CN104319319A - Grinding and cutting method of LED chip - Google Patents
Grinding and cutting method of LED chip Download PDFInfo
- Publication number
- CN104319319A CN104319319A CN201410596792.3A CN201410596792A CN104319319A CN 104319319 A CN104319319 A CN 104319319A CN 201410596792 A CN201410596792 A CN 201410596792A CN 104319319 A CN104319319 A CN 104319319A
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- led chip
- sapphire substrate
- channel
- cutting
- ablation
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- 238000005520 cutting process Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000000227 grinding Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 50
- 239000010980 sapphire Substances 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 238000002679 ablation Methods 0.000 claims abstract description 26
- 238000000608 laser ablation Methods 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 238000005498 polishing Methods 0.000 claims description 13
- 230000002265 prevention Effects 0.000 claims description 8
- 239000004744 fabric Substances 0.000 claims description 7
- 208000037656 Respiratory Sounds Diseases 0.000 claims description 5
- 230000008569 process Effects 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000005336 cracking Methods 0.000 abstract 4
- 230000035882 stress Effects 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 8
- 230000006378 damage Effects 0.000 description 5
- 239000012634 fragment Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a grinding and cutting method of an LED chip. The method comprises the steps that firstly, a semiconductor device with a sapphire substrate is waxed, grinded and polished, laser ablation is conducted on the inner portion of the sapphire substrate to obtain a graphical ablation channel, and then wax removal cleaning, cutting and piece cracking are conducted on the semiconductor device. Due to the fact that the crystal structure of the sapphire substrate is damaged after ablation, stress can be buffered or released to a corresponding point in the processes of wax removal and cleaning, and due to the fact that piece cracking is conducted along a cutting channel, losses caused to the chip by piece cracking are reduced to the maximum extent. Compared with the prior art, the grinding and cutting method can effectively reduce grinding piece cracking rate, improve the product yield and improve cutting precision and cutting efficiency.
Description
Technical field
The present invention relates to the technical field of LED chip, particularly a kind of LED chip grind blanking method.
Background technology
LED(Light Emitting Diode), light-emitting diode, abbreviation LED is a kind of can be the solid-state semiconductor device of visible ray by electric energy conversion.As new and effective solid light source, semiconductor lighting has the remarkable advantages such as life-span length, energy-saving and environmental protection, safety, extensive use and illumination, display, signal lamp field.
LED backing material generally has two kinds, Sapphire Substrate, carborundum, and wherein Sapphire Substrate is most widely used, because its processing method and processing cost have no small advantage.Other such as GaN, Si, ZnO substrates are also in development, also have a segment distance from industrialization.Sapphire has good thermal characteristic, fabulous electrical characteristic and dielectric property, and stable chemical nature, anticorrosive, Mohs' hardness reaches 9 grades, is only second to diamond.But general sapphire thickness is comparatively large, sliver difficulty, and thicker sapphire weak heat-dissipating, therefore need to carry out thinning to it in preparation technology.
The Sapphire Substrate processing mode of current industrialization is mainly grinding and polishing, and produce a large amount of thermal stress and mechanical stress in process of lapping, part Stress Release is accomplished in polishing.But in lower wax process, residual stress and the internal stress produced due to substrate and extension lattice mismatch, make Sapphire Substrate warpage, even fragmentation, affect rate of finished products.Especially along with substrate is to large scale future development, grinding fragment rate becomes large problem especially.
To block up effect to solve electric current, prior art widely uses the SiO of poor adhesion
2as current barrier layer, utilize current barrier layer insulation characterisitic, impel electric current to spread to transparency conducting layer, after transparency conducting layer, uniform current is injected in p-type semiconductor layer.But current barrier layer can not solve metal electrode shading extinction problem, and metal electrode and SiO
2adhesiveness is poor, easily occurs that electrode drops situation, and therefore this technology still needs to improve.
Summary of the invention
The shortcoming of prior art in view of the above, what the object of the present invention is to provide a kind of LED chip grinds blanking method, to reduce fragment rate, increases product yield.
For achieving the above object and other relevant objects, what the invention provides a kind of LED chip grinds blanking method, first the semiconductor device with Sapphire Substrate waxed, grind, polishing, then obtain patterned ablation channel in Sapphire Substrate inside by laser ablation, more lower wax, cleaning, cutting, sliver are carried out to described semiconductor device.
