CN101996892B - System level photoelectric structure and manufacturing method thereof - Google Patents

System level photoelectric structure and manufacturing method thereof Download PDF

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CN101996892B
CN101996892B CN2010100021851A CN201010002185A CN101996892B CN 101996892 B CN101996892 B CN 101996892B CN 2010100021851 A CN2010100021851 A CN 2010100021851A CN 201010002185 A CN201010002185 A CN 201010002185A CN 101996892 B CN101996892 B CN 101996892B
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system level
photovoltaic
substrate
material
plurality
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CN101996892A (en
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谢明勋
韩政男
洪盟渊
刘欣茂
李宗宪
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晶元光电股份有限公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Abstract

本发明提供系统级光电结构及其制作方法,其制作方法步骤至少包含:提供暂时基板;提供多个未封装光电元件,连接于基板之上,并形成多个走道区;提供粘性胶材,填满走道区并覆盖未封装光电元件;提供永久基板,通过粘性胶材接合多个未封装光电元件;以及移除暂时基板。 The present invention provides a system-level photoelectric structure and manufacturing method, its production method comprising at least the steps of: providing a temporary substrate; providing a plurality of non-encapsulated photovoltaic elements, connected on the substrate, and forming a plurality of regions walkway; providing a viscous adhesive material, filled walkway area and full coverage is not encapsulated photovoltaic element; providing permanent substrate, a plurality of photovoltaic elements unpackaged adhesive bonded by adhesive; and removing the temporary substrate.

Description

系统级光电结构及其制作方法 System level structure and method of manufacturing the photoelectric

技术领域 FIELD

[0001] 本发明涉及一种光电系统,尤涉及一种具有整合性的发光系统。 [0001] The present invention relates to an optoelectronic system, and more particularly relates to a lighting system having integrated.

背景技术 Background technique

[0002] 光电元件如发光二极管的封装结构主要产自于繁复的单芯片封装流程。 [0002] The optoelectronic device package of the light emitting diode is mainly produced in complicated processes a single chip package. 未封装的光电元件经封装后,再结合其他电子元件,如电容、电感等,及/或非电子元件,可以形成光电系统。 Unpackaged photovoltaic element after packaged, combined with other electronic components, such as capacitors, inductors, and / or electronic components, photovoltaic systems can be formed.

[0003] 然而,在电子消费产品小型化与轻薄化的发展趋势下,光电元件的开发也朝向更小的封装尺寸。 [0003] However, in the consumer electronics miniaturization and lightweight of the development trend toward the development of photovoltaic element is also smaller package size. 其中,芯片级封装(Chip-Level Package ;CLP)为半导体以及光电元件封装设计的期待方式之一。 Wherein the chip scale package (Chip-Level Package; CLP) as well as one of looking semiconductor optoelectronic device package design.

发明内容 SUMMARY

[0004] 依据本发明实施例,提供系统级光电结构及其制作方法,其制作方法步骤至少包含:提供暂时基板;提供多个未封装光电元件,连接于基板之上,并形成多个走道区;提供粘性胶材,填满走道区并覆盖光电元件;提供永久基板,通过粘性胶材键合多个光电元件;以及移除暂时基板。 [0004] The embodiment according to the present invention, there is provided a photoelectric system level structure and manufacturing method, its production method comprising at least the steps of: providing a temporary substrate; providing a plurality of non-encapsulated photovoltaic elements, connected on the substrate, and forming a plurality of regions walkway ; providing a viscous adhesive material to fill and cover the walkway area photovoltaic element; providing permanent substrate, by adhesive bonding adhesive plurality of photoelectric elements; and removing the temporary substrate.

附图说明 BRIEF DESCRIPTION

[0005] 图1显示发光二极管封装结构; [0005] Figure 1 shows a light emitting diode package;

[0006] 图2A至图2D显示依据本发明实施例的光电系统的制造方法; [0006] Figures 2A to 2D show a method of manufacturing a photovoltaic system according to an embodiment of the present invention;

[0007] 图3显示依据本发明实施例的光电系统的示意图; [0007] FIG. 3 shows a schematic view of a photovoltaic system according to an embodiment of the present invention;

[0008] 图4显示依据本发明实施例的系统单元与载具的示意图; [0008] FIG. 4 shows a schematic view of the system unit and the carrier of the embodiment of the present invention according to embodiments;

[0009] 图5显示依据本发明实施例的系统单元与次载具的示意图; [0009] FIG. 5 shows a schematic view of the system unit according to an embodiment of the present invention and the submount;

[0010] 图6(a)至图6(c)显示依据本发明实施例的光电系统中系统单元的电连接示意图; [0010] FIG. 6 (a) to 6 (c) show a schematic view of an electrical connector system according to the photovoltaic cell system according to embodiments of the present invention;

[0011] 图7(a)至图7(c)显示依据本发明另一实施例的光电系统中系统单元的电连接示意图; [0011] FIG. 7 (a) to 7 (c) show photoelectric system according to another embodiment of the present invention in a schematic view of the system unit are connected;

[0012] 图8(a)至图8(c)显示依据本发明又一实施例的光电系统中系统单元的电连接示意图; [0012] FIG. 8 (a) to 8 (c) show photoelectric system according to still another embodiment of the present invention in a schematic view of the system unit are connected;

[0013] 图9A至图9D显示依据本发明另一实施例的光电系统的制造方法; [0013] FIGS. 9A to 9D show a method for manufacturing a photovoltaic system according to another embodiment of the present invention is based;

[0014] 图10(a)至图10(c)显示依据本发明实施例的光电系统中系统单元的电连接示意图; [0014] FIG. 10 (a) to 10 (c) show a schematic view of an electrical connector system according to the photovoltaic cell system according to embodiments of the present invention;

[0015] 图11显示依据本发明实施例的光电系统中子群组的示意图; [0015] FIG. 11 shows a schematic diagram of a photoelectric system according to an embodiment of the neutron groups according to the present invention;

[0016] 图12(a)至图12(d)显示依据本发明实施例的子群组的电性连接架构; [0016] FIG. 12 (a) to 12 (d) show the electrical connection architecture according to embodiments of the subgroup embodiment of the present invention;

[0017] 图13显示依据本发明另一实施例的子群组的电性连接架构; [0017] Figure 13 shows the electrical sub-groups according to another embodiment of the present invention, connection architecture;

[0018] 图14(a)至图14(b)显示依据本发明实施例的单一系统单元的尺寸图;[0019] 图15(a)至图15(d)显示依据本发明实施例的光电系统中波长转换材料的配置方式; [0018] FIG. 14 (a) to 14 (b) display size in FIG single system unit in the embodiment according to the present invention; [0019] FIG. 15 (a) through 15 (d) show the photoelectric accordance with embodiments of the present invention system configuration wavelength converting material;

[0020] 图16(a)至图16(d)显示依据本发明另一实施例的光电系统中波长转换材料的配 [0020] FIG. 16 (a) to 16 (d) show optoelectronic system according to another embodiment of the present invention with wavelength conversion material

置方式; Juxtaposition;

[0021] 图17(a)至图17(b)显示依据本发明又一实施例的光电系统中波长转换材料的配 [0021] FIG. 17 (a) to 17 (b) show the embodiment with a photovoltaic system according to still another embodiment of the present invention, the wavelength converting material

置方式; Juxtaposition;

[0022] 图18(a)至图18(c)显示依据本发明实施例的光电系统中波长转换材料的配置方式; [0022] FIG. 18 (a) to 18 (c) show the system configuration of the photoelectric embodiment of the wavelength conversion material according to the present invention;

[0023] 图19(a)至图19(d)显示依据本发明另一实施例的光电系统中波长转换材料的配置方式; [0023] FIG. 19 (a) to 19 (d) show the system configuration of the photoelectric embodiment of the wavelength conversion material according to another embodiment of the present invention;

[0024] 图20(a)至图20(d)显示依据本发明又一实施例的光电系统中波长转换材料的配 [0024] FIG. 20 (a) to 20 (d) show still another embodiment according to embodiment of the optoelectronic system of the present invention with wavelength conversion material

置方式; Juxtaposition;

[0025] 图21(a)至图21(b)显示依据本发明实施例的光电系统中系统单元的配置示意图; [0025] FIG. 21 (a) to 21 (b) show a schematic configuration of the photovoltaic system of the embodiment according to the present invention, the system unit;

[0026] 图22(a)至图22(f)显示依据本发明实施例的光电系统或子群组的配置示意图; [0026] FIG. 22 (a) to 22 (f) show a schematic configuration based photovoltaic systems or sub-group of embodiments of the present invention;

[0027] 图23A至图23E为本发明制造流程结构示意图; [0027] FIGS. 23A to 23E of the present invention, a schematic manufacturing process structure;

[0028] 图24A至图24G为本发明制造流程结构示意图; [0028] The schematic process for producing the structure of FIG. 24A to 24G of the present invention;

[0029] 图25A与图25B为本发明实施例的制造流程结构示意图; [0029] FIG 25A and FIG 25B a schematic view of the manufacturing process of the present invention the structure of the embodiment;

[0030] 图26为本发明实施例的制造流程结构示意图;及 [0030] FIG 26 a schematic view of a configuration example of the process for manufacturing the present embodiment of the invention; and

[0031] 图27为本发明实施例的制造流程结构示意图。 [0031] FIG 27 a schematic structure of an embodiment of manufacturing process of the present invention.

[0032] 附图标记说明 [0032] REFERENCE NUMERALS

[0033] 10:载具、暂时基板 60:电性连接 [0033] 10: the carrier, the temporary substrate 60: electrically connected

[0034] IOa:外部体 60a:导线 [0034] IOa: outer body 60a: wire

[0035] IOb:外部体 60b:内部连接 [0035] IOb: outer body 60b: internal connection

[0036] 20 :层、结构、第一连接层 60b' :隔离区 [0036] 20: layer structure, a first connection layer 60b ': quarantine

[0037] 30:系统单元、光电元件 60c:电路载体 [0037] 30: system unit, photovoltaic elements 60c: the circuit carrier

[0038] 301:电极 601 :焊料 [0038] 301: electrode 601: Solder

[0039] 302 :半导体外延层 70 :第二连接层 [0039] 302: epitaxial semiconductor layer 70: second connection layer

[0040] 303 :基板 70' :第二连接层 [0040] 303: substrate 70 ': a second connection layer

[0041] 304:走道区 701 :通道 [0041] 304: walkway area 701: channel

[0042] 305:扩张电极 80 :第一反射层 [0042] 305: electrode 80 Expansion: a first reflective layer

[0043] 40 :材料、粘性胶材 100 :光电系统 [0043] 40: the material, the adhesive sealant 100: Optical system

[0044] 50 :次载具、永久基板 IOOa :子群组 [0044] 50: submount, the permanent substrate IOOa: subgroup

[0045] 50' :基板 IOOb :子群组 [0045] 50 ': substrate IOOb: subgroup

[0046] 50a :接合层 IOOc :子群组 [0046] 50a: bonding layer IOOc: subgroup

[0047] 501 :微角锥 200 :发光二极管封装结构 [0047] 501: micro-pyramid 200: LED package structure

具体实施方式[0048] 如图2A〜图2D所例示,依据本发明的实施例的光电系统100的制造方法简述如下:二或多个系统单元30初步配置于载具10上;利用材料40维持各个系统单元30间的空间关系;使系统单元30与载具10相分离;以及依需求建立系统单元30间的电性连接60。 DETAILED DESCRIPTION [0048] FIG 2A~ illustrated in FIG. 2D, an embodiment of the optoelectronic system according to the present invention, the manufacturing method 100 summarized as follows: two or more initial system unit 30 is disposed on the carrier 10; 40 with a material maintaining the spatial relationship of each system unit 30; a unit 30 of the system 10 with the carrier phase; and establish electrical system unit 30 between the connector 60 on demand. 惟上述各步骤的执行顺序或选择并不限于此,使用者当可依实际制造环境或条件安排。 However or selecting the order of execution of steps is not limited to this, as per the user when the manufacturing environment or conditions arrangement.

