CN113169076A - Electronic device and method of manufacturing the same - Google Patents

Electronic device and method of manufacturing the same Download PDF

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Publication number
CN113169076A
CN113169076A CN201880097629.9A CN201880097629A CN113169076A CN 113169076 A CN113169076 A CN 113169076A CN 201880097629 A CN201880097629 A CN 201880097629A CN 113169076 A CN113169076 A CN 113169076A
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CN
China
Prior art keywords
elastic layer
rigid substrate
electronic device
laser
functional units
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Pending
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CN201880097629.9A
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Chinese (zh)
Inventor
袁泽
康佳昊
魏鹏
管曦萌
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Shenzhen Royole Technologies Co Ltd
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Shenzhen Royole Technologies Co Ltd
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Publication of CN113169076A publication Critical patent/CN113169076A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting

Abstract

An electronic device and a method of manufacturing the same. The manufacturing method of the electronic device comprises the following steps: providing a rigid substrate (10) (S101); arranging an electronic device (1) to be peeled on the rigid substrate (10), wherein the electronic device (1) comprises a plurality of function units (20) which are arranged at intervals and an elastic layer (30) which coats the function units (20) (S103); and performing a release process to separate the plurality of functional units (20) from the rigid substrate (10) together with the elastic layer (30) (S105). The manufacturing method of the electronic device can be compatible with the existing manufacturing technologies of semiconductors, display panels and the like, and improves the production efficiency.

Description

Electronic device and method of manufacturing the same Technical Field
The invention relates to the technical field of electronics, in particular to an electronic device and a manufacturing method thereof.
Background
With the development of electronic technology, the demands of consumers for electronic devices are more and more diversified and personalized. The form of the electronic device is changed, that is, the original straight board is gradually changed into a folding type, a sliding type, etc., and the electronic device is further changed into a flexible type or even an elastic type. In a conventional method for manufacturing an electronic device, a patterned conductive line is formed on an elastic substrate, and then a chip is fixed on the substrate by transferring a stamp to be connected to the conductive line. However, this manufacturing method is not compatible with the existing manufacturing techniques of semiconductors, display panels, etc., resulting in low production efficiency.
Disclosure of Invention
In view of the above problems in the prior art, the present invention provides an electronic device with high production efficiency and a method for manufacturing the same.
In order to achieve the above object, the embodiments of the present invention provide the following technical solutions:
in a first aspect, the present invention provides a method for manufacturing an electronic device, comprising the steps of:
providing a rigid substrate;
arranging an electronic device to be stripped on the rigid substrate, wherein the electronic device comprises a plurality of function units which are arranged at intervals and an elastic layer which coats the function units; and
and carrying out release treatment so as to separate the functional units from the rigid substrate together with the elastic layer.
In a second aspect, the present invention provides an electronic device, which is manufactured by the above manufacturing method of the electronic device, and the electronic device includes a plurality of function units arranged at intervals and an elastic layer covering the plurality of function units.
The manufacturing method of the electronic device comprises the steps that the electronic device to be stripped is arranged on the rigid substrate, and the electronic device comprises a plurality of function units which are arranged at intervals and an elastic layer which coats the function units; and then carrying out release treatment so as to separate the functional units and the elastic layer from the rigid substrate together. The electronic device of the invention can be compatible with the existing manufacturing technologies of semiconductors, display panels and the like, thereby improving the production efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing an electronic device according to a first embodiment of the present invention.
Fig. 2 is a schematic view of a manufacturing process of an electronic device according to a first embodiment of the present invention.
Fig. 3 is a flowchart of a method for manufacturing an electronic device according to a second embodiment of the invention.
Fig. 4 is a schematic view of a manufacturing process of an electronic device according to a second embodiment of the present invention.
Fig. 5 is a flowchart of a method for manufacturing an electronic device according to a third embodiment of the invention.
Fig. 6 is a schematic view of a manufacturing process of an electronic device according to a third embodiment of the present invention.
Fig. 7 is a flowchart of a method for manufacturing an electronic device according to a fourth embodiment of the invention.
Fig. 8 is a schematic view of a manufacturing process of an electronic device according to a fourth embodiment of the invention.
Fig. 9 is a flowchart of a method for manufacturing an electronic device according to a fifth embodiment of the invention.
Fig. 10 is a schematic view of a manufacturing process of an electronic device according to a fifth embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 and fig. 2 together, fig. 1 is a flowchart illustrating a method for manufacturing an electronic device according to an embodiment of the present invention, and fig. 2 is a flowchart illustrating a process for manufacturing an electronic device according to an embodiment of the present invention. The method of manufacturing the electronic device 1 comprises the following steps.
Step S101, a rigid substrate is provided.
