CN113410344A - LED chip set, display screen and manufacturing method thereof - Google Patents
LED chip set, display screen and manufacturing method thereof Download PDFInfo
- Publication number
- CN113410344A CN113410344A CN202010183835.0A CN202010183835A CN113410344A CN 113410344 A CN113410344 A CN 113410344A CN 202010183835 A CN202010183835 A CN 202010183835A CN 113410344 A CN113410344 A CN 113410344A
- Authority
- CN
- China
- Prior art keywords
- led chip
- semiconductor layer
- led
- layer
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000002096 quantum dot Substances 0.000 claims abstract description 14
- 238000005538 encapsulation Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000000843 powder Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims description 191
- 238000000034 method Methods 0.000 claims description 51
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 238000005476 soldering Methods 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000004026 adhesive bonding Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 abstract description 16
- 230000008439 repair process Effects 0.000 abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 6
- 239000003086 colorant Substances 0.000 abstract description 4
- 239000003574 free electron Substances 0.000 description 18
- 239000012535 impurity Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 16
- 229910000679 solder Inorganic materials 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000005284 excitation Effects 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
The invention belongs to the technical field of LED displays, in particular to an LED chip group, a display screen and a manufacturing method thereof; the epitaxial layer is arranged on the growth substrate, the plurality of LED chip groups are arranged on the epitaxial layer, and the distance between every two adjacent LED chip groups is larger than the distance between every two adjacent LED chips in the LED chip groups, so that the cutting is convenient, the cutting yield and efficiency are improved, the problem of poor cutting caused by the fact that the sizes of the LED chips are reduced is effectively solved, and the yield and efficiency of massive transfer and repair are also improved; and make on the backplate and form the pad, shift a plurality of LED chipset to the pad again on, then convert every LED chipset into with phosphor powder or quantum dot and have the pixel that can send three kinds of colours of ruddiness, green glow and blue light, then coat encapsulation material to be convenient for make and show.
Description
Technical Field
The invention belongs to the technical field of LED displays, and particularly relates to an LED chip set, a display screen and a manufacturing method of the LED chip set.
Background
The LED chip is also called as an LED light-emitting chip, is a core component of an LED lamp, namely a P-N junction, and has the main functions of: converting the electric energy into light energy. The semiconductor wafer is composed of two parts, one part is a P-type semiconductor in which holes are dominant, and the other end is an N-type semiconductor in which electrons are dominant; when the two semiconductors are connected, a P-N junction is formed between the two semiconductors; when current is applied to the wafer through the wire, electrons are pushed to the P region where they recombine with holes and then emit energy in the form of photons, which is the principle of LED emission, and the wavelength of the light, i.e., the color of the light, is determined by the material forming the P-N junction.
At present, in a conventional LED chip manufacturing process, an epitaxial layer is formed on a substrate, then an independent LED chip is obtained through processes such as photolithography, etching, grinding, and cutting, and then the independent LED chip is subjected to processes such as transfer welding, and then an optical system such as a display and a backlight is performed.
Disclosure of Invention
In order to solve the problems, the invention provides an LED chip group and a method thereof, wherein an epitaxial layer is arranged on a growth substrate, a plurality of LED chip groups are arranged on the epitaxial layer, and the distance between the adjacent LED chip groups is larger than the distance between the adjacent LED chips in the LED chip groups, so that the cutting is convenient, the cutting yield and efficiency are improved, the problem of poor cutting caused by the reduction of the size of the LED chips is effectively solved, and the yield and efficiency of mass transfer and repair are also improved; the display screen and the manufacturing method thereof are characterized in that a bonding pad is formed on the back plate, then a plurality of LED chip groups are transferred onto the bonding pad, then each LED chip group is converted into a pixel capable of emitting red light, green light and blue light by fluorescent powder or quantum dots, and then the pixel is coated with a packaging adhesive material, so that the display screen is convenient to manufacture and display.
The invention adopts a technical scheme that:
a method for manufacturing an LED chip group comprises the following steps:
forming an epitaxial layer on a growth substrate;
patterning the epitaxial layer to enable the epitaxial layer to form at least two LED chip groups, wherein each LED chip group comprises at least two LED chips, the distance between the LED chip groups is a first distance, the distance between the at least two LED chips is a second distance, and the first distance is larger than the second distance.
As an improvement of the invention, the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially arranged; the first semiconductor layer is an N-type semiconductor layer or a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer or a P-type semiconductor layer, and the first semiconductor layer is tightly attached to the growth substrate.
As a further improvement of the present invention, different types of semiconductor layers are used for the first semiconductor layer and the second semiconductor layer, respectively.
As a further improvement of the present invention, the LED chip group includes three or a multiple of three of the LED chips.
As a further improvement of the invention, the arrangement mode of the LED chips in the LED chip group adopts a side-by-side mode or a triangular stacking mode.
An LED chip group, which comprises the LED chip group manufactured by any one of the above methods.
