CN106684112A - Organic light emitting display device and manufacture method thereof - Google Patents
Organic light emitting display device and manufacture method thereof Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 abstract 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to an organic light emitting display device and a manufacture method thereof. The method includes providing an LTPS substrate; forming an anode layer on the substrate; forming an organic light emitting layer on the anode layer and forming a cathode layer on the organic light emitting layer, wherein the organic light emitting layer is used for emitting blue light; forming a quantum dot layer including red sub pixels, green sub pixels and blank sub pixels on the cathode layer; and forming a packaging layer on the quantum dot layer. Through forming the quantum dot layer on the cathode layer directly, through exciting the red sub pixels and the green sub pixels of the quantum dot layer with the blue light emitted by the organic light emitting layer and through penetration of the blue light by the blank sub pixels, light of different colors is emitted. Color saturation and color gamut are improved effectively. Besides, cost is reduced effectively and production efficiency is improved.
Description
Technical field
The present invention relates to organic light emission technical field, more particularly to organic light-emitting display device and its manufacture method.
Background technology
Organic light emitting diode display (Organic Light Emitting Diode, OLED) is a kind of great development
The flat panel display of prospect, with very excellent display performance, such as actively luminous, luminosity is high, excitation is high, colour gamut
Extensively, fast response time, low energy consumption and can flexibility the advantages of.
To realize that OLED shows true color, the making of current OLED adopts fine mask plate (Fine Metal
Mask, FMM) technology, but the cost of manufacture of FMM is very high, and short life, in processing procedure or in carrying, cleaning slightly
It is improper to cause to damage.And the aligning accuracy requirement of FMM and back-panel glass is very high, so just can guarantee that rgb pixel will not
Colour mixture.But FMM is different with the sag of chain of glass substrate, cause subregion FMM and glass substrate to fit well, lead
Colour mixture is caused, product yield is low.
Additionally, also by white organic LED (WOLED) and the side of chromatic filter layer (CF, Color Filter)
Formula is realizing.Due to using CF technologies, it is not necessary to the accurate para-positions of FMM, evaporation process is greatly simplified, thus life can be reduced
Produce cost.Realize full-color mainly using preparation by white organic LED (WOLED) and chromatic filter layer (CF)
There are the tft array substrate of WOLED and the mode of CF baseplate-laminatings.When being fitted, exist between WOLED and CF layers certain
Gap, and WOLED is self luminous light source, the light of luminescence unit it is lateral reach CF layers can because of gap the reason for and light leak, enter
And can cause to show the phenomenons such as colour mixture, affect the quality for showing.Additionally, CF layers absorb most luminous energy, only about 30%
Light-transmissive, cause luminous less efficient of OLED.
The content of the invention
Based on this, it is necessary to provide a kind of organic light-emitting display device and its manufacture method.
A kind of organic light-emitting display device, including：
LTPS substrates；
Anode layer, is formed on the substrate；
Organic luminous layer, is formed on the anode layer, and the organic luminous layer is blue light organic emissive layer；
Cathode layer, is formed on the organic luminous layer；
Quantum dot layer, is formed on the cathode layer, the quantum dot layer include red sub-pixel, amount of green color sub-pixel with
And clear subpixel；
Encapsulated layer, is formed on the quantum dot layer.
In one embodiment, the red sub-pixel is formed by red quantum dot material.
In one embodiment, the green sub-pixels are formed by green quanta point material.
In one embodiment, also including the protective layer being formed between the cathode layer and the quantum dot layer.
In one embodiment, the encapsulated layer includes the first encapsulated layer, the second encapsulated layer and the 3rd encapsulated layer, described the
One encapsulated layer, second encapsulated layer and the 3rd encapsulated layer are sequentially formed on the quantum dot layer.
A kind of manufacture method of organic light-emitting display device, including：
One LTPS substrates are provided；
Anode layer is formed on the substrate；
Organic luminous layer is formed on the anode layer, the organic luminous layer is used to launch blue light；
Cathode layer is formed on the organic luminous layer；
The quantum dot for including red sub-pixel, amount of green color sub-pixel and clear subpixel is formed on the cathode layer
Layer；
Encapsulated layer is formed on the quantum layer.
