CN108365133A - The preparation method of OLED display modules - Google Patents
The preparation method of OLED display modules Download PDFInfo
- Publication number
- CN108365133A CN108365133A CN201810122830.XA CN201810122830A CN108365133A CN 108365133 A CN108365133 A CN 108365133A CN 201810122830 A CN201810122830 A CN 201810122830A CN 108365133 A CN108365133 A CN 108365133A
- Authority
- CN
- China
- Prior art keywords
- preparation
- oled display
- display modules
- oled
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of preparation methods of OLED display modules, include the following steps：The preparation of the substrate of S1, OLED display module；S2, Nan dian Yao display layer is prepared on the substrate；S3, thin-film encapsulation layer is prepared on the Nan dian Yao display layer, the Nan dian Yao display layer is packaged；S4, quantum dot light conversion film is prepared in the thin-film encapsulation layer, OLED matrixes are made；S5, surface layer protective layer is prepared on the surface of the OLED matrixes, OLED display modules are made.The preparation method of the OLED display modules of the present invention can effectively improve the NTSC and PPI of OLED display modules, meanwhile, preparation process is simple, can effectively reduce the integral thickness and weight of OLED display modules.
Description
Technical field
The present invention relates to a kind of preparation methods of OLED display modules, belong to OLED display manufacturing field.
Background technology
Colour gamut is usually referred to as color space by people, and the color of color space can be showed by representing color image
Concrete condition.People mostly define by the colour gamut of standard of sRGB in computer monitor application aspect, and then more at audio-visual aspect
The NTSC of use is defined, and NTSC is by National Television System Committee (National Television Standards
Committee) it is responsible for a set of standard television broadcast transmission of exploitation and receives agreement, covers wider array of color than sRGB standard.
Currently, the full-color realization of OLED display modules is by the way that colored filter is arranged on white light OLED so that OLED
Full-color display is presented in display module.However, conventional colored filter usually has the disadvantage that：1, the NTSC ratios of colored filter
Poor, usually less than 50% so that the color gamut value and translucency of OLED display modules reduce；2, the conventional glass of colored filter
Thickness is 0.5mm or 0.7mm, and thickness is larger so that integral thickness and weight using the OLED display modules of colored filter increase
Add；3, reduction process can effectively reduce the whole thickness and weight of OLED display modules in the prior art, but OLED shows mould
The reduction process of group is complicated, cost is higher, and finished product yield is low；4, conventional color filter needs be fabricated separately after and OLED
Contraposition fitting is carried out, contraposition fitting difficulty is big, and the NTSC for easily leading to OLED display modules declines.
In the prior art, to solve the problems, such as that above-mentioned colored filter exists, usually using quantum dot light conversion film technology
Improve the color saturation and color gamut value of OLED display modules, principle is to add in high-molecular polymerization membrane red and green
Color quantum dot, the blue light then emitted by Nan dian Yao device deactivate red and green quantum dot in hair film, make its generation
Red and green emitted light, further by RGB three primary colors combination producing white lights, to reach the color for improving OLED display modules
The purpose of saturation degree.
But in actual application, since the addition of red and green quantum dot in high-molecular polymerization membrane is mostly to pass through spray
The method of ink printing or spin coating makes, and causes the low precision of quantum dot light conversion film in the prior art, cannot be satisfied OLED and show
The requirement of module high PPI and high NTSC.
In view of this, being further improved it is necessory to the preparation method to OLED display modules in the prior art to solve
The above problem.
Invention content
The purpose of the present invention is to provide a kind of preparation method of OLED display modules, the preparation sides of the OLED display modules
Method can effectively improve the NTSC and PPI of OLED display modules, meanwhile, preparation process is simple, can effectively reduce OLED display modules
Integral thickness and weight.
