200903836 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種發光二極體晶粒切割的方法。 【先前技術】 硬脆性材料如矽晶圓、玻璃和藍寶石在半導體、液晶 電視和發光二極體的應用越來越普遍，業界經常需要在硬 脆性材料上進行切割或表面微結構的加工。一般來說，切 割分成雷射切割和鑽石切割，兩種切割模式各有優缺點， 雷射切割屬於光熱加工機制，在切割過程中硬脆性材料易 因高溫產生裂縫，由於不是利用晶體的自然斷裂面，所以 表面亦有裂痕，且晶粒容易受到雷射加熱的關係而影響輪 出功率，良率低，但價錢便宜為其優勢；而鑽石切割若使 用於硬度高的材料如藍寶石，鑽石刀易耗損，在切割時間 和砂輪耗損率較傳統四元的發光二極體增加十倍以上，在 成本考量下已慢慢淘汰。 目前業界以藍寶石基板製造發光二極體晶粒的流程 為··首先，提供一藍寶石基板，其厚度為43〇Mm。接著， 在藍寶石基板上進行磊晶製程。再來，為了利於切割，將 磊晶片研磨至厚度為90〜l〇0/zm。然後，從發光二極體晶 粒的正面進行切割、劈裂和清洗的動作。依此習知流程製 造的發光二極體晶粒，其厚度為9〇ym。 然而，由研究中發現，當晶粒厚度增加一倍時，能有 效增加内部光取出效率（int⑽al light extracti〇n efficiency)，晶粒封裝亮度會增加1〇〜15%。但受限於目前 200903836 業界在中游晶粒製程的切割技術，即使用特殊的雷射切割 方式’深度最多只能達50〜70# m，如果用鑽石切割方式， 因為藍寶石硬度僅次於鑽石，鑽石刀易耗損，在成本考量 T已經慢慢淘汰’所以如何在現有的技術限制下增加發= 二極體晶粒的厚度是目前業界需克服的困難。 【發明内容】 纟發明之目的就是在提供—種發光二極體晶粒切割的 〇 彳法，藉以增加發光二極體晶粒的厚度，有效提高封裝亮 度。 根據本發明之上述目的，提出一種發光二極體晶粒切 割的方法，此切割法為一兩段式切割法。依照本發明一較 佳實施例，此兩段式切割法包含以下步驟：首先，提供一 基板，其材質為藍寶石，在此基板的背面進行—預切動作， 切割的深度約為基板厚度的三分之一至二分之一。接著， 結板上進行蟲晶製程。然後，從發光二極體晶粒的正面 進行切割、劈裂和清洗的動作，得到厚度為200〜4_m的 發光二極體晶粒。 本發明之發光二極體晶粒切割的方法，可以增加發光 二極，晶粒的厚度，因而增加内部光取出效率，有效提高 、裳儿度並可省略將基板磨薄的製程動作。 【實施方式】 彔昭t發明係有關於一種發光二極體晶粒切割的方法。請 圖其繪示依照本發明一較佳實施例之基板側面 200903836 示意圖。其中，基板140之材質為藍寶石，其厚度hl為43〇 # m。先在基板140的背面以光罩定義好切割道。狀態1 〇〇 為準傭做預切步驟之基板140。 請參照第1B圖，其繪示依照本發明—較佳實施例之基 板預切侧面示意圖。在基板14〇的背面，依照定義好之切 割道進行一預切的動作，在本實施例中，預切的深度h2為 基板140厚度的二分之一。狀態no為預切動作完成後之 基板140。 ,印參照ic圖，其繪示依照本發明一較佳實施例之磊晶 製程示意圖。狀態120為預切好之基板14〇在磊晶製程中 之狀態。在基板140上依序遙晶第一電性半導體層I%、 主動層160以及第二電性半導體層17〇。 請參照1D圖，其繪示依照本發明一較佳實施例之發光 一極體晶粒剖面圖。狀態13〇為完成切割製程後之發光二 極體晶粒。其中包含一基板14〇、形成於基板14〇上之一第 一電性半導體層150、形成於第一電性半導體層15〇上之一 主動層160、形成於主動層16〇上之一第二電性半導體層 170、形成於第二電性半導體層m上之—接觸層18〇、形 成於裸露之部分第一電性半導體層150上之一第一電性電 極190、以及形成於接觸| 18〇上之一第二電性電極細。 基板140的厚度h3為2〇〇〜4〇〇/zm。 由上述本發明較佳實施例可知，應用本發明具有下列 優點。本發明之發光二極體晶粒切割的方法，可以增加發 光二極體晶粒的厚度，因而增加内部光取出效率，有效提 局封裝亮度’並可省略將基板磨薄的製程動作。 200903836 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明’任何熟習此技藝者，在不脫離本發明之精 神和範圍内，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 能更明顯易懂，所附圖式之詳細說明如下： 第1A圖係繪示依照本發明一較佳實施例之基板側面 示意圖。 第1B圖係繪示依照本發明一較佳實施例之基板預切 側面示意圖。 第1C圖係繪示依照本發明一較佳實施例之磊晶製程 示意圖。 第1D圖係繪示依照本發明一較佳實施例之發光二極 體晶粒剖面圖。 【主要元件符號說明】 140 :基板 160 :主動層 180 :接觸層 200 :第二電性電極 h2 :預切深度 150:第一電性半導體層 170 :第二電性半導體層 190 :第一電性電極 hi :基板厚度 h3 :完成晶粒之基板厚度200903836 IX. INSTRUCTIONS: [Technical Field] The present invention relates to a method of dicing a light-emitting diode die. [Prior Art] Hard and brittle materials such as germanium wafers, glass and sapphire are increasingly used in semiconductors, liquid crystal televisions, and light-emitting diodes. The industry often requires cutting or surface microstructure processing on hard and brittle materials. In general, cutting is divided into laser cutting and diamond cutting. Both cutting modes have their own advantages and disadvantages. Laser cutting is a photothermal processing mechanism. During the cutting process, hard and brittle materials are prone to cracks due to high temperature, because they do not utilize natural fracture of crystals. Surface, so there are cracks on the surface, and the crystal grains are easily affected by laser heating, which affects the power of rotation, and the yield is low, but the price is cheap. The diamond cutting is used for high hardness materials such as sapphire and diamond knife. It is easy to wear, and the cutting time and the wear rate of the grinding wheel are more than ten times higher than that of the traditional quaternary light-emitting diode. It has been slowly eliminated under the cost consideration. At present, the process of manufacturing a light-emitting diode die from a sapphire substrate is as follows. First, a sapphire substrate having a thickness of 43 〇Mm is provided. Next, an epitaxial process is performed on the sapphire substrate. Further, in order to facilitate the cutting, the epitaxial wafer was ground to a thickness of 90 to 1 〇 0 / zm. Then, the action of cutting, splitting, and cleaning is performed from the front surface of the light-emitting diode crystal. The light-emitting diode crystals produced by the conventional process have a thickness of 9 〇 ym. However, it has been found from the study that when the grain thickness is doubled, the internal light extraction efficiency (int(10)al light extracti〇n efficiency) can be effectively increased, and the grain package brightness is increased by 1 〇 15%. However, it is limited by the current 200903836 industry's cutting technology in the middle grain processing, that is, the use of special laser cutting method 'depth can only reach 50~70# m, if diamond cutting method, because sapphire hardness is second only to diamond, Diamond knives are easily worn out, and T has been slowly eliminated in cost considerations. So how to increase the thickness of the diodes under the existing technical constraints is the difficulty that the industry has to overcome. SUMMARY OF THE INVENTION The purpose of the invention is to provide