In one embodiment, being formed using inkjet printing includes red sub-pixel, amount of green color sub-pixel and blank son
The quantum dot layer of pixel.
In one embodiment, it is described on the cathode layer formed include red sub-pixel, amount of green color sub-pixel and
The step of quantum dot layer of clear subpixel, includes：
Protective layer is formed on the cathode layer, the quantum dot layer is formed on the protective layer.
In one embodiment, include before the step of anode layer of formation on the substrate：
Low-temperature polycrystalline silicon layer is formed on the substrate；
The step of anode layer of formation on the substrate, includes：
The anode layer is formed on the low-temperature polycrystalline silicon layer.
In one embodiment, it is described to include the step of formation encapsulated layer on the quantum layer：
The first encapsulated layer, the second encapsulated layer and the 3rd encapsulated layer are sequentially formed on the quantum dot layer.
Above-mentioned organic light-emitting display device and its manufacture method, by directly forming on cathode layer quantum dot layer, and lead to
Blue light that organic luminous layer sends is crossed to the red sub-pixel of quantum dot layer and exciting for amount of green color sub-pixel, and by the blank
Sub-pixel is penetrated to blue light, so as to send the light of different colours, effectively lifts color saturation and colour gamut, and can effectively be dropped
Low cost, improve production efficiency.
Above-mentioned organic light-emitting display device and its manufacture method, because each layer is sequentially formed on the same substrate, each layer it
Between can closely connect, can be prevented effectively between quantum dot layer and organic luminous layer (quantum dot layer and cathode layer) exist between
Gap, is prevented effectively from the situation for showing colour mixture so that display effect is more preferably.Further, since each layer is sequentially formed on the same substrate,
So that originally loaded down with trivial details production process is more simple, and avoid causes organic light emitting display to fill because the light transmittance of CF is poor
Put luminous less efficient situation so that organic light-emitting display device luminescence display is better.
Description of the drawings
Fig. 1 is the part section structural representation of the organic light-emitting display device of one embodiment；
Fig. 2 is the schematic flow sheet of the manufacture method of the organic light-emitting display device of one embodiment.
Specific embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In accompanying drawing
Give the better embodiment of the present invention.But, the present invention can be realized in many different forms, however it is not limited to herein
Described embodiment.On the contrary, the purpose for providing these embodiments is to make to understand more the disclosure
Plus it is thorough comprehensive.
Unless otherwise defined, all of technology used herein and scientific terminology and the technical field for belonging to the present invention
The implication that technical staff is generally understood that is identical.The term for being used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that of the invention in limiting.Term as used herein " and/or " include one or more
The arbitrary and all of combination of related Listed Items.
For example, a kind of organic light-emitting display device, including：Substrate；Anode layer, is formed on the substrate；Organic light emission
Layer, is formed on the anode layer, and the organic luminous layer is blue light organic emissive layer；Cathode layer, is formed at described organic
On photosphere；Quantum dot layer, is formed on the cathode layer, the quantum dot layer include red sub-pixel, amount of green color sub-pixel with
And clear subpixel；Encapsulated layer, is formed on the quantum dot layer.
As shown in figure 1, it is a kind of organic light-emitting display device 10 of an embodiment, including：Substrate 100, anode layer
200th, organic luminous layer 300, cathode layer 400, quantum dot layer 500 and encapsulated layer 600；Anode layer 200 is formed at the substrate 100
On；Organic luminous layer 300 is formed on the anode layer 200, and the organic luminous layer 300 is blue light organic emissive layer 300；It is cloudy
Pole layer 400 is formed on the organic luminous layer 300；Quantum dot layer 500 is formed on the cathode layer 400, the quantum dot
Layer 500 includes red sub-pixel, amount of green color sub-pixel and clear subpixel；Encapsulated layer 600 is formed at the quantum dot layer 500
On.
