CN107102514A - Quantum dot light photoresist, quantum dot color membrane substrates and display device - Google Patents
Quantum dot light photoresist, quantum dot color membrane substrates and display device Download PDFInfo
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- CN107102514A CN107102514A CN201710319686.4A CN201710319686A CN107102514A CN 107102514 A CN107102514 A CN 107102514A CN 201710319686 A CN201710319686 A CN 201710319686A CN 107102514 A CN107102514 A CN 107102514A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
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Abstract
A kind of quantum dot light photoresist, including photoresist mother liquor and the quantum dot being dispersed in the photoresist mother liquor, the photoresist mother liquor includes adhesive, photoresist monomer, light or thermal initiator, can dissolve the solvent and active additive of photoresist, the surface ligand of the quantum dot includes the polymerizable groups that can be copolymerized with the photoresist monomer, the quantum dot light photoresist is after illumination or heating, and the surface ligand of the quantum dot is copolymerized with the photoresist monomer.The solubility and stable luminescent property of quantum dot are improved by the present invention.The invention also provides a kind of quantum dot color membrane substrates and display device.
Description
Technical field
The present invention relates to technology of quantum dots field, and in particular to a kind of quantum dot color membrane substrates and use the quantum stippling film
The display device of substrate.
Background technology
The color of current liquid crystal display (LCD, Liquid Crystal Display) be by color membrane substrates (CF,
Color filter) realize.It is colored that color membrane substrates realize CF by pigment (pigment).The white produced from backlight
Light, the light for only corresponding to R, G, B wave band is passed through, and the light of its all band is absorbed by pigment (pigment).By CF wide portion
Divide and absorbed, only very little part light is passed through, the utilization rate of light is extremely low.In addition, its hardly possible is presented in the characteristic of organic pigment in itself
The color of wider colour gamut.Due to disadvantage mentioned above, quantum dot (QD, Quantum dots) material is incorporated into by art personnel
In color membrane substrates, to replace photoresist.
Quantum dot is some extremely small semiconductor nanocrystals, is referred to as fluorescent nano material of new generation, it has
Glow color passes through accurate size with excellent specific properties such as change in size is adjustable, phototranstormation efficiency is high, emission spectrum half-peak width
Control, can just send bright-coloured R, G, B light after being stimulated, have in fields such as display, biomarker, solar cells extensive
Application.Especially in display field, technology of quantum dots has been carried out industrialization.
The light that backlight is sent directly can be converted into the color of R, G, B tri- by quantum dot, rather than only be sponged, so as to improve coloured silk
The light utilization ratio of ilm substrate；The light half-peak width that quantum dot is sent, can show higher colour gamut, reduce more real generation
Boundary's color.
In the prior art, quantum dot light photoresist generally existing quantum dot solubility is low, stability is poor, the poor and base of etching property
The problem of plate cementability is poor.
The content of the invention
The technical problems to be solved by the invention are：A kind of quantum dot light photoresist is provided, quantum dot is improved in the photoresist
It is deliquescent simultaneously, it is ensured that the stability of quantum dot optical property and the etch property of photoresist.
The invention provides a kind of quantum dot light photoresist, including photoresist mother liquor and it is dispersed in the photoresist mother liquor
In quantum dot, the photoresist mother liquor include adhesive, photoresist monomer, light or thermal initiator, can dissolve photoresist it is molten
Agent and active additive, the surface ligand of the quantum dot include the polymerizable group that can be copolymerized with the photoresist monomer
Group, the quantum dot light photoresist is after illumination or heating, and the surface ligand of the quantum dot occurs with the photoresist monomer
Copolymerization.
Preferably, the mass percent of the quantum dot is 5%~50%, and the mass percent of described adhesive is 5%
~30%, the mass percent of the monomer is 2%~18%, and the mass percent of the light trigger is 0.5%~6%,
The mass percent of the solvent of the dissolvable photoresist is 20%~70%, and the mass percent of the active additive is
1%~5%.
Preferably, the quantum dot light photoresist also includes the filter being dispersed in the photoresist mother liquor, institute
State the light that filter is used to absorb non-excitation quantum point material.
