CN100444416C - Method for preparing LED, and structure - Google Patents
Method for preparing LED, and structure Download PDFInfo
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- CN100444416C CN100444416C CNB2005100742500A CN200510074250A CN100444416C CN 100444416 C CN100444416 C CN 100444416C CN B2005100742500 A CNB2005100742500 A CN B2005100742500A CN 200510074250 A CN200510074250 A CN 200510074250A CN 100444416 C CN100444416 C CN 100444416C
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Abstract
The present invention relates to a method for manufacturing light emitting diodes and a structure. The manufacturing method mainly has the procedures that a groove is etched on a base material; two doping regions are arranged on the bottom of the groove by ion implantation so as to form a bidirectional diode; a metal electrode is coated on the groove by vaporization; the metal electrode is processed to divide the single metal electrode into a positive electrode and a negative electrode; besides, crystals are combined between the positive electrode and the negative electrode and are packed for molding so the manufacture of a light emitting diode is completed. The light emitting diode which is manufactured according to the procedures has the effect of high light emitting efficiency, antistatic protection, extension of service life, etc.
Description
Technical field
The present invention aims to provide a kind of shortening processing procedure, saves cost; and the light-emitting diode made of order has high efficiency light-emitting, antistatic protection and the method for making and the structure thereof of the light-emitting diode of effect such as increase the service life, and is suitable for being applied in light-emitting diode or similar structures especially.
Background technology
Light-emitting diode is because power consumption is few, volume is little, be widely used in the indicator light of electrical home appliances, back light, traffic sign, advertisement plate and automobile the 3rd brake light of mobile phone or the like at present, in recent years, because new luminescent material is by the exploitation of success, as AlGaInP (AlGaInP) and aluminum indium nitride gallium (AlGaInN) etc., the brightness of light-emitting diode can further be promoted.
As TW letters patent book number No. 506145 " high brightness LED ", No. 474030 cases such as " light emitter diode seal method ", mainly the high reflectance material is coated on the substrate recess with sloped sidewall with transparency carrier crystal-coated light-emitting diodes crystal grain; Again, or as No. 465123 " high power white light-emitting diode " of TW letters patent book number, No. 554549 cases such as " the highly reflective ohmic contact of Al-Ca-In-N flip-chip light-emitting diode ", be to mention the reflector is coated on the transparent ohmic electrode, to promote luminous efficiency.
Yet though above-mentioned patent can promote the luminous efficiency of light-emitting diode, those methods that promote luminous efficiency all do not have the luminescent grain of considering and can suffer electrostatic breakdown, and then the life-span of reduction light-emitting diode, are to be its topmost defective.
Therefore, propose a kind ofly to reduce processing procedure, save cost, and make the light-emitting diode of being made have high efficiency light-emitting, antistatic protection and effect such as increase the service life, real is purpose of the present invention.
Summary of the invention
Main purpose of the present invention is providing a kind of method for making of reducing processing procedure, cost-effective light-emitting diode.
Secondary objective of the present invention is providing a kind of light emitting diode construction that has high efficiency light-emitting, antistatic protection and increase the service life.
In order to achieve the above object, the step that method of the present invention is taked comprises: 1, etch a groove on base material, behind the groove coating photoresistance of this base material, utilize wet etch method to make through development, this groove angle is 44～64 degree; 2, implant out two doped regions to form a two-way diode in bottom portion of groove with ion; 3, evaporation one metal electrode is on groove; 4,, and single metallic electrode is divided into positive and negative two electrodes to metal electrode processing; And 5, the chip of light-emitting diode is formed on the transparency carrier, when this transparency carrier and chips incorporate, with chip reversing, transparency carrier is on chip, the P electrode of chip and N electrode are down, and the P electrode of this chip is provided with an ohmic contact layer; With chips incorporate between positive and negative two electrodes of metal electrode, and with its encapsulated moulding, to finish the making of light-emitting diode; And have high efficiency light-emitting, antistatic protection and effect such as increase the service life according to the light-emitting diode that above-mentioned steps is made.
By the above-mentioned step of reducing the number of, the light-emitting diode made of order has high efficiency light-emitting, antistatic protection and effect such as increase the service life.