For example, the substrate 100 is the base with LTPS (Low Temperature Poly-silicon, low temperature polycrystalline silicon)
Plate 100, for example, the substrate 100 includes glass substrate 100, and for example, the substrate 100 includes flexible base board 100.For example, the sun
Pole layer 200 is made using high reflection material, and for example, the material of anode layer 200 is tin indium oxide (ITO), for example, the anode layer
Material be silver, for example, the anode layer includes the indium tin oxide layer, silver layer and the/indium tin oxide layer that are sequentially connected.For example,
The thickness of anode layer 200 is 100~300nm, and and for example, the thickness of anode layer 200 is 200nm.For example, the negative electrode adopts transparent material
Material is made so that the light that organic luminous layer 300 sends can penetrate the negative electrode, and for example, the material of the negative electrode is magnesium silver alloy.
Specifically, the cathode layer 400 is formed on the organic luminous layer 300.For example, the cathode layer 400 is by electrically conducting transparent material
Material is made.And for example, the transmitance of the cathode layer 400 is 75~92%, and refractive index is 1.5~15.And for example, the cathode layer
400 thickness is 100~200nm.
For example, the material of the organic luminous layer 300 is blue organic luminous material, i.e. the material of the organic luminous layer 300
Blue light is sent in the case where voltage drives.For example, the thickness of organic luminous layer 300 is 400nm.It is appreciated that anode layer 200 with thereon
Organic luminous layer 300 and cathode layer 400 may make up a luminescence unit, in the present embodiment, luminescence unit is blue-light-emitting
Unit, i.e. luminescence unit is Nan dian Yao (BLOED).
For example, the thickness of the quantum dot layer 500 is 50~100nm, and for example, the thickness of the quantum dot layer 500 is
50nm, and for example, the thickness of the quantum dot layer 500 is 70nm, it is worth mentioning at this point that, the thickness of quantum dot layer 500 is unsuitable excessive,
Excessive then luminous intensity is too strong, causes organic light-emitting display device colour cast, and the thickness of quantum dot layer 500 is unsuitable too small, too small
Then so that the luminous intensity after the exciting of red sub-pixel and green sub-pixels is weaker, organic light-emitting display device is also led to
Illumination effect is not good, therefore, in the present embodiment, the thickness of the quantum dot layer 500 is 50~100nm, is on the one hand caused organic
Luminous display unit does not produce colour cast problem, on the other hand so that the luminous intensity of red sub-pixel and green sub-pixels is stronger,
And then cause the illumination effect of organic light-emitting display device more preferably,
For example, the thickness of the quantum dot layer 500 is 50nm.For example, the red sub-pixel is by red quantum dot material shape
Into for example, the red quantum dot material includes cadmium selenide (CdSe), for example, the red quantum dot material includes cadmium sulfide
(CdS), for example, the red quantum dot material includes perovskite series material, and for example, the perovskite series material can use general structure
AMX3Represent, wherein, A is CH3NH3+、NH2 -CH=NH2 +And Cs+In any one, M is Pb2+、Sn2+、Ge2+、Co2+、Fe2+、
Mn2+、Cu2+、Ni2+And Bi3+In any one, X is Cl-、Br-And I-In any one, for example, the red quantum dot material
Including carbon quantum dot, and for example, the red quantum dot material includes graphene quantum dot.For example, the quantum dot layer 500 includes redness
Pixel region, the red pixel area is formed by red quantum dot material.
For example, the green sub-pixels are formed by green quanta point material, and for example, the quantum dot layer 500 includes green picture
Plain region, the green pixel area is formed by green quanta point material.For example, the green quanta point material includes cadmium selenide
(CdSe), for example, the green quanta point material includes zinc sulfide (ZnS), and for example, the green quanta point material includes zinc selenide
(ZnSe), for example, the green quanta point material includes perovskite series material, and for example, the perovskite series material can be logical with structure
Formula AMX3Represent, wherein, A is CH3NH3+、NH2 -CH=NH2 +And Cs+In any one, M is Pb2+、Sn2+、Ge2+、Co2+、Fe2 +、Mn2+、Cu2+、Ni2+And Bi3+In any one, X is Cl-、Br-And I-In any one, for example, the green quantum dot material
Material includes carbon quantum dot, and and for example, the green quanta point material includes graphene quantum dot.