Preferably, mass fraction scope of the filter in the quantum dot light photoresist is 0.1%-5%.
Preferably, the polymerizable groups include double bond, substitution or the acrylic not replaced.
Preferably, the end group of the surface ligand of the quantum dot is the photoresist monomer.
Preferably, the surface ligand of the quanta point material also include molecular weight within 1000 and can be with the light
The uniform miscible crosslinked group of photoresist mother liquor.
Preferably, the crosslinked group includes the polymer segment with lewis base function.
Preferably, the crosslinked group includes substituted or unsubstituted polyethylene glycol segment, substitution or not taken
The poly- silica segment in generation.
Preferably, the quantum dot light photoresist also includes the light diffusing agent being dispersed in the photoresist mother liquor.
Preferably, the light diffusing agent is the inorganic nanoparticles with surface-modifying groups, the surface-modifying groups
Surface ligand crosslinking with the quantum dot is miscible, and the quantum dot absorption is on the light diffusing agent surface.
Preferably, the quantum dot light photoresist is after illumination or heating, and the surface of the inorganic nanoparticles is modified base
Group and polymerizable groups, the photoresist monomer of the quantum dot are copolymerized.
Preferably, the quantum dot be core shell structure, the core include CdSe, CdS, CdTe, ZnTe, ZnSe, ZnS,
InP、 InAs、GaN、GaP、InZnP、InGaP、InGaZnP、GaAs、CdZnSe、CdZnSeS、CdZnS、CdZnTe、InZnAs
At least one of, the shell is included in ZnS, ZnSe, ZnSeS, CdS, CdSe, CdSeS, ZnTe, CdTe, CdZnTe extremely
Few one kind.
Present invention also offers a kind of quantum dot color membrane substrates, including underlay substrate and it is distributed on the underlay substrate
Multiple pixels, each pixel includes the color sub-pixel of some different colours, and at least one described color sub-pixel is using as above
Described quantum dot light photoresist is made.
Preferably, the color sub-pixel includes red sub-pixel, green sub-pixels and blue subpixels, the red son
Pixel includes red light quantum point material, and the green sub-pixels include green light quantum point material, and the blue subpixels include indigo plant
Light quanta point material or transparent material.
It is described present invention also offers a kind of display device, including backlight and quantum dot color membrane substrates as described above
The wavelength of light that backlight is sent is less than the light ripple sent after the quanta point material in the quantum dot color membrane substrates is excited
It is long.
The invention has the advantages that：The quantum dot color membrane substrates of the present invention can greatly improve quantum dot in photoetching
Solubility in glue, while reducing influence of the quantum dot to photoresist film forming and etching property, it is to avoid quantum dot is to photoetching
The adhesive of glue and glass substrate is deteriorated, and the optical property and stability of quantum dot in the photoresist are also improved in addition.
Brief description of the drawings
Fig. 1 is a kind of embodiment schematic diagram of quantum dot light photoresist of the present invention；
A kind of embodiment schematic diagrams of the Fig. 2 for quantum dot light photoresist of the present invention after cured；
Fig. 3 is a kind of embodiment schematic diagram of the quantum dot color membrane substrates of the present invention.
Embodiment
Below in conjunction with embodiment of the present invention, the technical scheme in the embodiment of the present invention is described in detail, shown
So, described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based in the present invention
Embodiment, the every other implementation that those of ordinary skill in the art are obtained on the premise of creative work is not made
Mode, belongs to the scope of the present invention.
Unless otherwise defined, the technical term or scientific terminology that the disclosure is used should be tool in art of the present invention
The ordinary meaning that the personage for having general technical ability is understood." first ", " second " that is used in the disclosure and similar word are simultaneously
Any order, quantity or importance are not indicated that, and is used only to distinguish different parts." comprising " or "comprising" etc.
The element or object that similar word means to occur before the word cover the element or object for appearing in the word presented hereinafter
And its it is equivalent, and it is not excluded for other elements or object.The Figure of description of the present invention is only the signal of technical solution of the present invention
Property figure, its each dimension scale is to be the reference of description of the invention word content.
