CN103840042A - Method for manufacturing LED display screen - Google Patents
Method for manufacturing LED display screen Download PDFInfo
- Publication number
- CN103840042A CN103840042A CN201310673129.4A CN201310673129A CN103840042A CN 103840042 A CN103840042 A CN 103840042A CN 201310673129 A CN201310673129 A CN 201310673129A CN 103840042 A CN103840042 A CN 103840042A
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- led
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- led display
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The invention discloses a method for manufacturing an LED display screen. The method comprises the steps that LED chips in the wave band of light waves with the same color are manufactured on the same LED wafer, wherein the light emitting wave length is equal to the natural color wave length of light waves emitted by the LED chips, and the length of a light wave with the natural color is smaller than or equal to the minimum wave length of a pixel with the primary color; sapphire substrate stripping is carried out on the LED chips; a color conversion layer is built on a stripped light-emitting surface to achieve wave length color conversion, a pixel array can be formed by the LED chips, and each LED chip corresponds to one primary color in a primary color set of the pixel where the LED chip is located; transparent substrates are added to the LED chips which are processed through wave length conversion; chip split is carried out in a chip set mode, wherein the chip set comprises two or more LED chips; the LED chip set or single chips are placed on pixel preset positions on a substrate, and the LED display screen is manufactured. The manufacturing cost of the high-density LED display screen is reduced, and influence of infiltration among the chips in the process of inverted installation of the LED chips can be effectively eliminated, so that the display effect is optimized.
Description
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Technical field
The present invention relates to LED Display Technique field, more specifically, relate to a kind of LED display manufacture method.
Background technology
LED Display Technique is development in recent years one of Display Technique more fast.LED display has high brightness, high efficiency, long-life, beautiful in colour, the active advantage such as luminous, and indoors outer display application occasion plays an important role.Along with the raising of making technology, LED display, constantly toward high display density high-resolution future development, is subject to the favor of some high-end professional demonstration field application gradually.But LED display cost is very expensive, its manufacturing cost is directly proportional to resolution and the reticular density of display, when display screen dot array density reaches below 3mm, every square metre of pixel will reach even up to a million of hundreds of thousands, holistic cost is relatively high, and this is also a key factor of restriction high density high-resolution LED display development.Therefore the material cost and the equipment that, how to reduce each LED pixel are equally shared by all an important topic that becomes current LED demonstration manufacture.
Exist at present many methods to reduce LED and show the cost of making, " a kind of light emitting diode (LED) display screen, and manufacture method " that for example number of patent application is CN201210252371.X discloses a kind of LED chip " group is grabbed " technology.Its specific implementation process: on the LED of Same Wavelength wafer (WAFER), carry out light wave color conversion, make the LED chip on wafer form pel array, and a concentrated primary colors of primary colors of corresponding its place pixel of each LED chip; LED chip on wafer is carried out to sliver in the mode of chipset (being more than or equal to two LED chips); Finally chipset or one single chip are placed on to the precalculated position of each pixel on substrate, as shown in Figure 1, adopt the method can effectively reduce production cost, improved production efficiency simultaneously.But there is certain deficiency in this scheme: 1. in forward LED process, implemented the color conversion technology such as painting fluorescent material due to LED chip, can in the time of bonding wire, affect being connected of LED chip electrode and gold thread, the reliability of reduction LED lamp pearl.As shown in Figure 2, A is electrode, and B is light-emitting area.If 2. LED is carried out to reverse installation process, as shown in Figure 3,11 is color converting layer, 12 is Sapphire Substrate, 13 is luminescent layer, and 14 is substrate, because color conversion is placed on Sapphire Substrate, can cause the profit of invading between chip and chip, affect the display effect of LED display module, as shown in Figure 4,12 is Sapphire Substrate, 14 is substrate, and 15 is silica-based.
Summary of the invention
In order to overcome above-mentioned the deficiencies in the prior art, the present invention propose a kind of while solving LED chip upside-down mounting chip light wave infiltrate the LED display manufacture method of problem.
