CN106876562A - A kind of new micro LED structure and preparation method thereof - Google Patents
A kind of new micro LED structure and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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Abstract
The present invention relates to a kind of new micro LED structure and preparation method thereof.The new micro LED structure includes micro blue-light LED chip and light conversion film；The light conversion film is covered in the micro blue-light LED chip surface；The light conversion film contains red and green luminescent material.The preparation method of the new micro LED structure is comprised the following steps：Red and green luminescent material is coated on transparency carrier, light conversion film is obtained；The blue-light LED chip that epitaxy is completed is transferred on thin film transistor-driven face plate, micro blue-light LED chip is obtained；The light conversion film is covered in the micro blue-light LED chip surface again, and is packaged.The present invention is when the full-color displays of micro LED are realized, only need to be by epitaxial layer ultra-blue-light micro LED chip is from strippable substrate and is transferred in TFT driving panels, and without being shifted on a large scale to red and green micro LED chip again, the processing procedure for greatly reducing the full-color displays of micro LED is difficult.
Description
Technical field
The present invention relates to LED field, more particularly to a kind of new micro LED structure and preparation method thereof.
Background technology
The micro technology of LED, refers to small size LED gusts of the integrated highdensity micron level on a driving chip
Row, its pixel is down to micron level from present millimeter rank.Compared to now traditional LED, micro LED resolutions are significantly
Improve, the features such as with high efficiency, high brightness, fast response time and energy-conservation, while self-luminous is still belonged to without backlight,
The aspect such as flexibility, frivolous has broad application prospects.
But present LED making technologies are on sapphire substrate, to be grown by the method for metallochemistry vapour deposition
One layer of epitaxial layer, and display module and drive circuit are based on large-area glass substrate, therefore to realize that LED's is aobvious
Show application, it is necessary to first LED epitaxial growth layer luminescent material is successfully stripped out from sapphire substrate, glass base is then transferred to
On plate.For traditional LED processing procedures, because single LEDs chip is larger, such making technology is feasible, but right
In micro LED chip, because single chip only has micron order size, therefore how on a large scale, with high accuracy realize micron
The successful transfer of level LED chip is the key that micro LED technology is realized, in the field difficulty for pursuing high accuracy display product more
Greatly.Especially, for monochromatic micro LED array, can encapsulate laminating by disposable transfer or inverted structure is
Be capable of achieving, and if full-color display need to be realized, need by several times carry out the transfer of red, green, blue three-color LED micron order chip to realize figure
Case.This light efficiency to micron order chip, consistent wavelength and extensive transfer success rate all propose requirement higher, difficulty
It is bigger, and this has become the bottleneck of restriction micro LED industry development.
The content of the invention
Based on this, it is an object of the present invention to provide a kind of new micro LED structure and preparation method thereof, reduces
Existing micro LED realizes that the processing procedure of full-color display is difficult.
The purpose of the present invention is achieved through the following technical solutions：
A kind of new micro LED structure, including micro blue-light LED chip and light conversion film；The light conversion film covers
It is placed on the micro blue-light LED chip surface；The light conversion film contains red and green luminescent material.
It is of the invention with micro blue-light LED chip as self-emissive light source relative to prior art, and as excitation light
Source, the red and green micro LED for needing to shift successively is substituted using the light conversion film containing red and green luminescent material
Chip；The light conversion film launches feux rouges and green glow by absorbing the blue light that micro blue-light LED chip sends；Finally, do not inhaled
The some blue light of receipts mixes with the feux rouges and green glow that are sent through light conversion film conversion, forms full-color active light emissive display pixel point
Battle array, you can realize the full-color display of micro LED.
Further, described red and green luminescent material is II-VI or III-V race's quantum dot, or perovskite quantum dot.Amount
The energy level of son point is discrete, and when being excited by the external world, electronics transition between these energy levels will send the light of specific wavelength.
Further, the red light-emitting wavelength of the red and green luminescent material is 610~650nm, green luminescence wavelength
It is 510~550nm.Existing blue-ray LED emission wavelength is generally 450~470nm, thus set red light-emitting wavelength be 610~
650nm, green luminescence wavelength is 510~550nm, and to cause in these wave-length coverages, the mixture of colours of red, green, blue three can be obtained
The good white light of display effect.
