CN101996892B - System level photoelectric structure and manufacturing method thereof - Google Patents
System level photoelectric structure and manufacturing method thereof Download PDFInfo
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- CN101996892B CN101996892B CN2010100021851A CN201010002185A CN101996892B CN 101996892 B CN101996892 B CN 101996892B CN 2010100021851 A CN2010100021851 A CN 2010100021851A CN 201010002185 A CN201010002185 A CN 201010002185A CN 101996892 B CN101996892 B CN 101996892B
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
The invention provides a system level photoelectric structure and a manufacturing method thereof. The manufacturing method at least comprises the following steps of: providing a temporary substrate; providing a plurality of unencapsulated photoelectric elements, connecting the photoelectric elements to the substrate so as to form a plurality of aisle areas; providing a viscous glue material, and filling the aisle areas and covering the unencapsulated photoelectric elements by using the viscous glue material; providing a permanent substrate, and jointing a plurality of unencapsulated photoelectric elements with the permanent substrate through the viscous glue material; and removing the temporary substrate.
Description
Technical field
The present invention relates to a kind of electro-optical system, especially relate to a kind of luminescent system with conformability.
Background technology
The encapsulating structure of photoelectric cell such as light-emitting diode mainly originates from complicated single-chip package flow process.The photoelectric cell of encapsulation again in conjunction with other electronic components, such as electric capacity, inductance etc., and/or non-electronic element, can not form electro-optical system after encapsulation.
Yet under electric consumers miniaturization and lightening development trend, the exploitation of photoelectric cell is also towards less package dimension.Wherein, wafer-level package (Chip-Level Package; CLP) be one of the expectation mode of semiconductor and photoelectric cell package design.
Summary of the invention
According to the embodiment of the invention, system level photoelectric structure and preparation method thereof is provided, its manufacture method step comprises at least: temporary substrate is provided; A plurality of not packaged photoelectronic elements are provided, are connected on the substrate, and form a plurality of aisle district; Viscosity glue material is provided, fills up the aisle district and cover photoelectric cell; Provide permanent substrate, by a plurality of photoelectric cells of viscosity glue material bonding; And remove temporary substrate.
Description of drawings
Fig. 1 shows package structure for LED;
Fig. 2 A to Fig. 2 D shows the manufacture method according to the electro-optical system of the embodiment of the invention;
Fig. 3 shows the schematic diagram according to the electro-optical system of the embodiment of the invention;
Fig. 4 shows according to the system unit of the embodiment of the invention and the schematic diagram of carrier;
Fig. 5 shows according to the system unit of the embodiment of the invention and the schematic diagram of Submount;
Fig. 6 (a) is to the electrical connection schematic diagram of Fig. 6 (c) demonstration according to system unit in the electro-optical system of the embodiment of the invention;
Fig. 7 (a) is to the electrical connection schematic diagram of Fig. 7 (c) demonstration according to system unit in the electro-optical system of another embodiment of the present invention;
Fig. 8 (a) is to the electrical connection schematic diagram of Fig. 8 (c) demonstration according to system unit in the electro-optical system of further embodiment of this invention;
Fig. 9 A to Fig. 9 D shows the manufacture method according to the electro-optical system of another embodiment of the present invention;
Figure 10 (a) is to the electrical connection schematic diagram of Figure 10 (c) demonstration according to system unit in the electro-optical system of the embodiment of the invention;
Figure 11 shows the schematic diagram according to subgroup in the electro-optical system of the embodiment of the invention;
Figure 12 (a) is to the electric connection framework of Figure 12 (d) demonstration according to the subgroup of the embodiment of the invention;
Figure 13 shows the electric connection framework according to the subgroup of another embodiment of the present invention;
Figure 14 (a) is to the dimensional drawing of Figure 14 (b) demonstration according to the triangular web unit of the embodiment of the invention;
Figure 15 (a) is to the configuration mode of Figure 15 (d) demonstration according to the electro-optical system medium wavelength transition material of the embodiment of the invention;
Figure 16 (a) is to the configuration mode of Figure 16 (d) demonstration according to the electro-optical system medium wavelength transition material of another embodiment of the present invention;
Figure 17 (a) is to the configuration mode of Figure 17 (b) demonstration according to the electro-optical system medium wavelength transition material of further embodiment of this invention;
Figure 18 (a) is to the configuration mode of Figure 18 (c) demonstration according to the electro-optical system medium wavelength transition material of the embodiment of the invention;
Figure 19 (a) is to the configuration mode of Figure 19 (d) demonstration according to the electro-optical system medium wavelength transition material of another embodiment of the present invention;
Figure 20 (a) is to the configuration mode of Figure 20 (d) demonstration according to the electro-optical system medium wavelength transition material of further embodiment of this invention;
Figure 21 (a) is to the configuration schematic diagram of Figure 21 (b) demonstration according to system unit in the electro-optical system of the embodiment of the invention;
Figure 22 (a) shows according to the electro-optical system of the embodiment of the invention or the configuration schematic diagram of subgroup to Figure 22 (f);
Figure 23 A to Figure 23 E is manufacturing process structural representation of the present invention;
Figure 24 A to Figure 24 G is manufacturing process structural representation of the present invention;
Figure 25 A and Figure 25 B are the manufacturing process structural representation of the embodiment of the invention;
Figure 26 is the manufacturing process structural representation of the embodiment of the invention; And
Figure 27 is the manufacturing process structural representation of the embodiment of the invention.
Description of reference numerals
10: carrier, temporary substrate 60: be electrically connected
10a: outer body 60a: wire
10b: outer body 60b: the inner connection
20: layer, structure, the first articulamentum 60b ': isolated area
30: system unit, photoelectric cell 60c: circuit carrier
301: electrode 601: scolder
302: 70: the second articulamentums of semiconductor epitaxial layers
303: substrate the 70 ': the second articulamentum
304: aisle district 701: passage
305: 80: the first reflector of expansion electrode
40: material, viscosity glue material 100: electro-optical system
50: Submount, permanent substrate 100a: subgroup
50 ': substrate 100b: subgroup
50a: knitting layer 100c: subgroup
501: little pyramid 200: package structure for LED
Embodiment
As illustrated in Fig. 2 A～Fig. 2 D, be summarized as follows according to the manufacture method of the electro-optical system 100 of embodiments of the invention: two or a plurality of system unit 30 tentatively be disposed on the carrier 10; Utilize material 40 to keep the spatial relationship of 30 of each system units; System unit 30 and carrier 10 are separated; And the electric connection 60 of setting up on demand 30 of system units.Only execution sequence or the selection of above steps are not limited to this, and the user works as can be according to Practical manufacturing environment or condition arrangement.