A display screen manufacturing method, wherein the display screen comprises a back plate and an LED chip group manufactured by any one of the methods, comprises the following steps:
manufacturing and forming a bonding pad on the back plate;
transferring a plurality of LED chip groups onto the bonding pads;
and converting each LED chip group into pixels capable of emitting red light, green light and blue light by using fluorescent powder or quantum dots, and coating an encapsulation adhesive material.
As an improvement of the invention, in the step of transferring a plurality of LED chip sets onto the bonding pad, the method comprises:
carrying out die bonding treatment, namely correspondingly arranging each LED chip group on a bonding pad on the back plate;
and performing reflow soldering treatment to fix each LED chip group on the backboard.
As a further improvement of the present invention, in the step of forming the pads on the back plate, the method includes: and forming a film metal layer on the back plate, and patterning the film metal layer through gluing, exposing, developing, etching and stripping to form a metal type bonding pad corresponding to a metal panel of an LED chip in the LED chip set.
A display screen comprises a back plate and an LED chip set manufactured by any one of the methods.
The invention has the beneficial effects that:
1. the epitaxial layer is arranged on the growth substrate, the LED chip groups are arranged on the epitaxial layer and comprise a plurality of LED chips, the LED chips are grouped according to the distance between the LED chip groups, and the distance between the adjacent LED chip groups is larger than the distance between the adjacent LED chips in the LED chip groups, so that the epitaxial layer is cut by taking the groups as the minimum unit to obtain a plurality of groups of LED chip groups, the cutting yield and efficiency are improved, and the problem of poor cutting caused by the fact that the sizes of the LED chips are reduced is effectively solved;
2. the epitaxial layer is cut by taking the group as the minimum unit to obtain a plurality of groups of LED chips, so that the yield and efficiency of mass transfer and repair are improved;
3. the bonding pad is formed on the back plate, so that the LED chip groups can be conveniently transferred to the bonding pad, and then the fluorescent powder or the quantum dots are used for converting each LED chip group into pixels with three colors of RGB, thereby being beneficial to improving the efficiency of LED transfer in the manufacturing process of the display screen.
Drawings
FIG. 1 is a schematic view of a display screen of an LED chip of the present invention;
FIG. 2 is a schematic diagram of a display screen of an LED chip of the present invention that can be cut;
FIG. 3 is a schematic diagram showing a fourth arrangement of a display screen of LED chips according to an embodiment of the present invention;
FIG. 4 is a schematic diagram showing an arrangement of a fifth embodiment of a display screen of LED chips according to the present invention;
FIG. 5 is a schematic diagram showing an arrangement of a sixth embodiment of a display screen of LED chips according to the present invention;
FIG. 6 is a schematic view of an epitaxial layer of a display screen of an LED chip of the present invention;
FIG. 7 is a block flow diagram of a seventh embodiment of a method for manufacturing a display screen of LED chips according to the present invention;
FIG. 8 is a schematic view showing a solder paste printed in a seventh embodiment of the method for manufacturing a display screen of LED chips according to the present invention;
FIG. 9 is a schematic view of a display panel of LED chips manufactured according to a seventh embodiment of the method of the present invention during die bonding;
fig. 10 is a schematic view of a reflow process in a seventh embodiment of the method for manufacturing a display screen of LED chips according to the present invention;
FIG. 11 is a schematic view of a display screen of LED chips manufactured by the method of the present invention during molding;
fig. 12 is a block flow diagram of an eighth embodiment of a method for manufacturing a display screen of an LED chip according to the present invention;
fig. 13 is a schematic view of a metal pad in accordance with an eighth embodiment of the method for manufacturing a display screen of an LED chip according to the present invention;
FIG. 14 is a schematic view showing an LED transfer in an eighth embodiment of the method for manufacturing a display screen of LED chips according to the present invention;
FIG. 15 is a schematic diagram of the bonding of an eighth embodiment of the method for manufacturing a display screen of LED chips according to the present invention;
FIG. 16 is a schematic view of an encapsulation process according to an eighth embodiment of the method for manufacturing a display screen of LED chips of the present invention;
the text labels in the figures are represented as: the manufacturing method comprises the following steps of 1-a growth substrate, 2-an epitaxial layer, 21-a first semiconductor layer, 22-an active layer, 23-a second semiconductor layer, 3-an LED chip group, 4-an LED chip, 41-a metal panel, 5-a backboard, 6-a bonding pad, 7-solder paste, 8-fluorescent powder/quantum dots, 9-a packaging layer and 91-a transfer device.
Detailed Description
The following detailed description of the present invention is given for the purpose of better understanding technical solutions of the present invention by those skilled in the art, and the present description is only exemplary and explanatory and should not be construed as limiting the scope of the present invention in any way.
