CN111710689A - Micro LED packaging structure with high color rendering property - Google Patents
Micro LED packaging structure with high color rendering property Download PDFInfo
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- CN111710689A CN111710689A CN202010445089.8A CN202010445089A CN111710689A CN 111710689 A CN111710689 A CN 111710689A CN 202010445089 A CN202010445089 A CN 202010445089A CN 111710689 A CN111710689 A CN 111710689A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 19
- 238000009877 rendering Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 229910000679 solder Inorganic materials 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 9
- 238000001465 metallisation Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000012536 packaging technology Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 43
- 239000011810 insulating material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a Micro LED packaging structure with high color rendering, which effectively solves the problems of high alignment difficulty, high workload and single chip position deviation movement in the prior packaging technology for arranging single LED chips in a single alignment way. The scheme is that the LED packaging structure comprises a substrate, wherein a light emitting diode is connected to the substrate through solder paste, and a QD film layer is arranged on the upper surface of the light emitting diode. The light emitting diode in the Micro LED packaging structure forms a plurality of independent LEDs because the N poles are arranged below the P poles at intervals; therefore, the alignment problem of a single chip existing in the huge transfer of the independent micron-scale chip can be avoided, and the problems of position deviation movement and the like of the single chip caused by the huge transfer are avoided. Under the condition that the LED is efficiently and simply assembled, the color luminous layer is compounded, so that the structure has a wider application range.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a Micro LED packaging structure with high color rendering.
Background
Micro LEDs are a new generation of display technology. Namely LED micro-scaling and matrixing technology; refers to the size of high-density micro-sized LED integrated on a chip, such as the addressable and individually driven lighting of each pixel of an LED display screen, and the pixel grade is reduced from millimeter grade to micron grade. The Micro LED not only inherits the advantages of high efficiency, high brightness, high reliability and quick response time of the traditional LED, but also has the characteristics of energy conservation, simple mechanism, small volume, thinness and no need of a backlight source for light emission.
The existing packaging technology is mainly that single LED chips are aligned and arranged singly, the alignment problem exists when the independent micron-sized chips are transferred in a huge manner, and the problems that the workload is large and the position deviation of the single chip moves exist in the huge transfer.
Disclosure of Invention
Aiming at the situation, in order to overcome the defects of the prior art, the invention provides the Micro LED packaging structure with high color rendering, which effectively solves the problems of high alignment difficulty, large workload and single chip position deviation movement in the prior art for arranging the single LED chips in a single alignment way.
The technical scheme for solving the problem is that the LED packaging structure comprises a substrate, wherein a light emitting diode is connected to the substrate through solder paste, and a QD film layer is arranged on the upper surface of the light emitting diode.
Preferably, the light emitting diode comprises a P-level, quantum wells arranged at intervals in an array manner and arranged below the P-level at intervals, and an N-level fixed on the lower sides of the quantum wells, the substrate is composed of a substrate, an insulating layer fixed on the upper layer of the substrate, and metal layers arranged on the insulating layer at intervals, and a gap formed between the quantum well unit and the N-level below the P-level is filled with an insulating substance. The insulating material can ensure that the side surface of the N-level chip after cutting is smooth, and can limit light in the N-level chip, thereby improving the luminous efficiency of the light-emitting diode.
Preferably, the N-level lower surface of the light emitting diode is connected with the substrate through solder paste after being subjected to metallization treatment. The substrate is a CMOS structure. The metalized N-level lower surface corresponds to the upper surface of the metal layer one by one and has the same area. And the upper surface of the metal layer is connected with the N-level lower surface after metallization treatment through solder paste.
In the invention, the substrate is a GaN/Si substrate, the metal layer can improve the luminous efficiency of the light-emitting diode, and the metal layer comprises but is not limited to an Au layer or an Ag layer; the QD membranous layer sets up the upper surface at the P utmost point for the protection P utmost point does not receive external environment's influence, enough improves emitting diode 5's light transmissivity, and can flash different colors. In the present invention, the P-poles are electrically connected, and the spaced N-poles 501 are electrically independent.
In the embodiment of the present invention, the insulating substance at the gap formed between the N-pole and the P-pole and the insulating layer of the CMOS structure may employ the same or different insulating materials.