For example, interval forms clear subpixel between the red sub-pixel and green sub-pixels, for example, the quantum dot layer
500 include blank pixel region, and the blank pixel region is red sub-pixel and green sub-pixels interval region, the i.e. blank picture
Plain region does not include pixel, and for example, the quantum dot layer includes blank sub-pixel, and the blank sub-pixel is clear subpixel.
In a further embodiment, the clear subpixel is formed by colourless material, and for example, the colourless material includes that polyamides is sub-
Amine (PI), for example, the colourless material includes polyethylene terephthalate (PET), and for example, the colourless material includes poly- naphthalene two
Formic acid glycol ester (PEN), for example, the colourless material includes epoxy resin.For example, the quantum dot layer 500 includes blank sub- picture
Element, the clear subpixel is connected respectively with red sub-pixel and green sub-pixels, and the clear subpixel is formed by colourless material, should
Clear subpixel can direct transmitted ray, the i.e. blue ray of transmission organic luminous layer 300.
For example, the area of red pixel area is 1/2nd of blank pixel region, for example, the face of green pixel area
Product for blank pixel region 1/2nd, and for example, the red pixel area it is generally circular in shape, for example, the red pixel area
Domain is shaped as rectangle, and for example, the green pixel area it is generally circular in shape, for example, the green pixel area is shaped as square
Shape, for example, arranges a blank pixel region between two red pixel areas, and for example, set between two green pixel areas
Put a blank pixel region.
For example, thickness of the quantum dot layer 500 at blank pixel region more than its red pixel area or its in green
Thickness at pixel region；And for example, quantum dot layer 500 has projective structure at blank pixel region, and the projective structure is
Truncated conical shape or Part-spherical, for being recessed to blank pixel region and the pixel region that at least partly fills in the blanks.For example, it is red
Color pixel region, green pixel area and blank pixel region alternate intervals are arranged.And for example, red pixel area, green picture
Plain region and blank pixel region are uniformly arranged, for example, red pixel area, green pixel area and blank pixel region
Area equation, and/or, red pixel area, green pixel area and blank pixel region be congruence shape, for example,
Red pixel area, green pixel area and blank pixel region are the fan-shaped or rectangle of congruence；And for example, red pixel area
Domain, green pixel area and blank pixel region form a spiral type, and red pixel area, green pixel area and
It is spiral-shaped that blank pixel region is respectively one of son.
Quantum dot is a kind of semi-conductor nano particles, and particle diameter is typically at several nanometers between tens nanometer.Quantum dot due to
The presence of quantum confined effect, originally continuously can band become discrete level structure, by can launch after extraneous excitation
Visible ray, for example, red quantum dot material launches red light after exciting, and for example, green quanta point material excites rear transmitting green
Light.Because quanta point material is single level structure, the frequency spectrum of the light that the quantum dot of each fixed size sends after being stimulated is only
One, i.e., color is unique, is pure color.So, it conveniently, accurately can be adjusted by quantum spot size size
The optical wavelength of generation, and then produce the light of different colours.Quanta point material is sent out due to the emission peak with less halfwidth
Light color can be adjusted by the size of quanta point material or structure, therefore quantum dot layer 500 can effectively lift organic
The color saturation and colour gamut of electro-optical display device 10.Additionally, the full gamut that quanta point material possesses brilliance shows feature, to NTSC
(National Television Standards Committee, NTSC) standard color gamut coverage rate is high
Up to 120-130%, color can be truly reduced, effectively lift colour vividness and sense of reality.Quantum dot is mineral crystal, stable
Property it is very high, will not produce burn-in phenomenon, color decay is slower so that the display device service life with quantum dot is longer,
Also therefore, the brightness of the display device with quantum dot is higher.Quantum dot is made up of solution processing technique, required for product line
Cost is very low so that the raw material service efficiency of quantum dot is high.
