480742 五、發明說明（1) 本發明係一種I I I族氮化物半導 法’尤指一種能改善發光二極體元件 良率及縮短製造工時之切割方式。 習知之 I I I族氮化物（G r 〇 u p I ] 發光元件之切割方式，係於晶片之正 i n g s a w )切割至數微米（# m)深度， 進行劃線（s c r i b e )，以使晶粒劈裂剝 惟，以鑽石刀（d i c i n g s a w )切割 割深度受限於鑽石刀鋒之損耗，無法 割’造成切割之工時增加及無法降低 其次’晶粒剝離後之外型因劃線 或因該晶片之正面無輔助之斷裂有效 法作有效或依劃線（s c r i b e )之線條彔j 不良。 緣是，本發明人乃特潛心的研究 ’以提出一種有別於一般使用鑽石刀 劃線（ρ 〇 i n t s c r i b e )之切割方式。 本發明之一目的，在於提供一 發光元件切割方法，其係於晶片之正 切割道施以放電蝕刻，再於該放電餘 裂（b r e a k )，剝離成晶粒。 本發明之另一目的，在於提供一 體發光元件切割方法，其係於晶片之 其切割道施以放電蝕刻，接著，於該 體發光元件切割方 之晶粒切割剝離之 I N i tr i de )半導體 面以鑽石刀 （die -再於該晶片之背面 離。 方式耗時，且其切 做快速及較深之切 成本； (scribe)深度不足 因子，使得晶粒無 離’造成晶粒外型 並配合學理之運用 (dicing saw)及點 :I族氮化物半導體 面或基板面，沿其 刻面之背面進行劈 I I I族氮化物半導 正面或基板面，沿 放電蝕刻面之背面 480742 五、發明說明（2) 施以鑽石刀（dicing saw)劃線後，再進行劈裂（break) ，以加強其劈裂效果。 本發明之又一目的，在於提供一種以放電蝕刻方式 進行發光二極體元件之晶粒切割剝離之辅助技術，由於 其係以放電蝕刻方式進行晶片之切割線建立，故可針對 較難切割之藍寶石（s a p p h i r e )基板進行餘刻，而達到較 佳之切割效果。 本發明之再一目的，在於提供一種以放電蝕刻方式 進行發光二極體元件之晶粒切割剝離之輔助技術，由於 其有別於一般使用鑽石刀（d i c i n g s a w )及點劃線（ρ 〇 i n t s c r i b e )之切割方式，故能縮短切割工時、改善晶粒剝 離之良率及外觀形狀，以及降低切割所造成之鑽石刀損 耗成本。 為使能對本發明之目的、形狀、構造或裝置特徵及 其功效，作更進一步之認識與瞭解，茲舉實例配合圖式 詳細說明如下： 請參閱第一圖，本發明係一種以放電蝕刻方式進行 發光二極體之晶粒切割剝離之方式，其係於晶片之正面 ，沿其切割道施以放電蝕刻1 0，可依需求蝕刻至基板區 域，然後，於該放電蝕刻面之背面進行劈裂 （break) 20 ’剝離成晶粒。 請參閱第二圖A至第五圖B ，係本發明之實施例圖 ，其係在一未經切割前之晶片7正面上，於其沿切割道 施以放電蝕刻，該放電蝕刻方式係以金屬線2施以適當480742 V. Description of the invention (1) The present invention is an I I I group nitride semiconductor method, particularly a cutting method that can improve the yield of light emitting diode elements and shorten the manufacturing man-hours. The conventional cutting method of Group III nitride (G r 〇up I) light-emitting element is based on the positive ingsaw of the wafer and cut to a depth of several micrometers (# m), and then scribe to make the crystals split and peel. However, the cutting depth of a diamond knife (dicingsaw) is limited by the loss of the diamond blade. Failure to cut can cause an increase in cutting man-hours and cannot be reduced. The assisted fracture effective method is effective or according to the scribe line 彔 j bad. The reason is that the inventor's intensive research ′ proposes a cutting method different from the general use of a diamond knife for scribing (ρo i n t s c r i b e). It is an object of the present invention to provide a method for cutting a light-emitting element, which is performed by performing discharge etching on a positive dicing path of a wafer, and then performing discharge cracking (b r e a k) to peel off the crystal grains. Another object of the present invention is to provide a method for cutting an integrated light-emitting element, which is performed by performing discharge etching on a dicing path of a wafer, and then cutting and peeling the IN i tr i de semiconductor of the bulk light-emitting element. The surface is cut with a diamond knife (die-again on the back of the wafer. The method is time-consuming, and it cuts quickly and at a deeper cost; (scribe) insufficient depth factor, so that the grains are not separated, causing the grain shape Cooperate with the dicing saw and points of science: Group I nitride semiconductor surface or substrate surface, split the group III nitride semiconductor semiconducting front surface or substrate surface along the back of its facet, and follow the back of the discharge etching surface 480742. Description of the invention (2) After dicing with a dicing saw, break is performed to enhance the cleavage effect. Another object of the present invention is to provide a light-emitting diode using a discharge etching method. The auxiliary technology of die cutting and peeling of bulk components, because it is to establish the cutting line of the wafer by discharge etching, so it can be used for the sapphire