[0049] 详言之,依据本发明的实施例的光电系统100包括两或多个系统单元30以形成光能与电能的传输、转换网络(network)。 [0049] In detail, according to the system 100 comprises two or more units of the photovoltaic system of the embodiment 30 of the present invention to form a light transmission of electrical energy, a switching network (network). 系统单元30位于网络中,并提供光或电机能至少其一。 The system unit 30 is located in the network, and providing at least one light or motor can. 举例而言,光电系统100可接收信号、电能以输出光,或接收光以输出电能、信号。 For example, optical system 100 may receive signals, the output light power to, or receiving light to output a power signal. 在应用上,光电系统100可以用于照明、影像显示、影像辨识、影像重制、电力输出、数据储存、机械加工等。 In application, the system 100 may be used to illuminate the photo, image display, image recognition, image reproduction, power output, data storage, machining and the like.

[0050] 具体而言,光电系统100为发光二极管(LED)、光电二极管(photodiode)、光敏电阻(photoresister)、激光(laser)、红外线发射体(infrared emitter)、及太阳能电池(solar cell)等具光电机能的系统单元30中至少其一的集成(integration)、组合、堆叠。 [0050] Specifically, the photovoltaic system 100 is a light emitting diode (the LED), a photodiode (Photodiode), a photoresistor (photoresister), laser (Laser), infrared emitter (infrared emitter), and a solar cell (solar cell), etc. Optical system unit 30 function in at least one integration (integration), a combination of stacked. 此外,光电系统100尚可选择性地容纳电阻、电容、电感、二极管、集成电路等非光电机能的系统单元30。 Furthermore, photovoltaic system 100 can still selectively receiving non-optical performance of resistors, capacitors, inductors, diodes, integrated circuits and other system unit 30.

[0051] 载具10为系统单元30提供成长、承载基础。 [0051] The carrier 10 provides the growth of the system unit 30, the basis for the carrier. 候选材料其一包含但不限于锗(Ge)、砷化镓(GaAs)、铟化磷(InP)、蓝宝石(Sapphire)、碳化硅(SiC)、硅(Si)、铝酸锂(LiAlO2)、氧化锌(ZnO)、氮化镓(GaN)、氮化铝(AlN)、金属、玻璃、复合材料(Composite)、钻石、CVD钻石、与类钻碳(Diamond-Like Carbon ;DLC)等。 One candidate materials include, but are not limited to germanium (Ge), gallium arsenide (GaAs), indium phosphorus (InP), sapphire (Sapphire), silicon carbide (SiC), silicon (Si), lithium aluminate (LiAlO2), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN), metal, glass, composite (composite), diamond, the CVD diamond, and DLC (diamond-like carbon; DLC) and the like.

[0052] 在本发明的实施例中,一或两个以上的系统单元30的完整或主要结构完成于载具10之上。 [0052] In an embodiment of the present invention, two or more of a system unit or the complete primary structure 30 in the completed carrier 10 above. 具体而言,载具10作为此系统单元30的构建基础。 Specifically, the carrier 10 as the basis for constructing the system unit 30. 例如,一或两个以上的系统单元30通过化学沉积、物理沉积、电镀、合成、自组装(self-assembly)等法形成于载具10之上。 For example, more than one or two units of system 30 by chemical deposition, physical deposition, electroplating, synthetic, self-assembly (self-assembly) method and the like is formed on top of the carrier 10. 此外,除上述制造方法外,切割、研磨、抛光、光刻、蚀刻、热处理等亦可选择性地应用于完成系统单兀30之中。 Further, in addition to the above manufacturing method, cutting, grinding, polishing, photolithography, etching, heat treatment can be selectively applied to complete the system in a single Wu 30.

[0053] 依据本发明的实施例的系统单元30为光电半导体,其形成方式为通过外延成长多层半导体层于作为载具10的成长基板之上。 [0053] The unit of the embodiment of the system according to the present invention for the optical semiconductor 30, which is formed by way of epitaxial growth on the semiconductor layers grown on the substrate 10 as a carrier. 若两个以上的系统单元30形成于共同基板之上,相邻系统单元30间可通过形成沟槽或绝缘区以达电性、物理分离。 If more than two system unit 30 is formed on a common substrate, adjacent to the system unit 30 may be formed between the trench or electrically insulating region to achieve physical separation. 惟系统单元30间的电性布局(electrical layout)尚可利用内部连接、外部连接、或其二者达成。 However electrically layout system unit (electrical layout) between the internal connector 30 still available, an external connection, or both reached. 相关文献可参见本案申请人的台湾专利第434917号及第1249148号,其并被援引为本案的一部分。 Related documents present applicant can be found in Taiwan Patent Nos. 434,917 and second No. 1,249,148, which is part of the case and are cited.

[0054] 具体而言,系统单元30最少包含第一电性层、转换部、以及第二电性层。 [0054] Specifically, the system unit 30 comprises a least a first electrically conductive layer, the conversion unit, and a second electrically conductive layer. 第一电性层及第二电性层是彼此中至少两个部分的电性、极性或掺杂物相异、或者是分别用以提供电子与空穴的半导体材料单层或多层(“多层”是指两层或两层以上,以下同。),其电性选择可以为P型、η型、及i型中至少任意两者的组合。 The first layer and the second electrically conductive layer is electrically from each other in at least two portions of the electronic, polar, or different dopants, or a semiconductor material are used to provide single or multiple layers of electrons and holes ( "multi-layer" refers to two or more layers, the same applies below), which may be selected electrically P, combinations of any two η-type, i-type and at least. 转换部位于第一电性层及第二电性层之间,为电能与光能可能发生转换或被诱发转换的区域。 Conversion portion disposed between the first layer and the second electrically conductive layer electrically, electricity and solar energy conversion may occur or be induced transition region. 电能转变或诱发光能者例如是发光二极管、液晶显示器、有机发光二极管;光能转变或诱发电能者例如是太阳能电池、光电二极管。 Electrical energy into light energy or induced by, for example, a light emitting diode, a liquid crystal display, an organic light emitting diode; transition energy or energy induced by, for example, solar cells, photodiodes.

[0055] 依据本发明的另一实施例的系统单元30为发光二极管,其发光频谱可以通过改变半导体单层或多层的物理或化学要素进行调整。 [0055] According to another embodiment of the present invention, the system unit 30 of the embodiment is a light emitting diode, the emission spectrum can be adjusted by changing the physical or chemical components of the semiconductor single or multiple layers. 常用的材料例如是磷化铝镓铟(AlGaInP)系列、氮化铝镓铟(AlGaInN)系列、氧化锌(ZnO)系列等。 Commonly used materials, for example, aluminum gallium indium phosphide (an AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, zinc oxide (ZnO) series. 转换部的结构例如是:单异质结构(single heterostructure ;SH)、双异质结构(double heterostructure ;DH)、双侧双异质结构(double-side doubleheterostructure ;DDH)、或多层量子讲(mult1-quantum well ;MQW)。 For example, a conversion portion structure: single hetero structure (single heterostructure; SH), a double hetero structure (double heterostructure; DH), double-sided double hetero structure (double-side doubleheterostructure; DDH), or multi-quantum-talk ( mult1-quantum well; MQW). 再者,调整量子讲的对数亦可以改变发光波长。 Further, adjustment of the quantum number of stresses also may modify the emission wavelength.

[0056] 在本发明实施例中,一或两个以上的系统单元30完成于固定于载具10上之前,亦即,载具10及系统单元30在建立关联前本是彼此独立分离。 [0056] In an embodiment of the present invention, two or more of a system unit 30 before completion of the 10 fixed to the carrier, i.e., the carrier 10 and the system unit 30 are independent from each other prior to association. 具体而言,载具10作为此系统单元30的支撑。 Specifically, the carrier 10 as the support 30 of the system unit. 例如,一或两个以上的系统单元30通过胶、金属、压力、热等连接手段固定于载具10之上。 For example, more than one or two units of system 30 by glue, metal, pressure, heat and the like attachment means secured to the carrier 10 above. 相关文献可参见本案申请人的台湾专利第311287号、第456058号、第474034号、及第493286号,其并被援引为本案的一部分。 Related documents present applicant can be found in Taiwan Patent No. 311,287, No. 456,058, No. 474,034, No. 493,286 and the second, which is a part of the case and are cited. 此外,在建立关连的过程中,可采机械或人工方式将系统单元30放置于载具10之上。 Furthermore, during the establishment of the connection, it can be taken manually or mechanically to the system unit 30 is placed on the carrier 10.

[0057] 如图3所示,完成或半完成的光电系统100可以选择性地进一步与外部体相接。 [0057] As shown in FIG. 3, the semi-finished or completed photovoltaic system 100 may optionally further contact with the outer body. 此外部体可以连接至光电系统100的任一单侧或两侧。 In addition to any portion thereof may be connected to a photovoltaic system 100 of one or both sides. 在数个实施例中,光电系统100以具有电性连接60的外侧与外部体IOa相接;光电系统100以相对于电性连接60的外侧与外部体IOb相接;或者光电系统100以具有电性连接60的外侧及其相对侧二者与外部体10a、IOb相接。 In several embodiments, the photovoltaic system 100 having electrically connected to the outer body 60 and the outer contact IOa; photovoltaic system 100 is electrically connected to the outside with respect to the outer body 60 IOb of contact; or a photovoltaic system 100 having a 60 is electrically connected to both the outer and the opposite side of the outer body 10a, IOb contact. 惟光电系统100与外部体的相接并不限于以上态样,光电系统100的任一外表面皆可以与适当的外部体相整合。 Optical system 100 but in contact with the outer body is not limited to the above aspect, the outer surface of any of a photovoltaic system 100 may be integrated with all appropriate external body. 具体而言,外部体为单元、构件、装置、系统、结构、组成、或上述选择的任意组合。 Specifically, the outer body as a unit, component, device, system, structure, composition, or any combination thereof chosen. 例如,外部体为基板,其材料可选择如前述载具10者、电路集成、光电系统、有源元件、无源元件、电路元件集成、或治具等。 For example, the outer body is a substrate, which materials may be selected by the preceding carrier 10, an integrated circuit, optoelectronic systems, active elements, passive elements, integrated circuit elements, or as a rule.

[0058] 在本发明的实施例中,系统单元30与载具10间尚形成有一层或结构20,如图4所示。 [0058] In an embodiment of the present invention, the system unit 30 and the carrier 10 with one or more still structure 20 is formed as shown in FIG. 此层或结构20预期可达短期或长期连接部分或全部系统单元30与载具10之用。 This structure layer 20 is expected to reach or short or long connect some or all of the system unit 30 and the carrier 10. 在此,“短期”是指时间早于或恰于光电系统100的制造、送达、或解封完成的时点;“长期”是指时间晚于光电系统100的制造、送达、或解封完成的时点,换言之,系统单元30与载具10间并不以相分离为必要。 The "short-term" refers to the time before or just in manufacturing photovoltaic system 100, service, or re-opened completion point in time; "long-term" means a time later than the manufacture of photovoltaic system 100, service, or solution complete closure point, in other words, the system unit 30 and the carrier 10 is not necessary for phase separation. 具体而言,此层或结构20例如是胶体、胶带、金属单层、金属复层、合金、半导体、夹具、或上述选择的任意组合。 Specifically, in this structure, or layer 20, for example, colloidal, tape, metal single layer or multi-layer metal, alloy, semiconductor, clamps, or any combination thereof chosen. 此外,层或结构20除具有连接功能外,更可选择性地纳入反射、抗反射、电流阻障、扩散阻障、应力纾缓、导热、隔热等功能。 Further, in addition to having a layer structure 20 or connection function, but also can be selectively incorporated into reflective, antireflective, current barrier, diffusion barrier, relieve stress, thermal conductivity, thermal insulation and so on. 例如,层或结构20中包含反射面、位于系统单元30与反射面间的上中介层、及位于反射面与载具10间的下中介层。 For example, layer or structure 20 includes a reflective surface, located on the system unit between the interposer 30 and the reflective surface and the reflective surface of the carrier 10 of the lower interposer. 上中介层及下中介层可同时或分别具有除反射功能外的上述其他功能,具体如连接、扩散阻障等功能。 Upper and lower interposer interposer simultaneously or separately with other functions in addition to the above-described reflection function, such as specific connection, diffusion barrier functions.

