TWI591845B - Optoelectronic system - Google Patents

Description

Photoelectric system

The present invention relates to an optoelectronic system, and more particularly to an integrated illumination system.

The package structure of a photovoltaic element such as a light-emitting diode is mainly produced from a complicated single-chip package process. The unpackaged optoelectronic component can be packaged and then combined with other electronic components, such as capacitors, inductors, etc., and/or non-electronic components to form an optoelectronic system.

However, under the trend of miniaturization and thinning of electronic consumer products, the development of optoelectronic components has also moved toward smaller package sizes. Among them, Chip-Level Package (CLP) is one of the expected ways of designing semiconductors and optoelectronic components.

The invention discloses an optoelectronic system. The photoelectric structure comprises: a photoelectric element having a first width; a rubber material covering the photovoltaic element and having a second width, the second width being greater than the first width; and a phosphor powder structure formed on the photovoltaic element and the glue And a transparent substrate formed on the rubber material.

As illustrated in FIGS. 2A-2D, the manufacturing method of the photovoltaic system 100 according to an embodiment of the present invention is briefly described as follows: two or more system units 30 are initially disposed on a carrier 10; The spatial relationship between system units 30; the separation of system unit 30 from carrier 10; and the establishment of electrical connections 60 between system units 30 as desired. However, the order or selection of the above steps is not limited thereto, and the user may arrange according to the actual manufacturing environment or conditions.

In particular, photovoltaic system 100 in accordance with an embodiment of the present invention includes two or more system units 30 to form a transmission, conversion network of light energy and electrical energy. System unit 30 is located in the network and provides at least one of light or motor capability. For example, the optoelectronic system 100 can receive signals, electrical energy to output light, or receive light to output electrical energy, signals. In application, the photoelectric system 100 can be used for illumination, image display, image recognition, image reproduction, power output, data storage, machining, and the like.

Specifically, the photovoltaic system 100 is a light emitting diode (LED), a photodiode, a photoresist, a laser, an infrared emitter, and a solar cell (solar). Integrating, combining, and stacking at least one of the system units 30 having the optical motor capability. In addition, the photovoltaic system 100 can selectively accommodate non-photovoltaic system units 30 such as resistors, capacitors, inductors, diodes, and integrated circuits.

The carrier 10 provides a growth and bearing basis for the system unit 30. The candidate materials include but are not limited to germanium (Ge), gallium arsenide (GaAs), indium phosphate (InP), sapphire (Sapphire), tantalum carbide (SiC), germanium (Si), lithium aluminate (LiAlO2). Zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN), metal, glass, composite, diamond, CVD diamond, and diamond-like carbon (DLC).

In one embodiment of the invention, the complete or primary structure of one or more system units 30 is completed over the carrier 10. Specifically, the carrier 10 is the basis for the construction of this system unit 30. For example, one or more system units 30 are formed on the carrier 10 by chemical deposition, physical deposition, electroplating, synthesis, self-assembly, and the like. Further, in addition to the above manufacturing methods, cutting, grinding, polishing, lithography, etching, heat treatment, and the like may be selectively applied to the completion of the system unit 30.

The system unit 30 according to an embodiment of the present invention is an optoelectronic semiconductor formed by epitaxially growing a multilayer semiconductor layer on a growth substrate as the carrier 10. If more than two system units 30 are formed on a common substrate, adjacent system units 30 can be electrically and physically separated by forming trenches or insulating regions. However, the electrical layout between system units 30 can be achieved using internal connections, external connections, or both. Related documents can be found in the applicant's Taiwan Patent No. 434917 and No. I249148, which are hereby incorporated by reference.

Specifically, the system unit 30 includes at least a first electrical layer, a conversion portion, and a second electrical layer. The first electrical layer and the second electrical layer are different in electrical conductivity, polarity or dopant from each other, or are used to provide electrons and holes, respectively, in a single layer or multiple layers of semiconductor material ("multilayer "" means two or more layers, the same applies hereinafter.), the electrical selection may be a combination of at least any of p-type, n-type, and i-type. The conversion portion is located between the first electrical layer and the second electrical layer, and is a region where electrical energy and light energy may be converted or induced to be converted. Those who convert or induce light energy are such as light-emitting diodes, liquid crystal displays, and organic light-emitting diodes; those that convert or induce light energy are such as solar cells and photodiodes.

The system unit 30 according to another embodiment of the present invention is a light-emitting diode whose light-emitting spectrum can be adjusted by changing the physical or chemical elements of the semiconductor single layer or layers. Commonly used materials are such as aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, zinc oxide (ZnO) series and the like. The structure of the conversion unit is as follows: single heterostructure (SH), double heterostructure (DH), double-side double heterostructure (DDH), or multi-quantum (multi-quantum) Well; MQW). Furthermore, adjusting the logarithm of the quantum well can also change the wavelength of the illumination.

In one embodiment of the invention, one or more of the system units 30 are completed prior to being secured to the carrier 10, that is, the carrier 10 and the system unit 30 are separated from each other independently prior to establishing association. Specifically, the carrier 10 is supported by the system unit 30. For example, one or more system units 30 are secured to the carrier 10 by means of bonding means such as glue, metal, pressure, heat, or the like. Related documents can be found in the applicant's Taiwan Patent Nos. 311287, 456058, 474034, and 493286, which are incorporated herein by reference. In addition, the system unit 30 can be placed on the carrier 10 in a mechanical or manual manner during the establishment of the connection.

