TW201104914A - Optoelectronic system - Google Patents

Abstract

The application relates to a system scale optoelectronics structure and its manufacture method thereof including providing a temporary substrate, a plurality of un-packaged optoelectronics element connected to the temporary substrate and formed a plurality of intervals. An adhesive material is filled in the intervals and covers the un-packaged optoelectronics element. A permanent substrate is bonded to the un-packaged optoelectronics element by the adhesive material, and the temporary substrate is removed.

Description

201104914 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to an optoelectronic system, and more particularly to an integrated illuminating system. [Prior Art] The package structure of a photovoltaic element such as a light-emitting diode is mainly produced by a complicated single-chip package process. Unpackaged optoelectronic components are packaged and then combined with other

A sub-element such as a capacitor, an inductor or the like and/or a non-electronic component can form a photo-electric system. However, under the trend of miniaturization and thinning of electronic consumer products, the development of photovoltaic components has also moved toward smaller package sizes. Among them, Chip-Level Package (CLP) is one of the expected ways of designing semiconductors and optoelectronic components. SUMMARY OF THE INVENTION According to an embodiment of the present invention, a system-level photovoltaic structure and a fabrication method are provided. The method of fabricating the method includes at least: providing a temporary substrate; and providing a plurality of optical readings on the substrate and forming a plurality of walkway areas; the fill-up fills the walkway area to cover the photovoltaic elements; provides a permanent substrate to bond the plurality of components by the glue; and removes the temporary substrate. Embodiments of the system ιοί==. _ The present invention - the embodiment of the photoelectric configuration in the carrier 10 Lee:: The initial system unit paste connection ^, the sigh according to the needs of the establishment is not limited to this, use ^ The sequence of execution of each step or the choice of the field can be arranged according to the manufacturing environment or conditions. 201104914 In detail, a photovoltaic system 100 in accordance with an embodiment of the present invention includes two or more system units 30 to form a transmission, conversion network of light energy and electrical energy. System unit 30 is located in the network and provides at least one of light or motor capability. For example, the photovoltaic system 1 can receive signals, power to output light, or receive light to output electrical energy and signals. In application, the photoelectric system 100 can be used for illumination, image display, image recognition, image reproduction, power output, data storage, machining, and the like. Specifically, the photovoltaic system 1 is a light emitting diode (LED), a photodiode, a photoresistor (ph〇t〇resister), a laser (laser), and an outside emitter (infrared emitter). And at least one of the system units 30 having photovoltaic power, such as a solar cell, is integrated, integrated, and stacked. Further, the photovoltaic system 100 can selectively accommodate the non-photovoltaic system unit 30 such as a resistor, a valley, an inductor, a diode, or an integrated circuit. The carrier 10 provides a growth and bearing basis for the system unit 30. The candidate materials include but not Pf testament (Ge), gallium arsenide (GaAS), indigo wall (Inp), sapphire (Sapphire), tantalum carbide (SiC), bismuth (Si), and aluminate chain (LiA1). 〇 2), zinc (ZnO), gallium nitride (GaN), aluminum nitride (A1N), metal, glass, composite, diamond, CVD diamond, and diamond-like carbon (Diamond-Like Carbon; DLC) and so on. In the embodiment of the invention - or more than two or more system elements 3 () are formed on top of the carrier 1G. Specifically, the carrier 10 is the basis for the construction of this 30. For example, one or two of her system units '4m'm m (self-assembly) ^ are formed above Jian 10 . In addition, in addition to the upper-level embossing, _, grinding, lithography, side, heat _ can also be selected to complete the system unit according to an embodiment of the invention, the system unit 3 The green crystal wire semiconductor layer can be separated from the single 7L3G by the formation of a trench or by a dielectric. 201104914 ^The electrical layout of the three rooms (eleetrieal layGUt) can still be achieved by using the internal patents of the company. For related literature, please refer to the Taiwanese target number of the applicant and No. 1249148, which is cited as part of this case. The body unit 3 〇 includes at least a first electrical layer and a second electrical layer. The first electrical layer and the second electrical layer are different from each other, or are different in polarity or dopant, or are respectively provided for providing a single layer or a plurality of layers of electrical and semiconducting materials ("multilayer" refers to The layer or the second layer is the same as the following.), and the electrical selection may be a combination of p-type, n-type, and i-type to any combination. The conversion portion is located in the first electrical layer and the second electrical layer ^ ^ is a region where electrical energy and light energy may be converted or transferred. Electrical energy or light-emitting energy is such as a light-emitting diode, a liquid crystal display, an organic light-emitting diode, a light energy conversion or an electric energy-generating system such as a solar cell or a photodiode. The system unit 30 of another embodiment of the invention is a light-emitting diode. The spectrum can be τ»rounded by changing the physical or chemical properties of the semiconductor single layer or layers. The materials used for ^* are such as AiGainp series, AlGaInN series, and Zinc oxide series. Converting the structure of the 纟cr, such as a single heterostructure (Singleheter〇 structure; SH), double heterostructure, doubleheterostructure (DH), double-sided double heterostructure (DDH), or multi-layer quantum wells (multi_quantum —; MQW). Furthermore, adjusting the logarithm of the quantum well can also change the wavelength of the illumination. - In the %-embodiment of the present invention, the secret unit 3G on the '- or the two-gauge is completed on the ίο. The 'foot' carrier 1G and the button unit 3G are separated from each other independently before the association is established. Specifically, the carrier 1 (M system serves as a support for the system unit 3). For