[0059] 在本发明另一实施例中,系统单元30及材料40更可以与次载具50相接合,如图5所示。 Embodiment, the system unit 30 and the material 40 more submount 50 may be engaged, as shown in FIG [0059] In another embodiment of the present invention. 此接合可实施于图2A-图2D中任一步骤之前或之后。 This embodiment may be bonded to any one before step after FIG. 2A- 2D or FIG. 优选地,此接合实施于材料40导入制造流程之后,如图2B、图2C、或图2D的步骤之后。 Preferably, in this embodiment, after engaging the material 40 introduced into the manufacturing process, after the step of FIG. 2D in Figure 2B, 2C, the or. 若次载体50于图2B的步骤后即与系统单元30及材料40接合,则可以为后续工艺提供一个较为可靠的中间结构。 When the time after the step 50 in FIG. 2B carrier engaged with the system unit 30 and the material 40, that can provide a more reliable subsequent processing of the intermediate structure. 次载具50与系统单元30的接合方式可参照前述图4的说明,亦可为加压手段、加热手段、或其组合。 Submount 50 and the engagement unit 30 of the system may be described with reference to the FIG. 4, may also be pressurized means, heating means, or a combination thereof. 具体而言,接合层50a形成于次载体50与系统单元30之间以达成接合其二者的目的。 Specifically, the bonding layer 50a is formed between the sub-carrier 50 with the system unit 30 to achieve its purpose of joining the two.

[0060] 此外,接合层50a除具有连接功能外,更可选择性地纳入反射、抗反射、电流阻障、扩散阻障、应力纾缓、导热、隔热等功能,然而,这些功能的达成并不以通过附加元件为必要,亦可以利用调整次载具50本身的成分、几何形状、加工方式等手段以达成。 [0060] Further, in addition to the bonding layer 50a having external connection function, and more selectively into the reflective, antireflective, current barrier, diffusion barrier, relieve stress, thermal conductivity, insulation and other functions, however, to achieve these functions through additional elements not necessary, it can also be adjusted using the components of the submount 50 itself, geometry, and other means to achieve processing methods. 例如,在次载具50的至少一个出光面上形成反射、折射、散射、聚光、准直、遮蔽结构。 For example, the submount 50 is formed at least one surface of the light reflected, refracted, scattered, a condenser, a collimator, shielding structure. 此出光面例如是与系统单元30相接的面、与材料40相接的面、与环境介质相接的面。 This surface, for example, the system unit 30 in contact with a surface, the surface in contact with the material 40, the surface in contact with the ambient medium. 具体而言,反射、折射、散射、聚光、遮蔽结构例如是镜面、规则凹凸面、不规则凹凸面、高折射率差异介面、光子晶体、凹透镜、凸透镜、菲涅耳透镜(Fresnel lens)、不透光面中至少其一。 Specifically, reflection, refraction, scattering, a condenser, for example, a mirror shield structure, rules uneven surface, an irregular uneven surface, a high index contrast interface, a photonic crystal, a concave lens, a convex lens, a Fresnel lens (Fresnel lens), opaque surface in at least one.

[0061] 图6例示依据本发明实施例的光电系统100中至少两系统单元30的电连接态样。 [0061] FIG. 6 illustrates a photoelectric system according to an embodiment of the present invention is at least 100 in the system unit 30 is connected to two aspects. 在此,系统单元30具有两个面向同方向的电极301,此结构的具体系统单元30例如是发光二极管,更具体言之,为形成于绝缘体,例如蓝宝石,上的发光二极管。 Here, the system unit 30 has two electrodes 301 face the same direction, the system unit 30 of this particular structure, such as a light emitting diode, and more particularly words, to form an insulator, such as sapphire, the light emitting diode. 图(a)中,两系统单元30间通过导线60a连接正负极形成电性串联;图(b)中,两系统单元30间通过导线60a连接正极形成电性连接;图(c)中,两系统单元30间通过导线60a连接负极形成电性连接。 FIG. (A), the system unit 30 via two connecting leads 60a electrically connected in series forming positive and negative; view (b), the two system unit 30 is connected via a positive electrode lead 60a is electrically connected is formed; FIG. (C), the two system unit 30 is connected via a wire 60a is electrically connected to the negative electrode is formed.

[0062] 图7例示依据本发明另一实施例的光电系统100中至少两系统单元30的电连接态样。 [0062] Figure 7 illustrates the present invention according to another embodiment of the photoelectric system 100 in the system unit 30 at least two aspects of the embodiment is connected. 具体的实施方式可参考图6的说明。 Specific embodiments may be described with reference to FIG. 6. 惟于本实施例中,系统单元30间的电连接通过于系统单元30上形成内部连接60b达成。 But in the present embodiment, the electrical system unit 30 is connected by an internal connector 60b is formed on the system to reach 30 units. 内部连接60b的一种形成方式是于系统单元30的设定区域上形成隔离区60b'后沉积金属材料。 A method of forming internal connection way 60b is formed in the isolation region 60b 'after depositing a metal material on a region setting unit 30 of the system.

[0063] 图8例示依据本发明又一实施例的光电系统100中至少两系统单元30的电连接态样。 [0063] FIG. 8 illustrates the present invention according to still another embodiment of the photoelectric system 100 in the system unit 30 at least two aspects of the embodiment is connected. 图(a)及图(b)中,系统单元30的电极301调整或接续至大致相同的位置,如接近于或恰于材料40表面的位置。 FIG. (A) and (b) of the electrode unit 30 of the system 301 or adjusted to substantially the same position as the connection, such as a position close to or just to a surface of the material 40. 图8(a)中,两系统单元30间通过电性连接60,例如:导线60a或内部连接60b,连接正负极形成电性串联;图(b)中,两系统单元30间通过电性连接60,例如:导线60a或内部连接60b,连接电极301形成图左中三种等效电路图所示的电性连接之一。 FIG 8 (a), the two inter-system unit 30 is connected electrically via 60, for example: internal connecting wires 60a or 60b, the positive and negative electrical connection in series; view (b), the system unit 30 between the two electrically 60 is connected, for example: internal connecting wires 60a or 60b, the connection electrode 301 is electrically connected to form one of three equivalent circuit diagram of FIG left as shown. 图(c)中,两系统单元30连接至电路载体60c而成为电网络的一部分。 FIG. (C), the system unit 30 is connected to the two circuit carrier 60c becomes part of the electrical network.

[0064] 如图9A〜图9D所例示,依据本发明的另一实施例的光电系统100的制造方法简述如下:两或多个系统单元30初步配置于载具10上并形成电性连接60于一侧;利用材料40维持各个系统单元30间的空间关系;使系统单元30与载具10相分离;以及在系统单元30的另一侧形成电性连接60。 [0064] As shown in FIG. 9D 9A~ illustrated, according to another embodiment of the present invention, optoelectronic system 100 of the embodiment of the manufacturing method are summarized as follows: two or more initial system unit 30 is disposed on the carrier 10 and the electrical connection is formed 60 on a side; 40 to maintain the spatial relationship between various system units with a material 30; 30 of the system unit 10 and the carrier phase; and formed on the other side of the electrical system unit 30 is connected 60. 惟上述各步骤的执行顺序或选择并不限于此,使用者当可依实际制造环境或条件安排。 However or selecting the order of execution of steps is not limited to this, as per the user when the manufacturing environment or conditions arrangement. 此外,图9D中两系统单元30两侧的电性连接60数量或位置仅为例示而非用以限制本发明的实施方式,使用者当可依照电路的特性安排、调整。 In addition, 30 electrically FIG. 9D two sides of the system unit 60 connected to the number or position merely illustrative and not intended to limit the embodiments of the present invention, when a user in accordance with the characteristics of the circuit arrangement can be adjusted. 此外,在不显相冲突之下,前述诸实施例的说明可为本实施例所参考或使用。 In addition, no significant under conflict, the foregoing description of various embodiments with reference to the embodiment or the present embodiment may be used.

[0065] 图10例示依据本发明实施例的光电系统100中至少两系统单元30的电连接态样。 [0065] FIG. 10 illustrates a system embodiment according to photoelectric embodiment of the present invention is at least 100 in the system unit 30 is connected to two aspects. 图(a)中,两系统单元30同向配置,并通过电性连接60分别连接正极和负极形成并联,惟反向配置的系统单元30亦可通过电性连接60的适当布局形成并联;图(b)中,两系统单元30反向配置,并通过电性连接60连接正负极形成反向并联,惟同向配置的系统单元30亦可通过电性连接60的适当布局形成反向并联。 FIG. (A), the two are connected to the system unit 30 the same configuration, and are electrically connected through the 60 positive and negative electrodes are formed in parallel, but oppositely disposed in parallel to the system unit 30 may also be formed by connecting an appropriate electrical layout 60; FIG. (b), the two reversed configuration system unit 30, and connected by electrically connecting positive and negative electrodes 60 are formed in reverse parallel, but may also be formed with suitable layout 60 is connected in antiparallel to the system unit 30 configured by electrically . 图(c)中,两系统单元30连接至电路载体60c而成为电网络的一部分。 FIG. (C), the system unit 30 is connected to the two circuit carrier 60c becomes part of the electrical network.

[0066] 在本发明实施例中,被限制于材料40中的系统单元30群组可进一步被划分为数量相等或不等的子群组,如图11所示,惟图中系统单元30的个数与连接方式仅为例示,非用以限制本发明的实施方式,本申请案中其他实施例中揭示的系统单元型态在不显相冲突下皆可为本实施例采纳。 [0066] In the system unit 30 groups embodiment of the present invention, is limited in material 40 may be further divided into sub-groups of equal or unequal number, 11, but the system unit 30 in FIG. the number and connection way of example only, not to limit the embodiments of the invention, the system unit disclosed embodiment without significant patterns in conflict with the present embodiment Jieke adopted in other embodiments of the present application. 此外,子群组中各个系统单元30间的电连接方式可参照本发明其他相关的实施例。 In addition, each subgroup electrical connection system unit 30 with reference to the present invention may be related to other embodiments. 划分子群组的手段可选择化学式、物理式、或其组合应用。 Means for dividing the sub-groups of the formula Alternatively, the physical type, or a combination. 化学式手段例如是蚀刻等。 Chemical etching, for example, the formula means. 物理式手段例如是机械切割、研磨、激光切割、水切、热劈裂、超音波震动等。 Formula physical means such as mechanical cutting, grinding, laser cutting, water cutting, splitting the heat, ultrasonic vibration and the like. 相邻系统单元30间材料40的宽度优选地大于划分手段的加工公差。 The system unit 30 adjacent the material width is preferably greater than the splitting means 40 manufacturing tolerances.

[0067] 依据本发明实施例的子群组的电性连接架构如图12所示,惟附图中系统单元的型态仅为例示,非用以限制本发明的实施方式,本申请案中其他实施例中揭示的系统单元型态在不相冲突下皆可为本实施例采纳。 [0067] The electrical properties subgroup embodiment of the present invention is connected to the architecture shown in Figure 12, but the figures of the system unit patterns merely illustrative, not to limit the embodiments of the present invention, this application other embodiments disclosed in the system unit without conflicting patterns for the present embodiment to adopt Jieke embodiment. 图(a)中,电性连接60b跨过隔离区60b'架设于系统单元30的电极301及材料40之上。 FIG. (A), electrically connected across the isolation region 60b 60b 'bridged over the electrode material 301 and the system unit 30, 40. 图(b)中,电性连接60b的一端电性连接至系统单元30的电极301,另一端直接架设于材料40之上。 FIG. (B), electrically connected to one end 60b is electrically connected to the electrode 301 of the system unit 30, mounted directly on top of the other end of the material 40. 图(c)中,电性连接60b未经电极301即与系统单元30电性连接,并直接架设于材料40之上。 FIG (c) is electrically connected to the electrode 60b without i.e. 301 is electrically connected to the system unit 30, and mounted directly on top of the material 40. 图(d)中,电性连接60b未经电极301即与系统单元30电性连接,并跨过隔离区60b'后架设于材料40之上。 Figure (d), electrically connected to the electrode 60b without i.e. 301 is electrically connected to the system unit 30, and across the isolation region 60b '40 bridged over the material.

