconductor be combined with electric hole and send photon, produce the light-emitting component of the spectrum of different frequency, due to LED source there is good colorimetric purity, without mercury, life-span the characteristic such as long and power saving, therefore in the application such as illumination and display backlight source, come into one's own gradually.
The encapsulation juncture of light-emitting diode mainly contains two kinds, and one is routing (wire bonding) mode, and another is for covering crystalline substance (flip chip) mode; Routing encapsulation technology is that chip is placed on substrate, then uses routing technology (wire bonding) to be connected with the tie point on base plate for packaging.Chip package technology is by the long projection of chip tie point (bump), then chip is turned projection is directly connected with substrate (substrate).Specifically, the encapsulating structure that covers crystal type must carry out contraposition by covering brilliant electrode and the circuit pattern on substrate when encapsulating, to produce electric connection.
In addition, the chip metal-clad mode of light-emitting diode mainly contains two kinds, and one is whole metal-clad mode, and what another was wafer scale covers brilliant laminating type; Whole metal-clad technology is that the metal level of the metal level of chip and substrate is fitted.The brilliant laminating type that covers of wafer scale is long bump metal on chip, then chip is turned to the metal straight making on bump metal and substrate (substrate) and connects in succession, after growth substrate is removed, carries out chip manufacturing.Specifically, the structure of covering brilliant laminating type of wafer scale must will be covered brilliant bump metal and the circuit pattern metal on substrate carries out contraposition when laminating is carried out, and is electrically connected.
Though the chip package of chip or wafer scale cover brilliant coating technique, in the process of contraposition, if slightly mishap may cause short circuit, and contraposition instrument is very expensive again accurately, causes the increase of cost of manufacture.
Summary of the invention
Main purpose of the present invention, is to solve in existing light-emitting diode flip chip structure and must after covering the electrical metal of crystalline substance and the circuit pattern contraposition of bearing substrate, just can carries out subsequent technique, and increase the problem of the cost of making.
For reaching above-mentioned purpose, the invention provides a kind of ray structure, include a package substrates, and the luminous element being arranged in described package substrates, described package substrates comprises a bearing substrate, and the metal unit of many spread configurations on described bearing substrate, each metal unit has a contact-making surface, and the take up an official post distance definition of 2 of described contact-making surface outer rim goes out a peripheral end-point distances.Described luminous element includes electrically different and is separately arranged at one first electrical metal and the one second electrical metal of the same side, the shortest distance definition between the described first electrical metal and the described second electrical metal goes out an electrical intermetallic distance, the described first electrical metal has one and contacts the first surface that forms electric connection with a plurality of described contact-making surfaces, the described second electrical metal has one and contacts a second surface that forms electric connection with a plurality of described contact-making surfaces, the wherein said first electrical metal and the second electrically intermetallic described electrical intermetallic are apart from being greater than the longest described peripheral end-point distances of described contact-making surface.
In an embodiment, the shape of described a plurality of contact-making surfaces choosing is square, triangle, cross and the circular group forming freely.
In an embodiment, described a plurality of metal unit with array way spread configuration on described bearing substrate.
In an embodiment, described a plurality of metal unit are separated from each other and are crisscross arranged on described bearing substrate.
In an embodiment, the described first electrical metal is a p utmost point, and the described second electrical metal is a n utmost point.
In an embodiment, the luminous lamination of described luminous element Wei Yi three races's nitrogen series semiconductor.
In an embodiment, described bearing substrate is silicon substrate or the high heat-conducting ceramic substrate such as AIN, BN being electrically insulated.
In an embodiment, described luminous element has more a rough surface, is positioned at the opposite side of the described first electrical metal and the second electrical metal.
In an embodiment, described bearing substrate comprises one first electrode and one second electrode that is arranged at described bearing substrate opposite side with respect to described a plurality of metal unit, and the first electric connection passage and one second that runs through described bearing substrate is electrically connected passage, described first is electrically connected passage two ends connects respectively a plurality of described metal unit and described the first electrode, and described second is electrically connected passage two ends connects respectively a plurality of described metal unit and described the second electrode.
In an embodiment, described ray structure more comprises one and is formed at described luminous element with respect to the transparent growth substrate of the described first electrical metal and the described second electrical metal one side.