In order to adapt to the accurate demand of display device, the photoresist for color membrane substrates is that a kind of technology content is very high
Glue, there is specific material to constitute and be formulated for it, and its each trickle variation constituted may have influence on its lithography performance.
And in the formula for the photoresist for being introduced into quantum dot it is a kind of great creative work.The research staff of applicant has found, is
Meet the demand of light conversion, the solubility of quantum dot in the photoresist should try one's best raising, and holding optical stabilization.Quantum dot is mixed
Conjunction is dissolved into be needed to reach that certain concentration is just more effective in photoresist.However, the concentration with quantum dot in the photoresist
Improve, the destruction that the physical property of photoresist in itself is subject to is also more serious, such as cause film forming to be deteriorated, lithography performance declines and and substrate
Cementability is deteriorated.
In view of the above-mentioned problems, as shown in figure 1, the invention discloses a kind of quantum dot light photoresist 100, including photoresist mother liquor
With the quantum dot 102 being dispersed in photoresist mother liquor, photoresist mother liquor includes adhesive 104, photoresist monomer 106, light
Or thermal initiator 108, the solvent 110 and active additive 112 that can dissolve photoresist, the surface ligand of quantum dot 102 includes energy
The polymerizable groups (not shown) being copolymerized with photoresist monomer, quantum dot light photoresist 100 after illumination or heating,
The surface ligand of quantum dot 102 is copolymerized with the photoresist monomer.
As shown in Fig. 2 quantum dot light photoresist 100 is after hardening, quantum dot 102 forms one with the copolymerization of photoresist monomer 106
Individual entirety, achieves the increase of quantum dot solubility, the raising of quantum dot stability, the raising of photoresist film forming and and substrate bonding
Property strengthen effect.
Polymerizable groups include double bond or substitution or the acrylic acid not replaced.In one preferred embodiment,
Polymerizable groups are the photoresist monomer in photoresist mother liquor.In a preferred embodiment, adhesive is acrylic resin,
Photoresist monomer is acrylic monomer, and quantum dot surface part includes being arranged on the acrylic acid groups of part end, light-initiated
Agent is Benzophenone-type light initiator, and the solvent that can dissolve photoresist is propylene glycol methyl ether acetate solvent, and active additive is
Silane coupler.
In one preferred embodiment, quantum dot surface includes the first part, and the first part includes metal-complexing base
Group, crosslinked group and polymerizable groups.Preferably, the molecular weight of crosslinked group within 1000 and can be with the photoresist
Mother liquor is uniformly miscible.It is highly preferred that the molecular weight of crosslinked group is in 200-800.In a preferred embodiment, crosslinked group
Including the polymer segment with lewis base function.Preferably, polymer segment includes substitution or unsubstituted poly- second two
Alcohol segment, substitution or unsubstituted poly- silica segment.
In one preferred embodiment, quantum dot surface part includes the first part, and the first part is matched somebody with somebody including metal
Position group, at least one the polyethylene glycol segment being connected with metal complexing groups, at least one being connected with metal complexing groups
Hydrophobic group, the acrylic acid groups being connected with polyethylene glycol segment.Preferably, quantum dot surface part is also matched somebody with somebody including second
Body.
In one preferred embodiment, the formula of quantum dot light photoresist is as follows：The mass percent of quantum dot is 5%
~50%, the mass percent of adhesive is 5%~30%, and the mass percent of photoresist monomer is 2%~18%, light or
The mass percent of thermal initiator is 0.5%~6%, and the mass percent that can dissolve the solvent of photoresist is 20%~70%,
The mass percent of active additive is 1%~5%.
In one preferred embodiment, the light for as far as possible many unawakened backlights of absorption and reduction photoetching
In the consumption of glue mother liquor, quantum dot light photoresist, the mass percent of quantum dot is 30%~40%.Pass through the present invention, quantum dot
Solubility increase in photoresist mother liquor, the performance more stability and high efficiency of quantum dot.
