CN113097242A - High-resolution micro-display structure and preparation method thereof - Google Patents
High-resolution micro-display structure and preparation method thereof Download PDFInfo
- Publication number
- CN113097242A CN113097242A CN202110338361.7A CN202110338361A CN113097242A CN 113097242 A CN113097242 A CN 113097242A CN 202110338361 A CN202110338361 A CN 202110338361A CN 113097242 A CN113097242 A CN 113097242A
- Authority
- CN
- China
- Prior art keywords
- layer
- quantum
- green
- red
- quantum dot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 238000004806 packaging method and process Methods 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 269
- 239000002096 quantum dot Substances 0.000 claims description 59
- 230000004888 barrier function Effects 0.000 claims description 42
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- 239000011241 protective layer Substances 0.000 claims description 19
- 229910010272 inorganic material Inorganic materials 0.000 claims description 18
- 239000011147 inorganic material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 238000005538 encapsulation Methods 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 238000004380 ashing Methods 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Abstract
A high resolution micro display structure and its preparation method belongs to the micro display technology field, wherein the high resolution micro display structure comprises a driving circuit layer, a pixel definition layer, a blue light emitting layer, a cathode film layer, a packaging layer, a filter layer and a transparent protection layer which are arranged from inside to outside in sequence, the filter layer comprises a red light quantum layer and a green light quantum layer, the transparent protection layer is arranged on the packaging layer at the position corresponding to the blue light emitting layer, and the transparent protection layer covers the surfaces of the red light quantum layer and the green light quantum layer.
Description
Technical Field
The invention relates to the technical field of micro display, in particular to a high-resolution micro display structure and a preparation method thereof.
Background
In a high-resolution microdisplay, as the pixel size is reduced, the Filter CF and the Color Filter size are required to be smaller, for example, 5000PPI requires that the line width of the CF is less than or equal to 2 um. The CF material is generally negative glue, the resolution ratio is difficult to be less than or equal to 2um, particularly low-temperature CF commonly used for micro display is poor in resolving power, and the requirement of high resolution line width cannot be met. In addition, as the line width of the CF becomes smaller, the color photoresist becomes less stable and is easily degraded during use, resulting in poor color gamut. Therefore, it is necessary to develop a colorization technique that can meet the high resolution requirements of microdisplays.
Disclosure of Invention
In order to solve the technical problems, the invention provides a high-resolution micro-display structure and a preparation method thereof.
In order to achieve the purpose, the technical scheme adopted by the invention for solving the technical problems is as follows: the high-resolution micro-display structure comprises a driving circuit layer, a pixel definition layer, a blue light emitting layer, a cathode film layer, a packaging layer, a filter layer and a transparent protection layer which are sequentially arranged from inside to outside, wherein the filter layer comprises a red light quantum layer and a green light quantum layer, the transparent protection layer is arranged at a position on the packaging layer opposite to the blue light emitting layer, and the surfaces of the red light quantum layer and the green light quantum layer are covered with the transparent protection layer.
Further, the driving circuit layer comprises a substrate and a plurality of anodes arranged on the substrate, the pixel defining layer is arranged between every two adjacent anodes, and the blue light emitting layer, the cathode film layer and the packaging layer are sequentially covered on the pixel defining layer and the anodes.
Further, the red quantum layer and the green quantum layer are closely connected and respectively disposed on the surfaces of the encapsulation layers opposite to the two adjacent anodes.
Furthermore, the red light quantum layer comprises a red light quantum dot layer and a blocking layer I covered on the upper surface of the red light quantum dot layer, the green light quantum layer comprises a green light quantum dot layer and a blocking layer II covered on the upper surface of the green light quantum dot layer, and one end of the green light quantum dot layer is lapped on one end of the red light quantum layer.
Further, the barrier layer I and the barrier layer II are both prepared from transparent inorganic materials, the transparent protective layer is prepared from transparent photoresist or transparent inorganic materials, and the transparent inorganic materials comprise silicon oxide, silicon nitride, indium tin oxide, indium gallium zinc oxide or indium zinc oxide.