The beneficial effect of this creation is: owing to having a plurality of being able on described bearing substrate, form with the described first electrical metal and the described second electrical Metal Contact the described metal unit being electrically connected, and the described electrical intermetallic between the described first electrical metal and the described second electrical metal is apart from being greater than the described peripheral end-point distances that described metal unit is the longest, therefore, when the described first electrical metal contacts with a plurality of described metal unit, while contacting with a plurality of described metal unit with the second electrical metal, the described first electrical metal and the described second electrical metal do not have short circuit phenomenon, and then make described package substrates and described luminous element carry out in conjunction with time, do not need contraposition, be able to arbitrarily with any direction, place, not only save the cost of buying contraposition instrument, simultaneously can facilitating chip chip package flow process and omit wafer scale and cover brilliant encapsulation flow process, promote make efficiency.
Below in conjunction with the drawings and specific embodiments, describe the present invention, but not as a limitation of the invention.
Accompanying drawing explanation
Fig. 1 is the structural representation of a preferred embodiment of the present invention;
Fig. 2-1 is the package substrates vertical view of a preferred embodiment of the present invention;
Fig. 2-2 are the metal unit enlarged diagram () of a preferred embodiment of the present invention;
Fig. 3 is the luminous element upward view of a preferred embodiment of the present invention;
Fig. 4 is the combination schematic diagram of a preferred embodiment of the present invention;
Fig. 5-1 is another preferred embodiment package substrates vertical view of the present invention;
Fig. 5-2 are another preferred embodiment metal unit enlarged diagram (two) of the present invention;
Fig. 6 is the present invention's structural representation of a preferred embodiment again.
Embodiment
Relevant detailed description of the present invention and technology contents, now just coordinate accompanying drawing to be described as follows:
Refer to Fig. 1, structural representation for a preferred embodiment of the present invention, as shown in the figure: the present invention is a kind of ray structure, include a package substrates 1, and the luminous element 2 being arranged in described package substrates 1, described package substrates 1 comprises a bearing substrate 11, the metal unit 12 of many spread configurations on described bearing substrate 11, with respect to described a plurality of metal unit 12, be arranged at one first electrode 13 and one second electrode 14 of described bearing substrate 11 opposite sides, and the first electric connection passage 15 and one second that runs through described bearing substrate 11 is electrically connected passage 16, described the first electrode 13 can be p-type electrode or N-shaped electrode, described the second electrode 14 can be N-shaped electrode or the p-type electrode different with described the first electrode 13 polarity, described first is electrically connected passage 15 two ends connects respectively a plurality of described metal unit 12 and described the first electrode 13, described second is electrically connected passage 16 two ends connects respectively a plurality of described metal unit 12 and described the second electrode 14.Each metal unit 12 has a contact-making surface 121, wherein said bearing substrate 11 can be an insulation and the good material of heat conduction, comprise the group that silicon, aluminium nitride (AlN) and CVD diamond that the choosing of at least one material is freely electrically insulated form, for instance, described bearing substrate 11 can be silicon substrate or the high heat-conducting ceramic substrate such as AIN, BN being electrically insulated, and described metal unit 12 is a metal or alloy material, for example gold, silver, aluminium or its alloy.
Described luminous element 2 can emit beam while driven by voltage, and the color of described light depends on the material of described luminous element 2, wherein said luminous element 2 can be without the base unit in the wafer of cutting, that is to say and on described wafer, there are a plurality of described luminous elements 2, and with described package substrates 1 combination, or described luminous element 2 can be a chip having cut in advance, and directly and described package substrates 1 combination.In an embodiment, described luminous element 2 Wei Yi three races nitrogen series (aluminum indium gallium nitride) semiconductor light emitting laminations, specifically, described luminous element 2 includes the different and one first electrical metal 21 that minute is arranged of polarity and the electrical semiconductor layer 23 of one second electrical metal 22, one first, active layer 24, a second electrical semiconductor layer 25.Described active layer 24 is formed on the described first electrical semiconductor 23, the described second electrical semiconductor layer 25 is formed on described active layer 24, etched the described first electrical semiconductor layer 23 removing with exposed part of the some of second electrical semiconductor layer 25 and active layer 24, and the described first electrical metal 21 is arranged on the described first electrical semiconductor layer 23 and forms an ohmic contact (Ohmic contact), the described second electrical semiconductor layer 25 is provided with the described second electrical metal 22 and forms an ohmic contact (Ohmic contact) with the described second electrical metal 22.The described first electrical metal 21 is a metal or alloy material with the material of the described second electrical metal 22, for example gold, silver, aluminium or its alloy, the described first electrical metal 21 has respectively a first surface 211 and a second surface 221 with the described second electrical metal 22.