example, one or more system units 3 are fixed to the carrier by glue, metal, pressure, fresh connection + segment. For more information, please refer to Taiwan Patent Nos. 311287, 456058, 474034, and 493286 of the application No. 6 of this application, which are also cited as part of this case. In addition, in the process of establishing the relationship, The system unit 30 can be placed on the carrier 1〇 or manually. As shown in Fig. 3, the completed or semi-finished photovoltaic system 1 can be selectively further connected to an external body. The system can be connected to the photovoltaic system 1〇〇201104914=-one side or both sides. In several embodiments, the photovoltaic system lake system is connected to the external body 1〇a on the outer side of the junction 60; Connected to the external body 1〇b with respect to the outer side of =60; or the photoelectric system 1 is connected to the external body 1〇a, 1% by the external side and the opposite side of the photoelectric system 1 Department, 100 and the external body are not limited to the above aspects, photoelectric system Qing ^ ° 5 choose any ~ aA Y u device, H - structure, - composition, or the above-mentioned selection - circuit Mixian Hi electric green wire read, -_ component, - sound example # 'pure unit 3G shop ig is still formed with a money unit 3g and For the purpose of ig. Here, "short-term one" 2 "The manufacture, delivery, or unsealing of the ϋΓ 光电 光电 光电 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 This layer or structure 20 is not separated by a phase separation metal such as a gel, tape, metal monolayer, s θ σ gold, semiconductor, fixture, or any combination of the above. In addition, #士构20 Φ ^People drought, stress relief, heat conduction, heat insulation, etc. For example, layer mediation; interposer between the reflective surface and the carrier 10. The upper t-layer and the lower layer have the function of de-reflection. The above other functions, such as the connection, diffusion barrier and other functions. 1, he knife this specific secondary load implementation, the secret unit 3G and material 4G can be combined with a map can be implemented in Figure 2A ~ Under the process of the second diagram, the 2C diagram, or the 20th step, the H is tied to the system list after the step of Figure 2B. 30 and material 40, ° for the sake of Lai Yu - she is a reliable towel structure. Sub-carrier 201104914 ^ ^ rL#i! 5〇a ^ 匕 anti-reflection, electricity, machine barrier, diffusion barrier, function should be The achievement is not based on the attachment of the second to =; the circumference of the human - 5 ^ itself, the composition of the geometry, the processing of the t ° ^ ^ m ^ i two straight shield structure. This light surface is like the system unit 30 : ϋ 4° 接 contact: Close to the environment. Specifically, anti-t, convex; refractive mask structure such as mirror surface, regular concave surface, irregular concave = fold, differential interface, photonic crystal, concave lens At least one of a convex lens, a phenanthrene lens, and an opaque surface. The figure illustrates an electrical connection pattern of the photovoltaic system 1 to 〇 according to an embodiment of the present invention. Here, the system unit % has two electrodes 301 in the direction of the 冋 '. The specific system unit 3 of the structure is a jade body, and more specifically, is formed in an insulator such as sapphire, an optical body. . Figure (〇+ 'The storage of the two system units is electrically connected in series by the positive and negative wires of the wire; in Figure (b), between the two system units 30, the wire is connected to the positive electrode to form an electrical connection; Figure (〇中,二系统In the early 30th, the electrical connection is formed by connecting the negative electrode with the wire 6〇a. 1, 7, and 7 illustrate the photovoltaic system 1〇() to >, 2 [system unit 30] according to another embodiment of the present invention. For the specific embodiment, refer to the description of Fig. 6. However, in the present embodiment, the electrical connection between the system unit 3 is achieved by forming the internal connection 60b on the system unit 30. The internal connection 60b A forming method is formed on the set region of the system unit 30 to form an isolation region 6〇b, and a metal material is deposited later. 8 shows an electrical connection from the photovoltaic system 100 to the system unit 30 according to still another embodiment of the present invention. In the figures (a) and (b), the electrodes 3〇1 of the system unit 30 are adjusted or connected to substantially the same position, such as near 201104914 or just below the surface of the material 4 by electrical properties. Connect 6〇, for example line a = negative between system unit 30 The electrical connection is formed; the figure (8) t it 'connects the positive connection 60, for example: the winding around 6〇a7 & A second, and the first 30 are connected by the three equivalent circuits 0 in the left diagram of the electrical diagram卩Connect 6% 'connecting electrode 3〇1 to form a retention-μ, one of the electrical connections not in the political circuit diagram. [c), _ Μ 疋 疋 疋 〇 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 : : : : : : : : : First, as part of the 9th to the 2th two electric networks. The manufacturing method of the electric system 100 is simple according to another embodiment of the present invention, and the light step is disposed on the carrier 1G; Initially separated by 1 phase, and in the system single $2, the second unit 3 is connected to the sequence of execution of the above steps to form an electrical connection 60. The environment or the environment is limited to this, the user can实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施Wei yue light shirt system (10) medium to two; ί 〇 electrical connection state. In Figure (a), - Li Tong single open ί, but the reverse configuration of the system unit 3 〇 connection The pole and the negative pole are formed in parallel and form a parallel connection; the appropriate connection between the positive and negative poles of the electrical connection (9) forms an anti-parallel connection, but the proper arrangement of the coaxial arrangement of the 6G of the same configuration forms an anti-parallel connection. Figure t) - ^ ◦ 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接Restricting the implementation of this gamma, other implementations in this application == 201104914 ϊ ΐ ΐ ΐ ϊ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 In addition, the electrical connection between the sub-funits 3G can be referred to the other embodiments of the present invention. The chemical group, the physical formula, or the system thereof