As shown in Figure 3, the completed or semi-finished photovoltaic system 100 can optionally be further coupled to an external body. The external system can be connected to either one or both sides of the photovoltaic system 100. In several embodiments, the optoelectronic system 100 is connected to the outer body 10a with the outer side of the electrical connection 60; the optoelectronic system 100 is connected to the outer body 10b with respect to the outer side of the electrical connection 60; or the optoelectronic system 100 The outer body 10a, 10b is connected to both the outer side having the electrical connection 60 and the opposite side thereof. However, the connection between the optoelectronic system 100 and the external body is not limited to the above, and any outer surface of the optoelectronic system 100 can be integrated with an appropriate external body. Specifically, an external system is a unit, a component, a device, a system, a structure, a component, or any combination of the above. For example, an external system-substrate, the material of which may be selected from the above-mentioned carrier 10, a circuit integration, an optoelectronic system, an active component, a passive component, a circuit component integration, or a fixture.

In one embodiment of the invention, a layer or structure 20 is formed between the system unit 30 and the carrier 10, as shown in FIG. This layer or structure 20 is intended to connect some or all of the system unit 30 to the carrier 10 for short or long term. Here, "short-term" means that the time is earlier or just before the completion of manufacture, delivery, or de-sealing of the photovoltaic system 100; "long-term" means that the time is later than the manufacture, delivery, or unsealing of the photovoltaic system 100. At this point, in other words, it is not necessary to separate the system unit 30 from the carrier 10. In particular, the layer or structure 20 is a gel, tape, metal monolayer, metal laminate, alloy, semiconductor, fixture, or any combination of the above. In addition, in addition to the connection function, the layer or structure 20 can selectively incorporate functions of reflection, anti-reflection, current blocking, diffusion barrier, stress relief, heat conduction, heat insulation and the like. For example, the layer or structure 20 includes a reflective surface, an interposer between the system unit 30 and the reflective surface, and an interposer between the reflective surface and the carrier 10. The upper interposer and the lower interposer may have the above-mentioned other functions in addition to the reflection function, such as connection, diffusion barrier, and the like.

In another embodiment of the invention, the system unit 30 and the material 40 are more engageable with the primary carrier 50, as shown in FIG. This bonding can be performed before or after any of steps 2A-2D. Preferably, the bonding is performed after the material 40 is introduced into the manufacturing process, such as after the steps of FIG. 2B, FIG. 2C, or FIG. 2D. If the secondary carrier 50 is bonded to the system unit 30 and the material 40 after the step of FIG. 2B, a relatively reliable intermediate structure can be provided for subsequent processes. The manner of joining the sub-carrier 50 to the system unit 30 can be referred to the description of FIG. 4 described above, and can also be a pressurizing means, a heating means, or a combination thereof. Specifically, a bonding layer 50a is formed between the sub-carrier 50 and the system unit 30 for the purpose of bonding the two.

In addition, in addition to the connection function, the bonding layer 50a can selectively incorporate functions of reflection, anti-reflection, current blocking, diffusion barrier, stress relief, heat conduction, heat insulation, etc. However, the achievement of these functions is not It is also necessary to adjust the composition, geometry, processing method, and the like of the sub-carrier 50 by means of additional components. For example, reflection, refraction, scattering, concentrating, collimating, and shielding structures are formed on at least one of the light-emitting surfaces of the sub-carrier 50. The light-emitting surface is a surface that is in contact with the system unit 30, a surface that is in contact with the material 40, and a surface that is in contact with the environmental medium. Specifically, the reflection, refraction, scattering, concentrating, and shielding structures are, for example, a mirror surface, a regular uneven surface, an irregular concave surface, a high refractive index difference interface, a photonic crystal, a concave lens, a convex lens, a Fresnel lens, At least one of the opaque surfaces.

Figure 6 illustrates an electrical connection of at least two system units 30 in a photovoltaic system 100 in accordance with an embodiment of the present invention. Here, the system unit 30 has two electrodes 301 facing in the same direction. The specific system unit 30 of the structure is a light-emitting diode, and more specifically, is formed on an insulator such as sapphire. Diode. In the figure (a), the two system units 30 are electrically connected in series by connecting the positive and negative electrodes via the wire 60a; in the figure (b), the two system units 30 are electrically connected by connecting the positive electrode via the wire 60a; In the middle, the two system units 30 are electrically connected by connecting the negative electrodes to the wires 60a.

Figure 7 illustrates an electrical connection of at least two system units 30 in a photovoltaic system 100 in accordance with another embodiment of the present invention. For specific implementations, reference may be made to the description of FIG. In the present embodiment, however, the electrical connection between system units 30 is achieved by the formation of internal connections 60b on system unit 30. One form of internal connection 60b is formed by depositing a metal material after forming isolation region 60b' on a set region of system unit 30.

