CN104091815A - Light-emitting component - Google Patents
Light-emitting component Download PDFInfo
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- CN104091815A CN104091815A CN201410312050.3A CN201410312050A CN104091815A CN 104091815 A CN104091815 A CN 104091815A CN 201410312050 A CN201410312050 A CN 201410312050A CN 104091815 A CN104091815 A CN 104091815A
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- light
- emitting diode
- backlight unit
- diode chip
- emitting component
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Abstract
The invention provides a light-emitting component. The light-emitting component comprises a light-emitting diode chip, a substrate and a joint layer. The light-emitting diode chip comprises a plurality of light-emitting diode units, a plurality of electrodes and at least one electrical connecting layer. The light-emitting diode units are electrically connected through the electrical connecting layers and jointed with the substrate through the joint layer. A plurality of passageways are arranged in the substrate, and a plurality of external electrodes are arranged on the substrate to supply electric power required by light emission of the light-emitting component.
Description
The application is for being to be that October 12, application number in 2010 are the divisional application of 201010506242.X, the denomination of invention patent application that is " light-emitting component " the applying date.
Technical field
The present invention relates to a kind of light-emitting component and manufacture method thereof, more specifically, relate to a kind of light-emitting component that utilizes outer electrode improving extraction efficiency.
Background technology
In recent years, due to the progress of extension and technology, make light-emitting diode (light emitting diode is called for short LED) become one of solid-state illumination light source having potentiality.Based on the restriction of physical mechanism, LED only can be with DC powered, therefore, and in any Lighting Design using LED as light source, all need and the collocation of the electronic component such as rectification and step-down, be converted to the spendable DC power supply of LED with the alternating current that Utilities Electric Co. is directly provided.But increase the electronic components such as rectification and step-down, and except causing the increase of illumination cost, reliability and useful life when low AC/DC conversion efficiency, the volume bigger than normal etc. of the electronic components such as rectification and step-down all can affect LED and be used in normal lighting application.
Alternating-current light emitting diode (ACLED) element do not need the electronic components such as additional rectification and step-down just can direct control in AC power, the following potential major product that becomes fixed point solid-state illumination.The factors such as operation wattage, chip size, efficiency and the Yield lmproved that ACLED is applicable have very important impact for practicality and the popularization in this element future.
ACLED mainly contains two kinds of structures at present: one is for do reverse series-parallel design on circuit, and another for doing the design of Hui Shi electric bridge (bridge circuit) on circuit.Reverse series-parallel design in when operation only has 50% LED tube core to be lit, and the design of Hui Shi electric bridge (bridge circuit) can be lighted the tube core of half in bridge architecture and the tube core that bridge circuit is electrically connected within the same time.In comparison, the design of Hui Shi electric bridge (bridge circuit) can increase light-emitting area, is conducive to ACLED improved efficiency.
But in ACLED structure, no matter reverse series-parallel design or the design of Hui Shi electric bridge (bridge circuit) all needs the electric connection layer between LED tube core.As shown in Figure 1, be known AC LED electrode configuration mode schematic diagram, wherein electrode 32 is the electric connection layer in ACLED, and 1a～1k, 1m, 1n, 1p, 1q, the light-emitting zone that 1r etc. are not covered by electrode for ACLED tube core.Can find as shown in Figure 1, the electric connection layer in ACLED between each tube core has covered the light-emitting zone of tube core significant proportion, and this electric connection structure also causes regional shading to cause luminous efficiency significantly to reduce simultaneously.
Summary of the invention
The present invention proposes to have light-emitting diode and the manufacture method thereof of low light-shading effect.
The present invention proposes a kind of light-emitting component, it comprises light-emitting diode chip for backlight unit, substrate and knitting layer, wherein light-emitting diode chip for backlight unit comprises multiple light emitting diodes, multiple electrode and at least one electric connection layer, between light emitting diode, be electrically connected to each other through being electrically connected layer, and engage with substrate by knitting layer; In substrate, there are multiple passages, on it, there are multiple outer electrodes with the luminous required electric power of supply light-emitting component.