LED chip provided by the present invention grind blanking method, it is characterized in that: comprise the steps:
(1) a kind of semiconductor device with Sapphire Substrate is provided;
(2) described semiconductor device waxed, grind, polishing;
(3) patterned ablation channel is obtained in the Sapphire Substrate inside of described semiconductor device by laser ablation;
(4) lower wax, cleaning, cutting, sliver are carried out to described semiconductor device.
As the preferred version grinding blanking method of LED chip of the present invention, described laser ablation adopts the method for laser stealth cutting.
As the preferred version grinding blanking method of LED chip of the present invention, described semiconductor device grows on a sapphire substrate epitaxial loayer, and epitaxial loayer has patterned Cutting Road; Preferably, described Cutting Road is the fenestral fabric be made up of longitudinal straight cuts road and horizontal straight cuts road; As further preferably, described ablation channel is the fenestral fabric be made up of longitudinal beeline channel and horizontal beeline channel, and every bar beeline channel and in epitaxial loayer Cutting Road are corresponding and be positioned at immediately below this Cutting Road; As preferred further, the width of described beeline channel is 3 ~ 5um, is highly 5um ~ 20um, and the spacing of two row beeline channels arranged in parallel is at 300um ~ 5cm.
As the preferred version grinding blanking method of LED chip of the present invention, described ablation channel is the fenestral fabric be made up of longitudinal beeline channel and horizontal beeline channel.
As the preferred version grinding blanking method of LED chip of the present invention, to the Sapphire Substrate occurring crackle during grinding and polishing, with through-wall crack, Crack prevention extends in the position of adjustment ablation channel.
As the preferred version grinding blanking method of LED chip of the present invention, described ablation channel and described Sapphire Substrate lower surface distance are 10um ~ 60um.
As mentioned above, what the invention provides a kind of LED chip grinds blanking method, first COW sheet waxed, grind, polishing, then Sapphire Substrate inside obtain patterned ablation channel by laser ablation technology, lower wax, cleaning, cutting, sliver are being carried out to described semiconductor device.
The present invention has following beneficial effect: because Sapphire Substrate crystal structure after ablation is destroyed, when therefore the Sapphire Substrate back side is by STRESS VARIATION, to the effect of Sapphire Substrate front without mutual power.Reduce Sapphire Substrate stress to a great extent and the possibility of deformation occurs.Meanwhile, instant stress is excessive, COW sliver finally also will only along ablation place (being positioned at below Cutting Road) at Cutting Road sliver, do not damage chip, avoid the generation that overall sliver causes chip large area to be scrapped.Have partial crack after ground for another fruit, directly can utilize laser ablation, directly be split by COW sheet, Crack prevention extends, and reduces slight crack to the destruction of chip.
The present invention effectively can reduce fragment rate, improving product yield, simultaneously add stress that in LED chip manufacturing process, process substrate produces and effectively solve beyond the fragmentation problem brought due to crackle discharging better compared with prior art, the cutting mode that this ablation channel is mutually corresponding with the Cutting Road of epitaxial loayer, can also improve cutting accuracy compared with prior art and promote the operating efficiency of cutting.
Accompanying drawing explanation
Fig. 1 is shown as to be groundly in the present invention has Sapphire Substrate semiconductor device structure schematic diagram.
Fig. 2 is shown as in the present invention and carries out the structural representation after laser stealth cutting to Sapphire Substrate.
Fig. 3 is shown as the position view in the present invention, Sapphire Substrate being carried out to laser stealth cutting.
Fig. 4 is shown as after COW sheet in the present invention cracks after grinding and polishing and carries out the stealthy position view cut of laser to Sapphire Substrate.
In figure, 101-Sapphire Substrate; 102-semiconductor device; 103-beeline channel; 104-gulde edge; 105-crackle.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further detailed explanation, it should be noted, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only show the assembly relevant with the present invention in diagram but not draw according to component count, shape and size that reality is implemented, it is actual when implementing, and the form of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout form also may be more complicated.
Embodiment: as shown in Fig. 1 ~ Fig. 4, what the present embodiment provided a kind of LED chip grinds blanking method, first COW sheet waxed, grind, polishing, then form ablation channel in Sapphire Substrate inside by laser ablation technology and Sapphire Substrate 101 inside, more lower wax, cleaning, cutting, sliver are carried out to described semiconductor device.