Figure 8 illustrates an electrical connection of at least two system units 30 in a photovoltaic system 100 in accordance with yet another embodiment of the present invention. In Figures (a) and (b), the electrodes 301 of the system unit 30 are adjusted or spliced to substantially the same position, such as near or just to the surface of the material 40. In Figure (a), the two system units 30 are electrically connected in series by an electrical connection 60, such as a wire 60a or an internal connection 60b. In Figure (b), the two system units 30 are connected by The electrical connection 60, such as the wire 60a or the internal connection 60b, forms one of the electrical connections shown in the three equivalent circuit diagrams in the left diagram. In (c), the two system unit 30 is connected to a circuit carrier 60c to become part of an electrical network.

As illustrated in FIGS. 9A-9D, the manufacturing method of the photovoltaic system 100 according to another embodiment of the present invention is briefly described as follows: two or more system units 30 are initially disposed on a carrier 10 and are electrically formed. The connection 60 is on one side; the spatial relationship between the various system units 30 is maintained by the material 40; the system unit 30 is separated from the carrier 10; and the electrical connection 60 is formed on the other side of the system unit 30. However, the order or selection of the above steps is not limited thereto, and the user may arrange according to the actual manufacturing environment or conditions. In addition, the number or position of the electrical connections 60 on both sides of the two system units 30 in FIG. 9D is merely illustrative and not intended to limit the embodiments of the present invention, and the user can arrange and adjust according to the characteristics of the circuit. In addition, the description of the foregoing embodiments may be referred to or used in the present embodiments without conflict.

Figure 10 illustrates an electrical connection of at least two system units 30 in a photovoltaic system 100 in accordance with an embodiment of the present invention. In the figure (a), the two system units 30 are arranged in the same direction, and the positive and negative electrodes are respectively connected in parallel by the electrical connection 60, but the reversely disposed system unit 30 can also be formed by an appropriate layout of the electrical connection 60. In parallel (b), the two system units 30 are reversely arranged, and the positive and negative poles are connected by electrical connection 60 to form an anti-parallel connection. However, the system unit 30 in the same direction can also be electrically connected 60. The layout forms an anti-parallel. In Figure (c), the two system unit 30 is connected to a circuit carrier 60c and becomes part of an electrical network.

In an embodiment of the invention, the group of system units 30 that are limited to the material 40 may be further divided into equal or unequal subgroups, as shown in FIG. 11, but the number of system units 30 in the figure. The manner of connection and the manner of connection are only examples, and are not intended to limit the embodiments of the present invention. The system unit types disclosed in other embodiments in the present application may be adopted in this embodiment without any conflict. In addition, the electrical connection between the various system units 30 in the subgroup can refer to other related embodiments of the present invention. The means for dividing the subgroups may be selected from chemical formulas, physical formulas, or a combination thereof. Chemical means are such as etching. Physical means such as mechanical cutting, grinding, laser cutting, water cutting, thermal splitting, ultrasonic vibration, and the like. The width of the material 40 between adjacent system units 30 is preferably greater than the processing tolerance of the dividing means.

The electrical connection architecture of a subgroup according to an embodiment of the present invention is as shown in FIG. 12, but the type of the system unit in the drawings is merely an example, and is not intended to limit the embodiments of the present invention. The system unit types disclosed in the embodiments can be adopted in this embodiment without conflict. In Fig. (a), the electrical connection 60b is placed over the electrode 301 and material 40 of the system unit 30 across the isolation region 60b'. In the figure (b), one end of the electrical connection 60b is electrically connected to the electrode 301 of the system unit 30, and the other end is directly mounted on the material 40. In the figure (c), the electrical connection 60b is electrically connected to the system unit 30 without the electrode 301, and is directly mounted on the material 40. In Fig. (d), the electrical connection 60b is electrically connected to the system unit 30 without the electrode 301, and is placed over the material 40 after crossing the isolation region 60b'.

As shown in FIG. 13, in an embodiment of the invention, the photovoltaic system 100 includes two or more subgroups that are assembled in a multi-dimensional manner. The number of system units and the connection methods in each subgroup may be the same or different. For example, the subgroups 100a and 100c are stacked on top of and below the subgroup 100b, wherein the subgroup 100a includes four system units 30; the subgroup 100b includes one system unit 30; and the subgroup 100c includes two System unit 30. The subgroups can be electrically connected using solder, silver paste, or other suitable conductive materials. However, it is necessary to form an electrical connection between subgroups, and a simple structural relationship may also be established therebetween. However, the type or the number of the system unit 30 in the drawings are merely exemplary, and are not intended to limit the embodiments of the present invention. The system unit types and connection modes disclosed in other embodiments in the present application are not in conflict. It can be adopted for this embodiment.

Figure 14(a) shows the width L2, L1 of a subgroup and the same side of a single system unit 30 therein. L1/L2 is defined as X, and 0.05≤X≤1, preferably, 0.1≤X≤0.2, 0.2≤X≤0.3, 0.3≤X≤0.4, 0.4≤X≤0.5, 0.5≤X≤0.6, 0.6 ≤ X ≤ 0.7, 0.8 ≤ X ≤ 0.9, and / or 0.9 ≤ X ≤ 1. Specifically, L1/L2 = 260/600 and 580/1000. Figure 14(b) is a cross-sectional view showing a subgroup of a sub-group according to an embodiment of the present invention, the outline of which presents a trapezoidal shape. The relationship between the dimensions of the trapezoid is as follows: L2>L1, L2>L3. The position of one or more system units 30 in the subgroup is as shown, but its position relative to the boundary of material 40 is arbitrarily movable, i.e., at least one boundary of system unit 30 may just contact or exceed the material. The boundary of 40. For example, system unit 30 can access, contact, or protrude from upper edge 40a and/or lower edge 40b of material 40.