For example, the material of the encapsulated layer 600 is silicon nitride (SiNx), silicon dioxide (SiOx), carborundum (SiC), carbon
One kind in silicon oxide (SiOC), silicon oxynitride (SiON), the thickness of the encapsulated layer 600 is between 0.1 μm~2 μm；And for example,
The material of the encapsulated layer 600 is the one kind in silicon dioxide (SiO2), aluminium oxide (Al2O3), zirconium oxide (ZrOx), the envelope
The thickness of dress layer 600 is between 5nm~100nm.
In the present embodiment, the blue light of the transmitting of organic luminous layer 300 is capable of the red sub-pixel of excitation quantum point layer 500
With amount of green color sub-pixel, the blue ray of the transmitting of organic luminous layer 300 is through the sub-pixel that formed by quanta point material, booster dose
Son point material sends the light of corresponding sub-pixel colors, correspondence red pixel area or green pixel area send respectively HONGGUANG or
Person's green glow, blue ray sends blue light through person's blank pixel region, and each sub-pixel or each pixel region cooperate so that
Organic light-emitting display device 10 shows shades of colour.
The organic light-emitting display device 10 of the present embodiment, by the directly formation quantum dot layer 500 on cathode layer 400, and
The blue light sent by organic luminous layer 300 is excited to the red sub-pixel and amount of green color sub-pixel of quantum dot layer 500, and is passed through
The clear subpixel is penetrated to blue light, so as to send the light of different colours, effectively lifts color saturation and colour gamut, and can
Effective reduces cost, improve production efficiency.
In order to avoid causing to damage and tentatively cathode layer 400 and organic material are protected to cathode layer 400, one
In individual embodiment, organic light-emitting display device 10 also includes being formed between the cathode layer 400 and the quantum dot layer 500
Protective layer 700, for example, is additionally provided with protective layer 700, i.e. first in cathode layer 400 between cathode layer 400 and quantum dot layer 500
Upper formation layer protective layer 700, then quantum dot layer 500 is formed on protective layer 700.For example, the material bag of the protective layer 700
Include silicon nitride (SiNx), for example, using the method for PECVD (plasma enhanced chemical vapor deposition) on cathode layer 400 shape
Into protective layer 700.For example, the thickness of protective layer 700 be 0.1~1 μm, and then be prevented effectively to cathode layer 400 cause damage simultaneously
And tentatively cathode layer 400 and luminous organic material are protected.
In order to realize the encapsulation to organic light-emitting display device 10, each layer of organic light-emitting display device 10 is protected
Shield, in one embodiment, the encapsulated layer 600 includes the first encapsulated layer 610, the second encapsulated layer 620 and the 3rd encapsulated layer
630, first encapsulated layer 610, second encapsulated layer 620 and the 3rd encapsulated layer 630 are sequentially formed in the quantum
On point layer 500.For example, the first encapsulated layer 610 and the 3rd encapsulated layer 630 are inorganic layer, and the second encapsulated layer 620 is Organic substance
Layer, for example, the second encapsulated layer 620 is organic stress control layer, and second encapsulated layer 620 can improve the stress of encapsulated layer 600
Performance, because the material of the first encapsulated layer 610 and the 3rd encapsulated layer 630 is inorganic matters, the two toughness is poor, and comparison is crisp, easily
Cracking, and the good toughness of the second encapsulated layer 620, the second encapsulated layer 620 can effectively discharge the first encapsulated layer 610 and the 3rd encapsulated layer
Stress in 630, so as to improve the stress performance of encapsulated layer 600.
For example, the material of the first encapsulated layer 610 includes silicon nitride (SiNx), and for example, the material of the first encapsulated layer 610 includes
Silicon dioxide (SiO2), for example, the material of the first encapsulated layer 610 includes aluminium oxide (AlOx), for example, the 3rd encapsulated layer 630
Material includes silicon nitride (SiNx), and for example, the material of the 3rd encapsulated layer 630 includes silicon dioxide (SiOx), for example, the second encapsulation
The material of layer 620 includes acrylic.By the first encapsulated layer 610, the second encapsulated layer 620 and the 3rd encapsulated layer 630 to quantum dot
The encapsulation on the surface of layer 500 so that organic light-emitting display device 10 is effectively protected.
