CN101740673B - High-brightness light emitting diode structure and manufacturing method thereof - Google Patents
High-brightness light emitting diode structure and manufacturing method thereof Download PDFInfo
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- CN101740673B CN101740673B CN2008101770573A CN200810177057A CN101740673B CN 101740673 B CN101740673 B CN 101740673B CN 2008101770573 A CN2008101770573 A CN 2008101770573A CN 200810177057 A CN200810177057 A CN 200810177057A CN 101740673 B CN101740673 B CN 101740673B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 84
- 239000000758 substrate Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 19
- 239000011265 semifinished product Substances 0.000 claims description 17
- 239000011241 protective layer Substances 0.000 claims description 14
- 238000010276 construction Methods 0.000 claims description 13
- 239000011247 coating layer Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 8
- 229910005540 GaP Inorganic materials 0.000 claims description 7
- GHBXKGCPYWBGLB-UHFFFAOYSA-H [Al+3].[In+3].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O Chemical compound [Al+3].[In+3].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O GHBXKGCPYWBGLB-UHFFFAOYSA-H 0.000 claims description 7
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 230000004913 activation Effects 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 150000003376 silicon Chemical class 0.000 description 4
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
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Abstract
The invention provides a high-brightness light emitting diode structure and a manufacturing method thereof. The structure comprises a silicon basal plate, a metal bonding layer, a metal reflecting layer, an N type semiconductor layer, an activation layer and a P type semiconductor layer which are sequentially stacked, wherein an N type basal plate is stripped off after the metal reflecting layer, the N type semiconductor layer, the activation layer and the P type semiconductor layer are deposited and stacked on the N type basal plate and are bonded on the silicon basal plate by the metal bonding layer. Accordingly, the high-brightness light emitting diode structure utilizes the silicon basal plate to replace the traditional gallium arsenide basal plate which can absorb light, thereby lowering the light loss and enhancing the brightness of a light emitting diode.
Description
Technical field
The present invention relates to a kind of light emitting diode construction, be specifically related to improve structure and its manufacture method of light-emitting diode luminance.
Background technology
Light-emitting diode (Light Emitting Diode, LED) be a kind of cold light light-emitting component, its principle of luminosity is to apply electric current on the III-V group iii v compound semiconductor material, utilize interior electronics of diode and hole to interosculate, and be the form of light with power conversion, just can be luminous when energy disengages, and use for a long time also can be as hot as the incandescent lamp bulb.The advantage of light-emitting diode is that volume is little, the life-span is long, driving voltage is low, reaction rate is fast, vibration strength is special good, can cooperate the demand of light, the thin and miniaturization of various device, becomes product very universal in the daily life already.
Present luminescent properties performance and the efficient of light-emitting diode is showing improvement or progress day by day, can be widely used in the daily life, it is of a great variety, utilize the variation of various kinds of compound semiconductors material and component structure, can design the light of each color such as rubescent, orange, yellow, green, blue, purple, and the light-emitting diode of invisible light such as infrared light, ultraviolet light, various light-emitting diodes have been widely used in outdoor billboard, brake light, traffic lights and display etc.
Mainly consist of n type semiconductor layer in the light-emitting diode, the formed sandwich structure of active layer and p type semiconductor layer, it mainly is that AlGaInP quaternary element depositions such as (AlGaInP) forms, or gallium phosphide (GaP), or gallium aluminum arsenide (GaAlAs), or by GaAs (GaAs), form Deng semi-conducting material, its internal structure is a PN junction structure, has unilateral conduction, light-emitting diode is generally deposition and is formed on the GaAs substrate, because the GaAs substrate has the characteristic of extinction, therefore the light that produced of light-emitting diode epitaxial layer, the part of directive GaAs substrate can be absorbed, therefore the light that causes producing can't be fully utilized, and influences its brightness.
Summary of the invention
Therefore, main purpose of the present invention is to disclose a kind of light emitting diode construction and its manufacture method that promotes brightness.
By as can be known above, for achieving the above object, the technical scheme that technical solution problem of the present invention is adopted is, a kind of high-brightness LED construction is provided, this structure comprises a silicon substrate, a metal bonding coat, a metallic reflector, a n type semiconductor layer, an active layer and a p type semiconductor layer, this metal bonding coat of storehouse on this silicon substrate wherein, this metallic reflector of storehouse on this metal bonding coat, this n type semiconductor layer is stacked on this metallic reflector, this active layer is stacked on this n type semiconductor layer, and this p type semiconductor layer is stacked on this active layer.
The manufacture method of this high-brightness LED construction may further comprise the steps, at first for preparing a N type substrate, and on this N type substrate storehouse one p type semiconductor layer, an active layer, a n type semiconductor layer and a metallic reflector and form one first semi-finished product in regular turn; Then for preparing a silicon substrate, and on this silicon substrate storehouse one metal bonding coat, and form one second semi-finished product, again then for this first half-finished metallic reflector and this second half-finished this metal bonding coat are binded, remove this first half-finished N type substrate by etching method again, promptly finish the making of high brightness LED of the present invention.