As shown in Fig. 15, in an embodiment of the invention, the illumination system, subgroup, or system unit (collectively referred to as a light source in this embodiment) can be integrated with a wavelength converting material. In particular, the wavelength converting material can be comprised of a separate material 40a, a separate material 40b, or a combination of materials 40a and 40b. Specifically, the material 40a is a phosphor powder, a dye, a semiconductor material, or a ceramic powder; the material 40b is a fluorescent block, a sintered block, a ceramic block, and an organic colloid. Or an inorganic colloid. Material 40a can be integrated with material 40, material 40b, or both during or after the aforementioned light source process. For example, the phosphor powder may be first mixed with the material 40 and then overlaid or filled on the system unit 30, or the wavelength converting material may be formed on the system unit 30 by means of lamination, dispensing, screen printing, deposition, or the like. . In Fig. (a), the material 40a, the material 40b, or the materials 40a and 40b are disposed in a light-emitting direction of one of the light sources, preferably over the light source. In Figure (b), material 40a is intermixed in material 40. In the figure (c), the arrangement of the materials 40a and 40b is a combination of the above aspects (a) and (b). In Fig. (d), the material 40a, the material 40b, or the materials 40a and 40b are disposed in the light-emitting direction of one of the light sources, but are not in direct contact with them, and preferably are in contact with the material 40.

As shown in Fig. 16, the illumination system, subgroup, or system unit (collectively referred to as a light source in this embodiment) emits blue light on which a wavelength conversion material is disposed. For a related embodiment of the wavelength converting material, reference may be made to the description of Figure 15 above. In Figure (a), the wavelength converting material can emit green or yellow light. In (b), the wavelength converting material emits red light and yellow light. In Figure (c), the wavelength conversion material of one region emits yellow light, and the wavelength conversion material of the other region emits red light, and the two regions do not overlap each other. Preferably, the yellow light region is larger than the red light region. In (d), the wavelength conversion material of one region emits yellow light, and the wavelength conversion material of the other region emits red light, and the two regions overlap each other. Preferably, the yellow light region is closer to the light source than the red light region. Specifically, in each of the above aspects, each color light is generated by exciting the corresponding phosphor powder or the fluorescent block by blue light.

As shown in Figure 17(a), some or several of the system elements in the illumination system or sub-group emit blue light, and another part or systems of the system emit red light, and the material 40 is mixed with green or Yellow phosphor powder, preferably, the number of blue light system units is less than the number of red light system units, for example, the ratio of the blue light system unit to the red light system unit is at least N/1+N (N Belongs to any positive integer). Alternatively, the power ratio of the blue light system unit to the red light system unit is N1/N2 (N1 and N2 belong to any positive integer). Preferably, the power of the blue light system unit is greater than the power of the red light system unit, for example, N1/N2=3.0/1.0, 2.5/1.0, 2.0/1.0, 1.5/1.0, or 1.1/1.0. As shown in Fig. 17(b), the illumination unit, the system unit 30 in the subgroup emits blue light, and the material 40 is mixed with red and yellow phosphor powder, preferably red and yellow phosphor. The powder system is evenly disposed in a certain space in the material 40, but non-uniform, gradual, discrete, or staggered distributions may also be selectively employed.

As shown in Figure 18(a), one of the system elements in the illumination system or subgroup emits blue light, the other part of the system unit emits red light, and the materials 40 and 40b are intermixed with the same or different emission spectrum. Yellow fluorescent powder. As shown in Figure 18(b), the active or actuated system elements in the illumination system or subgroup emit blue light, and the materials 40 and 40b are mixed with a suitable proportion of red and yellow phosphor powder. As shown in Figure 18(c), the active or actuating system unit in the illumination system or subgroup emits blue light, the material 40 is mixed with yellow phosphor powder, and the material 40b is mixed with red phosphor powder. body.

As shown in Fig. 19(a), one of the system units in the illumination system or subgroup emits blue light, a portion of the system unit emits green light, and a portion of the system unit emits red light. As shown in Fig. 19(b), one of the system units in the illumination system or subgroup emits blue light, and the other part of the system unit emits red light, and the material 40b is disposed on the two part system unit, and Mixed with green fluorescent powder. As shown in Fig. 19(c), one of the system units in the illumination system or subgroup emits blue light, and the other part of the system unit emits red light, and the material 40b is disposed on the blue optical system unit and mixed There are green fluorescent powder. As shown in Fig. 19(d), one of the system units in the illumination system or subgroup emits blue light, the other part of the system unit emits red light, and the material 40b is disposed in part or part of the blue optical system unit. It is mixed with green fluorescent powder.