In one preferred embodiment, in order to fully absorb the light of the non-excitation quantum point that backlight is sent, quantum
Point photoresist also includes the filter (Photo resist) being dispersed in photoresist mother liquor, and filter is used to absorb
The light of non-excitation quantum point material.Mass fraction of the filter in quantum dot light photoresist ranges preferably from 0.1%-5%,
More preferably 1%-4%.
In one preferred embodiment, it is the utilization rate of raising backlight light-emitting line, increase is luminous to backlight
The refraction of light, increases the light for being irradiated to quantum dot, and quantum dot light photoresist also includes being dispersed in photoresist mother liquor
Light diffusing agent.For dispersion amount and uniformity of the increase light diffusing agent in photoresist mother liquor, preferred pair light diffusing agent surface is entered
Row moditied processing.
In one preferred embodiment, light diffusing agent is the inorganic nanoparticles with surface-modifying groups, surface
The surface ligand crosslinking of modified group and quantum dot is miscible, and quantum dot is adsorbed on light diffusing agent surface.It is preferable to carry out at another
In mode, light diffusing agent is the inorganic nanoparticles with surface-modifying groups, states quantum dot light photoresist through illumination or heating
Afterwards, the surface-modifying groups of inorganic nanoparticles and polymerizable groups, the photoresist monomer of the quantum dot are copolymerized.Light expands
Mass percent scope of the powder in quantum dot light photoresist is 2%-20%.
The present invention quantum dot include II races-Group VIA compound, IV races-Group VIA compound, III-VA compounds of group,
At least one of I races-VIA compounds of group.The structure of quantum dot include have mononuclear structure, core-individual layer shell structure and core-
One kind in multilayer shell structure.Preferably, I races element is included from by least one of copper, silver group element, and II races element includes
At least one of zinc, cadmium, mercury element, group-III element includes at least one of aluminium, gallium, indium element, and IV races element includes
At least one of silicon, germanium, tin, lead element, VA races element includes at least one of nitrogen, phosphorus, arsenic element, Group VIA element bag
Include at least one of sulphur, selenium, tellurium element.The quantum dot of the present invention also includes the quantum dot of perovskite structure.The amount of the present invention
Son point also includes the semiconductor nanocrystal of the one or more transition-metal cations of chemical doping, the transition metal sun of doping from
Attached bag includes Mn2+、Cu2+、Co2+Plasma.It is that quantum dot of the invention is core shell structure, core bag in preferred embodiment
Include CdSe, CdS, CdTe, ZnTe, ZnSe, ZnS, InP, InAs, GaN, GaP, InZnP, InGaP, InGaZnP, GaAs,
At least one of CdZnSe, CdZnSeS, CdZnS, CdZnTe, InZnAs, shell include ZnS, ZnSe, ZnSeS, CdS,
At least one of CdSe, CdSeS, ZnTe, CdTe, CdZnTe.
As shown in figure 3, the invention discloses a kind of quantum dot color membrane substrates 200, including underlay substrate 202, it is arranged on lining
On substrate 202 be used for separate different colours color sub-pixel black matrix 204, be distributed in it is many on underlay substrate 202
Individual pixel 206, the diaphragm 208 for being arranged on the surface of pixel 206 and the ITO conducting films 210 for being arranged on the surface of diaphragm 208.
Each pixel 206 includes the color sub-pixel 212 of some different colours, and at least one color sub-pixel 212 is using as described above
Quantum dot light photoresist be made.Quantum dot light photoresist through transfer, coating, printing, inkjet printing, electricity the method such as method, photoetching set
Put in color sub-pixel 106.Color sub-pixel 212 includes red sub-pixel 212A, green sub-pixels 212B, blue subpixels
212C.Red sub-pixel 212A includes red light quantum point material, and green sub-pixels 212B includes green light quantum point material, blueness
Pixel 212C includes blue light quantum point material or transparent material.The light that quanta point material is produced after being excited and corresponding colored son
The color of pixel 212 is identical.