In view of the above, the invention has the advantages that the GaAs substrate that to exempt use meeting extinction, and can increase the light utilization ratio, and can improve brightness, make full use of the light that is produced, and form high brightness LED by the reflection of this metallic reflector.
Description of drawings
Fig. 1 is a light-emitting diode structure profile of the present invention.
Fig. 2-the 1st, the present invention's first half-finished section of structure.
Fig. 2-the 2nd, the present invention's second half-finished section of structure.
Fig. 3 is the section of structure after first and second semi-finished product of the present invention bind.
Fig. 4 is the section of structure that Fig. 3 of the present invention removes N type substrate and resilient coating.
Embodiment
Relevant detailed content of the present invention and technical descriptioon now are described further with embodiment, but will be appreciated that, these embodiment are the purpose for illustrating only, and should not be interpreted as restriction of the invention process.
With reference to shown in Figure 1, structure of the present invention comprises a silicon substrate 10, a metal bonding coat 20, a metallic reflector 21, a n type semiconductor layer 30, an active layer 40 and a p type semiconductor layer 50, this metal bonding coat 20 of storehouse on this silicon substrate 10 wherein, this metallic reflector 21 is stacked on this metal bonding coat 20, this n type semiconductor layer 30 can be made by any that is selected from GaAs, gallium phosphide, AlGaInP, aluminum phosphate indium and aluminum gallium arsenide, and this n type semiconductor layer 30 is stacked on this metallic reflector 21.
This active layer 40 can be the multi layer quantum well of the periodic structure formation that comprises an aluminum indium nitride gallium, and this active layer 40 is stacked on this n type semiconductor layer 30, this n type semiconductor layer 30 can comprise a N type coating layer 31 and a N type Window layer 32 again, this N type Window layer 32 is to contact with this metallic reflector 21, and 31 of this N type coating layers contact with this active layer 40.
This p type semiconductor layer 50 is stacked on this active layer 40, this p type semiconductor layer 50 can be made by any that is selected from GaAs, gallium phosphide, AlGaInP, aluminum phosphate indium and aluminum gallium arsenide, and this p type semiconductor layer 50 can comprise a P type ohmic contact layer 51 and a P type coating layer 52, and this P type coating layer 52 contacts with this active layer 40.Storehouse has a protective layer 60 on this p type semiconductor layer 50 again, and this protective layer 60 is any of silicon dioxide and silicon nitride, and a joint sheet 70 can be run through this protective layer 60 by the outside, and contacts with this p type semiconductor layer 50.
Shown in Fig. 2-1 and Fig. 2-2, step of the present invention, at first comprise and prepare a N type substrate 90, and can be on this N type substrate 90 first storehouse one resilient coating 91, this resilient coating 91 is any of N type and P type, and on this N type substrate 90 (this resilient coating 91) storehouse one p type semiconductor layer 50 in regular turn, one active layer 40, one n type semiconductor layer 30 and a metallic reflector 21 and form one first semi-finished product A (shown in Fig. 2-1), this active layer 40 can comprise the multi layer quantum well of the periodic structure formation of an aluminum indium nitride gallium, and this n type semiconductor layer 30 can be by being selected from GaAs with this p type semiconductor layer 50, gallium phosphide, AlGaInP, any of aluminum phosphate indium and aluminum gallium arsenide made.
And this p type semiconductor layer 50 of storehouse can be storehouse P type coating layer 52 again behind the first storehouse P type ohmic contact layer 51, and this n type semiconductor layer 30 of storehouse can first storehouse N type coating layer 31 again, and storehouse N type Window layer 32 again.Then for preparing silicon substrate 10, and on this silicon substrate 10 storehouse one metal bonding coat 20 formation one second semi-finished product B (shown in Fig. 2-2).
With reference to Fig. 3 and shown in Figure 4, the metallic reflector 21 of these first semi-finished product A and this metal bonding coat 20 of these second semi-finished product B are binded, remove N type substrate 90 and this resilient coating 91 of these first semi-finished product A again by etching method.
Referring again to shown in Figure 1; can be on this p type semiconductor layer 50 of these first semi-finished product A storehouse one protective layer 60; and this protective layer 60 can be any of silicon dioxide and silicon nitride; and can be after protective layer 60 storehouses be finished; one joint sheet 70 is run through this protective layer 60 by the outside, and contact with this p type semiconductor layer 50.
As mentioned above, the invention provides a kind of light emitting diode construction and its manufacture method of using the GaAs substrate of exempting, the present invention is not owing to use the GaAs substrate, and and then come reverberation by metallic reflector 21, therefore it can increase the utilization ratio of light, make full use of light and can form high brightness LED, satisfy user's demand.
Above-mentioned is preferred embodiment of the present invention only, is not to be used for limiting scope of the invention process.With good grounds the present patent application claim equivalent variations and the modification made, be claim of the present invention and contain.