For achieving the above object, the present invention provides a kind of preparation methods of OLED display modules, including following step
Suddenly：
The preparation of the substrate of S1, OLED display module；
S2, Nan dian Yao display layer is prepared on the substrate；
S3, thin-film encapsulation layer is prepared on the Nan dian Yao display layer, the Nan dian Yao display layer is packaged；
S4, quantum dot light conversion film is prepared in the thin-film encapsulation layer, OLED matrixes are made；
S5, surface layer protective layer is prepared on the surface of the OLED matrixes, OLED display modules are made.
As a further improvement on the present invention, the step S4 is specially：
S41, quantum dot light conversion material is prepared by matrix of photoresist；
S42, the quantum dot light transition material is coated in the thin-film encapsulation layer；
S43, to coated in the quantum dot light transition material in the thin-film encapsulation layer carry out baking and exposure imaging；
S44, secondary baking solidification is carried out to the quantum dot light transition material after exposure imaging, is converted so that quantum dot light is made
Film further obtains OLED matrixes.
As a further improvement on the present invention, the step S41 is specially：
S411, quanta point material is added into photoresist；
S412, the quanta point material being added in photoresist is disperseed using the method for ultrasonic vibration, and to the light
Surfactant is added in photoresist, to ensure that quanta point material is evenly dispersed in the photoresist.
As a further improvement on the present invention, the quanta point material includes one in CdSe, CdS, CdTe, SiC, ZnO
Kind is several.
As a further improvement on the present invention, the surfactant is one in sodium stearyl sulfate or odium stearate
Kind is several.
As a further improvement on the present invention, the quantum dot light conversion film includes red light quantum point light conversion film and green light
Quantum dot light conversion film.
As a further improvement on the present invention, the substrate includes the display driving electricity of matrix, setting on the matrix
Road and pixel-driving circuit, the substrate are prepared using manufacture of semiconductor technology.
As a further improvement on the present invention, the substrate is prepared by the way of dry etching and sputtering.
As a further improvement on the present invention, the surface layer protective layer is made of SiO, SiN or PET material.
As a further improvement on the present invention, the surface layer protective layer is pasted onto the OLED bases by transparent resin material
The surface of body.
The beneficial effects of the invention are as follows：The preparation method of the OLED display modules of the present invention passes through in Nan dian Yao display layer
Upper setting coating, solidification have the thin-film encapsulation layer of quantum dot light conversion film, avoid the use of colored filter, effectively reduce
Use the weight and thickness of OLED display modules prepared by the preparation method of the OLED display modules of the present invention；And improving OLED
While the PPI of display module so that the NTSC of OLED display modules is increased to 100% or more.
Description of the drawings
Fig. 1 is the flow chart of the preparation method of OLED display modules of the present invention.
Fig. 2 is the flow chart of step S4 in Fig. 1.
Specific implementation mode
To make the objectives, technical solutions, and advantages of the present invention clearer, right in the following with reference to the drawings and specific embodiments
The present invention is described in detail.
Refering to Figure 1, the flow chart of the preparation method for OLED display modules of the present invention.The OLED display modules
Preparation method, include the following steps：
The preparation of the substrate of S1, OLED display module；
S2, Nan dian Yao display layer is prepared on the substrate；
S3, thin-film encapsulation layer is prepared on the Nan dian Yao display layer, the Nan dian Yao display layer is packaged；
S4, quantum dot light conversion film is prepared in the thin-film encapsulation layer, OLED matrixes are made；
S5, surface layer protective layer is prepared on the surface of the OLED matrixes, OLED display modules are made.
Following description part will elaborate for step S1~S5.
In the step S1, the substrate includes that matrix, setting display driver circuit on the matrix and pixel are driven
Dynamic circuit (tft array) is further additionally provided with OLED on the display driver circuit and pixel-driving circuit (tft array)
Anode layer.Specifically, the display driver circuit, the pixel-driving circuit and the OLED anode layers pass through semiconductor
Process technique is prepared, to ensure the width of the slit on the substrate in 80nm or less；Meanwhile when using manufacture of semiconductor
When technology prepares the substrate, the OLED anode layers are using film layer structure made of Al and TiN.