The present invention also proposes a kind of light-emitting component, comprises light-emitting diode chip for backlight unit, inferior carrier (sub-mount) and at least one conduction material (solder).Inferior carrier can have at least one circuit, and conduction material is positioned on time carrier, by conducting electricity material by light-emitting diode chip for backlight unit bonding and/or being fixed on time carrier, and light-emitting diode chip for backlight unit and time carrier formation is electrically connected.Wherein, inferior carrier can be that lead frame (lead frame) or large scale are inlayed substrate (mounting substrate), to facilitate the circuit of light emitting diode construction to plan and to improve its radiating effect.
The present invention separately proposes a kind of light-emitting component, sees through the arrangement of electric connection structure, is electrically connected the each light emitting diode in light-emitting diode chip for backlight unit, so that be one another in series between each light emitting diode, parallel connection or connection in series-parallel connect; Between each light emitting diode, also can be electrically connected as Hui Shi electric bridge (bridge circuit).In addition, also can between each light emitting diode, insert fluorescent material and/or scattering particles (scattering particle), to increase the luminous efficiency of light-emitting diode, and/or carry out wavelength of light conversion to realize mixed light.
The present invention separately proposes to form the method for light-emitting component.First, on growth substrate, form N-shaped semiconductor layer, active layer and p-type semiconductor layer; Remove portion N-shaped semiconductor layer, active layer and p-type semiconductor layer are to form multiple light emitting diodes; Remove active layer and the p-type semiconductor layer of part in each light emitting diode, to expose the part upper surface of N-shaped semiconductor layer; The surface exposing in N-shaped semiconductor layer forms N-shaped electrode, forms p-type electrode on the surface of p-type semiconductor layer; In between light emitting diode, form insulation system; In between light emitting diode, form electric connection structure; Coating insulating material has a side of electric connection structure in light-emitting diode chip for backlight unit; Form reflector in light-emitting diode chip for backlight unit with respect to the opposite side of insulation system; Opposite side in reflector with respect to light-emitting diode chip for backlight unit forms knitting layer (bonding layer); Utilize knitting layer to engage with permanent substrate; In growth substrate, form multiple passages with the corresponding position of light-emitting diode chip electrode; See through multiple passages and be electrically connected the electrode of light-emitting diode chip for backlight unit to the offside of growth substrate; The part of corresponding multiple passages on the offside of growth substrate, forms respectively multiple outer electrodes of respective leds chip electrode.
Brief description of the drawings
Fig. 1 is known AC LED electrode configuration mode schematic diagram.
Fig. 2 is the schematic diagram of the disclosed light-emitting component of the present invention 100.
Fig. 3 A-3G is the method schematic diagram of the disclosed formation light-emitting component 100 of the present invention.
Fig. 4 is the structural representation of another light-emitting component 200.
Fig. 5 is the structural representation of another light-emitting component 300.
Fig. 6 is the structural representation of another light-emitting component 300 another enforcements.
Fig. 7 A is depicted as the vertical view of another light-emitting component 400.
Fig. 7 B is depicted as the A-A '-A of another light-emitting component 400 " profile.
Description of reference numerals
100: light-emitting component
110: light-emitting diode chip for backlight unit
120: insulating barrier
130: reflector
140: knitting layer
150: permanent substrate
111: growth substrate
112: light emitting diode
112a:n type semiconductor layer
112b: active layer
112c:p type semiconductor layer
113a, 113b: electrode
114: insulation system
115: electric connection structure
116: passage
117: outer electrode
200: light-emitting component
250: permanent substrate
300: light-emitting component
310: inferior carrier
320: conduction material
330: conductive structure
400: light-emitting component
411,412: light emitting diode group
420: electrical contact
B, C, D: node
B ', C ', D ': node
Embodiment
Please as shown in Figure 2, be the schematic diagram of the disclosed light-emitting component 100 of the present invention, light-emitting component 100 comprises light-emitting diode chip for backlight unit 110, insulating barrier 120, reflector 130, knitting layer 140 and permanent substrate 150.