In a detailed embodiment, quantum dot color membrane substrates 200 also include the optical filtering being arranged in color sub-pixel
Layer (not shown), the light for further absorbing non-excitation quantum point material.Filter layer includes photosensitive resin composition
Thing, is specifically included including alkali soluble resin, polymerisable monomer, initiator, yellow uitramarine, dispersant, additive and solvent.
Also a kind of display device of the present invention, including backlight and quantum dot color membrane substrates 200 as described above, backlight hair
The wavelength of light gone out is less than the wavelength of light sent after the quanta point material in the quantum dot color membrane substrates is excited.Display dress
Put including liquid crystal panel, Electronic Paper, oled panel, mobile phone, tablet personal computer, television set, display, notebook computer, digital phase
Any product or part with display function such as frame, navigator.
In a preferred embodiment, backlight is blue LED, and the wave-length coverage of transmitting light is 440-
470nm.After blue ray is irradiated on red light quantum point, red light quantum point is excited and sent the light of red by blue ray
Line, red light is projected from the light emission side of color sub-pixel；After blue ray is irradiated on green light quantum point, green light quantum point by
Green light is sent to exciting for blue ray, green light is projected from the light emission side of color sub-pixel；Work as blue ray
When being irradiated to light diffusing agent, light diffusing agent can be reflected to blue ray, after blue ray is refracted, part blueness line
It can be refracted to quantum dot, continue to inspire red or green light rays, another part is not refracted the blue ray to quantum dot,
Projected from the light emission side of color sub-pixel.Pass through completely when blue ray is irradiated on blue subpixels, from color sub-pixel
Light emission side is projected.Blue subpixels are transparent region.
When the concentration of quantum dot is sufficiently large, in the case of no filter, blue light can be completely absorbed.One
It is individual preferred embodiment in, mass percent of the red light quantum point in quantum dot light photoresist be not less than 30%, light diffusing agent
Mass percent in quantum dot light photoresist is not less than 5%, and the thickness of red sub-pixel is not less than 2 microns, blue light quilt completely
Red sub-pixel absorbs.Mass percent of the green light quantum point in quantum dot light photoresist is not less than 20%, and light diffusing agent is in amount
Mass percent in son point photoresist is not less than 10%, and the thickness of green sub-pixels is not less than 2 microns, and blue light is completely green
Sub-pixel absorbs.
In a preferred embodiment, backlight is ultraviolet light-emitting diodes, and the wave-length coverage of transmitting light is
200‐400nm。
Present invention also offers a kind of preparation method of quantum dot color membrane substrates, including step：By quanta point material and light
After photoresist mother liquor dissolves each other, set to color membrane substrates glass baseplate surface, by heating or illumination trigger photoresist monomer and
Quanta point material is copolymerized, and is cured as an entirety, then further sets protective layer and conducting film.
Embodiment 1
The quantum dot of polysorbas20 modification containing 200mg QD is mixed with 500mg photoresist mother liquors, photoresist mother liquor bag
Include adhesive, photoresist monomer, light or thermal initiator, can dissolve the solvent and active additive of photoresist；It is well mixed, mix
Conjunction mode is by way of ultrasound or stirring, and the mode of stirring includes mechanical agitation, magnetic agitation etc.；Rotary evaporation of solvent, is obtained
To dispersed quantum dot light photoresist.Quantum dot light photoresist is coated on the glass substrate with black matrix", passes through light
According to or heating carry out photoetching, formed color sub-pixel；Protective layer and ITO conducting films are set gradually again, form quantum stippling film
Substrate.
Embodiment 2
By containing 100mg QD's and the degree of polymerization mixed for 40 polyethyleneglycol modified quantum dot with 500mg photoresist mother liquors
Close, photoresist mother liquor includes adhesive, photoresist monomer, light or thermal initiator, the solvent of dissolvable photoresist and activity and added
Plus agent；After well mixed, hybrid mode is by way of ultrasound or stirring, and the mode of stirring includes mechanical agitation, magnetic agitation
Deng；Rotary evaporation of solvent, obtains dispersed quantum dot light photoresist.Quantum dot light photoresist is coated to black matrix"
On glass substrate, photoetching is carried out by illumination or heating, color sub-pixel is formed, then set gradually protective layer and ITO conductions
Film, forms quantum stippling ilm substrate.