Certainly in other embodiments, the display driver circuit, the pixel-driving circuit and the OLED anode layers
It can also be prepared by the way of dry etching and sputtering, and at this point, the material of the OLED anode layers is Ag and ITO (oxidations
Indium tin).
It should be noted that in the present invention, the preparation method of the preparation of the substrate and the substrate of the prior art is basic
Unanimously, therefore the preparation flow of the substrate is repeated no more in this.
The step S2 in the substrate specifically, be provided with OLED anode layers or display driver circuit and pixel driver electricity
Blue light OLRD functional layers are deposited in the side on road (tft array) successively, and the vapor deposition of the Nan dian Yao functional layer need to pass through mask plate
It carries out, the mask plate may be either the high-precision metal mask plate being made of metal material in the present invention, or use
Mask plate made of other materials, such as silicon substrate mask plate, so set, Nan dian Yao functional layer vapor deposition can be further ensured that
Accuracy；To prepare high-precision Nan dian Yao display layer.
The step S3 prepares thin-film package specifically, using thin film encapsulation technology on the Nan dian Yao display layer
Layer, is packaged the Nan dian Yao display layer.
It please refers to shown in Fig. 2, the step S4 is specially：
S41, quantum dot light conversion material is prepared by matrix of photoresist；
S42, the quantum dot light transition material is coated in the thin-film encapsulation layer；
S43, to coated in the quantum dot light transition material in the thin-film encapsulation layer carry out baking and exposure imaging；
S44, secondary baking solidification is carried out to the quantum dot light transition material after exposure imaging, is converted so that quantum dot light is made
Film further obtains OLED matrixes.
Further, the step S41 is specially in the present invention：
S411, quanta point material is added into photoresist；
S412, the quanta point material being added in photoresist is disperseed using the method for ultrasonic vibration, and to the light
Surfactant is added in photoresist, to ensure that quanta point material is evenly dispersed in the photoresist.
Specifically, the preparation of the photoresist in the present invention include solvent, PGMEA (propylene glycol methyl ether acetate),
Common polymer material in the photoresists preparation process such as resin and auxiliary agent, i.e., in the present invention, the preparation of the photoresist with
The preparation method of photoresist is almost the same in the prior art, therefore the preparation flow of the photoresist is repeated no more in this.
After prepared by the photoresist, quanta point material is added into the photoresist, the quanta point material includes
One or more of CdSe, CdS, CdTe, SiC, ZnO；Then, quanta point material is divided using the method for ultrasonic vibration
It dissipates, to ensure that quanta point material is evenly dispersed in the photoresist；Certainly in other embodiments, the dispersion of the quanta point material
It can also by other means progress；Further, it when quanta point material is added into the photoresist and disperses, needs simultaneously
Surfactant is added into the photoresist, is made with being further ensured that quanta point material is uniformly dispersed in the photoresist
The light conversion material stablized at property；Meanwhile in an embodiment of the present invention, the surfactant is sodium stearyl sulfate
(C18H37-SO3) or odium stearate (C Na17H35One or more of-COONa), certainly in other embodiments, the surface
Activating agent can also be other materials.
In the step S42, quantum dot light transition material made from the step S41 need to be coated uniformly on the step
In rapid S3 in thin-film encapsulation layer obtained, and baking and exposure imaging are carried out to it, in the quantum dot light transition material
It is upper that corresponding pixel graphics are made；After prepared by pixel graphics, two are carried out to the quantum dot light transition material after exposure imaging
Secondary baking-curing so that polymerisation occurs for the organic semiconducting materials in the group and photoresist on quantum dot nucleocapsid,
The abundant volatilization for effectively facilitating light conversion material internal solvent simultaneously, promotes light conversion material rapid draing, to form solid height
Precision quantum dot light conversion film.