The surface of light-emitting diode chip for backlight unit 110 1 sides has insulating barrier 120, to completely cut off the electrical conduction between light-emitting diode chip for backlight unit 110 and reflector 130, knitting layer (bonding layer) 140 and permanent substrate 150.Insulating barrier 120 has reflector 130 with respect to the opposite side of light-emitting diode chip for backlight unit 110, reflector 130 in order to light reflection that light-emitting diode chip for backlight unit 110 is produced to the same side, to increase the light extraction efficiency (light extraction efficiency) of light-emitting component 100, reflector 130 has knitting layer 140 with respect to the opposite side of light-emitting diode chip for backlight unit 110, and knitting layer 140 engages permanent substrate 150 and light-emitting diode chip for backlight unit 110.In the present embodiment, permanent substrate 150 can be for example silicon substrate.
Light-emitting diode chip for backlight unit 110 comprises growth substrate 111, multiple light emitting diode 112, multiple electrode 113a and 113b, insulation system 114, electric connection structure 115, passage 116 and outer electrode 117.Light emitting diode 112 for example can pass through Metalorganic chemical vapor deposition method (Metal-Organic Chemical Vapor Deposition) epitaxial growth on growth substrate 111.In the present embodiment, light emitting diode 112 at least comprises N-shaped semiconductor layer 112a, active layer (active layer) 112b and p-type semiconductor layer 112c, sequentially grow up on growth substrate 111, wherein active layer 112b can comprise multiple quantum trap structure (multiple quantum well), between N-shaped semiconductor layer 112a and growth substrate, still can utilize ion doping or other growth patterns to form resilient coating (buffer layer), p-type semiconductor layer 112c is with respect to can further forming electric current dispersion layer on the opposite side of active layer 112b, so that electric current diffuses to active layer 112b more fifty-fifty.Electrode 113a is N-shaped electrode, be positioned on N-shaped semiconductor layer 112a, electrode 113b is p-type electrode, be positioned at p-type semiconductor layer 112c upper, electrode 113a and electrode 113b preferably need to form respectively ohmic contact (ohmic contact) with N-shaped semiconductor layer 112a and p-type semiconductor layer 112c.112 of light emitting diodes have insulation system 114, and in the present embodiment, the width of insulation system 114 need be enough to 112 non-conduct by electric connection structure 115 electrical of light emitting diode of isolated insulation system 114 both sides, forms effectively insulation.See through insulation system 114; the required static of light emitting diode 112 and short-circuit protection are provided; make the side of light emitting diode 112, especially active layer (active layer) 112b is not extremely electrically conducted situation affects or destroys.In the present embodiment, (Locally) planarization that insulation system 114 can be reached locality by enforcement spin-on glasses method (Spin-on glass).
One side of insulation system 114 has electric connection structure 115, to be electrically connected the N-shaped electrode 113a of light emitting diode and the p-type electrode 113b of another light emitting diode in light emitting diode 112, repeat this connected mode, thus with the each light emitting diode 112 in serial or parallel connection mode connecting luminous diode chip 110, the light-emitting diode chip for backlight unit 110 of be one another in series to form 112 of each light emitting diodes, in parallel, connection in series-parallel connects or oppositely connection in series-parallel connects.In addition, 112 of each light emitting diodes can electrically connect (electrically connecting in series) become have multiple light emitting diodes single-chip (Multiple-dies Chip, MC); Cooperating voltage, with single single chip architecture or combining multiple single chip architectures can be applicable in DC power supply or the AC power after over commutation.Also can in single single-chip, be electrically connected the electrical layout of multiple light emitting diodes 112 for comprising Hui Shi electric bridge (bridge circuit), to be applied in AC power.See through electric connection structure 115,112 of each light emitting diodes are electrically connected to each other, in an embodiment, above-mentioned electrically connect situation makes light-emitting diode chip for backlight unit 110 can supply each light emitting diode 112 required electrical power for operation by two electrodes (being the N-shaped electrode of light emitting diode 112 and the p-type electrode of another light emitting diode 112 in the light emitting diode 112 after electric connection).