a method for radiant cutting of a light-emitting diode, thereby increasing the thickness of the light-emitting diode grains and effectively improving the package brightness. In accordance with the above object of the present invention, a method of dicing a light-emitting diode die is proposed, which is a two-stage cutting method. According to a preferred embodiment of the present invention, the two-stage cutting method comprises the following steps: First, a substrate is provided, which is made of sapphire, and a pre-cutting action is performed on the back surface of the substrate, and the depth of the cutting is about three of the thickness of the substrate. One to one-half. Next, the worm crystal process is performed on the knot plate. Then, cutting, cleaving, and cleaning were performed from the front surface of the light-emitting diode crystal grains to obtain light-emitting diode crystal grains having a thickness of 200 to 4 mm. The method for cutting a light-emitting diode of the present invention can increase the thickness of the light-emitting diodes and the crystal grains, thereby increasing the internal light extraction efficiency, effectively improving the size of the substrate, and omitting the process of thinning the substrate. [Embodiment] The invention of the invention relates to a method of cutting a light-emitting diode die. BRIEF DESCRIPTION OF THE DRAWINGS A schematic view of a side surface of a substrate 200903836 in accordance with a preferred embodiment of the present invention is shown. The material of the substrate 140 is sapphire, and the thickness hl is 43 〇 # m. A dicing street is defined by a photomask on the back side of the substrate 140. State 1 基板 A substrate 140 for the pre-cut step. Referring to Figure 1B, there is shown a schematic side view of a substrate pre-cut according to the preferred embodiment of the present invention. On the back side of the substrate 14A, a pre-cut action is performed in accordance with the defined cutting path. In the present embodiment, the pre-cut depth h2 is one-half the thickness of the substrate 140. The state no is the substrate 140 after the pre-cut operation is completed. Referring to the ic diagram, a schematic diagram of an epitaxial process in accordance with a preferred embodiment of the present invention is shown. State 120 is the state of the pre-cut substrate 14 in the epitaxial process. The first electrical semiconductor layer I%, the active layer 160, and the second electrical semiconductor layer 17A are sequentially crystallized on the substrate 140. Referring to FIG. 1D, a cross-sectional view of a light-emitting diode according to a preferred embodiment of the present invention is shown. State 13 is the light-emitting diode die after the cutting process is completed. The method includes a substrate 14〇, a first electrical semiconductor layer 150 formed on the substrate 14〇, an active layer 160 formed on the first electrical semiconductor layer 15〇, and one formed on the active layer 16〇. a second electrical semiconductor layer 170, a contact layer 18 formed on the second electrical semiconductor layer m, a first electrical electrode 190 formed on the bare portion of the first electrical semiconductor layer 150, and formed in contact | One of the 18th upper second electrode is thin. The thickness h3 of the substrate 140 is 2 〇〇 4 〇〇 / zm. It will be apparent from the above-described preferred embodiments of the present invention that the application of the present invention has the following advantages. The method for cutting a light-emitting diode of the present invention can increase the thickness of the light-emitting diode crystal grains, thereby increasing the internal light extraction efficiency, effectively improving the package brightness, and omitting the process of thinning the substrate. The present invention has been described above with reference to a preferred embodiment. However, it is not intended to limit the invention to those skilled in the art, and various changes and modifications may be made without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; A schematic view of the side of the substrate. 1B is a schematic side view of a substrate pre-cut according to a preferred embodiment of the present invention. 1C is a schematic view showing an epitaxial process in accordance with a preferred embodiment of the present invention. 1D is a cross-sectional view of a light-emitting diode according to a preferred embodiment of the present invention. [Main component symbol description] 140: substrate 160: active layer 180: contact layer 200: second electrical electrode h2: pre-cut depth 150: first electrical semiconductor layer 170: second electrical semiconductor layer 190: first electric Electrode hi: substrate thickness h3: substrate thickness of completed crystal