As shown in Figures 20(a) through 20(c), the active or actuating system elements in the illumination system or subgroup emit blue light. In the figure (a), the material 40b in one region is mixed with green phosphor powder, and the material 40b in the other region is mixed with red phosphor powder. Preferably, the green phosphor powder region is larger than red phosphor. Powder area. In the figure (b), the material 40b of one region is mixed with the green phosphor powder, and the material 40b of the other region is mixed with the red phosphor powder, and the two regions overlap each other, preferably, short-wavelength light emission. The longer wavelength illumination area of the area is close to the system unit. In the figure (c), the material 40b is mixed with red and yellow phosphor powder. As shown in Figure 20(d), the active or actuating system elements in the illumination system or subgroup emit radiation that is not perceptible by the human eye, such as ultraviolet light. The materials 40b including blue, green, and red phosphor powders are respectively disposed on the system unit. The size of the three parts can be adjusted according to the efficiency, decay characteristics and thickness of the corresponding phosphor powder.

In the above or subsequent embodiments, in application, blue light with a suitable proportion of yellow light can produce cool white light; blue light with a suitable proportion of yellow light and red light can produce warm white light. The power ratio of blue light to red light is about 2:1 to 5:1, for example, 2.5:1, 3:1, 3.5:1, 4:1, and 4.5:1. The power ratio of green light to yellow light is about 1:4. However, the size ratio and arrangement area of the materials 40 and 40b in the drawings are merely illustrative, and are not the only embodiment of the present invention, and the user can adjust and exchange according to the situation. In addition, the system unit having no phosphor powder disposed on its light exit path may alternatively be covered by material 40, material 40b, or both. The material 40 and/or material 40b may be replaced with a phosphor powder in the form of a fluorescent block, a sintered block, a ceramic block, a dye, or a combination thereof.

The optoelectronic system or subgroup may include, in addition to the system unit 30 that emits light, one or more integrated circuits (ICs) for controlling all or part of the system unit 30, or as all or part of the system unit. 30 circuit relay, as shown in Figure 21 (a). In addition to the integrated circuit, the optoelectronic system or subgroup can be connected to the system unit 30'. In one embodiment, system unit 30' is a power supply system, such as a chemical battery, solar cell, fuel cell, or the like. In one embodiment, system unit 30' is a transformer system, a frequency conversion system, a rectification system. Specifically, the system unit 30' is a switched-mode power supply (SWMP) and a high-frequency transformer.

22(a) to 22(f) are schematic diagrams showing several configuration types of an optoelectronic system or a subgroup, wherein the system unit 30 is not limited to one of the light emitting elements, one or two or more System unit 30 can be a unit that does not have a lighting function, as described in the foregoing or subsequent embodiments.

As shown in FIG. 23A, in a method of fabricating an optoelectronic system according to an embodiment of the present invention, a carrier 10 (also referred to as a temporary substrate in this embodiment) is first provided on the temporary substrate 10 Spin coating, evaporation or printing, etc. form a layer or structure 20 of the upper surface of the mask (also referred to as the first connecting layer in this embodiment), and can be selected by a picking system (Pick & Place system) A plurality of unpackaged system units 30 (also referred to as optoelectronic elements in this embodiment) are placed and connected over the first connection layer 20, and a plurality of walkway regions are formed in the spaced regions of the plurality of photovoltaic elements 30. 304, wherein the alignment accuracy when the photovoltaic element 30 is placed is mainly determined by the pick and place system, for example, the error does not exceed 15 μm. The photo-electric component 30 can be a light-emitting diode, and the structure can include a substrate 303, a semiconductor epitaxial layer 302 formed on the substrate, and at least one electrode 301. The semiconductor epitaxial layer 302 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. Additionally, the substrate 303 can be selectively removed during the manufacturing process to reduce system size. In a preferred embodiment, at least one electrode 301 of the photovoltaic element 30 is in contact with the first connection layer 20 described above. The plurality of photovoltaic elements 30 can emit light having the same or different wavelengths, and the light-emitting range can be from ultraviolet light to infrared light.

The material of the temporary substrate 10 may be selected from silicone, glass, quartz, ceramic, alloy or printed circuit board (PCB); the material of the first connecting layer 20 may be selected from tape, for example, heat removal tape (thermal Release tape), UV release tape, chemical release tape, heat-resistant tape or blue film; the material of the substrate 303 of the above-mentioned photovoltaic element 30 may be selected from sapphire (sapphire), tantalum carbide ( a highly thermally conductive substrate such as SiC), zinc oxide (ZnO), gallium nitride (GaN) or germanium, glass, quartz, or ceramic; a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer of the above-described photovoltaic element 30 The material comprises one or more substances selected from the group consisting of gallium (Ga), aluminum (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N), and cerium (Si).

Next, as shown in FIG. 23B, a material 40 (specifically, a viscous rubber material in this embodiment) is provided to fill the aisle region 304 of the plurality of photovoltaic elements 30, and covers the plurality of photovoltaic elements 30 and The surface of the first connection layer 20 covered by the photovoltaic element. The adhesive adhesive 40 can be formed by spin coating, printing or mold filling, and the adhesive adhesive 40 can also be an elastic material, and the material can be selected from silicone rubber and silicone resin. Resin, silicone, elastic PU, porous PU, acrylic rubber or die cutting glue, such as blue film or UV glue. In this embodiment, a polishing process may be performed to planarize the surface of the plurality of photovoltaic elements 30, and the surface of the photovoltaic element 30 is not allowed to have an excess or recessed adhesive. 40.