The substrate in the present invention may be a TFT layer structure.
The light emitting diode in the Micro LED packaging structure forms a plurality of independent LEDs because the N poles are arranged below the P poles at intervals; therefore, the alignment problem of a single chip existing in the huge transfer of the independent micron-scale chip can be avoided, and the problems of position deviation movement and the like of the single chip caused by the huge transfer are avoided. In addition, the Micro LED packaging structure can effectively improve the light efficiency, the light transmittance and the conductivity of the micron chip. Under the condition that the LED is efficiently and simply assembled, the color luminous layer is compounded, so that the structure has a wider application range.
Drawings
FIG. 1 is a front view of a CMOS substrate according to the present invention.
FIG. 2 is a front view of the TFT substrate of the present invention.
FIG. 3 is a flow chart of the production process of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made in detail with reference to the accompanying drawings 1 to 3.
The technical scheme for solving the problem is that the LED packaging structure comprises a substrate, wherein a light emitting diode is connected to the substrate through solder paste, and a QD film layer 1 is arranged on the upper surface of the light emitting diode.
The Micro LED package structure with high color rendering index according to claim 1, wherein the light emitting diode comprises a P level 2, quantum wells 3 arranged at intervals in an array manner and arranged below the P level 2 at intervals, and an N level 4 fixed at the lower sides of the quantum wells, the substrate is composed of a substrate 501, an insulating layer 502 fixed at an upper layer of the substrate 501, and metal layers 503 arranged at intervals on the insulating layer 502, and an insulating substance 6 is filled in a gap formed between the N level 4 and the quantum well 3 unit below the P level 2. The insulating material 6 can ensure that the side surface of the N-level chip is smooth after being cut, and can limit light in the N-level chip, so that the luminous efficiency of the light-emitting diode is improved.
The packaging structure of a Micro LED with high color rendering index according to claim 1, wherein the lower surface of the N level 4 of the LED is connected with the substrate through solder paste 7 after being metallized. The substrate is a CMOS structure 5. The lower surface of the N-level 4 after metallization corresponds to the upper surface of the metal layer 503 one by one, and the areas of the lower surface and the upper surface are the same. The upper surface of the metal layer 503 is connected with the lower surface of the N-stage 4 after metallization treatment by solder paste 7.
In the present invention, the substrate 501 is a GaN/Si substrate, the metal layer 503 can improve the light emitting efficiency of the light emitting diode, and the metal layer 503 includes, but is not limited to, an Au layer or an Ag layer; the QD membranous layer sets up the upper surface at the P utmost point for the protection P utmost point does not receive external environment's influence, enough improves emitting diode 5's light transmissivity, and can flash different colors. In the present invention, the P-poles are electrically connected, and the spaced N-poles 501 are electrically independent.
In the embodiment of the present invention, the insulating substance at the gap formed between the N-pole and the P-pole and the insulating layer of the CMOS structure may employ the same or different insulating materials.
The substrate in the present invention may be a TFT layer structure 8.
The QD film layer manufacturing process of the invention: cleaning and drying a transparent substrate or a film (sapphire, glass, subgrid force and the like), and etching regular grooves on the transparent substrate or the film according to the subsequent module packaging arrangement requirement; QD powder which can emit red light or yellow light after being irradiated by blue light is poured into the corresponding groove (the QD powder exists in the form of powder, dispersed in ink or photosensitive glue); and depositing a waterproof air-isolating film (a single-layer or multi-layer composite film of polyurethane, epoxy resin, parylene and the like) on the transparent substrate or film.
The preparation method of the packaging structure comprises the following steps:
firstly, sequentially arranging an N pole 4, a quantum well 3 and a P pole 2 on a GaN/Si substrate from bottom to top to form a pump crystal layer; then fixing the P pole of the pump crystal layer on the lower surface of the temporary transfer substrate 9 to protect the P pole;
secondly, the method comprises the following steps: removing the GaN/Si substrate through laser lift-off (LLC), and carrying out metallization treatment on the lower surface of the exposed N pole;
thirdly, the method comprises the following steps: etching the metalized N pole 4 until the metalized N pole 4 reaches the P pole 2, so that the continuous N pole 4 and the quantum well 3 are divided into N pole 4 structures with certain intervals, and a structure with P and N in total is formed, namely a plurality of independent LEDs are formed;
fourthly: a layer of insulating substance 6 is filled at the interval of the independent LED, and the LED with the insulating substance 6 is fixed on the upper surface of the metal layer 503 of the CMOS structure 5 through solder paste 7; and finally, stripping the temporary transfer substrate 9 on the P pole 2, and marking, namely horizontal row marking and vertical column marking, arranged on the upper left independent LED on the front, back and left side surfaces of the base 501 of the CMOS.