Embodiment 3
By containing 100mg QD's and the degree of polymerization be 40 polyethyleneglycol modified quantum dot, 20mg particle diameters be 1 micron
Silicon dioxide microsphere is mixed with 500mg photoresist mother liquors, and photoresist mother liquor includes adhesive, photoresist monomer, light or heat and drawn
Send out agent, can dissolve the solvent and active additive of photoresist, silicon dioxide microsphere surface modification has polyethylene glycol segment and propylene
Base；After well mixed, hybrid mode is by way of ultrasound or stirring, and the mode of stirring includes mechanical agitation, magnetic agitation etc.；
Rotary evaporation of solvent, obtains dispersed quantum dot light photoresist.Quantum dot light photoresist is coated to the glass with black matrix"
On glass substrate, photoetching is carried out by illumination or heating, color sub-pixel is formed, then set gradually protective layer and ITO conducting films,
Form quantum stippling ilm substrate.
Although inventor has done more detailed elaboration and enumerated to technical scheme, it will be appreciated that for
For those skilled in the art, above-described embodiment is modified and/or the flexible or equivalent alternative solution of use is obvious
, can not all depart from the essence of spirit of the present invention, the term occurred in the present invention be used for elaboration to technical solution of the present invention and
Understand, can not be construed as limiting the invention.
Claims (16)
1. a kind of quantum dot light photoresist, including photoresist mother liquor and the quantum dot being dispersed in the photoresist mother liquor, institute
Stating photoresist mother liquor includes adhesive, photoresist monomer, light or thermal initiator, the solvent of dissolvable photoresist and activity addition
Agent, it is characterised in that the surface ligand of the quantum dot includes the polymerizable groups that can be copolymerized with the photoresist monomer,
The quantum dot light photoresist is after illumination or heating, and the surface ligand of the quantum dot occurs altogether with the photoresist monomer
It is poly-.
2. quantum dot light photoresist according to claim 1, it is characterised in that：The mass percent of the quantum dot is 5%
~50%, the mass percent of described adhesive is 5%~30%, and the mass percent of the monomer is 2%~18%, described
The mass percent of light trigger is 0.5%~6%, the mass percent of the solvent of the dissolvable photoresist for 20%~
70%, the mass percent of the active additive is 1%~5%.
3. quantum dot light photoresist according to claim 1 or 2, it is characterised in that：The quantum dot light photoresist also includes equal
The even filter being dispersed in the photoresist mother liquor, the filter is used for the light for absorbing non-excitation quantum point material
Line.
4. quantum dot light photoresist according to claim 3, it is characterised in that：The filter is in the quantum dot photoetching
Mass fraction scope in glue is 0.1%-5%.
5. quantum dot light photoresist according to claim 1, it is characterised in that：The polymerizable groups include double bond, substitution
Or the acrylic not replaced.
6. quantum dot light photoresist according to claim 1, it is characterised in that：The terminal groups of the surface ligand of the quantum dot
Group is the photoresist monomer.
7. quantum dot light photoresist according to claim 1, it is characterised in that：The surface ligand of the quanta point material is also wrapped
Include molecular weight within 1000 and can be with the uniform miscible crosslinked group of the photoresist mother liquor.
8. quantum dot light photoresist according to claim 7, it is characterised in that：The crosslinked group includes having lewis base
The polymer segment of function.
9. quantum dot light photoresist according to claim 7, it is characterised in that：The crosslinked group include it is substituted or not by
Substituted polyethylene glycol segment, substitution or unsubstituted poly- silica segment.
10. quantum dot light photoresist according to claim 1, it is characterised in that：The quantum dot light photoresist also includes uniform
It is dispersed in the light diffusing agent in the photoresist mother liquor.