can be selected to be chemically, physically, or in any way. Wait. Adjacent to the difference. The width of the Β material 4G is preferably greater than the processing of the division means. The electrical connection architecture of the sub-group according to the embodiment is as exemplified, and is not intended to limit the present. The method of applying j, the method of applying, and the other embodiments of the present invention can be adopted in this embodiment without conflict. Figure (a) _ is connected across the isolation zone 60b, _ in the ^iτ miscellaneous connection 40 of the system 301 and the material element 叩^i) To the system t ί 〇 1 'the other end _ is mounted on the material 40. Fig. 4 shows that the 6% connection is not electrically connected to the system unit 30 by the electrode 301, and is above the material. In Fig. 4, the 'electrical connection _ is not a single 71 3 _ 赖 ' and cross lion _, the rear frame 4 red as f 图 7 ′ in an embodiment of the invention 'optoelectronic system 100 is included or A subgroup grouped by recording. The number of systems and the connection methods in each subgroup can be the same or different. For example, the subgroups l〇〇a and l00c are stacked on top of the subgroup leg, wherein the subgroup implicitly includes four system units 3G; the subgroup legs include one system unit 3〇, the subgroup l〇OC includes two system units 3〇. Sub-groups can be electrically connected using solder, silver paste, or other suitable conductive materials. However, it is necessary to form an electrical connection between subgroups, and a simple structural relationship may also be established therebetween. However, the type or the number of the system unit 30 in the drawings are merely exemplary, and not to limit the embodiments of the present invention, and the system unit types and connection modes disclosed in other embodiments in the present application are not in conflict. It can be adopted for this embodiment. ’ 201104914 - Edge, showing a subgroup and its mid-system unit 30 on the same side. =α=0 0 6<Υ<Π7 Λ ο ~ ~ -Χ-0·4' °·4<Χ<0.5 >0.5<Χ<0.6> 1^2:260/600, 3〇·9 And/or Ο.9%. Specifically, 实施 /1000 of the embodiment. Fig. 14 (8) shows a system in accordance with the present invention. Each trapezoidal =;: is set as shown in the figure 'only its relative to: the second level = can move, that is, the station 罝; straight you touch or exceed the boundary of the material 40. For example, in the upper edge of the ff material 40 and/or the proximity, the connection, and the "invention, the illumination system, the sub-group exchange material, and the integrated source" can be '_〇a is 4 = 〇: f:? Block, - organic colloid, or two = block, a pottery fluorescein powder secret material 4 〇 private;; phase 1 &. For example The upper or the New Recorder Green Line unit is formed in the system, the screen (4), the deposition, or the materials 40a and 40b, the material 4〇a, the material 40b, and the light source. Figure (8) ^: m light direction, preferably, two materials two; 40b is arranged in the light source - light emitting a material 40b, or material 4〇a and preferably, in the direction of the material 40, but The department is not in direct contact with it, as shown in Figure 16, the private decision is collectively referred to as the light source from the embodiment); the color is 201104914. For the relevant implementation of the wavelength conversion material, refer to the above figure 15 (a) The wavelength conversion material can emit green light or yellow light. In the figure (b), the wavelength conversion material can emit red light and yellow light. (c) Yin, 矣 material emission Color light, wavelength conversion material in another area (4), the wavelength of the area turns ^ = 糸, the color of the escaping light, the wavelength conversion material of the other area emits red light, and the powder or the illusion of H Raw. & catch, _ should be the first indicator, some or several shots in the illumination system or subgroup; greater than the power of the red light system unit, for example, a few (8) clearly, illuminate =, 2 =, medium 1 · 5 / ι /. Such as the 17th light, and the material 40 is mixed with the right έ system single 30 series emission blue two 7 optional use. Example of red and yellow fluorescent such as = medium mixed with appropriate ratio The effective or active system in the group is 201104914 mixed with yellow fluorescent powder, and the material is mixed with red fluorescent powder. As shown in Figure 19 (a), in the lighting system or subgroup A system emits blue light, part of the system unit emits green light, and some of the elements emit red. As shown in Figure 19 (b), the illumination system or one of the system units Blue light is emitted, and the other part emits red light. The material 40b is configured in this two-part system. Above the element, there is a green fluorescent powder. As shown in Figure 19(4), the illumination system or subgroup, and some of the system units emit blue light, and the other part emits red light, and the material is 4〇b. It is disposed on the 'blue, light, and θ η fluorescent powders. As shown in Figure 19(4), the illumination system or sub-group 70 emits blue light, and the other part of the system unit emits color. First, the material 40b is disposed on a partial or partial blue light system mixed with green phosphor powder. ^ As shown in Figures 20(a) to 20(c), the illumination system or the effect or actuation system unit Blue light is emitted. In Figure (a): i0b==Light tr another material in another area 4_= ^ In Figure (8), the material of the - region is mixed with green and the material of the domain is 4〇b is mixed with red fluorescent Powder, and the two regions are 3 abundance, and the short-wavelength illuminating region is a longer-wavelength illuminating region. The near-m sm material is mixed with red and yellow fluorescing powder. The unit emits a person to perceive the perception, for example: = Green and red fluorescent powder material 40b, respectively, arranged in the system i °, infernal touch The efficiency of the filament, the recession is specially made or the continuation of the 'application' blue light with the appropriate ratio ΐ ί ί can produce cool white light; blue light with the appropriate proportion of yellow ΐϊ,, work color can produce warm Self-light. The ratio of blue light to red light power is about 2: 丨 ~ 5 : such as .2.5 : Bu 3 : Bu 3.5 : Bu 4 : Bu 4.5 : i. The work of green light and yellow light 201104914 = ^., 4 non; ^ = mid-month = 4 () and 4% of the size ratio and configuration area adjustment, exchange H month, - implementation method 'users can be based on the situation unit a system that can be fed to the path of (4)