In detail, the electro-optical system 100 according to embodiments of the invention comprises that two or more system unit 30 is to form transmission, the switching network (network) of luminous energy and electric energy.System unit 30 is arranged in network, and at least one of light or motor is provided.For example, electro-optical system 100 can receive signal, electric energy with output light, or receives light with output electric energy, signal.On using, electro-optical system 100 can be used for illumination, image display, image identification, image recasting, electric power output, data storing, machining etc.
Particularly, electro-optical system 100 be light-emitting diode (LED), photodiode (photodiode), photo resistance (photoresister), laser (laser), infrared emitter (infrared emitter), and the system unit 30 of the tool photoelectricity function such as solar cell (solar cell) at least integrated (integration), the combination, stacking of one.In addition, electro-optical system 100 is still optionally held the system unit 30 of the non-photoelectricity functions such as resistance, electric capacity, inductance, diode, integrated circuit.
In an embodiment of the present invention, the complete or primary structure of one or two above system units 30 is finished on carrier 10.Particularly, carrier 10 is as the basis of formation of this system unit 30.For example, one or two above system units 30 by chemical deposition, physical deposition, plating, synthesize, the method such as self assembly (self-assembly) is formed on the carrier 10.In addition, except above-mentioned manufacture method, cutting, grinding, polishing, photoetching, etching, heat treatment etc. also optionally are applied among the completion system unit 30.
Particularly, the system unit 30 minimum electrically layers of the first electrical layer, converter section and second that comprise.First electrically layer and second electrically layer be each other at least two parts electrically, polarity or alloy is different or respectively in order to semi-conducting material single or multiple lift that electronics and hole are provided (" multilayer " refer to two-layer or two-layer more than, as follows.), its electrical selection can for p-type, N-shaped, and the i type at least arbitrarily both combinations.Switch site is in the first electrical layer and second electrically between the layer, the zone that may change or be induced to change for electric energy and luminous energy.Electric energy changes or brings out the light able one for example is light-emitting diode, liquid crystal display, Organic Light Emitting Diode; Luminous energy changes or brings out electric able one for example is solar cell, photodiode.
In embodiments of the present invention, one or two above system units 30 were finished before being fixed on the carrier 10, that is carrier 10 and system unit 30 originally are separation independent of one another before setting up association.Particularly, carrier 10 is as the support of this system unit 30.For example, one or two above system units 30 are fixed on the carrier 10 by connection means such as glue, metal, pressure, heat.Pertinent literature can be referring to this case applicant's Taiwan patent No. 311287, No. 456058, No. 474034, and No. 493286, and it also is cited as the part of this case.In addition, in the process of setting up connection, can adopt machinery or manual type system unit 30 is positioned on the carrier 10.
As shown in Figure 3, finish or half-done electro-optical system 100 can optionally further be joined with outer body.This outer body can be connected to the arbitrary one-sided or both sides of electro-optical system 100.In several embodiment, electro-optical system 100 is joined with the outside and the outer body 10a with electric connection 60; Electro-optical system 100 is to join with respect to the outside and the outer body 10b that are electrically connected 60; Perhaps electro-optical system 100 is electrically connected 60 the outside and opposite side thereof the two and outer body 10a, 10b and joins to have.Only electro-optical system 100 with joining of outer body be not limited to above aspect, arbitrary outer surface of electro-optical system 100 all can be integrated mutually with suitable outer body.Particularly, outer body is the combination in any of unit, member, device, system, structure, composition or above-mentioned selection.For example, outer body is substrate, and that its material can be selected is integrated such as aforementioned carrier, circuit, electro-optical system, active element, passive component, circuit element is integrated or tool etc.
In an embodiment of the present invention, 10 of system unit 30 and carriers still are formed with one deck or structure 20, as shown in Figure 4.This layer or structure 20 expections can reach the usefulness of short-term or long-term coupling part or whole system unit 30 and carrier 10.At this, " short-term " refer to the time early than or just in the manufacturing of electro-optical system 100, send to or time point that deblocking is finished; " for a long time " time of referring to be later than electro-optical system 100 manufacturing, send to or time point that deblocking is finished, in other words, 10 of system unit 30 and carriers be not to be separated as necessity.Particularly, this layer or structure 20 for example are the combination in any of colloid, adhesive tape, metal single layer, Metal coating, alloy, semiconductor, anchor clamps or above-mentioned selection.In addition, layer or structure 20 are more optionally included reflection, antireflection, electric current resistance barrier, diffusion barrier, stress relax slow, heat conduction, the function such as heat insulation in except having linkage function.For example, comprise reflecting surface, be positioned at the upper intermediary layer between system unit 30 and reflecting surface and be positioned at reflecting surface in layer or the structure 20 and the lower intermediary layer of 10 of carriers.Upper intermediary layer and lower intermediary layer can have above-mentioned other functions except reflection function at the same time or separately, the concrete as functions such as connection, diffusion barrier.
In another embodiment of the present invention, system unit 30 and material 40 more can engage with Submount 50, as shown in Figure 5.This joint may be implemented among Fig. 2 A-Fig. 2 D before or after arbitrary step.Preferably, this joint is implemented on after the material 40 importing manufacturing process, after the step such as Fig. 2 B, Fig. 2 C or Fig. 2 D.If inferior carrier 50 namely engages with system unit 30 and material 40, then can provide a comparatively reliably intermediate structure for subsequent technique after the step of Fig. 2 B.Submount 50 can with reference to the explanation of earlier figures 4, also can be pressurization means, heater means or its combination with the juncture of system unit 30.Particularly, knitting layer 50a is formed between time carrier 50 and the system unit 30 to reach and engages its two purpose.
In addition; knitting layer 50a is except having linkage function; more optionally include reflection, antireflection, electric current resistance barrier, diffusion barrier, stress relax slow, heat conduction, the function such as heat insulation in; yet; these functions reach not take by add ons as necessary, can also utilize the means such as the composition of adjusting Submount 50 itself, geometry, processing mode to reach.For example, at least one exiting surface at Submount 50 forms reflection, refraction, scattering, optically focused, collimation, masking structure.The face that this exiting surface for example is the face that joins with system unit 30, join with material 40, the face that joins with surrounding medium.Particularly, reflection, refraction, scattering, optically focused, masking structure for example are one at least in the minute surface, regular male and fomale(M﹠F), irregular male and fomale(M﹠F), high index of refraction difference interface, photonic crystal, concavees lens, convex lens, Fresnel lens (Fresnel lens), light tight.