[0068] 如图13所示,在本发明实施例中,光电系统100包括两或多个以多维度方式组装的子群组。 As shown in [0068] 13, in the embodiment of the present invention, the photovoltaic system 100 comprises a sub-group of two or more assembled in a multi-dimensional manner. 各个子群组中系统单元的数量及连接方式分别可以相同或相异。 And the number of connections in the respective sub-groups each system unit may be the same or different. 例如,子群组IOOa及IOOc与子群组IOOb上下堆叠,其中,子群组IOOa中包括四个系统单元30 ;子群组IOOb中包括一个系统单元30 ;子群组IOOc中包括两个系统单元30。 For example, a subgroup with a subgroup IOOa IOOc IOOb and stacked, wherein the subgroup comprises four IOOa system unit 30; IOOb subgroup comprises a system unit 30; IOOc subgroup includes two systems unit 30. 子群组间可以使用焊料、银胶、或其他适用的导电材料达成电性相连。 Solder may be used between the sub-groups, silver paste, or other suitable electrically conductive material electrically connected reached. 然而,子群组间非以形成电性连接为必要,单纯结构上的组装关系也可成立于其间。 However, among non-subgroup to form an electrical connection it is necessary, the simple structure of the assembly may be established therebetween. 惟附图中系统单元30的型态或数量仅为例示,非用以限制本发明的实施方式,本申请案中其他实施例中揭示的系统单元型态与连接方式在不显相冲突下皆可为本实施例采纳。 However the system unit or the number of reference patterns 30 are illustrative only, not to limit the embodiments of the present invention, in other embodiments of the present application disclosed embodiments the system unit and the connection patterns are in conflict with no significant Example of the present embodiment can be adopted.

[0069] 图14(a)显示子群组及其中单一系统单元30同一边的宽度L2、L1。 [0069] FIG. 14 (a) on the same side of the display width of the sub-group and a single system unit 30 L2, L1. L1/L2定义为X,且O. 05彡X彡1,优选地,O.1彡X彡O. 2,0. 2彡X彡O. 3,0. 3彡X彡O. 4,0. 4彡X彡O. 5、0.5彡父彡0.6、0.6彡父彡0.7、0.8彡父彡0.9、及/或0.9彡父彡I。 L1 / L2 is defined as X, and X San San O. 05 1, preferably, X O.1 San San O. 2,0. 2 X San San O. 3,0. 3 San San O. 4,0 X 4 X Pie Pie Pie O. 5,0.5 parent parent Pie Pie Pie 0.6, 0.6 0.7, 0.8 0.9 San San parent and / or parent San San 0.9 I. 具体而言,L1/L2 =260/600、580/1000。 Specifically, L1 / L2 = 260 / 600,580 / 1000. 图14(b)显示依据本发明实施例的子群组的剖面图,其轮廓呈现梯形。 FIG. 14 (b) show a sectional view according to an embodiment of the subgroup of the present invention, which exhibits a trapezoidal profile. 梯形各个尺寸的关系如下:L2 > L1、L2 > L3。 Relationship between the size of the respective trapezoidal follows: L2> L1, L2> L3. 一或多个系统单元30在子群组中的位置如图所示,惟其相对于材料40边界的位置可任意移动,亦即,系统单元30的至少一个边界可恰好接触到或者超过材料40的边界。 One or more system unit 30 in the position shown in FIG subgroup, although its boundaries with respect to the material 40 may be any position, i.e., the system unit can exactly contact with at least one boundary 30 to the material 40 or over boundary. 例如,系统单元30可接近、接触、或突出材料40的上缘40a及/或下缘40b。 For example, the system unit 30 is accessible, in contact with, or protruding upper edge 40a of the material and / or the lower edge 40b.

[0070] 如图15所示,在本发明实施例中,发光系统、子群组、或系统单元(在本实施例中统称为光源)可与波长转换材料相整合。 [0070] As shown in FIG 15, in the embodiment of the present invention, a light emitting system, subgroup, or the system unit (collectively referred to as a light source in the embodiment according to the present embodiment) may be integrated with the wavelength converting material. 具体而言,波长转换材料可由单独的材料40a、单独的材料40b、或材料40a及40b的组合所构成。 Specifically, a separate material may be the wavelength converting material, 40b, 40a or a combination of a separate material 40a and material 40b constituted. 具体而言,材料40a为荧光粉体、染料、半导体材料、或陶瓷粉体等;材料40b为荧光块体、烧结块体、陶瓷块体、有机胶体、或无机胶体等。 Specifically, the material 40a is phosphor powder, a dye, a semiconductor material, ceramic powder, or the like; a fluorescent material 40b block, sintered block, the ceramic block, organic colloid, and inorganic colloid. 材料40a可于前述光源工艺中或之后与材料40、材料40b、或其二者相整合。 Material 40a may be on the light source or after the process material 40, the material 40b, or both integrate. 例如,荧光粉体可先与材料40混合后再覆盖或填充于系统单元30之上,或者波长转换材料可利用贴合、点胶、网版印刷、沉积等方式形成于系统单元30之上。 For example, the phosphor material 40 may be mixed with the first cover material and then filled in or on the system unit 30, a wavelength converting material, or may utilize bonding, dispensing, screen printing, deposition or the like is formed over the system unit 30. 图(a)中,材料40a、材料40b、或材料40a及40b配置于光源的出光方向上,优选地,覆盖于光源上。 FIG. (A), the material 40a, the material 40b, disposed in the light source direction or materials 40a and 40b, preferably, the cover on the light source. 图(b)中,材料40a混杂于材料40中。 FIG. (B), the hybrid material 40a in the material 40. 图(C)中,材料40a及40b的配置方式为前述(a)及(b)态样的结合。 FIG. (C), the materials 40a and 40b to the configuration of (a) and (b) binding aspects. 图(d)中,材料40a、材料40b、或材料40a及40b配置于光源的出光方向上,但却未与其直接接触,优选地,与材料40相接。 FIG. (D), the material 40a, the material 40b, the light direction or light source arranged material 40a and 40b, but not in direct contact with, preferably, 40 in contact with the material.

[0071] 如图16所示,发光系统、子群组、或系统单元(在本实施例中统称为光源)发出蓝色光,其上并配置波长转换材料。 [0071] As shown in FIG. 16, the lighting system, subgroup, or the system unit (collectively referred to as a light source in the embodiment according to the present embodiment) emits blue light, on which the wavelength converting material and arranged. 波长转换材料的相关实施方式可参考前述图15的说明。 Related embodiment, the wavelength converting material may be described with reference to FIG. 15 of the foregoing. 图(a)中,波长转换材料可发射绿色光或黄色光。 FIG. (A), the wavelength conversion material may emit green light or yellow light. 图(b)中,波长转换材料可发射红色光及黄色光。 FIG. (B), the wavelength conversion material may emit red light and yellow light. 图(C)中,一区域的波长转换材料发射黄色光,另一区域的波长转换材料发射红色光,且此两区域彼此不相重叠。 FIG. (C), a region of a wavelength converting material emitting yellow light, the wavelength converting material emitting red light of another region, and these two regions do not overlap each other. 优选地,黄色光区域大于红色光区域。 Preferably, the yellow light is greater than the area of ​​the red light region. 图(d)中,一区域的波长转换材料发射黄色光,另一区域的波长转换材料发射红色光,且此两区域彼此相重叠。 FIG. (D), the wavelength converting material emitting yellow light of a region, the other region of wavelength converting material emitting red light, and this two-phase region overlap with each other. 优选地,黄色光区域较红色光区域接近光源。 Preferably, an area near the light source than the yellow and red light region. 具体而言,上述各态样中,各色光由相应的荧光粉体或荧光块体经蓝色光激发后产生。 Specifically, each of the above aspects, the light generated by the respective color phosphors or phosphor mass after blue light excitation. [0072] 如图17(a)所示,发光系统或子群组中的部分或数个系统单元发射蓝色光,另一部分或数个的系统单元发射红色光,材料40中混杂有绿色或黄色荧光粉体,优选地,蓝色光系统单元的数量少于红色光系统单元的数量,例如,蓝色光系统单元与红色光系统单元的数量比至少为N/1+N(N属于任意正整数)。 [0072] FIG. 17 (a), the lighting system or part of a group or several sub-systems unit emits blue light, another part of the system or several unit emits red light, the material 40 mixed in the yellow-green phosphors, preferably, the amount of blue light is smaller than the number of the system unit of the system unit of red light, for example, the number of blue light and red light system unit of the system unit ratio of at least N / 1 + N (N arbitrary positive integer) . 或者,蓝色光系统单元与红色光系统单元的功率比为N1/N2 (NI及N2属于任意正整数)。 Alternatively, the power ratio of blue light and red light system unit of the system unit N1 / N2 (NI and N2 arbitrary positive integer). 优选地,蓝色光系统单元的功率大于红色光系统单元的功率,例如,N1/N2 = 3. 0/1. 0,2. 5/1. 0,2. 0/1. 0,1. 5/1. O、或1. 1/1. O。 Preferably, the power system unit is larger than the blue light and red light power system unit, for example, N1 / N2 = 3. 0/1. 0,2. 5/1. 0,2. 0/1. 0,1. 5 / 1. O, or 1. 1/1. O. 如图17 (b)所示,发光系统、子群组中的系统单元30发射蓝色光,且材料40中混杂有红色及黄色荧光粉体,优选地,红色及黄色荧光粉体均匀地配置于材料40中的一定空间中,然非均匀、渐层、离散、或交错式分布亦可以选择性采用。 FIG. 17 (b), the light emitting system, system unit 30 in the sub-group of blue light emission, and the material 40 is mixed with the red and yellow phosphor, preferably, the red and yellow phosphor is uniformly disposed on the body the material 40 in a space, then the non-uniform gradient, discrete, or staggered distribution can also be selectively employed.

[0073] 如图18(a)所示,发光系统或子群组中的一部分系统单元发射蓝色光,另一部分的系统单元发射红色光,材料40及40b中混杂具有相同或相异发射频谱的黄色荧光粉体。 [0073] FIG. 18 (a), the light emitting system or a portion of the subgroup system unit emits blue light, another part of the system unit emitting red light, the mixed material 40 and 40b have the same or different emission spectra yellow phosphor powder. 如图18 (b)所示,发光系统或子群组中的有效或作动的系统单元发射蓝色光,材料40及40b中混杂有适当比例的红色及黄色荧光粉体。 FIG. 18 (b), the light emitting or active system or the actuating system unit subgroup emitting blue light, and 40b material 40 is mixed with the proper proportion of red and yellow phosphor powder. 如图18(c)所示,发光系统或子群组中的有效或作动系统单元发射蓝色光,材料40中混杂有黄色荧光粉体,材料40b中混杂有红色荧光粉体。 FIG. 18 (c), the light emitting system or a subgroup or effective actuation system unit emits blue light, a yellow material mixed with a phosphor powder 40, the material 40b mixed red phosphor powder.

[0074] 如图19(a)所示,发光系统或子群组中的一部分系统单元发射蓝色光,一部分的系统单元发射绿色光,一部分的系统单元发射红色光。 [0074] FIG. 19 (a), the light emitting system or a portion of the subgroup system unit emits blue light, a portion of the system unit emits green light, and a part of the system unit emits red light. 如图19(b)所示,发光系统或子群组中的一部分系统单元发射蓝色光,另一部分的系统单元发射红色光,材料40b配置于此两部分系统单元之上,并混杂有绿色荧光粉体。 FIG. 19 (b), the light emitting system or a portion of the subgroup system unit emits blue light, another part of the system unit emitting red light, the material 40b on top of this two part system configuration unit, and mixed with green fluorescent powder. 如图19(c)所示,发光系统或子群组中的一部分系统单元发射蓝色光,另一部分的系统单元发射红色光,材料40b配置于蓝色光系统单元之上,并混杂有绿色荧光粉体。 FIG. 19 (c), the light emitting system or a portion of the subgroup system unit emits blue light, another part of the system unit emitting red light, blue material 40b is disposed on the optical system unit, and the mixed green phosphor body. 如图19(d)所示,发光系统或子群组中的一部分系统单元发射蓝色光,另一部分的系统单元发射红色光,材料40b配置于部分或局部的蓝色光系统单元之上,并混杂有绿色荧光粉体。 FIG. 19 (d), the light emitting system or a portion of the subgroup system unit emits blue light, another part of the system unit emitting red light, the material 40b is disposed on part or portion of the blue light system unit, and mixed green phosphor powder.