Subsequently, as shown in FIG. 23C, a carrier 50 (also referred to as a permanent substrate in this embodiment) is provided and bonded to a plurality of photovoltaic elements 30 coated with the adhesive glue 40. For a hot press. In a preferred embodiment, the permanent substrate 50 is in direct contact with the substrate 303 of the optoelectronic component 30. The material of the permanent substrate 50 may be silicone, glass, quartz, ceramic, alloy or printed circuit board (PCB).

Then, as shown in FIG. 23D, the temporary substrate 10, the first connecting layer 20 and the partial adhesive material 40 may be removed by laser stripping, heating and separating the film pattern, and the film pattern is dissolved. The electrode 301 of the photovoltaic element 30 and a portion of the semiconductor epitaxial layer 302.

Finally, as shown in FIG. 23E, an electrical connection 60 (specifically, a plurality of wires in this embodiment) is formed by bonding and bonding the yellow wires to connect the electrodes 301 of the plurality of photovoltaic elements to be connected in series. A plurality of photovoltaic elements 30. The material of the wire 60 may be gold, aluminum, alloy or multilayer metal to form a system-level photovoltaic structure.

24A to 24G are structural diagrams of a manufacturing process according to another embodiment of the present invention (an element similar or identical to the embodiment of Fig. 23 will be given the same reference numerals, the same applies hereinafter). As shown in FIG. 24A, a temporary substrate 10 is provided, and a first connection layer 20 of the upper and lower masks is formed on the temporary substrate 10 by spin coating, evaporation or printing, and can be selected by the placement system. (Pick & Place system) A plurality of unpackaged photovoltaic elements 30 are placed and connected on the first connection layer 20, and a plurality of aisle regions 304 are formed in the spaced regions of the plurality of photovoltaic elements 30, wherein the photovoltaic elements are placed The alignment accuracy is limited to a tolerance of no more than the selected placement system, for example, no more than 15 μm. The photo-electric component 30 can be a light-emitting diode, and the structure can include a substrate 303, a semiconductor epitaxial layer 302 formed on the substrate, and at least one electrode 301. The semiconductor epitaxial layer 302 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. In a preferred embodiment, at least one electrode 301 of the photovoltaic element 30 is in contact with the first connection layer 20 described above. The above-mentioned photovoltaic element 30 can emit light having the same or different wavelengths, and the light-emitting range can be from ultraviolet light to infrared light.

The material of the temporary substrate 10 may be selected from silicone, glass, quartz, ceramic, alloy or printed circuit board (PCB); the material of the first connecting layer 20 may be selected from tape, for example, heat removal tape (thermal Release tape), UV release tape, chemical release tape, heat-resistant tape, blue film or metal; the material of the substrate 303 of the above-mentioned photovoltaic element 30 may be selected from sapphire, carbonized a highly thermally conductive substrate such as bismuth (SiC), zinc oxide (ZnO), gallium nitride (GaN) or germanium, glass, quartz, GaAs, or ceramic; a first conductive semiconductor layer, an active layer, and a second of the above-described photovoltaic element 30 The material of the conductive semiconductor layer comprises one or more substances selected from the group consisting of gallium (Ga), aluminum (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N), and bismuth (Si). Form a group.

Further, as shown in Fig. 24A, in the system-level photovoltaic structure of the present invention, each of the above-described photovoltaic elements 30 may be first coated with a fluorescent material P. By averaging the phosphor material, a stable white light source can be provided and the white light variability of each of the photovoltaic elements 30 in the subsequent process can be reduced. The fluorescent material P may be formed by spin coating, deposition, dispensing, scraping or casting. In another embodiment, the plurality of photovoltaic elements 30 may each be coated with a different fluorescent material. In another embodiment, the plurality of photovoltaic elements 30 can also be selectively coated with different fluorescent materials, and not all of the photovoltaic elements 30 are coated to mix different colored lights. For example, in an embodiment, the plurality of photovoltaic elements 30 may be blue light emitting diodes, and three of the plurality of photovoltaic elements 30 are regarded as a group, wherein the first photovoltaic element is coated with fluorescent light. The material P may be a red phosphor powder, the second photovoltaic element coated phosphor material P may be a green phosphor powder, and the third photovoltaic element may not be coated with a fluorescent material to be mixed to emit white light.

Next, as shown in FIG. 24B, a viscous adhesive 40 is provided to fill the aisle region 304 of the plurality of photovoltaic elements 30, and covers the surface of the plurality of photovoltaic elements 30 and the first connection layer 20 not covered by the photovoltaic elements. . The adhesive adhesive 40 can be formed by spin coating, printing or mold filling, and the adhesive 40 can be an elastic material, and the material can be selected from silicone rubber and silicone resin. ), silicone, elastic PU, porous PU, acrylic rubber or die cutting glue, such as blue film or UV glue. In this embodiment, a polishing process can also be performed to planarize the surface of the plurality of photovoltaic elements 30, and the surface of the photovoltaic element 30 is not allowed to have excessive or concave adhesive. Material 40.

Subsequently, as shown in Fig. 24C, a permanent substrate 50 is provided and bonded to a plurality of photovoltaic elements 30 coated with a viscous adhesive 40, which may be a hot stamping process. In a preferred embodiment, the permanent substrate 50 is in direct contact with the substrate 303 of the optoelectronic component 30. The material of the permanent substrate 50 may be a height substrate such as glass or quartz.