To achieve these goals, technical scheme of the present invention is:
A kind of LED display manufacture method, described LED display comprises the pel array on substrate, substrate, and each pixel packets of pel array is containing the two or more LED chips that are fixed on substrate, and described LED chip is flip-chip packaged; Described manufacture method comprises the following steps:
S1. on same LED wafer, make the LED chip of same color light-wave band, described emission wavelength is the true qualities wavelength that LED chip sends light wave, and the light wave of described true qualities is less than or equal to wavelength minimum in the primary colors of pixel;
S2. adopting substrate desquamation method to carry out Sapphire Substrate to LED chip peels off;
S3. set up color converting layer peeling off light-emitting area, carry out wavelength color conversion to realize, make LED chip form pel array, the primary colors that the primary colors of corresponding its place pixel of each LED chip is concentrated;
S4. on the LED chip after wavelength conversion, add transparent substrates; Mode with chipset is carried out sliver, and said chip group comprises two or more LED chips;
S5. LED chip group or one single chip are positioned over to each pixel precalculated position on substrate, make LED display.
Adopt the light-emitting area of the LED chip of encapsulation in the method making LED display upward, the electric of chip faces down, and mounted facing to substrate by electrode district, can save this operation of bonding wire compared to formal dress technique, cost-saving, improves encapsulating products reliability.The present invention first peels off out by Sapphire Substrate, then sets up color converting layer, then on color converting layer, adds transparent substrates.Sapphire Substrate is peeled off out in advance, can effectively solve chip light wave and infiltrate problem.
Compared with prior art, beneficial effect of the present invention is: the present invention is in utilizing " group is grabbed technology " to reduce highly dense LED display manufacturing cost, and can effectively solve LED chip upside-down mounting time, chip chamber is invaded profit impact, to optimize display effect.
Accompanying drawing explanation
Fig. 1 is the existing flow chart of making LED display with " group is grabbed technology ".
Fig. 2 is bipolarity LED chip schematic diagram.
Fig. 3 invades profit schematic diagram between LED chip.
Fig. 4 is LED chip upside-down mounting schematic diagram.
Fig. 5 is that Sapphire Substrate is peeled off schematic diagram.
Fig. 6 is that LED chip carries out color light wave conversion schematic diagram.
Fig. 7 is for adding transparent substrates schematic diagram.
Fig. 8 is LED chip group sliver schematic diagram.
Fig. 9 is the optional splinter method schematic diagram of LED chip group in the embodiment of the present invention 2.
Figure 10 is the optional splinter method end view of LED chip group schematic diagram in the embodiment of the present invention 2.
Figure 11 is the optional splinter method schematic diagram of LED chip group in the embodiment of the present invention 3.
Figure 12 adds equal light shield front view in the embodiment of the present invention 3.
Figure 13 adds equal photomask structure schematic diagram in the embodiment of the present invention 3.
Figure 14 is the flow chart that the present invention makes LED display.
Embodiment
Below in conjunction with accompanying drawing, the present invention will be further described, but embodiments of the present invention are not limited to this.
In Fig. 5 to Figure 14,101-Sapphire Substrate, 102-light-emitting area, 103-support membrane, 104-color converting layer, the new transparent substrates of 105-, the equal light shield of 106-, 107-scattering film.
Enhancing productivity, when reducing production costs, chip light wave is invaded profit problem when solving LED chip upside-down mounting, adopt following methods to make LED display, wherein LED display comprises the pel array on substrate, substrate, each pixel packets of pel array is containing the two or more LED chips that are fixed on substrate, and described LED chip is flip-chip packaged; Described manufacture method comprises the following steps:
First adopt substrate desquamation technology to carry out Sapphire Substrate 101 to LED wafer and peel off, as shown in Figure 5; Be coated with the methods such as the polymer of the nano material of fluorescent material or the quantum dot corresponding with primary colors and carry out wavelength conversion peeling off light-emitting area 102, as shown in Figure 6; LED chip after wavelength conversion is added to new transparent substrates 105, as shown in Figure 7; Finally divide into groups to cut, realize " group is grabbed " and make LED demonstration display screen, as shown in Figure 8.Thereby realize when reducing highly dense LED display cost, optimize display effect, improve reliability.As shown in figure 14.
Embodiment mono-
A kind of LED display comprises: the pel array on substrate, substrate, and be fixed on the LED chip that forms pixel on substrate, LED chip adopts flip chip technology, as shown in Figure 3, and by the light-emitting area 102 of chip upward, the electric of wafer faces down, mounted facing to substrate by electrode district, can save this operation of bonding wire compared to formal dress technique, cost-saving, improve encapsulating products reliability, as shown in Figure 3.