The first embodiment is as follows:
in the invention, a first embodiment of an LED chip group 3 is provided, the first embodiment of the LED chip group 3 comprises three LED chips 4, the LED chips 4 are rectangular, and the arrangement mode of the LED chips 4 in the LED chip group 3 adopts a side-by-side mode; the distance Y between the adjacent LED chip groups 3 is larger than the distance X between the adjacent LED chips 4 in the LED chip groups 3; the epitaxial layer 2 comprises a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23 which are arranged in sequence; the active layer 22 may also be said to be an active layer or a light emitting layer; the active Layer 22 may be a Multiple Quantum Well (MQW) Layer or a Single Quantum Well (SQW) Layer formed by alternately stacking a plurality of Well layers (Well Layer) and a plurality of Barrier layers (Barrier Layer), but not limited thereto. The first semiconductor layer 21 is an N-type semiconductor layer or a P-type semiconductor layer, and the second semiconductor layer 23 is an N-type semiconductor layer or a P-type semiconductor layer; the first semiconductor layer 21 and the second semiconductor layer 23 are made of different types of semiconductor layers, wherein the N-type semiconductor layer is made of an N-type semiconductor, the N-type semiconductor is mainly an electron-conductive semiconductor, the concentration of free electrons is far greater than that of holes, the free electrons are mainly provided by impurity atoms, and the holes are formed by thermal excitation. The more impurities are doped, the higher the concentration of free electrons and the stronger the conductivity. The P-type semiconductor layer is composed of a P-type semiconductor, the P-type semiconductor is mainly used for hole conduction with positive charge, the more impurities are doped, the higher the hole concentration is, and the stronger the conductivity is. Specifically, the epitaxial layer 2 is composed of a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23 sequentially arranged, for example, the first semiconductor layer 21 is a P-type semiconductor, the second semiconductor layer 23 is an N-type semiconductor, and the first semiconductor layer 21 and the second semiconductor layer 23 form a P-N junction in the epitaxial layer 2, so that when a current is applied to the LED chip 4, electrons are pushed to a P region where the electrons recombine with holes and then emit energy in the form of photons.
Example two:
the second embodiment of the LED chip group 3 is provided in the invention, the second embodiment of the LED chip group 3 comprises three LED chips 4, the LED chips 4 are rectangular, and the arrangement mode of the LED chips 4 in the LED chip group 3 adopts a triangular stacking mode; the distance Y between the adjacent LED chip groups 3 is larger than the distance X between the adjacent LED chips 4 in the LED chip groups 3; the epitaxial layer 2 comprises a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23 which are arranged in sequence; the active layer 22 may also be said to be an active layer or a light emitting layer; the active layer 22 may be a multi-quantum well layer or a single quantum well layer formed by alternately stacking a plurality of well layers and a plurality of barrier layers, but not limited thereto. The first semiconductor layer 21 is an N-type semiconductor layer or a P-type semiconductor layer, and the second semiconductor layer 23 is an N-type semiconductor layer or a P-type semiconductor layer; the first semiconductor layer 21 and the second semiconductor layer 23 are made of different types of semiconductor layers, wherein the N-type semiconductor layer is made of an N-type semiconductor, the N-type semiconductor is mainly an electron-conductive semiconductor, the concentration of free electrons is far greater than that of holes, the free electrons are mainly provided by impurity atoms, and the holes are formed by thermal excitation. The more impurities are doped, the higher the concentration of free electrons and the stronger the conductivity. The P-type semiconductor layer is composed of a P-type semiconductor, the P-type semiconductor is mainly used for hole conduction with positive charge, the more impurities are doped, the higher the hole concentration is, and the stronger the conductivity is. Specifically, the epitaxial layer 2 is composed of a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23 sequentially arranged, for example, the first semiconductor layer 21 is an N-type semiconductor, the second semiconductor layer 23 is a P-type semiconductor, and the first semiconductor layer 21 and the second semiconductor layer 23 form a P-N junction in the epitaxial layer 2, so that when a current is applied to the LED chip 4, electrons are pushed to a P region where the electrons recombine with holes and then emit energy in the form of photons.