It should be noted that in the present invention, the quantum dot light transition material includes red light quantum point light conversion material
And green light quantum point light conversion material, the red light quantum point light conversion material and green light quantum point light conversion material are separately added into
To prepare red light quantum point light conversion film and green light quantum point light conversion film, and the red light quantum point respectively in the photoresist
Light conversion film and green light quantum point light conversion film need to be coated, be toasted respectively, the solidification of exposure imaging and secondary baking, with into one
Step ensures the preparation precision and effect of quantum dot light conversion film.
In the step S5, in the quantum dot light conversion film, i.e., through the thin-film encapsulation layer with quantum dot light conversion film
The surface of the OLED matrixes of the Nan dian Yao display layer of encapsulation prepares surface layer protective layer；In the present invention, the surface layer protective layer
For using encapsulated layer made of SiO, SiN or PET material；Further, in the present invention the surface layer protective layer pass through it is transparent
Resin material is pasted onto the surface of the OLED matrixes, to prepare OLED display modules；Certainly in other embodiments, the table
Layer protective layer can be also arranged on the surface of the OLED matrixes by other materials/method.
In conclusion the preparation method of the OLED display modules of the present invention passes through the thin-film package in Nan dian Yao display layer
It coated on layer, cure quantum dot light conversion film (red light quantum point light conversion film and green light quantum point light conversion film), avoid coloured silk
The use of colo(u)r filter effectively reduces the OLED display modules prepared using the preparation method of the OLED display modules of the present invention
Weight and thickness；And while improving the PPI of OLED display modules so that the NTSC of OLED display modules is increased to
100% or more.
The above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although with reference to preferred embodiment to this hair
It is bright to be described in detail, it will be understood by those of ordinary skill in the art that, it can modify to technical scheme of the present invention
Or equivalent replacement, without departing from the spirit of the technical scheme of the invention and range.
Claims (10)
1. a kind of preparation method of OLED display modules, which is characterized in that include the following steps：
The preparation of the substrate of S1, OLED display module；
S2, Nan dian Yao display layer is prepared on the substrate；
S3, thin-film encapsulation layer is prepared on the Nan dian Yao display layer, the Nan dian Yao display layer is packaged；
S4, quantum dot light conversion film is prepared in the thin-film encapsulation layer, OLED matrixes are made；
S5, surface layer protective layer is prepared on the surface of the OLED matrixes, OLED display modules are made.
2. the preparation method of OLED display modules according to claim 1, it is characterised in that：The step S4 is specially：
S41, quantum dot light conversion material is prepared by matrix of photoresist；
S42, the quantum dot light transition material is coated in the thin-film encapsulation layer；
S43, to coated in the quantum dot light transition material in the thin-film encapsulation layer carry out baking and exposure imaging；
S44, secondary baking solidification is carried out to the quantum dot light transition material after exposure imaging, quantum dot light conversion film is made,
Further obtain OLED matrixes.
3. the preparation method of OLED display modules according to claim 2, which is characterized in that the step S41 is specially：
S411, quanta point material is added into photoresist；
S412, the quanta point material being added in photoresist is disperseed using the method for ultrasonic vibration, and to the photoresist
Interior addition surfactant, to ensure that quanta point material is evenly dispersed in the photoresist.
4. the preparation method of OLED display modules according to claim 3, it is characterised in that：The quanta point material includes
One or more of CdSe, CdS, CdTe, SiC, ZnO.
5. the preparation method of OLED display modules according to claim 3, it is characterised in that：The surfactant is ten
One or more of octadecyl sodium sulfate or odium stearate.
6. the preparation method of OLED display modules according to claim 1, it is characterised in that：The quantum dot light conversion film
Including red light quantum point light conversion film and green light quantum point light conversion film.
7. the preparation method of OLED display modules according to claim 1, it is characterised in that：The substrate include matrix,
Display driver circuit and pixel-driving circuit on the matrix be set, the substrate prepared using manufacture of semiconductor technology and
At.
