CN101350386A - Method for incising LED crystal particle - Google Patents
Method for incising LED crystal particle Download PDFInfo
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- CN101350386A CN101350386A CNA2007101304502A CN200710130450A CN101350386A CN 101350386 A CN101350386 A CN 101350386A CN A2007101304502 A CNA2007101304502 A CN A2007101304502A CN 200710130450 A CN200710130450 A CN 200710130450A CN 101350386 A CN101350386 A CN 101350386A
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- crystal particle
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Abstract
The invention relates to a method for cutting crystal particles of a luminescent diode, which comprises the following steps: making the action of precutting on the back side of a base plate, then carrying out the epitaxial process on the base plate, then cutting, splicing and washing on the front surface of the crystal particle of the luminescent diode, thereby a luminescent diode crystal particle whose thickness is 200-400mum can be obtained. The method can increase the thickness of the luminescent diode crystal particle, thereby the extraction efficiency of the inner light can be increased, the packing brightness is effectively improved, and the action of thinning the base plate is saved.
Description
Technical field
The present invention relates to a kind of method of LED crystal particle cutting.
Background technology
Hard brittle material such as Silicon Wafer, glass and sapphire are more and more general in the application of semiconductor, LCD TV and light-emitting diode, and industry often need be cut on hard brittle material or the processing of surface micro-structure.In general, cutting is divided into laser cutting and diamond cutting, two kinds of cut mode respectively have pluses and minuses, laser cutting belongs to the photo-thermal processing mechanism, and hard brittle material is easily because of high temperature produces the crack, owing to be not the natural plane of disruption that utilizes crystal in cutting process, so also there is slight crack on the surface, and crystal grain is subjected to the relation of LASER HEATING easily and influences power output, and yield is low, but price cheaply is its advantage; And diamond cutting is if be used in high material of hardness such as sapphire, and diamond cutter easily consumes, and increases more than ten times at the light-emitting diode of clipping time and the more traditional quaternary of emery wheel coefficient of losses, considers down at cost and slowly eliminates.
Industry with the flow process of sapphire substrate manufacturing LED crystal particle is at present: at first, provide a sapphire substrate, its thickness is 430 μ m.Then, on sapphire substrate, build brilliant processing procedure.Moreover in order to be beneficial to cutting, will build wafer grinding to thickness is 90-100 μ m.Then, cut from the front of LED crystal particle, the action of splitting and cleaning.The LED crystal particle that known according to this flow process is made, its thickness is 90 μ m.
Yet, by finding in the research, when die thickness doubles, can effectively increase interior lights and take out efficient (internal light extraction efficiency), die package brightness meeting increases 10-15%.But be subject to the cutting technique of present industry in the middle reaches die process, promptly use special laser cutting mode, the degree of depth can only reach 50-70 μ m at most, if use the diamond cutting mode, because sapphire hardness is only second to diamond, diamond cutter easily consumes, and consider down at cost and slowly eliminate, be the difficulty that present industry need overcome so how under existing technical limitations, to increase the thickness of LED crystal particle.
This shows that the method for above-mentioned existing LED crystal particle cutting obviously still has inconvenience and defective, and demands urgently further being improved in the use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and general processing method does not have appropriate measure to address the above problem, this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found the method that a kind of new LED crystal particle is cut, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Because the defective that the method for above-mentioned existing LED crystal particle cutting exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding the method that a kind of new LED crystal particle is cut, can improve the method for general existing LED crystal particle cutting, make it have more practicality.Through constantly research, design, and after studying repeatedly and improving, create the present invention who has practical value finally.
Summary of the invention
Main purpose of the present invention is, overcome the defective of the method existence of existing LED crystal particle cutting, and the method that provides a kind of new LED crystal particle to cut, technical problem to be solved is to make it increase the thickness of LED crystal particle, effectively improve package brightness, be very suitable for practicality.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to the method that a kind of LED crystal particle of the present invention's proposition is cut, it comprises: a substrate is provided, carries out one at a back side of this substrate and cut action in advance; Carry out a brilliant processing procedure of heap of stone in a front of this substrate; And cut from the front of this LED crystal particle, the action of splitting and cleaning.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The method of aforesaid LED crystal particle cutting, the material of wherein said substrate is a sapphire.