For reaching above-mentioned purpose, the invention provides a kind of light emitting diode construction, it is characterized in that, comprising:
One is provided with the silicon substrate of groove, and the groove angle that this base material etches is 44～64 degree;
Two doped regions are located at the bottom of the groove of above-mentioned base material, to form a bidirectional diode;
Two metal electrodes are located at the opposite side of base material groove;
The chips incorporate of this light-emitting diode is on a transparency carrier, and the P electrode of this chip is provided with an ohmic contact layer;
The chips incorporate of this light-emitting diode is between above-mentioned two metal electrodes; And
Sealing is with the said modules encapsulated moulding.
Other characteristics of the present invention and specific embodiment can further be understood in the detailed description of following conjunction with figs..
Description of drawings
Fig. 1 is a manufacturing flow chart of the present invention.
Fig. 2 is the schematic diagram of silicon substrate etched recesses of the present invention.
Fig. 3 makes the schematic diagram of doped region for the present invention.
Fig. 4 makes the schematic diagram of metal electrode for the present invention.
The light-emitting diode cut-away view of Fig. 5 for making according to step of the present invention.
Fig. 6 is the equivalent circuit diagram of the light-emitting diode made according to step of the present invention.
Symbol description among the figure:
10 silicon substrates
11 grooves
20 doped regions
31 positive electrodes
30 negative electrodes
40 chips
41 transparency carriers
42 ohmic contact layers
50 sealings
Embodiment
See also Fig. 1, processing procedure of the present invention may further comprise the steps:
1, etch a groove on base material, behind the groove coating photoresistance of this base material, utilize wet etch method to make through development, this groove angle is 44～64 degree;
2, implant out two doped regions to form a two-way diode in bottom portion of groove with ion;
3, evaporation one metal electrode is on groove;
4,, and single metallic electrode is divided into positive and negative two electrodes to metal electrode processing; And
5, the chip of light-emitting diode is formed on the transparency carrier, and when this transparency carrier and chips incorporate, with chip reversing, transparency carrier is on chip, and the P electrode of chip and N electrode are following, and the P electrode of this chip is provided with an ohmic contact layer; With chips incorporate between positive and negative two electrodes of metal electrode, and with its encapsulated moulding, to finish the making of light-emitting diode.
As shown in Figure 2, during actual the manufacturing, get a brilliant crystallization direction of heap of stone and be＜100〉silicon substrate 10, be coated with photoresistance thereon, after development utilizes wet etching, make the groove 11 with angle of inclination, and this groove angle is 44～64 degree, it is non-etc. to etching solution that this etching solution can be potassium hydroxide (KOH) or other; Deposited silicon nitride (SiNx) or silica (SiOx) also or on silicon substrate 10 carry out wet etching or dry ecthing after exposure, development, etching, make the groove 11 with angle of inclination.
See also Fig. 3, be coated with photoresistance again in the bottom of this groove 11 again, produce two doped regions 20 with ion implantation or gaseous diffusion mode, make silicon substrate 10 formation one NPN of groove 11 bottoms or the bidirectional diode of positive-negative-positive structure, and implanted ion can be boron (B) or phosphorus (P) element.
As shown in Figure 4, with above-mentioned silicon substrate 10 surfaces that are provided with groove 11 and doped region 20, evaporation one deck has the metal electrode layer of conduction and light reflection effect, the material of this metal electrode layer can be metal or alloy such as Al, Ag, Ni, Ti, Pt, Au, Sn, Cu, and utilize laser processing or the metal electrode layers in the groove 11 are divided into two formation positive electrode 31 and negative electrode 30 contact-making surfaces with dried, wet etching mode.
See also Fig. 5, again chip 40 is combined with silicon substrate 10 in the chip bonding mode, this chip 40 is formed on the transparency carrier 41, the semiconducting compound of forming by period of element Table III family and V group element, in conjunction with the time with chip 40 counter-rotating, be transparency carrier 41 on chip, the P electrode of chip and N electrode be down, mat two metal couplings 45 link with negative electrode 30 with positive electrode 31 in the groove 11, the metal coupling 45 of this combination can be Au, Sn, AuSn, Al wherein any or combination; The P utmost point of this chip 40 is coated with the ohmic contact layer 42 of tool light reflection function, and the material of this ohmic contact layer 42 can be metal or alloy such as Al, Ni, Ti, Pt, Ag, Au, Sn, Cu.With a sealing 50 chip 40 and silicon substrate 10 are encapsulated at last, finish the making of a light-emitting diode.