The rigid substrate 10 may be, but is not limited to, a glass substrate, a metal substrate, or a ceramic substrate. Preferably, the rigid substrate 10 is a thin glass substrate to facilitate the rapid separation of the electronic device 1 from the rigid substrate 10 after fabrication. Specifically, the glass substrate is, for example, but not limited to, soda lime glass, alkali-free glass, phosphoric acid-based glass, or quartz. The rigid substrate 10 is used to support the electronic device 1 during the fabrication process of the electronic device 1. The rigid substrate 10 is made of a transparent material so that the laser light can irradiate the electronic device 1 through the rigid substrate 10, thereby achieving peeling of the electronic device 1 from the rigid substrate 10.
Step S103, arranging the electronic device to be stripped on the rigid substrate.
In the present embodiment, the electronic device 1 includes a plurality of functional units 20 arranged at intervals and an elastic layer 30 covering the plurality of functional units 20. The functional unit 20 is, for example, but not limited to, a flexible display unit, a microchip, a touch sensor, or other functional elements. In the present embodiment, each of the functional units 20 includes a base 21 and a functional device 22, and a space 201 is formed between two adjacent bases 21 and the rigid substrate 10. In which a substrate 21 is stacked with a functional device 22. In some embodiments, each functional unit 20 includes only functional devices 22, i.e., the substrate 21 may be omitted.
In one embodiment, the electronic device 1 to be peeled is disposed on the rigid substrate 10, and specifically includes:
a plurality of function units 20 arranged at intervals are arranged on the rigid substrate 10;
an elastic layer 30 is covered on the side of the functional unit 20 facing away from the rigid substrate 10 to produce the electronic component 1 to be peeled.
It can be understood that, the disposing of the plurality of functional units 20 arranged at intervals on the rigid substrate 10 specifically includes:
sequentially arranging a plurality of bases 21 and functional devices 22 which are arranged at intervals on the rigid substrate 10 to obtain a plurality of functional units 20; or
Arranging a plurality of functional devices 22 arranged at intervals on the rigid substrate 10 to obtain a plurality of functional units 20; or
A base layer (not shown) and a plurality of functional devices 22 arranged at intervals are sequentially arranged on the rigid substrate 10;
the base layer is patterned to produce a number of the functional units 20.
In this embodiment, the substrate layer may be patterned by using a conventional patterning process. Specifically, in this embodiment, the base layer is subjected to photolithography and etching by using a plurality of functional devices 22 as masks or by using a mask separately stacked with the functional devices 22. A layer of photoresist is applied over several of the functional devices 22 prior to photolithography and etching. In this way, the acting light is projected onto the mask, and the photoresist is exposed and developed, so that the base layer exposed on the opposite sides of the photoresist is etched to obtain a plurality of bases 21 arranged at intervals, that is, a plurality of functional units 20 arranged at intervals are disposed on the rigid substrate 10.
In the present embodiment, the substrate 21 is made of a transparent material. In this embodiment, the substrate 21 may be a flexible substrate or a rigid substrate. The substrate 21 is, for example, but not limited to, one of a Polyimide (PI) substrate, a Colorless transparent Polyimide (CPI) substrate, a polyethylene terephthalate (PET) substrate, a Polyamide (PA) substrate, a Polycarbonate (PC) substrate, a Polyethersulfone (PES) substrate, a polyethylene naphthalate (PEN) substrate, a polymethyl methacrylate (PMMA) substrate, a Cyclic Olefin Copolymer (COC) substrate, a Cyclic Olefin Polymer (COP) substrate, a glass substrate, and a silicon substrate.
The functional device 22 includes, but is not limited to, a microchip, a communication bus. The microchip is an electronic device having a specific function. The microchip is, for example, but not limited to, an electronic device having a processing function, a memory function, a calculation function, a display function, a sensing function, a communication function, or the like. The microchip includes but is not limited to: circuits fabricated directly on the substrate 21, packaged microchips transferred to the substrate 21, unpackaged microchips transferred to the substrate 21. The communication bus is used for realizing communication connection among the electronic devices. In the present embodiment, the electronic device 1 is a display panel. Examples of the Display panel include, but are not limited to, products or components having specific functions, such as a Liquid Crystal Display (LCD) panel, a Quantum Dot Display (QLED) panel, an electronic paper (E-paper Display, EPD), a Touch screen (Touch panel), a flexible solar cell (PV) panel, and a Radio Frequency tag (Radio Frequency Identification, RFID).
Optionally, the substrate 21 has a lower coefficient of elasticity than the elastic layer 30, so that the substrate 21 can be used to support and protect the functional device 22 when the electronic device 1 is in a deformed state, such as stretching or bending. Since the elastic layer 30 is filled in the space 201 between the substrates 21 and covers the substrates 21 and the functional devices 22, the electronic device 1 is more flexible in deformation and the electronic device 1 is protected. It is understood that the width of the space 201 can be designed according to the required dimension of the patterning process of the functional device 22 and the density of the functional device 22.