i body two =: 4: b and the matching mode on the S heart, "block, ceramic block, dye, or 苴 更 更 3 3 3 3 3 3 3 3 3 3 3 3 3 21 (a) Figure 2 is a circuit relay of unit 1 or part of the unit 30. • Connect the system unit it3. ,71". /〒 circuit, photoelectric system or subgroup can be unified, financial, secret unit 3G' is a power supply system, system unit ^ in the case of the ancient, the performance of the axe, / firm, first, pay Frequency system, rectification system. specific

Su;ply;'SWMP), the component is limited, or the two hunger 兀 兀 兀 非 非 非 非 非 非 非 非 非 非 非 , , , , , , , 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域 域The flm provides a carrier ig (also referred to as a temporary layer on the temporary substrate 1G in this embodiment in a spin coating, a button or the like) to form a layer or structure 20 (also referred to as a first connection in this embodiment). And can be placed and connected to the first connecting layer 20 by a Pick & Place system system unit 30 (also referred to as a photovoltaic element in this embodiment), and in multiple layers The spacing area of the photoelectric 70 pieces 30 forms a plurality of aisle areas 304, wherein the alignment accuracy when the photoelectric elements 30 are placed is mainly determined by the selection placement system, for example, error=super, 15哗. The above photoelectric element 3〇 can be a light-emitting diode, the structure of which may include a substrate 303, a semiconductor crystal layer formed on the substrate, 3〇2 and 13 201104914, the material conductor layer 302 may include a “conducting type 4+ff layer, An active layer, and a second conductive type semiconductor layer. Further, the substrate 303 may Optionally removed in the manufacturing process: in comparison with at least one electrical connection layer 20 of the photovoltaic element 30. The plurality of photovoltaic elements 3 〇 can emit light having the same or different wavelengths, and the illumination range thereof can be From ultraviolet light to infrared light.

The material of the temporary substrate 10 may be selected from the group consisting of silica, glass, quartz, ceramic, alloy or printed circuit board (PCB); the first connected material may be selected from materials such as a heat transfer belt ( Thermal one), UVi*eleasetape, π-release tape, heat-resistant tape or blue film; substrate 3〇3 of the above-mentioned photovoltaic element, material can be selected from bribe stone (Sapphire) , carbon cut (Sic), zinc oxide (Zn), gallium nitride (GaN) cut, glass, quartz, or ceramic high thermal conductivity substrate; the first conductive type semiconductor layer, active layer and In the second conductivity type, the material of the conductor layer contains - or more than a substance f selected from the group consisting of gallium (Ga), indium (A1), indium (in), arsenic (As), phosphorus (p), and nitrogen (N). And the group formed by Shi Xi (si).

