CN100407461C - The method of manufacturing a light emitting device of high emission efficiency - Google Patents

The method of manufacturing a light emitting device of high emission efficiency Download PDF

Info

Publication number
CN100407461C
CN100407461C CN 200510126939 CN200510126939A CN100407461C CN 100407461 C CN100407461 C CN 100407461C CN 200510126939 CN200510126939 CN 200510126939 CN 200510126939 A CN200510126939 A CN 200510126939A CN 100407461 C CN100407461 C CN 100407461C
Authority
CN
China
Prior art keywords
light emitting
substrate
method
emitting element
manufacturing
Prior art date
Application number
CN 200510126939
Other languages
Chinese (zh)
Other versions
CN1976067A (en
Inventor
徐大正
杨雅兰
谢明勋
黄忠民
Original Assignee
晶元光电股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶元光电股份有限公司 filed Critical 晶元光电股份有限公司
Priority to CN 200510126939 priority Critical patent/CN100407461C/en
Publication of CN1976067A publication Critical patent/CN1976067A/en
Application granted granted Critical
Publication of CN100407461C publication Critical patent/CN100407461C/en

Links

Abstract

一种高发光效率的发光元件制造方法,包括利用一激光束照射一含半导体发光元件的晶片以将晶片切割成芯片,再以湿式酸蚀刻方式清除激光束切割时所产生的副产物(byproduct)。 The method for manufacturing a light emitting device of high emission efficiency, including the use of a laser beam comprising a semiconductor light emitting element wafer to the wafer into chips, and then remove the generated laser beam cutting byproduct (byproduct) in a wet acid etching .