When this light-emitting diode was bestowed an electric current, the light that this chip 40 is sent can pass through the transparency carrier 41 at the back side, and can not covered by the P utmost point electrode in front; Moreover, set metal electrode layer (containing positive electrode 31 and negative electrode 30) all has conduction and light reflection effect on these silicon substrate 10 grooves 11, the ohmic contact layer 42 of the same applying implenent light of the P electrode reflection function of this chip 40 simultaneously all can promote the luminous efficiency of this light-emitting diode greatly.
See also Fig. 6; the light-emitting diode of making according to step of the present invention; its chip 40 is parallel way with two doped regions 20 and is connected; promptly be equivalent to a light-emitting diode two-way diode in parallel; so when electric current passed through, these two doped regions, 20 formed bidirectional diodes were owing to have the characteristic of two-way breakdown voltage; so can protect this chip 40, prolong the life-span of this light-emitting diode to avoid chip 40 to suffer electrostatic breakdown.
As from the foregoing, have following practical advantage with the method for making of the present invention and the structure of making:
1, the processing procedure to simplify makes the light-emitting diode of being made not only have advantages such as high efficiency light-emitting and antistatic protection, and escapable cost.
2, because the light-emitting diode of making is equal to a two-way diode in parallel, because bidirectional diode has two-way breakdown voltage characteristic, thus can protect chip to avoid suffering electrostatic breakdown, and can prolong the useful life of light-emitting diode.
The above only is preferred embodiment of the present invention, the impartial design variation of being done according to the present patent application claim such as, and the technology that all should be this case contains.
In sum, the present invention discloses the method for making and the structure thereof of the light-emitting diode of an innovation, can promote luminous efficiency though improved the light-emitting diode that prior art uses, but reckon without the defective of electrostatic breakdown, and provide a kind of processing procedure to simplify, reduce cost can to promote simultaneously luminous efficiency, and the method for making and the structure thereof of the light-emitting diode that can increase the service life, have novelty, and the value on the industry, application for a patent for invention is proposed in accordance with the law.
Claims (17)
1, a kind of method for making of light-emitting diode is characterized in that, comprises the following steps:
Etch a groove on base material, behind the groove coating photoresistance of this base material, utilize wet etch method to make through development, this groove angle is 44～64 degree;
Implant out two doped regions to form a two-way diode in bottom portion of groove with ion;
Evaporation one metal electrode is on groove;
To metal electrode processing, and single metallic electrode is divided into positive and negative two electrodes;
The chip of described light-emitting diode is formed on the transparency carrier, and when this transparency carrier and chips incorporate, with chip reversing, transparency carrier is on chip, and the P electrode of chip and N electrode are following, and the P electrode of this chip is provided with an ohmic contact layer;
With the chips incorporate of described light-emitting diode between positive and negative two electrodes of metal electrode, and with its encapsulated moulding, to finish the making of light-emitting diode.
2, the method for making of light-emitting diode according to claim 1 is characterized in that, this base material selects for use＜and 100〉crystallization direction crystal silicon base material of heap of stone.
3, the method for making of light-emitting diode according to claim 1 is characterized in that the etching solution of this wet etch method is a potassium hydroxide, and promptly KOH or other are non-etc. to etching solution.
4, the method for making of light-emitting diode according to claim 1 is characterized in that this ion is made two doped regions to form a two-way diode in the gaseous diffusion mode.
5, the method for making of light-emitting diode according to claim 1 is characterized in that this ion is boron or P elements.
6, the method for making of light-emitting diode according to claim 1 is characterized in that, this ion is implanted formed bidirectional diode and is parallel way with chip and is connected.
7, the method for making of light-emitting diode according to claim 1 is characterized in that, this metal electrode is a kind of metal electrode with conduction and light reflection effect.
8, the method for making of light-emitting diode according to claim 1 is characterized in that the material of this ohmic contact layer is Al, Ni, Ti, Pt, Ag, Au, Sn, Cu metal or alloy.
9, the method for making of light-emitting diode according to claim 1 is characterized in that the material of this metal electrode is Al, Ag, Ni, Ti, Pt, Au, Sn, Cu metal or alloy.
10, the method for making of light-emitting diode according to claim 1 is characterized in that, the material of the binding site of this chip and metal electrode is wherein any or combination of Au, Sn, Au Sn, Al.