Claims (15)
1. a high-brightness LED construction is characterized in that, comprises:
One silicon substrate (10);
One metal bonding coat (20), described metal bonding coat (20) are stacked on the described silicon substrate (10);
One metallic reflector (21), described metallic reflector (21) are stacked on the described metal bonding coat (20);
One n type semiconductor layer (30), described n type semiconductor layer (30) are stacked on the described metallic reflector (21);
One active layer (40), described active layer (40) are stacked on the described n type semiconductor layer (30); And
One p type semiconductor layer (50), described p type semiconductor layer (50) are stacked on the described active layer (40);
Wherein, described p type semiconductor layer (50) is gone up storehouse a protective layer (60), and a joint sheet (70) runs through described protective layer (60) by the outside, and contacts with described p type semiconductor layer (50).
2. high-brightness LED construction according to claim 1 is characterized in that, described protective layer (60) is any of silicon dioxide and silicon nitride.
3. high-brightness LED construction according to claim 1 is characterized in that, described p type semiconductor layer (50) comprises a P type ohmic contact layer (51) and a P type coating layer (52), and described P type coating layer (52) contacts with described active layer (40).
4. high-brightness LED construction according to claim 1 is characterized in that, described active layer (40) comprises the multi layer quantum well of the periodic structure formation of an aluminum indium nitride gallium.
5. high-brightness LED construction according to claim 1, it is characterized in that, described n type semiconductor layer (30) comprises a N type coating layer (31) and a N type Window layer (32), and described N type Window layer (32) contacts with described metallic reflector (21), and described N type coating layer (31) contacts with described active layer (40).
6. high-brightness LED construction according to claim 1 is characterized in that, described n type semiconductor layer (30) is made by any that is selected from GaAs, gallium phosphide, AlGaInP, aluminum phosphate indium and aluminum gallium arsenide.
7. high-brightness LED construction according to claim 1 is characterized in that, described p type semiconductor layer (50) is made by any that is selected from GaAs, gallium phosphide, AlGaInP, aluminum phosphate indium and aluminum gallium arsenide.
8. the manufacture method of a high brightness LED is characterized in that, comprises following steps:
Prepare a N type substrate (90), and on described N type substrate (90) storehouse one p type semiconductor layer (50), an active layer (40), a n type semiconductor layer (30) and a metallic reflector (21) and form one first semi-finished product (A) in regular turn; Prepare a silicon substrate (10), and go up storehouse one metal bonding coat (20), and form one second semi-finished product (B) at described silicon substrate (10);
The metallic reflector (21) of described first semi-finished product (A) and the described metal bonding coat (20) of described second semi-finished product (B) are binded, remove the N type substrate (90) of described first semi-finished product (A) again by etching method;
Wherein, p type semiconductor layer (50) at described first semi-finished product (A) is gone up storehouse one protective layer (60); after protective layer (60) storehouse is finished, a joint sheet (70) is run through described protective layer (60) by the outside, and contact with described p type semiconductor layer (50).
9. the manufacture method of high brightness LED according to claim 8, it is characterized in that, first storehouse one resilient coating of described N type substrate (90) (91), described resilient coating (91) is any of N type and P type, the described p type semiconductor layer of storehouse (50) again, and after described first semi-finished product (A) and described second semi-finished product (B) combination, utilize etching method to remove described N type substrate (90) and described resilient coating (91).
10. the manufacture method of high brightness LED according to claim 8 is characterized in that, described protective layer (60) is any of silicon dioxide and silicon nitride.
11. the manufacture method of high brightness LED according to claim 8 is characterized in that, the described p type semiconductor layer of storehouse (50) is storehouse one a P type coating layer (52) again behind the first storehouse one P type ohmic contact layer (51).
12. the manufacture method of high brightness LED according to claim 8 is characterized in that, described active layer (40) comprises the multi layer quantum well of the periodic structure formation of an aluminum indium nitride gallium.
13. the manufacture method of high brightness LED according to claim 8 is characterized in that, the described n type semiconductor layer of storehouse (30) is first storehouse one N type coating layer (31), storehouse one N type Window layer (32) again.
14. the manufacture method of high brightness LED according to claim 8 is characterized in that, described n type semiconductor layer (30) is made by any that is selected from GaAs, gallium phosphide, AlGaInP, aluminum phosphate indium and aluminum gallium arsenide.
15. the manufacture method of high brightness LED according to claim 8 is characterized in that, described p type semiconductor layer (50) is made by any that is selected from GaAs, gallium phosphide, AlGaInP, aluminum phosphate indium and aluminum gallium arsenide.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101770573A CN101740673B (en) | 2008-11-19 | 2008-11-19 | High-brightness light emitting diode structure and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008101770573A CN101740673B (en) | 2008-11-19 | 2008-11-19 | High-brightness light emitting diode structure and manufacturing method thereof |
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| CN101740673A CN101740673A (en) | 2010-06-16 |
| CN101740673B true CN101740673B (en) | 2011-11-30 |
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| TWI499077B (en) * | 2012-12-04 | 2015-09-01 | High Power Opto Inc | Semiconductor light-emitting device |
| CN106449916A (en) * | 2016-10-24 | 2017-02-22 | 华南理工大学 | Vertical structure nonpolar LED (light emitting diode) chip on lithium gallium oxide substrate and preparation method of vertical structure nonpolar LED chip |
| CN109671828B (en) * | 2018-11-30 | 2021-04-23 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
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