Then, as shown in FIG. 23B, a material 40 (specifically, a viscous rubber material in the present embodiment) is provided to fill the aisle region 304 of the plurality of photovoltaic elements 3, and cover the plurality of photovoltaic elements 3 The surface of the first connection layer 20 that is not covered by the photovoltaic element. The above-mentioned adhesive rubber material can be formed by spin coating, printing or mold filling, and the adhesive material can also be an elastic material, and the material can be selected from the group of silicin. (6)), Shixi resin (base resm), silicone, elastic PU, porous pu, acrylic rubber (acrylic rubber) or grain cutting glue, such as blue film or UV glue. In this embodiment, a polishing process may be performed to planarize the surface of the plurality of photovoltaic elements 30, and the surface of the photovoltaic element 3 is not excessively generated (〇ver£j〇w). Or a viscous adhesive 40. Subsequently, as shown in FIG. 23C, a carrier 5〇 (also referred to as a permanent substrate in this embodiment) is provided, and is combined with a plurality of lights 14 coated with a viscous adhesive material. Bonding 'this joining method can be--hot pressing process. In the preferred embodiment, the water-repellent substrate 50 and the substrate 303 of the above-mentioned photovoltaic element 30 are directly connected to each other. The material of the water substrate i can be Mengjiao (-, glass, stone, ceramic, alloy or printed circuit board). (PCB). The second substrate shown in Figure 23D can be removed by laser stripping, heating and separation of the film, and the first layer of the adhesive layer is removed. _ 301 of a plurality of photovoltaic elements 30 and a portion of the semiconductor epitaxial layer 302. As shown in Fig. 23, the side 61 of the yellow wire bonding and wire bonding (in the present embodiment, specifically a plurality of wires) is ί 3 ί The electrode of the cow 30 is connected in series with the plurality of photovoltaic elements, and the material of g iffί60 can be gold, metal, alloy or multi-layer metal to form a system-level photovoltaic structure. ϋ24 (The figure is made according to another embodiment of the invention) 2. In the same way as the embodiment of Fig. 23, the Yuanshimei Cup is the same as the above. As shown in Fig. 24A, 'providing a temporary substrate 1G for spin coating, evaporation or printing, etc. The way 'the silk is sticky - the connecting layer 20, and can The plurality of wires 30w are placed on the first connecting layer 20 by a pick-and-place 2', and a plurality of track regions are formed in the spaced regions of the plurality of photovoltaic devices 30. The accuracy is not limited to the tolerance of the pick-and-place system. For example, the photo-electric component 3G may be a light-emitting diode having a structure in which a semiconductor crystal layer and at least one electrode 301 are formed on the substrate. The semiconductor crystallite 35302 may comprise a -first conductivity type semiconductive layer 'and a second conductivity type to have at least one electrode 301 of the layer contact H30 and the first connection layer 亍 photovoltaic element 30 may emit the same or different The wavelength of light, from the first to the spine can be from ultraviolet light to infrared light. The material of the temporary substrate 1 is selected from the group consisting of silica, glass, 15 201104914 quartz, ceramic, alloy or printed circuit board (PCB); the material of the first connecting layer 2 can be selected from tape, for example Heat removal tape (therma) release tape, UV release tape, chemical release tape, heat resistant tape, blue film or metal; the material of the above-mentioned photovoltaic element 3 基板 substrate 303 can be Selected from sapphire (Sapphire), carbonized stone (Si〇, zinc oxide yttrium (?0), gallium nitride (GaN) or tantalum, glass, quartz, GaAs, or ceramic heat-conductive substrate, the above-mentioned photovoltaic element 3〇 The material of the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer comprises one or more substances selected from the group consisting of gallium (Ga), Lu (A1), indium (in), arsenic (As), and phosphorus. (7), nitrogen (N) and Shi Xi (Si) group. Further, as shown in Fig. 24A, in the system-level photovoltaic structure of the present invention, the call may first be coated with a fluorescent material p. The above-mentioned photovoltaic element 3〇. By the average coating of the fluorescent material, it can be mentioned a stable white light source and reducing the difference in white light of each of the photovoltaic elements 30 in the subsequent process. The fluorescent material p can be formed by spin coating, deposition, dispensing, doctor blade or cast film filling. In another embodiment, the plurality of photovoltaic elements 3 can also be coated with different fluorescent materials. In another embodiment, the plurality of photovoltaic elements 3 can also be selectively coated differently. The phosphor material, rather than all of the photovoltaic elements 3〇, is coated to mix different colored lights. For example, in one embodiment, the plurality of photovoltaic elements 30 can be blue light emitting diodes and a plurality of photovoltaic elements The two photovoltaic elements 30 of the three turns are regarded as a group, wherein the fluorescent material C coated by the first photoelectric element may be red fluorescent powder, and the fluorescent material p coated by the second photoelectric element may be green The phosphor powder 'and the third photovoltaic element may not be coated with the luminescent material to be mixed to emit white light. Next, as shown in Fig. 24B, a viscous adhesive material 4 is provided to fill the aisle region 304 of the plurality of photovoltaic elements 30. And covering the above plural The photovoltaic element 30 and the surface of the first connecting layer 2 which are not covered by the photovoltaic element, wherein the adhesive adhesive 40 can be formed by spin coating, printing or mold potting, and the adhesive adhesive 40 can be elastic. The material may be selected from the group consisting of smc〇ne rubber, siiicone resin, shijiao rubber, elastic pu, porous buckle, 16 201104914 acrylic rubber or crystal cutting gel such as blue film. Or in the present embodiment, 'a polishing process can be performed, and the surface of the plurality of photovoltaic elements 30 can be flattened, and the surface of the above-mentioned photovoltaic element 3 does not have an excess of overflow or depression. Sex rubber 4 〇. Subsequently, as shown in Fig. 24C, a permanent substrate 5 is provided, and a plurality of photovoltaic elements 30 coated with the adhesive adhesive 40 are bonded, which can be joined by a hot pressing process. In a preferred embodiment, the permanent substrate 5 is in direct contact with the substrate 303 on which the optical component 30 is placed. The material of the permanent substrate 50 may be a highly transparent substrate such as glass or quartz. ...

Then, as shown in FIG. 24D, the temporary substrate 丨〇, the first connecting layer 20 and the partial adhesive layer 40 may be removed by laser stripping, heating and separating the film pattern, and the film pattern is dissolved. The electrodes 3 〇 1 of the photovoltaic element 3 and the partial epitaxial layer 3 〇 2 of the semiconductor. Then, as shown in Fig. 24E, a plurality of Fan-out electrodes 305 are connected to the electrodes 301 of the plurality of photovoltaic elements by electroplating or evaporation. Wherein the area of the dilated electrode 3〇5 is larger than the electrode 301 of the optoelectronic element to increase the parametric tolerance of the subsequent encapsulation. In addition, due to increased expansion

The area of 305 will be more effective in guiding the heat source to the substrate such as metal or PCB of the subsequent package. The material of the above-mentioned expanding electrode may be gold, aluminum, alloy or a multilayer metal structure. Finally, as shown in Figures 24F-24G, the plurality of photovoltaic elements are diced to form respective dies, and then bonded to the submount 60 by at least one solder 601. A system level photovoltaic structure is formed. The secondary carrier 60 may be a lead frame or a large-sized mounting substrate to facilitate circuit planning of the system-level photovoltaic structure and its heat dissipation effect. It should be noted that the process steps in the above two embodiments may also be referred to or combined with each other. For example, the photovoltaic element in the first embodiment may also selectively coat the fluorescent material, or may continue after the 23D image. The subsequent steps of making the electrode, cutting the wafer, etc. in Fig. 24E; similarly, the second embodiment can also be electrically connected to the plurality of photovoltaic elements by wires in the step of Fig. 24D and subsequent steps of Fig. 23E. In the other embodiment, in the other embodiment, the panel is attached to the panel 23B or 24B, and the permanent substrate 5G is provided, and the adhesive layer P is first read and applied to the field. U 2 pieces of 3G joints, this joining method can be - hot pressing, wherein ten": the material of the connecting layer 70 can be (10) shoulder, Shishijia map = ^ as the second = Ming in another embodiment 'continued in After the 23B or 24B diagram is shown in FIG. 25B, the second hybrid layer 7n of the first vehicle technology complex channel 701 may also be a heat dissipation including a heat dissipation, and may increase the 曰 = = = increase System level optoelectronic components

