CN109713104B - Light-emitting element, light source module and backlight module - Google Patents
Light-emitting element, light source module and backlight module Download PDFInfo
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- CN109713104B CN109713104B CN201711011787.1A CN201711011787A CN109713104B CN 109713104 B CN109713104 B CN 109713104B CN 201711011787 A CN201711011787 A CN 201711011787A CN 109713104 B CN109713104 B CN 109713104B
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Abstract
A light emitting device, a light source module and a backlight module are provided. The light-emitting element comprises a light-mixing substrate and a plurality of light-emitting diode chips. The light mixing substrate is provided with a first surface and a second surface opposite to the first surface. The light emitting diode wafer is arranged on the first surface of the light mixing substrate, and light rays emitted by the light emitting diode wafer are emitted after being mixed by the light mixing substrate. The light mixing substrate is a growth substrate of the light emitting diode chip. The area of the light mixing substrate is larger than the sum of the areas of the light emitting diode chips, and the distance between any two light emitting diode chips is larger than the side length of any one light emitting diode chip. Therefore, the optical distance of the backlight module can be greatly reduced, and the design of a thin product is facilitated.
Description
Technical Field
The invention relates to a light-emitting element, a light source module and a backlight module.
Background
The direct-type backlight light source module is mainly used for large-size displays at present, and the Optical Distance (OD) is required to be reduced from 40mm to less than 15 mm. In order to meet the demand of thinning display, the backlight structure with High Dynamic Range (HDR) that is thinned in recent years is further applied to the dashboard of vehicle, the panel of notebook computer and even the backlight of mobile phone, so that the optical distance is required to be reduced to 5mm, even 0.5 mm. Therefore, how to achieve a very uniform surface light source at such a thin optical distance actually belongs to one of the important research and development issues, and is also an urgent need for improvement in the related art.
Disclosure of Invention
In view of the above, an objective of the present invention is to provide a light emitting device, a light source module and a backlight module that can solve the above problems.
In order to achieve the above objects, according to one embodiment of the present invention, a light emitting device includes a light mixing substrate and a plurality of led chips. The light mixing substrate is provided with a first surface and a second surface opposite to the first surface. The light emitting diode wafer is arranged on the first surface of the light mixing substrate, and light rays emitted by the light emitting diode wafer are emitted after being mixed by the light mixing substrate. The light mixing substrate is a growth substrate of the light emitting diode chip. The area of the light mixing substrate is larger than the sum of the areas of the light emitting diode chips, and the distance between any two light emitting diode chips is larger than the side length of any one light emitting diode chip.
In one or more embodiments of the present invention, the led chip includes a P-type semiconductor layer, an N-type semiconductor layer, a first electrode and a second electrode. The first electrode and the second electrode are arranged on one side of each light emitting diode wafer relative to the light mixing substrate and are respectively and electrically connected with the P-type semiconductor layer and the N-type semiconductor layer.
In one or more embodiments of the present invention, the light emitting device further includes: a wavelength conversion layer. The wavelength conversion layer is arranged on the second surface of the light mixing substrate.
In one or more embodiments of the present invention, the second surface of the light mixing substrate is coated with a wavelength conversion material.
In one or more embodiments of the present invention, the light emitting device further includes: an optical film. The optical film is arranged above the second surface of the light mixing substrate.
In one or more embodiments of the present invention, the second surface of the light mixing substrate has a patterned structure.
In one or more embodiments of the present invention, the thickness of the light emitting device is less than 10 mm.
In one or more embodiments of the present invention, the thickness of the light emitting device is less than 5 mm.
In one or more embodiments of the present invention, the thickness of the light emitting device is less than 2 mm.
In one or more embodiments of the present invention, the material of the light-mixing substrate includes sapphire, glass, transparent plastic material or material containing light-diffusing particles.
In one or more embodiments of the present invention, the material of the led chip includes a gallium nitride or an aluminum indium gallium phosphide quaternary material.
According to another embodiment of the present invention, a light source module includes a circuit board and a plurality of light emitting elements. The light-emitting element is fixed on the circuit board in a flip chip manner.