In the present embodiment, the elastic layer 30 contains an elastomer. The elastomer is preferably a material in which the polymer chains or lattice structure inside the elastomer can be stretched by an external force. The elastomer is, for example, but not limited to, one of natural rubber, synthetic rubber, thermoplastic elastomer, or a combination thereof. The natural rubber is, for example, polyisoprene. The synthetic rubber includes, but is not limited to, styrene butadiene rubber, cis-butadiene rubber, neoprene rubber, nitrile rubber, butyl rubber, or silicone rubber. The silica gel is, for example, Polydimethylsiloxane (PDMS). The thermoplastic elastomer includes, but is not limited to, a styrenic block copolymer, a thermoplastic olefin, a thermoplastic vulcanizate, a thermoplastic polyurethane, a thermoplastic copolyester, or a thermoplastic polyamide.
Optionally, because some elastomers have a low laser absorptivity, the elastic layer 30 is also doped with a laser absorber in order to increase the laser absorptivity. The laser absorber is, for example, but not limited to, one of salicylate, benzophenone, benzotriazole, substituted acrylonitrile, triazine, or a combination thereof.
In a specific embodiment, an elastic layer 30 is covered on a side of the functional unit 20 facing away from the rigid substrate 10 to obtain the electronic device 1 to be peeled, specifically including:
preparing liquid glue containing elastomer and laser absorber;
the liquid glue is coated on the rigid substrate 10 and the plurality of functional units 20 and cured, so that the elastic layer 30 is formed on the rigid substrate 10 and coats the functional units 20, thereby obtaining the electronic device 1 to be peeled.
In another specific embodiment, an elastic layer 30 is covered on a side of the functional unit 20 facing away from the rigid substrate 10 to obtain the electronic device 1 to be peeled, specifically including:
preparing in advance the elastic layer 30 in a solid state containing an elastomer and a laser absorber;
laminating the elastic layer 30 with the rigid substrate 10 and the functional unit 20, and applying pressure/heat to attach the elastic layer 30 to the rigid substrate 10 and to cover the base 21 and the functional device 22 to obtain the electronic device 1 to be peeled.
In other embodiments, an elastic layer 30 covers a side of the functional unit 20 facing away from the rigid substrate 10 to obtain the electronic device 1 to be peeled, specifically including:
depositing an elastic layer 30 containing an elastomer and a laser absorber on the rigid substrate 10 and the plurality of functional units 20, so that the elastic layer 30 is formed on the rigid substrate 10 and covers the substrate 21 and the functional device 22, thereby obtaining the electronic device 1 to be peeled.
It is understood that deposition processes include, but are not limited to, chemical vapor deposition, pulsed laser deposition, and atomic layer deposition.
Step S105, performing a release process to separate the functional units from the rigid substrate together with the elastic layer.
In this embodiment, the releasing process is performed to separate the functional units 20 and the elastic layer 30 from the rigid substrate 10, and specifically includes:
laser ablation of the elastic layer 30 and the base 21 is used to separate the functional units 20 from the rigid substrate 10 together with the elastic layer 30.
Specifically, the electronic component 1 is separated from the rigid substrate 10, and the back surface of the rigid substrate 10 can be irradiated with laser scanning. Since the rigid substrate 10 has optical transparency, laser light is irradiated on the base 21 and the elastic layer 30 between the rigid substrate 10 and the electronic device 1. Further, since the elastic layer 30 is doped with the laser light absorber, the elastic layer 30 can absorb laser light of a specific wavelength, and thus the absorption rate of the elastic layer 30 to the laser light is greatly increased to separate the elastic layer 30 from the rigid substrate 10. Alternatively, the laser may scan from one end of the rigid substrate 10 to the other end, so that the rigid substrate 10 is peeled off the base 21 and the elastic layer 30. In this embodiment, the laser may be a gas laser or a solid laser. The solid-state laser is, for example, a semiconductor laser. The gas laser is, for example, but not limited to, an excimer laser, Nd-YAG laser, Ar laser, CO2 laser, He-Ne laser, or the like.
In the present embodiment, the laser absorptance of the substrate 21 is substantially the same as that of the elastic layer 30. Thus, when the elastic layer 30 is irradiated by laser scanning, the substrate 21 and the elastic layer 30 are simultaneously laser-ablated to form a thin layer, and the ablated substrate 21 and the elastic layer 30 are positioned on the same plane at the side close to the ablation surface, so that the ablated substrate 21 and the elastic layer 30 jointly form the electronic device 1. Optionally, in this embodiment, the thickness of the substrate 21 and the thickness of the elastic layer 30 are both greater than the depth of the laser ablation.
Referring to fig. 3 and 4 together, fig. 3 is a flow chart illustrating a method for manufacturing an electronic device according to a second embodiment of the present invention, and fig. 4 is a flow chart illustrating a process for manufacturing an electronic device according to the second embodiment of the present invention. The method of manufacturing the electronic device 1 comprises the following steps.
Step S301, a rigid substrate is provided.
Specifically, reference may be made to the method step S101 in the first embodiment, which is not described herein again.
Step S303, a plurality of function units arranged at intervals are disposed on the rigid substrate.
Specifically, reference may be made to the method step S103 in the first embodiment, which is not described herein again.
Step S305, forming a first elastic layer on the rigid substrate, and covering a plurality of functional units with the first elastic layer.