Particularly, comprise the following steps:
As shown in Figure 1, first carry out step (1), a kind of semiconductor device 102 with Sapphire Substrate 101 is provided;
In the present embodiment, described in provide one to have a Sapphire Substrate 101 semiconductor device 102, described semiconductor device 102 can not only be limited to light-emitting diode and laser diode.In a concrete implementation process, described light-emitting diode is GaN base light-emitting diode, and quantity is multiple, and each light-emitting diode comprises N-GaN layer, InGaN quantum well layer, P-type layer, transparency conducting layer ITO and P electrode and N electrode.Certainly, in other examples, described light-emitting diode can be also GaP based light-emitting diode etc., and all semiconductor device 102 that can make in Sapphire Substrate 101 all should belong in the practical range of the present embodiment.
Then carry out that step (2) is waxed to described semiconductor device 102, ground, polishing;
As shown in Fig. 2 ~ Fig. 3, then step (3) is carried out, patterned ablation channel is obtained by laser ablation technology in the Sapphire Substrate inside of described semiconductor device 102, in the present embodiment, this ablation channel is the fenestral fabric be made up of the beeline channel 103 of vertical and horizontal, every bar beeline channel 103 and in epitaxial loayer Cutting Road are corresponding and be positioned at immediately below this Cutting Road, even sliver, also can along Cutting Road sliver, Crack prevention passes through chip, reduce the damage to chip, increase product yield;
In the present embodiment, described laser ablation technology is the stealthy cutting technique of laser.Laser stealth technique described herein is by controlling generating laser, send the laser pulse of certain power, wavelength and focal length to described Sapphire Substrate 101 by specific frequency, form beeline channel 103 with the predeterminated position in described Sapphire Substrate 101, described beeline channel 103 is generally the lax cavity of material structure or cavity.
Because the Cutting Road of semiconductor device 102 is usually along the perpendicular or parallel direction in Sapphire Substrate gulde edge 104, therefore parallel or vertical Sapphire Substrate 101 gulde edge 104 is answered in the ablation direction of figure, and is positioned at immediately below semiconductor device 102 Cutting Road.Therefore, in the present embodiment, described beeline channel 103 is arranged in a linear, and orientation is parallel or vertical with the gulde edge 104 of described Sapphire Substrate 101.The cutting mode that this ablation channel is mutually corresponding with the Cutting Road of epitaxial loayer, can significantly improve cutting accuracy compared with prior art and promote the operating efficiency of cutting.
In the present embodiment, described beeline channel 103 is the figure of column figure or approximate column, and the spacing of two row beeline channels 103 wherein arranged in parallel is 300um ~ 5cm.Described beeline channel 103 is 10um ~ 60um with described Sapphire Substrate 101 lower surface distance.The width of described beeline channel 103 is 3 ~ 5um, is highly 5um ~ 20um.
Certainly, in other examples, above parameter can change within the specific limits, as described in beeline channel 103 with as described in the distance of Sapphire Substrate 101 lower surface can exceed 10 ~ 60um; The width of described beeline channel 103 can exceed 3 ~ 5um scope, highly can exceed 5um ~ 20um scope etc.
As shown in Figure 4, when crackle appears in grinding and polishing, spacing arranged in parallel makes the appropriate adjustments, as described in ablation channel 103 cut by Fig. 4 mode, Crack prevention 105 extends, also can Crack prevention place skew cause cutting skew Cutting Road.
Finally carry out step (4), lower wax, cleaning, cutting, sliver are carried out to described semiconductor device 102.
In sum, what the invention provides a kind of LED chip grinds blanking method, first COW sheet waxed, grind, polishing, then Sapphire Substrate inside obtain patterned ablation channel by laser ablation technology, lower wax, cleaning, cutting, sliver are being carried out to described semiconductor device.The present invention has following beneficial effect: because Sapphire Substrate crystal structure after ablation is destroyed, when therefore the Sapphire Substrate back side is by STRESS VARIATION, to the effect of Sapphire Substrate front without mutual power.Reduce Sapphire Substrate stress to a great extent and the possibility of deformation occurs.Meanwhile, if stress is excessive, COW sliver also along ablation place (being positioned at below Cutting Road) at Cutting Road sliver, will not damage chip.Have partial crack after ground for another fruit, directly can utilize laser ablation, directly be split by COW sheet, Crack prevention extends, and reduces slight crack to the destruction of chip, also the skew of Crack prevention place can cause cutting skew Cutting Road.The present invention effectively can reduce fragment rate, improving product yield.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
What describe in above-described embodiment and specification just illustrates principle of the present invention and most preferred embodiment; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.