. ίί 7Λ/ί, brocade or alloy. In addition, the channel 701 can also be connected to the second 2; for the material of the question, such as sapphire, metal, nitride, oxidized as the first species; ^ after the addition or viewing, using - 4 ^ a plate 50 ' And firstly connecting the permanent substrate 50 - the second connection ^ 7 Π first - the first reflective layer 8G, and then bonding the electrical component 30 after the connection is made ^ and the plurality of light coated with the adhesive adhesive 40 = The combination method can be a hot pressing process. Among them, the interposer RO ^, X SlNx, SlHcone, and the like. The first reflected sound

The composition or the flipping of the metal, or by the dielectric or semi-conducting plus the reflection of the system - can be increased, if the plurality of photovoltaic elements 30 are placed too close, the micro = ^ MlCn > Py_id _y The substrate 50'. The above can be made by using the body of the body, the cone structure of the substrate, wherein the shape can be a cone, a double cone and a quadrangular cone. The bottom angle of the above-mentioned polar pyramid 5〇1 can be between 20 and 70. Between degrees. In the 18 201104914 micro-corner array substrate 5 〇, the surface can also be covered with high if Γ such as silver, Ming, and metal: In addition, the above micro-ceramic, alloy or printed electricity (=: e), glass, quartz, C Readable, the material can be copper, Ming, Tao, Shi Xi. The production and application of adhesive adhesive materials, such as, and the first electricity, the lateral light reflection becomes a positive fine profit to increase the light extraction efficiency i each figure and remuneration, although only divided into the work of the real _, the lack of each of the ten examples Explain, disclose, coordinate, or merge Putian® I with the elements, implementations, and designs that are described or revealed. It is to be understood that the scope of the invention is not intended to limit the scope of the invention, the actual order, or the use of the materials and the various modifications and variations of the invention, without departing from the spirit and scope of the invention.

19 201104914 [Simple description of the drawings] ^1 shows a light-emitting diode package structure; Figure 2 to Figure 2d shows a photovoltaic system manufacturing method according to an embodiment of the present invention; , ', ^ 3 A schematic diagram of an optoelectronic system according to an embodiment of the present invention; FIG. 4 is a diagram showing a system unit and a carrier according to an embodiment of the present invention, showing a system unit and a sub-carrier according to an embodiment of the present invention. Sound

Figure 6 is a schematic diagram showing the electrical connection of the system unit in the photovoltaic system according to an embodiment of the present invention; Figure 7 is a schematic view showing the electrical connection of the system unit in the photovoltaic system according to another embodiment of the present invention; A schematic diagram of electrical connections of system units in a photovoltaic system according to still another embodiment of the present invention; FIGS. 9 ′′ to 9D are diagrams showing a method of manufacturing a photovoltaic system according to another embodiment of the present invention; Schematic diagram of electrical connection of system units in an optoelectronic system according to an embodiment of the invention;

Figure 1 is a diagram showing a subgroup in a photovoltaic system according to an embodiment of the present invention. [12] shows an electrical connection architecture of a subgroup according to an embodiment of the present invention; An electrical connection architecture of a subgroup according to another embodiment of the present invention; FIG. 14 is a plan view showing a single system unit according to an embodiment of the present invention; and FIG. 15 is a view showing an optoelectronic system according to an embodiment of the present invention. The arrangement of the wavelength converting material; '16 is a configuration showing the wavelength conversion 20 201104914 material in the photovoltaic system according to another embodiment of the present invention; and FIG. 17 is a diagram showing the wavelength in the photovoltaic system according to still another embodiment of the present invention. The arrangement of the conversion material; Fig. 18 is a view showing the arrangement of the wavelength conversion material in the photovoltaic system according to an embodiment of the present invention; '19 shows the configuration of the wavelength conversion material in the photovoltaic system according to another embodiment of the present invention. MODE 20 shows a configuration of a wavelength conversion material in a photovoltaic system according to still another embodiment of the present invention; '21 is a display according to the present invention The arrangement of the system units in the photovoltaic system of the first embodiment is not intended; FIG. 22 is a schematic diagram showing the arrangement of the photovoltaic system or the sub-group according to an embodiment of the present invention; and FIGS. 23A to 23E are the manufacturing processes of the present invention. 24A to 24G are schematic views showing the structure of a manufacturing process of the present invention; FIGS. 25A and 25B are schematic views showing the structure of a manufacturing process according to an embodiment of the present invention; and FIG. 26 is a schematic structural view of a manufacturing process according to an embodiment of the present invention; 27 is a schematic structural view of a manufacturing process according to an embodiment of the present invention. 21 201104914 [Description of main components] 10 Carrier, temporary substrate 60 Electrical connection 10a External body 60a Conductor 10b External body 60b Internal connection 20 layers, structure, first connection layer 60b, isolation area 30 System unit, photoelectric element 60c circuit Carrier 301 electrode 601 solder 302 semiconductor crystal layer 70 second connection layer 303 substrate 70, second connection layer 304 walkway region 701 channel 305 expansion electrode 80 first reflective layer 40 material, adhesive material 100 photoelectric system 50 times carrier Sub-group 50 of permanent substrate 100a, sub-group 50b of substrate 100b sub-group 501 of micro-cone 200 illuminating diode package structure