In one or more embodiments of the present invention, the circuit board includes a conductive layer. The light emitting diode chips in the light emitting element are electrically connected with each other through the conductive layer.
In one or more embodiments of the present invention, the at least two light emitting elements are electrically connected to each other through the conductive layer.
According to another embodiment of the present invention, a light source module includes a control circuit and a plurality of light emitting elements. The control circuit is electrically connected between the light-emitting elements.
In one or more embodiments of the present invention, the light emitting device further includes a conductive layer, and the led chips in the light emitting device are electrically connected to each other through the conductive layer.
In one or more embodiments of the present invention, the light emitting device further includes at least one control device, and the control device is electrically connected to at least one led chip in each of the light emitting devices.
In one or more embodiments of the present invention, the light mixing substrate in the light emitting device is a growth substrate of the control device and the led chip.
In one or more embodiments of the present invention, the light emitting device further includes a control device, and the control device is electrically connected to the conductive layer.
In one or more embodiments of the present invention, the light emitting device further includes a plurality of control elements, and the control elements are electrically connected to the conductive layer.
In one or more embodiments of the present invention, the number of the control elements in the light emitting elements corresponds to the number of the light emitting diode chips, and the control elements respectively and independently control the light emitting diode chips.
In one or more embodiments of the present invention, the light emitting device further includes a light blocking structure and a plurality of control elements, the light blocking structure is disposed in the light mixing substrate to define a plurality of light emitting areas, and each light emitting area includes a light emitting diode chip and a control element.
In one or more embodiments of the present invention, the light source module further includes: a wavelength conversion layer. The wavelength conversion layer is disposed on the light emitting element.
In one or more embodiments of the present invention, the second surface of the light mixing substrate in the light emitting device is coated with a wavelength conversion material.
According to another embodiment of the present invention, a backlight module includes a light source module. The overall thickness of the backlight module is less than 10 mm.
According to another embodiment of the present invention, a backlight module includes a light source module. The overall thickness of the backlight module is less than 10 mm.
In summary, in the light emitting device, the light source module and the backlight module of the present invention, the growth substrate of the led chip is directly used as the light mixing substrate of the light emitting device, so that the thickness of the light emitting device can be effectively reduced, and no additional secondary lens or other light guide device is required, thereby greatly reducing the optical distance of the backlight module, and facilitating the design of a thin product.
The foregoing is merely illustrative of the problems, solutions to problems, and other advantages that may be realized and attained by the invention, and the details of which are set forth in the following description and the drawings.
Drawings
In order to make the aforementioned and other objects, features, and advantages of the invention, as well as others which will become apparent, reference is made to the following description taken in conjunction with the accompanying drawings in which:
FIG. 1 is a partial top view of a backlight module according to an embodiment of the invention;
FIG. 2 is a partial side view of the backlight module of FIG. 1;
FIG. 3 is an enlarged view of portion A of FIG. 2;
FIG. 4 is an enlarged view of portion A of FIG. 2 in accordance with another embodiment of the present invention;
FIG. 5 is an enlarged view of portion A of FIG. 2 in accordance with another embodiment of the present invention;
FIG. 6 is a partial top view of a light source module according to another embodiment of the present invention;
FIG. 7 is a cross-sectional view taken along line I-I of FIG. 6;
FIG. 8A is a cross-sectional view taken along line I-I of FIG. 6 in accordance with another embodiment of the present invention;
FIG. 8B is a cross-sectional view taken along line I-I of FIG. 6 in accordance with another embodiment of the present invention;
fig. 9 is a partial top view of a light source module according to another embodiment of the present invention;
FIG. 10 is a cross-sectional view taken along line II-II of FIG. 9;
FIG. 11A is a cross-sectional view taken along line II-II of FIG. 9 in accordance with another embodiment of the present invention;
fig. 11B is a cross-sectional view taken along line II-II of fig. 9 in accordance with another embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation, numerous implementation details are set forth in order to provide a thorough understanding of the various embodiments of the present invention. It should be understood, however, that these implementation details are not to be interpreted as limiting the invention. That is, in some embodiments of the invention, such implementation details are not necessary. In addition, for the sake of simplicity, some conventional structures and elements are shown in the drawings in a simple schematic manner.