Description

高发光效率的发光元件的制造方法技术领域本发明涉及一种发光元件的制造方法,特别是涉及一种高发光效皁发光元件的制造方法。 TECHNICAL FIELD high emission efficiency of the light emitting element of the present invention relates to a method of manufacturing a light emitting device, particularly to a method for producing a high-efficiency light emitting element emitting soap. 背景技术氮化物发光元件的发展应用相当广泛且极具重要性,其应用包括标志灯源、电子产品背光源、户外全彩看板、白光照明、紫外光及高容量光驱应用等。 Development and Application Nitride light emitting element is quite broad and very important, the application comprising lights sources, electronics backlight, outdoor billboards full color, white light, ultraviolet, and high-capacity optical drives and other applications. 在氛化物发光元件的结构中,蓝宝石(sapphire)及碳化硅(SiC)为其基板的主要材料。 In the structure of the light emitting element atmosphere, the main material sapphire (Sapphire), silicon carbide (SiC) for its substrate. 在氛化物发光元件的工艺中,包括以晶片作为基板并于其上形成发光叠层,再将该晶片切割成芯片的工艺。 In the process atmosphere thereof light-emitting element, a wafer comprising a substrate and a light-emitting stack is formed thereon, and then the wafer is diced into chips process. 传统的切割方法利用一钻石刀作为切割工具,于基板面先行切割后,再进行断裂工艺。 A conventional cutting method using a diamond blade as a cutting tool, after cutting the substrate surface first, and then a breaking process. 然而蓝宝石基板及碳化硅基板在硬度及强度上皆远高于一般的III-V族基板(例如硅基板或砷化镓基板),因此切割不易而耗时,再者,钻石刀耗损率也非常大,使成本相对提高。 However, the sapphire substrate and the silicon carbide substrate in hardness and strength are much higher than the general Group III-V substrate (e.g. a silicon substrate or GaAs substrate), thus cutting difficult and time-consuming, Moreover, diamond knife wear rate is very large, the cost is relatively increased. 另一种晶片切割成芯片的方法是利用激光束的高能量密度,将基板中原子与原子的键结裂解,来达到切割并分离晶片的目的。 Another method of wafer into chips with a laser beam of high energy density, the substrate atoms key knot cleavage atoms, and cut to achieve the purpose of separating the wafer. 然而在激光切割的工艺中,因激光束的高能量密度所产生的局部高温,使基板晶体键结裂解后于切割道上堆积许多副产物,该副产物会吸收发光元件所发出的光线,进而降低芯片的出光效率。 However, in the laser cutting process, local temperature because of high energy density of the laser beam generated by the cleavage of the substrate after bonding the crystal bulk scribe many byproducts, byproducts which absorbs light emitted from the light emitting element, thereby reducing the light efficiency of the chip. 因此于激光切割后如何有效去除副产物,以提升芯片的出光效率,为改善发光元件性能的一重要课题。 Thus after removal of the laser cutting byproducts how to improve the light efficiency of the chip, an important subject to improve the performance of the light emitting element. 美囯专利第5,631,190号揭露一种以干式蚀刻(dry etching)清除激光切割碳化硅基板时所产生副产物的方法。 U.S. Patent No. 5,631,190 discloses a method of removing by-products generated when the laser dicing the silicon carbide substrate to dry etching (dry etching). 当激光切穿元件至碳化硅基板时,不仅会破坏元件特性,也会在元件表面堆积切割时所产生的副产品。 When the laser element to cut through the silicon carbide substrate, not only damage the element characteristics, when the by-product will be deposited on the surface elements resulting from the cleavage. 而在使用干式蚀刻清理副产品时,除了造成干式蚀刻伤害,影响产品特性,也易造成破片产生,降低产品成品率。 And in the dry etching cleaning by-products, in addition to causing the dry etching damage affect the product properties, also cause the fragment produced, reducing the product yield. 美囯专利第6,S49,524号中揭露一种含氬氧化钾(KOH)的蚀刻液的湿式蚀刻法,以去除激光切刻蓝宝石基板后产生的副严物。 U.S. Patent No. 6, No. S49,524 wet etching to expose the etching solution containing argon hydroxide (KOH) to remove the sub Yan was produced after laser trimming sapphire substrate. 此副产物包括激光免蚀(laser ablation)蓝宝石基板后所喷烕的碎片(debris)及再熔融的氧化铝fe渣(siag)。 This by-product comprises free corrosion after laser (laser ablation) sapphire substrate discharge Xue fragments (debris) and fe alumina slag remelting (siag). 此方法在激光切割前会先镀一层保护层在切割面以防止喷烕的碎片伤害切割面,再以氢氧化钾的蚀刻液去除激光切刻蓝宝石基板后产生的副严物,但是此种清除工艺无法有效的去除再熔融的氣化铝熔渣。 