Claims (10)
1. LED chip grind a blanking method, it is characterized in that: comprise the steps:
(1) a kind of semiconductor device with Sapphire Substrate is provided;
(2) described semiconductor device waxed, grind, polishing;
(3) patterned ablation channel is obtained in the Sapphire Substrate inside of described semiconductor device by laser ablation;
(4) lower wax, cleaning, cutting, sliver are carried out to described semiconductor device.
2. LED chip according to claim 1 grind blanking method, it is characterized in that: described semiconductor device grows on a sapphire substrate epitaxial loayer, epitaxial loayer has patterned Cutting Road.
3. LED chip according to claim 2 grind blanking method, it is characterized in that: described Cutting Road is the fenestral fabric be made up of longitudinal straight cuts road and horizontal straight cuts road.
4. LED chip according to claim 3 grind blanking method, it is characterized in that: described ablation channel is the fenestral fabric be made up of longitudinal beeline channel and horizontal beeline channel, every bar beeline channel and in epitaxial loayer Cutting Road are corresponding and be positioned at immediately below this Cutting Road.
5. LED chip according to claim 1 grind blanking method, it is characterized in that: described ablation channel is the fenestral fabric be made up of longitudinal beeline channel and horizontal beeline channel.
6. the LED chip according to claim 1 or 2 or 5 grind blanking method, it is characterized in that: to the Sapphire Substrate occurring crackle during grinding and polishing, adjustment ablation channel position with through-wall crack Crack prevention extend.
7. described LED chip according to claim 1 grind blanking method, it is characterized in that: described laser ablation is laser stealth cutting.
8. the LED chip according to claim 1 or 4 or 5 grind blanking method, it is characterized in that: described ablation channel and described Sapphire Substrate lower surface distance are for 10um ~ 60um.
9. the LED chip according to claim 4 or 5 grind blanking method, it is characterized in that: the width of described beeline channel is 3 ~ 5um, is highly 5um ~ 20um.
10. the LED chip described according to claim 4 or 5 grind blanking method, it is characterized in that: the spacing of two row beeline channels arranged in parallel is 300um ~ 5cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410596792.3A CN104319319A (en) | 2014-10-31 | 2014-10-31 | Grinding and cutting method of LED chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410596792.3A CN104319319A (en) | 2014-10-31 | 2014-10-31 | Grinding and cutting method of LED chip |
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| CN104319319A true CN104319319A (en) | 2015-01-28 |
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| CN201410596792.3A Pending CN104319319A (en) | 2014-10-31 | 2014-10-31 | Grinding and cutting method of LED chip |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914267A (en) * | 2016-05-27 | 2016-08-31 | 山东浪潮华光光电子股份有限公司 | Method of preparing sapphire substrate LED chip through laser cutting |
| CN106124548A (en) * | 2016-06-23 | 2016-11-16 | 中山德华芯片技术有限公司 | A kind of the hidden of composite construction SiC substrate cuts experimental test procedures |
| CN111725360A (en) * | 2019-03-22 | 2020-09-29 | 安徽三安光电有限公司 | Composite substrate, preparation method thereof and method for preparing light-emitting element by using composite substrate |
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| CN103213061A (en) * | 2012-01-18 | 2013-07-24 | 张卫兴 | Processing technic of sapphire substrate slice special for patterned substrate |
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2014
- 2014-10-31 CN CN201410596792.3A patent/CN104319319A/en active Pending
Patent Citations (5)
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| CN101241855A (en) * | 2007-01-23 | 2008-08-13 | 住友电气工业株式会社 | III-V compound semiconductor substrate manufacturing method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914267A (en) * | 2016-05-27 | 2016-08-31 | 山东浪潮华光光电子股份有限公司 | Method of preparing sapphire substrate LED chip through laser cutting |
| CN106124548A (en) * | 2016-06-23 | 2016-11-16 | 中山德华芯片技术有限公司 | A kind of the hidden of composite construction SiC substrate cuts experimental test procedures |
| CN106124548B (en) * | 2016-06-23 | 2019-01-11 | 中山德华芯片技术有限公司 | A kind of the hidden of composite construction SiC substrate cuts experimental test procedures |
| CN111725360A (en) * | 2019-03-22 | 2020-09-29 | 安徽三安光电有限公司 | Composite substrate, preparation method thereof and method for preparing light-emitting element by using composite substrate |
| CN111725360B (en) * | 2019-03-22 | 2023-04-07 | 安徽三安光电有限公司 | Composite substrate, preparation method thereof and method for preparing light-emitting element by using composite substrate |
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Application publication date: 20150128 |