JP4876356B2 - Method for manufacturing circuit element built-in substrate and method for manufacturing electric circuit device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a circuit element inspection method and inspection structure suitable for inspection of a light emitting element used in an image display device, for example, a circuit element built-in substrate and a manufacturing method thereof, and an electric circuit device and a manufacturing method thereof. .
[0002]
[Prior art]
As a semiconductor light emitting device, a low-temperature buffer layer and an n-side contact layer made of Si-doped GaN have been formed on the entire surface of a sapphire substrate, and an n-side clad layer made of Si-doped GaN and Si doped therein. A device is known in which an active layer made of InGaN, a p-side cladding layer made of Mg-doped AlGaN, a p-side contact layer made of Mg-doped GaN, and the like are stacked. As products that have such a structure and are commercially available, blue and green LEDs (Light Emitting Diodes) including 450 nm to 530 nm are mass-produced.
[0003]
In addition, when trying to grow gallium nitride, a sapphire substrate is often used. Usually, a sapphire substrate having a C-plane as a main surface is used, and the surface of the gallium nitride layer formed on the main surface is also used. An active layer having a C plane and necessarily formed on a plane parallel to the main surface of the substrate and a clad layer sandwiching the active layer also extend to a plane parallel to the C plane. As described above, in the semiconductor light emitting device having a structure in which each crystal layer is laminated with the substrate main surface as a reference, smoothness necessary for electrode formation or the like is obtained by utilizing the smoothness of the substrate main surface.
[0004]
However, there are problems such as generation of crystal defects due to lattice mismatch between the sapphire substrate and the gallium nitride to be grown, difficulty in cutting out a fine chip, high manufacturing cost, and poor productivity.
[0005]
[Course to Invention]
In order to solve such a problem, the applicant of the present invention has good crystallinity, can be miniaturized, can be modularized while suppressing manufacturing cost, and can be easily transported and mounted on a substrate. A display element and a method for manufacturing the same have already been proposed in Japanese Patent Application No. 2001-144452.
[0006]
This display element (hereinafter referred to as the prior application invention) has a structure shown in FIG. 30, for example. That is, for example, in the case of the light emitting diode 22 in the central portion, the chip is covered in order to electrically connect them corresponding to the electrode pads 16 and 49 and the electrode layer 57 on the second substrate 60. Openings (via holes) 65, 66, 67, 68, 69, and 70 are formed in the insulating layer 59, and wirings 63, 64, and 71 are further formed.
[0007]
In the manufacturing method, as shown in FIG. 15, a buffer layer of either AlN or GaN is first formed at a low temperature of 500 ° C. on a sapphire substrate 30 whose main surface is the C + plane. Thereafter, the temperature is raised to 1000 ° C. to form a silicon-doped GaN layer 31. Next, SiO ₂ Alternatively, a mask layer using SiN is formed on the entire surface in a thickness range of 100 to 500 nm, and a circular mask 32 of about 10 μm is formed using photolithography and hydrofluoric acid-based etchant.
[0008]
Next, as shown in FIG. 16, the GaN layer 31 is etched to about half the thickness. As a result, a silicon-doped GaN layer 31 having a step 39 is formed between the shape portion of the mask 32 and other portions.
[0009]
Next, as shown in FIG. 17, the mask 32 is removed and crystal growth is performed again. At this time, the growth temperature is raised to about 1000 ° C., and a silicon-doped GaN layer 33 is grown. The silicon-doped GaN layer 33 grows on the convex GaN layer 31 of the mask trace, and eventually becomes a hexagonal pyramid shape surrounded by an S plane inclined with respect to the main surface of the substrate. In this case, the hexagonal pyramid-shaped GaN layer 33 grows greatly only by taking time, but the GaN layers 33 do not interfere with each other even if grown, and in order to secure a margin for isolation between elements, The pitch of the layer 31 is sufficiently separated.
[0010]
When the size of the hexagonal pyramid is, for example, about 15 to 20 μm in width (one side is about 7.5 to 15 μm), the height is about 1.6 times that side (ie, about 10 to 16 μm) as a hexagonal cone. Become. The size of the hexagonal pyramid can be about 10 μm in width.
[0011]
Next, the growth temperature is reduced, and an InGaN layer 34 is grown as shown in FIG. Thereafter, the growth temperature is raised, and a magnesium-doped GaN layer 35 is grown on the InGaN layer 34. At this time, the thickness of the InGaN layer 34 is about 0.5 nm to 3 nm. Further, the active layer may be an (Al) GaN / InGaN quantum well layer, a multiple quantum well layer, or the like, or may have a multiple structure using GaN or InGaN functioning as a guide layer. In that case, it is desirable to grow an AlGaN layer on the InGaN layer.
[0012]
Next, as shown in FIG. 19, a p-electrode 37 is formed by vapor-depositing Ni / Pt / Au or Ni (Pd) / Pt / Au on the outermost layer grown in a hexagonal pyramid shape. Further, a part of the InGaN layer 34 that is the active layer and a part of the GaN layer 35 that is the p-type cladding layer are removed on the side close to the substrate to expose a part of the GaN layer 33, and Ti / An Al / Pt / Au electrode may be deposited to form an n electrode.
[0013]
FIG. 20 shows an enlarged view of one light emitting element (hereinafter sometimes referred to as a light emitting diode) 22 manufactured in the above manufacturing process. As shown in the figure, the configuration has a silicon-doped GaN layer 33 as a crystal layer on a sapphire substrate 30 with the C + plane as the main surface of the substrate. The silicon-doped GaN layer 33 has an S plane inclined with respect to the main surface of the substrate, and an InGaN layer 34 as an active layer is formed in a shape extending in parallel to the S plane. A magnesium-doped GaN layer 35 is formed on the InGaN layer 34 as a cladding layer. The p-electrode 37 is formed on the upper surface of the magnesium-doped GaN layer 35.
[0014]
As shown in FIG. 21A, which is a cross-sectional view of only the light emitting diode 22, and in FIG. 21B, which is a plan view thereof, it is selectively grown on the GaN layer 31 as a base growth layer and has a pyramidal hexagonal pyramid shape. A GaN layer 33 is formed. The inclined S-plane portion of the GaN layer 33 functions as a double heterostructure cladding. Further, an InGaN layer 34 which is an active layer is formed so as to cover the inclined S surface of the GaN layer 33, and a magnesium-doped GaN layer 35 is formed on the outside thereof. This magnesium-doped GaN layer 34 also functions as a cladding.
[0015]
The light-emitting element 22 is a GaN-based light-emitting diode, and in such a GaN-based light-emitting diode, laser ablation occurs due to laser irradiation that passes through the substrate, and a sapphire substrate and a GaN-based light-emitting diode accompany the phenomenon that GaN nitrogen vaporizes. The film is peeled off at the interface with the growth layer, and the device can be easily separated.