This method will first plating before the laser cutting a protective layer to prevent debris from the cutting face of the cutting surface damage spray Xue, then removing the etching solution of potassium hydroxide was produced after strict sub laser trimming of the sapphire substrate, but such removal process can not effectively remove the vaporized aluminum slag remelting. 发明内容本发明提供一高发光效羊的发光元件制造方法,其步骤包括以一激光束切割一具发光元件的晶片,以及于一不小于20(TC的清洗温度下,以一酸性溶液清洗该晶片,以清除激光束切割该晶片时所产生且堆积在发光元件的副产物。该发光元件以该晶片作为基板,并于该基板上形成一发光叠层。以酸性溶液清除激光束造成的副产物,可避免发光元件产生的光线为副产物所吸收,因此能大幅提升发光元件的亮度.而且,酸性溶液能快速清除堆积在发光元件上的副产物,大幅减少清除所花费的时间,并可避免传统干式蚀刻所造成的破片问题,以提升产品的成品率。附图说明图1A为一示意图,显示依本发明一优选实施例制造的高发光效率的发光元件;图1B显示本发明一优选实施例制造的高发光效率的发光元件的扫描式电子显微镜图;图1 C显示本发明一优选 SUMMARY OF THE INVENTION The present invention provides a device fabrication method of a high light emission efficiency of sheep, which step comprises a laser-beam cutting a wafer a light emitting element, and at (at washing temperature TC is a not less than 20, at an acidic solution for cleaning the wafer to remove the generated laser beam cutting of the wafer and a bulk byproduct of the light emitting element. the light-emitting element to the wafer as a substrate, and a light-emitting stack is formed on the substrate. in acidic solution is erased and the laser beam caused by the product, a light-emitting element can be avoided by-product generated light is absorbed, it is possible to significantly enhance the luminance of the light emitting element. Further, the acidic solution can quickly remove deposited on the light emitting element by-products, significantly reduce the time it takes to clear, and Fragment avoid problems caused by conventional dry etching, in order to improve product yield BRIEF DESCRIPTION oF dRAWINGS FIG 1A is a schematic view showing a light emitting element with high emission efficiency under this invention, a preferred embodiment of manufacturing the embodiment; Figure 1B shows the present invention, a a scanning electron microscope showing a light emitting device of high emission efficiency of fabricating the preferred embodiment; FIG. 1 C show a preferred embodiment of the invention, 实施例制造的高发光效率的发光元件的扫描式电子显微镜图;图2A显示本发明一优选实施例制造的高发光效率的发光元件的扫描式电子显微镜图;图2B显示本发明一优选实施例制造的高发光效率的发光元件的扫描式电子显微镜图;图2C显示本发明一优选实施例制造的高发光效率的发光元件的扫描式电子显微镜图;图3为本发明酸性溶液在不同温度与清洗时间的关系图; 图4为一示意图,显示依本发明一优选实施例制造的高发光效率的发光元件。简单符号说明 10 基板101 切割道11 副产物111 切割道内的副产物112 切割道上的副产物12 发光叠层13 第一保护层20 基板201 切割道21 副产物2U 切割道内的副产物212 切割道上的副产物22 发光叠层23 第三保护层具体实施方式请参考图1A-1C,依本发明一优选实施例的高发光效率的发光元件1的制造方法,其步骤包括于一具一第一 A scanning electron microscope showing a light emitting element of high light emission efficiency fabricated according to embodiments; FIG. 2A shows a scanning electron microscope showing a light emitting device of high emission efficiency of fabricating a preferred embodiment of the invention; FIG. 2B shows a preferred embodiment of the present invention, a scanning electron microscope showing a light emitting element manufactured high emission efficiency; FIG. 2C shows a scanning electron micrograph of the high emission efficiency light emitting element fabricated according to a preferred embodiment of the present invention; FIG. 3 of the present invention with an acid solution at different temperatures diagram cleaning time; Figure 4 is a schematic diagram showing under this a preferred invention, a light emitting element with high emission efficiency of fabricating embodiment simple symbols DESCRIPTION byproduct 11 byproduct 101 scribe line 10 of the substrate 111 cut channel 112 cutting track. byproduct byproduct 2U product of the scribe line 21 20 13 first substrate protective layer 12 light-emitting stack 201 scribe scribe byproducts 212 of the light emitting stack 22 the third protective layer 23 DETAILED DESCRIPTION Please refer to FIGS. 1A-1C, under this method of manufacturing a high luminous efficiency of a preferred embodiment of the invention, the light emitting element 1, which comprises in a first one 上表面及一第一下表面的基板10的第一上表面上形成一发光叠层12,其中该发光叠层包括一第二上表面及一第二下表面,且该第二下表面朝向该基板10、于发光叠层第二上表面涂布一第一保护层13、 >久基板下表面以一激光束切割该发光元件1、以及将该具有第一保护层13的发光元件1置入一加热状态的酸性溶液中一段时间,通过该热酸性溶液,将副产物清除。