Fig. 1 is a partial top view of a backlight module 1 according to an embodiment of the invention. Fig. 2 is a partial side view of the backlight module 1 of fig. 1. First, as shown in fig. 1 and 2, in the present embodiment, the backlight module 1 includes a light source module 10 and an optical film OF disposed above the light source module 10. The light source module 10 includes a circuit board 200, a plurality of light emitting elements 100, and a wavelength conversion layer WC, the light emitting elements 100 being disposed on the circuit board 200, the wavelength conversion layer WC being disposed on the light emitting elements 100. Each light emitting device 100 includes a light mixing substrate 102 and a plurality of led chips 104. In the present embodiment, the number of the led chips 104 included in each light emitting element 100 may be four, for example, but the invention is not limited thereto, and one skilled in the art can flexibly select the number of the led chips 104 included in each light emitting element 100 according to actual requirements.
Fig. 3 is an enlarged view of a portion a of fig. 2. As shown in fig. 2 and fig. 3, the light emitting device 100 is flip-chip mounted on the circuit board 200. In the present embodiment, the circuit board 200 includes a conductive layer 202, and the led chips 104 in the light emitting device 100 are electrically connected to each other through the conductive layer 202. In some embodiments, at least two light emitting elements 100 are electrically connected to each other through the conductive layer 202.
Referring to fig. 3, in each of the light emitting devices 100, the light mixing substrate 102 has a first surface 1021 and a second surface 1022 opposite to the first surface 1021. The led chip 104 is disposed on the first surface 1021 of the light mixing substrate 102, and the light emitted from the led chip 104 is mixed by the light mixing substrate 102 and then emitted. In the present embodiment, the light mixing substrate 102 is a growth substrate of the led chip 104, that is, the led chip 104 is grown on the light mixing substrate 102 by, for example, an epitaxial process. In the present embodiment, the material of the light mixing substrate 102 includes sapphire, glass, transparent plastic material or material containing light diffusion particles, and the material of the light emitting diode chip 104 includes a gallium nitride or aluminum indium gallium phosphide quaternary material, but the invention is not limited thereto, and persons skilled in the art can flexibly select the materials of the light mixing substrate 102 and the light emitting diode chip 104 according to actual requirements.
Therefore, the light guide characteristic of the growth substrate of the led chip 104 is utilized by the present invention to directly serve as the light mixing substrate 102 of the light emitting device 100, so that the light emitted from the led chip 104 can be reflected back and forth in the light mixing substrate 102 to generate a uniform mixing effect, and a uniform surface light source can be formed on the other surface of the light mixing substrate 102 without passing through a secondary lens or an additional light guide element.
Generally, the overall thickness of the manufactured polycrystalline light emitting diode wafer can be controlled between 500 μm and 50 μm. Therefore, in the present embodiment, the thickness of the light emitting element 100 may be less than 10 mm. However, the invention is not limited thereto, and in some embodiments, the thickness of the light emitting element 100 may be less than 5 mm. In some embodiments, the thickness of the light emitting element 100 may be less than 2 mm. In addition, in the present embodiment, the overall thickness of the backlight module 1 may be less than 10 mm.
In the light emitting device 100 of the present invention, the growth substrate of the led chip 104 is directly used as the light mixing substrate 102 of the light emitting device 100, so that no additional secondary lens or other light guiding element is required, which not only greatly reduces the optical distance of the backlight module 1 and reduces the thickness, but also achieves the Local Dimming (Local Dimming) effect. In addition, when some of the led chips 104 in the light emitting device 100 are damaged or fail, the light emitted from other normal led chips 104 can still be reflected back and forth in the light mixing substrate 102 to generate a uniform mixing effect, so that the uniformity of the light emitted from the surface light source is not affected. Moreover, since each light emitting element 100 includes a plurality of led chips 104, the led chips 104 in each light emitting element 100 can be directly mounted at one time during the mounting process, so that compared with the conventional all-star backlight module, which requires mounting the leds one by one, the present invention can achieve the effects of reducing the mounting times, reducing the manufacturing cost, saving time and labor.