In the present embodiment, growth substrate 111 is sapphire (Sapphire) substrate, and the preferred thickness after grinding is about 10 μ m.Growth substrate 111 has the multiple passages 116 that connect and/or penetrate growth substrate 111, wherein connects and refers to passing through of orthoscopic, refers to passing through of non-homogeneous or non-rectilinear formula and penetrate, but still connects growth substrate 111.Passage 116 is to form with the corresponding position of multiple outer electrodes 117 in growth substrate 111, in passage 116, there is conductive material, to be electrically connected outer electrode 117 and light emitting diode 112, outer electrode 117 is positioned on growth substrate 111, be electrically connected with the electrode of light-emitting diode chip for backlight unit 110, make light-emitting diode chip for backlight unit 110 obtain power supply supply by the electric conducting material in outer electrode 117 and passage 116.It should be noted that, the electric connection that light emitting diode is 112 can directly form by electric connection structure 115, each light emitting diode 112 need not form separately electrode again, only need on the position of corresponding outer electrode 117, form electrode so that electric connection to be provided, therefore can reduce production process and increase the reliability of light-emitting diode chip for backlight unit.
Asking for an interview shown in Fig. 3 A-3G, is the method schematic diagram of the disclosed formation light-emitting component 100 of the present invention.First,, in Fig. 3 A, on growth substrate 111, sequentially form N-shaped semiconductor layer 112a, active layer 112b and p-type semiconductor layer 112c; Then, remove portion N-shaped semiconductor layer 112a, active layer 112b and p-type semiconductor layer 112c, form and have to each other multiple to form multiple epitaxial structures that insulation system 114 completely cuts off, in the present embodiment, insulation system 114 reaches the growth substrate of N-shaped semiconductor layer 112a bottom deeply; , among Fig. 3 Bs, remove active layer 112b and the p-type semiconductor layer 112c of each epitaxial structure in part, make outside the upper surface of part N-shaped semiconductor layer 112a is exposed to thereafter; In Fig. 3 C, the surface exposing at N-shaped semiconductor layer 112a forms N-shaped electrode 113a, forms p-type electrode 113b, to form light emitting diode 112 on the surface of p-type semiconductor layer 112c; In Fig. 3 D, form insulation system 114 112 of light emitting diodes, insulation system 114 can only form along the side of light emitting diode 112, or further covers the surface of p-type semiconductor layer 112c; Then form electric connection structure 115, so that each light emitting diode 112 is electrically connected to each other, the connected mode of electric connection structure 115 is to be electrically connected the N-shaped electrode 113a of light emitting diode 112 and the p-type electrode 113b of another light emitting diode 112.Or do not form electrode on each light emitting diode 112, directly be electrically connected each light emitting diode 112 with electric connection structure 115, be electrically connected the each light emitting diode 112 in light-emitting diode chip for backlight unit 110 in serial or parallel connection mode, be one another in series to form 112 of each light emitting diodes, the light-emitting diode chip for backlight unit 110 that parallel connection or connection in series-parallel connect, 112 of each light emitting diodes can also be connected becomes single-chip (the Multiple-dies Chip with multiple light emitting diodes, MC), cooperating voltage, with single single chip architecture or combine multiple single chip architectures to be applied in DC power supply or the AC power after over commutation.Also can in single chip architecture, be electrically connected the state of each light emitting diode 112 for comprising Hui Shi electric bridge (bridge circuit), to be applied in AC power.Electric connection structure 115 is partly or entirely formed on insulation system 114, with by isolated non-conduct by electric connection structure 115 electrical of insulation system 114, forms effectively insulation, to avoid light emitting diode 112 to suffer damage.After the structure that completes light-emitting diode chip for backlight unit 110 through above-mentioned steps, in Fig. 3 E, the side at light-emitting diode chip for backlight unit 110 with electric connection structure 115 is coated with layer of cloth 120; Form reflector 130 in insulating barrier 120 with respect to the opposite side of light-emitting diode chip for backlight unit 110, or formation multilayer has different refractivity and can reflect by the irradiant structure of light-emitting diode chip for backlight unit 110, for example Bragg reflecting layer (Bragg Reflection Layer); Thereafter, opposite side in reflector 130 with respect to insulating barrier 120 forms knitting layer (bonding layer) 140, for example wafer knitting layer (wafer bonding layer) or metallic bond layer (metal bonding layer); In Fig. 3 F, utilize knitting layer 140 to engage with permanent substrate 150, in the present embodiment, be to engage permanent substrate 150 and knitting layer 140 with wafer juncture, but also not as limit, wherein permanent substrate 150 is silicon substrate; Complete after joint, growth substrate 111 is utilized to the method thinnings such as grinding, preferably can be thinned to 10 μ m; In Fig. 3 G, utilize the modes such as etching afterwards, in growth substrate 111, with the corresponding position of multiple electrodes of light-emitting diode chip for backlight unit 110, form the multiple passages 116 that connect/penetrate growth substrate 111; Be used in the mode of inserting conductive material in passage 116, be electrically connected multiple electrodes of light-emitting diode chip for backlight unit 110 to the offside of growth substrate 111; Finally, on the offside of growth substrate 111, the part of respective channel 116, forms respectively multiple outer electrodes 117 of respective leds chip 110 electrodes.