Furthermore, the transparent protection layer is arranged on one side of the red light quantum layer or the green light quantum layer to form a blue light transmission layer.
A preparation process of a high-resolution micro-display structure comprises the following steps:
1) preparing an anode on a substrate to form a driving circuit layer;
2) preparing a pixel defining layer between two adjacent anodes;
3) sequentially evaporating a blue light emitting layer and a cathode film layer on the pixel defining layer and the surface of the anode, and depositing a packaging layer on the surface of the cathode film layer;
4) coating a red quantum dot layer on the surface of the packaging layer, and depositing a transparent inorganic material on the surface of the red quantum dot layer to form a barrier layer I;
5) photoetching, dry etching and subsequent processing are carried out on the surfaces of the barrier layer I and the red quantum dot layer opposite to the anode to obtain a red light quantum layer;
6) coating a green quantum dot layer on the surfaces of the red quantum layer and the packaging layer, and depositing a transparent inorganic material on the surface of the green quantum dot layer to form a barrier layer II;
7) photoetching, dry etching and subsequent processing are carried out on the surfaces of the green quantum dot layer and the barrier layer II, which are arranged on one side of the red quantum layer and are opposite to the adjacent anode, so as to obtain a green quantum layer;
8) and preparing transparent protective layers on the surfaces of the red light quantum layer, the green light quantum layer and the packaging layer.
Further, the method for preparing the red quantum layer in step 5) and the green quantum layer in step 7) is the same, and includes:
1) coating photoresist on the surface of the barrier layer I or the barrier layer II, and exposing, developing and patterning the barrier layer I and the red quantum dot layer or the barrier layer II and the green quantum dot layer, and then reserving a region covered by the photoresist;
2) and etching the barrier layer I or the barrier layer II, performing dry etching on the red quantum dot layer or the green quantum dot layer, and removing the photoresist through a dry ashing process to obtain the red quantum layer or the green quantum layer.
Further, the method for preparing the transparent protective layer in the step 8) is as follows: and coating transparent photoresist or depositing transparent inorganic materials on the surfaces of the red light quantum layer, the green light quantum layer and the packaging layer to form the transparent protective layer.
The invention has the beneficial effects that:
1. the blue light emitting layer is covered on the pixel defining layer and the driving circuit layer, the transparent protective layer is arranged at the position, opposite to the blue light emitting layer, on the packaging layer, the blue pixel of the blue light emitting layer does not need color conversion, the brightness is higher, the red light quantum layer and the green light quantum layer are also arranged on the packaging layer, the red light quantum layer and the green light quantum layer can respectively convert the blue pixel of the blue light emitting layer into red light and green light, and the quantum dot micro display is photoluminescence, so that the light conversion rate is higher, the half peak width of a quantum dot is narrower, and the color gamut is higher.
2. The red quantum dot layer and the green quantum dot layer are patterned by adopting the photoetching and dry etching processes, compared with the traditional CF process, the negative glue CF is avoided, the resolution ratio is higher, compared with the ink-jet printing quantum dot, the photoetching and dry etching processes can also realize better line width and meet the line width requirement of less than or equal to 1um, so that the problems that the resolution ratio of the traditional CF process is poor, the ultrahigh resolution ratio requirement is not met, and the stability is poor after the line width of the CF is reduced are solved, and meanwhile, the problems that the resolution ratio of the ink-jet printing quantum dot is poor and the requirement of an ultrahigh resolution ratio micro-display is not met are solved.
In conclusion, the quantum dots are used for replacing the color photoresist, and the photoetching and dry etching processes are used for patterning the quantum dots, so that the colorization of the micro-display with high color gamut, high brightness and high precision can be realized, and the requirement of the micro-display with high resolution can be met.