Fig. 6 illustration is according to the electrical connection aspect of at least two system units 30 in the electro-optical system 100 of the embodiment of the invention.At this, system unit 30 has two towards equidirectional electrode 301, and the concrete system unit 30 of this structure for example is light-emitting diode, more specifically, for being formed at insulator, sapphire for example, on light-emitting diode.Among the figure (a), 30 of two system units connect both positive and negative polarity by wire 60a and form electrical series connection; Among the figure (b), 30 of two system units connect anodal formation by wire 60a and are electrically connected; Among the figure (c), 30 of two system units connect negative pole by wire 60a and form electric connection.
Fig. 7 illustration is according to the electrical connection aspect of at least two system units 30 in the electro-optical system 100 of another embodiment of the present invention.Concrete execution mode can be with reference to the explanation of figure 6.Only in the present embodiment, the electrical connection that system unit is 30 is reached by form the inner 60b of connection on system unit 30.A kind of generation type of the inner 60b of connection is to form the rear deposit metallic material of isolated area 60b ' on the setting regions of system unit 30.
Fig. 8 illustration is according to the electrical connection aspect of at least two system units 30 in the electro-optical system 100 of further embodiment of this invention.Among figure (a) and the figure (b), the electrode of system unit 30 301 is adjusted or is continued to roughly the same position, as close to or just in the position on material 40 surfaces.Among Fig. 8 (a), 30 of two system units pass through to be electrically connected 60, and for example: wire 60a or the inner 60b that connects connect both positive and negative polarity and form electrical series connection; Among the figure (b), 30 of two system units pass through to be electrically connected 60, and for example: wire 60a or the inner 60b that connects, connecting electrode 301 forms schemes one of electric connection shown in left three kinds of equivalent circuit diagrams.Among the figure (c), two system units 30 are connected to circuit carrier 60c and become the part of electric network.
As illustrated in Fig. 9 A～Fig. 9 D, be summarized as follows according to the manufacture method of the electro-optical system 100 of another embodiment of the present invention: two or more system unit 30 tentatively is disposed on the carrier 10 and forms and is electrically connected 60 in a side; Utilize material 40 to keep the spatial relationship of 30 of each system units; System unit 30 and carrier 10 are separated; And form at the opposite side of system unit 30 and to be electrically connected 60.Only execution sequence or the selection of above steps are not limited to this, and the user works as can be according to Practical manufacturing environment or condition arrangement.In addition, electric connection 60 quantity of two system units, 30 both sides or position are only for illustration but not in order to limiting embodiments of the present invention among Fig. 9 D, and the user is when can be according to characteristic arrangement, the adjustment of circuit.In addition, under aobvious mutually conflict, the explanation of aforementioned all embodiment can be the reference of the present embodiment institute or uses.
Figure 10 illustration is according to the electrical connection aspect of at least two system units 30 in the electro-optical system 100 of the embodiment of the invention.Among the figure (a), two system units 30 configures in the same way, and connect respectively anodal and negative pole forms parallel connection by being electrically connected 60, and the system unit 30 of thought reverse configuration also can form parallel connection by being electrically connected 60 suitable layout; Among the figure (b), two system units, 30 reverse configuration, and by being electrically connected 60 connection both positive and negative polarities formation reverse parallel connections, only the system unit 30 of configuration also can be by the suitable layout formation reverse parallel connection of electric connection 60 in the same way.Among the figure (c), two system units 30 are connected to circuit carrier 60c and become the part of electric network.
In embodiments of the present invention, system unit 30 groups that are restricted in the material 40 can further be divided into the subgroup that quantity equates or do not wait, as shown in figure 11, only number and the connected mode of system unit 30 only is illustration among the figure, non-in order to limit embodiments of the present invention, the system unit kenel that discloses among other embodiment in the application's case all can be the present embodiment and adopts under not aobvious mutually conflict.In addition, the electric connection mode of 30 of each system units can be with reference to other relevant embodiment of the present invention in the subgroup.Divide the means of subgroup and can select chemical formula, physical type or its Combination application.The chemical formula means are such as being etching etc.The physical type means such as be that machine cuts, grinding, laser cutting, water are cut, hot splitting, ultrasonic vibrations etc.The width of 30 materials 40 in adjacent system unit is preferably more than the machining tolerance of division means.
According to the electric connection framework of the subgroup of the embodiment of the invention as shown in figure 12, only the kenel of system unit only is illustration in the accompanying drawing, non-in order to limit embodiments of the present invention, the system unit kenel that discloses among other embodiment in the application's case all can be the present embodiment and adopts under not conflicting mutually.Among the figure (a), be electrically connected 60b and stride across on the electrode 301 and material 40 that isolated area 60b ' is set up in system unit 30.Among the figure (b), an end that is electrically connected 60b is electrically connected to the electrode 301 of system unit 30, and the other end directly is set up on the material 40.Among the figure (c), be electrically connected 60b and namely be electrically connected with system unit 30 without electrode 301, and directly be set up on the material 40.Among the figure (d), be electrically connected 60b and namely be electrically connected with system unit 30 without electrode 301, and be set up on the material 40 after striding across isolated area 60b '.
As shown in figure 13, in embodiments of the present invention, electro-optical system 100 comprises two or more subgroup of assembling in the various dimensions mode.The quantity of system unit and connected mode respectively can be identical or different in each subgroup.For example, subgroup 100a and 100c and subgroup 100b stacked on top wherein, comprise four systems unit 30 among the subgroup 100a; Comprise a system unit 30 among the subgroup 100b; Comprise two system units 30 among the subgroup 100c.Can use scolder, elargol or other applicable electric conducting materials to reach between subgroup is electrical connected.Yet non-to form electric connection as necessary between subgroup, simple structural assembled relation also can be found in therebetween.Only kenel or the quantity of system unit 30 only be illustration in the accompanying drawing, and is non-in order to limit embodiments of the present invention, and the system unit kenel that discloses among other embodiment in the application's case and connected mode all can be the present embodiment under conflicting mutually and adopt not showing.
Figure 14 (a) shows that subgroup reaches wherein triangular web unit 30 same width L2, L1 on one side.L1/L2 is defined as X, and 0.05≤X≤1, preferably, and 0.1≤X≤0.2,0.2≤X≤0.3,0.3≤X≤0.4,0.4≤X≤0.5,0.5≤X≤0.6,0.6≤X≤0.7,0.8≤X≤0.9 and/or 0.9≤X≤1.Particularly, L1/L2=260/600,580/1000.Figure 14 (b) shows that its profile presents trapezoidal according to the profile of the subgroup of the embodiment of the invention.The relation of trapezoidal each size is as follows: L2＞L1, L2＞L3.One or more system unit 30 position in subgroup as shown in the figure, precisely because can move arbitrarily with respect to the position on material 40 borders, that is at least one border of system unit 30 can touch or surpass the border of material 40 just.For example, system unit 30 can approach, contact or upper limb 40a and/or the lower edge 40b of outstanding material 40.