Then, as shown in FIG. 24D, the temporary substrate 10, the first connecting layer 20 and the partial adhesive material 40 may be removed by laser stripping, heating and separating the film pattern, and the film pattern is dissolved. The electrode 301 of the photovoltaic element 30 and a portion of the semiconductor epitaxial layer 302.

Then, as shown in Fig. 24E, a plurality of Fan-out electrodes 305 are connected to the electrodes 301 of the plurality of photovoltaic elements by electroplating or evaporation. Wherein the area of the dilation electrode 305 is larger than the electrode 301 of the optoelectronic component, the alignment tolerance of the subsequent package can be increased. In addition, since the area of the expansion electrode 305 is increased, the heat source can be more effectively guided to a substrate such as a metal or a PCB of a subsequent package. The material of the above-mentioned expansion electrode may be gold, aluminum, alloy or a multilayer metal structure.

Finally, as shown in Figures 24F-24G, the plurality of photovoltaic elements are diced to form respective dies, and then bonded to the submount 60 by at least one solder 601 to A system level photovoltaic structure is formed. The secondary carrier 60 described above may be a lead frame or a large mounting substrate to facilitate circuit planning of the system-level photovoltaic structure and improve its heat dissipation effect.

It should be noted that the process steps in the above two embodiments may also be referred to or combined with each other. For example, the photovoltaic element in the first embodiment may also selectively coat the fluorescent material, or may continue after the 23D image. The subsequent steps of making the electrode, cutting the wafer, etc. in Fig. 24E; similarly, the second embodiment can also follow the step of Fig. 23E after the 24D drawing, and electrically connecting the plurality of photovoltaic elements with the wires.

In addition, in another embodiment of the present invention, after the 23B or 24B drawing, as shown in FIG. 25A, a permanent substrate 50 may be provided, and the permanent substrate 50 is first bonded to a second connecting layer 70. Afterwards, it is bonded to a plurality of photovoltaic elements 30 coated with a viscous adhesive 40, which may be a hot press. The material of the second connecting layer 70 may be SiOx, SiNx or silicone. In another embodiment of the present invention, after the 23B or 24B drawing, as shown in FIG. 25B, the second connecting layer 70 may also be a second connecting layer 70' including a plurality of channels 701, which may increase System-level optoelectronic components dissipate heat and increase the wattage that can be tolerated. The material of the above channel 701 may be a metal such as copper, aluminum, nickel or an alloy. Further, the channel 701 may be made of the same material as the second connection layer 70', such as sapphire, metal, tantalum nitride, or aluminum oxide.

In another embodiment of the present invention, after the 23B or 24B drawing, as shown in FIG. 26, a permanent substrate 50 may be provided, and the permanent substrate 50 is first connected by an interposer (not shown). After the first reflective layer 80 is bonded to a second connecting layer 70, it is bonded to a plurality of photovoltaic elements 30 coated with the adhesive adhesive 40, which may be a hot pressing process. The material of the interposer is SiOx, SiNx, silicone or the like. The material of the first reflective layer 80 may be a metal such as silver, aluminum or platinum, or a distributed Bragg reflector (DBR) composed of a dielectric or a semiconductor. In this embodiment, by the design of the first reflective layer 80, the light extraction efficiency of the system-level photovoltaic structure can be increased.

In order to further prevent the plurality of photovoltaic elements 30 from being placed too close to cause lateral light loss and/or light extraction efficiency degradation, in another embodiment of the present invention, subsequent to the 23B or 24B diagram, As shown in Fig. 27, a substrate 50' having a micro-pyramid array can be selected. The micro-corner array substrate 50' can be fabricated by using a semiconductor etching technique. The plurality of micro-horns 501 on the substrate can be in the form of a polygonal pyramid such as a cone, a triangular pyramid and a quadrangular pyramid. The bottom corner of the micro-horn 501 can be Between 20 and 70 degrees. In another embodiment, the surface of the micro pyramid array substrate 50' may also be coated with a second reflective layer having high reflectivity, such as a metal such as silver, aluminum, or platinum; and the material of the micro pyramid array substrate 50'. It can be silicone, glass, quartz, ceramic, alloy or printed circuit board (PCB). It can also be made of high thermal conductivity material to increase component reliability. The material can be copper, aluminum, ceramic or tantalum. The micro-horn array substrate 50' can be bonded to the plurality of photovoltaic elements 30 of the adhesive adhesive 40 by alignment, which can be a hot stamping process. In this embodiment, by the design of the microhorn array substrate 50', the lateral light of the system-level photovoltaic structure can be reflected into forward light to increase the light extraction efficiency.

The above figures and descriptions are only corresponding to specific embodiments, however, the elements, embodiments, design criteria, and technical principles described or disclosed in the various embodiments are inconsistent, contradictory, or difficult to implement together. In addition, we may use any reference, exchange, collocation, coordination, or merger as required.

Although the invention has been described above, it is not intended to limit the scope of the invention, the order of implementation, or the materials and process methods used. Various modifications and variations of the present invention are possible without departing from the spirit and scope of the invention.