Ask for an interview Fig. 4, for the structural representation of another disclosed light-emitting component 200 of the present invention, in the present embodiment, the element that label is identical with Fig. 2, the feature of narrating in the present embodiment and composition, have the characteristic identical with element in Fig. 2 and occupation mode, wherein permanent substrate 250 is aluminium nitride substrate, passage 116 connects permanent substrate 250, forms outer electrode 117 on the apparent surface at permanent substrate 250 with respect to light-emitting diode chip for backlight unit 110.
Please as shown in Figure 5, for the structural representation of another disclosed light-emitting component 300 of the present invention, in the present embodiment, the element that label is identical with Fig. 2, the feature of narrating and composition, also there is the characteristic identical with element in Fig. 2 and occupation mode in the present embodiment.Light-emitting component 300 comprises light-emitting diode chip for backlight unit 110, inferior carrier (sub-mount) 310 and at least one conduction material 320.Inferior carrier 310 can have at least one circuit, conduction material 320 is positioned on time carrier 310, or be present in respectively on light-emitting diode chip for backlight unit 110 and inferior carrier 310 simultaneously, light-emitting diode chip for backlight unit 110 is bondd and/or be fixed on time carrier 310 and make light-emitting diode chip for backlight unit 110 and time carrier 310 form electric connection by conduction material 320, wherein, electric connection can be connected and form with outer electrode 117 by conducting electricity material 320, light-emitting diode chip for backlight unit 110 can be fixed to one another and complete electric connection by welding procedure (soldering process) or adhesion technique (adhesive process) with time carrier 310.In the time of welding procedure, conduction material 320 can be metal coupling (metal bump), its material can be alloy (alloy), metal (metal) or scolder (solder), when metal coupling is alloy bump, or become under the situation of alloy after welding, the metal coupling being distributed on light-emitting diode chip for backlight unit 110 and inferior carrier 310 can be alloy or is respectively single metal, connect (eutectic soldering) technique by common fusion gold solder and form alloy, also can pass through isotropic conductive adhesive (isotropically conductive adhesive, ICA) form this metal coupling.In adhesion when technique, with anisotropy conducting resinl (the anisotropically conductive adhesive of paste form or form of film; ACA), i.e. anisotropic conductive film (anisotropically conductive film; ACF) etc.Chip is connected with time carrier 310.Under in conjunction with pressure and hot acting in conjunction, complete electrically connect, and make sticker for good and all solidify (cure) and thermally-stabilised.Inferior carrier 310 can be that lead frame (lead frame), large scale are inlayed substrate (mounting substrate) or circuit board (such as PCB circuit board) etc., plans and improves its radiating effect to realize the circuit of light-emitting component 300.In the present embodiment, optionally the growth substrate on light-emitting diode chip for backlight unit 110 111 is removed, and insert or form conductive structure 330 in light-emitting diode chip for backlight unit 110 and 310, inferior carrier, to increase the radiating efficiency of light-emitting component 300.Moreover, can above implement alligatoring (roughing) steps in light-emitting diode chip for backlight unit 110 surfaces after removing growth substrate, make light-emitting diode chip for backlight unit 110 there is coarse surface or alligatoring structure, increase thus the light extraction efficiency of light-emitting component 300.Also can in insulation system 114, add fluorescent material (Phosphor) and scattering particles (scattering particle), the light that wherein the convertible light emitting diode 112 of fluorescent material sends is for different photochromic to carry out photochromic mixed light, the light that in other words, light emitting diode 112 can be sent is converted to another long light of wavelength.For example blue light is transferred to ruddiness and gold-tinted, to form white light output, or other photochromic conversions, be also possible mapping mode.Scattering particles makes to enter and is issued the outside scattering of light in insulation system 114, and to increase the light extraction efficiency of light-emitting diode chip for backlight unit 110, the material of scattering particles can be titanium dioxide (TiO
2) and silicon dioxide (SiO