For example, a kind of manufacture method of organic light-emitting display device, including：One substrate is provided；Formed on the substrate
Anode layer；Organic luminous layer is formed on the anode layer, the organic luminous layer is used to launch blue light；In the organic light emission
Cathode layer is formed on layer；Being formed on the cathode layer includes red sub-pixel, the quantum dot layer of amount of green color sub-pixel, and at this
Clear subpixel is formed on quantum dot layer；Encapsulated layer is formed on the quantum layer.
As shown in Fig. 2 it is a kind of manufacture method of organic light-emitting display device of an embodiment, including：
Step 102, there is provided a LTPS substrates.
For example, substrate is the substrate with LTPS (Low Temperature Poly-silicon, low temperature polycrystalline silicon), example
Such as, the substrate includes glass substrate, and for example, the substrate includes flexible base board, and for example, the substrate is the glass base with LTPS
Plate, and for example, the substrate is the flexible base board with LTPS, specifically, substrate using glass or flexible base board, such as PET, PEN,
PI, Si series or Acryl based materials etc..
In one embodiment, low-temperature polycrystalline silicon layer is formed on the substrate, and in the present embodiment, substrate is glass base
Plate, on the glass substrate low-temperature polycrystalline silicon layer is formed, so as to form the substrate with low temperature polycrystalline silicon.
Step 104, forms on the substrate anode layer.
Specifically, this step, the Deposition anode layer on substrate for example, using sputtering mode anode layer is formed on substrate.
For example, the thickness of the anode layer of deposition is 200nm, and anode layer is made using high reflection material, for example, the material of anode layer deposition
For tin indium oxide (ITO), for example, the material of anode layer deposition is silver, for example, the therefore formation of deposits tin indium oxide on substrate
Layer, silver layer and indium tin oxide layer.
In one embodiment, the anode layer is formed on the low-temperature polycrystalline silicon layer.For example, form low on substrate
Warm polysilicon layer, then the anode layer is formed on low-temperature polycrystalline silicon layer.It should be understood that including anode layer, organic light emission
The luminescence unit of layer and cathode layer is lighted by low-temperature polycrystalline silicon layer.
Step 106, forms organic luminous layer on the anode layer, and the organic luminous layer is used to launch blue light.
For example, organic luminous layer is formed on the anode layer by the way of vacuum evaporation, the organic luminous layer is used to launch
Blue light, for example, the material of the organic luminous layer is blue emitting material, i.e. the material of the organic luminous layer drives in voltage
Under send blue light.For example, the thickness of organic luminous layer is 400nm.
Step 108, on the organic luminous layer cathode layer is formed.
For example, transparent cathode is formed on the organic luminous layer, for example, the cathode layer is by transparent conductive material system
Into for example, the material of the cathode layer is magnesium silver alloy, for example, made on organic luminous layer by the way of vacuum evaporation
Cathode layer.For example, the transmitance of the cathode layer is 75~92%, and refractive index is 1.5~15.And for example, the thickness of the cathode layer
Spend for 100~200nm.
Step 110, being formed on the cathode layer includes red sub-pixel, amount of green color sub-pixel and clear subpixel
Quantum dot layer.
For example, the thickness of the quantum dot layer is 50~100nm.For example, being formed using inkjet printing includes red sub- picture
The quantum dot layer of element, amount of green color sub-pixel and clear subpixel, for example, using inkjet printing bag is formed on the cathode layer
Include the quantum dot layer of red sub-pixel, amount of green color sub-pixel and clear subpixel.For example, the red sub-pixel is by amount of red
Son point material is formed, and for example, the quantum dot layer includes red pixel area, and the red pixel area is by red quantum dot material shape
Into for example, the green sub-pixels are formed by green quanta point material, for example, the quantum dot layer includes green pixel area, should
Green pixel area is formed by green quanta point material, and for example, the clear subpixel is blank pixel region, i.e., using ink-jet
It is printed upon on cathode layer forming red sub-pixel in red pixel area, in green pixel area green sub-pixels is formed, this is red
Interval forms blank pixel region between color pixel region and green pixel area, i.e., do not make to locate in the blank pixel region
Reason, forms clear subpixel.