As shown in figure 15, in embodiments of the present invention, luminescent system, subgroup or system unit (being referred to as in the present embodiment light source) can be integrated mutually with material for transformation of wave length.Particularly, material for transformation of wave length can be made of independent material 40a, independent material 40b or the combination of material 40a and 40b.Particularly, material 40a is fluorescent powder, dyestuff, semi-conducting material or ceramic powder etc.; Material 40b is fluorescence block, sintering block, ceramic block, organic colloid or inorganic colloid etc.Material 40a can be in aforementioned light source technique or the two is integrated mutually with material 40, material 40b or its afterwards.For example, fluorescent powder can cover or be filled on the system unit 30 first with after material 40 mixes, and perhaps material for transformation of wave length can utilize the modes such as applying, some glue, screen painting, deposition to be formed on the system unit 30.Among the figure (a), material 40a, material 40b or material 40a and 40b are disposed on the light direction of light source, preferably, are covered on the light source.Among the figure (b), material 40a mixes in material 40.Among the figure (c), the configuration mode of material 40a and 40b is aforementioned (a) and (b) combination of aspect.Among the figure (d), material 40a, material 40b or material 40a and 40b are disposed on the light direction of light source, but are not in direct contact with it, and preferably, join with material 40.
As shown in figure 16, luminescent system, subgroup or system unit (being referred to as in the present embodiment light source) send blue light, on it and the configuration material for transformation of wave length.The related embodiment of material for transformation of wave length can be with reference to the explanation of aforementioned Figure 15.Among the figure (a), but material for transformation of wave length transmitting green light or sodium yellow.Among the figure (b), material for transformation of wave length can be launched red light and sodium yellow.Among the figure (c), the material for transformation of wave length in zone emission sodium yellow, another regional material for transformation of wave length emission red light, and this two zone non-overlapping each other.Preferably, the sodium yellow zone is greater than region of red light.Among the figure (d), the material for transformation of wave length in zone emission sodium yellow, another regional material for transformation of wave length emission red light, and this two zone overlaid each other.Preferably, the sodium yellow zone than region of red light near light source.Particularly, in above-mentioned each aspect, each coloured light is produced after blue light excites by corresponding fluorescent powder or fluorescence block.
Shown in Figure 17 (a), part in luminescent system or the subgroup or several system units emission blue light, another part or several system unit emission red light, mix in the material 40 green or yellow fluorescence powder are arranged, preferably, the quantity of blue light system unit is less than the quantity of red light system unit, and for example, the blue light system unit is at least N/1+N (N belongs to any positive integer) with the quantity ratio of red light system unit.Perhaps, the power ratio of blue light system unit and red light system unit is N1/N2 (N1 and N2 belong to any positive integer).Preferably, the power of blue light system unit is greater than the power of red light system unit, for example, and N1/N2=3.0/1.0,2.5/1.0,2.0/1.0,1.5/1.0 or 1.1/1.0.Shown in Figure 17 (b), system unit 30 emission blue lights in luminescent system, the subgroup, and mix in the material 40 redness and yellow fluorescence powder are arranged, preferably, redness and yellow fluorescence powder are disposed in the certain space in the material 40 equably, so non-homogeneous, gradually layer, discrete or alternating expression distribute and can also selectivity adopt.
Shown in Figure 18 (a), a part of system unit emission blue light in luminescent system or the subgroup, the system unit emission red light of another part mixes the yellow fluorescence powder with identical or different emission spectrum among material 40 and the 40b.Shown in Figure 18 (b), the system unit emission blue light of the effective or start in luminescent system or the subgroup mixes redness and yellow fluorescence powder that proper proportion is arranged among material 40 and the 40b.Shown in Figure 18 (c), the effective or actuating system unit emission blue light in luminescent system or the subgroup, mixing in the material 40 has the yellow fluorescence powder, and mixing among the material 40b has the red fluorescence powder.
Shown in Figure 19 (a), a part of system unit emission blue light in luminescent system or the subgroup, the system unit transmitting green light of a part, the system unit emission red light of a part.Shown in Figure 19 (b), a part of system unit emission blue light in luminescent system or the subgroup, the system unit emission red light of another part, material 40b is disposed on this two parts system unit, and mixes the green fluorescence powder is arranged.Shown in Figure 19 (c), a part of system unit emission blue light in luminescent system or the subgroup, the system unit emission red light of another part, material 40b is disposed on the blue light system unit, and mixes the green fluorescence powder is arranged.Shown in Figure 19 (d), a part of system unit emission blue light in luminescent system or the subgroup, the system unit emission red light of another part, material 40b is disposed on part or the local blue light system unit, and mixes the green fluorescence powder is arranged.
Shown in Figure 20 (a)～20 (c), the effective or actuating system unit emission blue light in luminescent system or the subgroup.Among the figure (a), the material 40b in a zone mixes the green fluorescence powder, and another regional material 40b mixes the red fluorescence powder, and preferably, the green emitting phosphor body region is greater than the red fluorescence powder body region.Among the figure (b), the material 40b in a zone mixes the green fluorescence powder, and another regional material 40b mixes the red fluorescence powder, and this two zone overlaps each other, and preferably, short-wave long light-emitting zone longer wavelength light-emitting zone is near system unit.Among the figure (c), material 40b mixes redness and yellow fluorescence powder.Shown in Figure 20 (d), in luminescent system or the subgroup effectively or actuating system unit emission human eye can't perception ray, for example: ultraviolet ray.Comprise blueness, green, and the material 40b of red fluorescence powder be disposed on the system unit respectively.The size of this three part can be according to efficient, fade characteristics, the thickness adjustment of corresponding fluorescent powder.
In above or follow-up all embodiment, in the application, the sodium yellow of the ratio that the blue light collocation is suitable can produce cold white light; Sodium yellow and the red light of the ratio that the blue light collocation is suitable can produce warm white.Blue light and ruddiness power ratio be about 2: 1～and 5: 1, for example: 2.5: 1,3: 1,3.5: 1,4: 1,4.5: 1.The power ratio of green glow and gold-tinted is about 1: 4.Only size and the configuring area of material 40 and 40b only are illustration in the accompanying drawing, and non-is unique execution mode of the present invention, and the user works as can be according to situation adjustment, exchange.In addition, do not have fluorescent powder be disposed at its go out system unit on the light path can also be optionally the two is covered by material 40, material 40b or its.Material 40 and/or material 40b and fluorescent powder collocation mode can also be replaced by fluorescence block, sintering block, ceramic block, dyestuff or its combination.