Example three:
the third embodiment of the LED chip group 3 is provided in the invention, the third embodiment of the LED chip group 3 comprises three LED chips 4, the LED chips 4 are triangular, and the arrangement mode of the LED chips 4 in the LED chip group 3 adopts a triangular stacking mode; the distance Y between the adjacent LED chip groups 3 is larger than the distance X between the adjacent LED chips 4 in the LED chip groups 3; the epitaxial layer 2 comprises a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23 which are arranged in sequence; the active layer 22 may also be said to be an active layer or a light emitting layer; the active layer 22 may be a multi-quantum well layer or a single quantum well layer formed by alternately stacking a plurality of well layers and a plurality of barrier layers, but not limited thereto. The first semiconductor layer 21 is an N-type semiconductor layer or a P-type semiconductor layer, and the second semiconductor layer 23 is an N-type semiconductor layer or a P-type semiconductor layer; different types of semiconductor layers are used for the first semiconductor layer 21 and the second semiconductor layer 23; the N-type semiconductor layer is composed of an N-type semiconductor, the N-type semiconductor is a semiconductor mainly based on electron conduction, the concentration of free electrons is far greater than that of holes, the free electrons are mainly provided by impurity atoms, and the holes are formed by thermal excitation. The more impurities are doped, the higher the concentration of free electrons and the stronger the conductivity. The P-type semiconductor layer is composed of a P-type semiconductor, the P-type semiconductor is mainly used for hole conduction with positive charge, the more impurities are doped, the higher the hole concentration is, and the stronger the conductivity is. Specifically, the epitaxial layer 2 is composed of a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23 sequentially arranged, for example, the first semiconductor layer 21 is a P-type semiconductor, the second semiconductor layer 23 is an N-type semiconductor, and the first semiconductor layer 21 and the second semiconductor layer 23 form a P-N junction in the epitaxial layer 2, so that when a current is applied to the LED chip 4, electrons are pushed to a P region where the electrons recombine with holes and then emit energy in the form of photons.
The invention provides a manufacturing method of an LED chip group, which comprises the following steps:
forming an epitaxial layer on a growth substrate;
the epitaxial layer is patterned, so that the epitaxial layer forms at least two LED chip groups, wherein each LED chip group comprises at least two LED chips, the distance between the LED chip groups is a first distance, the distance between the at least two LED chips is a second distance, and the first distance is larger than the second distance.
Therefore, the epitaxial layer is cut by taking the group as the minimum unit to obtain a plurality of groups of LED chip groups, so that the cutting yield and efficiency are improved, and the problem of poor cutting caused by the fact that the size of the LED chip is reduced is effectively solved.
As shown in fig. 6, in the present invention, the epitaxial layer includes a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially disposed; the first semiconductor layer is an N-type semiconductor layer or a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer or a P-type semiconductor layer, and the first semiconductor layer is tightly attached to the growth substrate.
Further, different types of semiconductor layers are respectively adopted as the first semiconductor layer and the second semiconductor layer.
Specifically, as shown in fig. 2, a plurality of LED chip groups 3 are disposed on the epitaxial layer 2, and a distance Y between adjacent LED chip groups 3 is greater than a distance X between adjacent LED chips 4 in the LED chip groups 3; that is, the group-to-group distance between adjacent LED chip groups is Y, and the distance between adjacent LED chips 4 in adjacent LED chip groups is X, where the distance X needs to correspond to the subsequent process distance, such as the chip distance planned by the backplane, and the distance Y is the distance required for cutting.
Further, the LED chip group 3 includes three or three times as many LED chips 4, and the shape of the LED chips 4 may be rectangular or triangular.
In the invention, the LED chip groups 3 are grouped by setting different distances among the LED chip groups 3 on the substrate 1, namely, the distance between the groups is greater than the distance between the LED chips 4 in the groups, thereby improving the cutting yield and efficiency and effectively improving the problem of poor cutting caused by the reduction of the LED size.
Example four:
in the present invention, as shown in fig. 3, a fourth embodiment of a display screen is provided, where the fourth embodiment includes a growth substrate 1 and an LED chip set 3, an epitaxial layer 2 is disposed on the growth substrate 1, the LED chip set 3 includes three LED chips 4, the LED chips 4 are rectangular, and the arrangement of the LED chips 4 in the LED chip set 3 is in a side-by-side manner; the distance Y between the adjacent LED chip groups 3 is larger than the distance X between the adjacent LED chips 4 in the LED chip groups 3; the epitaxial layer 2 comprises a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23 which are arranged in sequence; the active layer 22 may also be said to be an active layer or a light emitting layer; the active layer 22 may be a multi-quantum well layer or a single quantum well layer formed by alternately stacking a plurality of well layers and a plurality of barrier layers, but not limited thereto. The first semiconductor layer 21 is an N-type semiconductor layer or a P-type semiconductor layer, and the second semiconductor layer 23 is an N-type semiconductor layer or a P-type semiconductor layer; the first semiconductor layer 21 and the second semiconductor layer 23 are made of different types of semiconductor layers, wherein the N-type semiconductor layer is made of an N-type semiconductor, the N-type semiconductor is mainly an electron-conductive semiconductor, the concentration of free electrons is far greater than that of holes, the free electrons are mainly provided by impurity atoms, and the holes are formed by thermal excitation. The more impurities are doped, the higher the concentration of free electrons and the stronger the conductivity. The P-type semiconductor layer is composed of a P-type semiconductor, the P-type semiconductor is mainly used for hole conduction with positive charge, the more impurities are doped, the higher the hole concentration is, and the stronger the conductivity is. Specifically, the epitaxial layer 2 is composed of a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23 sequentially arranged, for example, the first semiconductor layer 21 is a P-type semiconductor, the second semiconductor layer 23 is an N-type semiconductor, and the first semiconductor layer 21 and the second semiconductor layer 23 form a P-N junction in the epitaxial layer 2, so that when a current is applied to the LED chip 4, electrons are pushed to a P region where the electrons recombine with holes and then emit energy in the form of photons.