In each light emitting element 100, the area of the light mixing substrate 102 is larger than the sum of the areas of the light emitting diode chips 104, that is, in the present embodiment, the area of the light mixing substrate 102 is larger than the sum of the areas of the four light emitting diode chips 104. In addition, each led chip 104 has a side length L, and in each light emitting element 100, the distance D between any two led chips 104 is greater than the side length L of any one led chip 104. Therefore, under the same area, the present invention can use a smaller number of led chips 104 to achieve the same or better brightness effect as the traditional full sky dense arrangement, which can greatly reduce the manufacturing cost.
Referring to fig. 3, each led chip 104 includes a P-type semiconductor layer 106, an N-type semiconductor layer 108, a first electrode 110, and a second electrode 112. The first electrode 110 and the second electrode 112 are disposed on a side of the led chip 104 opposite to the light-mixing substrate 102, and are electrically connected to the P-type semiconductor layer 106 and the N-type semiconductor layer 108, respectively. In the present embodiment, the led chip 104 is electrically connected to the conductive layer 202 on the circuit board 200 in a flip-chip manner through the first electrode 110 and the second electrode 112.
As shown in fig. 3, the wavelength conversion layer WC included in the light source module 10 is disposed on the light emitting element 100. In the present embodiment, the wavelength conversion layer WC is disposed on the second surface 1022 of the light mixing substrate 102. By the arrangement of the wavelength conversion layer WC, a part of the light emitted from the led chip 104 can generate light having a different wavelength from the original light by the action of the wavelength conversion layer WC, so that the light source module 10 can achieve the desired light color. In some embodiments, instead of providing the wavelength conversion layer WC, the wavelength conversion material may be coated on the second surface 1022 of the light mixing substrate 102 in the light emitting element 100. The material of the wavelength conversion layer WC and the wavelength conversion material may include organic or inorganic materials. For example, the organic material may be, for example, Fluorescent pigments (Fluorescent pigments) or polymer Fluorescent materials (Fluorescent polymers), and the inorganic material may be, for example, Phosphor materials (phosphors) or Quantum dot materials (Quantum dots). The wavelength conversion layer WC or the wavelength conversion material may be disposed or coated on the light emitting elements 100 once after all the light emitting elements 100 are fabricated, so as to achieve the effect of saving the manufacturing process and the manufacturing cost.
In the present embodiment, the optical film OF included in the backlight module 1 is disposed above the wavelength conversion layer WC. By arranging the optical film OF, the backlight module 1 can achieve more uniform light emitting effect.
In some embodiments, the wavelength conversion layer WC or the optical film OF may be formed in each light-emitting element 100. This will be described below by way of example with reference to fig. 4.
Fig. 4 is an enlarged view of a portion a of fig. 2 according to another embodiment of the present invention. In this embodiment mode, the light-emitting element 100 further includes a wavelength conversion layer WC 1. Wavelength-converting layer WC1 is disposed on second surface 1022 of light-mixing substrate 102. In some embodiments, instead of providing the wavelength conversion layer WC1, a wavelength conversion material may be coated on the second surface 1022 of the light mixing substrate 102. As for the material of the wavelength conversion layer WC1 and the wavelength conversion material, the description of the previous embodiment is referred to and will not be repeated herein.
Please continue to refer to fig. 4. In this embodiment mode, the light-emitting element 100 further includes an optical film OF 1. The optical film OF1 is disposed over the second surface 1022 OF the light-mixing substrate 102. In some embodiments, an optical film OF1 may be disposed on wavelength-converting layer WC 1. In some embodiments, the second surface 1022 of the light mixing substrate 102 may have a patterned structure. Through the arrangement of the patterned structure, the light emitting element 100 can achieve a more uniform light emitting effect.
In the foregoing embodiment, the light source module 10 is electrically connected through the conductive layer 202 disposed on the circuit board 200, that is, the light source module 10 is operated by the control circuit on the circuit board 200. However, the invention is not limited to this, and in other embodiments, the control circuit may be directly disposed on the light mixing substrate 102, and the following description will be made by taking fig. 5 as an example.