[0075] 如图20(a)〜20(c)所示,发光系统或子群组中的有效或作动系统单元发射蓝色光。 [0075] FIG. 20 (a) ~20 effective system or actuating unit emits blue light (c), the light emitting system or a sub-group. 图(a)中,一区域的材料40b混杂有绿色荧光粉体,另一区域的材料40b混杂有红色荧光粉体,优选地,绿色荧光粉体区域大于红色荧光粉体区域。 FIG. (A), the material of a region 40b of the body mixed with a green phosphor, another region of the material 40b mixed with red fluorescent powder, preferably the green fluorescent body is greater than the area of ​​the red fluorescent powder area. 图(b)中,一区域的材料40b混杂有绿色荧光粉体,另一区域的材料40b混杂有红色荧光粉体,且此两区域彼此重叠,优选地,短波长发光区域较长波长发光区域接近系统单元。 FIG. (B), the material of a region 40b of the body mixed with a green phosphor, another region of the material 40b mixed with red fluorescent powder, and these two regions overlap each other, preferably, the short-wavelength region of longer wavelength emission light-emitting region close to the system unit. 图(c)中,材料40b混杂有红色及黄色荧光粉体。 FIG. (C), the material 40b mixed with the red and yellow phosphor powder. 如图20(d)所示,发光系统或子群组中的有效或作动系统单元发射人眼无法感知的射线,例如:紫外线。 FIG. 20 (d), the light emitting system or a subgroup valid or actuation systems the human eye can not perceive unit emits radiation, for example: ultraviolet. 包括蓝色、绿色、及红色荧光粉体的材料40b分别配置于系统单元之上。 Including blue, green, and red phosphor powder material 40b are arranged on top of the system unit. 此三部分的面积大小可依照相应荧光粉体的效率、衰退特性、厚度调整。 The size of this area may be three parts, decay characteristics, to adjust the thickness of the phosphor powder in accordance with the corresponding efficiency.

[0076] 在以上或后续诸实施例中,应用上,蓝色光搭配适当的比例的黄色光可产生冷白光;蓝色光搭配适当的比例的黄色光及红色光可产生暖白光。 [0076] In the above embodiments all or subsequent embodiment, the application with the appropriate ratio of blue light and yellow light may generate a cool white; blue light with yellow light in suitable proportions and red light can produce warm white light. 蓝光与红光功率比约为2 :1〜5 : 1,例如:2.5 : 1、3 : 1,3. 5 : 1、4 : 1,4. 5 : I。 Blue and red light power ratio of about 2: 1 ~ 5: 1, for example: 2.5: 1,3: 1,3 5:. 1,4:. 1,4 5: I. 绿光与黄光的功率比约为I : 4。 Green and yellow light power ratio of about I: 4. 惟附图中材料40及40b的大小比例及配置区域仅为例示,非为本发明的唯一实施方式,使用者当可依情况调整、交换。 However figures 40 and 40b of the material and the size ratio region merely exemplary configuration, the only way of non embodiment of the present invention, when a user adjustment to follow the situation and exchange. 此外,未有荧光粉体配置于其出光路径上的系统单元亦可以选择性地为材料40、材料40b、或其二者所覆盖。 Further, No disposed thereon the phosphor powder on the system unit can also be selectively optical path for the material 40, the material 40b, or both are covered. 材料40及/或材料40b与荧光粉体搭配方式亦可以为荧光块体、烧结块体、陶瓷块体、染料、或其组合所取代。 Material 40 and / or the material 40b and the phosphor powder with the embodiment may also be substituted with phosphor that block, sintered block, the ceramic block, a dye, or combinations thereof.

[0077] 光电系统或子群组除包括可发射光线的系统单元30外,更可以包括一或多个集成电路(ic),用以控制全部或部分的系统单元30,或作为全部或部分的系统单元30的电路中继,如图21(a)所示。 [0077] Optical systems or sub-groups in addition to the system comprising a light emitting unit 30 may further include one or more integrated circuits (IC), for controlling all or part of the system unit 30, or as all or part of the the system unit 30 of the relay circuit shown in FIG. 21 (a). 除集成电路,光电系统或子群组更可以连接系统单元30'。 In addition to the integrated circuit, or a sub-group of photovoltaic systems can be connected to the system unit 30 more '. 在实施例中,系统单元30'为供电系统,例如,化学电池、太阳能电池、燃料电池等。 In an embodiment, the system unit 30 'to the power supply system, e.g., a chemical battery, solar cells and fuel cells. 在实施例中,系统单元30'为变压系统、变频系统、整流系统。 In an embodiment, the system unit 30 'is a pressure swing systems, inverter system, rectification system. 具体而言,系统单元30'为开关切换式电源(Switched Mode Power Supply ;SWMP)、高频变压器。 Specifically, the system unit 30 'is a switch mode power supply (Switched Mode Power Supply; SWMP), high-frequency transformer.

[0078] 图22(a)〜图22(f)显示光电系统或子群组的数种配置型态的示意图,其中,系统单元30非以皆为发光元件为限,一或两个以上系统单元30可以为非具发光功能的单元,如前述或后续诸实施例中所描述者。 [0078] FIG. 22 (a) ~ FIG. 22 (f) shows a schematic of a photovoltaic system or of several sub-groups configuration patterns, wherein the system unit 30 to the non-light emitting element are both limited to, one or more systems It means having a non-light emitting unit 30 may function as all preceding or following those described in the embodiments.

[0079] 如图23A所示,在依据本发明的具体实施例的光电系统的制造方法中,首先提供载具10 (在本实施例中亦称为暂时基板),在暂时基板10上以旋转涂布、蒸镀或印刷等方式形成上下表面具黏性的层或结构20 (在本实施例中亦称为第一连接层),并可以通过挑选放置系统(Pick&Place system)将多个未封装的系统单元30 (在本实施例中亦称为光电元件)放置并连接在上述第一连接层20之上,并在多个光电元件30的间隔区域形成多个走道区304,其中光电元件30放置时的对位精准度主要由挑选放置系统决定,例如,误差不超过15 μ m。 [0079] As shown in FIG. 23A, in the method of manufacturing a photovoltaic system based on the specific embodiment of the present invention, first a carrier 10 (in the present embodiment, also referred to as the temporary substrate), on a temporary substrate 10 to rotate other coating, vapor deposition or printing are formed with upper and lower surfaces of the adhesive layer or structure 20 (in the present embodiment is also referred to as a first embodiment of the connection layer), and can choose placement system (pick & place system) a plurality of non-encapsulated the system unit 30 wherein the photovoltaic element 30 is placed on and connected to the first connection layer 20, and forming a plurality of regions walkway space area 304 in the plurality of photovoltaic elements 30 (also referred embodiment the photovoltaic element in the present embodiment) when alignment accuracy is mainly determined by the placement of the selection system is placed, for example, an error of not more than 15 μ m. 其中上述光电元件30可为发光二极管,其结构可包含基板303、形成在基板上的半导体外延层302与至少一个电极301。 Wherein the photoelectric element 30 may be a light emitting diode structure may include a substrate 303, a semiconductor epitaxial layer is formed on the substrate 302 and the at least one electrode 301. 上述半导体外延层302可包含第一导电型半导体层、活性层,以及第二导电型半导体层。 The semiconductor epitaxial layer 302 may include a first conductive type semiconductor layer, active layer, and a second conductive type semiconductor layer. 此外,基板303可以选择性地在制造流程中移除,以缩小系统尺寸。 In addition, the substrate 303 may be selectively removed in the manufacturing process, to reduce the system size. 在优选实施例中,此光电元件30的至少一个电极301与上述第一连接层20接触。 This photoelectric least a first electrode 301 in contact with the connection layer 20 elements 30 in the preferred embodiment. 上述多个光电元件30可发出具有相同或不同波长的光,其发光范围可从紫外光至红外线。 The plurality of photoelectric elements 30 may emit light having the same or a different wavelength, the emission from the ultraviolet to the infrared range.

[0080] 上述暂时基板10的材料可选自硅胶(silicone)、玻璃、石英、陶瓷、合金或印刷电路板(PCB);上述第一连接层20的材料可选自胶带,例如为热移除胶带(thermal releasetape)、紫外线移除胶带(UV release tape)、化学移除胶带(Chemical release tape)、耐热胶带或蓝膜;上述光电元件30的基板303的材料可选自蓝宝石(Sapphire)、碳化娃(SiC)、氧化锌(ZnO)、氮化镓(GaN)或硅、玻璃、石英、或陶瓷等高导热基板;上述光电元件30的第一导电型半导体层、活性层及第二导电型半导体层的材料包含一种或一种以上的物质,选自镓(Ga)、铝(Al)、铟(In)、砷(As)、磷(P)、氮(N)以及硅(Si)所构成群组。 [0080] The material of the temporary substrate 10 may be selected from silica gel (Silicone), glass, quartz, ceramic, alloy, or a printed circuit board (the PCB); material of the first connection layer selected from the adhesive tape 20, heat is removed e.g. tape (thermal releasetape), the tape is removed ultraviolet (UV release tape), the tape is removed chemically (chemical release tape), a heat resistant tape or film is blue; material of the substrate 303 of the photovoltaic element 30 may be selected from sapphire (sapphire), baby carbide (SiC), zinc oxide (ZnO), gallium nitride (GaN), or silicon, glass, quartz, ceramic or high thermally conductive substrate; a first conductivity type semiconductor layer of the photovoltaic element 30, the active layer, and a second conductive type semiconductor material layer comprises one or more substances selected from gallium (Ga), aluminum (Al), indium (in), arsenic (As), phosphorus (P), nitrogen (N), and silicon (Si ) composed of a group.

[0081] 接着,如图23B所示,提供材料40 (在本实施例中具体为粘性胶材)填满上述多个光电元件30的走道区304,并且覆盖上述多个光电元件30及未被光电元件覆盖的第一连接层20表面。 [0081] Next, as shown in FIG. 23B, providing a material 40 (in the present embodiment is particularly viscous adhesive material) fills the plurality of photoelectric element aisle 30 of the 304 areas, and covering the plurality of photoelectric elements 30 and is not covering the surface of the photovoltaic element 20 of the first connection layer. 其中上述粘性胶材40可以利用旋转涂布、印刷或铸模灌胶等方式形成,且粘性胶材40亦可为弹性材料,其材料可选自娃胶(silicone rubber)、娃树脂(siliconeresin)、娃胶、弹性聚氨酯(弹性PU)、多孔聚氨酯(多孔PU)、丙烯酸橡胶(acrylicrubber)或管芯切割胶,如蓝膜或紫外线固化胶(UV胶)。 Wherein said tacky adhesive 40 may be spin coating, casting or printing form gluing, etc., and has a viscosity adhesive 40 may also be an elastic material, which material may be selected from the baby gum (silicone rubber), baby resin (siliconeresin), baby rubber, elastomeric polyurethane (elastic PU), porous polyurethane (porous PU), acrylic rubber (acrylicrubber) or die cut plastic, such as blue or ultraviolet curable adhesive film (UV adhesive). 在本实施例中,也可进行抛光工艺(polish process),使上述多个光电元件30的表面平坦化,并让上述光电元件30表面不会产生过剩(overflow)或凹陷的粘性胶材40。 In the present embodiment, the polishing process may be performed (polish process), the surface of the plurality of photovoltaic elements 30 flattened, and the surface of the photovoltaic element 30 so that no excessive (overflow) or recessed tacky adhesive 40.