[0016]
These light-emitting elements 22 are formed densely on the sapphire substrate 30 and transferred separately on the resin 23 by a transfer process (not shown), and after forming an anode-side p-electrode on these, FIG. 23 is formed into a chip.
[0017]
That is, as shown in FIG. 23, the resin chip 24 has a substantially flat plate and its main surface has a substantially square shape. The shape of the resin chip 24 is a shape formed by solidifying the resin 23. Specifically, an uncured resin is applied over the entire surface so as to include each element 22, and after curing this, it is shown in FIG. The shape obtained by cutting the dicing line 6 by dicing or the like.
[0018]
Electrode pads 26 and 27 (corresponding to electrode pads 16 and 49 of light-emitting diodes described later) are formed on the front and back sides of the substantially flat resin 23, respectively. The electrode pads 26 and 27 are formed by forming a conductive layer such as a metal layer or a polycrystalline silicon layer as a material of the electrode pads 26 and 27 on the entire surface, and patterning the conductive electrode into a required electrode shape by a photolithography technique. The These electrode pads 26 and 27 are formed so as to be connected to the p electrode and the n electrode of the element 22 which is a light emitting element, and a via hole or the like is formed in the resin 23 when necessary.
[0019]
Here, the electrode pads 26 and 27 are formed on the front surface side and the back surface side of the resin chip 24, respectively, but it is also possible to form both electrode pads on one surface. The positions of the electrode pads 26 and 27 are shifted so that they do not overlap even if contacts are made from the upper side when the final wiring is formed. The shape of the electrode pads 26 and 27 is not limited to a square, and may be other shapes.
[0020]
By configuring such a resin forming chip 24, the periphery of the element 22 is covered with the resin 23, and the electrode pads 26 and 27 can be formed with high accuracy by flattening, and the electrode pad 26 can be formed in a wider area than the element 22. 27 can be extended, and handling is facilitated when the transfer in the next second transfer step is advanced by a suction jig. That is, as will be described later, since the final wiring is performed after the second transfer step, wiring defects are prevented by performing wiring using the electrode pads 26 and 27 having a relatively large size. .
[0021]
Next, a method for arranging the light emitting elements 22 in the state of FIG. 19 manufactured through the above steps will be described with reference to FIGS. As shown in FIG. 24, a plurality of light emitting diodes 22 are formed in a matrix on the main surface of the first substrate 30. The size of the light emitting diode 22 can be about 20 μm. As the constituent material of the first substrate 30, a material having a high transmittance at the wavelength of the laser used to irradiate the light emitting diode 22 such as a sapphire substrate is used.
[0022]
The light-emitting diode 22 is formed up to the p-electrode, but the final wiring has not yet been made, and an inter-element separation groove 42g is formed so that the individual light-emitting diodes 22 can be separated. The groove 42g is formed by reactive ion etching, for example. Such a first substrate 30 is opposed to the temporary holding member 43 and selective transfer is performed as shown in FIG.
[0023]
A peeling layer 44 and an adhesive layer 45 are formed in two layers on the surface of the temporary holding member 43 facing the first substrate 30. As the temporary holding member 43, a glass substrate, a quartz glass substrate, a plastic substrate, or the like can be used. As the peeling layer 44 on the temporary holding member 43, a fluorine coat, a silicone resin, a water-soluble adhesive (for example, polyvinyl chloride) is used. Alcohol: PVA), polyimide, or the like can be used.
[0024]
As the adhesive layer 45 of the temporary holding member 43, any one of an ultraviolet (UV) curable adhesive, a thermosetting adhesive, and a thermoplastic adhesive can be used. As an example, a quartz glass substrate is used as the temporary holding member 43, a polyimide film of 5 μm is formed as the release layer 44, and then a UV curable adhesive as the adhesive layer 45 is applied with a thickness of about 20 μm.
[0025]
The adhesive layer 45 of the temporary holding member 43 is adjusted so that the hardened region 45s and the uncured region 45y are mixed, and is aligned so that the light emitting diode 22 to be selectively transferred is located in the uncured region 45y. . Adjustment to mix the hardened region 45s and the uncured region 45y is not shown, but for example, a UV curable adhesive is selectively UV-exposed with an exposure machine at a pitch of 200 μm, and the light emitting diode 22 is transferred. What is necessary is just to make it the state which is uncured and is hardened otherwise.
[0026]
After such alignment, the light emitting diode 22 at the transfer target position is irradiated with laser light 46 from the back surface of the first substrate 30 as shown in FIG. 24, and the light emitting diode 22 is laser ablated from the first substrate 30. Use to peel. Since the GaN-based light emitting diode 22 decomposes into metallic Ga and nitrogen at the interface with sapphire, it can be peeled off relatively easily. An excimer laser, a harmonic YAG laser, or the like is used as the laser light 46 to be irradiated.
[0027]
As a result of peeling using this laser ablation, the light emitting diode 22 for selective irradiation is separated at the interface between the GaN layer and the first substrate 30, and the p electrode portion is pierced into the adhesive layer 45 on the opposite side, as shown in FIG. In this way, it is transcribed. Regarding the light emitting diode 22 in the region not irradiated with the other laser, the corresponding adhesive layer 45 is a hardened region 45 s and is not irradiated with the laser, so that it is transferred to the temporary holding member 43 side. There is no.
[0028]
In FIG. 24, only one light emitting diode 22 is selectively irradiated with laser, but it is assumed that the light emitting diode 22 is also irradiated with laser in a region separated by n pitches. By such selective transfer, as shown in FIG. 25, the light emitting diodes 22 are arranged on the temporary holding member 43 at a further distance than when the light emitting diodes 22 are arranged on the first substrate 30.
[0029]
The light emitting diode 22 is held by the adhesive layer 45 of the temporary holding member 43, and the back surface of the light emitting diode 22 is on the n electrode side (cathode electrode side). Since the electrode pad 27 is formed as shown in FIG. 25, the electrode pad 27 is electrically connected to the back surface of the light emitting diode 22.
[0030]
For example, the adhesive layer 45 is cleaned by etching the resin for adhesive with oxygen plasma and irradiating with UV ozone. Further, when the GaN-based light emitting diode is peeled off from the first substrate 30 made of a sapphire substrate by laser, Ga is deposited on the peeled surface, and therefore it is necessary to etch the Ga. Will be done with nitric acid. Thereafter, the electrode pad 27 is patterned.
[0031]
At this time, the electrode pad on the cathode side can be about 60 μm square. The electrode pad 27 is made of a transparent electrode (ITO, ZnO, etc.) or a material such as Ti / Al / Pt / Au. In the case of a transparent electrode, even if the back surface of the light emitting diode is largely covered, the light emission is not interrupted, so that the patterning accuracy is rough, a large electrode can be formed as shown in FIGS. 22 and 23, and the patterning process becomes easy.