But electro-optical system or subgroup are except the system unit 30 that comprises emission of light, more can comprise one or more integrated circuit (IC), in order to controlling all or part of system unit 30, or as the circuit relay of all or part of system unit 30, shown in Figure 21 (a).Except integrated circuit, electro-optical system or subgroup more can connected system unit 30 '.In an embodiment, system unit 30 ' is electric power system, for example, and chemical cell, solar cell, fuel cell etc.In an embodiment, system unit 30 ' is transformation system, frequency conversion system, commutation system.Particularly, system unit 30 ' is switched power supply (Switched Mode Power Supply; SWMP), high frequency transformer.
The schematic diagram of several configuration kenels of Figure 22 (a)～Figure 22 (f) display light electric system or subgroup, wherein, system unit 30 is non-to be limited to be all light-emitting component, one or two above system units 30 can be the unit of non-tool lighting function, such as person described in aforementioned or follow-up all embodiment.
Shown in Figure 23 A, in the manufacture method of the electro-optical system of foundation specific embodiments of the invention, carrier 10 (also being called in the present embodiment temporary substrate) at first is provided, on temporary substrate 10, form layer or the structure 20 (also being called in the present embodiment the first articulamentum) of upper and lower surface tool stickiness in modes such as rotary coating, evaporation or printings, and can be by selecting place system (Pick﹠amp; Place system) a plurality of not system units 30 (also being called in the present embodiment photoelectric cell) of encapsulation is placed and are connected on above-mentioned the first articulamentum 20, and form a plurality of aisle district 304 at the interval region of a plurality of photoelectric cells 30, contraposition precision when wherein photoelectric cell 30 is placed mainly determines by selecting place system, for example, error is no more than 15 μ m.Wherein above-mentioned photoelectric cell 30 can be light-emitting diode, and its structure can comprise substrate 303, be formed on semiconductor epitaxial layers 302 and at least one electrode 301 on the substrate.Above-mentioned semiconductor epitaxial layers 302 can comprise the first conductive-type semiconductor layer, active layer, and the second conductive-type semiconductor layer.In addition, substrate 303 can optionally remove in manufacturing process, with the reduction system size.In a preferred embodiment, at least one electrode 301 of this photoelectric cell 30 contacts with above-mentioned the first articulamentum 20.Above-mentioned a plurality of photoelectric cell 30 can send the light with identical or different wavelength, and its light emitting region can be from ultraviolet light to infrared ray.
The material of above-mentioned temporary substrate 10 can be selected from silica gel (silicone), glass, quartz, pottery, alloy or printed circuit board (PCB) (PCB); The material of above-mentioned the first articulamentum 20 can be selected from adhesive tape, for example removes adhesive tape (UV release tape) for heat removes adhesive tape (thermal release tape), ultraviolet ray, chemistry removes adhesive tape (Chemical release tape), heat resistant adhesive tape or blue film; The material of the substrate 303 of above-mentioned photoelectric cell 30 can be selected from the high thermal conductive substrates such as sapphire (Sapphire), carborundum (SiC), zinc oxide (ZnO), gallium nitride (GaN) or silicon, glass, quartz or pottery; The material of the first conductive-type semiconductor layer of above-mentioned photoelectric cell 30, active layer and the second conductive-type semiconductor layer comprises one or more material, is selected from gallium (Ga), aluminium (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N) and silicon (Si) and consists of group.
Then, shown in Figure 23 B, provide material 40 (being specially in the present embodiment viscosity glue material) to fill up the aisle district 304 of above-mentioned a plurality of photoelectric cell 30, and the first articulamentum 20 surfaces that cover above-mentioned a plurality of photoelectric cell 30 and do not covered by photoelectric cell.Wherein above-mentioned viscosity glue material 40 can utilize the modes such as rotary coating, printing or mold encapsulating to form, and viscosity glue material 40 also can be elastomeric material, its material can be selected from silica gel (silicone rubber), silicones (silicone resin), silica gel, elastic polyurethane (elasticity PU), cellular polyurethane (porous PU), acrylic rubber (acrylic rubber) or die separation glue, such as blue film or ultraviolet curing glue (UV glue).In the present embodiment, also can carry out glossing (polish process), make the flattening surface of above-mentioned a plurality of photoelectric cell 30, and allow above-mentioned photoelectric cell 30 surfaces can not produce the viscosity glue material 40 of surplus (overflow) or depression.
Subsequently, shown in Figure 23 C, provide Submount 50 (also being called in the present embodiment permanent substrate), and it a plurality of photoelectric cell 30 with coating viscosity glue material 40 is engaged, this juncture can be heat pressing process.In a preferred embodiment, this permanent substrate 50 directly contacts with the substrate 303 of above-mentioned photoelectric cell 30.The material of above-mentioned permanent substrate 50 can be silica gel (silicone), glass, quartz, pottery, alloy or printed circuit board (PCB) (PCB).
Then, shown in Figure 23 D, can laser lift-off, the modes such as heating separation gel film figure, dissolving glued membrane pattern remove electrode 301 and the part semiconductor epitaxial loayer 302 that exposes a plurality of photoelectric cells 30 behind above-mentioned temporary substrate 10, the first articulamentum 20 and the part viscosity glue material 40.
At last, shown in Figure 23 E, with the gold-tinted wire engage, the mode of wire-bonded forms and is electrically connected 60 (being specially in the present embodiment many wires) electrode 301 to connect a plurality of photoelectric cells, with these a plurality of photoelectric cells 30 of connecting.Wherein the material of above-mentioned wire 60 can be gold, aluminium, alloy or multiple layer metal, to form system level photoelectric structure.
Figure 24 A～Figure 24 G is the structural representation (wherein the element close or identical with the embodiment of Figure 23 will be given identical label, and be as follows) of another specific embodiment manufacturing process according to the present invention.Shown in Figure 24 A, temporary substrate 10 is provided, on temporary substrate 10, form the first articulamentum 20 of upper and lower surface tool viscosity in modes such as rotary coating, evaporation or printings, and can be by selecting place system (Pick﹠amp; Place system) photoelectric cell 30 of a plurality of not encapsulation is placed and is connected on above-mentioned the first articulamentum 20, and form a plurality of aisle district 304 at the interval region of a plurality of photoelectric cells 30, contraposition precision when wherein photoelectric cell is placed is limited to be no more than the admissible error of selecting place system, for example is no more than 15 μ tm.Wherein above-mentioned photoelectric cell 30 can be light-emitting diode, and its structure can comprise substrate 303, be formed on semiconductor epitaxial layers 302 and at least one electrode 301 on the substrate.Above-mentioned semiconductor epitaxial layers 302 can comprise the first conductive-type semiconductor layer, active layer, and the second conductive-type semiconductor layer.In a preferred embodiment, at least one electrode 301 of this photoelectric cell 30 contacts with above-mentioned the first articulamentum 20.Above-mentioned photoelectric cell 30 can send the light with identical or different wavelength, and its light emitting region can be from ultraviolet light to infrared ray.