[0082] 随后,如图23C所示,提供次载具50 (在本实施例中亦称为永久基板),并将之与涂布粘性胶材40的多个光电元件30接合,此接合方式可为热压工艺。 [0082] Subsequently, as shown in FIG. 23C, the submount 50 to provide (in the present embodiment, the substrate also called permanent), and engaged with the plurality of photovoltaic elements 40 of applying a viscous sealant 30, this engagement It can be a hot-pressing process. 在优选实施例中,此永久基板50与上述光电元件30的基板303直接接触。 In preferred embodiments, direct contact with the substrate 50 of the photoelectric element 30 is 303 this permanent substrate. 上述永久基板50的材料可为硅胶(si I icone)、玻璃、石英、陶瓷、合金或印刷电路板(PCB)。 Material of the permanent substrate 50 may be a silica gel (si I icone), glass, quartz, ceramic, alloy, or a printed circuit board (PCB). [0083] 接着,如图23D所示,可以激光剥离、加热分离胶膜图案、溶解胶膜图案等方式移除上述暂时基板10、第一连接层20与部分粘性胶材40后裸露出多个光电元件30的电极301及部分半导体外延层302。 [0083] Next, as shown, the laser can be peeled off, heating the separation film pattern, a pattern film was dissolved in FIG. 23D, etc. to remove the temporary substrate 10, a first layer 20 and the connecting portion 40 after the exposed tacky adhesive a plurality of electrode 301 of the photovoltaic element 30 and a portion of the semiconductor epitaxial layer 302.

[0084] 最后,如图23E所示,以黄光导线接合、引线接合的方式形成电性连接60(在本实施例中具体为多条导线)以连接多个光电元件的电极301,以串联此多个光电元件30。 [0084] Finally, FIG. 23E, yellow to wire bonding, the wire bonding electrode 301 is formed is electrically connected to 60 (particularly in the present embodiment is a plurality of wires) to connect a plurality of photoelectric elements in series this plurality of photoelectric elements 30. 其中上述导线60的材料可为金、铝、合金或多层金属,以形成系统级光电结构。 Wherein the material of the wire 60 may be gold, aluminum, metal alloys or multilayer, to form a photovoltaic system level architecture.

[0085] 图24A〜图24G为根据本发明另一具体实施例制造流程的结构示意图(其中与图23的实施例相近或相同的元件将赋予相同的标号,以下同)。 [0085] FIG 24A~ FIG 24G is a schematic view according to another embodiment of the manufacturing process (FIG. 23 elements wherein similar or the same embodiment will be given the same reference numerals, the same hereinafter). 如图24A所示,提供暂时基板10,在暂时基板10上以旋转涂布、蒸镀或印刷等方式形成上下表面具粘性的第一连接层20,并可以通过挑选放置系统(Pick&Place system)将多个未封装的光电元件30放置并连接在上述第一连接层20之上,并在多个光电元件30的间隔区域形成多个走道区304,其中光电元件放置时的对位精准度以不超过挑选放置系统的容许误差为限,例如不超过15 μ tm。 24A, providing the temporary substrate 10, and the like to spin coating, vapor deposition or printing a first connection layer 20 is formed with upper and lower surfaces of tackiness on a temporary substrate 10, and can pick placement system (Pick & Place system) will be multiple unpackaged photovoltaic element 30 is placed on and connected to the first connection layer 20, and forming a plurality of regions walkway space area 304 in the plurality of photoelectric elements 30, wherein the alignment accuracy when the photovoltaic elements are placed so as not to placement system selection over a limited tolerance, such as no more than 15 μ tm. 其中上述光电元件30可为发光二极管,其结构可包含基板303、形成在基板上的半导体外延层302与至少一个电极301。 Wherein the photoelectric element 30 may be a light emitting diode structure may include a substrate 303, a semiconductor epitaxial layer is formed on the substrate 302 and the at least one electrode 301. 上述半导体外延层302可包含第一导电型半导体层、 活性层,以及第二导电型半导体层。 The semiconductor epitaxial layer 302 may include a first conductive type semiconductor layer, active layer, and a second conductive type semiconductor layer. 在优选实施例中,此光电元件30的至少一个电极301与上述第一连接层20接触。 This photoelectric least a first electrode 301 in contact with the connection layer 20 elements 30 in the preferred embodiment. 上述光电元件30可发出具有相同或不同波长的光,其发光范围可从紫外光至红外线。 The photoelectric element 30 may emit light having the same or a different wavelength, the emission from the ultraviolet to the infrared range.

[0086] 上述暂时基板10的材料可选自硅胶(silicone)、玻璃、石英、陶瓷、合金或印刷电路板(PCB);上述第一连接层20的材料可选自胶带,例如为热移除胶带(thermal releasetape)、紫外线移除胶带(UV release tape)、化学移除胶带(Chemical release tape)、耐热胶带、蓝膜或金属;上述光电元件30的基板303的材料可选自蓝宝石(Sapphire)、碳化硅(SiC)、氧化锌(ZnO)、氮化镓(GaN)或硅、玻璃、石英、GaAs、或陶瓷等高导热基板;上述光电元件30的第一导电型半导体层、活性层及第二导电型半导体层的材料包含一种或一种以上的物质,选自镓(Ga)、·铝(Al)、铟(In)、砷(As)、磷(P)、氮(N)以及硅(Si)所构成群组。 [0086] the temporary substrate material is selected from silica gel 10 (Silicone), glass, quartz, ceramic, alloy, or a printed circuit board (the PCB); material of the first connection layer selected from the adhesive tape 20, heat is removed e.g. tape (thermal releasetape), the tape is removed ultraviolet (UV release tape), the tape is removed chemically (chemical release tape), a heat resistant tape, film, or metallic blue; material of the substrate 303 of the photovoltaic element 30 may be selected from sapphire (sapphire ), silicon carbide (SiC), zinc oxide (ZnO), gallium nitride (GaN), or silicon, glass, quartz, GaAs, or a ceramic substrate with high thermal conductivity; the photoelectric element 30 of the first conductive type semiconductor layer, the active layer and the material of the second conductivity type semiconductor layer comprising one or more substances selected from gallium (Ga), · aluminum (Al), indium (in), arsenic (As), phosphorus (P), nitrogen (N ) and silicon (Si) constituting the group.

[0087] 此外,如图24A所示,在本发明的系统级光电结构中,也可先以荧光材料P包覆每个上述光电元件30。 [0087] Further, as shown in FIG photovoltaic system level structure of the present invention may also be first coated with a fluorescent material P for each of the photovoltaic element 30 24A. 通过荧光材料的平均被覆,可提供一个稳定的白光光源,并减少之后工艺上每个光电元件30的白光的差异性。 By averaging the coating fluorescent material can provide a stable white light source, and to reduce the difference of white light after the process on each of the photovoltaic element 30. 其中上述荧光材料P可以旋转涂布、沉积、点胶、刮刀或铸膜灌胶等方式形成。 Wherein the fluorescent material P may be spin coating, deposition, dispensing, doctor blade casting or potting the like. 在另一实施例中,上述多个光电元件30也可各别包覆不同的突光材料。 In another embodiment, the plurality of photoelectric elements 30 may be coated with different individual light material projection. 在另一实施例中,上述多个光电兀件30也可以选择性的各别包覆不同的突光材料,而非所有的光电兀件30都包覆,以混合出不同的色光。 Different ones of said plurality of photoelectric Wu member 30 may be selectively coated with respective projecting photosensitive material In another embodiment, rather than all the photoelectric Wu member 30 are covered, to mix the lights of different colors. 例如在实施例中,多个光电兀件30可为蓝光发光二极管,并将多个光电元件30中的三个光电元件30视为一组,其中第一个光电元件包覆的荧光材料P可为红色荧光粉、第二个光电元件包覆的荧光材料P可为绿色突光粉,且第三个光电兀件可不包覆突光材料,以混合发出白光。 In an example embodiment, the plurality of photoelectric Wu member 30 may be a blue LED, and a plurality of photovoltaic elements 30 of the three photovoltaic element 30 as a group, in which a first photovoltaic element may be coated with a fluorescent material P red phosphor, the second fluorescent material covering the photovoltaic element P may be a projection light green powder, and the third photoelectric Wu light projecting member may not cover material to emit white light mixed.

[0088] 接着,如图24B所示,提供粘性胶材40填满上述多个光电元件30的走道区304,并且覆盖上述多个光电元件30及未被光电元件覆盖的第一连接层20表面。 [0088] Next, as shown in FIG. 24B, to provide a viscous adhesive 40 fills the plurality of photoelectric element 30 aisle region 304, and the surface of the first cover 30 and the connection layer 20 of the plurality of photovoltaic elements are not covered by the photovoltaic element . 其中上述粘性胶材40可以利用旋转涂布、印刷或铸模灌胶等方式形成,且粘性胶材40可为弹性材料,其材料可选自娃胶(silicone rubber)、娃树脂(silicone resin)、娃胶、弹性PU、多孔PU、丙烯酸橡胶(acrylic rubber)或管芯切割胶,如蓝膜或UV胶。 Wherein said tacky adhesive 40 may be spin coating, casting or printing form gluing, etc., and a viscous adhesive material 40 may be an elastomeric material, which material may be selected from the baby gum (silicone rubber), baby resin (silicone resin), baby plastic, elastic PU, porous PU, acrylic rubber (acrylic rubber) or die cut plastic, such as blue or UV adhesive film. 在本实施例中,也可进行抛光工艺(polishprocess),可使上述多个光电元件30的表面平坦化,并让上述光电元件30表面不会产生过剩(overflow)或凹陷的粘性胶材40。 In the present embodiment, the polishing process may be performed (polishprocess), causes said plurality of photoelectric element 30 planarized surface, and the surface of the photovoltaic element 30 so that no excessive (overflow) or recessed tacky adhesive 40.

[0089] 随后,如图24C所示,提供永久基板50,并将之与涂布粘性胶材40的多个光电元件30接合,此接合方式可为热压工艺。 [0089] Subsequently, as shown in FIG 24C, the substrate 50 to provide permanent, and of applying a viscous adhesive engagement with a plurality of photovoltaic elements 30 40, this engagement may be hot-pressing process. 在优选实施例中,此永久基板50与上述光电元件30的基板303直接接触。 In preferred embodiments, direct contact with the substrate 50 of the photoelectric element 30 is 303 this permanent substrate. 上述永久基板50的材料可为玻璃或石英等高透明度基板。 Material of the permanent substrate 50 may be a high transparency glass or quartz substrate.

[0090] 接着,如图24D所示,可以激光剥离、加热分离胶膜图案、溶解胶膜图案等方式移除上述暂时基板10、第一连接层20与部分粘性胶材40后裸露出多个光电元件30的电极301及部分半导体外延层302。 [0090] Next, as shown, the laser can be peeled off, heating the separation film pattern, a pattern film was dissolved in FIG. 24D, etc. to remove the temporary substrate 10, a first layer 20 and the connecting portion 40 after the exposed tacky adhesive a plurality of electrode 301 of the photovoltaic element 30 and a portion of the semiconductor epitaxial layer 302.

[0091] 然后,如图24E所示,以电镀或蒸镀的方式,将多个扩张电极(Fan-outelectrode) 305连接在多个光电元件的电极301之上。 [0091] Then, as shown, plating or vapor deposition in a manner, a plurality of expandable electrodes (Fan-outelectrode) 305 24E connecting electrode 301 on a plurality of photoelectric elements. 其中扩张电极305的面积大于光电元件的电极301,可增加后续封装的对位容忍度。 Wherein the expansion of the area of ​​electrode 301 is larger than the electrode 305 of the photovoltaic element can be increased alignment tolerance for subsequent packaging. 此外,由于加大扩张电极305的面积,将更可有效把热源导到后续封装的金属或PCB等基板上。 Further, since the expansion of the area of ​​electrode 305 is increased, the more effective the heat source leads to the subsequent packaging and the like or a metal PCB substrate. 上述扩张电极的材料可为金、招、合金或多层金属结构。 Expansion of the materials described above may be gold electrode, strokes, metal alloy, or a multilayer structure.

[0092] 最后,如图24F〜24G所示,切割此多个光电元件,形成各别的管芯后,通过至少一焊料(solder) 601将之黏接至次载体(submount) 60之上,以形成系统级光电结构。 After [0092] Finally, as shown in FIG 24F~24G, this cutting plurality of photoelectric elements, forming respective die through at least one solder (solder) 601 adhered to the to the 60 times over the carrier (submount), to form a photovoltaic system level architecture. 上述的次载体60可以是导线架(lead frame)或大尺寸镶嵌基底(mounting substrate),以方便系统级光电结构的电路规划并提高其散热效果。 60 times the above-described carrier may be a lead frame (lead frame) or a large-sized mosaic substrate (mounting substrate), to facilitate the circuit configuration of a photoelectric-level planning system and increase its cooling effect.