[0032]
After the electrode pad 16 is formed, the adhesive layer 45 cured for each light emitting diode 22 is divided by a dicing process to form resin-formed chips corresponding to the respective light emitting diodes 22 as shown in FIGS. The dicing process is performed by dicing using mechanical means or laser dicing using a laser beam. The cut width by dicing depends on the size of the light emitting diode 22 covered with the adhesive layer 45 in the pixel of the image display device. For example, when a narrow cut having a width of 20 μm or less is necessary, the laser beam is used. It is necessary to perform processing with a laser. As the laser beam, an excimer laser, a harmonic YAG laser, a carbon dioxide gas laser, or the like can be used.
[0033]
In FIG. 26, the light-emitting diode 22 is transferred from the temporary holding member 44 to the second temporary holding member 47 to form the via hole 50 on the anode electrode (p electrode) side, and then the anode side electrode pad 26 is formed. The state which dicing the adhesive bond layer 45 which consists of resin to the resin chip 24 is shown.
[0034]
As a result of this dicing, an element isolation groove 51 is formed, and the light emitting diode 22 is divided into elements. The element isolation groove 51 is composed of a plurality of parallel lines extending vertically and horizontally as a planar pattern in order to separate the light emitting diodes 22 in a matrix form. At the bottom of the element isolation groove 51, the surface of the second temporary holding member 47 faces. The second temporary holding member 47 is a so-called dicing sheet in which, for example, a UV adhesive material is applied to a plastic substrate, and a material whose adhesive strength decreases when UV is irradiated can be used.
[0035]
As an example of this process, the surface of the adhesive layer 45 is etched with oxygen plasma until the surface of the light emitting diode 22 is exposed. The via hole 50 is also formed using an excimer laser, a harmonic YAG laser, a carbon dioxide gas laser, or the like. At this time, the via hole has a diameter of about 3 to 7 μm. The anode side electrode pad is formed of Ni / Pt / Au or the like. As described above, the dicing process is performed by dicing using a laser beam. The cut width depends on the size of the light emitting diode 22 covered with the adhesive layer 35 made of resin in the pixel of the image display device. As an example, a groove having a width of about 40 μm is formed by an excimer laser to form a chip shape.
[0036]
Next, as shown in FIG. 27, the light emitting diode 22 (resin chip 24) is peeled from the second temporary holding member 37 using mechanical means. At this time, a release layer 48 is formed on the second temporary holding member 47. The release layer 48 can be formed using, for example, a fluorine coat, a silicone resin, a water-soluble adhesive (for example, PVA), polyimide, or the like. For example, YAG third harmonic laser is irradiated from the back surface of the temporary holding member 47 on which such a release layer 48 is formed. Thereby, for example, when polyimide is used as the peeling layer 48, peeling occurs due to polyimide ablation at the interface between the polyimide and the quartz substrate, and each light emitting diode 22 is removed from the second temporary holding member 47 by the mechanical means. It can be easily peeled off.
[0037]
FIG. 27 is a view showing a state in which the light emitting diodes 22 arranged on the second temporary holding member 47 are picked up by the suction device 53. The suction holes 55 at this time are opened in a matrix at the pixel pitch of the image display device so that a large number of light emitting diodes 22 can be sucked together. The opening diameter at this time is about φ100 μm, for example, and is opened in a matrix of 600 μm pitch, and about 300 pieces can be adsorbed collectively.
[0038]
As the member of the suction hole 55, for example, a member produced by Ni electroforming or a metal plate 52 made of stainless steel (SUS) or the like is formed by etching. In the back of the suction hole 55 of the metal plate 52, An adsorption chamber 54 is formed, and the light-emitting diode 22 can be adsorbed by controlling the adsorption chamber 54 to a negative pressure. The light emitting diode 22 is covered with the adhesive layer 45 at this stage, and the upper surface thereof is substantially flattened. Therefore, selective adsorption by the adsorption device 53 can be easily advanced.
[0039]
FIG. 28 is a view showing a state where the light emitting diode 22 is transferred to the second substrate 60. When mounting on the second substrate 60, the adhesive layer 56 is applied to the second substrate 60 in advance, the adhesive layer 56 on the lower surface of the light emitting diode 22 is cured, and the light emitting diode 22 is fixed to the second substrate 60. Can be arranged. At the time of mounting, the suction chamber 54 of the suction device 53 is in a high pressure state, the coupling between the suction device 53 and the light emitting diode 22 is released, and the light emitting diode 22 is transferred to the second substrate 60 side. The adhesive layer 56 can be composed of a UV curable adhesive, a thermosetting adhesive, a thermoplastic adhesive, or the like.
[0040]
The position where the light emitting diode 22 is disposed is farther than the arrangement on the temporary holding members 43 and 47. At that time, energy for curing the resin of the adhesive layer 56 is supplied from the back surface of the second substrate 60 as indicated by an arrow. In the case of a UV curable adhesive, only the lower surface of the light emitting diode 22 is cured with a laser in the case of a thermosetting adhesive with a laser. In the case of a thermoplastic adhesive, the adhesive is similarly applied by laser irradiation. Bond by melting.
[0041]
In addition, an electrode layer 57 that also functions as a shadow mask is provided on the second substrate 60, and a black chrome layer 58 is provided on the screen side of the electrode layer 57, that is, the surface on the side where a person viewing the display device is present. Form. In this way, the contrast of the image can be improved, and the energy absorption rate in the black chrome layer 58 is increased so that the adhesive layer 56 is cured quickly by the selectively irradiated beam 73. can do. The UV irradiation during the transfer is about 1000 mJ / cm in the case of a UV curable adhesive. ² Irradiate.
[0042]
FIG. 29 is a view showing a state in which the light emitting diodes 22, 61, 62 of three colors R, G, B are arranged on the second substrate 60 and the insulating layer 59 is applied. If the suction device 53 used in FIG. 28 is used as it is and the mounting position of the second substrate 60 is simply shifted to the position of the color, pixels of three colors can be formed while the pitch as pixels is constant. . As the insulating layer 59, a transparent epoxy adhesive, a UV curable adhesive, polyimide, or the like can be used. The three color light emitting diodes 22, 61 and 62 do not necessarily have the same shape.
[0043]
In FIG. 29, the red light-emitting diode 61 has a structure not having a hexagonal pyramid GaN layer, and the shape thereof is different from that of the other light-emitting diodes 22 and 62. At this stage, the light-emitting diodes 22, 61 and 62 are already It is covered with the resin 43 as a resin chip, and the same handling is realized regardless of the difference in element structure.