Further, the size range of the micro blue-light LED chip is 2~20 μm.If micro blue-light LED chip
Oversized, resolution can decrease；If micro blue-light LED chip is undersized, it will increase the difficulty of chip transfer
Degree and cost, so as to influence large-area applications.
A kind of preparation method of new micro LED structure, comprises the following steps：
S1：Red and green luminescent material is coated on transparency carrier, light conversion film is obtained；
S2：The blue-light LED chip that epitaxy is completed is transferred in thin film transistor (TFT) (TFT) driving panel, micro is obtained
Blue-light LED chip；
S3：The light conversion film is covered in the micro blue-light LED chip surface, and is packaged, be obtained described
New micro LED structure.
Relative to prior art, the present invention accurately coats on the transparent substrate red and green luminescent material, and formation contains
Have the light conversion film of red and green pixel point, by accurate corresponding ultra-blue-light micro LED excite it is corresponding red and
Green luminescent material display pixel dot matrix, so as to send feux rouges and green glow.When realizing that the full-color patternings of micro LED show,
Only need to be by epitaxial layer ultra-blue-light micro LED chip is from strippable substrate and is transferred in TFT driving panels, and need not again
Red and green micro LED chip is shifted on a large scale, the processing procedure for greatly reducing the full-color displays of micro LED is stranded
It is difficult.Additionally, transparency carrier separates the light conversion film containing red and green pixel point with blue light micro LED, it is to avoid send out
Luminescent material and the directly contact of blue light micro LED, greatly reduce corrosion function of the high energy blue light to luminescent material, beneficial to product
The lifting of product service life.
Further, in the step S1, will be red and green by way of photoetching, registering, silk-screen printing or inkjet printing
Color luminescent material is coated on transparency carrier, forms red and green pixel point the light conversion film of display.
Further, in the step S2, the blue-light LED chip that epitaxy is completed is cut into micron order blue-ray LED core first
Piece, then single of the micron order blue-light LED chip or scale are transferred in TFT driving panels, form display blue pixel point
Micro blue-light LED chip.
Further, in the step S2, the blue-light LED chip for first completing epitaxy passes through either physically or chemically from base
Plate is peeled off, and recycles the method for inductively coupled plasma etching that the blue-light LED chip is cut into micron order blue-ray LED core
, be bonded in the micron order blue-light LED chip in TFT driving panels again finally by piece, forms the micro of display blue pixel point
Blue-light LED chip.
Further, in the step S3, the red and green pixel point on light conversion film is corresponded precisely into microization blue
The blue pixel point that light LED chip shows.Micro blue-light LED chip is corresponded with red and green pixel point, by micro-
The blue light that contractingization blue-light LED chip sends excites accurate corresponding red and green pixel point, sends feux rouges and green glow, improves aobvious
Show precision.
Further, in the step S3, using the one kind in silica gel, polyurethane resin, polyacrylic resin, polyester resin
Or several be packaged.After encapsulation, it is possible to decrease the erosion of environment reclaimed water, oxygen to red and green light luminescent material, material is lifted
Stability and device service life.
In order to more fully understand and implement, the invention will now be described in detail with reference to the accompanying drawings.
Brief description of the drawings
Fig. 1 is the schematic diagram of new micro LED structure of the invention.
Fig. 2 is the process schematic representation that light conversion film is realized based on inkjet technology of the invention.
Specific embodiment
For existing micro LED technology it is full-color show face how on a large scale, pinpoint accuracy realize red, green, blue
The problem of the successful transfer of three color micron order LED chips, inventor has found by studying, using containing red and green emitting material
The light conversion film of material substitutes red and green micron order LED chip, can avoid the big rule of red and green micro LED chip
Mould is shifted, and need to only carry out the transfer of ultra-blue-light micro LED chip, and excites it to contain red and green luminescent material
Light conversion film producing feux rouges and green glow, you can realize the full-color display of micro LED.Based on the studies above, further obtain
Obtained a kind of new micromation LED structure and preparation method thereof.It is described in detail by embodiment individually below.