11, a kind of light emitting diode construction is characterized in that, comprising:
A silicon substrate that is provided with groove, the groove angle that this base material etches are 44～64 degree;
Two doped regions are located at the bottom of the groove of above-mentioned base material, to form a bidirectional diode;
Two metal electrodes are located at the opposite side of base material groove;
The chip of this light-emitting diode is formed on the transparency carrier, and transparency carrier is on chip, and the P electrode of chip and N electrode are following, and the P electrode of this chip is provided with an ohmic contact layer;
The chips incorporate of this light-emitting diode is between above-mentioned two metal electrodes; And
Sealing is with the said modules encapsulated moulding.
12, as light emitting diode construction as described in the claim 11, it is characterized in that, this base material selects for use＜100〉crystallization direction crystal silicon base material of heap of stone.
13, as light emitting diode construction as described in the claim 11, it is characterized in that the formed bidirectional diode of this two doped region is parallel way with chip and is connected.
As light emitting diode construction as described in the claim 11, it is characterized in that 14, this metal electrode is a kind of metal electrode with conduction and light reflection effect.
15, as light emitting diode construction as described in the claim 11, it is characterized in that the material of this ohmic contact layer is Al, Ni, Ti, Pt, Ag, Au, Sn, Cu metal or alloy.
16, as light emitting diode construction as described in the claim 11, it is characterized in that the material of this metal electrode is Al, Ag, Ni, Ti, Pt, Au, Sn, Cu metal or alloy.
As light emitting diode construction as described in the claim 11, it is characterized in that 17, the material of the binding site of this chip and metal electrode is wherein any or combination of Au, Sn, Au Sn, Al.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100742500A CN100444416C (en) | 2005-06-02 | 2005-06-02 | Method for preparing LED, and structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100742500A CN100444416C (en) | 2005-06-02 | 2005-06-02 | Method for preparing LED, and structure |
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| Publication Number | Publication Date |
|---|---|
| CN1874013A CN1874013A (en) | 2006-12-06 |
| CN100444416C true CN100444416C (en) | 2008-12-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005100742500A Expired - Fee Related CN100444416C (en) | 2005-06-02 | 2005-06-02 | Method for preparing LED, and structure |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI363437B (en) | 2008-05-21 | 2012-05-01 | Ind Tech Res Inst | Light emitting diode package capable of providing electrostatic discharge circuit protection and process of making the same |
| CN101599517B (en) * | 2008-06-03 | 2011-07-27 | 财团法人工业技术研究院 | Light emitting diode (LED) packaging structure with electrostatic protection function and manufacturing method thereof |
| CN113314616A (en) * | 2021-06-08 | 2021-08-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | Bidirectional conduction EDS diode chip and manufacturing method thereof |
| CN114171422B (en) * | 2022-02-11 | 2022-06-03 | 浙江里阳半导体有限公司 | Method for manufacturing semiconductor device and method for detecting vapor deposition defect thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020179914A1 (en) * | 2001-06-05 | 2002-12-05 | Jinn-Kong Sheu | Group III-V element-based LED having flip-chip structure and ESD protection capacity |
| CN1463047A (en) * | 2002-05-30 | 2003-12-24 | 光颉科技股份有限公司 | Encapsulation method for increasing LED brightness |
| JP2004207621A (en) * | 2002-12-26 | 2004-07-22 | Kyocera Corp | Package for storing light emitting element and light emitting device |
| CN1588657A (en) * | 2004-07-02 | 2005-03-02 | 北京工业大学 | High anti-static high efficiency light-emitting diode and producing method |
-
2005
- 2005-06-02 CN CNB2005100742500A patent/CN100444416C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020179914A1 (en) * | 2001-06-05 | 2002-12-05 | Jinn-Kong Sheu | Group III-V element-based LED having flip-chip structure and ESD protection capacity |
| CN1463047A (en) * | 2002-05-30 | 2003-12-24 | 光颉科技股份有限公司 | Encapsulation method for increasing LED brightness |
| JP2004207621A (en) * | 2002-12-26 | 2004-07-22 | Kyocera Corp | Package for storing light emitting element and light emitting device |
| CN1588657A (en) * | 2004-07-02 | 2005-03-02 | 北京工业大学 | High anti-static high efficiency light-emitting diode and producing method |
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| CN1874013A (en) | 2006-12-06 |
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Granted publication date: 20081217 Termination date: 20130602 |