Example five:
as shown in fig. 4, a fifth embodiment of a display screen is provided, where the fifth embodiment includes a growth substrate 1, an epitaxial layer 2 and an LED chip set 3, the epitaxial layer 2 is disposed on the growth substrate 1, the LED chip set 3 includes three LED chips 4, the LED chips 4 are rectangular, and the arrangement of the LED chips 4 in the LED chip set 3 is in a triangular stacking form; the distance Y between the adjacent LED chip groups 3 is larger than the distance X between the adjacent LED chips 4 in the LED chip groups 3; the epitaxial layer 2 comprises a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23 which are arranged in sequence; the active layer 22 may also be said to be an active layer or a light emitting layer; the active layer 22 may be a multi-quantum well layer or a single quantum well layer formed by alternately stacking a plurality of well layers and a plurality of barrier layers, but not limited thereto. The first semiconductor layer 21 is an N-type semiconductor layer or a P-type semiconductor layer, and the second semiconductor layer 23 is an N-type semiconductor layer or a P-type semiconductor layer; different types of semiconductor layers are used for the first semiconductor layer 21 and the second semiconductor layer 23, respectively. The N-type semiconductor layer is composed of an N-type semiconductor, the N-type semiconductor is a semiconductor mainly based on electron conduction, the concentration of free electrons is far greater than that of holes, the free electrons are mainly provided by impurity atoms, and the holes are formed by thermal excitation. The more impurities are doped, the higher the concentration of free electrons and the stronger the conductivity. The P-type semiconductor layer is composed of a P-type semiconductor, the P-type semiconductor is mainly used for hole conduction with positive charge, the more impurities are doped, the higher the hole concentration is, and the stronger the conductivity is.
Example six:
as shown in fig. 5, a sixth embodiment of the display screen is provided, where the sixth embodiment includes a growth substrate 1, an epitaxial layer 2 and an LED chip set 3, the epitaxial layer 2 is disposed on the growth substrate 1, the LED chip set 3 includes three LED chips 4, the LED chips 4 are triangular, and the arrangement of the LED chips 4 in the LED chip set 3 is in a triangular stacking form; the distance Y between the adjacent LED chip groups 3 is larger than the distance X between the adjacent LED chips 4 in the LED chip groups 3; the epitaxial layer 2 comprises a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23 which are arranged in sequence; the active layer 22 may also be said to be an active layer or a light emitting layer; the active layer 22 may be a multi-quantum well layer or a single quantum well layer formed by alternately stacking a plurality of well layers and a plurality of barrier layers, but not limited thereto. The first semiconductor layer 21 is an N-type semiconductor layer or a P-type semiconductor layer, and the second semiconductor layer 23 is an N-type semiconductor layer or a P-type semiconductor layer; the first semiconductor layer 21 and the second semiconductor layer 23 are made of different types of semiconductor layers, wherein the N-type semiconductor layer is made of an N-type semiconductor, the N-type semiconductor is mainly an electron-conductive semiconductor, the concentration of free electrons is far greater than that of holes, the free electrons are mainly provided by impurity atoms, and the holes are formed by thermal excitation. The more impurities are doped, the higher the concentration of free electrons and the stronger the conductivity. The P-type semiconductor layer is composed of a P-type semiconductor, the P-type semiconductor is mainly used for hole conduction with positive charge, the more impurities are doped, the higher the hole concentration is, and the stronger the conductivity is. Specifically, the epitaxial layer 2 is composed of a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23 sequentially arranged, for example, the first semiconductor layer 21 is a P-type semiconductor, the second semiconductor layer 23 is an N-type semiconductor, and the first semiconductor layer 21 and the second semiconductor layer 23 form a P-N junction in the epitaxial layer 2, so that when a current is applied to the LED chip 4, electrons are pushed to a P region where the electrons recombine with holes and then emit energy in the form of photons.
In the present invention, there is also provided a display panel manufacturing method, including the steps of:
manufacturing and forming a bonding pad 6 on the back plate 5;
transferring the groups of the LED chips 4 to a bonding pad 6;
each LED chip group 3 is converted into the same RGB three-color LED chip 4 by using phosphor or quantum dots 8, and then a packaging adhesive material is coated. Wherein, the fluorescent powder can be YAG fluorescent powder which is mainly composed of aluminum oxide and yttrium oxide.
Example seven:
specifically, as shown in fig. 7 to 11, the present invention provides an embodiment seven of a display panel manufacturing method, including:
1. a bonding pad 6 is formed on the back plate 5, and a solder paste 7 is printed on the bonding pad 6, wherein the solder paste 7 has excellent conductivity, can meet the printing requirement on a bonding pad with a small size, and is convenient for subsequent packaging;
2. transferring the plurality of LED chip groups 3 onto the bonding pads 6, wherein each LED chip group 3 corresponds to the bonding pad 6 on the back plate 5 through die bonding; reflow soldering treatment is carried out, so that each LED chip group 3 is fixed on the back plate 5;
3. each LED chip group 3 is converted into the same RGB three-color LED chip 4 by using phosphor or quantum dots 8, and then a packaging adhesive material is coated.