本实施例中激光束切割发光元件的工艺以波长小于365nm的激光束,对基板的第一下表面进行切割,产生切割道101。切割所造成的副产物11会堆积于切割道101内及基板第一下表面处的切割道周围,包括堆积于切割道内的第一副产物lll及基板第一下表面处的切割道周围的第二副产物112。 12 is formed on the surface of the substrate and a first lower surface on the first upper surface 10 a light-emitting stack, wherein the stack comprises a light emitting surface of the second upper and a second lower surface, and the surface facing the second lower substrate 10, a second stack on the light emitting surface is coated with a first protective layer 13,> long lower surface of the substrate to a laser beam to cut the light-emitting element 1, the light-emitting element and a first protective layer 13 is a placement acid solution in a heated state for some time, through which the hot acidic solution, by-product removal. laser beam cutting process embodiment the light emitting element of the present embodiment is smaller than the wavelength of the laser beam of 365nm, a lower surface of the first substrate is cut, 101. byproducts scribe cutter 11 caused by the scribe will accumulate around the inner surface of the substrate 101 and the first scribe line, comprising deposited in the first byproduct scribe the substrate lll and the lower surface of the first second byproduct scribe around 112. 请参考图1B所示为本发明实施例的发光元件1经激光束切割后的扫描式电子显微镜上视图,于切割道周围堆积许多副产物。 Light-emitting element shown in FIG. 1B refer to one embodiment of the present invention, the laser beam by the scanning electron microscope view of the cutting, the cutting around the channel stacking many byproducts. 图1C所示为本发明实施例的发光元件1经激光束切割后的扫描式电子显微镜侧浮见图,于AA,方向切割道上及BB,方向切割道内堆积许多副尸物。 FIG 1C emitting element of the embodiment 1 by a scanning electron microscope side after floating see laser beam cutting, in AA, the direction of scribe lines and BB, the cutting direction was the accumulation of many sub-channel dead present invention is shown. 本买施例中的酸性溶液成分则为含磷酸(:《3?04)及硫酸(112804)的混合溶液,该睃性溶液的操作温度高于常温优选。 Buy component present embodiment acidic solution containing phosphoric acid was in the (?: "304), and a mixed solution of sulfuric acid (112804), which Suo operating temperature of the solution is preferably higher than ordinary temperature. 另外,于本实施例中亦可于发光元件的基板IO第一下表面涂布一第二保护层,可进一步保护基板IO,避免被酸性溶液伤害。 Further, in the present embodiment, the light emitting element may also be in the lower surface of the substrate a first coating IO a second protective layer, the substrate may be further protect IO, acidic solution to avoid being hurt. 在磷酸(H3P04)及硫酸(H2S04)混合溶液的体积比为2:1条件下,对不同溫度的酸性溶液,在不同凊洗时间下,进行移除副产物的实验。 Phosphoric acid (H3P04) and sulfuric acid (H2S04) was mixed volume ratio of 2: 1 under conditions of acidic solutions at different temperatures, at different times to wash chilly, experiments were performed to remove by-products. 请参考图2A, 在实验I中,发光元件i的切割道经过酸性溶液清洗后的扫描式电子侧視g 。 Please refer to Figure 2A, in Experiment I, the light emitting element i scribe side through a scanning electron g acidic solution after cleaning. 发光元件1以酸性溶液在130。 1 to the light emitting element 130 in an acidic solution. C的温度下清洗10分钟后,切割道101内及基板第一下表面处的切割道周围所堆积的副产物111及112仍无法被清除。 After washing C for 10 minutes at a temperature of around 101 and the scribe at the substrate surface at a first scribe the deposited byproducts 111 and 112 still can not be cleared. 请参考图2B,在实验1I中,发光元件1以酸性溶液在240。 Referring to FIG 2B, in the experiment. 1I, a light emitting element 240 in an acidic solution. C的温度下清洗2分钟后, 于基板第一下表面处的切割道周围堆积的副产物112已被清除,而切割道101 内的副产物lll仍无法被清除。 