2) and combination, but also not as limit.Fluorescent material (Phosphor) in above-mentioned insulation system 114 and scattering particles (scattering particle), can add in the lump or separately in insulation system 114, its composition and concentration can be adjusted according to product difference, and one of them and the combination thereof that make to comprise fluorescent material (Phosphor) and scattering particles (scattering particle) in insulation system 114.
In addition, please as shown in Figure 6, light-emitting component 300 also can not removed growth substrate 111, and implements alligatoring (roughing) step in growth substrate 111, make growth substrate 111 there is coarse surface or alligatoring structure, increase thus the light extraction efficiency of light-emitting component 300.Described in Fig. 5, in insulation system 114, also add fluorescent material (Phosphor) and scattering particles (scattering particle), the light wherein sending in the convertible light emitting diode of fluorescent material is for different photochromic to carry out photochromic mixed light, for example blue light is transferred to ruddiness or gold-tinted to form white light output, or other photochromic conversions, be also possible mapping mode.Scattering particles makes to enter and is issued the outside scattering of light in insulation system 114, and to increase the light extraction efficiency of light-emitting diode chip for backlight unit 110, the material of scattering particles can be titanium dioxide (TiO
2) and silicon dioxide (SiO
2) and combination, but also not as limit.Fluorescent material (Phosphor) in above-mentioned insulation system 114 and scattering particles (scattering particle), can add in the lump or separately in insulation system 114, its composition and concentration can be adjusted according to product difference, and one of them and the combination thereof that make to comprise fluorescent material (Phosphor) and scattering particles (scattering particle) in insulation system 114.
Asking for an interview shown in Fig. 7 A and Fig. 7 B, is disclosed another embodiment that sends out element 400 of the present invention, and wherein Fig. 7 A is the vertical view of light emitting diode construction 400, and Fig. 7 B is the A-A '-A of light emitting diode construction 400 " profile.The present embodiment utilizes the electric connection between time carrier 310 and light-emitting diode chip for backlight unit 110, and making light-emitting component 400 have flexible electrical configuration may.In the present embodiment, between inferior carrier 310 and light-emitting diode chip for backlight unit 110, there are at least three electrical contacts 420, wherein the material of electrical contact 420 can be identical or communicate with conduction material 320, in light-emitting diode chip for backlight unit 110, can comprise at least two group light emitting diode groups 411 and 412, wherein light emitting diode group 411 and 412 at least comprises multiple light emitting diodes that are one another in series 112, for instance, light emitting diode group 411 and 412 can bear and be similar to the forward voltage of root mean square (root mean square) value 120 volts (voltage) and 240 volts, or the forward voltage of peak value (peak value) or root-mean-square value approximate 33 volts or 72 volts.Light emitting diode group 411 and 412 can have at least two electrical contacts 420 separately, or light emitting diode group 411 and 412 can share electrical contact 420.Can have separately under the situation of at least two electrical contacts 420 light emitting diode group 411 and 412, light emitting diode group 411 electrical contact 420 is electrically connected to each other with another electrical contact 420 of light emitting diode group 412, to form common node C (common node), the signal of telecommunication or the power supply that on common node C, apply can be transmitted and be applied on light emitting diode group 411 and 412 in the lump, or there is the electrical property feature of other common node structure generations.In addition, another electrical contact 420 except common node C on light emitting diode group 411 is Node B, and on light emitting diode group 412, another electrical contact 420 except common node C is node D.In the present embodiment, inferior carrier 310 utilizes conduction material 320 to be electrically connected with Node B, C, D respectively, the signal of telecommunication that ', C ', D ' (not shown), and to Node B ', C ', D ' apply to form corresponding to the Node B of Node B, C, D on inferior carrier 310 or power supply can be transmitted and be applied to corresponding Node B, C, D.Under this framework, work as Node B ' and D ' be connected power source, and node C ' is not while being electrically connected with external power source, 411 and 412 of light emitting diode groups are the