Drawings
The contents of the expressions in the various figures of the present specification and the labels in the figures are briefly described as follows:
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a flow chart of the manufacturing process of the present invention;
the labels in the above figures are: 1. the LED comprises a driving circuit layer, 11 a substrate, 12 an anode, 2 a pixel definition layer, 3 a blue light emitting layer, 4 a cathode film layer, 5 an encapsulation layer, 6 a filter layer, 61 a red light quantum layer, 611 a red quantum dot layer, 612 a barrier layer I, 62 a green light quantum layer, 621 a green quantum dot layer, 622 a barrier layer II, 7 a transparent protection layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and the following embodiments are used for illustrating the present invention and are not intended to limit the scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The specific implementation scheme of the invention is as follows: as shown in fig. 1, a high-resolution microdisplay structure includes a driving circuit layer 1, a pixel defining layer 2, a blue light emitting layer 3, a cathode film layer 4, an encapsulating layer 5, a filter layer 6 and a transparent protective layer 7, which are sequentially arranged from inside to outside, wherein the filter layer 6 includes a red light quantum layer 61 and a green light quantum layer 62, the surfaces of the red light quantum layer 61 and the green light quantum layer 62 are covered with the transparent protective layer 7, and the transparent protective layer 7 is arranged at a position on the encapsulating layer 5 opposite to the blue light emitting layer 3. Blue pixel of blue light luminescent layer 3 wherein directly sees through transparent protective layer 7, need not color conversion, and luminance is higher, and red light quantum layer 61 and green light quantum layer 62 can convert blue pixel of blue light luminescent layer 3 into red light and green light respectively, because quantum dot micro display is photoluminescence, the light conversion rate is higher, and the half peak width of quantum dot is narrower moreover, and the colour gamut is higher.
Specifically, the driving circuit layer 1 includes a substrate 11 and a plurality of anodes 12 disposed thereon, a pixel defining layer 2 is disposed between two adjacent anodes 12, the blue light emitting layer 3, a cathode film layer 4 and an encapsulation layer 5 are sequentially covered on the pixel defining layer 2 and the anodes 12, the blue light emitting layer 3 connects the anodes 12 and the cathode film layer 4, so that electrons and holes migrate in the blue light emitting layer 3 to be recombined, and the blue light emitting layer 3 emits light.
Specifically, the red quantum layer 61 and the green quantum layer 62 are connected closely and respectively arranged on the surface of the packaging layer 5 opposite to two adjacent anodes 12, wherein the red quantum layer 61 comprises a red quantum dot layer 611 and a barrier layer I612 covered on the upper surface, the green quantum layer 62 comprises a green quantum dot layer 621 and a barrier layer II 622 covered on the upper surface, one end of the green quantum dot layer 621 is lapped on one end of the red quantum layer 61, so that the blue light emitted by the blue light emitting layer 3 can be effectively converted into red light and green light through the red quantum dot layer 611 and the green quantum dot layer 621, wherein the barrier layer I612 and the barrier layer II 622 are both made of transparent inorganic materials, the color conversion of the light is not influenced, the effect of protecting the quantum dot layer is achieved, the problem of damaging the quantum dot layer when the photoresist is removed by a subsequent dry ashing is avoided, the transparent protective layer 7 is made of transparent photoresist or transparent inorganic materials, the transparent inorganic material comprises silicon oxide, silicon nitride, indium tin oxide, indium gallium zinc oxide or indium zinc oxide, and the transparent protective layer 7 plays a role in preventing dust and discharging water.
As shown in fig. 2, the preparation process of the high-resolution microdisplay structure includes the following steps:
1) an anode 12 is prepared on a substrate 11 to form a driving circuit layer 1.
2) The pixel defining layer 2 is prepared between adjacent two anodes 12.
3) And sequentially evaporating a blue light emitting layer 3 and a cathode film layer 4 on the surfaces of the pixel defining layer 2 and the anode 12, and depositing an encapsulation layer 5 on the surface of the cathode film layer 4.