The Die bonding process is also called Die Bond or Die attach, i.e., the LED chip 4 is bonded to the designated area of the bonding pad 6 by conductive adhesive or insulating adhesive to form a thermal or electrical path; the reflow process is performed by applying solder paste 7 to the substrate 5 and then soldering with hot air blown from a reflow soldering machine.
In the present application, the LED uses phosphor for color display, which converts each LED chip set 3 into the same RGB three-color LED chips 4; the quantum dots 8 are manufactured by using a quantum dot technology, and the emission wavelength of the quantum dots is adjustable and the emission spectral band is very narrow, so that color display is facilitated.
Specifically, at present, the die bonding process of the Mini LED or Micro-LED display screen needs to transfer the LED chips to the back plate, and the number of the required LED chips is very large, which has very high requirements on the transfer yield and efficiency; the seventh embodiment comprises the steps of solder paste printing, die bonding, reflow soldering, glue sealing and the like, and comprises the following steps:
step S11, providing a back plate 5, and printing solder paste 7 on the pads 6 on the back plate 5, wherein the solder paste 7 has excellent conductivity, and can satisfy the requirement of printing on small-sized pads, and is convenient for subsequent packaging;
step S12, transferring the plurality of LED chip sets 2 to the backplane 5 for die bonding, as shown in fig. 9, in the die bonding process, transferring each LED chip set 2 to the backplane 5, which increases the transfer yield and efficiency compared to the conventional single chip transfer method;
step S13, after die bonding, performing reflow soldering to fix the LED chip sets 2 on the backplane 5, as shown in fig. 10, after reflow soldering, if there is a lamp failure, a cold solder, or other defects, the LED chip sets 2 can be directly removed, and then a group is replenished again, so as to increase the repair yield and efficiency;
step S14, performing encapsulation, as shown in fig. 11, in the encapsulation process, phosphor powder or quantum dots 8 are used to convert each group of LED chip sets 3 into the same RGB three colors, and then the encapsulation material is coated, that is, the LED chip sets 3 are coated with transparent encapsulation for encapsulation.
Example eight:
as shown in fig. 12 to 16, an eighth embodiment of a display panel manufacturing method according to the present invention includes:
1. manufacturing a bonding pad 6 on the back plate 5, wherein a film metal layer is formed on the back plate 5, and patterning is performed on the film metal layer through gluing, exposure, development, etching and stripping, so that a metal type bonding pad 6 corresponding to a metal panel 41 of an LED chip 4 in the LED chip group 3 is formed;
2. transferring the plurality of LED chip groups 3 to the bonding pads 6, wherein the LED chip groups 3 are transferred to the back plate 5 by using a transfer device 91, the metal panel 41 of the LED chips 4 in the LED chip groups 3 corresponds to the bonding pads 6 on the back plate 5, and then the LED chips 4 and the back plate 5 are subjected to metal bonding through the metal panel 41 and the bonding pads 6;
3. each LED chip group 3 is converted into the same RGB three-color LED chip 4 by using phosphor or quantum dots 8, and then an encapsulation adhesive material is coated, that is, transparent encapsulation adhesive is coated on the LED chip group 3 for encapsulation.
Specifically, at present, the Mini LED display screen die bonding process needs to transfer the LED chips to the back plate, and the number of the required LED chips is very large, which requires very high transfer yield and efficiency; as shown in fig. 12, an eighth embodiment includes steps of fabricating metal pads 6 on the backplane 5, led transferring, bonding, and molding; the method comprises the following steps:
step S21, providing a back plate 5, and forming a metal layer on the back plate 5, as shown in fig. 13, patterning the metal layer by gluing, exposing, developing, etching, and peeling to form a metal type pad 6 corresponding to the metal panel 41 of the LED chip 4;
step S22, transferring different groups of LED chips 4 onto the backplane 5 by using the corresponding transferring devices 91, as shown in fig. 14, so that the metal panel 41 and the pads 6 of the backplane 5 correspond to each other, which increases the transferring yield and efficiency compared with the conventional single chip transferring method;
step S23, carrying out metal bonding on the LED chip 4 and the back plate 5 through the metal panel 41 and the bonding pad 6; as shown in fig. 15, the bonding metal of the metal panel 41 and the bonding pad 6 includes, but is not limited to, tin/gold, silver/indium, indium/nickel, tin/copper, tin/silver, gold/indium, tin/indium, or alloys thereof; after bonding, if defects such as lamp failure, insufficient soldering and the like exist, the LED chip groups 3 can be directly removed, and then one LED chip group is replenished, so that the repair yield and efficiency can be increased;
step S24, performing a sealing process, as shown in fig. 16, in the sealing process, the LED chip sets 3 of each group are first converted into the same RGB three colors by using the fluorescent powder or the quantum dots 8, and then the encapsulation material is coated.