8. the preparation method of OLED display modules according to claim 7, it is characterised in that：The substrate using dry etching and
It is prepared by the mode of sputtering.
9. the preparation method of OLED display modules according to claim 1, it is characterised in that：The surface layer protective layer uses
SiO, SiN or PET material are made.
10. the preparation method of OLED display modules according to claim 9, it is characterised in that：The surface layer protective layer is logical
Cross the surface that transparent resin material is pasted onto the OLED matrixes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810122830.XA CN108365133A (en) | 2018-02-07 | 2018-02-07 | The preparation method of OLED display modules |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810122830.XA CN108365133A (en) | 2018-02-07 | 2018-02-07 | The preparation method of OLED display modules |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108365133A true CN108365133A (en) | 2018-08-03 |
Family
ID=63005092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810122830.XA Pending CN108365133A (en) | 2018-02-07 | 2018-02-07 | The preparation method of OLED display modules |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108365133A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110120458A (en) * | 2019-05-23 | 2019-08-13 | 京东方科技集团股份有限公司 | A kind of electroluminescent device and production method |
| CN112201678A (en) * | 2020-09-30 | 2021-01-08 | 云南北方奥雷德光电科技股份有限公司 | High-color-saturation silicon-based OLED (organic light emitting diode) micro display and preparation method thereof |
| WO2021170079A1 (en) * | 2020-02-28 | 2021-09-02 | 京东方科技集团股份有限公司 | Display panel and manufacturing method therefor, and display device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030222576A1 (en) * | 2002-05-28 | 2003-12-04 | Ritdisplay Corporation | Full color organic light-emitting display device |
| CN104576961A (en) * | 2014-12-03 | 2015-04-29 | 深圳丹邦投资集团有限公司 | Quantum-dot-based white OLEG device and manufacturing method thereof |
| CN106098697A (en) * | 2016-06-15 | 2016-11-09 | 深圳市华星光电技术有限公司 | Micro-LED display panel and preparation method thereof |
| CN106684112A (en) * | 2016-11-23 | 2017-05-17 | 信利（惠州）智能显示有限公司 | Organic light emitting display device and manufacture method thereof |
| CN106920901A (en) * | 2017-05-11 | 2017-07-04 | 安徽熙泰智能科技有限公司 | A kind of Full-color OLED micro-display device production method |
| CN106957645A (en) * | 2017-03-17 | 2017-07-18 | 青岛海信电器股份有限公司 | A kind of quanta point material, quantum dot light photoresist and preparation method thereof |
| CN107102514A (en) * | 2017-05-08 | 2017-08-29 | 苏州星烁纳米科技有限公司 | Quantum dot light photoresist, quantum dot color membrane substrates and display device |
-
2018
- 2018-02-07 CN CN201810122830.XA patent/CN108365133A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030222576A1 (en) * | 2002-05-28 | 2003-12-04 | Ritdisplay Corporation | Full color organic light-emitting display device |
| CN104576961A (en) * | 2014-12-03 | 2015-04-29 | 深圳丹邦投资集团有限公司 | Quantum-dot-based white OLEG device and manufacturing method thereof |
| CN106098697A (en) * | 2016-06-15 | 2016-11-09 | 深圳市华星光电技术有限公司 | Micro-LED display panel and preparation method thereof |
| CN106684112A (en) * | 2016-11-23 | 2017-05-17 | 信利（惠州）智能显示有限公司 | Organic light emitting display device and manufacture method thereof |
| CN106957645A (en) * | 2017-03-17 | 2017-07-18 | 青岛海信电器股份有限公司 | A kind of quanta point material, quantum dot light photoresist and preparation method thereof |
| CN107102514A (en) * | 2017-05-08 | 2017-08-29 | 苏州星烁纳米科技有限公司 | Quantum dot light photoresist, quantum dot color membrane substrates and display device |
| CN106920901A (en) * | 2017-05-11 | 2017-07-04 | 安徽熙泰智能科技有限公司 | A kind of Full-color OLED micro-display device production method |
Non-Patent Citations (1)