After washing for 2 minutes at a temperature of C, the scribe around the first lower surface of the substrate accumulation of byproducts 112 have been cleared, while the byproduct lll still within the dicing street 101 can not be cleared. 请参考图2C,在实验III中,发光元件l以酸性溶液在330。 Please refer to FIG. 2C, the experiment III, the light emitting element in an acidic solution to 330 l. C的温度下清洗1分钟后,切割道101内的副产物111及基板第一下表面处的切割道周围堆积的副产物112完全被清除。 After washing for 1 minute at a temperature of C, by-products within the scribe line 101 and 111 at the first surface of the scribe lower substrate 112 byproducts deposited around completely removed. 上述实-验仅为部分的实验结果,在经过多组实验后,由结果可得到图3, 曲线A为移除副产物112的操作条件底限,曲线B为移除副产物111及副严物112的操作条件底限。 Only the above experimental results section, after several experiments, obtained from the results of FIG. 3, curve A is a floor-product, operating conditions, curve B 112 to 111 and the sub-product, Yan floor 112 was operating conditions. 由图3得知,清洗程序的操作条件落于图3第I区,也就是曲线A以下的操作范围时,激光切割后的副产物无法被移除。 Seen from FIG. 3, the operation conditions fall within the washing program region I of FIG. 3, i.e. the operating range of the curve A or less, after the laser cutting byproduct can not be removed. 当清洗程序的操作条件落于图3第II区,也就是曲线A及曲线B之间的操作范围时,以酸性溶液在200。 When the operation conditions fall within the washing program zone II of FIG. 3, i.e. the operating range between curve A and curve B, at 200 to the acidic solution. C以上及250。 250 C and above. C以下的清洗温度进行清洗,副产物l 12可被移除。 C below the washing temperature washing, byproducts l 12 may be removed. 当清洗程序的操作条件落于图3第III区,也就是曲线B以上的操作范围时,以酸性溶液在大于或等于250。 When the operation conditions fall within the washing program region III of FIG. 3, the operating range is above the curve B, an acidic solution is equal to or greater than 250. C的清洗温度进行清洗,副产物111及112皆可被移除。 C is cleaned washing temperature, 111 and 112 Jieke byproducts are removed. 该酸性溶液的组成比例可依使用者需求而改变,斧使用者希望在较短时间完成,则可调高硫酸(H2S04)比例,^提升操作温度,来缩短清洗时间。 The acidic solution composition ratio may vary depending on user requirements vary, ax user wishes to complete in a short time, it can increase the proportion of sulfuric acid (H2S04), ^ enhance the operating temperature, to shorten the cleaning time. 该酸性溶液对激光切割后的副产物及基板之间有良好的选择性,酸性溶液可在不损害基板的状况下,将大部分的副产物清除,避免酸性溶液破坏元件。 The acidic solution between the substrate and the by-products after the laser cutting has a good selectivity, in the case of an acidic solution can not damage the substrate, remove most of the by-product, to avoid damage element acidic solution. 请参考图4,依本发明第二优选实施例的高发光效率的发光元件2的制造方法,其步骤包括于一具一第三上表面及一第三下表面的基板20的第三上表面形成一发光叠层22、其中该发光叠层包括一第四上表面及一第四下表面,且该第四下表面朝向该基板20、于发光叠层表面涂布一第三保护层23, 该第三保护层23的厚度约为1〜4pm、以一激光束对发光叠层的第四上表面切割该发光元件2、以及将该具有第三保护层的发光元件2置入一酸性客波中清洗,以清除激光束切割发光元件时所产生的副产物。 The method of manufacturing a high luminous efficiency 4, under this second preferred embodiment of the invention Referring to FIG. 2, the light emitting element, comprising the steps of a third on an upper surface and a third surface of the substrate 20 a third lower surface a light-emitting stack 22 is formed, wherein the light emitting stack comprises a fourth upper surface and a lower surface of the fourth, and the fourth lower surface toward the substrate 20, the light-emitting surface of the coating stack a third protective layer 23, the thickness of the third protective layer 23 is approximately 1~4pm, to a light emitting element of the laser beam cutting of a fourth upper surface of the light emitting stack 2, and a light emitting element having the third protective layer 2 into a passenger acid wave washed to remove byproduct cutting laser beam generated by the light emitting element. 本实施例中激光束切割发光元件的工艺以波长小于365nm的激光束对基板的第三上表面进行切割,产生切割道201。 