VII. Application for patent scope 22

Claims (1)

201104914 [Description of main components] 10 Carrier, temporary substrate 60 Electrical connection 10a External body 60a Conductor 10b External body 60b Internal connection 20 layers, structure, first connection layer 60b, isolation area 30 System unit, photoelectric element 60c Circuit carrier 301 electrode 601 solder 302 semiconductor crystal layer 70 second connection layer 303 substrate 70, second connection layer 304 walkway region 701 channel 305 expansion electrode 80 first reflective layer 40 material, adhesive material 100 photoelectric system 50 times carrier, Permanent substrate 100a subgroup 50, substrate 100b subgroup 50a bonding layer 100c subgroup 501 micro angle cone 200 light emitting diode package structure VII. Patent application scope 22 201104914. A system-level photoelectric structure manufacturing method, the method comprising the steps of: providing a temporary substrate; providing a plurality of silk field components depending on the level society, and a walkway area; And covering the unsealed electrical component; providing a water-repellent substrate by bonding the plurality of photovoltaic components by the adhesive material; The temporary substrate is removed. 2. The method of fabricating a system-level photovoltaic structure according to item i of the above-mentioned Japanese Patent Application No. i, further comprising forming a tantalum-connecting layer formed on the temporary substrate and connecting the plurality of unpackaged photovoltaic elements. 3. The system-level photovoltaic structure manufacturing method of claim 2, wherein the plurality of unpackaged photovoltaic elements are light emitting diodes and may have the same or different emission wavelengths. 4. The method of manufacturing a system-level photovoltaic structure according to claim 3, wherein the light emitting diode comprises at least: a substrate; a semiconductor epitaxial layer formed on the substrate, comprising: a first conductive semiconductor a layer, an active layer, and a second conductive semiconductor layer; and an electrode formed on the first conductive semiconductor. 5. The system-level photovoltaic structure manufacturing method of claim 4, wherein the method of forming a plurality of wires electrically connects the plurality of electrodes of the unpackaged photovoltaic elements. 6.·If you apply for the patent scope! The system-level photovoltaic structure manufacturing method of the present invention, wherein the plurality of unsealed photovoltaic elements are connected to the temporary substrate, and each of the fluorescent materials can be coated. 7. The method of claim 3, wherein the forming-expanding electrode is formed on the electrodes of each of the plurality of unpackaged photovoltaic elements. 8. The method of fabricating a system-level photovoltaic structure according to claim 1, further comprising forming a second connection layer between the plurality of unpackaged photovoltaic elements and the permanent substrate. 9. The system-level photovoltaic structure manufacturing method of claim 8, wherein the first connection layer comprises a plurality of channels. 10. The system-level photovoltaic structure manufacturing method of claim 8, further comprising forming a first reflective layer between the permanent substrate and the second connecting layer. The system-level photovoltaic structure manufacturing method according to the first aspect of the invention, wherein the quaternary permanent substrate can be an array wire having a plurality of micro pyramids. 12. For the system-level photoelectric structure manufacturing method described in the scope of patent application 帛1, /, the materials of the X-temporary substrate and the 5-well permanent substrate may be sili (7)ne, glass, quartz, ceramic: yes , alloy or printed circuit board (PCB). 13_ A system-level photovoltaic structure manufacturing method according to item 1, wherein the plurality of photovoltaic elements are placed on the temporary substrate by a pick and place system. 14. The method of manufacturing a system-level photovoltaic structure according to claim 1, wherein the material of the adhesive material is silicone rubber, slllcone resin, elastic PU, porous PU, acrylic rubber. (acrylic rubber) or grain cutting glue, such as blue film or glue. 15. For example, in the middle of the material, the third-level optoelectronic structure manufacturing method, • The adhesive material can be formed by spin coating, printing or mold filling. 16. The method of manufacturing a secret photovoltaic structure according to the first aspect of the invention, wherein the adhesive material bonds the plurality of photovoltaic elements and the permanent substrate by a hot pressing process. 17. The method of fabricating a system-level photovoltaic structure according to claim 1, wherein the medium-alternating substrate can be removed by a laser stripping, heating separation film pattern or a dissolving film pattern process. 18. The system-level photovoltaic structure manufacturing method according to claim 2, wherein the first connecting layer is an adhesive tape, for example, a release tape, a heat resistant tape or a blue film. I9. The method for manufacturing a secret photovoltaic structure according to the fifth aspect of the patent, wherein the material of the wire may be gold, slag, alloy or multi-layer metal. 2〇. System level as described in claim 4 The photoelectric structure manufacturing method, wherein the electrode of the light emitting diode contacts the temporary wire and the substrate of the light emitting diode contacts the permanent substrate. 25 201104914 21. The application of the secret money structure described in Item 4 of the application The method, the material of the first conductive type semiconductor layer, the active layer, and the first conductive type semiconductor layer of the medium light-receiving body includes one or more substances selected from the group consisting of gallium, ruthenium (5), and indium (In) , Kun (As), p), gas (n), and 矽 (Si) groups. 