For example, the clear subpixel is formed by colourless material, for example, using inkjet printing on cathode layer, in red picture
Plain region forms red sub-pixel, and in green pixel area amount of green color sub-pixel is formed, and in blank pixel region blank son is formed
Pixel, the clear subpixel is formed by colourless material, and for example, the colourless material includes polyimides (PI), for example, the colourless material
Material includes polyethylene terephthalate (PET), and for example, the colourless material includes PEN (PEN), example
Such as, the colourless material includes epoxy resin.
And for example, protective layer is formed on cathode layer, on the protection layer formed include red sub-pixel, green sub-pixels and
The quantum dot layer of clear subpixel, for example, is formed on the protection layer including red sub-pixel, green sub-pixels using inkjet printing
And the quantum dot layer of clear subpixel,
Step 112, on the quantum layer encapsulated layer is formed.
Specifically, the encapsulated layer adopts PECVD (plasma enhanced chemical vapor deposition) or ALD (ald)
Method is prepared, and for example, is prepared using PECVD methods, and the material for preparing the encapsulated layer is silicon nitride (SiNx), silicon oxide
(SiOx), one kind in carborundum (SiC), silicon oxide carbide (SiOC), silicon oxynitride (SiON), its thickness 0.1 μm~1 μm it
Between；And for example, prepared using ALD methods, the material for preparing the encapsulated layer is aluminium oxide (Al2O3), in zirconium oxide (ZrOx) one
Kind, thickness is between 5nm~100nm.
In the present embodiment, each layer of organic light-emitting display device is formed on the same substrate successively, by directly organic
Luminescent layer forms cathode layer, and quantum dot layer is formed on cathode layer, and sends out without the need for being respectively formed with machine on different substrates
Photosphere and quantum dot layer, so as to reduce the manufacturing process of organic light-emitting display device, can effective reduces cost, improve production
Efficiency.Further, since each layer is that on the same substrate continuous film forming is formed, therefore, each layer after formation has preferably compatible
Property and pliability, the flexibility for realizing showing can be easier to, different display are adapted to, further, since each layer is in same base
Sequentially form on plate, can closely connect between each layer, can be prevented effectively between each layer and there is gap, for example, it is to avoid quantum
There is gap between point layer and organic luminous layer (quantum dot layer and cathode layer), be prevented effectively from the situation for showing colour mixture, make
Obtain display effect more preferably.Further, since each layer is sequentially formed on the same substrate so that originally loaded down with trivial details production process is more simple
It is single, and avoid the less efficient situation for causing organic light-emitting display device luminous because the light transmittance of CF is poor so that
Organic light-emitting display device luminescence display is better.
In one embodiment, step 110 includes：Protective layer is formed on the cathode layer, the shape on the protective layer
Into the quantum dot layer.
For example, protective layer is formed on the cathode layer, being formed on the protective layer includes red sub-pixel, amount of green color
The quantum dot layer of sub-pixel and clear subpixel.
For example, layer protective layer is formed on cathode layer, then forms quantum dot layer on the protection layer.For example, the protection
The material of layer includes silicon nitride (SiNx), for example, using the method for PECVD (plasma enhanced chemical vapor deposition) in negative electrode
Protective layer is formed on layer.For example, the thickness of protective layer is 0.1~1 μm.The protective layer effectively can enter to negative electrode and organic layer
Row protection.
In one embodiment, step 112 includes：The first encapsulated layer, the second envelope are sequentially formed on the quantum dot layer
Dress layer and the 3rd encapsulated layer.