Fifthly, a QD film layer 10 is manufactured, the transparent film is cleaned and dried, the dried film is marked on the front, rear, left and right side walls of the film according to the LED arrangement marks in the fourth step, regular grooves are carved on the film according to the marks on the film, the grooves are grooved at positions corresponding to red light and yellow light, and the grooves corresponding to blue light are not grooved, namely, two corresponding grooves and one corresponding groove are arranged on three adjacent blue light LEDs, and then QD powder capable of emitting red light or yellow light under the irradiation of blue light (the QD powder is dispersed in ink or photosensitive adhesive) is sequentially filled in the grooves; and depositing a waterproof air-insulating film (a single-layer or multi-layer composite film of polyurethane, epoxy resin, parylene and the like) on the transparent substrate or film to form the QD film layer.
And sixthly, according to the mark on the substrate and the mark on the QD film layer, the two are attached together, so that the three adjacent blue LEDs respectively correspond to the QD powder which emits red light after being irradiated by the QD powder, the QD powder which emits yellow light after being irradiated by the QD powder and the non-QD powder to directly emit blue light.
In the invention, when the substrate is in a TFT structure, the P levels of a plurality of divided LEDs are attached to the QD film layer according to the standard, and then the QD film layers with the LEDs are combined together according to the requirement.
Under the irradiation of the blue light Micro-LED structure, the QD powder in the corresponding position element in the QD film layer is excited to emit green light G and red light R under the control of the TFT. The red light, the green light and the blue light B without the groove band form a basic element, and then a color image is formed.
According to the structure of the Micro LED with P and N in common, due to the adoption of the process mode of etching first and then Bonding, the influence on the CMOS structure caused by the fact that the Bonding first and then etching exist in the common N type structure in the prior art can be effectively avoided.
The light emitting diode in the Micro LED packaging structure forms a plurality of independent LEDs because the N poles are arranged below the P poles at intervals; therefore, the alignment problem of a single chip existing in the huge transfer of the independent micron-scale chip can be avoided, and the problems of position deviation movement and the like of the single chip caused by the huge transfer are avoided. In addition, the Micro LED packaging structure can effectively improve the light efficiency, the light transmittance and the conductivity of the micron chip. Under the condition that the LED is efficiently and simply assembled, the color luminous layer is compounded, so that the structure has a wider application range.
Claims (4)
1. The Micro LED packaging structure with high color rendering property comprises a substrate, and is characterized in that a light emitting diode is connected to the substrate through solder paste, and a QD film layer (1) is arranged on the upper surface of the light emitting diode.
2. The Micro LED packaging structure with high color rendering index according to claim 1, wherein the light emitting diode comprises a P stage (2), quantum wells (3) arranged at intervals in an array manner and arranged below the P stage (2) at intervals, and an N stage (4) fixed on the lower sides of the quantum wells, the substrate is composed of a substrate (501), an insulating layer (502) fixed on the upper layer of the substrate (501) and metal layers (503) arranged on the insulating layer (502) at intervals, and gaps formed between the units of the N stage (4) and the quantum wells (3) below the P stage (2) are filled with insulating substances (6).
3. A Micro LED package structure with high color rendering index according to claim 1, wherein the lower surface of the N stage (4) of the LED is connected with the substrate through solder paste (7) after being metallized.