[0044]
Next, as shown in FIG. 30, corresponding to the electrode pads 26 and 27 of the light emitting diode 22 and the electrode layer 57 on the second substrate 60, an opening (via hole) 65, 66, 67, 68, 69 and 70 are formed, and wiring is further formed. The opening is also formed using a laser beam, for example.
[0045]
The opening formed at this time, that is, the via hole, increases the area of the electrode pads 26, 27 of the light emitting diodes 22, 61, 62. Therefore, the via hole shape is large, and the positional accuracy of the via hole is directly formed in each light emitting diode. It can be formed with coarser accuracy than a via hole. For example, the via hole having a diameter of about 20 μm can be formed for the electrode pads 16 and 49 of about 60 μm square. In addition, since there are three types of depths of via holes connected to the wiring substrate, connected to the anode electrode, and connected to the cathode electrode, the formation is controlled by, for example, the number of laser pulses, Open the optimum depth.
[0046]
After the openings 65, 66, 67, 68, 69, 70 are formed in the insulating layer 59, the anode and cathode electrode pads of the light emitting diodes 22, 61, 62 and the electrode layer 57 for wiring of the second substrate 60 are connected. Wiring 63, 64, 71 to be formed is formed. Thereafter, a protective layer is formed on the wiring, and the panel of the image display device is completed. As the protective layer at this time, a material such as a transparent epoxy adhesive can be used as in the insulating layer 59 of FIG. This protective layer is heat-cured and completely covers the wiring. Thereafter, the driver IC is connected from the wiring at the end of the panel to manufacture the drive panel.
[0047]
In the arrangement method of the light emitting elements as described above, as shown in FIG. 25, the distance between the elements is already increased at the time when the light emitting diode 22 is held by the temporary holding member 43, and the widened interval is set. By utilizing this, it is possible to provide electrode pads 26 and 27 having a relatively large size. Since wiring using these relatively large electrode pads 26 and 27 is performed, wiring can be easily formed even when the final device size is significantly larger than the element size.
[0048]
Further, in the light emitting element arrangement method of this example, the periphery of the light emitting diode 22 is covered with the cured adhesive layer 45, and the electrode pads 26 and 27 can be formed with high precision by flattening, and the electrodes are formed in a wider area than the element. The pads 26 and 27 can be extended, and handling is facilitated when the transfer in the next second transfer step is advanced by a suction jig.
[0049]
As described above, according to the invention of the prior application, by embedding the light-emitting element in an insulating material, the light-emitting element is re-formed into a size that is easy to handle and modularized, so that handling properties can be ensured while reducing manufacturing costs. For example, the display element can be easily transported, and the drive electrode of the light emitting element is drawn out on the surface of the modularized display element, so that the power supply line and signal line formed on the substrate can be easily connected. It can be connected to these drive electrodes, and mounting on a substrate is very easy.
[0050]
[Problems to be solved by the invention]
However, although the prior invention has the above-described features, it has been found that there are still problems to be improved.
[0051]
That is, because the design and structure cannot be inspected when the light emitting device according to the invention of the prior application is embedded in the insulating layer, the lighting inspection in that state cannot be performed, and in the embedded state in the brightness variation of the LED or the insulating material. No information on whether or not the pad electrode was defective could not be obtained. For this reason, when the product is not turned on or the luminance is not uniform, the product must be discarded, resulting in a decrease in yield.
[0052]
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to inspect a circuit element and its inspection structure in a state before commercialization of the circuit element while maintaining the features of the invention of the prior application, a circuit element built-in substrate and its manufacturing method, and an electric circuit. It is to provide an apparatus and a manufacturing method thereof.
[0053]
[Means for Solving the Problems]
That is, the present invention extends the wiring connected to the electrode of the circuit element in a state where the circuit element is embedded in the insulating material to the inspection terminal, and inspects the characteristics of the circuit element through the inspection terminal. The present invention relates to a circuit element inspection method (hereinafter referred to as the inspection method of the present invention).
[0054]
According to the inspection method of the present invention, in the state where the circuit element is embedded in the insulating material, the wiring connected to the electrode of the circuit element is extended to the inspection terminal, and the inspection is performed through the inspection terminal. By inspecting in the state of the product, information on the characteristics of the circuit elements can be obtained at a stage before commercialization, and the circuit elements having uniform characteristics can be selected.
[0055]
Further, the present invention provides a circuit element inspection structure (hereinafter referred to as the present invention) in which a wiring connected to an electrode of the circuit element is extended to the circuit element characteristic inspection terminal in a state where the circuit element is embedded in an insulating material. (Referred to as the inspection structure of the invention).
[0056]
According to the inspection structure of the present invention, since the structure is based on the above-described inspection method of the present invention, it is possible to provide an inspection structure that exhibits the same effect as the inspection method of the present invention.
[0057]
The present invention also relates to a circuit element built-in substrate (hereinafter referred to as a circuit element built-in substrate of the present invention) in which the above-described inspection structure is provided on the substrate.
[0058]
According to the circuit element built-in substrate of the present invention, since the above-described inspection structure of the present invention is provided on the substrate, the circuit element sufficiently characterized by the inspection method of the present invention is incorporated. It is possible to provide a circuit element-embedded substrate that can provide the same effects as the inspection method.
[0059]
In addition, the present invention, when manufacturing the circuit element built-in substrate described above,
Embedding a circuit element in an insulating material;
Bonding the insulating material surface opposite to the embedded surface of the circuit element to a first holding member;
After separating the insulating material in which the circuit element is embedded from the first holding member, providing a wiring for taking out one electrode of the circuit element and extending the wiring to one inspection terminal When,
Providing a lead-out wiring on the other electrode of the circuit element and extending the wiring to the other inspection terminal;
The circuit element built-in substrate manufacturing method (hereinafter referred to as the circuit element built-in substrate manufacturing method of the present invention) having the above.
[0060]
According to the method for manufacturing a circuit element-embedded substrate of the present invention, the circuit element-embedded substrate having the above-described inspection structure of the present invention can be obtained. A method can be provided.
[0061]
In the present invention, the circuit element is embedded in an insulating material, and the wiring connected to the electrode of the circuit element extends to the side end of the insulating material and is exposed here, and the wiring is further connected to the wiring circuit. The present invention relates to an electric circuit device (hereinafter referred to as an electric circuit device of the present invention) connected to a substrate.
[0062]
According to the electric circuit device of the present invention, since the circuit element is formed based on the above-described inspection structure of the present invention, the characteristics can be sufficiently inspected by the above-described inspection method of the present invention, and similar effects can be obtained. An electric circuit device having circuit elements to be played can be provided.