Fig. 5 is an enlarged view of a portion a of fig. 2 according to another embodiment of the present invention. In this embodiment, the light source module 10 further includes a control circuit, and the control circuit is electrically connected between the light emitting elements 100. In some embodiments, the control circuit may include a plurality of conductive layers 202A respectively disposed in the light emitting elements 100. In other words, each light emitting element 100 further includes the conductive layer 202A. For example, as shown in fig. 5, the conductive layer 202A may be disposed on the first surface 1021 of the light-mixing substrate 102, and the led chips 104 in the light-emitting device 100 are electrically connected to each other through the conductive layer 202A.
Fig. 6 is a partial top view of a light source module 10A according to another embodiment of the present invention. Fig. 7 is a sectional view taken along line I-I of fig. 6. The light source module 10A of the present embodiment is similar to the light source module 10 described above, and the difference therebetween is that: in the present embodiment, each light emitting element 100A in the light source module 10A further includes at least one control element 114.
As shown in fig. 6 and 7, in the present embodiment, the control element 114 may be a transistor, for example, but the invention is not limited thereto, and one skilled in the art can flexibly select the type of the control element 114 according to actual requirements.
In the present embodiment, the number of the control elements 114 included in each light emitting element 100A may be, for example, one, but the invention is not limited thereto, and a person skilled in the art can flexibly select the number of the control elements 114 included in each light emitting element 100A according to actual requirements. In addition, the control element 114 is electrically connected to the conductive layer 202. In each light emitting element 100A, since the distance D between any two light emitting diode chips 104 is larger than the side length L of any one light emitting diode chip 104, there is enough space between the light emitting diode chips 104 to dispose the control element 114. The control device 114 is electrically connected to at least one led chip 104 in the light emitting device 100A. In the present embodiment, the control device 114 included in each light emitting device 100A is electrically connected to each led chip 104 in the light emitting device 100A, but the invention is not limited thereto, and a person skilled in the art can flexibly select the number of the led chips 104 to which the control device 114 is electrically connected according to actual requirements.
Fig. 8A is a cross-sectional view taken along line I-I of fig. 6 in accordance with another embodiment of the present invention. As described above, the control circuit may be directly disposed on the light mixing substrate 102. Therefore, in the present embodiment, the light source module 10A further includes a control circuit, and the control circuit is electrically connected between the light emitting elements 100A. In some embodiments, the control circuit may include a plurality of conductive layers 202A respectively disposed in the light emitting elements 100A. In other words, each light emitting element 100A further includes the conductive layer 202A. For example, as shown in fig. 8A, the conductive layer 202A may be disposed on the first surface 1021 of the light-mixing substrate 102, and the led chips 104 in the light-emitting device 100A are electrically connected to each other through the conductive layer 202A. In addition, the control element 114 is electrically connected to the conductive layer 202A.
Fig. 8B is a cross-sectional view taken along the line I-I of fig. 6 according to another embodiment of the present invention. The embodiment of fig. 8B differs from the embodiment of fig. 8A in that: the light mixing substrate 102 in each light emitting device 100A is a growth substrate of the control device 114 and the led chip 104. In other words, the control device 114 and the led chip 104 are grown on the same growth substrate. That is, the light mixing substrate 102 not only serves as a growth substrate for the led chip 104, but also serves as a substrate for forming the control device 114, thereby saving the processing time and cost. In addition, the control element 114 is electrically connected to the conductive layer 202A.
Fig. 9 is a partial top view of a light source module 10B according to another embodiment of the present invention. Fig. 10 is a sectional view taken along line II-II of fig. 9. The light source module 10B of the present embodiment is similar to the light source module 10A described above, and the difference therebetween is: the light emitting device 100B of the present embodiment further includes a light blocking structure 116 disposed in the light mixing substrate 102 to define a plurality of light emitting regions, each of which includes a light emitting diode chip and a control device 114.
As shown in fig. 9 and 10, the light emitting device 100B further includes a light blocking structure 116 disposed in the light mixing substrate 102 to define a plurality of light emitting regions LR1 to LR 4. In the present embodiment, the number of the light emitting regions may be four, for example, but the invention is not limited thereto, and one skilled in the art can flexibly select the number of the light emitting regions according to actual requirements. The four light emitting regions LR 1-LR 4 form a 2 by 2 matrix, the light emitting regions LR1 and LR4 include led chips 104A emitting a first color light, the light emitting region LR2 includes led chips 104B emitting a second color light, the light emitting region LR3 includes led chips 104C emitting a third color light, and the first color light, the second color light and the third color light are different in color. For example, the first color light may be blue, the second color light may be red, and the third color light may be green, but the invention is not limited thereto.