A laser beam cutting process embodiment the light emitting element of the present embodiment with a laser beam of 365nm wavelength of less than a third of the cut on the surface of the substrate, the scribe line 201 is generated. 切割所造成的副产品21会堆积于切割道201内及切割道周围,包括堆积于切割道内的第三副产物211及切割道周围的第四副产物212。 21 cleavage-product would be caused by the accumulation in the scribe around the scribe and 201, deposited in the scribe line comprises a third 211 and fourth byproduct byproduct scribe around 212. 本实施例中的酸性溶液成分为磷酸(H3P04)及硫酸(H2S04)的混合容液,该酸性溶液的搡作温度高于常温优选,本实施例的温度约在320。 Acid solution in the present embodiment the component is phosphoric acid (H3P04) and sulfuric acid (H2S04) was mixed volume, shoving the operating temperature of the acid solution is preferably higher than room temperature in the present embodiment is about 320. C左右, 清洗时间为10-60秒。 About C, the washing time is 10-60 seconds. 于第二实施例中,于发光元件的基板20的第三下表面涂布一第四保护层,可进一步保护基板20,避免被酸性溶液伤害。 In the second embodiment, the third surface of the lower substrate 20 is coated with a protective layer of the fourth light emitting element may further protect the substrate 20, to avoid damage to the acidic solution. 于第二实施例中,激光束对基板20的第三上表面进行切割,尸生切割道201 ,该切割道深度可到达基板20。 In the second embodiment, the third laser beam on the surface of the substrate 20 is cut, scribe lines 201 born dead, the cutting depth of the channel 20 can reach the substrate. 在上述各实施例中,发光元件在清洗工艺后,可还包括一断裂工艺,将发光元件分离为芯片。 In the above embodiments, the light emitting element after the cleaning process may further include a breaking process, the chip is separated into the light emitting element. 在上述各实施例中,第一保护层13、第二保护层、第三保护层23及第四保护层包括选自金(Au)、铂(Pt)、 钛(Ti)、氮化硅(Si3N4)、氧化硅(Si02)、 环氧树脂(Epoxy)、光致抗蚀剂(photoresist)所构成材朴组群中的至少一种材料或其它替代性材料。 In the above embodiments, the first protective layer 13, a second protective layer, the third protective layer comprises a protective layer 23 and the fourth selected from gold (Au), platinum (Pt), titanium (Ti), silicon nitride ( Si3N4), silicon oxide (Si02), epoxy resin (epoxy), photoresist (photoresist) as the at least one material web Pak group or other alternative materials. 在上述各实施例中,基板10或20包括选自蓝宝石、SiC、 GaN、 A1N、 ZnO、 及MgO所构成材抖组群中的至少一种材料或其它替代性材枓。 In the above embodiments, the substrate 10, or 20 include those selected from sapphire, SiC, GaN, A1N, ZnO, MgO, and the material to shake at least one material group or other alternative material constituting Tu. 上述各相关实施例中的发光叠层包括一第一导电类型半导体层、 一发光层以及一第二导电类型半导体层。 Each of the light emitting stack related embodiment includes a first conductive type semiconductor layer, a light emitting layer and a second conductive type semiconductor layer. 该第一导电类型半导体层可包括选自于AlGalnP、 AlInP、 GalnP、 A1N、 GaN、 AlGaN、 InGaN、及AlInGaN所构成材料群组中的一种材抖或其替代性材料。 The first conductive type semiconductor layer may include a selected AlGalnP, one kind of material AlInP, GalnP, A1N, GaN, AlGaN, InGaN, AlInGaN and the group of materials consisting of shaking or alternative materials. 发光层可包括选自于AlGalnP、 AlInP、 GalnP、 GaN、 InGaN及AlInGaN所构成材料群组中的一种材枓或其替代性材料。 The light emitting layer may include a selected AlGalnP, one kind of materials related to them, or alternatively the material of the group of AlInP, GalnP, GaN, InGaN and AlInGaN formed. 第二导电类型半导体层可包括选自于AlGalnP、 AlInP、 GalnP、 A1N、 GaN、 AlGaN、 InGaN及AlInGaN所构成材料群组中的一种材枓或其替代性材料。 A second conductive type semiconductor layer may comprise one kind of material selected from a material as related to them, or alternatively a group of AlGalnP, AlInP, GalnP, A1N, GaN, AlGaN, InGaN and AlInGaN formed. 虽然本发明已通过各实施例说明于上,然此等实施例并非用以限制本发明的范围。 Although the present invention has been described in the embodiments, however these embodiments are not intended to limit the scope of the present invention. 对于本发明所作的各种修饰与变更,皆不脱本发明的精神与范围。 For various modifications and variations made to the invention, neither off the spirit and scope of the present invention.