electrical connection state of series connection, and be electrically connected at the utmost point of power supply at C ', and Node B ' and D ' be electrically connected under the situation of another utmost point of power supply, 411 and 412 of light emitting diode groups are electric connection situation in parallel.This kind of framework is under one chip and encapsulating structure, can realize the possibility of 411 and 412 multiple electric connections of light emitting diode group, for instance, in the time that light-emitting component 400 is applied to the electric power system of root-mean-square value at 120 volts, can carry out electric connection in parallel, encapsulation and lead-in wire to light-emitting component 400, make light-emitting component 400 can be applied to root-mean-square value the electric power system of 120 volts.And in the time that light-emitting component 400 is applied to the electric power system of root-mean-square value at 240 volts, can carry out to light-emitting component 400 electric connection of series connection, encapsulation and lead-in wire, make light-emitting component 400 can be applied to root-mean-square value the electric power system of 240 volts.With this, the present embodiment only uses same light-emitting component 400, can be applied under multiple power system architectures, and utilize time carrier as the point being electrically connected with electric power system, the reliability of light-emitting component 400 in application improved, production cost reduces, and allows the price of end product have the space of optimization, and then promotes the possibility of light-emitting diode application.It is worth mentioning that, aforesaid light emitting diode group 411 and 412 is a part for same light-emitting diode chip for backlight unit 110, but can also substitute light emitting diode group 411 and 412 by two light-emitting diode chip for backlight unit 110, and implement the present embodiment under identical invention spirit.
The light-emitting component that the present invention is disclosed, can comprise flip-over type (flip chip) encapsulating structure by substrate-side bright dipping, because flip-chip packaged structure is by the characteristic of substrate-side bright dipping, make its light extraction efficiency not because light-emitting zone crested reduces, therefore the electric conducting material between light emitting diode need not be selected transparent material, also without the problem for dwindling shading-area, or the shape of electric conducting material or technique are carried out special design, therefore can increase light extraction efficiency, reduce costs, and make the selection of electric conducting material unrestricted.
In addition, the light emitting diode construction that the present invention is disclosed, except can known package mode encapsulating, also can under epitaxy technique, operate, encapsulate and adhere to distinct methods separately with general packaging body light emitting diode construction is other and that size difference is very large, that is the disclosed light emitting diode construction of the present invention can operate under same wafer-level, therefore described each interelement can have similar size grades (for example, in the same order of magnitude, or in 10 1 power), thus, not only simplify technique, need not additionally encapsulate light emitting diode construction again, also independent light emitting diode construction disclosed the present invention or several and package carrier can be encapsulated again, the disclosed light emitting diode construction of the present invention makes the encapsulation step such as lead-in wire more simple, therefore make the encapsulation of light-emitting diode be minimized the reliability of cost and increase packaging body.
Above-mentioned all embodiment, the material of wherein said N-shaped semiconductor layer, p-type semiconductor layer and active layer comprises III-V compounds of group, the material of for example gallium nitride series or gallium phosphide series.Described growth substrate is for example for comprising that at least one material is selected from the group that sapphire, carborundum, gallium nitride and aluminium nitride form.Described N-shaped semiconductor layer, p-type semiconductor layer and active layer can be single or multiple lift structure, for example, be superlattice structure.In addition, described light-emitting diode chip for backlight unit of the present invention is not limited to directly engage or be engaged to heat conduction or electrically-conductive backing plate by medium with juncture, and other generation types, for example, grow up and on described growth substrate, also belong to scope of the present invention with pattern of growth.