Each light emitting element 100B includes a plurality of control elements 114 therein. In the present embodiment, the number of the control elements 114 included in each light emitting element 100B may be four, for example, but the invention is not limited thereto, and a person skilled in the art can flexibly select the number of the control elements 114 included in each light emitting element 100B according to actual requirements. In addition, the control element 114 is electrically connected to the conductive layer 202. The four control elements 114 are respectively located in the four light-emitting regions LR 1-LR 4, that is, the light-emitting region LR1 includes a led chip 104A and a control element 114, the light-emitting region LR2 includes a led chip 104B and a control element 114, the light-emitting region LR3 includes a led chip 104C and a control element 114, and the light-emitting region LR4 includes a led chip 104A and a control element 114.
As shown in fig. 9, in the present embodiment, the light blocking structure 116 is disposed in a cross shape in the light mixing substrate 102 to define light emitting regions LR1 to LR 4. The light blocking structure 116 can block light generated from different regions of the light-emitting regions LR 1-LR 4 by blocking or absorbing light, so as to prevent light generated from any region from affecting light generated from other regions. In addition, in the present embodiment, the number of the control elements 114 in the light emitting element 100B corresponds to the number of the light emitting diode chips 104A to 104C, and the control elements 114 independently control the light emitting diode chips 104A to 104C, respectively. For example, in the light-emitting region LR1, the control device 114 can independently control the led chip 104A, in the light-emitting region LR2, the control device 114 can independently control the led chip 104B, in the light-emitting region LR3, the control device 114 can independently control the led chip 104C, and in the light-emitting region LR4, the control device 114 can independently control the led chip 104A.
Fig. 11A is a cross-sectional view taken along line II-II of fig. 9 according to another embodiment of the present invention. As described above, the control circuit may be directly disposed on the light mixing substrate 102. Therefore, in the present embodiment, the light source module 10B further includes a control circuit, and the control circuit is electrically connected between the light emitting elements 100B. In some embodiments, the control circuit may include a plurality of conductive layers 202A respectively disposed in the light emitting elements 100B. In other words, each light emitting element 100B further includes the conductive layer 202A. For example, as shown in fig. 11A, the conductive layer 202A may be disposed on the first surface 1021 of the light mixing substrate 102, and the led chips 104A-104C of the light emitting device 100B are electrically connected to each other through the conductive layer 202A. In addition, the control element 114 is electrically connected to the conductive layer 202A.
Fig. 11B is a cross-sectional view taken along line II-II of fig. 9 in accordance with another embodiment of the present invention. The embodiment of fig. 11B differs from the embodiment of fig. 11A in that: the light mixing substrate 102 in each light emitting device 100B is a growth substrate for the control device 114 and the led chips 104A to 104C. In other words, the control device 114 and the led chips 104A to 104C are grown on the same growth substrate. That is, the light mixing substrate 102 not only serves as a growth substrate for the LED chips 104A-104C, but also serves as a substrate for forming the control device 114, thereby saving the processing time and cost. In addition, the control element 114 is electrically connected to the conductive layer 202A.
As will be apparent from the above detailed description of the embodiments of the present invention, the light emitting device, the light source module and the backlight module of the present invention use the growth substrate of the led chip as the light mixing substrate of the light emitting device, so that the thickness of the light emitting device can be effectively reduced, and no additional secondary lens or other light guide device is required, thereby greatly reducing the optical distance of the backlight module and facilitating the design of the thin product.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (27)
1. A light-emitting element characterized by comprising:
a light mixing substrate having a first surface and a second surface opposite to the first surface; and
the light mixing substrate is a growth substrate of the plurality of light emitting diode wafers, the area of the light mixing substrate is larger than the sum of the areas of the plurality of light emitting diode wafers, and the distance between any two light emitting diode wafers is larger than the side length of any one light emitting diode wafer, so that the same or better brightness effect can be achieved by using a smaller number of light emitting diode wafers under the light mixing substrate with the same area.