Claims (12)

1. 一种发光元件的制造方法,包括: 以一激光束切割一发光元件,该发光元件包括一具有第一下表面及第一上表面的基板,以及形成于该基板第一上表面上的一发光叠层,该发光叠层包括一第二下表面及一第二上表面,该第二下表面朝向该基板;以及于一不低于200℃的清洗温度下,以一酸性溶液清洗该发光元件,清除激光束切割发光元件时所产生的副产物。 1. A method of manufacturing a light emitting device, comprising: a laser-beam cutting a light-emitting element, which comprises a light emitting element having a first surface and a first lower surface of the upper substrate, and is formed on the first upper surface of the substrate a light emitting stack, the stack comprising a light emitting surface and a second surface on a second lower, the lower surface facing the second substrate; and at a washing temperature of not lower than 200 ℃, washed with a solution of the acid a light emitting element, remove byproducts cutting laser beam generated by the light emitting element.
2、 如权利要求l所述的发光元件的制造方法,其中,该发光叠层包括: 一第一半导体层;形成于该第一半导体层上的一半导体发光层;以及形成于该半导体发光层上的一第二半导体层。 2. The method of manufacturing a light emitting device according to claim l, wherein the light emitting stack comprising: a first semiconductor layer; a semiconductor is formed on the light emitting layer on the first semiconductor layer; and a light emitting layer formed in the semiconductor a second semiconductor layer on.
3、 如权利要求l所述的发光元件的制造方法,其中,还包括于该发光叠层的第二上表面上形成一第一保护层。 3. The method of manufacturing a light emitting device according to claim l, wherein, further comprising a first protective layer formed on the second upper surface of the light emitting stack.
4、 如权利要求3所述的发光元件的制造方法,其中该第一保护层包括选自于金、柏、钛、氮化硅、氧化硅、环氧树脂、光致抗蚀剂材枓所构成材枓组群中的至少一种材抖或其它替代性材卄。 4. The method of manufacturing the light emitting element according to claim 3, wherein the first protective layer is selected from the group comprising gold, Bo, titanium, silicon nitride, silicon oxide, an epoxy resin, a photoresist material is Tu at least one material to shake or other alternative material constituting Tu Nian member of the group.
5、 如权利要求l所述的发光元件的制造方法,其中,于一激光束切割一发光元件步骤中,该激光束切割基板的第一下表面,产生一第一切割道。 5. The method of manufacturing a light emitting device according to claim l, wherein, in a light-emitting element a laser beam cutting step, the first laser beam cutting the lower surface of the substrate, generating a first scribe line.
6、 如权利要求l所述的发光元件的制造方法,其中,于一激光束切割一发光元件步骤前,形成一第二保护层于该基板的第一下表面上。 6. The method of manufacturing a light emitting device according to claim l, wherein a laser beam in a light-emitting element prior to the step of cutting, is formed on a first surface of a second lower protective layer on the substrate.
7、 如权利要求l所述的发光元件的制造方法,其中,于一激光束切割一发光元件步骤中,该激光束切割基板的第一上表面,产生一第二切割道。 7. A method of manufacturing a light emitting device according to claim l, wherein, in a light-emitting element a laser beam cutting step, the cutting laser beam on the first surface of the substrate, generating a second scribe.
8、 如权利要求7所述的发光元件的制造方法,其中,该第二切割道的深度到达基板。 8. A method as claimed in claim 7 for producing the light emitting element wherein a depth reaching the substrate, the second scribe requirements.
9、 如权利要求l所述的发光元件的制造方法,其中,该酸性溶液的成分为一磷酸及^i酸的混合溶液。 9. A method of manufacturing a light emitting device according to claim l, wherein the component of the acidic solution is a mixed solution of phosphoric acid and ^ i.
10. 10.
11、 如权利要求l所述的发光元件的制造方法,其中,于酸性溶液清洗该发光元件步骤后,还包括一断裂步骤。 11. The method of manufacturing a light emitting device according to claim l, wherein the acid solution in the washing step of the light emitting element further comprises a cleavage step.
12、如权利要求1所述的发光元件的制造方法,其中,该基板包括选自蓝宝石、SiC、 GaN、 A1N、 ZnO、及MgO所构成材朴組群中的至少一种材抖或其它替代性材抖。 12. A method of manufacturing the light emitting device according to claim 1, wherein the substrate is selected from the group comprising sapphire, SiC, GaN, A1N, ZnO, MgO, and at least one member of the group of sheet Pu shaking or other alternative material made shake.
CN 200510126939 2005-11-28 2005-11-28 The method of manufacturing a light emitting device of high emission efficiency CN100407461C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200510126939 CN100407461C (en) 2005-11-28 2005-11-28 The method of manufacturing a light emitting device of high emission efficiency