The material of above-mentioned temporary substrate 10 can be selected from silica gel (silicone), glass, quartz, pottery, alloy or printed circuit board (PCB) (PCB); The material of above-mentioned the first articulamentum 20 can be selected from adhesive tape, for example removes adhesive tape (UV release tape) for heat removes adhesive tape (thermal release tape), ultraviolet ray, chemistry removes adhesive tape (Chemical release tape), heat resistant adhesive tape, blue film or metal; The material of the substrate 303 of above-mentioned photoelectric cell 30 can be selected from the high thermal conductive substrates such as sapphire (Sapphire), carborundum (SiC), zinc oxide (ZnO), gallium nitride (GaN) or silicon, glass, quartz, GaAs or pottery; The material of the first conductive-type semiconductor layer of above-mentioned photoelectric cell 30, active layer and the second conductive-type semiconductor layer comprises one or more material, be selected from gallium (Ga). aluminium (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N) and silicon (Si) consist of group.
In addition, shown in Figure 24 A, in system level photoelectric structure of the present invention, also can coat each above-mentioned photoelectric cell 30 with fluorescent material P first.By the average coating of fluorescent material, a stable white light source can be provided, and the otherness of the white light of each photoelectric cell 30 on the technique after reducing.Wherein above-mentioned fluorescent material P can rotary coating, the mode such as deposition, some glue, scraper or casting film encapsulating forms.In another embodiment, above-mentioned a plurality of photoelectric cell 30 also can distinctly coat different fluorescent materials.In another embodiment, above-mentioned a plurality of photoelectric cells 30 also can optionally distinctly coat different fluorescent materials, but not all photoelectric cells 30 all coat, to blend different coloured light.For example in an embodiment, a plurality of photoelectric cells 30 can be blue light-emitting diode, and three photoelectric cells 30 in a plurality of photoelectric cells 30 are considered as one group, wherein the fluorescent material P that coats of first photoelectric cell can be the fluorescent material P that red fluorescence powder, second photoelectric cell coat and can be green emitting phosphor, and the 3rd photoelectric cell can not coat fluorescent material, sends white light with mixing.
Then, shown in Figure 24 B, the aisle district 304 that provides viscosity glue material 40 to fill up above-mentioned a plurality of photoelectric cell 30, and the first articulamentum 20 surfaces that cover above-mentioned a plurality of photoelectric cell 30 and do not covered by photoelectric cell.Wherein above-mentioned viscosity glue material 40 can utilize the modes such as rotary coating, printing or mold encapsulating to form, and viscosity glue material 40 can be elastomeric material, its material can be selected from silica gel (silicone rubber), silicones (silicone resin), silica gel, elasticity PU, porous PU, acrylic rubber (acrylic rubber) or die separation glue, such as blue film or UV glue.In the present embodiment, also can carry out glossing (polishprocess), can make the flattening surface of above-mentioned a plurality of photoelectric cell 30, and allow above-mentioned photoelectric cell 30 surfaces can not produce the viscosity glue material 40 of surplus (overflow) or depression.
Subsequently, shown in Figure 24 C, provide permanent substrate 50, and it a plurality of photoelectric cell 30 with coating viscosity glue material 40 is engaged, this juncture can be heat pressing process.In a preferred embodiment, this permanent substrate 50 directly contacts with the substrate 303 of above-mentioned photoelectric cell 30.The material of above-mentioned permanent substrate 50 can be the high grade of transparency substrates such as glass or quartz.
Then, shown in Figure 24 D, can laser lift-off, the modes such as heating separation gel film figure, dissolving glued membrane pattern remove electrode 301 and the part semiconductor epitaxial loayer 302 that exposes a plurality of photoelectric cells 30 behind above-mentioned temporary substrate 10, the first articulamentum 20 and the part viscosity glue material 40.
Then, shown in Figure 24 E, the mode with plating or evaporation is connected to a plurality of expansion electrodes (Fan-outelectrode) 305 on the electrode 301 of a plurality of photoelectric cells.Wherein expand the area of electrode 305 greater than the electrode 301 of photoelectric cell, can increase the contraposition tolerance of follow-up encapsulation.In addition, owing to strengthening the area of expansion electrode 305, will more can be effectively thermal source be led on the substrates such as the metal of follow-up encapsulation or PCB.The material of above-mentioned expansion electrode can be gold, aluminium, alloy or multi-layer metal structure.
At last, shown in Figure 24 F～24G, cut this a plurality of photoelectric cells, form each other tube core after, by at least one scolder (solder) 601 will it gluing to time carrier (submount) 60, with the formation system level photoelectric structure.Above-mentioned inferior carrier 60 can be that lead frame (lead frame) or large scale are inlayed substrate (mounting substrate), with the circuit planning that makes things convenient for system level photoelectric structure and improve its radiating effect.
It should be noted that, processing step among above-mentioned two embodiment is mutually reference or combination also, also optionally coat fluorescent material such as the photoelectric cell among the first embodiment, but or behind Figure 23 D also subsequent steps such as the making of hookup 24E expansion electrode, diced chip; In like manner, the second embodiment also can be behind Figure 24 D the step of hookup 23E, be electrically connected a plurality of photoelectric cells with wire.
In addition, in another embodiment of the present invention, continue after Figure 23 B or Figure 24 B, shown in Figure 25 A, permanent substrate 50 can be provided, and after being bonded on this permanent substrate 50 on the second articulamentum 70 first, it a plurality of photoelectric cell 30 with coating viscosity glue material 40 is engaged, this juncture can be heat pressing process.Wherein the material of above-mentioned the second articulamentum 70 can be SiO
x, SiN
x, silica gel (silicone).In another embodiment of the present invention, continue after Figure 23 B or Figure 24 B, shown in Figure 25 B, above-mentioned the second articulamentum 70 also can be the second articulamentum 70 ' that comprises a plurality of passages 701, the heat radiation of native system level photoelectric cell can be increased, and the wattage that to bear can be promoted.Wherein the material of above-mentioned passage 701 can be metal, such as copper, aluminium, nickel or alloy.In addition, passage 701 can be identical material with the second articulamentum 70 ' also, for example sapphire, metal, silicon nitride, aluminium oxide.