substrate that is difficult to cut. A better cutting effect is achieved. Another object of the present invention is to provide an auxiliary technology for cutting and peeling of light-emitting diode elements by means of discharge etching, because it is different from the general use of dicingsaw and dots. The cutting method of the scribe (ρ 〇intscribe) can shorten the cutting man-hour, improve the yield and appearance of the chip peeling, and reduce the diamond knife loss cost caused by cutting. In order to enable the purpose, shape, Structure or device features and their effects, for further understanding and understanding, examples are described in detail below with reference to the drawings: Please refer to the first figure, the present invention is a type of light-emitting diode chip cutting and peeling by discharge etching In the method, it is on the front side of the wafer, and discharge etch 10 is applied along its dicing path. It can be etched to the substrate area as required, and then, the back of the discharge etched surface is broken 20 'and peeled into grains. Please refer to the second diagram A to the fifth diagram B, which are the embodiment diagrams of the present invention, which are on the front side of a wafer 7 before being diced. A discharge etch is applied along the cutting path, and the discharge etch is performed by using a metal wire 2 as appropriate.
480742 五、發明說明（3) 電流，並輔助以適當之蝕刻溶液，於晶片7表面進行線 狀之蝕刻，如第三圖A、B ，適當控制金屬線2自晶片 7表面至基板6内部之距離，以控制其蝕刻深度，並陸 續完成於垂直方向之蝕刻，如第四圖A、B ，然後，於 水平方向之切割道施以放電蝕刻，並陸續完成，如第五 圖A、B ，俟完成正面之放電蝕刻製程，即逕行於晶片 7背面進行劈裂（b r e a k)剝離成晶粒。 該晶片7上佈設有多數晶粒3 ，該等晶粒3之間係 保持適當間距，各晶粒3上分別形成一 P電極4及一 N 電極5 。 請參閱第六圖，本發明亦可於上述完成正面之放電 蝕刻1 0製程後，於該放電蝕刻面之背面再施以鑽石刀劃 線 （scribe)30，再進行劈裂（break)40，以加強其劈裂 之效果。 另，本發明之放電蝕刻面亦可為該晶片7之基板（ subtrate)6 面。 此外，本發明之晶片亦可為尚未進行製程之磊晶片 ，俟完成晶片正面之切割道放電蝕刻後，再進行下一步 製程。 綜上述，透過本發明之放電蝕刻方式，具如下述之 特點： 1 ).可縮短切割工時。 2) .降低切割所造成之鑽石刀損耗成本。 3) .改善晶粒剝離之良率及外觀形狀。480742 V. Description of the invention (3) Electric current and assisted with a suitable etching solution to perform linear etching on the surface of the wafer 7, such as the third picture A, B, appropriately control the metal wire 2 from the surface of the wafer 7 to the inside of the substrate 6. Distance, to control its etching depth, and finish the etching in the vertical direction, such as the fourth figure A, B, and then apply the discharge etching on the horizontal cutting path, and finish successively, as in the fifth figure A, B,俟 Complete the discharge etching process on the front side, that is, the wafer 7 is broken along the back side of the wafer 7 to be peeled off into crystal grains. The wafer 7 is provided with a plurality of crystal grains 3, and the crystal grains 3 are maintained at an appropriate distance. A P electrode 4 and an N electrode 5 are formed on each crystal grain 3, respectively. Referring to the sixth figure, the present invention can also apply a diamond knife scribe 30 to the back of the discharge etched surface after the above-mentioned discharge etch 10 process, and then perform a break 40. To enhance its split effect. In addition, the discharge etching surface of the present invention may also be a subtrate 6 surface of the wafer 7. In addition, the wafer of the present invention may also be a wafer that has not yet been processed. After the discharge etch of the scribe line on the front side of the wafer is completed, the next process is performed. In summary, the discharge etching method of the present invention has the following characteristics: 1). The cutting man-hour can be shortened. 2) Reduce the cost of diamond knife wear and tear caused by cutting. 3) .Improve the yield and appearance of the chip peeling.