The invention has the following advantages:
1. the cutting yield and efficiency are improved, and the problem of poor cutting caused by the fact that the size of the LED chip is reduced is effectively solved;
2. the yield and the efficiency of mass transfer and repair are improved;
3. in the process of manufacturing the back plate 5, after reflow soldering, if there are defects such as dead lamp and insufficient solder, the group of LED chip sets 3 can be directly removed, and then a group is replenished, so that the repair yield and efficiency can be increased.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts of the present invention. The foregoing is only a preferred embodiment of the present invention, and it should be noted that there are objectively infinite specific structures due to the limited character expressions, and it will be apparent to those skilled in the art that a plurality of modifications, decorations or changes may be made without departing from the principle of the present invention, and the technical features described above may be combined in a suitable manner; such modifications, variations, combinations, or adaptations of the invention using its spirit and scope, as defined by the claims, may be directed to other uses and embodiments.
Claims (10)
1. A method of manufacturing an LED chip set, comprising:
forming an epitaxial layer on a growth substrate;
patterning the epitaxial layer to enable the epitaxial layer to form at least two LED chip groups, wherein each LED chip group comprises at least two LED chips, the distance between the LED chip groups is a first distance, the distance between the at least two LED chips is a second distance, and the first distance is larger than the second distance.
2. The method according to claim 1, wherein the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer sequentially arranged; the first semiconductor layer is an N-type semiconductor layer or a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer or a P-type semiconductor layer, the first semiconductor layer and the second semiconductor layer are different types of semiconductor layers, and the first semiconductor layer is tightly attached to the growth substrate.
3. The method of claim 1, wherein the LED chip is rectangular in shape.
4. The method as claimed in claim 1, wherein the group of LED chips comprises three or a multiple of three of the LED chips.
5. The method as claimed in claim 4, wherein the LED chips in the LED chip set are arranged in a side-by-side manner or a triangular stacking manner.
6. An LED chip set comprising an LED chip set made by the method of any one of claims 1-5.
7. A method for manufacturing a display screen, wherein the display screen comprises a back plate and an LED chip set manufactured by the method of any one of claims 1 to 5, and the method comprises the following steps:
manufacturing and forming a bonding pad on the back plate;
transferring a plurality of LED chip groups onto the bonding pads;
and converting each LED chip group into pixels capable of emitting red light, green light and blue light by using fluorescent powder or quantum dots, and coating an encapsulation adhesive material.
8. The method for manufacturing the display screen according to claim 7, wherein in the step of transferring the plurality of LED chip groups onto the bonding pads, the method comprises the following steps:
carrying out die bonding treatment, namely correspondingly arranging each LED chip group on a bonding pad on the back plate;
and performing reflow soldering treatment to fix each LED chip group on the backboard.
9. The method for manufacturing the display screen according to claim 7, wherein the step of forming the bonding pads on the back plate comprises the following steps:
and forming a film metal layer on the back plate, and patterning the film metal layer through gluing, exposing, developing, etching and stripping to form a metal type bonding pad corresponding to a metal panel of an LED chip in the LED chip set.
10. A display screen comprising a backplane and a group of LED chips made by the method of any of claims 7-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010183835.0A CN113410344A (en) | 2020-03-16 | 2020-03-16 | LED chip set, display screen and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010183835.0A CN113410344A (en) | 2020-03-16 | 2020-03-16 | LED chip set, display screen and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113410344A true CN113410344A (en) | 2021-09-17 |
Family
ID=77676813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010183835.0A Pending CN113410344A (en) | 2020-03-16 | 2020-03-16 | LED chip set, display screen and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113410344A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115207186A (en) * | 2022-09-15 | 2022-10-18 | 江西兆驰半导体有限公司 | Mini-LED chip and preparation method thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762222A (en) * | 2014-01-24 | 2014-04-30 | 中国科学院半导体研究所 | Modularized array high-voltage LED chip and method for manufacturing modularized array high-voltage LED chip |
| CN103840042A (en) * | 2013-12-12 | 2014-06-04 | 广东威创视讯科技股份有限公司 | Method for manufacturing LED display screen |