In the present embodiment, the elastic layer 30 includes a first elastic layer 31. The first elastic layer 31 contains the elastomer and the laser absorber therein, so that the first elastic layer 31 can absorb laser light of a specific wavelength. It is understood that the method for forming the first elastic layer 31 on the rigid substrate 10 includes processes of coating, laminating, and depositing, and specifically, the method for forming the elastic layer 30 in the first embodiment may be referred to, and will not be described herein again.
Step S307, forming a second elastic layer on the first elastic layer.
In this embodiment, the elastic layer 30 further includes a second elastic layer 32. The second elastic layer 32 contains the elastomer therein. It can be understood that the method for forming the second elastic layer 32 on the first elastic layer 31 includes processes of coating, laminating, and depositing, and specifically, refer to the method for forming the elastic layer 30 in the first embodiment, and will not be described herein again. Except that the second elastic layer 32 is not doped with a laser absorber.
The laser absorption rate of the second elastic layer 32 is smaller than that of the first elastic layer 31. It will be appreciated that the laser absorption of the first elastic layer 31 is approximately the same as the laser absorption of the substrate 21, while the laser absorption of the second elastic layer 32 is less than the laser absorption of the substrate 21. Thus, when the elastic layer 30 is irradiated by laser scanning, the first elastic layer 31 and the substrate 21 are simultaneously laser-ablated to form a thin layer, so that the first elastic layer 31, the second elastic layer 32 and the functional unit 20 coated on the substrate 21 after ablation jointly form the electronic device 1. Optionally, in this embodiment, the thickness of the first elastic layer 31 is less than or equal to the depth of the laser ablation, and the thickness of the first elastic layer 31 is less than the thickness of the substrate 21.
Step S309, a release process is performed to separate the functional unit from the rigid substrate together with the first elastic layer and the second elastic layer covering the functional unit.
In this embodiment, the release process is performed to separate the functional unit 20 from the rigid substrate 10 together with the first elastic layer 31 and the second elastic layer 32 covering the functional unit 20, and specifically includes:
the first elastic layer 31 and the base 21 are ablated with a laser, so that the functional unit 20 is separated from the rigid substrate 10 together with the first elastic layer 31 and the second elastic layer 32 covering the functional unit 20.
Specifically, reference may be made to the method step S105 in the first embodiment, which is not described herein again.
Referring to fig. 5 and 6 together, fig. 5 is a flowchart illustrating a method for manufacturing an electronic device according to a third embodiment of the present invention, and fig. 6 is a flowchart illustrating a process for manufacturing an electronic device according to the third embodiment of the present invention. The method of manufacturing the electronic device 1 comprises the following steps.
Step S501, a rigid substrate is provided.
Specifically, reference may be made to the method step S101 in the first embodiment, which is not described herein again.
Step S503, disposing a plurality of function units arranged at intervals on the rigid substrate.
Specifically, reference may be made to the method step S103 in the first embodiment, which is not described herein again.
Step S505 is to form a sacrificial layer on the rigid substrate, and to coat the sacrificial layer with a plurality of functional units.
The method for forming the sacrificial layer 40 on the rigid substrate 10 includes coating, laminating, and depositing. In the third embodiment, a laser light absorbing material is included in the sacrificial layer 40 so that the sacrificial layer 40 can absorb laser light of a specific wavelength. Further, the forming of the sacrificial layer 40 on the rigid substrate 10 may also be attaching the sacrificial layer 40 to the rigid substrate 10 through an adhesive layer.
In the present embodiment, the sacrificial layer 40 is made of a transparent material. The sacrificial layer 40 is, for example, but not limited to, one of inorganic materials such as a PI substrate, a CPI substrate, a PE substrate, a PA substrate, a PC substrate, a PEs substrate, a PEN substrate, a PMMA substrate, a COC substrate, a COP substrate, Indium Tin Oxide (ITO), and a metal. In the present embodiment, the sacrificial layer 40 and the substrate 21 are made of the same material and are both PI substrates.
Step S507, forming an elastic layer on the sacrificial layer.
In this embodiment, the sacrificial layer 40 is disposed between the rigid substrate 10 and the elastic layer 33. It is understood that the method of forming the elastic layer 33 on the sacrificial layer 40 includes coating, laminating, and depositing.
The laser light absorber is not doped in the elastic layer 33, and the elastomer in the elastic layer 33 may be selected from materials having a low adhesion coefficient. The laser absorption rate of the elastic layer 33 is smaller than that of the sacrificial layer 40. It will be appreciated that the laser absorption of the sacrificial layer 40 is approximately the same as that of the substrate 21, while the laser absorption of the elastic layer 33 is less than that of the substrate 21. Thus, when the sacrificial layer 40 is irradiated by laser scanning, the sacrificial layer 40 and the substrate 21 are simultaneously laser-ablated by a thin layer, so that the ablated sacrificial layer 40, the elastic layer 33 and the functional unit 20 together constitute the electronic device 1. Optionally, in this embodiment, the thickness of the sacrificial layer 40 is less than or equal to the depth of the laser ablation, and the thickness of the sacrificial layer 40 is less than the thickness of the substrate 21.