In an embodiment, if Fig. 2-1 is with as shown in Fig. 2-2, described a plurality of metal unit 12 with array way spread configuration on described bearing substrate 11, and described a plurality of metal unit 12 is not in contact with one another (as shown in Fig. 2-1) each other, the take up an official post distance definition of 2 of described contact-making surface 121 outer rims goes out a peripheral end points distance A 1 (as shown in Fig. 2-2), the shape of described contact-making surface 121 is not limit, can be square, triangle, the geometric figures such as cross or circle, the present embodiment with square contact-making surface 121 for example, but not to be limited, in the present embodiment, the longest described peripheral end points distance A 1 is described square cornerwise length.As shown in Figure 3, the pattern that the described first electrical metal 21 and the described second electrical metal 22 form for strip spaced apart, beeline between the described first electrical metal 21 and the described second electrical metal 22 defines an electrical intermetallic apart from A2, the wherein said first electrical metal 21 is a p utmost point, the described second electrical metal 22 is a n utmost point, or otherwise the described first electrical metal 21 is a n utmost point, the described second electrical metal 22 is a p utmost point, and described electrical intermetallic is greater than the longest described peripheral end points distance A 1 of described contact-making surface 121 apart from A2.As shown in Figure 4, in packaging technology, described luminous element 2 is positioned in described package substrates 1, make the described first surface 211 of the described first electrical metal 21 and described a plurality of contact-making surfaces 121 of a plurality of described metal unit 12 contact and form to be electrically connected, and the described second surface 221 of the described second electrical metal 22 contacts formation electric connection with described a plurality of contact-making surfaces 121 of other a plurality of described metal unit 12.Because the described electrical intermetallic between the described first electrical metal 21 and the described second electrical metal 22 is greater than described peripheral end points distance A 1 the longest on the described contact-making surface 121 of described metal unit 12 apart from A2, therefore, the described first electrical metal 21 under any angle, neither can touch the described contact-making surface 121 of same described metal unit 12 with the described second electrical metal 22.And then make described package substrates 1 and described luminous element 2 carry out in conjunction with time, do not need contraposition, be able to arbitrarily with any direction, place, can simplify encapsulation flow process, promote make efficiency.Wherein, the described first electrical semiconductor 23 has more by a surface coarsening technique and produces a matsurface 231, and the extraction efficiency of light is improved, and also makes the luminous efficiency of luminous element 2 simultaneously, obtains Integral lifting.
In another embodiment, if Fig. 5-1 is with as shown in Fig. 5-2, described a plurality of metal unit 12 is cross, be separated from each other and be crisscross arranged on described bearing substrate 11, in the present embodiment, the longest described peripheral end points distance A 1 is the longest cornerwise length of described cross, and described electrical intermetallic is still greater than the longest described peripheral end points distance A 1 apart from A2, therefore can, with the described luminous element 2 of arbitrarily angled placement in described package substrates 1, not need contraposition equally.
In an embodiment again, as shown in Figure 6, described ray structure more comprises one and is formed at described luminous element 2 with respect to the transparent growth substrate 3 of the described first electrical metal 21 and the described second electrical metal 22 1 sides, and the material of described transparent growth substrate 3 is selected from the group being comprised of sapphire (Al2O3), gallium nitride (GaN) and carborundum (SiC).Described transparent growth substrate 3 is spread the light producing from described luminous element 2, makes described ray structure lighting angle expand.