[0063]
Further, the present invention, when manufacturing an electric circuit device having a circuit element of the inspection structure of the present invention described above,
A step of obtaining a circuit element built-in substrate by the manufacturing method of the inspection structure described above;
Inspecting the characteristics of the circuit element via the inspection terminal;
After the inspection, cutting between the electrode and the inspection terminal, and chipping the insulating material embedded with the circuit element,
Fixing the chip to the printed circuit board;
Connecting the wiring to the wired circuit board;
This invention relates to a method for manufacturing an electric circuit device (hereinafter referred to as a method for manufacturing an electric circuit device of the present invention).
[0064]
According to the method for manufacturing the electric circuit device of the present invention, the circuit element having the above-described inspection structure is formed into a chip and connected to the printed circuit board after the inspection of the characteristics by the above-described inspection method. It is possible to provide a method of manufacturing an electric circuit device with good reproducibility that has an effect.
[0065]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described.
[0066]
In the inspection method, inspection structure, circuit element built-in substrate, circuit element built-in substrate manufacturing method, electric circuit device, and electric circuit device manufacturing method according to the present invention described above, the circuit element is embedded on the insulating material. A wiring for taking out one electrode of the circuit element is provided on the surface of the circuit element, and a wiring for taking out the other electrode of the circuit element is provided on the other side of the circuit element. It is desirable that the test terminal is extended to the inspection terminal and inspected by contacting the probing terminal with the inspection terminal.
[0067]
And after the said test | inspection, it is desirable to cut | disconnect between the said electrode and the said test | inspection terminal, and to chip-form the said insulating material which embed | buried the said circuit element.
[0068]
In this case, the positive electrode and the negative electrode of the inspection terminal may be provided on the same side edge of the insulating material, and the positive electrode and the negative electrode of the inspection terminal may be provided on different side edges of the insulating material, respectively.
[0069]
When the positive electrode and the negative electrode of the inspection terminal are provided on the same side edge, it is desirable that the wiring connected to the one electrode and the wiring connected to the other electrode are provided on the same insulating material.
[0070]
In addition, when the positive electrode and the negative electrode of the inspection terminal are provided on different side edges, an insulating layer is formed on the wiring connected to the one electrode and the wiring connected to the other electrode, and on the insulating layer It is desirable to provide the inspection terminal in
[0071]
Then, it is desirable to transfer the circuit element from the base and inspect the characteristics of the circuit element embedded in the insulating material.
[0072]
In this case, it is desirable to hold the insulating material in which the circuit element is embedded on the substrate before the transfer.
[0073]
And the characteristic of the said circuit element can be test | inspected for every line or / and individually, and the lighting test | inspection of the circuit element which is a light emitting element can be performed.
[0074]
Accordingly, it is possible to satisfactorily perform a lighting inspection of the light emitting element used in the image display device or the light source device in which the wiring is led to the circuit wiring board through the insulating layer provided on the insulating material. .
[0075]
The above-described preferred embodiment of the present invention will be specifically described.
[0076]
FIG. 1A shows the first embodiment, and FIG. 1B shows the second embodiment, both of which are schematic diagrams of the extended wiring and the inspection terminal. In these drawings, a chip region 24A shows a state before being cut out as the resin chip 24 of FIGS. 22 and 23 described above. In these figures, the shapes of the electrode pad 16 (corresponding to the aforementioned 27) and the electrode pad 49 (corresponding to the aforementioned 26) are shown in the same shape as FIG. 22 and FIG. Further, unless otherwise noted, the second embodiment will be described as an example of the first embodiment.
[0077]
As shown in FIG. 1A, the first embodiment is an example in which an inspection terminal (+) 1 and an inspection terminal (−) 2 are provided on the same side edge of an insulating material, and are formed in each chip region 24A. The wiring 3 b is extended from the electrode pad 49 and the wiring 3 a is extended from the electrode pad 16, and the extended wiring is led to the inspection terminal 1 or 2. In the chip region, there are light emitting elements (hereinafter sometimes referred to as light emitting diodes) to which the electrode pads 16 and 49 are connected, but they are not shown. The same applies to FIG.
[0078]
The second embodiment is an example in which the inspection terminal (+) 1 and the inspection terminal (−) 2 are provided on different side edges of the insulating material as shown in FIG. ), The wiring 3b is extended from the electrode pad 49 formed in each chip region 24A, and the wiring 3a is extended from the electrode pad 16, and the extended wiring is led to the inspection terminal 1 or 2.
[0079]
These manufacturing steps will be described below, but the same steps (the steps before FIG. 2) as the manufacturing steps of the prior invention described above are omitted. In other words, the present embodiment will be described in the manufacturing process corresponding to the processes from FIG.
[0080]
That is, the state where the light emitting diode 22 manufactured through the steps of FIGS. 16 to 20 in the invention of the prior application is held on the adhesive layer 45 of the temporary holding member 43 by selective laser irradiation as shown in FIG. FIG. 2 shows.
[0081]
As shown in FIG. 2, the light emitting diode 22 is held by the adhesive layer 45 of the first temporary holding member 43, and the back surface of the light emitting diode 22 is on the n electrode side (cathode electrode side). It is removed and washed so that there is no resin (adhesive). An n-electrode pad 16 on the cathode side is formed on this surface, and a wiring 3a is further extended from this electrode pad 16 to an inspection terminal (not shown). Lead.
[0082]
Cleaning of the adhesive layer 45 is performed by etching the adhesive resin with, for example, oxygen plasma and irradiating with UV ozone as in the invention of the prior application (see FIG. 25). Moreover, when the GaN-based light emitting diode is peeled off from the first substrate 30 made of a sapphire substrate by laser, Ga is deposited on the peeled surface. Perform with nitric acid.
[0083]
The electrode pad on the cathode side can be about 60 μm square. The electrode pad 16 is made of a transparent electrode (ITO, ZnO, etc.) or a material such as Ti / Al / Pt / Au. Since the transparent electrode does not block the light emission of the light emitting diode, the patterning accuracy is rough, a large electrode can be formed, and the patterning process becomes easy
[0084]
After the extended wiring 3a is formed, this surface is bonded to the second temporary holding member 47 through the adhesive layer 48 as shown in FIG. Subsequently, as shown in FIG. 4, the first temporary holding member 43 on the opposite side surface is separated.
[0085]
FIG. 5 shows that the light emitting diode 22 is peeled off from the peeling layer 44 of the temporary holding member 43 and transferred to the second temporary holding member 47 to form a via hole 50 on the anode electrode (p electrode) side, and on the cathode side. The extended wiring 3a is exposed at the end of the second temporary holding member 47, and the inspection terminal (−) 2 is formed.
[0086]
Next, as shown in FIG. 6, an anode-side p-electrode pad 49 is formed on the via hole 50, and an extended wiring 3 b of the electrode pad 49 is further provided, which is connected to the end of the second temporary holding member 47. The inspection terminal (+) 1 is formed at this end.