4) A red quantum dot layer 611 is coated on the surface of the encapsulation layer 5, and a transparent inorganic material is deposited on the surface of the red quantum dot layer 611 to form a barrier layer i 612.
5) Carrying out photoetching, dry etching and subsequent processing on the surfaces of the barrier layer I612 and the red quantum dot layer 611 opposite to the anode 12 to obtain a red quantum layer 61, specifically, firstly, coating photoresist on the surface of the barrier layer I612, and carrying out exposure, development and patterning on the barrier layer I612 and the red quantum dot layer 611, and then reserving a region covered by the photoresist; then, the barrier layer i 612 is etched, the red quantum dot layer 611 is dry etched, and the photoresist is removed by a dry ashing process to obtain the red quantum layer 61.
6) And coating a green quantum dot layer 621 on the surfaces of the red quantum layer 61 and the packaging layer 5, and depositing a transparent inorganic material on the surface of the green quantum dot layer 621 to form a barrier layer II 622.
7) Carrying out photoetching, dry etching and subsequent processing on the surfaces of the green quantum dot layer 621 and the barrier layer II 622 on one side of the red quantum layer 61 and opposite to the adjacent anode 12 to obtain a green quantum layer 62, specifically, firstly, coating photoresist on the surface of the barrier layer II 622, and carrying out exposure, development and patterning on the barrier layer II 622 and the green quantum dot layer 621, and then reserving a region covered by the photoresist; then, the barrier layer ii 622 is etched, the green quantum dot layer 621 is dry etched, and the photoresist is removed by a dry ashing process to obtain the green quantum layer 62.
8) Transparent protective layer 7 is formed by coating transparent photoresist or depositing transparent inorganic material on the surfaces of red quantum layer 61, green quantum layer 62 and encapsulation layer 5.
In conclusion, the quantum dots are used for replacing the color photoresist, and the photoetching and dry etching processes are used for patterning the quantum dots, so that the colorization of the micro-display with high color gamut, high brightness and high precision can be realized, and the requirement of the micro-display with high resolution can be met.
While the foregoing is directed to the principles of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (8)
1. The utility model provides a high resolution microdisplay structure, its characterized in that includes drive circuit layer (1), pixel definition layer (2), blue light luminescent layer (3), cathode film layer (4), packaging layer (5), filter layer (6) and transparent protective layer (7) that from interior to exterior set gradually, filter layer (6) include ruddiness quantum layer (61) and green light quantum layer (62), on packaging layer (5) with the position relative in blue light luminescent layer (3) sets up transparent protective layer (7), the surface cover of ruddiness quantum layer (61) and green light quantum layer (62) transparent protective layer (7).
2. A high resolution microdisplay architecture according to claim 1 in which: the driving circuit layer (1) comprises a substrate (11) and a plurality of anodes (12) arranged on the substrate, the pixel defining layer (2) is arranged between every two adjacent anodes (12), and the blue light emitting layer (3), the cathode film layer (4) and the packaging layer (5) are sequentially covered on the pixel defining layer (2) and the anodes (12).
3. A high resolution microdisplay architecture according to claim 1 in which: the red quantum layers (61) and the green quantum layers (62) are connected next to each other and are arranged on the surfaces of the encapsulation layers (5) opposite to the two adjacent anodes (12).
4. A high resolution microdisplay architecture according to claim 3 in which: the red quantum layer (61) comprises a red quantum dot layer (611) and a barrier layer I (612) covered on the upper surface, the green quantum layer (62) comprises a green quantum dot layer (621) and a barrier layer II (622) covered on the upper surface, and one end of the green quantum dot layer (621) is lapped on one end of the red quantum layer (61).
5. A high resolution microdisplay architecture according to claim 4 in which: the barrier layer I (612) and the barrier layer II (622) are both prepared from transparent inorganic materials, the transparent protective layer (7) is prepared from transparent photoresist or transparent inorganic materials, and the transparent inorganic materials comprise silicon oxide, silicon nitride, indium tin oxide, indium gallium zinc oxide or indium zinc oxide.