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200510126939 CN100407461C (en) 2005-11-28 2005-11-28 The method of manufacturing a light emitting device of high emission efficiency

Publications (2)

Publication Number Publication Date
CN1976067A CN1976067A (en) 2007-06-06
CN100407461C true CN100407461C (en) 2008-07-30

Family

ID=38125962

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200510126939 CN100407461C (en) 2005-11-28 2005-11-28 The method of manufacturing a light emitting device of high emission efficiency

Country Status (1)

Country Link
CN (1) CN100407461C (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI438836B (en) * 2010-11-05 2014-05-21 Win Semiconductors Corp A fabrication method for dicing of semiconductor wafers using laser cutting techniques
CN102569544A (en) * 2010-12-27 2012-07-11 同方光电科技有限公司 Method for manufacturing individual light-emitting diodes
DE112012003162T5 (en) * 2011-07-29 2014-04-17 Ats Automation Tooling Systems Inc. Systems and methods for making thin silicon rods
CN102544270A (en) * 2012-03-06 2012-07-04 中国科学院半导体研究所 Method for preparing inverted trapezoidal gallium-nitride-based light emitting diode
CN103681980B (en) * 2012-09-25 2016-12-21 上海蓝光科技有限公司 The method of cutting a light emitting diode back-reflection coating layer containing
CN103872206A (en) * 2012-12-14 2014-06-18 晶元光电股份有限公司 Method for manufacturing light emitting device and light emitting device manufactured by method
WO2014171076A1 (en) * 2013-04-17 2014-10-23 パナソニックIpマネジメント株式会社 Compound semiconductor device, method for manufacturing same, and resin-sealed semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5063421A (en) 1988-08-08 1991-11-05 Sharp Kabushiki Kaisha Silicon carbide light emitting diode having a pn junction
US5631190A (en) 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
CN1374705A (en) 2001-03-09 2002-10-16 株式会社日立制作所 Thin film transistor substrate and its producing method
CN1557698A (en) 2004-02-10 2004-12-29 山东大学 Method of synthesizing nitride crystal material at low temperature and low pressure
CN1564331A (en) 2004-04-05 2005-01-12 清华大学 Method of mfg. GaN-base LED
US6849524B2 (en) 1998-10-23 2005-02-01 Emcore Corporation Semiconductor wafer protection and cleaning for device separation using laser ablation

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5063421A (en) 1988-08-08 1991-11-05 Sharp Kabushiki Kaisha Silicon carbide light emitting diode having a pn junction
US5631190A (en) 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
CN1163014A (en) 1994-10-07 1997-10-22 克里研究公司 Method for producing high efficiency light-emitting diodes and resulting diode structures
US6849524B2 (en) 1998-10-23 2005-02-01 Emcore Corporation Semiconductor wafer protection and cleaning for device separation using laser ablation
CN1374705A (en) 2001-03-09 2002-10-16 株式会社日立制作所 Thin film transistor substrate and its producing method
CN1557698A (en) 2004-02-10 2004-12-29 山东大学 Method of synthesizing nitride crystal material at low temperature and low pressure
CN1564331A (en) 2004-04-05 2005-01-12 清华大学 Method of mfg. GaN-base LED

Also Published As

Publication number Publication date
CN1976067A (en) 2007-06-06

Similar Documents

Publication Publication Date Title
JP4642138B2 (en) Method of manufacturing a compound semiconductor device wafer
JP6547047B2 (en) Light emitting device
JP4954712B2 (en) Sapphire laser liftoff from nitride flip chip
KR100495215B1 (en) VERTICAL GaN LIGHT EMITTING DIODE AND METHOD OF PRODUCING THE SAME
KR101192598B1 (en) Method for fabricating and separating semiconductor devices
US6995032B2 (en) Trench cut light emitting diodes and methods of fabricating same
US5905275A (en) Gallium nitride compound semiconductor light-emitting device
US8053795B2 (en) Light emitting device and method for fabricating the same
JP4841378B2 (en) Method for manufacturing a vertically-structured light emitting diodes
EP1692719B1 (en) Methods for preparing semiconductor substrates and dicing the same
CN101901858B (en) Vertical structure semiconductor devices
US5814532A (en) Method of manufacturing semiconductor laser
CN100492610C (en) Method for production of semiconductor chips
KR100483049B1 (en) A METHOD OF PRODUCING VERTICAL GaN LIGHT EMITTING DIODES
KR101113878B1 (en) Light emitting diode having vertical topology and method of making the same
CN102403415B (en) A method of manufacturing a light emitting diode
US8927348B2 (en) Method of manufacturing group-III nitride semiconductor light-emitting device, and group-III nitride semiconductor light-emitting device, and lamp
CN101099223B (en) Light emitting diode with conducting metal substrate
KR101166922B1 (en) Method of manufacturing light emitting diode
EP2262011A2 (en) Light emitting device and manufacturing method for same
CN100483612C (en) Method of fabricating vertical structure compound semiconductor devices
KR100969126B1 (en) Light emitting device
EP1730790B1 (en) Fabrication of semiconductor devices
JP4295669B2 (en) The method of manufacturing a semiconductor device
US20140252396A1 (en) Highly efficient gallium nitride based light emitting diodes via surface roughening

Legal Events

Date Code Title Description
C06 Publication
C10 Request of examination as to substance
C14 Granted