480742 五、發明說明（4) 4 ).可針對較難切割之基板進行蝕刻，達到較佳切 割效果。 故知，本發明可增加產業上利用性，不同於一般使 用鑽石刀（d i c i n g s a w )及點劃線（ρ 〇 i n t s c r i b e )切割方 式，完全符合專利申請要件，故爰依專利法提出申請之 ，請詳查並准予本案，以保障發明者之權益，若鈞局 貴審查委員有任何稽疑，請不吝來函指示。 按，以上所述，僅為本發明的最佳之一具體實施例 ，惟本發明之構造特徵並不侷限於此，任何熟悉該項技 藝者在本發明之領域内，可輕易思及之變化或修飾皆可 被涵蓋在本案之專利範圍。480742 V. Description of the invention (4) 4). Etching can be performed on substrates that are difficult to cut to achieve better cutting effects. It is known that the present invention can increase the industrial applicability, which is different from the general cutting method of diamond knife (dicingsaw) and dot-dash line (ρ 〇intscribe), which fully meets the requirements of patent applications. And to grant the case to protect the rights of the inventor, if there is any suspicion of the reviewer of the Bureau, please write to us. According to the above, it is only one of the best specific embodiments of the present invention, but the structural features of the present invention are not limited to this. Anyone skilled in the art can easily consider the changes in the field of the present invention. Or modifications can be covered by the patent scope of this case.
480742 圖式簡單說明 第一圖係本發明進行放電I虫刻之一流程圖。 第二圖A係本發明未切割前之晶片正面之俯視圖。 第二圖B係本發明未切割前之晶片正面之側視圖。 第三圖A係本發明於晶片之正面沿切割道進行放電 蝕刻之俯視圖。 第三圖B係本發明於晶片之正面沿切割道進行放電 I虫刻之側視圖。 第四圖A係本發明於晶片之正面沿垂直方向之切割 道完成放電蝕刻至基板區域之俯視圖。 第四圖B係本發明於晶片之正面沿垂直方向之切割 道完成放電蝕刻至基板區域之側視圖。 第五圖A係本發明於晶片之正面沿水平方向之切割 道完成放電蝕刻至基板區域之俯視圖。 第五圖B係本發明於晶片之正面沿水平方向之切割 道完成放電钱刻至基板區域之側視圖。 第六圖係本發明進行放電蝕刻之另一流程圖。 圖號及名稱說明 1蟲晶層 2金屬線 3晶粒 4 P電極 5 N電極 6基板 7晶片480742 Brief description of the diagram The first diagram is a flow chart of the present invention for carrying out the discharge worm. The second figure A is a top view of the front side of the wafer before dicing according to the present invention. The second figure B is a side view of the front side of the wafer before dicing according to the present invention. The third figure A is a top view of the present invention performing discharge etching along the scribe line on the front side of the wafer. The third figure B is a side view of the present invention where the discharge is performed along the scribe line on the front side of the wafer. The fourth figure A is a top view of the present invention in which a vertical scribe line on the front side of the wafer is used to complete the discharge etching to the substrate area. The fourth figure B is a side view of the present invention that completes the discharge etching on the front side of the wafer in a vertical direction to the substrate area. The fifth figure A is a plan view of the present invention in which the cutting etch on the front surface of the wafer along the horizontal direction is completed and the etching is performed to the substrate area. The fifth figure B is a side view of the present invention in which the discharge path is engraved on the front surface of the wafer in a horizontal direction to the substrate area. The sixth diagram is another flowchart of the discharge etching performed by the present invention. Description of drawing number and name 1 Worm crystal layer 2 Metal wire 3 Grain 4 P electrode 5 N electrode 6 Substrate 7 Wafer
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