Embodiment 1
Fig. 1 is referred to, it is the schematic diagram of new micro LED structure of the invention.The new micro LED structure bag
Include light conversion film 102 and micro blue-light LED chip 103；The upper surface of the light conversion film 102 carries red and green pixel
Point 101；Accurately correspondence is covered in the surface of micro blue-light LED chip 103 to the red and green pixel point 101；The micro
Change blue-light LED chip 103 to be located in TFT driving panels 104.
After energization, micro blue-light LED chip 103 is controlled to light by TFT driving panels 104, micro blue-light LED chip
103 send blue light, and excitated red and green pixel point 101, obtain feux rouges and green glow, then the feux rouges and green glow and micro
The remaining blue light that blue-light LED chip 103 sends, realizes the full-color display of color of red, green, blue three.
The light conversion film 102 can be obtained by technical matters such as photoetching, registering, silk-screen printing, inkjet printings.To spray
As a example by black printing technique, Fig. 2 is referred to, it is the technique signal that light conversion film is realized based on inkjet technology of the invention
Figure.Specifically, by spraying or ink-jet apparatus 201 by the red and precise Printing of green luminescent material pixel 202 in transparent base
The surface of material 203, forms a kind of red and green light conversion film of patterning that can be used for micro LED.Formed on the transparent substrate
After high-precision red and green luminescent material display pixel point, micro blue light is covered in by this transparency carrier is high-precision
On LED chip, red and green light conversion film is obtained, and without being carried out on a large scale to red and green micro LED chip again
Transfer.
It is of the invention with micro blue-light LED chip as self-emissive light source relative to prior art, and as excitation light
Source, the red and green micron order for needing to shift successively is substituted using the light conversion film containing red and green luminescent material
Micro LED chips；The light conversion film launches feux rouges and green glow by absorbing the blue light that micro blue-light LED chip sends；Most
Afterwards, unabsorbed some blue light mixes with the feux rouges and green glow that are sent through light conversion film conversion, forms full-color active light emissive
Display pixel dot matrix, you can realize the full-color display of micro LED.
Embodiment 2
The preparation method of new micro LED structure of the invention, comprises the following steps：
(1) red and green luminescent material is coated on transparency carrier, light conversion film is obtained.
In the present embodiment, red and green luminescent material is II-VI or III-V race's quantum dot, preferably CdSe types quantum
Point.The emission wavelength of wherein red quantum dot is preferably 625nm；The emission wavelength of green quantum dot is preferably 525nm.
Red and green quantum dot is dissolved in the mixed solution of toluene and dichloro-benzenes respectively, wherein toluene and dichloro-benzenes
Volume ratio is 1:1, mass fraction of the quantum dot in mixed solution is 1%；A certain amount of photoresist is added, is made into and is met light
The red and green quantum dispensing water formula of carving technology；The skill that the red and green quantum dispensing water for completing passes through photoetching will be prepared
Art technique, on the transparent substrate according to red, green alternate mode, is lithographically formed accurate red and green pixel point dot matrix knot
Structure, the preferred size of pixel is 5 μm, so as to obtain the red and green light conversion film based on quantum dot.
(2) blue-light LED chip that epitaxy is completed is transferred on thin film transistor-driven face plate, micro blue light is obtained
LED chip.
The present embodiment uses flood tide transfer techniques, the blue-ray LED wafer layer for first completing epitaxy, by physically or chemically
Method is peeled off from wafer substrate, obtains single light-emitting film layer；Recycle inductively coupled plasma etching method by this
Light-emitting film layer is accurate to cut into micron order blue-light LED chip, and preferably size is 5 μm；Finally by the blue-ray LED core of this micro
Piece transfer is connected on TFT drive circuit boards, forms blue display pixels.
(3) light conversion film is covered in the micro blue-light LED chip surface, and is packaged, be obtained described
New micro LED structure.
In the present embodiment, the light conversion film containing accurate red and green pixel point that photoetching is completed accurately is covered in
Micro blue-light LED chip surface, makes each micro blue-light LED chip be corresponded with red and green pixel point, passes through
Micro blue-light LED chip excites corresponding red and green pixel point；Finally it is packaged using silica gel, is formed and be based on quantum
The micro LED structure of the full-color display of color of red, green, blue three of point.