[0093] 值得注意的是,上述两实施例中的工艺步骤也可互相参照或组合,如第一实施例中的光电元件也可选择性的包覆荧光材料,或在图23D后也可接续图24E的制作扩张电极、切割芯片等后续步骤;同理,第二实施例也可在图24D后接续图23E的步骤,以导线电连接多个光电兀件。 [0093] Notably, the above-described embodiment two process steps can also refer to each other or a combination of, for example, the photovoltaic element also optionally coating a fluorescent material as in the first embodiment, or may be subsequent in Figure 23D making a subsequent expansion step electrodes, cutting chips, etc. FIG. 24E; similarly, the second embodiment may also be a step following FIG. 23E in Figure 24D, in order to electrically connect the plurality of photoelectric Wu wire member.

[0094] 此外,在本发明另一实施例中,接续在图23B或图24B之后,如图25A所示,可提供永久基板50,并先将此永久基板50接合在第二连接层70之上后,将之与涂布粘性胶材40的多个光电元件30接合,此接合方式可为热压工艺。 [0094] Further, in another embodiment of the present invention, after the continuation of FIG. 23B or 24B, the FIG. 25A, the permanent substrate 50 may be provided, and this first substrate 50 is permanently bonded to the second interconnect layer 70 of after the 30 engage with the plurality of photoelectric elements of applying a viscous sealant 40, this engagement may be a hot-pressing process. 其中上述第二连接层70的材料可为SiOx, SiNx、硅胶(silicone)。 Wherein said second material layer 70 may be connected SiOx, SiNx, silicone (silicone). 在本发明另一实施例中,接续在图23B或图24B之后,如图25B所示,上述第二连接层70也可为包含多个通道701的第二连接层70',可增加本系统级光电元件的散热,并可提升可承受的瓦数。 In another embodiment of the present invention, after the continuation of FIG. 23B or 24B, the shown in Figure 25B, the second connection layer 70 may also comprise a plurality of channels 701 may be connected to a second layer 70 ', the system can be increased cooling stage photovoltaic element, and to enhance the wattage can withstand. 其中上述通道701的材料可为金属,如铜、铝、镍或合金。 Wherein said channel 701 may be a metallic material, such as copper, aluminum, nickel or an alloy. 此外,通道701亦可与第二连接层70'为相同的材料,例如蓝宝石、金属、氮化硅、氧化铝。 Further, the channel layer 701 may also be connected to the second 70 'of the same material, such as sapphire, metal, silicon nitride, aluminum oxide.

[0095] 在本发明另一实施例中,接续在图23B或图24B之后,如图26所示,可提供永久基板50,并先将此永久基板50利用中介层(未显示)先连接第一反射层80,再接合在第二连接层70之上后,将之与涂布粘性胶材40的多个光电元件30接合,此接合方式可为热压工艺。 [0095] In another embodiment of the present invention, after the continuation of FIG. 23B or 24B, the 26, the permanent substrate 50 may be provided, and the permanent substrate 50 using this first interposer (not shown) connected to the first section after a reflection layer 80, and then engaged on the second connection layer 70, 30 will engage with the plurality of photoelectric elements of applying a viscous sealant 40, this engagement may be a hot-pressing process. 其中,中介层的材料例如是SiOx, SiNx、娃胶(silicone)等。 Wherein the material of the interposer, for example, SiOx, SiNx, baby rubber (Silicone) and the like. 上述第一反射层80的材料可为银、铝或钼等金属,或者为由介电质或半导体组成的分布式布拉格反射器(DistributedBragg Reflector ;DBR)。 A distributed Bragg reflector (DistributedBragg Reflector; DBR) material of the first reflective layer 80 and the like may be silver, aluminum, or molybdenum, or by dielectric or a semiconductor component. 在本实施例中,通过此第一反射层80的设计,可增加本系统级光电结构的光取出效率。 In the present embodiment, by designing this first reflective layer 80, the light level can increase the system configuration of a photoelectric extraction efficiency.

[0096] 为了更进一步避免上述多个光电元件30若摆放得太近而可能造成侧向光损耗及/或光萃取效率降低,在本发明另一实施例中,接续在图23B或图24B之后,如图27所示,可选用具有微角锥阵列(Micro-pyramid array)的基板50'。 [0096] In order to further avoid the above-described plurality of photoelectric elements 30 if placed too close to the side may cause the optical loss and / or the light extraction efficiency is lowered, in another embodiment of the present invention, the sequence in FIG. 23B or FIG. 24B Thereafter, as shown in FIG 27, the substrate 50 having optional micro-pyramid arrays (micro-pyramid array) of '. 其中,本微角锥阵列基板50'可利用半导体蚀刻技术制成,基板上的多个微角锥501的形式可为圆锥、三角锥和四角锥等多角锥结构,其中上述微角锥501的底角可介于20〜70度之间。 Wherein, the micro-pyramid array substrate 50 'may be formed using a semiconductor etching technique, forms a plurality of micro pyramids on the substrate 501 may be polygonal pyramid structure is a conical, triangular pyramid and a quadrangular pyramid and the like, wherein said micro-pyramid 501 base angle may be between 20~70 degrees. 在另一实施例中,上述微角锥阵列基板50'的表面还可披覆具高反射率的第二反射层,例如银、铝、钼等金属;此夕卜,上述微角锥阵列基板50'的材料可为硅胶(silicone)、玻璃、石英、陶瓷、合金或印刷电路板(PCB),亦可选用高导热材料以增加元件可靠度,其材料可为铜、铝、陶瓷、硅。 In another embodiment, the surface of the substrate micro-corner cube array 50 'may also be coated with a second reflective layer high reflectivity, such as silver, aluminum, and molybdenum; Bu this evening, the above-described micro-pyramidal array substrate material 50 'may be silicone (silicone), glass, quartz, ceramic, alloy, or a printed circuit board (the PCB), a high thermal conductive material or may choose to increase reliability of the element, the material may be copper, aluminum, ceramics, silicon. 制作时通过对位(alignment)可将此微角锥阵列基板50'与涂布粘性胶材40的多个光电元件30接合,此接合方式可为热压工艺。 By 50 'splice site 30 (Alignment) can use this micro-corner cube array substrate and applying a viscous adhesive plurality of photoelectric elements 40, this engagement may be the production of hot-pressing process. 在本实施例中,通过此微角锥阵列基板50'的设计,可将本系统级光电结构的侧向光反射成为正向光以利增加光萃取效率。 In the present embodiment, by designing this micro-corner cube array substrate 50 'may be laterally photovoltaic system level configuration of a forward light reflected light to facilitate light extraction efficiency increases.

[0097] 以上各附图与说明虽仅分别对应特定实施例,然而,各个实施例中所说明或披露的元件、实施方式、设计准则、及技术原理除在彼此显相冲突、矛盾、或难以共同实施之外,本领域技术人员当可依其所需任意参照、交换、搭配、协调、或合并。 [0097] Although the above description of the accompanying drawings and specific embodiments are merely correspond, however, illustrated in the various embodiments or elements disclosed in the embodiments, the design criteria, in addition to significant technical principle and conflict with each other, conflict, or difficult addition to the common embodiment, those skilled in the art when it desired to follow any reference to the exchange, with, coordination, or combined.

[0098] 虽然本发明已说明如上,然其并非用以限制本发明的范围、实施顺序、或使用的材料与工艺方法。 [0098] Materials and process for the present invention has been described above, although, they are not intended to limit the scope of the invention, the implementation order, or use. 对于本发明所作的各种等同修饰与变更,皆不脱本发明的精神与范围。 For the present invention, various equivalent modifications and variations made, neither release from the spirit and scope of the invention. · ·

Claims (54)