2. The light-emitting device according to claim 1, wherein each of the led chips comprises a P-type semiconductor layer, an N-type semiconductor layer, a first electrode and a second electrode, the first electrode and the second electrode are disposed on a side of each of the led chips opposite to the light-mixing substrate and electrically connected to the P-type semiconductor layer and the N-type semiconductor layer, respectively.
3. The light-emitting element according to claim 1, further comprising:
a wavelength conversion layer disposed on the second surface of the light mixing substrate.
4. The light-emitting element according to claim 1, wherein a wavelength conversion material is coated on the second surface of the light-mixing substrate.
5. The light-emitting element according to claim 1, further comprising:
an optical film disposed above the second surface of the light-mixing substrate.
6. The light-emitting device according to claim 1, wherein the second surface of the light-mixing substrate has a patterned structure.
7. The light-emitting element according to claim 1, wherein the thickness of the light-emitting element is less than 10 mm.
8. The light-emitting element according to claim 1, wherein the thickness of the light-emitting element is less than 5 mm.
9. The light-emitting element according to claim 1, wherein the thickness of the light-emitting element is less than 2 mm.
10. The light-emitting device according to claim 1, wherein the light-mixing substrate comprises sapphire, glass or transparent plastic material.
11. The light-emitting element according to claim 1, wherein a material of the light-mixing substrate includes a material containing light-diffusing particles.
12. The light-emitting element according to claim 1, wherein the material of the light-emitting diode chip comprises a gallium nitride or aluminum indium gallium phosphide quaternary material.
13. A light source module, comprising:
a circuit board; and
the light-emitting device of claim 1, wherein the light-emitting devices are flip-chip mounted on the circuit board.
14. The light source module as claimed in claim 13, wherein the circuit board includes a conductive layer, and the led chips of the light emitting elements are electrically connected to each other through the conductive layer.
15. The light source module of claim 14, wherein at least two of the light emitting elements are electrically connected to each other through the conductive layer.
16. A light source module, comprising:
a control circuit; and
the light-emitting devices of claim 1, wherein the control circuit is electrically connected between the light-emitting devices.
17. The light source module of claim 16, wherein each of the light emitting devices further comprises a conductive layer, and the led chips in each of the light emitting devices are electrically connected to each other through the conductive layer.
18. The light source module of claim 13 or 16, wherein each of the light emitting devices further comprises at least one control device electrically connected to at least one of the led chips in each of the light emitting devices.
19. The light source module of claim 18, wherein the light mixing substrate in each of the light emitting devices is a growth substrate of the control device and the led chip.
20. The light source module of claim 14 or 17, wherein each of the light emitting elements further comprises a control element, and the control element is electrically connected to the conductive layer.
21. The light source module of claim 14 or 17, wherein each of the light emitting elements further comprises a plurality of control elements, and the plurality of control elements are electrically connected to the conductive layer.
22. The light source module of claim 21, wherein the number of the control elements in each of the light emitting elements corresponds to the number of the light emitting diode chips, and the control elements independently control the light emitting diode chips, respectively.
23. The light source module of claim 13 or 16, wherein each of the light emitting devices further includes a light blocking structure and a plurality of control devices, the light blocking structure is disposed in the light mixing substrate to define a plurality of light emitting regions, and each of the light emitting regions includes one of the led chips and one of the control devices.
24. The light source module according to claim 13 or 16, further comprising:
and the wavelength conversion layer is arranged on the light-emitting element.
25. The light source module according to claim 13 or 16, wherein the second surface of the light mixing substrate in each of the light emitting elements is coated with a wavelength conversion material.
26. A backlight module, comprising:
the light source module of claim 24, wherein the overall thickness of the backlight module is less than 10 mm.
27. A backlight module, comprising:
the light source module of claim 25, wherein the overall thickness of the backlight module is less than 10 mm.
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| CN201711011787.1A CN109713104B (en) | 2017-10-25 | 2017-10-25 | Light-emitting element, light source module and backlight module |
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