[0087]
The light emitting diode 22 of the present embodiment performs each lighting inspection at this stage of the manufacturing process, and FIG. 7 shows this inspection state. That is, the inspection is performed by contacting the probing pad terminal 5a with one inspection terminal 1 and the probing terminal 5b with the other inspection terminal 2. Thereby, the light emitting diode 22 can be inspected for each line.
[0088]
As described above, FIG. 7 (corresponding to the section taken along line VII-VII in FIG. 1A) shows the first embodiment, while Embodiment 2 corresponds to FIG. 8 (corresponding to the section taken along line VIII-VIII in FIG. 1B). become that way.
[0089]
That is, in the second embodiment, the cathode-side n-electrode pad 16 is not formed in the step of FIG. 2 as in the above example, and the anode-side p-electrode pad 49 and its extended wiring 3b are formed in the step of FIG. Thereafter, as shown in FIG. 8A, the insulating material layer 10 is covered with the insulating material layer 10 except for the region of the inspection terminal 1 at the end of the insulating material layer 45, and the through hole 8 connected to the light emitting diode 22 is provided. Ni, Pt, Au, or the like is embedded in this to form a cathode-side n-electrode pad 16A, an extension wiring 3a is applied thereto, and an inspection terminal 2 is formed at the end thereof.
[0090]
As described above, in the second embodiment, the wirings extending from the respective electrode pads are provided in different layers, so that the positive and negative wirings are connected to each other at the wiring intersection 7 in FIG. 1B. Therefore, the light emitting diodes 22 can be individually inspected. However, even if the layers are not different from each other, the structure as shown in FIG.
[0091]
By these inspections, it is possible to collect information on luminance variations at the manufacturing stage of a three-color LED (light emitting diode) panel, obtain selection data for uniforming the luminance, and if it does not light during inspection By canceling the manufacturing, useless manufacturing processes such as subsequent bonding of the light emitting diode 22 can be omitted.
[0092]
FIG. 9 shows a state in which the second temporary holding member 47 is left and the element isolation groove 51 is provided by dicing in order to divide the light emitting diode 22 into each element, and FIGS. Dicing is performed along the dicing line 6 shown. Therefore, the extended wirings 3a and 3b are simultaneously cut by the dicing, and a special process for cutting the extended wirings 3a and 3b is not necessary. The second temporary holding member 47 is, for example, a so-called dicing sheet in which a UV adhesive material is applied to a plastic substrate, and a material whose adhesive strength decreases when UV is irradiated can be used.
[0093]
By this dicing process, the cured adhesive layer 45 is divided for each light emitting diode 22 to form resin chips 24A corresponding to the respective light emitting diodes 22 as shown in FIGS. 22 and 23, and the above-described extended wirings 3a and 3b. Are simultaneously cut, and the cut surface of the extended wiring is exposed at the end. The dicing process is performed by dicing using mechanical means or laser dicing using a laser beam, and when the cut width by dicing is required to be a narrow width of, for example, 20 μm or less, as in the prior invention, It is necessary to perform laser processing using a laser beam. As the laser beam, an excimer laser, an optical harmonic YAG laser, a carbon dioxide gas laser, or the like can be used.
[0094]
In the above process, the surface of the adhesive layer 45 is etched with oxygen plasma until the surface of the light emitting diode 22 is exposed, and the formation of the via hole 50 is also performed using an excimer laser, a harmonic YAG laser, a carbon dioxide gas laser, or the like. Good to do. At this time, the via hole has a diameter of about 3 to 7 μm. The anode side electrode pad is made of Ni, Pt or Au. In the dicing, for example, a groove having a width of about 40 μm is formed by an excimer laser to form the chip 24A.
[0095]
Next, as shown in FIG. 10, the resin chip 24 </ b> A in which the light emitting diode 22 is embedded is peeled from the second temporary holding member 47 using mechanical means. The release layer 48 on the second temporary holding member 47 can be formed using, for example, a fluorine coat, a silicone resin, a water-soluble adhesive (for example, PVA), polyimide, or the like. Then, for example, YAG third harmonic laser is irradiated from the back surface of the temporary holding member 47 on which the release layer 48 is formed. Thereby, for example, when polyimide is formed as the peeling layer 48, peeling occurs due to polyimide ablation at the interface between the polyimide and the quartz substrate, and each light emitting diode 22 is removed from the second temporary holding member 47 by the mechanical means. It can be easily peeled off.
[0096]
FIG. 10 is a diagram illustrating a state in which the light emitting diodes 22 arranged on the second temporary holding member 47 are picked up by the suction device 53. Since the suction holes 55 at this time are opened in a matrix at the pixel pitch of the image display device, a large number of light emitting diodes 22 can be sucked together. The opening diameter is, for example, about φ100 μm and is opened in a matrix shape with a pitch of 600 μm, and about 300 pieces can be adsorbed at a time.
[0097]
As the member of the suction hole 55, for example, a member produced by Ni electroforming or a member obtained by drilling a metal plate 52 such as stainless steel (SUS) is used. A suction chamber 54 is formed in the back of the suction hole 45 of the metal plate 52, and the light emitting diode 22 can be sucked by controlling the suction chamber 54 to a negative pressure. Since the light emitting diode 22 is covered with the adhesive layer 45 at this stage and the upper surface thereof is substantially flattened, selective adsorption by the adsorption device 53 can be easily advanced.
[0098]
FIG. 11 is a diagram illustrating a state where the light emitting diode 22 is transferred to the second substrate 60. When mounting on the second substrate 60, the adhesive layer 56 is applied to the second substrate 60 in advance, the adhesive layer 56 on the lower surface of the light emitting diode 22 is cured, and the light emitting diode 22 is fixed to the second substrate 60. To do. At the time of mounting, the suction chamber 54 of the suction device 53 is in a high pressure state, the coupling between the suction device 53 and the light emitting diode 22 is released, and the light emitting diode 22 is transferred to the second substrate 60 side. For the adhesive layer 56, a UV curable adhesive, a thermosetting adhesive, a thermoplastic adhesive, or the like can be used.
[0099]
The position where the light emitting diode 22 is arranged is a position separated from the arrangement on the temporary holding members 43 and 47. At that time, energy for curing the resin of the adhesive layer 56 is supplied from the back surface of the second substrate 60. In the case of a UV curable adhesive, only the lower surface of the light emitting diode 22 is cured with a laser in the case of a thermosetting adhesive, and in the case of a thermosetting adhesive, in the case of a thermoplastic adhesive, the adhesive is similarly applied by laser irradiation. Is melted and bonded.
[0100]
In addition, an electrode layer 57 that also functions as a shadow mask is provided on the second substrate 60, and a black chrome layer 58 is provided on the screen side of the electrode layer 57, that is, the surface on the side where a person viewing the display device is present. Form. As a result, the contrast of the image can be improved, and the energy absorption rate in the black chrome layer 58 can be increased, and the adhesive layer 56 can be cured quickly by the beam 73 that is selectively irradiated. The UV irradiation during the transfer is about 1000 mJ / cm in the case of a UV curable adhesive. ² It is better to irradiate.