The method of aforesaid LED crystal particle cutting, the depth of cut of wherein said substrate is about 1/3rd to 1/2nd of this substrate thickness.
The method of aforesaid LED crystal particle cutting, the thickness of wherein said LED crystal particle is 200-400 μ m.
The method of aforesaid LED crystal particle cutting, wherein said brilliant processing procedure of heap of stone comprises:
Form one first electrical semiconductor layer on this substrate;
Form an active layers on this first electrical semiconductor layer;
Form one second electrical semiconductor layer on this active layers;
Form a contact layer on this second electrical semiconductor layer;
Form one first electrical electrode on exposed this first electrical semiconductor layer of part; And
Form one second electrical electrode on this contact layer.
The present invention compared with prior art has tangible advantage and beneficial effect.As known from the above, for achieving the above object, the invention provides a kind of method of LED crystal particle cutting, this patterning method is a two-part patterning method.According to a preferred embodiment of the present invention, this two-part patterning method comprises following steps at first, and a substrate is provided, and its material is a sapphire, carries out one at the back side of this substrate and cuts action in advance, and the degree of depth of cutting is about 1/3rd to 1/2nd of substrate thickness.Then, on substrate, build brilliant processing procedure.Then, cut from the front of LED crystal particle, the action of splitting and cleaning, obtain the LED crystal particle that thickness is 200-400 μ m.
By technique scheme, the method of LED crystal particle cutting of the present invention has following advantage and beneficial effect at least: the method for LED crystal particle cutting of the present invention, can increase the thickness of LED crystal particle, thereby the increase interior lights is taken out efficient, effectively improve package brightness, and can omit processing procedure action the substrate wear down.
In sum, the invention relates to a kind of light-emitting diode (Light Emitting Diode, LED) method of crystal grain cutting.The step of the method is: do the action of cutting in advance earlier at substrate back, then build brilliant processing procedure on substrate, cut from the front of LED crystal particle then, the action of splitting and cleaning.Can obtain the LED crystal particle that thickness reaches 200-400 μ m by this method.The present invention has above-mentioned plurality of advantages and practical value, no matter it all has bigger improvement on processing method or function, obvious improvement is arranged technically, and produced handy and practical effect, and the method for more existing LED crystal particle cutting has the outstanding multinomial effect of enhancement, thereby being suitable for practicality more, and having the extensive value of industry, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Figure 1A is the substrate side surfaces schematic diagram that illustrates according to a preferred embodiment of the present invention.
Figure 1B illustrates according to the substrate of a preferred embodiment of the present invention to cut side schematic view in advance.
Fig. 1 C is the of heap of stone brilliant processing procedure schematic diagram that illustrates according to a preferred embodiment of the present invention.
Fig. 1 D is the LED crystal particle profile that illustrates according to a preferred embodiment of the present invention.
140: 150: the first electrical semiconductor layers of substrate
160: 170: the second electrical semiconductor layers of active layers
180: 190: the first electrical electrodes of contact layer
200: the second electrical electrode h1: substrate thickness
H2: pre-cutting-in degree h3: the substrate thickness of finishing crystal grain
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, its embodiment of method, processing method, step, feature and the effect thereof of the LED crystal particle cutting that foundation the present invention is proposed, describe in detail as after.
The invention relates to a kind of method of LED crystal particle cutting.See also Figure 1A, it illustrates the substrate side surfaces schematic diagram according to a preferred embodiment of the present invention.Wherein, the material of substrate 140 is a sapphire, and its thickness h 1 is 430 μ m.Earlier define Cutting Road with light shield at the back side of substrate 140.State 100 is for going to the substrate 140 of cutting step in advance.
See also Figure 1B, it illustrates according to the substrate of a preferred embodiment of the present invention and cuts side schematic view in advance.At the back side of substrate 140, carry out an action of cutting in advance according to the Cutting Road that defines, in the present embodiment, the degree of depth h2 that cuts in advance is 1/3rd of substrate 140 thickness.State 110 is for cutting the substrate 140 after action is finished in advance.
See also Fig. 1 C, it illustrates the of heap of stone brilliant processing procedure schematic diagram according to a preferred embodiment of the present invention.Substrate 140 the state in of heap of stone brilliant processing procedure of state 120 for cutting in advance.The brilliant first electrical semiconductor layer 150 of heap of stone in regular turn, active layers 160 and the second electrical semiconductor layer 170 on substrate 140.