4. A preparation method of a Micro LED packaging structure with high color rendering property is characterized by comprising the following steps:
firstly, sequentially arranging an N pole (4), a quantum well (3) and a P pole (2) on a GaN/Si substrate from bottom to top to form a pump crystal layer; then fixing the P pole of the pump crystal layer on the lower surface of a temporary transfer substrate (9) to protect the P pole;
secondly, removing the GaN/Si substrate through laser lift-off, and carrying out metallization treatment on the lower surface of the exposed N pole;
thirdly, etching the metalized N pole (4) until the metalized N pole reaches the P pole (2), so that the continuous N pole (4) and the quantum well (3) are divided into N pole (4) structures with certain intervals, and a structure with P and N in total is formed, namely a plurality of independent LEDs are formed;
fourthly, a layer of insulating substance (6) is filled at the interval of the independent LEDs, and the LEDs with the insulating substance (6) are fixed on the upper surface of the metal layer (503) of the CMOS structure (5) through solder paste (7); finally, stripping the temporary transfer substrate (9) on the P pole (2), and marking the upper left independent LED arrangement on the front, back, left and back side surfaces of the base (501) of the CMOS, namely horizontal marks and vertical marks;
fifthly, a QD film layer (10) is manufactured, the transparent film is cleaned and dried, the dried film is marked on the front, rear, left and right side walls of the film according to the LED arrangement marks in the fourth step, regular grooves are carved on the film according to the marks on the film, the grooves are formed at positions corresponding to red light and yellow light, the grooves do not form grooves corresponding to blue light, namely, two corresponding grooves are formed in three adjacent blue light LEDs, and one corresponding groove is not formed, and then QD powder capable of emitting red light or yellow light is sequentially filled in the grooves after the blue light is irradiated; depositing a waterproof air-isolating film on the transparent substrate or film to form a QD film layer;
and sixthly, according to the mark on the substrate and the mark on the QD film layer, the two are attached together, so that the three adjacent blue LEDs respectively correspond to the QD powder which emits red light after being irradiated by the QD powder, the QD powder which emits yellow light after being irradiated by the QD powder and the QD-free powder to directly emit blue light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010445089.8A CN111710689A (en) | 2020-05-23 | 2020-05-23 | Micro LED packaging structure with high color rendering property |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010445089.8A CN111710689A (en) | 2020-05-23 | 2020-05-23 | Micro LED packaging structure with high color rendering property |
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| CN111710689A true CN111710689A (en) | 2020-09-25 |
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| CN202010445089.8A Pending CN111710689A (en) | 2020-05-23 | 2020-05-23 | Micro LED packaging structure with high color rendering property |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114335286A (en) * | 2020-09-30 | 2022-04-12 | Tcl科技集团股份有限公司 | Bonding method of LED chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356386A (en) * | 2016-09-30 | 2017-01-25 | 福州大学 | Micro-LED (Micro-light emitting diode) array backlight source-based ink-jet printing quantum dot display device |
| CN107393938A (en) * | 2017-08-12 | 2017-11-24 | 左洪波 | Micro LED blue light display screen method for packing |
| CN109065689A (en) * | 2018-07-18 | 2018-12-21 | 易美芯光（北京）科技有限公司 | A kind of Micro LED encapsulation structure and preparation method thereof |
| CN208889692U (en) * | 2018-10-17 | 2019-05-21 | 厦门玻尔科技有限公司 | It can reduce the QDLED dot structure and QDLED display screen of colour cast |
-
2020
- 2020-05-23 CN CN202010445089.8A patent/CN111710689A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356386A (en) * | 2016-09-30 | 2017-01-25 | 福州大学 | Micro-LED (Micro-light emitting diode) array backlight source-based ink-jet printing quantum dot display device |
| CN107393938A (en) * | 2017-08-12 | 2017-11-24 | 左洪波 | Micro LED blue light display screen method for packing |
| CN109065689A (en) * | 2018-07-18 | 2018-12-21 | 易美芯光（北京）科技有限公司 | A kind of Micro LED encapsulation structure and preparation method thereof |
| CN208889692U (en) * | 2018-10-17 | 2019-05-21 | 厦门玻尔科技有限公司 | It can reduce the QDLED dot structure and QDLED display screen of colour cast |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114335286A (en) * | 2020-09-30 | 2022-04-12 | Tcl科技集团股份有限公司 | Bonding method of LED chip |
| CN114335286B (en) * | 2020-09-30 | 2024-01-23 | Tcl科技集团股份有限公司 | Bonding method of LED chip |
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