10‧‧‧ Vehicles, temporary substrates
60‧‧‧Electrical connection
10a‧‧‧External body
60a‧‧‧Wire
10b‧‧‧External body
60b‧‧‧Internal connection
20‧‧‧layer, structure, first connection layer
60b'‧‧‧Isolated Area
30‧‧‧System unit, optoelectronic components
60c‧‧‧ circuit carrier
301‧‧‧electrode
601‧‧‧ solder
302‧‧‧Semiconductor epitaxial layer
70‧‧‧Second connection layer
303‧‧‧Substrate
70'‧‧‧Second connection layer
304‧‧‧Aisle area
701‧‧‧ channel
305‧‧‧Expanded electrode
80‧‧‧First reflective layer
40‧‧‧Materials, adhesive glue
100‧‧‧Photoelectric system
50‧‧‧ times vehicle, permanent substrate
100a‧‧‧Subgroup
50'‧‧‧Substrate
100b‧‧‧Subgroup
50a‧‧‧ joint layer
100c‧‧‧Subgroup
501‧‧‧Microhorn
200‧‧‧Light emitting diode package structure

Figure 1 shows a light emitting diode package structure;

2A to 2D are diagrams showing a method of manufacturing a photovoltaic system according to an embodiment of the present invention;

Figure 3 is a schematic view showing a photovoltaic system in accordance with an embodiment of the present invention;

4 is a schematic view showing a system unit and a carrier according to an embodiment of the present invention;

Figure 5 is a schematic view showing a system unit and a sub-carrier according to an embodiment of the present invention;

Figure 6 is a schematic view showing the electrical connection of the system unit in the photovoltaic system according to an embodiment of the present invention;

Figure 7 is a schematic view showing the electrical connection of the system unit in the photovoltaic system according to another embodiment of the present invention;

Figure 8 is a schematic view showing the electrical connection of the system unit in the photovoltaic system according to still another embodiment of the present invention;

9A to 9D are views showing a method of manufacturing a photovoltaic system according to another embodiment of the present invention;

Figure 10 is a schematic view showing the electrical connection of the system unit in the photovoltaic system according to an embodiment of the present invention;

Figure 11 is a schematic view showing a subgroup in a photovoltaic system according to an embodiment of the present invention;

Figure 12 is a diagram showing an electrical connection architecture of a subgroup according to an embodiment of the present invention;

Figure 13 is a diagram showing an electrical connection architecture of a subgroup according to another embodiment of the present invention;

Figure 14 is a plan view showing a single system unit in accordance with an embodiment of the present invention;

Figure 15 is a diagram showing the arrangement of wavelength converting materials in a photovoltaic system according to an embodiment of the present invention;

Figure 16 is a diagram showing the arrangement of wavelength converting materials in a photovoltaic system according to another embodiment of the present invention;

Figure 17 is a diagram showing the arrangement of wavelength converting materials in a photovoltaic system according to still another embodiment of the present invention;

Figure 18 is a diagram showing the arrangement of wavelength converting materials in a photovoltaic system according to an embodiment of the present invention;

Figure 19 is a diagram showing the arrangement of wavelength converting materials in a photovoltaic system according to another embodiment of the present invention;

Figure 20 is a diagram showing the arrangement of wavelength converting materials in a photovoltaic system according to still another embodiment of the present invention;

Figure 21 is a schematic view showing the arrangement of system units in a photovoltaic system according to an embodiment of the present invention;

Figure 22 is a schematic view showing the configuration of a photovoltaic system or a subgroup according to an embodiment of the present invention;

23A to 23E are schematic views showing the structure of a manufacturing process of the present invention;

24A to 24G are schematic views showing the structure of a manufacturing process of the present invention;

25A and 25B are schematic diagrams showing the structure of a manufacturing process according to an embodiment of the present invention;

26 is a schematic structural view of a manufacturing process according to an embodiment of the present invention; and

Figure 27 is a schematic view showing the structure of a manufacturing process according to an embodiment of the present invention.

no

no

30‧‧‧System Unit

301‧‧‧electrode

305‧‧‧Expanded electrode

40‧‧‧Materials

60‧‧‧Electrical connection

601‧‧‧ solder

P‧‧‧Fluorescent materials

Claims (10)

An optoelectronic system comprising: a first optoelectronic component having a first electrode; a second optoelectronic component; a glue comprising an outermost surface surrounding the first optoelectronic component and the second optoelectronic component; The first electrical connection device connects the first electrode and extends toward the outermost surface, but does not protrude from the outermost surface. The photovoltaic system of claim 1, further comprising an isolation region between the first electrical connection device and the first photovoltaic element. The photovoltaic system of claim 1, further comprising an isolation region covering the first photovoltaic element and the second photovoltaic element. The photovoltaic system of claim 1, wherein the second photovoltaic element further comprises a second electrode. The photovoltaic system of claim 4, further comprising a second electrical connection device connecting the second electrode and extending toward the outermost surface, but not protruding the outermost surface. The photovoltaic system of claim 5, further comprising an isolation region between the second electrical connection device and the second photovoltaic element. The photovoltaic system of claim 1, wherein the first photovoltaic element further comprises a second electrode. The optoelectronic system of claim 7, further comprising a second electrical connection device connecting the second electrode and extending away from the second optoelectronic component, but not exceeding the outermost surface. The photovoltaic system of claim 8, further comprising an isolation region between the second electrical connection device and the first photovoltaic element. The photovoltaic system of claim 1, further comprising a walkway region between the first photovoltaic element and the second photovoltaic element.