| Title |
|---|
| 高鸿锦 等: "《液晶与平板显示技术》", 30 June 2007, 北京邮电大学出版社 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110120458A (en) * | 2019-05-23 | 2019-08-13 | 京东方科技集团股份有限公司 | A kind of electroluminescent device and production method |
| WO2021170079A1 (en) * | 2020-02-28 | 2021-09-02 | 京东方科技集团股份有限公司 | Display panel and manufacturing method therefor, and display device |
| US12029097B2 (en) | 2020-02-28 | 2024-07-02 | Boe Technology Group Co., Ltd. | Display panel, method for manufacturing the same and display device |
| CN112201678A (en) * | 2020-09-30 | 2021-01-08 | 云南北方奥雷德光电科技股份有限公司 | High-color-saturation silicon-based OLED (organic light emitting diode) micro display and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104965333B (en) | COA type liquid crystal display panels and preparation method thereof | |
| TWI396464B (en) | Organic electroluminescent display device and method for fabricating thereof | |
| US9722005B2 (en) | Light-emitting device, array substrate, display device and manufacturing method of light-emitting device | |
| WO2021174615A1 (en) | Quantum dot display panel and preparation method therefor | |
| US20150194629A1 (en) | Organic light-emitting diode (oled) display panel, pixel define layer (pdl) and preparation method thereof | |
| US20200144557A1 (en) | High-resolution micro-oled display module and manufacturing method thereof | |
| US20210336100A1 (en) | Display device and manufacturing method of display device | |
| US20190189923A1 (en) | Electroluminescent substrate plate, method for manufacturing the same and display device | |
| CN108365133A (en) | The preparation method of OLED display modules | |
| WO2020001061A1 (en) | Display substrate and manufacturing method therefor, and display device | |
| US12012539B2 (en) | Quantum dot layer and manufacturing method thereof, quantum dot color filter, color filter substrate, display panel, and display device | |
| CN109671365A (en) | Micro-LED display base plate and preparation method thereof, display device | |
| US20210005840A1 (en) | Display substrate, method for manufacturing the same and display device | |
| US9412797B2 (en) | Array substrate with color film | |
| WO2018160018A2 (en) | Hybrid quantum dot organic light emitting display device and manufacturing method therefor | |
| WO2020224010A1 (en) | Oled display panel and manufacturing method therefor | |
| WO2023071911A1 (en) | Wavelength conversion matrix and manufacturing method therefor | |
| WO2021093028A1 (en) | Color film substrate and preparation method therefor | |
| WO2021031302A1 (en) | Sub-pixel structure, and organic light-emitting diode display screen and manufacturing method therefor | |
| WO2021142886A1 (en) | Display panel and preparation method therefor, and display device | |
| WO2023071914A1 (en) | Microdisplay device and manufacturing method therefor | |
| CN113097242A (en) | High-resolution micro-display structure and preparation method thereof | |
| CN108231857B (en) | OLED microcavity structure, preparation method thereof and display device | |
| US20240057458A1 (en) | Display panel, display device and manufacturing method for display panel | |
| WO2021164105A1 (en) | Display panel and manufacturing method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20190530 Address after: 215300 Room No. 188 Chenfeng Road, Yushan Town, Kunshan City, Suzhou City, Jiangsu Province Applicant after: Kunshan Mengxian Electronic Technology Co., Ltd. Address before: Room D1-7179, 58 Fumin Branch, Hengsha Township, Chongming District, Shanghai, 202150 (Shanghai Hengtai Economic Development Zone) Applicant before: Shanghai Han Li Electronic Technology Co. Ltd. |
|
| TA01 | Transfer of patent application right | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180803 |
|
| RJ01 | Rejection of invention patent application after publication |