11. quantum dot light photoresist according to claim 10, it is characterised in that：The light diffusing agent is to be modified with surface
The inorganic nanoparticles of group, the surface-modifying groups and the surface ligand of the quantum dot are crosslinked miscible, the quantum dot
Absorption is on the light diffusing agent surface.
12. quantum dot light photoresist according to claim 10, it is characterised in that：The quantum dot light photoresist through illumination or
After heating, the surface-modifying groups of the inorganic nanoparticles and polymerizable groups, the photoresist monomer of the quantum dot
It is copolymerized.
13. quantum dot light photoresist according to claim 1, it is characterised in that：The quantum dot is core shell structure, the core
Including CdSe, CdS, CdTe, ZnTe, ZnSe, ZnS, InP, InAs, GaN, GaP, InZnP, InGaP, InGaZnP, GaAs,
At least one of CdZnSe, CdZnSeS, CdZnS, CdZnTe, InZnAs, the shell include ZnS, ZnSe, ZnSeS, CdS,
At least one of CdSe, CdSeS, ZnTe, CdTe, CdZnTe.
14. a kind of quantum dot color membrane substrates, including underlay substrate and the multiple pixels being distributed on the underlay substrate, each picture
Element includes the color sub-pixel of some different colours, it is characterised in that at least one described color sub-pixel uses claim
Any described quantum dot light photoresist is made in 1-13.
15. quantum dot color membrane substrates according to claim 1, it is characterised in that：The color sub-pixel includes red son
Pixel, green sub-pixels and blue subpixels, the red sub-pixel include red light quantum point material, the green sub-pixels bag
Include green light quantum point material；The blue subpixels include blue light quantum point material or transparent material.
16. a kind of display device, it is characterised in that including any described quantum stippling in backlight and claim 14-15
Ilm substrate, the wavelength of light that the backlight is sent, which is less than after the quanta point material in the quantum dot color membrane substrates is excited, to be sent out
The wavelength of light gone out.
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| CN201710319686.4A CN107102514B (en) | 2017-05-08 | 2017-05-08 | Quantum dot photoresist, quantum dot color film substrate and display device |
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| CN108365133A (en) * | 2018-02-07 | 2018-08-03 | 上海瀚莅电子科技有限公司 | The preparation method of OLED display modules |
| CN109239829A (en) * | 2018-12-03 | 2019-01-18 | 嘉兴纳鼎光电科技有限公司 | A kind of production method of quantum dot color filter |
| CN109739069A (en) * | 2018-12-29 | 2019-05-10 | 阜阳欣奕华材料科技有限公司 | Photo-curing material composition, color membrane substrates, display panel and display device |
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| CN108365133A (en) * | 2018-02-07 | 2018-08-03 | 上海瀚莅电子科技有限公司 | The preparation method of OLED display modules |
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| CN109239829A (en) * | 2018-12-03 | 2019-01-18 | 嘉兴纳鼎光电科技有限公司 | A kind of production method of quantum dot color filter |
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| CN112051709A (en) * | 2019-06-05 | 2020-12-08 | 北京师范大学 | Quantum dot photoresist, quantum dot light-emitting layer obtained from quantum dot photoresist, QLED comprising quantum dot light-emitting layer, and preparation and application of QLED |
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| CN110164947A (en) * | 2019-06-12 | 2019-08-23 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display panel |
| CN110564404A (en) * | 2019-08-30 | 2019-12-13 | 苏州星烁纳米科技有限公司 | Preparation method of quantum dot, quantum dot composition and color film |
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| CN113064324B (en) * | 2020-01-02 | 2023-04-07 | 京东方科技集团股份有限公司 | Silicon quantum dot photoresist, color film layer, OLED display structure and display |
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| CN111863917B (en) * | 2020-07-29 | 2022-11-01 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display panel |
| WO2023050214A1 (en) * | 2021-09-29 | 2023-04-06 | 京东方科技集团股份有限公司 | Quantum dot ligand, quantum dot-ligand system, and quantum dot material |
| CN114058269B (en) * | 2021-11-29 | 2023-09-01 | 镭昱光电科技(苏州)有限公司 | Quantum dot photo-curing glue, preparation method thereof and display device |
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