Embodiment 3
The preparation method of new micro LED of the invention, comprises the following steps：
(1) red and green luminescent material is coated on transparency carrier, light conversion film is obtained.
In the present embodiment, red and green luminescent material is perovskite quantum dot.The perovskite quantum-dot structure formula is
APbX3, wherein, A=Cs, CH3NH3；X=Cl, Br or I, red perovskite quantum dot are preferably CsPbI3Quantum dot, green calcium
Titanium ore quantum dot is preferably CsPbBr3Quantum dot.The emission wavelength of red quantum dot is preferably 625nm；The hair of green quantum dot
Optical wavelength is preferably 525nm.
Red and green quantum dot is dissolved in the mixed solution of toluene, butanol, chlorobenzene respectively, wherein toluene, butanol, chlorine
The volume ratio of benzene is 2:1:2, mass fraction of the quantum dot in mixed solution is 1%；A certain amount of photoresist is added, is made into
Meet the red and green quantum dispensing water formula of photoetching process；The red and green quantum dispensing water for completing will be prepared and pass through light
The technical matters at quarter, on the transparent substrate according to red, green alternate mode, is lithographically formed accurate red and green pixel point point
Battle array structure, the preferred size of pixel is 5 μm, so as to obtain the red and green light conversion film based on quantum dot.
(2) blue-light LED chip that epitaxy is completed is transferred on thin film transistor-driven face plate, micro blue light is obtained
LED chip.
The present embodiment uses flood tide transfer techniques, the blue-ray LED wafer layer for first completing epitaxy, by physically or chemically
Method is peeled off from wafer substrate, obtains single light-emitting film layer；Recycle inductively coupled plasma etching method by this
Light-emitting film layer is accurate to cut into micron order blue-light LED chip, and preferably size is 5 μm；Finally by the blue-ray LED core of this micro
Piece transfer is connected on TFT drive circuit boards, forms blue display pixels.
(3) light conversion film is covered in the micro blue-light LED chip surface, and is packaged, be obtained described
New micro LED structure.
In the present embodiment, the light conversion film containing accurate red and green pixel point that photoetching is completed accurately is covered in
Micro blue-light LED chip surface, makes each micro blue-light LED chip be corresponded with red and green pixel point, passes through
Micro blue-light LED chip excites corresponding red and green pixel point；Finally it is packaged using silica gel, is formed and be based on quantum
The micro LED structure of the full-color display of color of red, green, blue three of point.
Embodiment 4
The preparation method of new micro LED of the invention, comprises the following steps：
(1) red and green luminescent material is coated on transparency carrier, light conversion film is obtained.
In the present embodiment, red and green luminescent material is II-VI or III-V race's quantum dot, preferably CdSe types quantum
Point.The emission wavelength of wherein red quantum dot is preferably 625nm；The emission wavelength of green quantum dot is preferably 525nm.
Red and green quantum dot is dissolved in the mixed solution of toluene and dichloro-benzenes respectively, wherein toluene and dichloro-benzenes
Volume ratio is 1:1, mass fraction of the quantum dot in mixed solution is 1%；A certain amount of photoresist is added, is made into and is met light
The red and green quantum dispensing water formula of carving technology；The skill that the red and green quantum dispensing water for completing passes through photoetching will be prepared
Art technique, on the transparent substrate according to red, green alternate mode, is lithographically formed accurate red and green pixel point dot matrix knot
Structure, the preferred size of pixel is 5 μm, so as to obtain the red and green light conversion film based on quantum dot.
(2) blue-light LED chip that epitaxy is completed is transferred on thin film transistor-driven face plate, micro blue light is obtained
LED chip.
The present embodiment uses chip bonding technique, and the blue-light LED chip that epitaxy is completed is cut into required size first
Micro blue-light LED chip, preferably size are 10 μm；The micro blue-light LED chip is disposably transferred to TFT again and drives base
On plate, blue display pixels are formed.