1. 一种系统级光电结构制造方法,其步骤至少包含:提供暂时基板;提供多个未封装光电元件,连接于该基板之上,并形成多个走道区;提供粘性胶材,填满该走道区并覆盖该未封装光电元件;提供永久基板,通过该粘性胶材接合该多个光电元件;移除该暂时基板;以及形成扩张电极于各该多个未封装光电元件的电极及粘性胶材上。 A manufacturing method of a photoelectric system level, at least comprising the steps of: providing a temporary substrate; providing a plurality of non-encapsulated photovoltaic elements, connected on top of the substrate, and forming a plurality of regions walkway; providing a viscous adhesive material, filling the aisle region and covering the photovoltaic element unpackaged; providing permanent substrate, the plurality of photoelectric elements joined by the adhesive sealant; removing the temporary substrate; and forming an electrode on each of the plurality of expansion unpackaged photovoltaic element electrode and a viscous gum on the timber.
2.如权利要求1所述的系统级光电结构制造方法,还包含提供第一连接层,形成在该暂时基板之上并连接该多个未封装光电元件。 2. The manufacturing method of a photoelectric system level according to claim 1, further comprising providing a first connection layer, formed over the temporary substrate and connected to the plurality of photovoltaic elements unpackaged.
3.如权利要求1所述的系统级光电结构制造方法,其中该多个未封装光电元件为发光二极管,且具有相同或不同的发光波长。 Optical system level structure manufacturing method according to claim 1, wherein the plurality of photovoltaic elements unpackaged light-emitting diode, and having the same or different emission wavelengths.
4.如权利要求3所述的系统级光电结构制造方法,其中该发光二极管至少包含:基板;半导体外延层形成于该基板之上,包含第一导电型半导体层,活性层,以及第二导电型半导体层;以及电极形成于该第一导电型半导体上。 An active layer, and a second conductive semiconductor epitaxial layer is formed over the substrate, comprising a first conductive type semiconductor layer; substrate: The system as claimed in stage manufacturing method of the photoelectric claim 3, wherein the light-emitting diode comprising at least type semiconductor layer; and an electrode formed on the first conductivity type semiconductor.
5.如权利要求4所述的系统级光电结构制造方法,还包含形成多条导线电连接该多个未封装光电元件的电极。 5. The manufacturing method of a photoelectric system level according to claim 4, further comprising a plurality of electrical wires forming the plurality of electrodes is connected to the photovoltaic element unpackaged.
6.如权利要求1所述的系统级光电结构制造方法,其中该多个未封装光电元件连接于该暂时基板后,各别包覆荧光材料。 6. The system of level photoelectric structure manufacturing method according to claim 1, wherein the plurality of non-encapsulated photovoltaic elements connected after the temporary substrate, the respective fluorescent material coating.
7.如权利要求1所述的系统级光电结构制造方法,还包含形成第二连接层于该多个未封装光电元件与该永久基板之间。 7. The system-level photoelectric structure manufacturing method according to claim 1, further comprising a second layer connected to the plurality of non-encapsulated photovoltaic element to the permanent substrate is formed between the.
8.如权利要求7所述的系统级光电结构制造方法,其中该第二连接层包含多个通道。 System level of the manufacturing method of a photoelectric according to claim 7, wherein the second layer comprises a plurality of connecting channels.
9.如权利要求7所述的系统级光电结构制造方法,还包含形成第一反射层于该永久基板与该第二连接层之间。 Optical system level structure fabrication method as claimed in claim 7, further comprising a reflective layer between the first substrate and the second permanent connection layer is formed.
10.如权利要求1所述的系统级光电结构制造方法,其中该永久基板为具有多个微角锥的阵列基板。 10. The manufacturing method of system-level photoelectric claim 1, wherein the permanent substrate is a pyramid having a plurality of micro-array substrate as claimed in claim.
11.如权利要求1所述的系统级光电结构制造方法,其中该暂时基板与该永久基板的材料为硅胶、玻璃、石英、陶瓷、合金或印刷电路板。 11. The photovoltaic system level structure manufacturing method according to claim 1, wherein the temporary substrate material with the permanent substrate is silica gel, glass, quartz, ceramics, alloys or printed circuit board.
12.如权利要求1所述的系统级光电结构制造方法,其中该多个光电元件是利用挑选放置系统放置于该暂时基板之上。 12. The photovoltaic system level structure manufacturing method according to claim 1, wherein the plurality of photovoltaic element is placed by using the selection system is placed on the temporary substrate.
13.如权利要求1所述的系统级光电结构制造方法,其中该粘性胶材的材料为硅胶、硅树脂、弹性聚氨酯、多孔聚氨酯、丙烯酸橡胶、蓝膜或紫外线固化胶。 13. The photovoltaic system level structure manufacturing method according to claim 1, wherein the tacky adhesive material is silicone, silicone, elastomeric polyurethane, porous polyurethane, acrylic rubber, blue or ultraviolet curable adhesive film.
14.如权利要求1所述的系统级光电结构制造方法,其中该粘性胶材以旋转涂布、印刷或铸模灌胶方式形成。 The method of manufacturing a photovoltaic system level structure as claimed in claim 1, wherein the tacky adhesive formed spin coating, molding or potting printing mode.
15.如权利要求1所述的系统级光电结构制造方法,其中该粘性胶材通过热压工艺接合该多个光电兀件及该永久基板。 Optical system level structure fabrication method as claimed in claim 1, wherein the tacky adhesive by hot-pressing process the plurality of photoelectric Wu and said permanent substrate engaging member.
16.如权利要求1所述的系统级光电结构制造方法,其中该暂时基板通过激光剥离、加热分离胶膜图案或溶解胶膜图案工艺移除。 16. The photovoltaic system level structure manufacturing method according to claim 1, wherein the temporary substrate through the laser lift-off, or the heating pattern film separation process for removing dissolved film pattern.
17.如权利要求2所述的系统级光电结构制造方法,其中该第一连接层为热移除胶带、耐热胶带或蓝膜。 The method of manufacturing a photovoltaic system level structure as claimed in claim 2, wherein the first connection layer is a heat removal tape, a heat resistant tape or film is blue.
18.如权利要求5所述的系统级光电结构制造方法,其中该导线的材料为金、铝、合金或多层金属。 Optical system level 18. The manufacturing method according to claim 5, wherein the material wire is gold, aluminum, metal alloy, or a multilayer.
19.如权利要求4所述的系统级光电结构制造方法,其中该发光二极管的电极接触该暂时基板且该发光二极管的基板接触该永久基板。 The method of manufacturing a photovoltaic system level structure as claimed in claim 4, wherein the electrode contacting the light emitting diode and the temporary substrate in contact with the light emitting diode substrate permanent substrate.
20.如权利要求4所述的系统级光电结构制造方法,其中该发光二极管的该第一导电型半导体层、该活性层以及该第二导电型半导体层的材料包含一种或一种以上的物质,选自镓、铝、铟、砷、磷、氮以及硅所构成群组。 20. The manufacturing method of a photoelectric system level 4, wherein the light emitting diode of the first conductivity type semiconductor layer requirements, the material of the active layer and a second conductivity type semiconductor layer comprising one or more of material selected from gallium, aluminum, indium, arsenic, phosphorous, nitrogen, and a group composed of silicon.
21.如权利要求7所述的系统级光电结构制造方法,其中该第二连接层的材料为SiOx或SiNx。 21. The system-method of manufacturing a photovoltaic structure according to claim 7, wherein the material of the second connection layer is SiOx or SiNx.
22.如权利要求8所述的系统级光电结构制造方法,其中该通道的材料为金属或合金。 22. The photovoltaic system level structure manufacturing method according to claim 8, wherein the channel material is a metal or an alloy.
23.如权利要求9所述的系统级光电结构制造方法,其中该第一反射层的材料为银、铝或钼。 23. The photovoltaic system level structure manufacturing method according to claim 9, wherein the material of the first reflective layer is silver, aluminum or molybdenum.
24.如权利要求10所述的系统级光电结构制造方法,其中该具有多个微角锥的阵列基板材料为硅胶、玻璃、石英、陶瓷、合金或印刷电路板。 System level 24. The manufacturing method of a photoelectric claimed in claim 10, wherein the plurality of micro pyramids with the array substrate material is silica gel, glass, quartz, ceramics, alloys or printed circuit board.
25.如权利要求10所述的系统级光电结构制造方法,其中该微角锥为圆锥或多角锥结构。 System level 25. The manufacturing method of a photoelectric claim 10, wherein the micro-conical or polygonal pyramid-cone structure.
26.如权利要求10所述的系统级光电结构制造方法,其中该微角锥的底角角度介于20〜70度之间。 System level 26. The manufacturing method of a photoelectric claimed in claim 10, wherein the angle of the micro-pyramid base angle is between 20~70 degrees.
27.如权利要求10所述的系统级光电结构制造方法,其中该具有多个微角锥的阵列基板的表面披覆第二反射层。 Surface coating system-level photoelectric array substrate 27. The manufacturing method of claim 10, wherein the plurality of micro pyramids having a second reflective layer.
28.如权利要求27所述的系统级光电结构制造方法,其中该第二反射层的材料为银、招或钼。 28. The photovoltaic system level structure manufacturing method according to claim 27, wherein the material of the second reflective layer is silver, molybdenum, or strokes.
29.如权利要求1所述的系统级光电结构制造方法,还包含切割此多个未封装光电元件,形成各别的管芯后,通过该扩张电极,将之接合至次载体之上。 29. The photovoltaic system level structure manufacturing method according to claim 1, further comprising a plurality of cutting the non-packaged this photovoltaic element, forming respective die through which the expandable electrode, joining on to the secondary carrier.
30.如权利要求29所述的系统级光电结构制造方法,其中该次载体是导线架或大尺寸键嵌基底。 Optical system-level structure 29 according to the manufacturing method as claimed in claim 30., wherein the carrier is a secondary or large-sized lead frame substrate embedded key.
31. 一种系统级光电结构,至少包含:永久基板;以及多个未封装光电元件,形成于该永久基板之上,并在其间隔区域形成至少一走道区,并以粘性胶材填满该走道区,其中扩张电极形成于各该多个未封装光电元件的电极及粘性胶材上。 31. A photovoltaic system level architecture, comprising at least: a permanent substrate; and a plurality of non-encapsulated photovoltaic element, formed on the permanent substrate, and forming at least one region thereof walkway space area, and a viscous adhesive material fills the aisle region, wherein the expandable electrode is formed on each of the plurality of non-encapsulated photovoltaic element electrode and a viscous adhesive material.
32.如权利要求31所述的系统级光电结构,还包含以多条导线电连接该多个未封装光电元件。 32. The photovoltaic system level structure according to claim 31, further comprising a plurality of electrical wires connected to the plurality of photovoltaic elements unpackaged.
33.如权利要求31所述的系统级光电结构,还包含连接层,形成在该永久基板与该多个未封装光电元件之间。 33. The photovoltaic system level configuration of claim 31, further comprising a connection layer formed between the substrate and the plurality of permanent unpackaged photovoltaic element.
34.如权利要求33所述的系统级光电结构,其中该连接层包含多个通道。 System level 34. Optical structure according to claim 33, wherein the connecting layer comprises a plurality of channels.
35.如权利要求33所述的系统级光电结构,还包含第一反射层,形成在该永久基板与该连接层之间。 System level 35. Optical structure according to claim 33, further comprising a first reflective layer, is formed between the permanent substrate and the connection layer.
36.如权利要求33所述的系统级光电结构,其中该永久基板为具微角锥的阵列基板。 Optical system level structure of claim 33 wherein the permanent substrate is a substrate having an array of micro-pyramids as claimed in claim 36,.
37.如权利要求36所述的系统级光电结构,其中该微角锥阵列基板具有多个微角锥。 System level 37. Optical structure according to claim 36, wherein the micro-array substrate having a plurality of cube-corner micro pyramids.
38.如权利要求31所述的系统级光电结构,其中该多个未封装光电兀件为发光二极管,且具有相同或不同的发光波长。 38. The photovoltaic system level structure according to claim 31, wherein the plurality of photoelectric Wu unpackaged light-emitting diode element, and having the same or different emission wavelengths.
39.如权利要求38所述的系统级光电结构,其中该发光二极管至少包含:基板;半导体外延层,形成于该基板之上,包含第一导电型半导体层,活性层,以及第二导电型半导体层;以及电极,形成于该第一导电型半导体上。 An active layer, a second conductivity type and the semiconductor epitaxial layer, formed on the substrate, comprising a first conductive type semiconductor layer; substrate: 39. The system as claimed in stage photovoltaic structure according to claim 38, wherein the light-emitting diode comprising at least the semiconductor layer; and an electrode formed on the first conductivity type semiconductor.
40.如权利要求39所述的系统级光电结构,还包括以突光材料包覆该多个发光二极管。 System level 40. The photovoltaic structure according to claim 39, further comprising a light projecting material covering the plurality of light emitting diodes.
41.如权利要求40所述的系统级光电结构,其中包覆该多个发光二极管的荧光材料为相同或不同材料。 41. The photovoltaic system level structure according to claim 40, wherein the plurality of phosphor coated light-emitting diodes are the same or different material.
42.如权利要求39所述的系统级光电结构,其中该发光二极管的基板直接接触该永久基板。 System level 42. The photovoltaic structure according to claim 39, wherein the light emitting diode substrate in direct contact with the permanent substrate.
43.如权利要求31所述的系统级光电结构,其中该永久基板的材料为硅胶、玻璃、石英、陶瓷、合金或印刷电路板。 43. The photovoltaic system level structure according to claim 31, wherein the permanent substrate material is silica gel, glass, quartz, ceramics, alloys or printed circuit board.
44.如权利要求31所述的系统级光电结构,其中该粘性胶材的材料为硅胶、硅树脂、弹性聚氨酯、多孔聚氨酯、丙烯酸橡胶、蓝膜或紫外线固化胶。 44. The photovoltaic system level structure according to claim 31, wherein the viscous material is silicone sealant, silicone, elastomeric polyurethane, porous polyurethane, acrylic rubber, blue or ultraviolet curable adhesive film.
45.如权利要求31所述的系统级光电结构,其中该导线的材料为金、铝、合金或多层金属。 System level 45. The photovoltaic structure according to claim 31, wherein the material wire is gold, aluminum, metal alloy, or a multilayer.
46.如权利要求39所述的系统级光电结构,其中该发光二极管的该第一导电型半导体层、该活性层及该第二导电型半导体层的材料包含一种或一种以上的物质,选自镓、铝、铟、砷、磷、氮以及硅所构成群组。 46. ​​A structure as claimed in claim photovoltaic system level wherein the light emitting diode 39 of the first conductivity type semiconductor layer requirements, the material of the active layer and the second conductivity type semiconductor layer comprising one or more substances, selected from gallium, aluminum, indium, arsenic, phosphorous, nitrogen, and a group composed of silicon.
47.如权利要求33所述的系统级光电结构,其中该连接层的材料为SiOx或SiNx。 47. The photovoltaic system level structure according to claim 33, wherein the material of the connection layer is a SiOx or SiNx.
48.如权利要求34所述的系统级光电结构,其中该通道的材料为金属或合金。 48. The photovoltaic system level structure according to claim 34, wherein the channel material is a metal or an alloy.
49.如权利要求35所述的系统级光电结构,其中该第一反射层的材料为银、铝或钼。 49. The photovoltaic system level structure according to claim 35, wherein the material of the first reflective layer is silver, aluminum or molybdenum.
50.如权利要求36所述的系统级光电结构,其中该具微角锥的阵列基板的材料为硅胶、玻璃、石英、陶瓷、合金或印刷电路板。 50. The photovoltaic system level structure according to claim 36, wherein the substrate material having an array of micro pyramid silica gel, glass, quartz, ceramics, alloys or printed circuit board.
51.如权利要求37所述的系统级光电结构,其中该微角锥为圆锥或多角锥结构。 51. The photovoltaic system level structure according to claim 37, wherein the micro-conical or polygonal pyramid-cone structure.
52.如权利要求37所述的系统级光电结构,其中该微角锥的底角角度介于20〜70度之间。 52. The photovoltaic system level structure according to claim 37, wherein the angle of the micro-pyramid base angle is between 20~70 degrees.
53.如权利要求36所述的系统级光电结构,其中该微角锥阵列基板的表面披覆第二反射层。 53. The system as claimed in claim 36 level photoelectric surface coating structure wherein the micro-pyramid array substrate second reflective layer requirements.
54.如权利要求53所述的系统级光电结构,其中该第二反射层的材料为银、铝或钼。 54. The photovoltaic system level structure according to claim 53, wherein the material of the second reflective layer is silver, aluminum or molybdenum.
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