6. A preparation process of a high resolution microdisplay structure according to any one of claims 1-5, characterized in that: the method comprises the following steps:
1) preparing an anode (12) on a substrate (11) to form a driving circuit layer (1);
2) preparing a pixel defining layer (2) between two adjacent anodes (12);
3) sequentially evaporating a blue light emitting layer (3) and a cathode film layer (4) on the surfaces of the pixel defining layer (2) and the anode (12), and depositing a packaging layer (5) on the surface of the cathode film layer (4);
4) coating a red quantum dot layer (611) on the surface of the packaging layer (5), and depositing a transparent inorganic material on the surface of the red quantum dot layer (611) to form a barrier layer I (612);
5) photoetching, dry etching and subsequent processing are carried out on the surfaces of the barrier layer I (612) and the red quantum dot layer (611) opposite to the anode (12) to obtain a red quantum layer (61);
6) coating a green quantum dot layer (621) on the surfaces of the red quantum layer (61) and the packaging layer (5), and depositing a transparent inorganic material on the surface of the green quantum dot layer (621) to form a barrier layer II (622);
7) photoetching, dry etching and subsequent processing are carried out on the surfaces of the green quantum dot layer (621) and the barrier layer II (622) which are arranged on one side of the red quantum layer (61) and are opposite to the adjacent anode (12) to obtain a green quantum layer (62);
8) and preparing a transparent protective layer (7) on the surfaces of the red light quantum layer (61), the green light quantum layer (62) and the packaging layer (5).
7. A method of fabricating a high resolution microdisplay structure according to claim 6 in which: the method for preparing the red quantum layer (61) in the step 5) and the method for preparing the green quantum layer (62) in the step 7) are the same, and the method comprises the following steps:
1) coating photoresist on the surface of the barrier layer I (612) or the barrier layer II (622), and exposing, developing and patterning the barrier layer I (612) and the red quantum dot layer (611) or the barrier layer II (622) and the green quantum dot layer (621) to reserve a region covered by the photoresist;
2) and etching the barrier layer I (612) or the barrier layer II (622), performing dry etching on the red quantum dot layer (611) or the green quantum dot layer (621), and removing the photoresist through a dry ashing process to obtain the red quantum layer (61) or the green quantum layer (62).
8. A method of fabricating a high resolution microdisplay structure according to claim 6 in which: the method for preparing the transparent protective layer (7) in the step 8) comprises the following steps: and coating transparent photoresist or depositing transparent inorganic materials on the surfaces of the red light quantum layer (61), the green light quantum layer (62) and the packaging layer (5) to form the transparent protective layer (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110338361.7A CN113097242A (en) | 2021-03-25 | 2021-03-25 | High-resolution micro-display structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110338361.7A CN113097242A (en) | 2021-03-25 | 2021-03-25 | High-resolution micro-display structure and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113097242A true CN113097242A (en) | 2021-07-09 |
Family
ID=76670878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110338361.7A Pending CN113097242A (en) | 2021-03-25 | 2021-03-25 | High-resolution micro-display structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113097242A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113990999A (en) * | 2021-11-01 | 2022-01-28 | 镭昱光电科技(苏州)有限公司 | Micro display and manufacturing method thereof |
| CN113990998A (en) * | 2021-11-01 | 2022-01-28 | 镭昱光电科技(苏州)有限公司 | Wavelength conversion matrix and manufacturing method thereof |
| CN114361375A (en) * | 2022-01-06 | 2022-04-15 | 上海大学 | Preparation method of low-temperature color filter membrane display panel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104835783A (en) * | 2015-05-12 | 2015-08-12 | 中山大学 | Quantum dot film array preparation method |