See also Fig. 1 D, it illustrates the LED crystal particle profile according to a preferred embodiment of the present invention.State 130 is for finishing the LED crystal particle behind the cutting processing procedure.Wherein comprise a substrate 140, be formed at the electrical semiconductor layer 150 of one first on the substrate 140, be formed at a active layers 160 on the first electrical semiconductor layer 150, be formed at the electrical semiconductor layer 170 of one second on the active layers 160, be formed at a contact layer 180 on the second electrical semiconductor layer 170, be formed at one first electrical electrode 190 on the exposed part first electrical semiconductor layer 150 and be formed at the electrical electrode 200 of one second on the contact layer 180.The thickness h 3 of substrate 140 is 200-400 μ m.
By the invention described above preferred embodiment as can be known, use the present invention and have following advantage.The method of LED crystal particle cutting of the present invention can increase the thickness of LED crystal particle, thereby increases interior lights taking-up efficient, effectively improves package brightness, and can omit the processing procedure action with the substrate wear down.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solution of the present invention content, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (5)
1, a kind of method of LED crystal particle cutting is characterized in that it comprises:
One substrate is provided, carries out one at a back side of this substrate and cut action in advance;
Carry out a brilliant processing procedure of heap of stone in a front of this substrate; And
Cut from the front of this LED crystal particle, the action of splitting and cleaning.
2, the method for LED crystal particle cutting according to claim 1, the material that it is characterized in that wherein said substrate is a sapphire.
3, the method for LED crystal particle cutting according to claim 1 is characterized in that the depth of cut of wherein said substrate is about 1/3rd to 1/2nd of this substrate thickness.
4, the method for LED crystal particle cutting according to claim 1, the thickness that it is characterized in that wherein said LED crystal particle is 200-400 μ m.
5, the method for LED crystal particle cutting according to claim 1 is characterized in that wherein said brilliant processing procedure of heap of stone comprises:
Form one first electrical semiconductor layer on this substrate;
Form an active layers on this first electrical semiconductor layer;
Form one second electrical semiconductor layer on this active layers;
Form a contact layer on this second electrical semiconductor layer;
Form one first electrical electrode on exposed this first electrical semiconductor layer of part; And
Form one second electrical electrode on this contact layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101304502A CN101350386A (en) | 2007-07-19 | 2007-07-19 | Method for incising LED crystal particle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101304502A CN101350386A (en) | 2007-07-19 | 2007-07-19 | Method for incising LED crystal particle |
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| CN101350386A true CN101350386A (en) | 2009-01-21 |
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| CNA2007101304502A Pending CN101350386A (en) | 2007-07-19 | 2007-07-19 | Method for incising LED crystal particle |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101996892B (en) * | 2009-08-17 | 2013-03-27 | 晶元光电股份有限公司 | System level photoelectric structure and manufacturing method thereof |
| CN104465909A (en) * | 2014-12-30 | 2015-03-25 | 圆融光电科技有限公司 | Sapphire substrate, preparing method thereof and manufacturing method for light-emitting diode |
| US8999736B2 (en) | 2003-07-04 | 2015-04-07 | Epistar Corporation | Optoelectronic system |
-
2007
- 2007-07-19 CN CNA2007101304502A patent/CN101350386A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8999736B2 (en) | 2003-07-04 | 2015-04-07 | Epistar Corporation | Optoelectronic system |
| US9748449B2 (en) | 2003-07-04 | 2017-08-29 | Epistar Corporation | Optoelectronic system |
| CN101996892B (en) * | 2009-08-17 | 2013-03-27 | 晶元光电股份有限公司 | System level photoelectric structure and manufacturing method thereof |
| CN103199170A (en) * | 2009-08-17 | 2013-07-10 | 晶元光电股份有限公司 | System-level photoelectric structure and manufacturing method thereof |
| CN103199170B (en) * | 2009-08-17 | 2016-08-03 | 晶元光电股份有限公司 | System level photoelectric structure and preparation method thereof |
| CN104465909A (en) * | 2014-12-30 | 2015-03-25 | 圆融光电科技有限公司 | Sapphire substrate, preparing method thereof and manufacturing method for light-emitting diode |
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Open date: 20090121 |