Owing to thering are a plurality of described metal unit 12 that form electric connection that are able to contact with the described first electrical metal 21 and the described second electrical metal 22 on described bearing substrate 11, and the electrical intermetallic between the described first electrical metal 21 and the described second electrical metal 22 is greater than the longest described peripheral end points distance A 1 of described contact-making surface 121 apart from A2, therefore, when the described first electrical metal 21 contacts with the described contact-making surface 121 of a plurality of described metal unit 12, the described second electrical metal 22 can't contact with the described a plurality of metal unit 12 that contacted with the described first electrical metal 21, and then make described package substrates 1 and described luminous element 2 when encapsulating, do not need contraposition, be able to arbitrarily with any direction, place, not only save the cost of buying contraposition instrument, can simplify encapsulation flow process simultaneously, promote make efficiency.
Certainly; the present invention also can have other various embodiments; in the situation that not deviating from spirit of the present invention and essence thereof; those of ordinary skill in the art are when making according to the present invention various corresponding changes and distortion, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (10)
1. a ray structure, include a package substrates, and the luminous element being arranged in described package substrates, described package substrates comprises a bearing substrate, and the metal unit of a plurality of spread configurations on described bearing substrate, the take up an official post distance definition of 2 of described metal unit outer rim goes out a peripheral end-point distances, described luminous element includes one first electrical metal and the one second electrical metal that polarity is different and minute be arranged, beeline between the described first electrical metal and the described second electrical metal defines an electrical intermetallic distance, the wherein said first electrical metal and the second electrically intermetallic described electrical intermetallic are apart from being greater than the described peripheral end-point distances that described metal unit is the longest.
2. ray structure as claimed in claim 1, is characterized in that, the shape choosing of described a plurality of contact-making surfaces is square, triangle, cross and the circular group forming freely.
3. ray structure as claimed in claim 1, is characterized in that, described a plurality of metal unit are separated from each other and are crisscross arranged on described bearing substrate.
4. ray structure as claimed in claim 1, is characterized in that, described a plurality of metal unit with array way spread configuration on described bearing substrate.
5. ray structure as claimed in claim 1, is characterized in that, the described first electrical metal is a p utmost point, and the described second electrical metal is a n utmost point.
6. ray structure as claimed in claim 1, is characterized in that the luminous lamination of described luminous element Wei Yi three races's nitrogen series semiconductor.
7. ray structure as claimed in claim 1, is characterized in that, described luminous element has more a rough surface, is positioned at the opposite side of the described first electrical metal and the second electrical metal.
8. ray structure as claimed in claim 1, is characterized in that, described bearing substrate is the high heat-conducting ceramic substrates such as silicon substrate or AIN, BN.
9. ray structure as claimed in claim 1, it is characterized in that, described bearing substrate comprises one first electrode and one second electrode that is arranged at described bearing substrate opposite side with respect to described a plurality of metal unit, and the first electric connection passage and one second that runs through described bearing substrate is electrically connected passage, described first is electrically connected passage two ends connects respectively a plurality of described metal unit and described the first electrode, and described second is electrically connected passage two ends connects respectively a plurality of described metal unit and described the second electrode.
10. ray structure as claimed in claim 1, is characterized in that, more comprises a transparent growth substrate, is formed at described luminous element with respect to the opposite side of the described first electrical metal and the second electrical metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420167035.XU CN203787469U (en) | 2014-04-08 | 2014-04-08 | Light-emitting structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420167035.XU CN203787469U (en) | 2014-04-08 | 2014-04-08 | Light-emitting structure |
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| Publication Number | Publication Date |
|---|---|
| CN203787469U true CN203787469U (en) | 2014-08-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420167035.XU Expired - Fee Related CN203787469U (en) | 2014-04-08 | 2014-04-08 | Light-emitting structure |
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| CN (1) | CN203787469U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104979461A (en) * | 2014-04-08 | 2015-10-14 | 林锦源 | Light emitting structure |
| CN106783816A (en) * | 2015-11-24 | 2017-05-31 | 林锦源 | LED array structure |
-
2014
- 2014-04-08 CN CN201420167035.XU patent/CN203787469U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104979461A (en) * | 2014-04-08 | 2015-10-14 | 林锦源 | Light emitting structure |
| CN106783816A (en) * | 2015-11-24 | 2017-05-31 | 林锦源 | LED array structure |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140820 Termination date: 20160408 |