Step S509, a release process is performed to separate the functional unit from the rigid substrate together with the sacrificial layer and the elastic layer covering the functional unit.
In this embodiment, the releasing process is performed to separate the functional unit 20 from the rigid substrate 10 together with the sacrificial layer 40 and the elastic layer 33 covering the functional unit 20, and specifically includes:
and (3) ablating the sacrificial layer 40 and the base 21 by using laser so as to separate the functional unit 20 from the rigid substrate 10 together with the sacrificial layer 40 and the elastic layer 33 which cover the functional unit 20.
Specifically, reference may be made to the method step S105 in the first embodiment, which is not described herein again.
Referring to fig. 7 and 8 together, fig. 7 is a flowchart illustrating a method for manufacturing an electronic device according to a fourth embodiment of the present invention, and fig. 8 is a flowchart illustrating a process for manufacturing an electronic device according to the fourth embodiment of the present invention. The method of manufacturing the electronic device 1 comprises the following steps.
Step S701 provides a rigid substrate.
Specifically, reference may be made to the method step S101 in the first embodiment, which is not described herein again.
Step S703 is to form a sacrificial layer on the rigid substrate.
It is understood that the method for forming the sacrificial layer 41 on the rigid substrate 10 includes coating, laminating, and depositing. In the fourth embodiment, a laser absorbing material is included in the sacrificial layer 41, and the material selection of the sacrificial layer 41 can be referred to the sacrificial layer 40 described in the third embodiment. The sacrifice layer 41 is stacked on the rigid substrate 10.
Step S705, forming a plurality of function units arranged at intervals on the sacrificial layer.
Specifically, forming a plurality of the functional units 20 arranged at intervals on the sacrificial layer 41 specifically includes:
sequentially arranging a plurality of substrates 21 and functional devices 22 which are arranged at intervals on the sacrificial layer 41 to obtain a plurality of functional units 20; or
Arranging a plurality of functional devices 32 arranged at intervals on the sacrificial layer 41 to obtain a plurality of functional units 20; or
Sequentially forming a base layer and a plurality of functional devices 32 arranged at intervals on the sacrificial layer 41;
the base layer is patterned to produce a number of the functional units 20.
In this embodiment, a plurality of substrates 21 are disposed on the sacrificial layer 41 at intervals, and a functional device 22 is disposed on a side of each substrate 21 away from the sacrificial layer 41, so as to form a functional unit 20 on the sacrificial layer 41. The substrate 21 is stacked with the functional device 22. In other embodiments, the functional unit 20 includes only a plurality of functional devices 22 arranged at intervals, i.e., the substrate 21 may be omitted.
It is understood that in one embodiment, the sacrificial layer 41 and the base 21 are sequentially formed over the rigid substrate 10 by different processes. In other embodiments, the sacrificial layer 41 and the substrate 21 may be integrally formed. That is, the base 21 is formed on the rigid substrate 10, and the base 21 is patterned to form the base 21 and the sacrificial layer 41 having different thicknesses. The thickness of the substrate 21 is greater than the thickness of the sacrificial layer 41.
Step S707, forming an elastic layer on the sacrificial layer, and making the elastic layer cover the functional units.
In the present embodiment, the elastic layer 33 is not doped with the laser absorber, and the elastomer in the elastic layer 33 can be selected from materials with a low adhesion coefficient. The laser absorption rate of the elastic layer 33 is smaller than that of the sacrificial layer 41. It is understood that the laser absorption rate of the sacrificial layer 41 is greater than that of the elastic layer 33. Thus, when the laser scanning irradiates the sacrificial layer 41, the sacrificial layer 41 is laser ablated by a thin layer. After ablation of the sacrificial layer 41, the elastic layer 33 and the functional unit 20 together constitute the electronic device 1.
Step S709 is to perform a release process to separate the functional units from the rigid substrate together with the elastic layer.
In this embodiment, the releasing process is performed to separate the functional units 20 from the rigid substrate 10 together with the elastic layer 33, and specifically includes:
the sacrificial layer 41 is ablated by laser to separate the functional units 20 from the rigid substrate 10 together with the elastic layer 33.
Optionally, the rigid substrate 10 is made of a transparent material so that laser light can irradiate the electronic device 1 through the rigid substrate 10, thereby peeling the electronic device 1 from the rigid substrate 10. It will be appreciated that the electronic device 1 is detached from the rigid substrate 10 and the back of the rigid substrate 10 can be irradiated with a laser scan. Since the rigid substrate 10 has optical transparency, laser light is irradiated onto the sacrifice layer 41. Further, in order to increase the laser light absorption rate of the sacrificial layer 41 and separate the sacrificial layer 41 from the rigid substrate 10, a laser light absorber may be doped into the sacrificial layer 41. Alternatively, the laser may be scanned from one end of the rigid substrate 10 to the other end so that the functional unit 20 is peeled off the rigid substrate 10. In this embodiment, the laser may be a gas laser or a solid laser. The solid-state laser is, for example, a semiconductor laser. The gas laser is, for example, but not limited to, an excimer laser, Nd-YAG laser, Ar laser, CO2 laser, He-Ne laser, or the like. The laser absorber is, for example, but not limited to, one of salicylate, benzophenone, benzotriazole, substituted acrylonitrile, triazine, or a combination thereof.