On the LED of Same Wavelength wafer (WAFER), carry out light wave color conversion, make the LED chip on LED wafer form pel array, and the primary colors that the primary colors of corresponding its place pixel of each LED chip is concentrated, LED chip wafer is blue chip or UV chip in the present embodiment, and take traditional RGB as primary colors collection, primary colors sends light wave color conversion by LED chip and obtains, and applies the methods such as fluorescent material or the quantum dot corresponding with primary colors at LED light-emitting area.
Invade profit for what solve that Sapphire Substrate 101 causes chip light wave, carrying out before light wave color conversion, the Sapphire Substrate 101 of LED chip is peeled off, as shown in Figure 5.In the present embodiment, adopt laser lift-off technique to peel off Sapphire Substrate 101.After substrate desquamation, apply fluorescent material in light-emitting area 102 and set up color converting layer, realize wavelength color conversion, as shown in Figure 5.Further, carrying out after wavelength color conversion, can utilize that polymeric material is bonding is made into new transparent substrates 105, as shown in Figure 7.The cutting of dividing into groups subsequently, as shown in Figure 8, take RGB three primary colors as one group, carries out " group is grabbed ", finally chipset or one single chip is placed on to the precalculated position of each pixel on substrate.
Embodiment bis-
On the basis of embodiment mono-, the doubly several pixels take 2, as a chipset, are carried out sliver to the epitaxial loayer of LED wafer, retain the integrality of Sapphire Substrate 101 simultaneously.In the present embodiment, take 4 pixels as a chipset, making pel spacing is the LED display of 1 millimeter (P1.0), as shown in Figure 9 sliver.In chipset, the distance between pixel and pixel is 1 millimeter, as shown in figure 10.Subsequently, according to the mode of embodiment mono-, chipset is carried out to Sapphire Substrate 101 and peel off, chromatograph conversion, adds new transparent substrates.Finally, in the mode of chipset, cut, carry out " group is grabbed ", chipset or one single chip are placed on to the precalculated position of each pixel on substrate.Further improve LED screen production efficiency.
Embodiment tri-
On the basis of embodiment mono-, the doubly several pixels take 2, as a chipset, are carried out sliver to LED wafer, as shown in figure 11.Be provided with the equal light shield 106 of perforate on LED display surface, as shown in figure 12.All the perforate of light shield 106 is corresponding with location of pixels, and all light shield 106 outer surfaces are provided with scattering film 107, and inwall scribbles reflectance coating.In the present embodiment, the light that in each pixel, tri-LED chips of RGB send reflexes to scattering film 107 through corresponding aperture inwall and goes out, through the scattering of scattering film 107, as shown in figure 13.The light-emitting area of each pixel is enlarged into the perforated area of aperture, therefore can improve pixel filling rate, further improves display quality.
Above-described embodiments of the present invention, do not form limiting the scope of the present invention.Any modification of having done within spiritual principles of the present invention, be equal to and replace and improvement etc., within all should being included in claim protection range of the present invention.
Claims (7)
1. a LED display manufacture method, described LED display comprises the pel array on substrate, substrate, and each pixel packets of pel array is containing the two or more LED chips that are fixed on substrate, and described LED chip is flip-chip packaged; It is characterized in that, described manufacture method comprises the following steps:
S1. on same LED wafer, make the LED chip of same color light-wave band, described emission wavelength is the true qualities wavelength that LED chip sends light wave, and the light wave of described true qualities is less than or equal to wavelength minimum in the primary colors of pixel;
S2. adopting substrate desquamation method to carry out Sapphire Substrate to LED chip peels off;
S3. set up color converting layer peeling off light-emitting area, carry out wavelength color conversion to realize, make LED chip form pel array, the primary colors that the primary colors of corresponding its place pixel of each LED chip is concentrated;
S4. on the LED chip after wavelength conversion, add transparent substrates; Mode with chipset is carried out sliver, and said chip group comprises two or more LED chips;
S5. LED chip group or one single chip are positioned over to each pixel precalculated position on substrate, make LED display.
2. LED display manufacture method according to claim 1, is characterized in that, the LED chip of the light-wave band of the same color that described step S1 makes is blue chip or UV chip.
3. LED display manufacture method according to claim 1, is characterized in that, step S2 adopts laser lift-off to carry out Sapphire Substrate and peels off.