In another embodiment of the present invention, continue after Figure 23 B or Figure 24 B, as shown in figure 26, permanent substrate 50 can be provided, and utilize the intermediary layer (not shown) to connect first the first reflector 80 this permanent substrate 50 first, rejoin after on the second articulamentum 70, it a plurality of photoelectric cell 30 with coating viscosity glue material 40 is engaged, this juncture can be heat pressing process.Wherein, the material of intermediary layer for example is SiO
x, SiN
x, silica gel (silicone) etc.The material in above-mentioned the first reflector 80 can be the metals such as silver, aluminium or platinum, perhaps is distributed Bragg reflector (the Distributed Bragg Reflector that is comprised of dielectric medium or semiconductor; DBR).In the present embodiment, by the design in this first reflector 80, the light that can increase native system level photoconductive structure takes out efficient.
If may cause lateral light loss and/or light extraction efficiency to reduce in order further to avoid above-mentioned a plurality of photoelectric cell 30 to put too closely, in another embodiment of the present invention, continue after Figure 23 B or Figure 24 B, as shown in figure 27, optional usefulness has the substrate 50 ' of little pyramid array (Micro-pyramid array).Wherein, this little pyramid array base palte 50 ' can utilize the conductor etching technology to make, and the form of a plurality of little pyramid 501 on the substrate can be the polygonal wimble structures such as circular cone, pyrometric cone and quadrangular pyramid, and wherein the base angle of above-mentioned little pyramid 501 can be between 20～70 degree.In another embodiment, but the second reflector of coating tool high reflectance also, the surface of above-mentioned little pyramid array base palte 50 ', metals such as silver, aluminium, platinum; In addition, the material of above-mentioned little pyramid array base palte 50 ' can be silica gel (silicone), glass, quartz, pottery, alloy or printed circuit board (PCB) (PCB), also can select highly heat-conductive material to increase the element reliability, its material can be copper, aluminium, pottery, silicon.The a plurality of photoelectric cells 30 of this little pyramid array base palte 50 ' with coating viscosity glue material 40 can be engaged by contraposition (alignment) during making, this juncture can be heat pressing process.In the present embodiment, by the design of this little pyramid array base palte 50 ', the lateral light reflection of native system level photoconductive structure can be become forward light in order to increasing the light extraction efficiency.
Though above each accompanying drawing is only distinguished corresponding specific embodiment with explanation, yet, illustrated or the element that discloses among each embodiment, execution mode, design criterion, and know-why except in each other aobvious mutually conflict, contradiction or be difficult to the common implementing, those skilled in the art are when complying with its required any reference, exchange, collocation, coordination or merging.
Although the present invention has illustrated as above, the scope that so it is not intended to limiting the invention, enforcement order or the material and technology method of using.Modify and change, neither spirit of the present invention and the scopes of taking off for various being equal to that the present invention does.
Claims (54)
1. system level photoelectric structure manufacture method, its step comprises at least:
Temporary substrate is provided;
A plurality of not packaged photoelectronic elements are provided, are connected on this substrate, and form a plurality of aisle district;
Viscosity glue material is provided, fills up this aisle district and cover this not packaged photoelectronic element;
Permanent substrate is provided, engages these a plurality of photoelectric cells by this viscosity glue material;
Remove this temporary substrate; And
Form the expansion electrode on the electrode and viscosity glue material of these a plurality of not packaged photoelectronic elements respectively.
2. the system as claimed in claim 1 level photoconductive structure manufacture method, also comprising provides the first articulamentum, is formed on this temporary substrate and connects these a plurality of not packaged photoelectronic elements.
3. the system as claimed in claim 1 level photoconductive structure manufacture method, wherein these a plurality of not packaged photoelectronic elements are light-emitting diode, and have identical or different emission wavelength.
4. system level photoelectric structure manufacture method as claimed in claim 3, wherein this light-emitting diode comprises at least:
Substrate;
Semiconductor epitaxial layers is formed on this substrate, comprises the first conductive-type semiconductor layer, active layer, and the second conductive-type semiconductor layer; And
Electrode is formed on this first conductive-type semiconductor.
5. system level photoelectric structure manufacture method as claimed in claim 4 also comprises the electrode that many wires of formation are electrically connected these a plurality of not packaged photoelectronic elements.
6. the system as claimed in claim 1 level photoconductive structure manufacture method after wherein these a plurality of not packaged photoelectronic elements are connected in this temporary substrate, distinctly coats fluorescent material.
7. the system as claimed in claim 1 level photoconductive structure manufacture method also comprises formation the second articulamentum between these a plurality of not packaged photoelectronic elements and this permanent substrate.
8. system level photoelectric structure manufacture method as claimed in claim 7, wherein this second articulamentum comprises a plurality of passages.
9. system level photoelectric structure manufacture method as claimed in claim 7 also comprises formation the first reflector between this permanent substrate and this second articulamentum.
10. the system as claimed in claim 1 level photoconductive structure manufacture method, wherein this permanent substrate is the array base palte with a plurality of little pyramids.
11. the system as claimed in claim 1 level photoconductive structure manufacture method, wherein the material of this temporary substrate and this permanent substrate is silica gel, glass, quartz, pottery, alloy or printed circuit board (PCB).
12. the system as claimed in claim 1 level photoconductive structure manufacture method, wherein these a plurality of photoelectric cells are to utilize to select place system and be positioned on this temporary substrate.
13. the system as claimed in claim 1 level photoconductive structure manufacture method, wherein the material of this viscosity glue material is silica gel, silicones, elastic polyurethane, cellular polyurethane, acrylic rubber, blue film or ultraviolet curing glue.
14. the system as claimed in claim 1 level photoconductive structure manufacture method, wherein this viscosity glue material forms with rotary coating, printing or mold encapsulating mode.
15. the system as claimed in claim 1 level photoconductive structure manufacture method, wherein this viscosity glue material engages these a plurality of photoelectric cells and this permanent substrate by heat pressing process.
16. the system as claimed in claim 1 level photoconductive structure manufacture method, wherein this temporary substrate removes by laser lift-off, heating separation gel film figure or dissolving glued membrane pattern process.
17. system level photoelectric structure manufacture method as claimed in claim 2, wherein this first articulamentum is that heat removes adhesive tape, heat resistant adhesive tape or blue film.
18. system level photoelectric structure manufacture method as claimed in claim 5, wherein the material of this wire is gold, aluminium, alloy or multiple layer metal.
19. system level photoelectric structure manufacture method as claimed in claim 4, wherein this permanent substrate of substrate contacts of this temporary substrate of the electrode contact of this light-emitting diode and this light-emitting diode.