It is understood that, in some embodiments, a release process is performed to separate the functional units 20 from the rigid substrate 10 together with the elastic layer 33, which specifically includes:
the sacrificial layer 41 is dissolved by a solvent to separate the functional units 20 from the rigid substrate 10 together with the elastic layer 33.
In the present embodiment, the sacrificial layer 41 includes, but is not limited to, one of an inorganic salt compound, an inorganic oxide, an organic polymer compound, a metal, or a combination thereof. In this embodiment, the dissolving agent is a liquid. In other embodiments, the dissolving agent may also be a gas or light, such as a laser. The dissolving agent includes, but is not limited to, at least one of water, acid, alkali, organic solution, developing solution, or a combination thereof. Preferably, the inorganic salt compound is selected from water-soluble materials such as potassium salt, sodium salt, ammonium salt, nitrate, acetate, and the like; the inorganic oxide is selected from materials which are easily soluble in acid or alkali, such as alkali oxides, acid oxides or amphoteric oxides; the organic high molecular compound is selected from materials which are easily soluble in water, organic solvents or developers, such as epoxy resin; the metal is selected from metal materials which are easily soluble in acid or alkali, such as aluminum, potassium and the like.
Referring to fig. 9 and 10 together, fig. 9 is a flowchart illustrating a method for manufacturing an electronic device according to a fifth embodiment of the present invention, and fig. 10 is a flowchart illustrating a process for manufacturing an electronic device according to the fifth embodiment of the present invention. The method of manufacturing the electronic device 1 comprises the following steps.
Step S901, a rigid substrate is provided.
Specifically, reference may be made to the method step S101 in the first embodiment, which is not described herein again.
Step S903, arranging a plurality of function units arranged at intervals on the rigid substrate.
Specifically, reference may be made to the method step S103 in the first embodiment, which is not described herein again.
Step S905 is to form an elastic layer on the rigid substrate, and to make the elastic layer cover a plurality of the functional units.
Specifically, reference may be made to the method step S103 in the first embodiment, which is not described herein again. In contrast, in the present embodiment, the laser light absorber is not doped in the elastic layer 34, and the elastic layer 34 is made of a material having a low adhesion coefficient.
In step S907, a release process is performed to separate the functional unit from the rigid substrate together with the elastic layer.
The preset area 100 includes a first area 101 and a second area 102. It is understood that, in the embodiment of the present invention, the first region 101 is a region where the base 21 is in contact with the rigid substrate 10. The second region 102 is the region where the elastic layer 34 is in contact with the rigid substrate 10.
In an embodiment, the releasing process is performed to separate the functional unit 20 and the elastic layer 34 from the rigid substrate 10, and specifically includes:
the first region 101 (i.e., the substrate 21) is ablated by laser, and an external force is applied to the elastic layer 34, so that the functional unit 20 is separated from the rigid substrate 10 together with the elastic layer 34.
In the present embodiment, the substrate 21 is located in the first region 101. The adhesion between the elastic layer 34 and the rigid substrate 10 is smaller than the adhesion between the functional unit 20 and the rigid substrate 10, i.e. the elastic layer 34 is made of an elastomer with low adsorption force, such as PDMS. Specifically, the laser scans and irradiates only the area where the base 21 and the rigid substrate 10 are in contact, and applies a mechanical external force to the elastic layer 34, so that the ablated base 21 and the elastic layer 34 are peeled off from the rigid substrate 10 together, and the ablated base 21 and the elastic layer 30 together constitute the electronic device 1. Since the laser only ablates the substrate 21, the ablated substrate 21 and the elastic layer 34 are in different planes on the side near the ablation surface.