4. LED display manufacture method according to claim 1, is characterized in that, described step S3 is by setting up color converting layer at the polymer of peeling off light-emitting area and apply the nano material of fluorescent material or the quantum dot corresponding with primary colors.
5. according to the LED display manufacture method described in claim 1 to 4 any one, it is characterized in that, described chipset comprises doubly several pixels of 2; Before step S1, also the epitaxial loayer of LED wafer is carried out to sliver, make to keep spacing between the each pixel in chipset, and it is complete to retain Sapphire Substrate.
6. LED display manufacture method according to claim 5, is characterized in that, between the each pixel in described chipset, keeping spacing is 1mm.
7. according to the LED display manufacture method described in claim 1 to 4 any one, it is characterized in that, described chipset comprises doubly several pixels of 2, LED wafer is carried out after sliver making LED display by step S1 to step S4 before step S1;
Described LED display surface is provided with the equal light shield of perforate, and the perforate of described equal light shield is corresponding with location of pixels, and all light shield outer surface is provided with scattering film, and inwall scribbles reflectance coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310673129.4A CN103840042A (en) | 2013-12-12 | 2013-12-12 | Method for manufacturing LED display screen |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310673129.4A CN103840042A (en) | 2013-12-12 | 2013-12-12 | Method for manufacturing LED display screen |
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| CN103840042A true CN103840042A (en) | 2014-06-04 |
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| CN201310673129.4A Pending CN103840042A (en) | 2013-12-12 | 2013-12-12 | Method for manufacturing LED display screen |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876562A (en) * | 2017-03-30 | 2017-06-20 | 广东普加福光电科技有限公司 | A kind of new micro LED structure and preparation method thereof |
| CN108447968A (en) * | 2018-02-06 | 2018-08-24 | 惠州市华星光电技术有限公司 | A kind of quantum dot LED and preparation method thereof |
| WO2020199527A1 (en) * | 2019-03-29 | 2020-10-08 | 云谷（固安）科技有限公司 | Display panel preparation method, display panel and display apparatus |
| CN113410344A (en) * | 2020-03-16 | 2021-09-17 | 重庆康佳光电技术研究院有限公司 | LED chip set, display screen and manufacturing method thereof |
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| CN102751275A (en) * | 2012-07-19 | 2012-10-24 | 广东威创视讯科技股份有限公司 | Light-emitting diode display screen and manufacturing method thereof |
| JP2013211250A (en) * | 2012-02-27 | 2013-10-10 | Mitsubishi Chemicals Corp | Wavelength conversion member, and semiconductor light-emitting device using the same |
| CN103441101A (en) * | 2013-08-28 | 2013-12-11 | 中国科学院半导体研究所 | Method for preparing full-color light emitting diode module |
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2013
- 2013-12-12 CN CN201310673129.4A patent/CN103840042A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2013211250A (en) * | 2012-02-27 | 2013-10-10 | Mitsubishi Chemicals Corp | Wavelength conversion member, and semiconductor light-emitting device using the same |
| CN102751275A (en) * | 2012-07-19 | 2012-10-24 | 广东威创视讯科技股份有限公司 | Light-emitting diode display screen and manufacturing method thereof |
| CN103441101A (en) * | 2013-08-28 | 2013-12-11 | 中国科学院半导体研究所 | Method for preparing full-color light emitting diode module |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876562A (en) * | 2017-03-30 | 2017-06-20 | 广东普加福光电科技有限公司 | A kind of new micro LED structure and preparation method thereof |
| CN108447968A (en) * | 2018-02-06 | 2018-08-24 | 惠州市华星光电技术有限公司 | A kind of quantum dot LED and preparation method thereof |
| WO2020199527A1 (en) * | 2019-03-29 | 2020-10-08 | 云谷（固安）科技有限公司 | Display panel preparation method, display panel and display apparatus |
| US11804575B2 (en) | 2019-03-29 | 2023-10-31 | Chengdu Vistar Optoelectronics Co., Ltd. | Manufacturing method of display panel, display panel and display apparatus |
| CN113410344A (en) * | 2020-03-16 | 2021-09-17 | 重庆康佳光电技术研究院有限公司 | LED chip set, display screen and manufacturing method thereof |
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Application publication date: 20140604 |