[0101]
FIG. 12 is a view showing a state in which the light emitting diodes 22, 61, and 62 of three colors R, G, and B are arranged on the second substrate 60 and the insulating layer 59 is applied. In this case, if the above-described suction device 53 is used to mount the second substrate 60 by simply shifting the mounting position to the position of the color, pixels having three colors can be formed with the pixel pitch being constant. As the insulating layer 59, a transparent epoxy adhesive, a UV curable adhesive, polyimide, or the like can be used. The three color light emitting diodes 22, 61 and 62 do not necessarily have the same shape.
[0102]
In FIG. 12, the red light emitting diode 61 does not have a hexagonal pyramid GaN layer, and the shape of the red light emitting diode 61 is different from that of the other light emitting diodes 22 and 62. Although the resin-formed chip is covered with the resin 43, the same handling can be realized regardless of the difference in the element structure.
[0103]
Next, as shown in FIG. 13, corresponding to the electrode pads 16 and 49 of the light emitting diode 22 and the electrode layer 57 on the second substrate 60, an opening (via hole) 65, 66, 67, 68, 69 and 70 are formed, and wiring is further formed. The opening is also formed using a laser beam, for example.
[0104]
This opening (ie, via hole) increases the area of the electrode pads 16, 49 of the light emitting diodes 22, 61, 62, so that the via hole shape is large, and the positional accuracy of the via hole is also in the via hole directly formed in each light emitting diode. It can be formed with coarser accuracy. For example, the via hole having a diameter of about 20 μm can be formed for the electrode pads 16 and 49 of about 60 μm square. In addition, since there are three types of depths of via holes connected to the wiring substrate, connected to the anode electrode, and connected to the cathode electrode, the formation is controlled by, for example, the number of laser pulses, Open the optimum depth.
[0105]
After the openings 65, 66, 67, 68, 69, 70 are formed in the insulating layer 59, the anode and cathode electrode pads of the light emitting diodes 16, 61, 62 and the wiring electrode layer 57 of the second substrate 60 are connected. Wiring 63, 64, 71 to be formed is formed. Thereafter, a protective layer is formed on the wiring, and the panel of the image display device is completed. As this insulating layer 59, a material such as a transparent epoxy adhesive can be used as in the insulating layer 59 in FIG. This protective layer is heat-cured to completely cover the wiring. As a result, each light-emitting diode 22 is inspected for lighting before commercialization, so that the driver IC is connected to the wiring at the end of the panel incorporating the good light-emitting diode 22. It can be connected to produce a good drive panel.
[0106]
FIG. 14 shows an example of the second embodiment, which is a case of the light-emitting diode 22 in which the lighting inspection (see FIG. 8) is performed by providing the positive electrode and the negative electrode of the inspection terminal on different side edges of the insulating material. 13 is partially different. That is, in the manufacturing process similar to the above based on the configuration as shown in FIG. 8, the insulating layer 59 is further provided on the insulating layer 10 in FIG. The electrode pad 16A is covered, and the electrode 16A is drawn out through the through hole 11 and connected to the wiring 71, but functions in the same manner as in FIG.
[0107]
By the method for arranging the light emitting elements as described above, the distance between the elements is already increased at the time when the light emitting diode 22 is held by the temporary holding member 43 in the same manner as the invention of the prior application, and the widened interval is utilized. It is possible to provide electrode pads 16 and 49 having a relatively large size. Since wiring using these relatively large electrode pads 16 and 49 is performed, wiring can be easily formed even when the final device size is significantly larger than the element size.
[0108]
Further, in the light emitting element arrangement method of the present embodiment, the periphery of the light emitting diode 22 is covered with the cured adhesive layer 45, and the electrode pads 16 and 49 can be formed with high precision by flattening, and is wider than the element. The electrode pads 16 and 49 can be extended in the region, and handling is facilitated when the transfer in the next second transfer step is advanced by a suction jig.
[0109]
According to the present embodiment, the extended wirings 3a and 3b are provided in the anode-side and cathode-side wirings 16 and 49 at the manufacturing stage of the light-emitting diode 22, and these are led to the inspection terminals 1 and 2 before being commercialized. Since lighting inspection can be performed, information on the luminance variation of each LED can be collected before making a three-color LED panel, and it can be used as LED selection data to make a uniform luminance screen, and if it does not turn on, it can be manufactured Then, the defective product can omit a subsequent useless process such as bonding. Further, since the extended wiring is cut at the same time in the subsequent essential dicing process, no special process is required.
[0110]
The above-described embodiment of the present invention can be modified based on the technical idea of the present invention.
[0111]
For example, the circuit element of the embodiment is an example of a light emitting diode, but in addition to that, a liquid crystal control element, a photoelectric conversion element, a piezoelectric element, a thin film transistor element, a thin film diode element, a semiconductor laser, a resistance element, a switching element, a micro magnetism The present invention can also be applied to elements, micro optical elements, and the like. Also, the size of the element 22 may be other than the embodiment.
[0112]
Further, the shapes and installation locations of the inspection terminals 1 and 2, the wiring extension method, the laminated structure, the manufacturing process, and the like can also be appropriately implemented other than the embodiment.
[0113]
[Effects of the invention]
As described above, the circuit element inspection method and the inspection structure thereof, the circuit element built-in substrate and the manufacturing method thereof, and the electric circuit device and the manufacturing method thereof according to the present invention include the circuit element embedded in an insulating material. The wiring connected to the electrodes is extended to the inspection terminal and inspected through this inspection terminal. By performing this inspection in the state of a semi-finished product, the characteristics of circuit elements can be Information can be obtained, and circuit elements with uniform characteristics can be selected.
[Brief description of the drawings]
FIGS. 1A and 1B are schematic views showing an example of forming an inspection terminal according to an embodiment of the present invention, where FIG. 1A is Embodiment 1 and FIG. 1B is Embodiment 2. FIGS.
FIG. 2 is a schematic diagram showing one process of manufacturing a circuit element built-in substrate according to the first embodiment.
FIG. 3 is a schematic view showing another step of the manufacturing process of the circuit element built-in substrate according to the first embodiment;
4 is a schematic view showing another process of the manufacturing process of the circuit element built-in substrate according to the first embodiment. FIG.
FIG. 5 is a schematic view showing another process of the circuit element built-in substrate according to the first embodiment.
FIG. 6 is a schematic view showing another process of manufacturing the circuit element built-in substrate according to the first embodiment.
FIG. 7 is a schematic view showing another process of manufacturing the circuit element built-in substrate according to the first embodiment.