In another embodiment, the releasing process is performed to separate the functional unit 20 and the elastic layer 34 from the rigid substrate 10, and specifically includes:
the second region 102 (i.e., the elastic layer 34 in contact with the rigid substrate 10) is ablated with a laser, and an external force is applied to the elastic layer 34, so that the functional unit 20 is separated from the rigid substrate 10 together with the elastic layer 34. Wherein the adhesion between the elastic layer 34 and the rigid substrate 10 is greater than the adhesion between the functional unit 20 and the rigid substrate 10. In the present embodiment, the elastic layer 34 may be doped with a laser absorber, and the elastomer in the elastic layer 34 may be selected from materials with higher adhesion coefficients. The side of the base 21 contacting the rigid substrate 10 is a non-stick surface. In other embodiments, the adhesion between the base 21 and the rigid substrate 10 is low, i.e., a material with a low adhesion coefficient can be used for the base 21. In other embodiments, the elastic layer 34 has stronger adhesion force relative to the functional unit 20 than the rigid substrate 10 during the temperature rise process of the elastic layer 34 due to the laser light absorption, and the elastic layer 34 maintains low adhesion force or no adhesion force to the rigid substrate 10, thereby achieving the separation of the functional unit 20 and the elastic layer 34 from the rigid substrate 10. In other specific embodiments, laser ablation of a predetermined area 100 of the electronic device 1 is used to separate the functional unit 20 from the rigid substrate 10 together with the elastic layer 34, which specifically includes:
the first area 101 (i.e., the base 21) is ablated with a first laser and the second area 102 (i.e., the elastic layer 34 in contact with the rigid substrate 10) is irradiated with a second laser scan to separate the functional units 20 from the rigid substrate 10 along with the elastic layer 34. Wherein the characteristic parameters of the first laser are different from the characteristic parameters of the second laser, such as, but not limited to, the energy density, wavelength, and scanning times of the laser. It will be appreciated that in one embodiment, the first laser and the second laser may scan both the elastic layer 34 and the substrate 21. In other embodiments, the first laser and the second laser may scan and irradiate a predetermined region of the electronic device 1 at predetermined time intervals.
The embodiment of the invention provides an electronic device and a manufacturing method thereof. In the manufacturing process of the electronic device, the electronic device to be stripped is arranged on the rigid substrate, wherein the electronic device comprises a plurality of function units which are arranged at intervals and an elastic layer which coats the function units; and carrying out laser ablation treatment to separate the functional units from the rigid substrate together with the elastic layer. The electronic device of the invention can be compatible with the existing manufacturing technologies of semiconductors, display panels and the like, thereby improving the production efficiency.
In addition, because the plurality of functional units are coated by the elastic layer, the elastic layer not only can provide elasticity for the electronic device, but also can be separated from the functional units by laser, namely, the elastic layer and the functional units are separated from the rigid substrate at the same time, so that the electronic device can be easily separated from the rigid substrate to avoid the damage of the electronic device, the electronic device is further protected, the mass production of the electronic device is realized by the laser separation, and the laser separation process has the advantages of yield and yield.
The above embodiments of the present invention are described in detail, and the principle and the implementation of the present invention are explained by applying specific embodiments, and the above description of the embodiments is only used to help understanding the method of the present invention and the core idea thereof; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in view of the above, the content of the present specification should not be construed as a limitation to the present invention.

Claims (20)

  1. A method for manufacturing an electronic device, comprising the steps of:
    providing a rigid substrate;
    arranging an electronic device to be stripped on the rigid substrate, wherein the electronic device comprises a plurality of function units which are arranged at intervals and an elastic layer which coats the function units; and
    and carrying out release treatment so as to separate the functional units from the rigid substrate together with the elastic layer.
  2. The method for manufacturing an electronic device according to claim 1, wherein the step of disposing the electronic device to be peeled on the rigid substrate specifically comprises:
    arranging a plurality of functional units which are arranged at intervals on the rigid substrate;
    covering an elastic layer on one side of the functional unit, which is far away from the rigid substrate, so as to obtain the electronic device to be stripped.
  3. The method for manufacturing an electronic device according to claim 2, wherein the step of disposing a plurality of functional units arranged at intervals on the rigid substrate specifically comprises:
    sequentially arranging a plurality of substrates and functional devices which are arranged at intervals on the rigid substrate to prepare a plurality of functional units; or
    Arranging a plurality of functional devices which are arranged at intervals on the rigid substrate to prepare a plurality of functional units; or
    Sequentially arranging a basal layer and a plurality of functional devices arranged at intervals on the rigid substrate;
    and patterning the substrate layer to obtain a plurality of functional units.
  4. The method for manufacturing an electronic device according to claim 2, wherein covering an elastic layer on a side of the functional unit facing away from the rigid substrate to manufacture the electronic device to be peeled off specifically comprises:
    and arranging the elastic layer on the rigid substrate, so that the elastic layer covers the functional units to prepare the electronic device to be stripped, wherein the elastic layer contains an elastomer.
  5. The method of manufacturing an electronic device according to claim 4, wherein the elastomer is selected from one of natural rubber, synthetic rubber, thermoplastic elastomer, or a combination thereof; the natural rubber comprises polyisoprene, the synthetic rubber comprises styrene-butadiene rubber, chloroprene rubber, nitrile rubber, butyl rubber or silica gel, and the thermoplastic elastomer comprises styrene block copolymer, thermoplastic olefin, thermoplastic vulcanized rubber, thermoplastic polyurethane, thermoplastic copolyester or thermoplastic polyamide.
  6. The method for manufacturing an electronic device according to claim 2, wherein the disposing the elastic layer on the rigid substrate such that the elastic layer covers the plurality of functional units to manufacture the electronic device to be peeled comprises:
    and forming a first elastic layer on the rigid substrate, and coating the functional units with the first elastic layer to obtain the electronic device to be stripped, wherein the first elastic layer contains the elastomer and the laser absorber.
  7. The method of manufacturing an electronic device according to claim 6, wherein the laser absorber is selected from one of salicylates, benzophenones, benzotriazoles, substituted acrylonitriles, triazines, or a combination thereof.