Described electric current dispersion layer comprises transparent metal oxide, for example, be tin indium oxide (ITO), metal or metal alloy.Described growth substrate is for example for comprising that at least one transparent material or insulating material are selected from the group that sapphire, carborundum, gallium nitride and aluminium nitride form.Described support substrate is for example for comprising that transparent material is selected from the group that gallium phosphide, sapphire, carborundum, gallium nitride and aluminium nitride form; Or for example for comprising that Heat Conduction Material is selected from the group that the metal materials such as diamond, diamond-like-carbon (DLC), zinc oxide, gold, silver, aluminium form.Described on-monocrystalline engages layer and comprises at least one material and be selected from the group that metal oxide, nonmetal oxide, high molecular polymer, metal or metal alloy form.
The cited each embodiment of the present invention is only in order to the present invention to be described, not in order to limit the scope of the invention.Anyone any aobvious and easy to know modification made for the present invention or change neither depart from spirit of the present invention and scope.
Claims (10)
1. light-emitting component, comprising:
Light-emitting diode chip for backlight unit, comprise multiple light emitting diodes and at least one electric connection layer, wherein between the plurality of light emitting diode, be electrically connected to each other through this electric connection layer, wherein each the plurality of light emitting diode has the first semiconductor layer, the second semiconductor layer and active layer;
Multiple outer electrodes;
Multiple passages, see through the plurality of passage and are electrically connected this light-emitting diode chip for backlight unit and the plurality of outer electrode;
Knitting layer; And
Inferior carrier, engages this light-emitting diode chip for backlight unit by this knitting layer with this carrier.
2. light-emitting component as claimed in claim 1, wherein this light-emitting diode chip for backlight unit has a coarse surface with respect to the opposite side of this carrier.
3. light-emitting component as claimed in claim 1, also comprises that a substrate is positioned at the opposite side of light-emitting diode chip for backlight unit with respect to this carrier; Wherein this substrate has a coarse surface with respect to the opposite side of this light-emitting diode chip for backlight unit.
4. light-emitting component as claimed in claim 1, wherein this light-emitting diode chip for backlight unit and this carrier have the size of the same order of magnitude.
5. light-emitting component as claimed in claim 1, wherein has insulation system between the plurality of light emitting diode, and has multiple scattering particless and/or fluorescent substance in this insulation system.
6. light-emitting component as claimed in claim 5, wherein the plurality of light emitting diode sends first visible ray with the first wavelength, it is second visible ray with second wave length that this fluorescent substance in this insulation system is switchable to this first visible ray of small part, wherein this second wave length this first wavelength be large.
7. light-emitting component as claimed in claim 1, wherein the plurality of light emitting diode forms two light emitting diode groups, in the plurality of light emitting diode group, has at least one common node; And form the one of following electric connection mode through this common node: series, parallel, connection in series-parallel connect, oppositely connection in series-parallel and bridge circuit connection.
8. light-emitting component as claimed in claim 1, wherein also forms conductive structure in this carrier and this light-emitting diode chip for backlight unit.
9. light-emitting component as claimed in claim 1, wherein this carrier be following one of them: lead frame, large scale are inlayed substrate or circuit board.
10. light-emitting component as claimed in claim 1, wherein the juncture between this light-emitting diode chip for backlight unit and this carrier is following juncture one or a combination set of: welding procedure and adhesion technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410312050.3A CN104091815A (en) | 2010-10-12 | 2010-10-12 | Light-emitting component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410312050.3A CN104091815A (en) | 2010-10-12 | 2010-10-12 | Light-emitting component |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010506242.XA Division CN102446948B (en) | 2010-10-12 | 2010-10-12 | Light emitting element |
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| Publication Number | Publication Date |
|---|---|
| CN104091815A true CN104091815A (en) | 2014-10-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410312050.3A Pending CN104091815A (en) | 2010-10-12 | 2010-10-12 | Light-emitting component |
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Application publication date: 20141008 |