22. The method for manufacturing a new-grade light structure according to the item of the towel, wherein the material of the second connecting layer may be Si〇x or SiNx. • A method of fabricating a system-level photovoltaic structure as described in claim 9 wherein the material of the channel is a metal such as copper, sulphur, nickel or an alloy. The method of manufacturing the system-level photoelectric structure described in the first paragraph of the patent application, the material of the fourth-first reflective layer can be a metal such as silver or slag. 25. If the patent application scope is 11th The system-level photovoltaic structure manufacturing method, wherein the array substrate material having a plurality of micro pyramids may be sihcone, glass, quartz, shout, alloy or printed circuit board (pcB). The method for manufacturing a system-level photovoltaic structure according to Item 11, wherein the micro-corner can be a polygonal pyramid structure such as a cone, a triangular cone, and a quadrangular pyramid. 27· The system-level photoelectric system as described in the scope of claim U The manufacturing method of the structure, wherein the angle of the bottom angle of the micro-horn can be between 20 and 70 degrees. 28· As for the manufacturing method of the new-level domain structure described in Item 11 of the article, 4 of which has the Wei Wei scale The surface of the vehicular plate can be covered - a second reflective layer. 29. The method of manufacturing a system-level photovoltaic structure according to claim 28, wherein the material of the first reflection layer of the δ hai may be a metal such as silver, inscription, or ship. 30. The method of fabricating a system-level photovoltaic structure according to claim 7, further comprising cutting the plurality of unpackaged photovoltaic elements to form respective crystal grains, and bonding the same to the primary carrier by the expansion electrode Above (submoimt). 31. The method of fabricating a system-level photovoltaic structure according to claim 3, wherein the 5th carrier can be a lead frame or a large-sized mounting substrate. 32. A system-level photovoltaic structure comprising: at least: a permanent substrate; and a plurality of unpackaged photovoltaic elements formed on the permanent substrate and forming at least a walkway region in the spaced regions thereof, and filling the adhesive material The walkway area. 33. If you want to reproduce the 32nd grade H-level photovoltaic structure, it also includes electrically connecting the plurality of unpackaged optoelectronic components with a plurality of wires. 34. The system level photovoltaic structure of claim 32, further comprising a connection layer formed between the permanent substrate and the plurality of unpackaged photovoltaic elements. 35. The system-level photovoltaic structure as described in the application of the patent, color division, wherein the connection layer may comprise a plurality of channels. ^ 36. The system-level photovoltaic structure described in the patent scope of claim 34, Further, a reflective layer is formed between the permanent substrate and the connection. 37. The system-level photovoltaic structure of claim 34, wherein the permanent & 38. The system-level photovoltaic structure of claim 37, wherein the micro 27 201104914 pyramid array substrate has a plurality of micro pyramids. 39. The system level photovoltaic structure of claim 32, wherein The plurality of unencapsulated money elements may be light-emitting minus, and may have the same or different wavelengths of light. 40. The system-level photovoltaic structure of claim 39, wherein the light-emitting diode comprises at least: a substrate; a semiconductor epitaxial layer formed on the substrate, comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and an electrode formed on 41. The system-level photovoltaic structure of claim 40, further comprising coating the plurality of light-emitting diodes with a fluorescent material. 42. The system-level photovoltaic structure, wherein the fluorescent material covering the plurality of light-emitting diodes may be the same or different materials. 43. The system-level photovoltaic structure according to claim 40, wherein The substrate of the light-emitting diode directly contacts the permanent substrate. 4. The system-level photovoltaic structure of claim 4, further comprising forming at least one expansion electrode on the electrodes of the plurality of light-emitting diodes. 45. The system-level photovoltaic structure of claim 32, wherein the material of the permanent substrate is silicin, glass, quartz, ceramic, plex 28 201104914 gold or printed circuit board (pCB). 46. The system-level photovoltaic structure of claim 32, wherein the material of the adhesive can be silica gelne mbber, silica crucible, elastic PU, Porous PU, An acrylic rubber (acryliCrubbe) or a granule-cutting gel, such as a blue film or a UV gel. 47. The system-level photovoltaic structure of claim 32, wherein the wire is made of gold, aluminum, alloy or multilayer. The system-level photovoltaic structure according to claim 4, wherein the material of the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer of the light-emitting body comprises One or more substances selected from the group consisting of gallium (Ga), aluminum (A1), indium (In), arsenic (As), phosphorus (P), nitrogen (N), and cerium (Si). 49. The system level photovoltaic structure of claim 34, wherein the material of the connection layer is Si〇x, SiNx. Lu 5〇. *Applicable to the system-level photovoltaic structure described in paragraph 35, wherein the material of the channel may be a metal such as copper, aluminum, nickel or an alloy. 51. The system-level photovoltaic structure of claim 1 wherein the material of the first reflective layer is a metal such as silver, aluminum or platinum. 52. The system-level photovoltaic structure of claim 37, wherein the material of the micro-horned array substrate is silicone, glass, quartz, ceramic, alloy or printed circuit board (PCB). 53. The system-level photovoltaic structure as described in claim 100, wherein the micro-29 201104914 pyramid can be a polygonal pyramid structure such as a cone, a triangular cone, and a quadrangular pyramid. For example, the system-level photovoltaic structure described in claim 38, wherein the corner angle of the pyramid can be between 2 〇 and %. 5. The system level photovoltaic structure of claim 37, wherein the surface of the micro pyramid array substrate is coated with a second reflective layer. The system-level photovoltaic structure of claim 55, wherein the material of the second reflective layer is a metal such as silver, aluminum or platinum. 30