  8. The method of manufacturing an electronic device according to claim 6, wherein after forming a first elastic layer on the rigid substrate and covering the plurality of functional units with the first elastic layer, the method further comprises:
    and forming a second elastic layer on the first elastic layer to prepare the electronic device to be stripped, wherein the second elastic layer contains the elastomer, and the laser absorption rate of the second elastic layer is less than that of the first elastic layer.
  9. The method of manufacturing an electronic device according to claim 8, wherein the releasing process is performed to separate the plurality of functional units from the rigid substrate together with the elastic layer, and specifically comprises:
    ablating the first elastic layer and the substrate by the laser to separate the functional unit from the rigid substrate together with the first elastic layer covering the functional unit; or is
    And ablating the first elastic layer and the substrate by the laser so as to separate the functional unit from the rigid substrate together with the first elastic layer and the second elastic layer which cover the functional unit.
  10. The method of fabricating an electronic device according to claim 2, further comprising:
    a sacrificial layer is disposed between the rigid substrate and the resilient layer.
  11. The method for manufacturing an electronic device according to claim 10, wherein a sacrificial layer is disposed between the rigid substrate and the elastic layer, and specifically comprises:
    forming the sacrificial layer on the rigid substrate, and enabling the sacrificial layer to cover a plurality of functional units;
    the disposing the elastic layer on the rigid substrate to make the elastic layer cover the plurality of functional units to obtain the electronic device to be peeled off specifically includes:
    and arranging the elastic layer on the sacrificial layer, and enabling the elastic layer to cover the sacrificial layer.
  12. The method of manufacturing an electronic device according to claim 11, wherein the releasing process is performed to separate the plurality of functional units from the rigid substrate together with the elastic layer, and specifically comprises:
    and ablating the sacrificial layer and the substrate by the laser so as to separate the functional units from the rigid substrate together with the sacrificial layer and the elastic layer which are covered on the functional units.
  13. The method for manufacturing an electronic device according to claim 10, wherein a sacrificial layer is disposed between the rigid substrate and the elastic layer, and specifically comprises:
    forming the sacrificial layer on the rigid substrate, and laminating the sacrificial layer and the rigid substrate;
    the disposing the elastic layer on the rigid substrate to make the elastic layer cover the plurality of functional units to obtain the electronic device to be peeled off specifically includes:
    and forming the elastic layer on the sacrificial layer, and enabling the elastic layer to cover a plurality of functional units.
  14. The method of manufacturing an electronic device according to claim 13, wherein the releasing process is performed to separate the plurality of functional units from the rigid substrate together with the elastic layer, and specifically comprises:
    laser ablating the sacrificial layer to separate a plurality of the functional units from the rigid substrate together with the elastic layer; or
    And dissolving the sacrificial layer by using a dissolving agent so as to separate the functional units from the rigid substrate together with the elastic layer.
  15. The method of manufacturing an electronic device according to claim 10, wherein a hardness of the sacrifice layer is larger than a hardness of the elastic layer.
  16. The method of claim 10, wherein the substrate and the sacrificial layer each comprise one of polyimide, colorless transparent polyimide, polyethylene terephthalate, polyamide, polycarbonate, polyethersulfone, polyethylene naphthalate, polymethyl methacrylate, cyclic olefin copolymer, cyclic olefin polymer, or a combination thereof.
  17. The method of manufacturing an electronic device according to claim 2, wherein the releasing process is performed to separate the plurality of functional units from the rigid substrate together with the elastic layer, and the method includes:
    and ablating a preset area of the electronic device by using the laser so as to enable the functional unit and the elastic layer to be mechanically stripped from the rigid substrate together.
  18. The method of manufacturing an electronic device according to claim 17, wherein the predetermined area includes a first area and a second area, the first area is an area where the substrate contacts the rigid substrate, the second area is an area where the elastic layer contacts the rigid substrate, and the laser ablation is performed on the predetermined area of the electronic device to mechanically peel the functional unit and the elastic layer from the rigid substrate together, the method including:
    and ablating the first area or the second area by using laser, and applying an external force on the elastic layer to mechanically peel the functional unit and the elastic layer from the rigid substrate together, wherein the adhesion force between the elastic layer and the rigid substrate is smaller or larger than that between the functional unit and the rigid substrate.
  19. The method of claim 18, wherein said ablating a predetermined area of said electronic device with said laser to mechanically peel said functional unit and said elastic layer together from said rigid substrate comprises:
    and ablating the first area by using a first laser, and ablating the second area by using a second laser so as to separate a plurality of functional units from the rigid substrate together with the elastic layer, wherein the characteristic parameter of the first laser is different from that of the second laser.
  20. An electronic device produced by the method for producing an electronic device according to any one of claims 1 to 19, comprising a plurality of functional units arranged at intervals and an elastic layer covering the plurality of functional units.
CN201880097629.9A 2018-12-24 2018-12-24 Electronic device and method of manufacturing the same Pending CN113169076A (en)

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