For example, using PECVD (plasma enhanced chemical vapor deposition) and ink-jet technology on the quantum dot layer according to
The first encapsulated layer of secondary formation, the second encapsulated layer and the 3rd encapsulated layer, for example, using PECVD, (PECVD sinks
Product) the first encapsulated layer is formed on the quantum dot layer, for example, the is formed on the quantum dot layer using inkjet technology
Two encapsulated layers, for example, using PECVD (plasma enhanced chemical vapor deposition) the 3rd encapsulation are formed on the second encapsulated layer
Layer.
For example, the first encapsulated layer and the 3rd encapsulated layer are inorganic layer, and the second encapsulated layer is organic matter layer, for example, second
Encapsulated layer is organic stress control layer.
For example, the material of the first encapsulated layer includes silicon nitride (SiNx), and for example, the material of the first encapsulated layer includes titanium dioxide
Silicon (SiOx), for example, the material of the first encapsulated layer includes aluminium oxide (AlOx), and for example, the material of the 3rd encapsulated layer includes nitridation
Silicon (SiNx), for example, the material of the 3rd encapsulated layer includes silicon oxide (SiOx), and for example, the material of the second encapsulated layer includes sub- gram
Power.By the encapsulation of the first encapsulated layer, the second encapsulated layer and the 3rd encapsulated layer to the surface of quantum dot layer so that organic light emission shows
Showing device is effectively protected.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more concrete and detailed, but and
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that for one of ordinary skill in the art comes
Say, without departing from the inventive concept of the premise, some deformations and improvement can also be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be defined by claims.
Claims (10)
1. a kind of organic light-emitting display device, it is characterised in that include：
LTPS substrates；
Anode layer, is formed on the substrate；
Organic luminous layer, is formed on the anode layer, and the organic luminous layer is blue light organic emissive layer；
Cathode layer, is formed on the organic luminous layer；
Quantum dot layer, is formed on the cathode layer, and the quantum dot layer includes red sub-pixel, amount of green color sub-pixel and sky
White sub-pixel；
Encapsulated layer, is formed on the quantum dot layer.
2. organic light-emitting display device according to claim 1, it is characterised in that the red sub-pixel is by red quantum
Point material is formed.
3. organic light-emitting display device according to claim 1, it is characterised in that the green sub-pixels are by green quantum
Point material is formed.
4. organic light-emitting display device according to claim 1, it is characterised in that also including be formed at the cathode layer with
Protective layer between the quantum dot layer.
5. organic light-emitting display device according to claim 1, it is characterised in that the encapsulated layer includes the first encapsulation
Layer, the second encapsulated layer and the 3rd encapsulated layer, first encapsulated layer, second encapsulated layer and the 3rd encapsulated layer shape successively
On quantum dot layer described in Cheng Yu.
6. a kind of manufacture method of organic light-emitting display device, it is characterised in that include：
One LTPS substrates are provided；
Anode layer is formed on the substrate；
Organic luminous layer is formed on the anode layer, the organic luminous layer is used to launch blue light；
Cathode layer is formed on the organic luminous layer；
The quantum dot layer for including red sub-pixel, amount of green color sub-pixel and clear subpixel is formed on the cathode layer；
Encapsulated layer is formed on the quantum dot layer.
7. manufacture method according to claim 6, it is characterised in that formed using inkjet printing include red sub-pixel,
The quantum dot layer of amount of green color sub-pixel and clear subpixel.
8. manufacture method according to claim 6, it is characterised in that it is described formed on the cathode layer include it is red sub
The step of quantum dot layer of pixel, amount of green color sub-pixel and clear subpixel, includes：
Protective layer is formed on the cathode layer, the quantum dot layer is formed on the protective layer.
9. manufacture method according to claim 6, it is characterised in that described the step of form anode layer on the substrate
Include before：
Low-temperature polycrystalline silicon layer is formed on the substrate；
The step of anode layer of formation on the substrate, includes：
The anode layer is formed on the low-temperature polycrystalline silicon layer.
10. manufacture method according to claim 6, it is characterised in that described that encapsulated layer is formed on the quantum layer
Step includes：
The first encapsulated layer, the second encapsulated layer and the 3rd encapsulated layer are sequentially formed on the quantum dot layer.
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Application publication date: 20170517 |