| US20150228232A1 (en) * | 2014-02-11 | 2015-08-13 | Samsung Display Co., Ltd. | Display apparatus and method for driving the same |
| CN105355726A (en) * | 2015-10-08 | 2016-02-24 | 深圳市华星光电技术有限公司 | Patterning method of quantum dot layer and preparation method of quantum dot color film |
| CN109545832A (en) * | 2018-11-29 | 2019-03-29 | 京东方科技集团股份有限公司 | Organic light-emitting diode display substrate and preparation method thereof, display device |
-
2021
- 2021-03-25 CN CN202110338361.7A patent/CN113097242A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150228232A1 (en) * | 2014-02-11 | 2015-08-13 | Samsung Display Co., Ltd. | Display apparatus and method for driving the same |
| CN104835783A (en) * | 2015-05-12 | 2015-08-12 | 中山大学 | Quantum dot film array preparation method |
| CN105355726A (en) * | 2015-10-08 | 2016-02-24 | 深圳市华星光电技术有限公司 | Patterning method of quantum dot layer and preparation method of quantum dot color film |
| CN109545832A (en) * | 2018-11-29 | 2019-03-29 | 京东方科技集团股份有限公司 | Organic light-emitting diode display substrate and preparation method thereof, display device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113990999A (en) * | 2021-11-01 | 2022-01-28 | 镭昱光电科技(苏州)有限公司 | Micro display and manufacturing method thereof |
| CN113990998A (en) * | 2021-11-01 | 2022-01-28 | 镭昱光电科技(苏州)有限公司 | Wavelength conversion matrix and manufacturing method thereof |
| CN114361375A (en) * | 2022-01-06 | 2022-04-15 | 上海大学 | Preparation method of low-temperature color filter membrane display panel |
| CN114361375B (en) * | 2022-01-06 | 2023-10-13 | 上海大学 | Preparation method of low-temperature color filter membrane display panel |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7394758B2 (en) | Organic EL element and method for manufacturing organic EL element | |
| CN113097242A (en) | High-resolution micro-display structure and preparation method thereof | |
| CN110610975B (en) | Display substrate, preparation method thereof and display device | |
| KR102093628B1 (en) | Organic electro luminescent device and method of fabricating the same | |
| JP3861400B2 (en) | Electroluminescent device and manufacturing method thereof | |
| KR101361861B1 (en) | Organic light emitting diodes and method of manufacturing the same | |
| US11081680B2 (en) | Pixel structure, method for forming the same, and display screen | |
| US11915962B2 (en) | High-resolution micro-LED display panel and manufacturing method of the same | |
| US20210336100A1 (en) | Display device and manufacturing method of display device | |
| WO2020233284A1 (en) | Display panel and preparation method therefor, and display device | |
| US11296257B2 (en) | Light-emitting diode chip and preparation method therefor | |
| JP3994482B2 (en) | Multi-color organic electroluminescence device and manufacturing method thereof | |
| CN109671365A (en) | Micro-LED display base plate and preparation method thereof, display device | |
| CN109860438B (en) | Display substrate, preparation method thereof and display device | |
| WO2020001061A1 (en) | Display substrate and manufacturing method therefor, and display device | |
| CN113725249B (en) | Chip structure, manufacturing method and display device | |
| WO2023071911A1 (en) | Wavelength conversion matrix and manufacturing method therefor | |
| WO2023071914A1 (en) | Microdisplay device and manufacturing method therefor | |
| WO2020206773A1 (en) | Organic light emitting diode device and manufacturing method therefor | |
| CN112750886A (en) | Micro-display structure for improving crosstalk based on BM (broadcast multicast service) technology and preparation method thereof | |
| CN209929349U (en) | Display panel | |
| CN209929308U (en) | Display panel | |
| JP2003017263A (en) | El display, its manufacturing method, color filter and its manufacturing method | |
| CN115775857A (en) | High PPI Micro LED device and manufacturing method thereof | |
| US20210288272A1 (en) | Organic light emitting display screen and manufacturing method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210709 |
|
| RJ01 | Rejection of invention patent application after publication |