(3) light conversion film is covered in the micro blue-light LED chip surface, and is packaged, be obtained described
New micro LED structure.
In the present embodiment, the light conversion film containing accurate red and green pixel point that photoetching is completed accurately is covered in
Micro blue-light LED chip surface, makes each micro blue-light LED chip be corresponded with red and green pixel point, passes through
Micro blue-light LED chip excites corresponding red and green pixel point；Finally it is packaged using silica gel, is formed and be based on quantum
The micro LED structure of the full-color display of color of red, green, blue three of point.
Relative to prior art, the present invention accurately coats on the transparent substrate red and green luminescent material, and formation contains
Have the light conversion film of red and green pixel point, by accurate corresponding ultra-blue-light micro LED excite it is corresponding red and
Green luminescent material display pixel dot matrix, so as to send feux rouges and green glow.When realizing that the full-color patternings of micro LED show,
Only need to be by epitaxial layer ultra-blue-light micro LED chip is from strippable substrate and is transferred in TFT driving panels, and need not again
Red and green micro LED chip is shifted on a large scale, the processing procedure for greatly reducing the full-color displays of micro LED is stranded
It is difficult.Additionally, transparency carrier separates the light conversion film containing red and green pixel point with blue light micro LED, it is to avoid send out
Luminescent material and the directly contact of micro LED, greatly reduce corrosion function of the high energy blue light to luminescent material, make beneficial to product
With the lifting in life-span.
Embodiment described above only expresses several embodiments of the invention, and its description is more specific and detailed, but simultaneously
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that coming for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Scope.
Claims (10)
1. a kind of new micro LED structure, it is characterised in that：Including micro blue-light LED chip and light conversion film；The light
Conversion film is covered in the micro blue-light LED chip surface；The light conversion film contains red and green luminescent material.
2. new micro LED structure according to claim 1, it is characterised in that：The red and green luminescent material
It is II-VI or III-V race's quantum dot, or perovskite quantum dot.
3. new micro LED structure according to claim 2, it is characterised in that：The red and green luminescent material
Red light-emitting wavelength for 610~650nm, green luminescence wavelength be 510~550nm.
4. new micro LED structure according to claim 3, it is characterised in that：The micro blue-light LED chip
Size range is 2~20 μm.
5. a kind of preparation method of new micro LED structure, it is characterised in that：Comprise the following steps：
S1：Red and green luminescent material is coated on transparency carrier, light conversion film is obtained；
S2：The blue-light LED chip that epitaxy is completed is transferred on thin film transistor-driven face plate, micro blue-ray LED core is obtained
Piece；
S3：The light conversion film is covered in the micro blue-light LED chip surface, and is packaged, be obtained described new
Micro LED structure.
6. the preparation method of new micro LED structure according to claim 5, it is characterised in that：In the step S1,
Red and green luminescent material is coated on transparency carrier by way of photoetching, registering, silk-screen printing or inkjet printing, shape
The light conversion film of red and green pixel point into display.
7. the preparation method of new micro LED structure according to claim 6, it is characterised in that：In the step S2,
The blue-light LED chip that epitaxy is completed is cut into micron order blue-light LED chip first, then by the micron order blue-light LED chip list
Or scale be transferred on thin film transistor-driven face plate, formed display blue pixel point micro blue-light LED chip.
8. the preparation method of new micro LED structure according to claim 6, it is characterised in that：In the step S2,
Epitaxy is completed blue-light LED chip first is by either physically or chemically from strippable substrate, recycling inductive couple plasma
The blue-light LED chip is cut into micron order blue-light LED chip by the method for body etching, finally again by the micron order blue-ray LED core
Piece is bonded on thin film transistor-driven face plate, forms the micro blue-light LED chip of display blue pixel point.
9. the preparation method of the new micro LED structure according to claim 7 or 8, it is characterised in that：The step S3
In, the red and green pixel point on light conversion film is corresponded precisely into the blue pixel point that micro blue-light LED chip shows.
10. the preparation method of new micro LED structure according to claim 9, it is characterised in that：The step S3
In, it is packaged using one or more in silica gel, polyurethane resin, polyacrylic resin, polyester resin.
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