FIG. 8 is a schematic diagram showing one process of manufacturing a circuit element built-in substrate according to the second embodiment.
FIG. 9 is a schematic diagram showing one process of manufacturing a circuit element built-in substrate according to the first embodiment.
FIG. 10 is a schematic diagram showing one process of manufacturing a circuit element built-in substrate according to the first embodiment.
FIG. 11 is a schematic diagram showing one process of manufacturing the electric circuit device according to the first embodiment.
FIG. 12 is a schematic diagram showing another step of the manufacturing process of the electric circuit device according to the first embodiment.
FIG. 13 is a schematic diagram showing still another process of the manufacturing process of the electric circuit device according to the first embodiment.
FIG. 14 is a schematic view showing one process of manufacturing an electric circuit device according to the second embodiment.
FIG. 15 is a schematic view showing one process of manufacturing a circuit element built-in substrate according to the invention of the prior application.
FIG. 16 is a schematic view showing another process of manufacturing the circuit element built-in substrate.
FIG. 17 is a schematic view showing another process of manufacturing the circuit element built-in substrate.
FIG. 18 is a schematic view showing another process of manufacturing the circuit element built-in substrate.
FIG. 19 is a schematic view showing another process of manufacturing the circuit element built-in substrate.
20 is an enlarged view of a part of FIG.
FIG. 21 is a detailed view of FIG. 20, in which (a) is a partial cross-sectional view and (b) is a plan view.
FIG. 22 is a perspective view schematically showing a state in a manufacturing stage of the circuit element built-in substrate according to the prior application invention.
FIG. 23 is a plan view of FIG. 22;
FIG. 24 is a schematic view showing one process of manufacturing a circuit element built-in substrate according to the prior invention.
FIG. 25 is a schematic view showing one process of manufacturing a circuit element built-in substrate according to the prior invention.
FIG. 26 is a schematic diagram showing one process of manufacturing a circuit element built-in substrate according to the prior invention.
FIG. 27 is a schematic view showing one process of manufacturing a circuit element built-in substrate according to the prior invention.
FIG. 28 is a schematic view showing one process of manufacturing a circuit element built-in substrate according to the prior invention.
FIG. 29 is a schematic diagram showing one process of manufacturing a circuit element built-in substrate according to the invention of the prior application.
FIG. 30 is a schematic view showing still another process of manufacturing a circuit element built-in substrate according to the invention of the prior application.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Inspection terminal (+), 2 ... Inspection terminal (-), 3a, 3b ... Extension wiring,
5a, 5b ... probing terminals, 6 ... dicing lines, 7 ... intersections,
8, 11 ... through hole, 9 ... wiring,
10, 45, 48 ... adhesive layer (insulating material layer),
16, 16A, 26, 27, 49 ... electrode pads,
22, 61, 62 ... element (light emitting diode), 23 ... resin,
24, 24A ... resin chip, 30 ... sapphire substrate (first substrate),
31, 33 ... GaN layer, 32 ... mask, 34 ... InGaN layer,
35 ... MaGaN layer, 37p electrode, 42g ... groove, 43 ... first holding member,
44 ... peeling layer, 45s ... cured region, 45y ... uncured region,
46, 73 ... laser light, 47 ... second holding member, 53 ... suction device,
59 ... Insulating layer, 60 ... Second substrate

Claims (18)

When manufacturing a circuit element built-in substrate,
Embedding a circuit element in an insulating material;
Bonding the insulating material surface opposite to the embedded surface of the circuit element to the first holding member;
After separating the insulating material in which the circuit element is embedded from the first holding member, providing a wiring for taking out one electrode of the circuit element and extending the wiring to one inspection terminal When,
A method of manufacturing a circuit element-embedded substrate, comprising: providing a wiring for extraction on the other electrode of the circuit element, and extending the wiring to the other inspection terminal. On the insulating material, a wiring for taking out one electrode of the circuit element is provided on the surface on which the circuit element is embedded, and a wiring for taking out the other electrode of the circuit element is provided on the other surface. The method of manufacturing a circuit element built-in substrate according to claim 1 , wherein these lead-out wirings are extended to the inspection terminal at the end of the insulating material. The method for manufacturing a circuit element built-in substrate according to claim 1 , wherein a positive electrode and a negative electrode of the inspection terminal are provided on the same side edge of the insulating material. The method for manufacturing a circuit element built-in substrate according to claim 1 , wherein a positive electrode and a negative electrode of the inspection terminal are provided on different side edges of the insulating material. The method for manufacturing a circuit element built-in substrate according to claim 3 , wherein the wiring connected to the one electrode and the wiring connected to the other electrode are provided on the same insulating material. 5. The circuit element-embedded substrate according to claim 4 , wherein an insulating layer is formed on the wiring connected to the one electrode and the wiring connected to the other electrode, and the inspection terminal is provided on the insulating layer. Method. Transferred from the substrate, it said obtaining the circuit element which is embedded in the insulating material, the manufacturing method of the circuit device embedded board according to claim 1. The method for manufacturing a circuit element built-in substrate according to claim 7 , wherein the insulating material in which the circuit element is embedded is held on the base body before the transfer. When manufacturing electrical circuit devices,
A process of obtaining a circuit element-embedded substrate by the manufacturing method according to any one of claims 1 to 8 ;
Inspecting the characteristics of the circuit element via the inspection terminal;
After the inspection, the step of cutting between the electrode and the inspection terminal to chip the insulating material embedded with the circuit element;
Fixing the chip to the printed circuit board;
Connecting the wiring to the printed circuit board. The method for manufacturing an electric circuit device according to claim 9 , wherein the inspection terminal is inspected by contacting a probing terminal. The method for manufacturing an electric circuit device according to claim 9 , wherein after the inspection, the insulating material in which the circuit element is embedded is formed into a chip by cutting between the electrode and the inspection terminal. The method for manufacturing an electric circuit device according to claim 9 , wherein a positive electrode and a negative electrode of the inspection terminal are provided on the same side edge of the insulating material. The method for manufacturing an electric circuit device according to claim 9 , wherein a positive electrode and a negative electrode of the inspection terminal are respectively provided on different side edges of the insulating material. The method for manufacturing an electric circuit device according to claim 9 , wherein the characteristics of the circuit element transferred from a base and embedded in the insulating material are inspected. The method of manufacturing an electric circuit device according to claim 14 , wherein the insulating material in which the circuit element is embedded is held on the base body before the transfer. The method for manufacturing an electric circuit device according to claim 9 , wherein characteristics of the circuit element are inspected for each line and / or individually. The method for manufacturing an electric circuit device according to claim 9 , wherein the circuit element is a light emitting element, and a lighting inspection of the light emitting element is performed. The method for manufacturing an electric circuit device according to claim 9 , wherein the image display device or the light source device is manufactured.

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