| US9653642B1 (en) * | 2014-12-23 | 2017-05-16 | Soraa Laser Diode, Inc. | Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes |
| CN206505686U (en) * | 2017-02-15 | 2017-09-19 | 佛山市国星光电股份有限公司 | The LED display modules and display screen of a kind of triangular lattice arrangement |
| CN109148676A (en) * | 2018-08-29 | 2019-01-04 | 佛山市国星半导体技术有限公司 | A kind of high density micro display LED component and preparation method thereof |
| CN109285925A (en) * | 2018-10-18 | 2019-01-29 | 佛山市国星半导体技术有限公司 | Full-color imaging LED chip of one kind and preparation method thereof |
| CN109411455A (en) * | 2018-09-27 | 2019-03-01 | 佛山市国星光电股份有限公司 | A kind of LED display unit group and display panel |
| CN109461727A (en) * | 2017-09-06 | 2019-03-12 | 弘凯光电(深圳)有限公司 | A kind of moulding manufacture method showing screen and LED module |
| DE112017004029T5 (en) * | 2016-08-11 | 2019-05-02 | Lumens Co., Ltd. | LED MODULE AND METHOD FOR THE PRODUCTION THEREOF |
| WO2019217976A2 (en) * | 2018-04-26 | 2019-11-14 | QMAT, Inc. | Patterning on layer transferred templates |
-
2020
- 2020-03-16 CN CN202010183835.0A patent/CN113410344A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103840042A (en) * | 2013-12-12 | 2014-06-04 | 广东威创视讯科技股份有限公司 | Method for manufacturing LED display screen |
| CN103762222A (en) * | 2014-01-24 | 2014-04-30 | 中国科学院半导体研究所 | Modularized array high-voltage LED chip and method for manufacturing modularized array high-voltage LED chip |
| US9653642B1 (en) * | 2014-12-23 | 2017-05-16 | Soraa Laser Diode, Inc. | Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes |
| DE112017004029T5 (en) * | 2016-08-11 | 2019-05-02 | Lumens Co., Ltd. | LED MODULE AND METHOD FOR THE PRODUCTION THEREOF |
| CN206505686U (en) * | 2017-02-15 | 2017-09-19 | 佛山市国星光电股份有限公司 | The LED display modules and display screen of a kind of triangular lattice arrangement |
| CN109461727A (en) * | 2017-09-06 | 2019-03-12 | 弘凯光电(深圳)有限公司 | A kind of moulding manufacture method showing screen and LED module |
| WO2019217976A2 (en) * | 2018-04-26 | 2019-11-14 | QMAT, Inc. | Patterning on layer transferred templates |
| CN109148676A (en) * | 2018-08-29 | 2019-01-04 | 佛山市国星半导体技术有限公司 | A kind of high density micro display LED component and preparation method thereof |
| CN109411455A (en) * | 2018-09-27 | 2019-03-01 | 佛山市国星光电股份有限公司 | A kind of LED display unit group and display panel |
| CN109285925A (en) * | 2018-10-18 | 2019-01-29 | 佛山市国星半导体技术有限公司 | Full-color imaging LED chip of one kind and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115207186A (en) * | 2022-09-15 | 2022-10-18 | 江西兆驰半导体有限公司 | Mini-LED chip and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI682436B (en) | Massive transferring method of micro leds and light-emitting panel module using the method | |
| US10644195B2 (en) | Manufacturing method of light emitting diode device and light emitting diode device having light emitting units with each light emitting unit including second sub light emitting unit in tandem with first sub light emitting unit | |
| CN107195654B (en) | Full-color semiconductor light-emitting micro-display and manufacturing process thereof | |
| TW201947737A (en) | Light-emitting device and manufacturing method thereof | |
| US20060261292A1 (en) | Light emitting device package and method for manufacturing the same | |
| CN110112148A (en) | Light emitting diode module and its manufacturing method, display device | |
| US20100081220A1 (en) | Method for manufacturing light-emitting diode | |
| CN110993647B (en) | Method for manufacturing active matrix display device | |
| CN109920885B (en) | Mass transfer and color conversion method for MicroLED | |
| CN110676282A (en) | Full-color mu LED micro-display device without electrical contact and manufacturing method thereof | |
| TW202139344A (en) | Method for transferring micro light emitting diodes | |
| CN114334923A (en) | Display screen, Micro-LED display substrate and preparation method thereof | |
| TW200939450A (en) | LED chip package structure manufacturing method for preventing light-emitting efficiency of fluorescent powder from being decreased due to high temperature | |
| TW201104914A (en) | Optoelectronic system | |
| US8044416B2 (en) | Method for fabricating high-power light-emitting diode arrays | |
| US11189602B2 (en) | Light-emitting device | |
| KR101179579B1 (en) | LED light module and manufacturing methode of thesame | |
| CN113629095B (en) | Light emitting display device and method for manufacturing light emitting display device | |
| CN114843317A (en) | Inorganic-organic LED mixed color display device and preparation method thereof | |
| CN113410344A (en) | LED chip set, display screen and manufacturing method thereof | |
| WO2022082903A1 (en) | Full-color micro led array structure and preparation method therefor | |
| CN103474557A (en) | Method for manufacturing light-emitting diode array | |
| TWI685987B (en) | Micro-die module transfer method | |
| CN209929308U (en) | Display panel | |
| KR20040009818A (en) | A micro chip array including light emitting diode and a module for a full-color display including fluorescent light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210917 |