20. system level photoelectric structure manufacture method as claimed in claim 4, wherein the material of this first conductive-type semiconductor layer, this active layer and this second conductive-type semiconductor layer of this light-emitting diode comprises one or more material, is selected from gallium, aluminium, indium, arsenic, phosphorus, nitrogen and group that silicon consists of.
21. system level photoelectric structure manufacture method as claimed in claim 7, wherein the material of this second articulamentum is SiO
xOr SiN
x
22. system level photoelectric structure manufacture method as claimed in claim 8, wherein the material of this passage is metal or alloy.
23. system level photoelectric structure manufacture method as claimed in claim 9, wherein the material in this first reflector is silver, aluminium or platinum.
24. system level photoelectric structure manufacture method as claimed in claim 10, wherein this array base palte material with a plurality of little pyramids is silica gel, glass, quartz, pottery, alloy or printed circuit board (PCB).
25. system level photoelectric structure manufacture method as claimed in claim 10, wherein this little pyramid is circular cone or polygonal wimble structure.
26. system level photoelectric structure manufacture method as claimed in claim 10, wherein the base angle angle of this little pyramid is between 20～70 degree.
27. system level photoelectric structure manufacture method as claimed in claim 10, wherein this has covering surface second reflector of the array base palte of a plurality of little pyramids.
28. system level photoelectric structure manufacture method as claimed in claim 27, wherein the material in this second reflector is silver, aluminium or platinum.
29. the system as claimed in claim 1 level photoconductive structure manufacture method also comprises these a plurality of not packaged photoelectronic elements of cutting, behind each other tube core of formation, by this expansion electrode, it is engaged on time carrier.
30. system level photoelectric structure manufacture method as claimed in claim 29, wherein this time carrier is that lead frame or large scale are inlayed substrate.
31. a system level photoelectric structure comprises at least:
Permanent substrate; And
A plurality of not packaged photoelectronic elements are formed on this permanent substrate, and the territory, septal area forms at least one aisle district betwixt, and fill up this aisle district with viscosity glue material,
Wherein expand on the electrode and viscosity glue material that electrode is formed at these a plurality of not packaged photoelectronic elements respectively.
32. system level photoelectric structure as claimed in claim 31 also comprises with many these a plurality of not packaged photoelectronic elements of wires electrical connection.
33. system level photoelectric structure as claimed in claim 31 also comprises articulamentum, is formed on this permanent substrate and these are a plurality of not between the packaged photoelectronic element.
34. system level photoelectric structure as claimed in claim 33, wherein this articulamentum comprises a plurality of passages.
35. system level photoelectric structure as claimed in claim 33 also comprises the first reflector, is formed between this permanent substrate and this articulamentum.
36. system level photoelectric structure as claimed in claim 33, wherein this permanent substrate is the array base palte of the little pyramid of tool.
37. system level photoelectric structure as claimed in claim 36, wherein this little pyramid array base palte has a plurality of little pyramids.
38. system level photoelectric structure as claimed in claim 31, wherein these a plurality of not packaged photoelectronic elements are light-emitting diode, and have identical or different emission wavelength.
39. system level photoelectric structure as claimed in claim 38, wherein this light-emitting diode comprises at least:
Substrate;
Semiconductor epitaxial layers is formed on this substrate, comprises the first conductive-type semiconductor layer, active layer, and the second conductive-type semiconductor layer; And
Electrode is formed on this first conductive-type semiconductor.
40. system level photoelectric structure as claimed in claim 39 also comprises with fluorescent material coating these a plurality of light-emitting diodes.
41. system level photoelectric structure as claimed in claim 40, the fluorescent material that wherein coats these a plurality of light-emitting diodes is identical or different material.
42. system level photoelectric structure as claimed in claim 39, wherein the substrate of this light-emitting diode directly contacts this permanent substrate.
43. system level photoelectric structure as claimed in claim 31, wherein the material of this permanent substrate is silica gel, glass, quartz, pottery, alloy or printed circuit board (PCB).
44. system level photoelectric structure as claimed in claim 31, wherein the material of this viscosity glue material is silica gel, silicones, elastic polyurethane, cellular polyurethane, acrylic rubber, blue film or ultraviolet curing glue.
45. system level photoelectric structure as claimed in claim 31, wherein the material of this wire is gold, aluminium, alloy or multiple layer metal.
46. system level photoelectric structure as claimed in claim 39, wherein the material of this first conductive-type semiconductor layer, this active layer and this second conductive-type semiconductor layer of this light-emitting diode comprises one or more material, is selected from gallium, aluminium, indium, arsenic, phosphorus, nitrogen and group that silicon consists of.
47. system level photoelectric structure as claimed in claim 33, wherein the material of this articulamentum is SiO
xOr SiN
x
48. system level photoelectric structure as claimed in claim 34, wherein the material of this passage is metal or alloy.
49. system level photoelectric structure as claimed in claim 35, wherein the material in this first reflector is silver, aluminium or platinum.
50. system level photoelectric structure as claimed in claim 36, wherein the material of the array base palte of the little pyramid of this tool is silica gel, glass, quartz, pottery, alloy or printed circuit board (PCB).
51. system level photoelectric structure as claimed in claim 37, wherein this little pyramid is circular cone or polygonal wimble structure.
52. system level photoelectric structure as claimed in claim 37, wherein the base angle angle of this little pyramid is between 20～70 degree.
53. system level photoelectric structure as claimed in claim 36, wherein covering surface second reflector of this little pyramid array base palte.
54. system level photoelectric structure as claimed in claim 53, wherein the material in this second reflector is silver, aluminium or platinum.
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| EP2600168A1 (en) | 2011-12-01 | 2013-06-05 | Leica Geosystems AG | Distance sensor |
| US20130161654A1 (en) * | 2011-12-21 | 2013-06-27 | Phostek, Inc. | Reflective layer on dielectric layer for led array |
| US20130161667A1 (en) * | 2011-12-21 | 2013-06-27 | Phostek, Inc. | Patterned reflective layer on dielectric layer for led array |
| CN103426895A (en) * | 2012-05-25 | 2013-12-04 | 华夏光股份有限公司 | Light-emitting diode array and forming method thereof |
| WO2017008251A1 (en) * | 2015-07-14 | 2017-01-19 | Goertek. Inc | Assembling method, manufacturing method, device and electronic apparatus of flip-die |
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| CN101350386A (en) * | 2007-07-19 | 2009-01-21 | 亿光电子工业股份有限公司 | Method for incising LED crystal particle |
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| CN103199170A (en) | 2013-07-10 |
| CN103199170B (en) | 2016-08-03 |
| CN101996892A (en) | 2011-03-30 |
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